JP2008533447A5 - - Google Patents

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Publication number
JP2008533447A5
JP2008533447A5 JP2007557085A JP2007557085A JP2008533447A5 JP 2008533447 A5 JP2008533447 A5 JP 2008533447A5 JP 2007557085 A JP2007557085 A JP 2007557085A JP 2007557085 A JP2007557085 A JP 2007557085A JP 2008533447 A5 JP2008533447 A5 JP 2008533447A5
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JP
Japan
Prior art keywords
frequency
polarized beam
heterodyne
target layer
phase shift
Prior art date
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Granted
Application number
JP2007557085A
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English (en)
Japanese (ja)
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JP4819065B2 (ja
JP2008533447A (ja
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Publication date
Priority claimed from US11/066,933 external-priority patent/US7339682B2/en
Priority claimed from US11/178,856 external-priority patent/US20060285120A1/en
Application filed filed Critical
Publication of JP2008533447A publication Critical patent/JP2008533447A/ja
Publication of JP2008533447A5 publication Critical patent/JP2008533447A5/ja
Application granted granted Critical
Publication of JP4819065B2 publication Critical patent/JP4819065B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2007557085A 2005-02-25 2006-02-21 膜厚モニタ用のヘテロダイン反射率計及びその実施方法 Expired - Fee Related JP4819065B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US11/066,933 US7339682B2 (en) 2005-02-25 2005-02-25 Heterodyne reflectometer for film thickness monitoring and method for implementing
US11/066,933 2005-02-25
US11/178,856 2005-07-10
US11/178,856 US20060285120A1 (en) 2005-02-25 2005-07-10 Method for monitoring film thickness using heterodyne reflectometry and grating interferometry
PCT/US2006/005937 WO2006093709A2 (en) 2005-02-25 2006-02-21 Heterodyne reflectometer for film thickness monitoring and method for implementing

Publications (3)

Publication Number Publication Date
JP2008533447A JP2008533447A (ja) 2008-08-21
JP2008533447A5 true JP2008533447A5 (enExample) 2009-04-09
JP4819065B2 JP4819065B2 (ja) 2011-11-16

Family

ID=36941619

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007557085A Expired - Fee Related JP4819065B2 (ja) 2005-02-25 2006-02-21 膜厚モニタ用のヘテロダイン反射率計及びその実施方法

Country Status (5)

Country Link
US (1) US20060285120A1 (enExample)
JP (1) JP4819065B2 (enExample)
KR (1) KR20070110390A (enExample)
TW (1) TWI285257B (enExample)
WO (1) WO2006093709A2 (enExample)

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US7781349B2 (en) * 2005-09-12 2010-08-24 Imec Method and system for optimizing a BARC stack
US20070059849A1 (en) * 2005-09-12 2007-03-15 Interuniversitair Microelktronica Centrum (Imec) Method and system for BARC optimization for high numerical aperture applications
US7589843B2 (en) * 2005-09-27 2009-09-15 Verity Instruments, Inc. Self referencing heterodyne reflectometer and method for implementing
US7823440B2 (en) * 2007-08-16 2010-11-02 Micron Technology, Inc. Systems and methods for characterizing thickness and topography of microelectronic workpiece layers
US20100122456A1 (en) * 2008-11-17 2010-05-20 Chen-Hua Yu Integrated Alignment and Bonding System
KR101126382B1 (ko) * 2010-05-10 2012-03-28 주식회사 케이씨텍 화학 기계식 연마시스템의 컨디셔너
US8908161B2 (en) * 2011-08-25 2014-12-09 Palo Alto Research Center Incorporated Removing aluminum nitride sections
CN103890539B (zh) * 2011-10-26 2016-05-25 三菱电机株式会社 膜厚测定方法
JP6079697B2 (ja) * 2013-07-11 2017-02-15 株式会社村田製作所 電子部品の厚さ測定方法、これを用いる電子部品連の製造方法、これによって製造された電子部品連、および、電子部品の検査装置
KR102292209B1 (ko) 2014-07-28 2021-08-25 삼성전자주식회사 반도체 계측 시스템 및 이를 이용한 반도체 소자의 계측 방법
WO2017211545A1 (en) * 2016-06-09 2017-12-14 Asml Netherlands B.V. Metrology apparatus
JP6800800B2 (ja) * 2017-04-06 2020-12-16 株式会社ニューフレアテクノロジー 成長速度測定装置および成長速度検出方法
JP6285597B1 (ja) * 2017-06-05 2018-02-28 大塚電子株式会社 光学測定装置および光学測定方法
JP6919458B2 (ja) * 2017-09-26 2021-08-18 オムロン株式会社 変位計測装置、計測システム、および変位計測方法
TWI794416B (zh) 2018-02-28 2023-03-01 美商賽格股份有限公司 多層堆疊結構之計量方法及干涉儀系統
DE102019104260B4 (de) * 2019-02-20 2025-09-11 Stefan Böttger Photothermisches Verfahren und Vorrichtung zur Bestimmung einer Schichtdicke einer auf ein Substrat aufgebrachten Schicht
CN110715931B (zh) * 2019-10-29 2022-04-12 上海御微半导体技术有限公司 一种透明样品缺陷自动检测方法和检测装置
KR20220101070A (ko) 2019-11-26 2022-07-19 하마마츠 포토닉스 가부시키가이샤 광학 유닛 및 막두께 계측 장치
WO2022204560A1 (en) 2021-03-26 2022-09-29 Aiyer Arun Anath Optical sensor for surface inspection and metrology
CN114894712B (zh) * 2022-03-25 2023-08-25 业成科技（成都）有限公司 光学量测设备及其校正方法
CN115451839A (zh) * 2022-08-25 2022-12-09 中钞印制技术研究院有限公司 安全产品表面涂层厚度的检测方法
TWI812482B (zh) * 2022-09-23 2023-08-11 中國鋼鐵股份有限公司 旋轉機械系統與平衡方法

Family Cites Families (13)

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Publication number Priority date Publication date Assignee Title
US4688940A (en) * 1985-03-12 1987-08-25 Zygo Corporation Heterodyne interferometer system
JPS63128211A (ja) * 1986-11-19 1988-05-31 Hitachi Ltd スペ−シング測定方法
JPH0221203A (ja) * 1988-07-09 1990-01-24 Brother Ind Ltd 位相差検出装置
JP3042225B2 (ja) * 1992-10-30 2000-05-15 キヤノン株式会社 表面状態検査方法及びそれを用いた表面状態検査装置
US5450205A (en) * 1993-05-28 1995-09-12 Massachusetts Institute Of Technology Apparatus and method for real-time measurement of thin film layer thickness and changes thereof
US5548401A (en) * 1993-08-23 1996-08-20 Nippon Telegraph And Telephone Public Corporation Photomask inspecting method and apparatus
FR2716531B1 (fr) * 1994-02-18 1996-05-03 Saint Gobain Cinematique Contr Procédé de mesure d'épaisseur d'un matériau transparent.
CN1131741A (zh) * 1995-03-22 1996-09-25 载歌公司 光学间隙测量装置和方法
US6172752B1 (en) * 1996-08-04 2001-01-09 Matsushita Electric Industrial Co., Ltd. Method and apparatus for simultaneously interferometrically measuring optical characteristics in a noncontact manner
FR2780778B3 (fr) * 1998-07-03 2000-08-11 Saint Gobain Vitrage Procede et dispositif pour la mesure de l'epaisseur d'un materiau transparent
US6261152B1 (en) * 1998-07-16 2001-07-17 Nikon Research Corporation Of America Heterdoyne Thickness Monitoring System
US6710881B1 (en) * 1999-09-28 2004-03-23 Nanyang Technological University Heterodyne interferometry for small spacing measurement
US7339682B2 (en) * 2005-02-25 2008-03-04 Verity Instruments, Inc. Heterodyne reflectometer for film thickness monitoring and method for implementing

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