JP2008501240A - 電気化学−機械研磨組成物及び同組成物の使用方法 - Google Patents

電気化学−機械研磨組成物及び同組成物の使用方法 Download PDF

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Publication number
JP2008501240A
JP2008501240A JP2007515185A JP2007515185A JP2008501240A JP 2008501240 A JP2008501240 A JP 2008501240A JP 2007515185 A JP2007515185 A JP 2007515185A JP 2007515185 A JP2007515185 A JP 2007515185A JP 2008501240 A JP2008501240 A JP 2008501240A
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JP
Japan
Prior art keywords
poly
polishing composition
acid
water
alcohol
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
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JP2007515185A
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English (en)
Japanese (ja)
Other versions
JP2008501240A5 (enExample
Inventor
ブルシック，ブラスタ
リチャードソン，マイケル
シュレーダー，デイビッド
ツァン，チアン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials LLC
Original Assignee
Cabot Microelectronics Corp
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Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of JP2008501240A publication Critical patent/JP2008501240A/ja
Publication of JP2008501240A5 publication Critical patent/JP2008501240A5/ja
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H01L21/32125—Planarisation by chemical mechanical polishing [CMP] by simultaneously passing an electrical current, i.e. electrochemical mechanical polishing, e.g. ECMP

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2007515185A 2004-05-28 2005-05-19 電気化学−機械研磨組成物及び同組成物の使用方法 Pending JP2008501240A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/857,432 US20050263407A1 (en) 2004-05-28 2004-05-28 Electrochemical-mechanical polishing composition and method for using the same
PCT/US2005/017579 WO2005118736A1 (en) 2004-05-28 2005-05-19 Electrochemical-mechanical polishing composition and method for using the same

Publications (2)

Publication Number Publication Date
JP2008501240A true JP2008501240A (ja) 2008-01-17
JP2008501240A5 JP2008501240A5 (enExample) 2008-07-03

Family

ID=34973029

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007515185A Pending JP2008501240A (ja) 2004-05-28 2005-05-19 電気化学−機械研磨組成物及び同組成物の使用方法

Country Status (6)

Country Link
US (1) US20050263407A1 (enExample)
JP (1) JP2008501240A (enExample)
CN (1) CN1961055B (enExample)
IL (1) IL179192A0 (enExample)
TW (1) TWI316083B (enExample)
WO (1) WO2005118736A1 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2006030595A1 (ja) * 2004-09-14 2008-05-08 日立化成工業株式会社 Ｃｍｐ用研磨スラリー
JP2008529272A (ja) * 2005-01-21 2008-07-31 インターナショナル・ビジネス・マシーンズ・コーポレーション 電気化学的機械研磨のための方法及び組成物
JP2019189814A (ja) * 2018-04-27 2019-10-31 三菱ケミカル株式会社 研磨組成物
JP2023510757A (ja) * 2020-01-07 2023-03-15 シーエムシー マテリアルズ，インコーポレイティド 誘導体化ポリアミノ酸

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US7531105B2 (en) * 2004-11-05 2009-05-12 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
US7504044B2 (en) 2004-11-05 2009-03-17 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
US20060137995A1 (en) * 2004-12-29 2006-06-29 Sukanta Ghosh Method for removal of metal from a workpiece
EP1899111A2 (en) * 2005-06-06 2008-03-19 Advanced Technology Materials, Inc. Integrated chemical mechanical polishing composition and process for single platen processing
US7879255B2 (en) * 2005-11-04 2011-02-01 Applied Materials, Inc. Method and composition for electrochemically polishing a conductive material on a substrate
JP4954558B2 (ja) * 2006-01-31 2012-06-20 富士フイルム株式会社 金属用研磨液、及びそれを用いた化学的機械的研磨方法
US7732393B2 (en) * 2006-03-20 2010-06-08 Cabot Microelectronics Corporation Oxidation-stabilized CMP compositions and methods
WO2008082177A1 (en) * 2006-12-29 2008-07-10 Lg Chem, Ltd. Cmp slurry composition for forming metal wiring line
JP5616273B2 (ja) 2011-03-31 2014-10-29 富士フイルム株式会社 有機半導体ポリマー、有機半導体材料用組成物および光電池
TW201305291A (zh) * 2011-07-28 2013-02-01 Anji Microelectronics Co Ltd 化學機械拋光液
CN102337580A (zh) * 2011-09-21 2012-02-01 合肥金盟工贸有限公司 一种用于电化学抛光镁合金的离子液体抛光液及其制备方法
KR20140000496A (ko) * 2012-06-22 2014-01-03 에스케이하이닉스 주식회사 연마 조성물, 이의 제조 방법 및 이를 이용한 화학적 기계적 연마 방법
CN103012495B (zh) * 2012-11-21 2016-04-20 宁波大学 D-酒石酸2,2-二吡啶胺钴铁电功能材料及制备方法
CN102977153B (zh) * 2012-11-21 2016-04-20 宁波大学 L-酒石酸2,2-二吡啶胺钴铁电功能材料及制备方法
US9732430B2 (en) * 2013-10-24 2017-08-15 Baker Hughes Incorporated Chemical inhibition of pitting corrosion in methanolic solutions containing an organic halide
TWI583756B (zh) * 2016-01-12 2017-05-21 常州時創能源科技有限公司 結晶矽酸性拋光液的添加劑及其應用
KR102575250B1 (ko) * 2017-02-17 2023-09-06 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물, 그 제조 방법 및 연마용 조성물을 사용한 연마 방법
US11043151B2 (en) * 2017-10-03 2021-06-22 Cmc Materials, Inc. Surface treated abrasive particles for tungsten buff applications
CN110172031B (zh) * 2019-05-23 2021-03-16 北京师范大学 一种阴离子型n-取代苯胺离子液体及其制备方法
WO2022114330A1 (ko) * 2020-11-30 2022-06-02 한국과학기술연구원 Cis계 박막의 평탄화 방법, 이를 이용하여 제조된 cis계 박막 및 상기 cis계 박막을 포함하는 태양전지
CN115287739B (zh) * 2022-08-11 2025-07-29 临沂市兴冠精细化工有限公司 一种金属表面清洗剂的制备方法

Citations (5)

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US20020108861A1 (en) * 2001-02-12 2002-08-15 Ismail Emesh Method and apparatus for electrochemical planarization of a workpiece
JP2003179009A (ja) * 2001-12-11 2003-06-27 Ebara Corp 研磨液、研磨方法及び研磨装置
WO2003072672A1 (en) * 2002-02-26 2003-09-04 Applied Materials, Inc. Method and composition for polishing a substrate
JP2003311540A (ja) * 2002-04-30 2003-11-05 Sony Corp 電解研磨液、電解研磨方法及び半導体装置の製造方法
JP2007520871A (ja) * 2003-06-06 2007-07-26 アプライド　マテリアルズ　インコーポレイテッド 研磨用組成物及び導電性材料研磨方法

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CN1049259C (zh) * 1994-12-29 2000-02-09 华中理工大学 铝及铝合金焊丝的电化学抛光方法
EP0786504A3 (en) * 1996-01-29 1998-05-20 Fujimi Incorporated Polishing composition
US6117783A (en) * 1996-07-25 2000-09-12 Ekc Technology, Inc. Chemical mechanical polishing composition and process
JPH10166258A (ja) * 1996-12-06 1998-06-23 Tadahiro Omi 研磨剤組成物
US6348076B1 (en) * 1999-10-08 2002-02-19 International Business Machines Corporation Slurry for mechanical polishing (CMP) of metals and use thereof
US6379223B1 (en) * 1999-11-29 2002-04-30 Applied Materials, Inc. Method and apparatus for electrochemical-mechanical planarization
US6299741B1 (en) * 1999-11-29 2001-10-09 Applied Materials, Inc. Advanced electrolytic polish (AEP) assisted metal wafer planarization method and apparatus
US7066800B2 (en) * 2000-02-17 2006-06-27 Applied Materials Inc. Conductive polishing article for electrochemical mechanical polishing
US6811680B2 (en) * 2001-03-14 2004-11-02 Applied Materials Inc. Planarization of substrates using electrochemical mechanical polishing
US7128825B2 (en) * 2001-03-14 2006-10-31 Applied Materials, Inc. Method and composition for polishing a substrate
US7232514B2 (en) * 2001-03-14 2007-06-19 Applied Materials, Inc. Method and composition for polishing a substrate
US6899804B2 (en) * 2001-04-10 2005-05-31 Applied Materials, Inc. Electrolyte composition and treatment for electrolytic chemical mechanical polishing
US6592742B2 (en) * 2001-07-13 2003-07-15 Applied Materials Inc. Electrochemically assisted chemical polish
US7029373B2 (en) * 2001-08-14 2006-04-18 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for metal and associated materials and method of using same
US6821897B2 (en) * 2001-12-05 2004-11-23 Cabot Microelectronics Corporation Method for copper CMP using polymeric complexing agents
US20030224184A1 (en) * 2002-05-07 2003-12-04 Hermes Ann Robertson Method of producing wear resistant traffic markings

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020108861A1 (en) * 2001-02-12 2002-08-15 Ismail Emesh Method and apparatus for electrochemical planarization of a workpiece
JP2003179009A (ja) * 2001-12-11 2003-06-27 Ebara Corp 研磨液、研磨方法及び研磨装置
WO2003072672A1 (en) * 2002-02-26 2003-09-04 Applied Materials, Inc. Method and composition for polishing a substrate
JP2003311540A (ja) * 2002-04-30 2003-11-05 Sony Corp 電解研磨液、電解研磨方法及び半導体装置の製造方法
JP2007520871A (ja) * 2003-06-06 2007-07-26 アプライド　マテリアルズ　インコーポレイテッド 研磨用組成物及び導電性材料研磨方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2006030595A1 (ja) * 2004-09-14 2008-05-08 日立化成工業株式会社 Ｃｍｐ用研磨スラリー
JP2008529272A (ja) * 2005-01-21 2008-07-31 インターナショナル・ビジネス・マシーンズ・コーポレーション 電気化学的機械研磨のための方法及び組成物
JP2019189814A (ja) * 2018-04-27 2019-10-31 三菱ケミカル株式会社 研磨組成物
JP7035773B2 (ja) 2018-04-27 2022-03-15 三菱ケミカル株式会社 研磨組成物
JP2023510757A (ja) * 2020-01-07 2023-03-15 シーエムシー マテリアルズ，インコーポレイティド 誘導体化ポリアミノ酸
JP7670722B2 (ja) 2020-01-07 2025-04-30 シーエムシー マテリアルズ リミティド ライアビリティ カンパニー 誘導体化ポリアミノ酸

Also Published As

Publication number Publication date
US20050263407A1 (en) 2005-12-01
TW200611965A (en) 2006-04-16
CN1961055A (zh) 2007-05-09
IL179192A0 (en) 2007-03-08
WO2005118736A1 (en) 2005-12-15
TWI316083B (en) 2009-10-21
CN1961055B (zh) 2010-05-12

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