CN101288166B - 存储器件，晶体管，存储单元，以及其制造方法 - Google Patents

存储器件，晶体管，存储单元，以及其制造方法 Download PDF

Info

Publication number
CN101288166B
CN101288166B CN200580025205.4A CN200580025205A CN101288166B CN 101288166 B CN101288166 B CN 101288166B CN 200580025205 A CN200580025205 A CN 200580025205A CN 101288166 B CN101288166 B CN 101288166B
Authority
CN
China
Prior art keywords
source
sic layer
drain
channel
sic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN200580025205.4A
Other languages
English (en)
Chinese (zh)
Other versions
CN101288166A (zh
Inventor
C·穆利
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of CN101288166A publication Critical patent/CN101288166A/zh
Application granted granted Critical
Publication of CN101288166B publication Critical patent/CN101288166B/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/36—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being a FinFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H10B12/056—Making the transistor the transistor being a FinFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/025—Manufacture or treatment of FETs having insulated gates [IGFET] of vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/822—Heterojunctions comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/258—Source or drain electrodes for field-effect devices characterised by the relative positions of the source or drain electrodes with respect to the gate electrode
    • H10D64/259—Source or drain electrodes being self-aligned with the gate electrode and having bottom surfaces higher than the interface between the channel and the gate dielectric
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/035—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon carbide [SiC] technology
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN200580025205.4A 2004-07-28 2005-07-25 存储器件，晶体管，存储单元，以及其制造方法 Expired - Lifetime CN101288166B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/902,297 US7598134B2 (en) 2004-07-28 2004-07-28 Memory device forming methods
US10/902,297 2004-07-28
PCT/US2005/026365 WO2006012626A2 (en) 2004-07-28 2005-07-25 Memory devices, transistors, memory cells, and methods of making same

Publications (2)

Publication Number Publication Date
CN101288166A CN101288166A (zh) 2008-10-15
CN101288166B true CN101288166B (zh) 2013-06-26

Family

ID=35500865

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200580025205.4A Expired - Lifetime CN101288166B (zh) 2004-07-28 2005-07-25 存储器件，晶体管，存储单元，以及其制造方法

Country Status (7)

Country Link
US (5) US7598134B2 (enExample)
EP (1) EP1779425B1 (enExample)
JP (1) JP5207029B2 (enExample)
KR (1) KR100853900B1 (enExample)
CN (1) CN101288166B (enExample)
TW (1) TWI303489B (enExample)
WO (1) WO2006012626A2 (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7598134B2 (en) * 2004-07-28 2009-10-06 Micron Technology, Inc. Memory device forming methods
US20060194400A1 (en) * 2005-01-21 2006-08-31 Cooper James A Method for fabricating a semiconductor device
US7465650B2 (en) * 2005-04-14 2008-12-16 Micron Technology, Inc. Methods of forming polysilicon-comprising plugs and methods of forming FLASH memory circuitry
US7371645B2 (en) * 2005-12-30 2008-05-13 Infineon Technologies Ag Method of manufacturing a field effect transistor device with recessed channel and corner gate device
US20080283910A1 (en) * 2007-05-15 2008-11-20 Qimonda Ag Integrated circuit and method of forming an integrated circuit
US7608495B1 (en) * 2008-09-19 2009-10-27 Micron Technology, Inc. Transistor forming methods
CN101853882B (zh) 2009-04-01 2016-03-23 台湾积体电路制造股份有限公司 具有改进的开关电流比的高迁移率多面栅晶体管
US8816391B2 (en) * 2009-04-01 2014-08-26 Taiwan Semiconductor Manufacturing Company, Ltd. Source/drain engineering of devices with high-mobility channels
US8455860B2 (en) * 2009-04-30 2013-06-04 Taiwan Semiconductor Manufacturing Company, Ltd. Reducing source/drain resistance of III-V based transistors
JP4530098B1 (ja) * 2009-05-29 2010-08-25 日本ユニサンティスエレクトロニクス株式会社 半導体装置
US9768305B2 (en) 2009-05-29 2017-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Gradient ternary or quaternary multiple-gate transistor
US8617976B2 (en) 2009-06-01 2013-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Source/drain re-growth for manufacturing III-V based transistors
US8207038B2 (en) * 2010-05-24 2012-06-26 International Business Machines Corporation Stressed Fin-FET devices with low contact resistance
DE102010040064B4 (de) * 2010-08-31 2012-04-05 Globalfoundries Inc. Verringerte Schwellwertspannungs-Breitenabhängigkeit in Transistoren, die Metallgateelektrodenstrukturen mit großem ε aufweisen
CN102227001B (zh) * 2011-06-23 2013-03-06 北京大学 一种锗基nmos器件及其制备方法
BR112014004065A2 (pt) 2011-08-22 2017-03-14 Glycotope Gmbh micro-organismos carregando um antígeno de tumor
JP6053490B2 (ja) * 2011-12-23 2016-12-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8647938B1 (en) * 2012-08-09 2014-02-11 GlobalFoundries, Inc. SRAM integrated circuits with buried saddle-shaped FINFET and methods for their fabrication
EP3080148A2 (en) 2013-12-11 2016-10-19 Glycotope GmbH Glycosylated glycophorin peptides
US9905648B2 (en) 2014-02-07 2018-02-27 Stmicroelectronics, Inc. Silicon on insulator device with partially recessed gate
CN109427797B (zh) * 2017-08-24 2020-11-27 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
US10319424B1 (en) 2018-01-08 2019-06-11 Spin Memory, Inc. Adjustable current selectors
US10192789B1 (en) * 2018-01-08 2019-01-29 Spin Transfer Technologies Methods of fabricating dual threshold voltage devices
CN114256245A (zh) * 2021-12-23 2022-03-29 波平方科技(杭州)有限公司 一种高密度静态随机存储器
WO2023212886A1 (en) * 2022-05-06 2023-11-09 Yangtze Advanced Memory Industrial Innovation Center Co., Ltd Memory peripheral circuit having recessed channel transistors and method for forming the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5734181A (en) * 1995-09-14 1998-03-31 Kabushiki Kaisha Toshiba Semiconductor device and manufacturing method therefor
US6355944B1 (en) * 1999-12-21 2002-03-12 Philips Electronics North America Corporation Silicon carbide LMOSFET with gate reach-through protection

Family Cites Families (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63204766A (ja) 1987-02-20 1988-08-24 Fujitsu Ltd 半導体装置
KR960001611B1 (ko) * 1991-03-06 1996-02-02 가부시끼가이샤 한도다이 에네르기 겐뀨쇼 절연 게이트형 전계 효과 반도체 장치 및 그 제작방법
US5307305A (en) 1991-12-04 1994-04-26 Rohm Co., Ltd. Semiconductor device having field effect transistor using ferroelectric film as gate insulation film
JP3093011B2 (ja) * 1991-12-04 2000-10-03 ローム株式会社 電界効果トランジスタおよびその製造方法、ならびにそのトランジスタを用いた不揮発性記憶素子および不揮発性記憶装置
US5448081A (en) * 1993-02-22 1995-09-05 Texas Instruments Incorporated Lateral power MOSFET structure using silicon carbide
US5510630A (en) * 1993-10-18 1996-04-23 Westinghouse Electric Corporation Non-volatile random access memory cell constructed of silicon carbide
US5514604A (en) 1993-12-08 1996-05-07 General Electric Company Vertical channel silicon carbide metal-oxide-semiconductor field effect transistor with self-aligned gate for microwave and power applications, and method of making
JPH07235672A (ja) * 1994-02-21 1995-09-05 Mitsubishi Electric Corp 絶縁ゲート型半導体装置およびその製造方法
JP3745392B2 (ja) * 1994-05-26 2006-02-15 株式会社ルネサステクノロジ 半導体装置
US5672889A (en) * 1995-03-15 1997-09-30 General Electric Company Vertical channel silicon carbide metal-oxide-semiconductor field effect transistor with self-aligned gate for microwave and power applications, and method of making
JPH0945692A (ja) * 1995-07-27 1997-02-14 Sharp Corp 縦型構造トランジスタ及びその製造方法、並びに半導体装置
US6150671A (en) * 1996-04-24 2000-11-21 Abb Research Ltd. Semiconductor device having high channel mobility and a high breakdown voltage for high power applications
US5742076A (en) * 1996-06-05 1998-04-21 North Carolina State University Silicon carbide switching devices having near ideal breakdown voltage capability and ultralow on-state resistance
JP2910722B2 (ja) 1997-04-02 1999-06-23 日本電気株式会社 半導体装置
US7154153B1 (en) * 1997-07-29 2006-12-26 Micron Technology, Inc. Memory device
US6011278A (en) * 1997-10-28 2000-01-04 Philips Electronics North America Corporation Lateral silicon carbide semiconductor device having a drift region with a varying doping level
JPH11163329A (ja) * 1997-11-27 1999-06-18 Mitsubishi Electric Corp 半導体装置およびその製造方法
US6127233A (en) * 1997-12-05 2000-10-03 Texas Instruments Incorporated Lateral MOSFET having a barrier between the source/drain regions and the channel region
EP1049144A4 (en) * 1997-12-17 2006-12-06 Matsushita Electronics Corp THIN SEMICONDUCTOR LAYER, METHOD AND DEVICE THEREOF, SEMICONDUCTOR COMPONENT AND METHOD FOR MANUFACTURING SAME
KR100292943B1 (ko) * 1998-03-25 2001-09-17 윤종용 디램장치의제조방법
JPH11297712A (ja) * 1998-04-10 1999-10-29 Sanyo Electric Co Ltd 化合物膜の形成方法及び半導体素子の製造方法
DE69941879D1 (de) * 1998-10-09 2010-02-11 Kansai Electric Power Co Feldeffekt-halbleiterbauelement und verfahren zu dessen herstellung
JP2000269496A (ja) * 1999-03-18 2000-09-29 Toshiba Corp 半導体装置の製造方法
SE9901440A0 (en) * 1999-04-22 2000-10-23 Ind Mikroelektronik Centrum Ab A field effect transistor of SiC for high temperature application, use of such a transistor and a method for production thereof
US6281064B1 (en) * 1999-06-04 2001-08-28 International Business Machines Corporation Method for providing dual work function doping and protective insulating cap
JP2001085685A (ja) * 1999-09-13 2001-03-30 Shindengen Electric Mfg Co Ltd トランジスタ
US6903373B1 (en) * 1999-11-23 2005-06-07 Agere Systems Inc. SiC MOSFET for use as a power switch and a method of manufacturing the same
US6373076B1 (en) 1999-12-07 2002-04-16 Philips Electronics North America Corporation Passivated silicon carbide devices with low leakage current and method of fabricating
US6323506B1 (en) * 1999-12-21 2001-11-27 Philips Electronics North America Corporation Self-aligned silicon carbide LMOSFET
US6372618B2 (en) * 2000-01-06 2002-04-16 Micron Technology, Inc. Methods of forming semiconductor structures
US6888750B2 (en) 2000-04-28 2005-05-03 Matrix Semiconductor, Inc. Nonvolatile memory on SOI and compound semiconductor substrates and method of fabrication
JP4632107B2 (ja) * 2000-06-29 2011-02-16 エルピーダメモリ株式会社 半導体記憶装置
WO2002015254A2 (en) * 2000-08-17 2002-02-21 Koninklijke Philips Electronics N.V. Method of manufacturing a trench-gate semiconductor device and corresponding device
US6627924B2 (en) * 2001-04-30 2003-09-30 Ibm Corporation Memory system capable of operating at high temperatures and method for fabricating the same
US6552363B2 (en) * 2001-09-18 2003-04-22 International Rectifier Corporation Polysilicon FET built on silicon carbide diode substrate
US6492216B1 (en) * 2002-02-07 2002-12-10 Taiwan Semiconductor Manufacturing Company Method of forming a transistor with a strained channel
US20030235076A1 (en) * 2002-06-21 2003-12-25 Micron Technology, Inc. Multistate NROM having a storage density much greater than 1 Bit per 1F2
US7382021B2 (en) 2002-08-12 2008-06-03 Acorn Technologies, Inc. Insulated gate field-effect transistor having III-VI source/drain layer(s)
US6891234B1 (en) 2004-01-07 2005-05-10 Acorn Technologies, Inc. Transistor with workfunction-induced charge layer
US7176483B2 (en) 2002-08-12 2007-02-13 Acorn Technologies, Inc. Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
US6833556B2 (en) 2002-08-12 2004-12-21 Acorn Technologies, Inc. Insulated gate field effect transistor having passivated schottky barriers to the channel
US7084423B2 (en) 2002-08-12 2006-08-01 Acorn Technologies, Inc. Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
US7902029B2 (en) 2002-08-12 2011-03-08 Acorn Technologies, Inc. Process for fabricating a self-aligned deposited source/drain insulated gate field-effect transistor
US6909186B2 (en) * 2003-05-01 2005-06-21 International Business Machines Corporation High performance FET devices and methods therefor
US7045401B2 (en) * 2003-06-23 2006-05-16 Sharp Laboratories Of America, Inc. Strained silicon finFET device
US8125003B2 (en) * 2003-07-02 2012-02-28 Micron Technology, Inc. High-performance one-transistor memory cell
US7078742B2 (en) * 2003-07-25 2006-07-18 Taiwan Semiconductor Manufacturing Co., Ltd. Strained-channel semiconductor structure and method of fabricating the same
TWI313060B (en) * 2003-07-28 2009-08-01 Japan Science & Tech Agency Feild effect transisitor and fabricating method thereof
US20050067630A1 (en) 2003-09-25 2005-03-31 Zhao Jian H. Vertical junction field effect power transistor
US20050077574A1 (en) * 2003-10-08 2005-04-14 Chandra Mouli 1T/0C RAM cell with a wrapped-around gate device structure
US7105390B2 (en) * 2003-12-30 2006-09-12 Intel Corporation Nonplanar transistors with metal gate electrodes
US7372091B2 (en) * 2004-01-27 2008-05-13 Micron Technology, Inc. Selective epitaxy vertical integrated circuit components
US7154118B2 (en) * 2004-03-31 2006-12-26 Intel Corporation Bulk non-planar transistor having strained enhanced mobility and methods of fabrication
US7078723B2 (en) * 2004-04-06 2006-07-18 Taiwan Semiconductor Manufacturing Company, Ltd. Microelectronic device with depth adjustable sill
US20050230763A1 (en) * 2004-04-15 2005-10-20 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a microelectronic device with electrode perturbing sill
US7452778B2 (en) * 2004-06-10 2008-11-18 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor nano-wire devices and methods of fabrication
US7598134B2 (en) 2004-07-28 2009-10-06 Micron Technology, Inc. Memory device forming methods
US7259415B1 (en) 2004-09-02 2007-08-21 Micron Technology, Inc. Long retention time single transistor vertical memory gain cell
US20060068556A1 (en) * 2004-09-27 2006-03-30 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
US7465976B2 (en) 2005-05-13 2008-12-16 Intel Corporation Tunneling field effect transistor using angled implants for forming asymmetric source/drain regions
KR100755367B1 (ko) * 2005-06-08 2007-09-04 삼성전자주식회사 실린더형 게이트를 갖는 나노-라인 반도체 소자 및 그제조방법
KR100724565B1 (ko) * 2005-07-25 2007-06-04 삼성전자주식회사 코너보호패턴을 갖는 공유콘택구조, 반도체소자, 및 그제조방법들
US20070077739A1 (en) * 2005-09-30 2007-04-05 Weber Cory E Carbon controlled fixed charge process
JP4592580B2 (ja) * 2005-12-19 2010-12-01 株式会社東芝 不揮発性半導体記憶装置
US7439594B2 (en) 2006-03-16 2008-10-21 Micron Technology, Inc. Stacked non-volatile memory with silicon carbide-based amorphous silicon thin film transistors
US7915670B2 (en) 2007-07-16 2011-03-29 International Business Machines Corporation Asymmetric field effect transistor structure and method
US7843016B2 (en) * 2007-07-16 2010-11-30 International Business Machines Corporation Asymmetric field effect transistor structure and method
US7741658B2 (en) * 2007-08-21 2010-06-22 International Business Machines Corporation Self-aligned super stressed PFET
JP4798119B2 (ja) * 2007-11-06 2011-10-19 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP5652939B2 (ja) * 2010-07-07 2015-01-14 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
US8633096B2 (en) * 2010-11-11 2014-01-21 International Business Machines Corporation Creating anisotropically diffused junctions in field effect transistor devices
US8513081B2 (en) * 2011-10-13 2013-08-20 International Business Machines Corporation Carbon implant for workfunction adjustment in replacement gate transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5734181A (en) * 1995-09-14 1998-03-31 Kabushiki Kaisha Toshiba Semiconductor device and manufacturing method therefor
US6355944B1 (en) * 1999-12-21 2002-03-12 Philips Electronics North America Corporation Silicon carbide LMOSFET with gate reach-through protection

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JP平10-284724A 1998.10.23
JP昭63-204766A 1988.08.24

Also Published As

Publication number Publication date
KR100853900B1 (ko) 2008-08-25
EP1779425A2 (en) 2007-05-02
US8470666B2 (en) 2013-06-25
US7598134B2 (en) 2009-10-06
US20060022239A1 (en) 2006-02-02
JP5207029B2 (ja) 2013-06-12
EP1779425B1 (en) 2012-10-03
TWI303489B (en) 2008-11-21
US20120064685A1 (en) 2012-03-15
TW200629579A (en) 2006-08-16
JP2008508725A (ja) 2008-03-21
US8415722B2 (en) 2013-04-09
US20060197137A1 (en) 2006-09-07
KR20070029820A (ko) 2007-03-14
WO2006012626A3 (en) 2008-04-17
CN101288166A (zh) 2008-10-15
US8080837B2 (en) 2011-12-20
US20130248885A1 (en) 2013-09-26
US8703566B2 (en) 2014-04-22
US20120061685A1 (en) 2012-03-15
WO2006012626A2 (en) 2006-02-02

Similar Documents

Publication Publication Date Title
CN101288166B (zh) 存储器件，晶体管，存储单元，以及其制造方法
US7183611B2 (en) SRAM constructions, and electronic systems comprising SRAM constructions
US7824982B2 (en) DRAM arrays, vertical transistor structures, and methods of forming transistor structures and DRAM arrays
US7501316B2 (en) Asymmetric memory cell
US7410856B2 (en) Methods of forming vertical transistors
US7001811B2 (en) Method for making memory cell without halo implant
US7151690B2 (en) 6F2 3-Transistor DRAM gain cell
CN101030585B (zh) 半导体存储器件以及其制造方法
JP2008508725A5 (enExample)
KR20020096743A (ko) 반도체 소자의 박막 트랜지스터 제조 방법
JP4142228B2 (ja) 半導体集積回路装置
CN103545314A (zh) 竖直半导体器件、其制造方法、以及组件和系统
US7132751B2 (en) Memory cell using silicon carbide
JPH04212453A (ja) 半導体記憶装置およびその製造方法
KR100468310B1 (ko) Dram트랜치저장캐패시터용매립-주입된플레이트형성방법
US20070181884A1 (en) Integrated circuitry, dynamic random access memory cells, and electronic systems
JP2820085B2 (ja) 半導体記憶装置とその製造方法
JP2008283158A (ja) 半導体素子及びその製造方法
US7320912B2 (en) Trench capacitors with buried isolation layer formed by an oxidation process and methods for manufacturing the same
JPS62281470A (ja) 半導体集積回路装置の製造方法
JP2007027437A (ja) 半導体装置及びその製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CX01 Expiry of patent term
CX01 Expiry of patent term

Granted publication date: 20130626