JP2011518951A5 - - Google Patents
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- JP2011518951A5 JP2011518951A5 JP2011506454A JP2011506454A JP2011518951A5 JP 2011518951 A5 JP2011518951 A5 JP 2011518951A5 JP 2011506454 A JP2011506454 A JP 2011506454A JP 2011506454 A JP2011506454 A JP 2011506454A JP 2011518951 A5 JP2011518951 A5 JP 2011518951A5
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- Prior art keywords
- reactant
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- precursor
- gas phase
- substrate
- Prior art date
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- 239000000376 reactant Substances 0.000 claims 47
- 238000000034 method Methods 0.000 claims 37
- 239000012071 phase Substances 0.000 claims 22
- 239000007789 gas Substances 0.000 claims 20
- 229910052714 tellurium Inorganic materials 0.000 claims 20
- 239000002243 precursor Substances 0.000 claims 18
- 229910052711 selenium Inorganic materials 0.000 claims 16
- 238000000151 deposition Methods 0.000 claims 13
- 230000008021 deposition Effects 0.000 claims 13
- 239000000758 substrate Substances 0.000 claims 13
- 239000010409 thin film Substances 0.000 claims 9
- 239000012808 vapor phase Substances 0.000 claims 7
- 125000000217 alkyl group Chemical group 0.000 claims 6
- 239000010408 film Substances 0.000 claims 6
- 125000005843 halogen group Chemical group 0.000 claims 6
- 125000004429 atom Chemical group 0.000 claims 5
- 229910052736 halogen Inorganic materials 0.000 claims 5
- 239000002356 single layer Substances 0.000 claims 5
- 238000000231 atomic layer deposition Methods 0.000 claims 4
- 239000006227 byproduct Substances 0.000 claims 3
- 125000004432 carbon atom Chemical group C* 0.000 claims 3
- 229910002909 Bi-Te Inorganic materials 0.000 claims 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 claims 2
- 239000000047 product Substances 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 229910017932 Cu—Sb Inorganic materials 0.000 claims 1
- 239000006096 absorbing agent Substances 0.000 claims 1
- 125000003342 alkenyl group Chemical group 0.000 claims 1
- 125000000304 alkynyl group Chemical group 0.000 claims 1
- 229910052787 antimony Inorganic materials 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- 125000003118 aryl group Chemical group 0.000 claims 1
- 229910052797 bismuth Inorganic materials 0.000 claims 1
- 229910052794 bromium Inorganic materials 0.000 claims 1
- 239000003054 catalyst Substances 0.000 claims 1
- 229910052801 chlorine Inorganic materials 0.000 claims 1
- 125000004122 cyclic group Chemical group 0.000 claims 1
- 239000002019 doping agent Substances 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 150000002367 halogens Chemical class 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- 229910052740 iodine Inorganic materials 0.000 claims 1
- 229910052748 manganese Inorganic materials 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000002904 solvent Substances 0.000 claims 1
- 229910052717 sulfur Inorganic materials 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US4807708P | 2008-04-25 | 2008-04-25 | |
| US61/048,077 | 2008-04-25 | ||
| US11212808P | 2008-11-06 | 2008-11-06 | |
| US61/112,128 | 2008-11-06 | ||
| US11789608P | 2008-11-25 | 2008-11-25 | |
| US61/117,896 | 2008-11-25 | ||
| PCT/US2009/041561 WO2009132207A2 (en) | 2008-04-25 | 2009-04-23 | Synthesis and use of precursors for ald of tellurium and selenium thin films |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011518951A JP2011518951A (ja) | 2011-06-30 |
| JP2011518951A5 true JP2011518951A5 (enExample) | 2012-06-07 |
| JP5718808B2 JP5718808B2 (ja) | 2015-05-13 |
Family
ID=41217422
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011506454A Active JP5718808B2 (ja) | 2008-04-25 | 2009-04-23 | テルルおよびセレン薄膜のａｌｄのための前駆体の合成および使用 |
Country Status (7)
| Country | Link |
|---|---|
| US (5) | US9175390B2 (enExample) |
| EP (2) | EP2860279A1 (enExample) |
| JP (1) | JP5718808B2 (enExample) |
| KR (2) | KR101580575B1 (enExample) |
| CN (1) | CN102076882B (enExample) |
| TW (1) | TWI481739B (enExample) |
| WO (1) | WO2009132207A2 (enExample) |
Families Citing this family (43)
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| US8765223B2 (en) * | 2008-05-08 | 2014-07-01 | Air Products And Chemicals, Inc. | Binary and ternary metal chalcogenide materials and method of making and using same |
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| US8636845B2 (en) | 2008-06-25 | 2014-01-28 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Metal heterocyclic compounds for deposition of thin films |
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| CN113699506B (zh) * | 2020-05-20 | 2022-08-30 | 中国科学院微电子研究所 | 一种碘化亚铜薄膜的制备方法 |
| CN113699505B (zh) * | 2020-05-20 | 2022-08-30 | 中国科学院微电子研究所 | 一种掺杂的碘化亚铜薄膜的制备方法 |
| CN111725399A (zh) * | 2020-06-24 | 2020-09-29 | 清华大学 | 一种基于氧族化合物薄膜的选通器及其制备方法 |
| CN112501583B (zh) * | 2020-11-26 | 2023-01-24 | 北京大学深圳研究生院 | 一种过渡金属二硒化物薄膜的制备方法 |
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| CN113072915B (zh) * | 2021-03-24 | 2022-03-11 | 华中科技大学 | 基于氧掺杂的Sb2Te3相变材料、相变存储器及制备方法 |
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