JP2008504682A - トランジスタ形成方法 - Google Patents
トランジスタ形成方法 Download PDFInfo
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- JP2008504682A JP2008504682A JP2007518088A JP2007518088A JP2008504682A JP 2008504682 A JP2008504682 A JP 2008504682A JP 2007518088 A JP2007518088 A JP 2007518088A JP 2007518088 A JP2007518088 A JP 2007518088A JP 2008504682 A JP2008504682 A JP 2008504682A
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- 238000000034 method Methods 0.000 title claims abstract description 73
- 230000015572 biosynthetic process Effects 0.000 title description 9
- 239000000463 material Substances 0.000 claims abstract description 85
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims abstract description 67
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims abstract description 64
- 125000006850 spacer group Chemical group 0.000 claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 238000000151 deposition Methods 0.000 claims abstract description 28
- 239000002019 doping agent Substances 0.000 claims abstract description 25
- 238000005530 etching Methods 0.000 claims abstract description 21
- 238000000137 annealing Methods 0.000 claims description 9
- 229910052796 boron Inorganic materials 0.000 claims description 8
- 238000002513 implantation Methods 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 5
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910021334 nickel silicide Inorganic materials 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 abstract description 51
- 239000010703 silicon Substances 0.000 abstract description 51
- 239000004065 semiconductor Substances 0.000 abstract description 13
- 229910044991 metal oxide Inorganic materials 0.000 abstract description 5
- 150000004706 metal oxides Chemical class 0.000 abstract description 5
- 229910052732 germanium Inorganic materials 0.000 abstract description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 50
- 229910021332 silicide Inorganic materials 0.000 description 20
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 20
- 108091006146 Channels Proteins 0.000 description 17
- 238000002955 isolation Methods 0.000 description 14
- 230000010354 integration Effects 0.000 description 12
- 125000004429 atom Chemical group 0.000 description 10
- 230000008021 deposition Effects 0.000 description 10
- 150000002500 ions Chemical class 0.000 description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 10
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 9
- 238000005468 ion implantation Methods 0.000 description 8
- 229910010271 silicon carbide Inorganic materials 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 229910017052 cobalt Inorganic materials 0.000 description 4
- 239000010941 cobalt Substances 0.000 description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 4
- 238000000407 epitaxy Methods 0.000 description 4
- 239000002210 silicon-based material Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 238000011065 in-situ storage Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 238000003877 atomic layer epitaxy Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910001423 beryllium ion Inorganic materials 0.000 description 2
- -1 boron ions Chemical class 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 125000004437 phosphorous atom Chemical group 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 150000003377 silicon compounds Chemical class 0.000 description 2
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
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Abstract
【選択図】 図1E
Description
[0001]本発明の実施形態は概して、半導体製造プロセスおよびデバイスの分野、より具体的には、半導体デバイスを形成するシリコン含有膜を堆積する方法に関する。
[0002]より小型のトランジスタが製造されると、シリコン含有MOSFET(金属酸化膜半導体電界効果トランジスタ)デバイスなどのサブ100nmCMOS(相補型金属酸化膜半導体)デバイス用の極めて浅いソース/ドレイン接合を生成することがより難題となりつつある。このようなMOS(FET)トランジスタは、ドーパント導電性タイプに応じてpチャネルMOS(PMOS)トランジスタおよびnチャネルMOS(NMOS)トランジスタを含んでいてもよいのに対して、PMOSはp型チャネルを有する、つまりホールがチャネルの伝導を担っており、またNMOSがn型チャネルを有する、つまり電子がチャネルの伝導を担っている。
Claims (20)
- 基板を処理する方法であって、
第1の導電性を有する基板上にゲート誘電体を形成するステップと、
前記ゲート誘電体上にゲート電極を形成するステップと、
前記基板表面に第1のドーパントを注入して、前記電極の対向する側に第2の導電性を有するソース/ドレイン領域を形成するステップであって、前記ソース/ドレイン領域が垂直部分および水平部分を有するステップと、
前記ゲート電極の横方向に対向する側壁に沿って1対の側壁スペーサを形成するステップであって、前記第1の対の側壁スペーサが前記ソース/ドレイン領域の第1の垂直部分をカバーするステップと、
前記第1のドーパントを注入して、前記ソース/ドレイン領域の前記水平部分を増大させるステップと、
前記第1の対の側壁スペーサの一部を除去して、前記ソース/ドレイン領域のより大きな垂直部分を露出するステップと、
前記電極の対向する側の前記ソース/ドレイン領域に1対の特徴限定部をエッチングするステップであって、前記ソース/ドレイン領域の少なくとも一部を除去するステップと、
前記特徴限定部(feature definitions)にシリコンゲルマニウム材料を選択的に堆積し、シリコンゲルマニウムソース/ドレイン領域を形成するステップと、
前記1対の側壁スペーサ上に側壁材料を堆積し、前記シリコンゲルマニウムソース/ドレイン領域の第1の垂直部分をカバーするステップと、
を備える方法。 - 第2のドーパントを前記堆積されたシリコンゲルマニウム材料に注入して、第3の導電性を有するシリコンゲルマニウムソース/ドレイン領域を形成するステップを更に備える、請求項1に記載の方法。
- 前記第1および第2のドーパントが、ホウ素、ヒ素、リンおよびこれらの組み合わせからなる群より選択される、請求項1に記載の方法。
- 前記第1の導電性が、n型導電性を備えており、前記第2および第3の導電性がp型導電性を備える、請求項1に記載の方法。
- 前記第1の導電性が、p型導電性を備えており、前記第2および第3の導電性がn型導電性を備える、請求項1に記載の方法。
- 前記露出されたシリコンゲルマニウム材料の一部を金属シリサイド化するステップを更に備える、請求項1に記載の方法。
- 前記金属シリサイド化における前記金属が、ニッケルシリサイドを備える、請求項6に記載の方法。
- ドーパントの各注入に続いて前記基板をアニーリングするステップを更に備える、請求項1に記載の方法。
- 前記シリコンゲルマニウム材料を堆積するステップが、前記ゲート電極の上方に前記シリコンゲルマニウム材料をある厚さに堆積する工程を備える、請求項1に記載の方法。
- 前記限定部が、凹形限定部を備える、請求項1に記載の方法。
- 基板を処理する方法であって、
第1の導電性を有する基板上にゲート誘電体を形成するステップと、
前記ゲート誘電体上にゲート電極を形成するステップと、
前記ゲート電極の横方向に対向する側壁に沿って第1の対の側壁スペーサを形成するステップと、
前記電極の対向する側に1対のソース/ドレイン領域限定部をエッチングするステップと、
前記ソース/ドレイン領域限定部にシリコンゲルマニウム材料を選択的に堆積するステップと、
前記堆積されたシリコンゲルマニウム材料にドーパントを注入して、第2の導電性を有するソース/ドレイン領域を形成するステップと、
を備える方法。 - 前記第1の対の側壁スペーサに隣接して第2の対の側壁スペーサを形成するステップであって、前記第2の対の側壁スペーサが前記シリコンゲルマニウム材料の実質的部分を露出するステップを更に備える、請求項11に記載の方法。
- 前記露出されたシリコンゲルマニウム材料の一部を金属シリサイド化するステップを更に備える、請求項12に記載の方法。
- 前記ドーパントを注入するステップが、前記第2の対の側壁スペーサを形成するステップの前に生じる、請求項12に記載の方法。
- 前記ドーパントを注入するステップに続いて前記基板をアニーリングするステップを更に備える、請求項11に記載の方法。
- 前記ソース/ドレイン領域限定部が、前記ゲート電極の下方に延びる、請求項11に記載の方法。
- 前記シリコンゲルマニウム材料を堆積するステップが、前記ゲート電極の上方に前記シリコンゲルマニウム材料をある厚さに堆積する工程を備える、請求項11に記載の方法。
- 前記ソース/ドレイン領域限定部が、凹形限定部を備える、請求項11に記載の方法。
- 前記第1の導電性が、n型導電性を備えており、前記第2の導電性がp型導電性を備える、請求項11に記載の方法。
- 前記第1の導電性が、p型導電性を備えており、前記第2の導電性がn型導電性を備える、請求項11に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US58307904P | 2004-06-24 | 2004-06-24 | |
US60/583,079 | 2004-06-24 | ||
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PCT/US2005/019328 WO2006011939A2 (en) | 2004-06-24 | 2005-06-02 | Methods for forming a transistor |
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Also Published As
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KR20070029711A (ko) | 2007-03-14 |
US20080280413A1 (en) | 2008-11-13 |
US20080299735A1 (en) | 2008-12-04 |
US7833869B2 (en) | 2010-11-16 |
WO2006011939A2 (en) | 2006-02-02 |
US20050287752A1 (en) | 2005-12-29 |
WO2006011939A3 (en) | 2006-10-19 |
US7413957B2 (en) | 2008-08-19 |
US7968413B2 (en) | 2011-06-28 |
JP5030774B2 (ja) | 2012-09-19 |
EP1759409A2 (en) | 2007-03-07 |
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