JP2008311664A5 - - Google Patents

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Publication number
JP2008311664A5
JP2008311664A5 JP2008155877A JP2008155877A JP2008311664A5 JP 2008311664 A5 JP2008311664 A5 JP 2008311664A5 JP 2008155877 A JP2008155877 A JP 2008155877A JP 2008155877 A JP2008155877 A JP 2008155877A JP 2008311664 A5 JP2008311664 A5 JP 2008311664A5
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JP
Japan
Prior art keywords
phase change
precursor
forming
group
change material
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JP2008155877A
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English (en)
Japanese (ja)
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JP2008311664A (ja
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Priority claimed from KR1020070059001A external-priority patent/KR100888617B1/ko
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Publication of JP2008311664A publication Critical patent/JP2008311664A/ja
Publication of JP2008311664A5 publication Critical patent/JP2008311664A5/ja
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JP2008155877A 2007-06-15 2008-06-13 相変化メモリ装置及びその形成方法 Pending JP2008311664A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070059001A KR100888617B1 (ko) 2007-06-15 2007-06-15 상변화 메모리 장치 및 그 형성 방법

Publications (2)

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JP2008311664A JP2008311664A (ja) 2008-12-25
JP2008311664A5 true JP2008311664A5 (enExample) 2011-08-11

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ID=40131450

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JP2008155877A Pending JP2008311664A (ja) 2007-06-15 2008-06-13 相変化メモリ装置及びその形成方法

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US (3) US7943502B2 (enExample)
JP (1) JP2008311664A (enExample)
KR (1) KR100888617B1 (enExample)
TW (1) TW200908303A (enExample)

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