JP2008508725A5 - - Google Patents

Download PDF

Info

Publication number
JP2008508725A5
JP2008508725A5 JP2007523700A JP2007523700A JP2008508725A5 JP 2008508725 A5 JP2008508725 A5 JP 2008508725A5 JP 2007523700 A JP2007523700 A JP 2007523700A JP 2007523700 A JP2007523700 A JP 2007523700A JP 2008508725 A5 JP2008508725 A5 JP 2008508725A5
Authority
JP
Japan
Prior art keywords
source
drain
sic
channel
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007523700A
Other languages
English (en)
Japanese (ja)
Other versions
JP5207029B2 (ja
JP2008508725A (ja
Filing date
Publication date
Priority claimed from US10/902,297 external-priority patent/US7598134B2/en
Application filed filed Critical
Publication of JP2008508725A publication Critical patent/JP2008508725A/ja
Publication of JP2008508725A5 publication Critical patent/JP2008508725A5/ja
Application granted granted Critical
Publication of JP5207029B2 publication Critical patent/JP5207029B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP2007523700A 2004-07-28 2005-07-25 トランジスタ、及び該トランジスタを有するメモリデバイス Expired - Lifetime JP5207029B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/902,297 US7598134B2 (en) 2004-07-28 2004-07-28 Memory device forming methods
US10/902,297 2004-07-28
PCT/US2005/026365 WO2006012626A2 (en) 2004-07-28 2005-07-25 Memory devices, transistors, memory cells, and methods of making same

Publications (3)

Publication Number Publication Date
JP2008508725A JP2008508725A (ja) 2008-03-21
JP2008508725A5 true JP2008508725A5 (enExample) 2011-09-08
JP5207029B2 JP5207029B2 (ja) 2013-06-12

Family

ID=35500865

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007523700A Expired - Lifetime JP5207029B2 (ja) 2004-07-28 2005-07-25 トランジスタ、及び該トランジスタを有するメモリデバイス

Country Status (7)

Country Link
US (5) US7598134B2 (enExample)
EP (1) EP1779425B1 (enExample)
JP (1) JP5207029B2 (enExample)
KR (1) KR100853900B1 (enExample)
CN (1) CN101288166B (enExample)
TW (1) TWI303489B (enExample)
WO (1) WO2006012626A2 (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7598134B2 (en) * 2004-07-28 2009-10-06 Micron Technology, Inc. Memory device forming methods
US20060194400A1 (en) * 2005-01-21 2006-08-31 Cooper James A Method for fabricating a semiconductor device
US7465650B2 (en) * 2005-04-14 2008-12-16 Micron Technology, Inc. Methods of forming polysilicon-comprising plugs and methods of forming FLASH memory circuitry
US7371645B2 (en) * 2005-12-30 2008-05-13 Infineon Technologies Ag Method of manufacturing a field effect transistor device with recessed channel and corner gate device
US20080283910A1 (en) * 2007-05-15 2008-11-20 Qimonda Ag Integrated circuit and method of forming an integrated circuit
US7608495B1 (en) * 2008-09-19 2009-10-27 Micron Technology, Inc. Transistor forming methods
CN101853882B (zh) 2009-04-01 2016-03-23 台湾积体电路制造股份有限公司 具有改进的开关电流比的高迁移率多面栅晶体管
US8816391B2 (en) * 2009-04-01 2014-08-26 Taiwan Semiconductor Manufacturing Company, Ltd. Source/drain engineering of devices with high-mobility channels
US8455860B2 (en) * 2009-04-30 2013-06-04 Taiwan Semiconductor Manufacturing Company, Ltd. Reducing source/drain resistance of III-V based transistors
JP4530098B1 (ja) * 2009-05-29 2010-08-25 日本ユニサンティスエレクトロニクス株式会社 半導体装置
US9768305B2 (en) 2009-05-29 2017-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Gradient ternary or quaternary multiple-gate transistor
US8617976B2 (en) 2009-06-01 2013-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Source/drain re-growth for manufacturing III-V based transistors
US8207038B2 (en) * 2010-05-24 2012-06-26 International Business Machines Corporation Stressed Fin-FET devices with low contact resistance
DE102010040064B4 (de) * 2010-08-31 2012-04-05 Globalfoundries Inc. Verringerte Schwellwertspannungs-Breitenabhängigkeit in Transistoren, die Metallgateelektrodenstrukturen mit großem ε aufweisen
CN102227001B (zh) * 2011-06-23 2013-03-06 北京大学 一种锗基nmos器件及其制备方法
BR112014004065A2 (pt) 2011-08-22 2017-03-14 Glycotope Gmbh micro-organismos carregando um antígeno de tumor
JP6053490B2 (ja) * 2011-12-23 2016-12-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8647938B1 (en) * 2012-08-09 2014-02-11 GlobalFoundries, Inc. SRAM integrated circuits with buried saddle-shaped FINFET and methods for their fabrication
EP3080148A2 (en) 2013-12-11 2016-10-19 Glycotope GmbH Glycosylated glycophorin peptides
US9905648B2 (en) 2014-02-07 2018-02-27 Stmicroelectronics, Inc. Silicon on insulator device with partially recessed gate
CN109427797B (zh) * 2017-08-24 2020-11-27 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
US10319424B1 (en) 2018-01-08 2019-06-11 Spin Memory, Inc. Adjustable current selectors
US10192789B1 (en) * 2018-01-08 2019-01-29 Spin Transfer Technologies Methods of fabricating dual threshold voltage devices
CN114256245A (zh) * 2021-12-23 2022-03-29 波平方科技(杭州)有限公司 一种高密度静态随机存储器
WO2023212886A1 (en) * 2022-05-06 2023-11-09 Yangtze Advanced Memory Industrial Innovation Center Co., Ltd Memory peripheral circuit having recessed channel transistors and method for forming the same

Family Cites Families (74)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63204766A (ja) 1987-02-20 1988-08-24 Fujitsu Ltd 半導体装置
KR960001611B1 (ko) * 1991-03-06 1996-02-02 가부시끼가이샤 한도다이 에네르기 겐뀨쇼 절연 게이트형 전계 효과 반도체 장치 및 그 제작방법
US5307305A (en) 1991-12-04 1994-04-26 Rohm Co., Ltd. Semiconductor device having field effect transistor using ferroelectric film as gate insulation film
JP3093011B2 (ja) * 1991-12-04 2000-10-03 ローム株式会社 電界効果トランジスタおよびその製造方法、ならびにそのトランジスタを用いた不揮発性記憶素子および不揮発性記憶装置
US5448081A (en) * 1993-02-22 1995-09-05 Texas Instruments Incorporated Lateral power MOSFET structure using silicon carbide
US5510630A (en) * 1993-10-18 1996-04-23 Westinghouse Electric Corporation Non-volatile random access memory cell constructed of silicon carbide
US5514604A (en) 1993-12-08 1996-05-07 General Electric Company Vertical channel silicon carbide metal-oxide-semiconductor field effect transistor with self-aligned gate for microwave and power applications, and method of making
JPH07235672A (ja) * 1994-02-21 1995-09-05 Mitsubishi Electric Corp 絶縁ゲート型半導体装置およびその製造方法
JP3745392B2 (ja) * 1994-05-26 2006-02-15 株式会社ルネサステクノロジ 半導体装置
US5672889A (en) * 1995-03-15 1997-09-30 General Electric Company Vertical channel silicon carbide metal-oxide-semiconductor field effect transistor with self-aligned gate for microwave and power applications, and method of making
JPH0945692A (ja) * 1995-07-27 1997-02-14 Sharp Corp 縦型構造トランジスタ及びその製造方法、並びに半導体装置
JP3305197B2 (ja) * 1995-09-14 2002-07-22 株式会社東芝 半導体装置
US6150671A (en) * 1996-04-24 2000-11-21 Abb Research Ltd. Semiconductor device having high channel mobility and a high breakdown voltage for high power applications
US5742076A (en) * 1996-06-05 1998-04-21 North Carolina State University Silicon carbide switching devices having near ideal breakdown voltage capability and ultralow on-state resistance
JP2910722B2 (ja) 1997-04-02 1999-06-23 日本電気株式会社 半導体装置
US7154153B1 (en) * 1997-07-29 2006-12-26 Micron Technology, Inc. Memory device
US6011278A (en) * 1997-10-28 2000-01-04 Philips Electronics North America Corporation Lateral silicon carbide semiconductor device having a drift region with a varying doping level
JPH11163329A (ja) * 1997-11-27 1999-06-18 Mitsubishi Electric Corp 半導体装置およびその製造方法
US6127233A (en) * 1997-12-05 2000-10-03 Texas Instruments Incorporated Lateral MOSFET having a barrier between the source/drain regions and the channel region
EP1049144A4 (en) * 1997-12-17 2006-12-06 Matsushita Electronics Corp THIN SEMICONDUCTOR LAYER, METHOD AND DEVICE THEREOF, SEMICONDUCTOR COMPONENT AND METHOD FOR MANUFACTURING SAME
KR100292943B1 (ko) * 1998-03-25 2001-09-17 윤종용 디램장치의제조방법
JPH11297712A (ja) * 1998-04-10 1999-10-29 Sanyo Electric Co Ltd 化合物膜の形成方法及び半導体素子の製造方法
DE69941879D1 (de) * 1998-10-09 2010-02-11 Kansai Electric Power Co Feldeffekt-halbleiterbauelement und verfahren zu dessen herstellung
JP2000269496A (ja) * 1999-03-18 2000-09-29 Toshiba Corp 半導体装置の製造方法
SE9901440A0 (en) * 1999-04-22 2000-10-23 Ind Mikroelektronik Centrum Ab A field effect transistor of SiC for high temperature application, use of such a transistor and a method for production thereof
US6281064B1 (en) * 1999-06-04 2001-08-28 International Business Machines Corporation Method for providing dual work function doping and protective insulating cap
JP2001085685A (ja) * 1999-09-13 2001-03-30 Shindengen Electric Mfg Co Ltd トランジスタ
US6903373B1 (en) * 1999-11-23 2005-06-07 Agere Systems Inc. SiC MOSFET for use as a power switch and a method of manufacturing the same
US6373076B1 (en) 1999-12-07 2002-04-16 Philips Electronics North America Corporation Passivated silicon carbide devices with low leakage current and method of fabricating
US6323506B1 (en) * 1999-12-21 2001-11-27 Philips Electronics North America Corporation Self-aligned silicon carbide LMOSFET
US6355944B1 (en) * 1999-12-21 2002-03-12 Philips Electronics North America Corporation Silicon carbide LMOSFET with gate reach-through protection
US6372618B2 (en) * 2000-01-06 2002-04-16 Micron Technology, Inc. Methods of forming semiconductor structures
US6888750B2 (en) 2000-04-28 2005-05-03 Matrix Semiconductor, Inc. Nonvolatile memory on SOI and compound semiconductor substrates and method of fabrication
JP4632107B2 (ja) * 2000-06-29 2011-02-16 エルピーダメモリ株式会社 半導体記憶装置
WO2002015254A2 (en) * 2000-08-17 2002-02-21 Koninklijke Philips Electronics N.V. Method of manufacturing a trench-gate semiconductor device and corresponding device
US6627924B2 (en) * 2001-04-30 2003-09-30 Ibm Corporation Memory system capable of operating at high temperatures and method for fabricating the same
US6552363B2 (en) * 2001-09-18 2003-04-22 International Rectifier Corporation Polysilicon FET built on silicon carbide diode substrate
US6492216B1 (en) * 2002-02-07 2002-12-10 Taiwan Semiconductor Manufacturing Company Method of forming a transistor with a strained channel
US20030235076A1 (en) * 2002-06-21 2003-12-25 Micron Technology, Inc. Multistate NROM having a storage density much greater than 1 Bit per 1F2
US7382021B2 (en) 2002-08-12 2008-06-03 Acorn Technologies, Inc. Insulated gate field-effect transistor having III-VI source/drain layer(s)
US6891234B1 (en) 2004-01-07 2005-05-10 Acorn Technologies, Inc. Transistor with workfunction-induced charge layer
US7176483B2 (en) 2002-08-12 2007-02-13 Acorn Technologies, Inc. Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
US6833556B2 (en) 2002-08-12 2004-12-21 Acorn Technologies, Inc. Insulated gate field effect transistor having passivated schottky barriers to the channel
US7084423B2 (en) 2002-08-12 2006-08-01 Acorn Technologies, Inc. Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
US7902029B2 (en) 2002-08-12 2011-03-08 Acorn Technologies, Inc. Process for fabricating a self-aligned deposited source/drain insulated gate field-effect transistor
US6909186B2 (en) * 2003-05-01 2005-06-21 International Business Machines Corporation High performance FET devices and methods therefor
US7045401B2 (en) * 2003-06-23 2006-05-16 Sharp Laboratories Of America, Inc. Strained silicon finFET device
US8125003B2 (en) * 2003-07-02 2012-02-28 Micron Technology, Inc. High-performance one-transistor memory cell
US7078742B2 (en) * 2003-07-25 2006-07-18 Taiwan Semiconductor Manufacturing Co., Ltd. Strained-channel semiconductor structure and method of fabricating the same
TWI313060B (en) * 2003-07-28 2009-08-01 Japan Science & Tech Agency Feild effect transisitor and fabricating method thereof
US20050067630A1 (en) 2003-09-25 2005-03-31 Zhao Jian H. Vertical junction field effect power transistor
US20050077574A1 (en) * 2003-10-08 2005-04-14 Chandra Mouli 1T/0C RAM cell with a wrapped-around gate device structure
US7105390B2 (en) * 2003-12-30 2006-09-12 Intel Corporation Nonplanar transistors with metal gate electrodes
US7372091B2 (en) * 2004-01-27 2008-05-13 Micron Technology, Inc. Selective epitaxy vertical integrated circuit components
US7154118B2 (en) * 2004-03-31 2006-12-26 Intel Corporation Bulk non-planar transistor having strained enhanced mobility and methods of fabrication
US7078723B2 (en) * 2004-04-06 2006-07-18 Taiwan Semiconductor Manufacturing Company, Ltd. Microelectronic device with depth adjustable sill
US20050230763A1 (en) * 2004-04-15 2005-10-20 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a microelectronic device with electrode perturbing sill
US7452778B2 (en) * 2004-06-10 2008-11-18 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor nano-wire devices and methods of fabrication
US7598134B2 (en) 2004-07-28 2009-10-06 Micron Technology, Inc. Memory device forming methods
US7259415B1 (en) 2004-09-02 2007-08-21 Micron Technology, Inc. Long retention time single transistor vertical memory gain cell
US20060068556A1 (en) * 2004-09-27 2006-03-30 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
US7465976B2 (en) 2005-05-13 2008-12-16 Intel Corporation Tunneling field effect transistor using angled implants for forming asymmetric source/drain regions
KR100755367B1 (ko) * 2005-06-08 2007-09-04 삼성전자주식회사 실린더형 게이트를 갖는 나노-라인 반도체 소자 및 그제조방법
KR100724565B1 (ko) * 2005-07-25 2007-06-04 삼성전자주식회사 코너보호패턴을 갖는 공유콘택구조, 반도체소자, 및 그제조방법들
US20070077739A1 (en) * 2005-09-30 2007-04-05 Weber Cory E Carbon controlled fixed charge process
JP4592580B2 (ja) * 2005-12-19 2010-12-01 株式会社東芝 不揮発性半導体記憶装置
US7439594B2 (en) 2006-03-16 2008-10-21 Micron Technology, Inc. Stacked non-volatile memory with silicon carbide-based amorphous silicon thin film transistors
US7915670B2 (en) 2007-07-16 2011-03-29 International Business Machines Corporation Asymmetric field effect transistor structure and method
US7843016B2 (en) * 2007-07-16 2010-11-30 International Business Machines Corporation Asymmetric field effect transistor structure and method
US7741658B2 (en) * 2007-08-21 2010-06-22 International Business Machines Corporation Self-aligned super stressed PFET
JP4798119B2 (ja) * 2007-11-06 2011-10-19 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP5652939B2 (ja) * 2010-07-07 2015-01-14 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
US8633096B2 (en) * 2010-11-11 2014-01-21 International Business Machines Corporation Creating anisotropically diffused junctions in field effect transistor devices
US8513081B2 (en) * 2011-10-13 2013-08-20 International Business Machines Corporation Carbon implant for workfunction adjustment in replacement gate transistor

Similar Documents

Publication Publication Date Title
JP5207029B2 (ja) トランジスタ、及び該トランジスタを有するメモリデバイス
JP2008508725A5 (enExample)
US7151690B2 (en) 6F2 3-Transistor DRAM gain cell
US6881627B2 (en) Flash memory with ultra thin vertical body transistors
US20100085813A1 (en) Method of driving a semiconductor memory device and a semiconductor memory device
US7911000B2 (en) Semiconductor memory device
CN101208795B (zh) 用于4.5f2动态随机存取存储器单元的具有接地栅极的沟槽隔离晶体管和其制造方法
US9093311B2 (en) Techniques for providing a semiconductor memory device
CN1930686A (zh) 具有掩埋位线的半导体构造及其形成方法
JP2010517269A (ja) 垂直アクセスデバイスを持つメモリ
KR20080015948A (ko) 반도체 구조, 메모리 어레이, 전자 시스템, 및 반도체구조를 형성하는 방법
CN101479852A (zh) 无电容器单晶体管浮体动态随机存取存储器单元及其形成方法
CN103545314A (zh) 竖直半导体器件、其制造方法、以及组件和系统
TWI453868B (zh) 記憶體陣列、半導體結構與電子系統，以及形成記憶體陣列、半導體結構與電子系統之方法
US7265419B2 (en) Semiconductor memory device with cell transistors having electrically floating channel bodies to store data
CN1213182A (zh) 用于动态随机存取存储器的存储单元
US9059030B2 (en) Memory cells having capacitor dielectric directly against a transistor source/drain region
JPS60216578A (ja) 半導体メモリ装置