CN1961055B - 电化学-机械抛光组合物及使用其的方法 - Google Patents

电化学-机械抛光组合物及使用其的方法 Download PDF

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Publication number
CN1961055B
CN1961055B CN2005800173014A CN200580017301A CN1961055B CN 1961055 B CN1961055 B CN 1961055B CN 2005800173014 A CN2005800173014 A CN 2005800173014A CN 200580017301 A CN200580017301 A CN 200580017301A CN 1961055 B CN1961055 B CN 1961055B
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CN
China
Prior art keywords
poly
polishing composition
acid
water
electrochemical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN2005800173014A
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English (en)
Chinese (zh)
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CN1961055A (zh
Inventor
弗拉斯塔·布鲁西科
迈克尔·理查森
戴维·施罗德
张剑
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Cabot Corp
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Cabot Corp
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Publication date
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Publication of CN1961055A publication Critical patent/CN1961055A/zh
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H01L21/32125—Planarisation by chemical mechanical polishing [CMP] by simultaneously passing an electrical current, i.e. electrochemical mechanical polishing, e.g. ECMP

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN2005800173014A 2004-05-28 2005-05-19 电化学-机械抛光组合物及使用其的方法 Expired - Fee Related CN1961055B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/857,432 US20050263407A1 (en) 2004-05-28 2004-05-28 Electrochemical-mechanical polishing composition and method for using the same
US10/857,432 2004-05-28
PCT/US2005/017579 WO2005118736A1 (en) 2004-05-28 2005-05-19 Electrochemical-mechanical polishing composition and method for using the same

Publications (2)

Publication Number Publication Date
CN1961055A CN1961055A (zh) 2007-05-09
CN1961055B true CN1961055B (zh) 2010-05-12

Family

ID=34973029

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2005800173014A Expired - Fee Related CN1961055B (zh) 2004-05-28 2005-05-19 电化学-机械抛光组合物及使用其的方法

Country Status (6)

Country Link
US (1) US20050263407A1 (enExample)
JP (1) JP2008501240A (enExample)
CN (1) CN1961055B (enExample)
IL (1) IL179192A0 (enExample)
TW (1) TWI316083B (enExample)
WO (1) WO2005118736A1 (enExample)

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US7531105B2 (en) * 2004-11-05 2009-05-12 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
US7504044B2 (en) 2004-11-05 2009-03-17 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
US20060137995A1 (en) * 2004-12-29 2006-06-29 Sukanta Ghosh Method for removal of metal from a workpiece
US20060163083A1 (en) * 2005-01-21 2006-07-27 International Business Machines Corporation Method and composition for electro-chemical-mechanical polishing
EP1899111A2 (en) * 2005-06-06 2008-03-19 Advanced Technology Materials, Inc. Integrated chemical mechanical polishing composition and process for single platen processing
US7879255B2 (en) * 2005-11-04 2011-02-01 Applied Materials, Inc. Method and composition for electrochemically polishing a conductive material on a substrate
JP4954558B2 (ja) * 2006-01-31 2012-06-20 富士フイルム株式会社 金属用研磨液、及びそれを用いた化学的機械的研磨方法
US7732393B2 (en) * 2006-03-20 2010-06-08 Cabot Microelectronics Corporation Oxidation-stabilized CMP compositions and methods
WO2008082177A1 (en) * 2006-12-29 2008-07-10 Lg Chem, Ltd. Cmp slurry composition for forming metal wiring line
JP5616273B2 (ja) 2011-03-31 2014-10-29 富士フイルム株式会社 有機半導体ポリマー、有機半導体材料用組成物および光電池
TW201305291A (zh) * 2011-07-28 2013-02-01 Anji Microelectronics Co Ltd 化學機械拋光液
CN102337580A (zh) * 2011-09-21 2012-02-01 合肥金盟工贸有限公司 一种用于电化学抛光镁合金的离子液体抛光液及其制备方法
KR20140000496A (ko) * 2012-06-22 2014-01-03 에스케이하이닉스 주식회사 연마 조성물, 이의 제조 방법 및 이를 이용한 화학적 기계적 연마 방법
CN103012495B (zh) * 2012-11-21 2016-04-20 宁波大学 D-酒石酸2,2-二吡啶胺钴铁电功能材料及制备方法
CN102977153B (zh) * 2012-11-21 2016-04-20 宁波大学 L-酒石酸2,2-二吡啶胺钴铁电功能材料及制备方法
US9732430B2 (en) * 2013-10-24 2017-08-15 Baker Hughes Incorporated Chemical inhibition of pitting corrosion in methanolic solutions containing an organic halide
TWI583756B (zh) * 2016-01-12 2017-05-21 常州時創能源科技有限公司 結晶矽酸性拋光液的添加劑及其應用
KR102575250B1 (ko) * 2017-02-17 2023-09-06 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물, 그 제조 방법 및 연마용 조성물을 사용한 연마 방법
US11043151B2 (en) * 2017-10-03 2021-06-22 Cmc Materials, Inc. Surface treated abrasive particles for tungsten buff applications
JP7035773B2 (ja) * 2018-04-27 2022-03-15 三菱ケミカル株式会社 研磨組成物
CN110172031B (zh) * 2019-05-23 2021-03-16 北京师范大学 一种阴离子型n-取代苯胺离子液体及其制备方法
KR102859110B1 (ko) * 2020-01-07 2025-09-12 씨엠씨 머티리얼즈 엘엘씨 유도체화된 폴리아미노산
WO2022114330A1 (ko) * 2020-11-30 2022-06-02 한국과학기술연구원 Cis계 박막의 평탄화 방법, 이를 이용하여 제조된 cis계 박막 및 상기 cis계 박막을 포함하는 태양전지
CN115287739B (zh) * 2022-08-11 2025-07-29 临沂市兴冠精细化工有限公司 一种金属表面清洗剂的制备方法

Citations (4)

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CN1107904A (zh) * 1994-12-29 1995-09-06 华中理工大学 铝及铝合金焊丝的电化学抛光方法
US20030178320A1 (en) * 2001-03-14 2003-09-25 Applied Materials, Inc. Method and composition for polishing a substrate
US20030234184A1 (en) * 2001-03-14 2003-12-25 Applied Materials, Inc. Method and composition for polishing a substrate
US20040053499A1 (en) * 2001-03-14 2004-03-18 Applied Materials, Inc. Method and composition for polishing a substrate

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EP0786504A3 (en) * 1996-01-29 1998-05-20 Fujimi Incorporated Polishing composition
US6117783A (en) * 1996-07-25 2000-09-12 Ekc Technology, Inc. Chemical mechanical polishing composition and process
JPH10166258A (ja) * 1996-12-06 1998-06-23 Tadahiro Omi 研磨剤組成物
US6348076B1 (en) * 1999-10-08 2002-02-19 International Business Machines Corporation Slurry for mechanical polishing (CMP) of metals and use thereof
US6379223B1 (en) * 1999-11-29 2002-04-30 Applied Materials, Inc. Method and apparatus for electrochemical-mechanical planarization
US6299741B1 (en) * 1999-11-29 2001-10-09 Applied Materials, Inc. Advanced electrolytic polish (AEP) assisted metal wafer planarization method and apparatus
US7066800B2 (en) * 2000-02-17 2006-06-27 Applied Materials Inc. Conductive polishing article for electrochemical mechanical polishing
US6736952B2 (en) * 2001-02-12 2004-05-18 Speedfam-Ipec Corporation Method and apparatus for electrochemical planarization of a workpiece
US6811680B2 (en) * 2001-03-14 2004-11-02 Applied Materials Inc. Planarization of substrates using electrochemical mechanical polishing
US6899804B2 (en) * 2001-04-10 2005-05-31 Applied Materials, Inc. Electrolyte composition and treatment for electrolytic chemical mechanical polishing
US6592742B2 (en) * 2001-07-13 2003-07-15 Applied Materials Inc. Electrochemically assisted chemical polish
US7029373B2 (en) * 2001-08-14 2006-04-18 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for metal and associated materials and method of using same
US6821897B2 (en) * 2001-12-05 2004-11-23 Cabot Microelectronics Corporation Method for copper CMP using polymeric complexing agents
JP3813865B2 (ja) * 2001-12-11 2006-08-23 株式会社荏原製作所 研磨方法及び研磨装置
KR20040093725A (ko) * 2002-02-26 2004-11-08 어플라이드 머티어리얼스, 인코포레이티드 기판 연마용 조성물 및 방법
JP2003311540A (ja) * 2002-04-30 2003-11-05 Sony Corp 電解研磨液、電解研磨方法及び半導体装置の製造方法
US20030224184A1 (en) * 2002-05-07 2003-12-04 Hermes Ann Robertson Method of producing wear resistant traffic markings

Patent Citations (6)

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CN1107904A (zh) * 1994-12-29 1995-09-06 华中理工大学 铝及铝合金焊丝的电化学抛光方法
US20030178320A1 (en) * 2001-03-14 2003-09-25 Applied Materials, Inc. Method and composition for polishing a substrate
US20030234184A1 (en) * 2001-03-14 2003-12-25 Applied Materials, Inc. Method and composition for polishing a substrate
US20040053499A1 (en) * 2001-03-14 2004-03-18 Applied Materials, Inc. Method and composition for polishing a substrate
US20040248412A1 (en) * 2003-06-06 2004-12-09 Liu Feng Q. Method and composition for fine copper slurry for low dishing in ECMP
WO2004111146A1 (en) * 2003-06-06 2004-12-23 Applied Materials, Inc. Polishing composition and method for polishing a conductive material

Non-Patent Citations (2)

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说明书[0015],[0035],[0036],[0041],[0043],[0045],[0064],[0072],权利要求1-35.
说明书[0033],[0034],[0062],[0063],[0077]-[0116],权利要求1-68.

Also Published As

Publication number Publication date
US20050263407A1 (en) 2005-12-01
TW200611965A (en) 2006-04-16
CN1961055A (zh) 2007-05-09
IL179192A0 (en) 2007-03-08
WO2005118736A1 (en) 2005-12-15
TWI316083B (en) 2009-10-21
JP2008501240A (ja) 2008-01-17

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Granted publication date: 20100512

Termination date: 20120519