JP2008277757A - 半導体チップと基板との間の半田接続部およびその製造 - Google Patents

半導体チップと基板との間の半田接続部およびその製造 Download PDF

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Publication number
JP2008277757A
JP2008277757A JP2008050828A JP2008050828A JP2008277757A JP 2008277757 A JP2008277757 A JP 2008277757A JP 2008050828 A JP2008050828 A JP 2008050828A JP 2008050828 A JP2008050828 A JP 2008050828A JP 2008277757 A JP2008277757 A JP 2008277757A
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Japan
Prior art keywords
semiconductor chip
solder
substrate
solder connection
surface region
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Pending
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JP2008050828A
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English (en)
Japanese (ja)
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JP2008277757A5 (enExample
Inventor
Volker Gabler
ガブラー フォルカー
Thomas Licht
リヒト トーマス
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Infineon Technologies AG
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Infineon Technologies AG
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Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Publication of JP2008277757A publication Critical patent/JP2008277757A/ja
Publication of JP2008277757A5 publication Critical patent/JP2008277757A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/411—Chip-supporting parts, e.g. die pads
    • H10W70/417—Bonding materials between chips and die pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H10W72/07178—Means for aligning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07332—Compression bonding, e.g. thermocompression bonding
    • H10W72/07333—Ultrasonic bonding, e.g. thermosonic bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07336—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00—Subject matter not provided for in other groups of this subclass

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  • Die Bonding (AREA)
JP2008050828A 2007-03-06 2008-02-29 半導体チップと基板との間の半田接続部およびその製造 Pending JP2008277757A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102007010882A DE102007010882B4 (de) 2007-03-06 2007-03-06 Verfahren zur Herstellung einer Lötverbindung zwischen einem Halbleiterchip und einem Substrat

Publications (2)

Publication Number Publication Date
JP2008277757A true JP2008277757A (ja) 2008-11-13
JP2008277757A5 JP2008277757A5 (enExample) 2010-11-18

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ID=39712865

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008050828A Pending JP2008277757A (ja) 2007-03-06 2008-02-29 半導体チップと基板との間の半田接続部およびその製造

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Country Link
JP (1) JP2008277757A (enExample)
DE (1) DE102007010882B4 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101920405A (zh) * 2010-08-23 2010-12-22 中国电力科学研究院 一种镀锌钢接地网用锡铅基复合钎料及其制备方法
JP2011061170A (ja) * 2009-09-04 2011-03-24 Paragon Semiconductor Lighting Technology Co Ltd 放熱効果を高め発光効率を向上させることができる発光ダイオードのパッケージ構造とその製作方法
CN115609102A (zh) * 2022-09-26 2023-01-17 西安空间无线电技术研究所 一种芯片热沉组件低空洞率焊接方法
CN119506864A (zh) * 2024-11-12 2025-02-25 南京航空航天大学 一种用于水下激光熔覆的自动定位装置与方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115945754A (zh) * 2022-12-28 2023-04-11 哈尔滨工业大学重庆研究院 一种降低铅锡银焊接元器件空洞率的焊接工艺

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5368571A (en) * 1976-11-30 1978-06-19 Nec Home Electronics Ltd Production of semiconductor device
JPS53109477A (en) * 1977-03-07 1978-09-25 Toshiba Corp Mounting method of semiconductor element
JPH04171888A (ja) * 1990-11-05 1992-06-19 Matsushita Electric Ind Co Ltd リフロー半田付け方法
JPH11154785A (ja) * 1997-11-20 1999-06-08 Hitachi Ltd 電子部品の製造方法
JP2003297860A (ja) * 2002-03-29 2003-10-17 Fuji Electric Co Ltd 半導体装置の製造方法
JP2006054227A (ja) * 2004-08-10 2006-02-23 Hitachi Ltd 半導体パワーモジュール及び半導体装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05291314A (ja) * 1992-04-10 1993-11-05 Fujitsu General Ltd ベアチップの半田付方法
DE4235908A1 (de) * 1992-10-23 1994-04-28 Telefunken Microelectron Verfahren zum Verlöten eines Halbleiterkörpers mit einem Trägerelement
JP2005205418A (ja) * 2004-01-20 2005-08-04 Denso Corp 接合構造体の製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5368571A (en) * 1976-11-30 1978-06-19 Nec Home Electronics Ltd Production of semiconductor device
JPS53109477A (en) * 1977-03-07 1978-09-25 Toshiba Corp Mounting method of semiconductor element
JPH04171888A (ja) * 1990-11-05 1992-06-19 Matsushita Electric Ind Co Ltd リフロー半田付け方法
JPH11154785A (ja) * 1997-11-20 1999-06-08 Hitachi Ltd 電子部品の製造方法
JP2003297860A (ja) * 2002-03-29 2003-10-17 Fuji Electric Co Ltd 半導体装置の製造方法
JP2006054227A (ja) * 2004-08-10 2006-02-23 Hitachi Ltd 半導体パワーモジュール及び半導体装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011061170A (ja) * 2009-09-04 2011-03-24 Paragon Semiconductor Lighting Technology Co Ltd 放熱効果を高め発光効率を向上させることができる発光ダイオードのパッケージ構造とその製作方法
CN101920405A (zh) * 2010-08-23 2010-12-22 中国电力科学研究院 一种镀锌钢接地网用锡铅基复合钎料及其制备方法
CN101920405B (zh) * 2010-08-23 2013-07-31 中国电力科学研究院 一种镀锌钢接地网用锡铅基复合钎料及其制备方法
CN115609102A (zh) * 2022-09-26 2023-01-17 西安空间无线电技术研究所 一种芯片热沉组件低空洞率焊接方法
CN119506864A (zh) * 2024-11-12 2025-02-25 南京航空航天大学 一种用于水下激光熔覆的自动定位装置与方法

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Publication number Publication date
DE102007010882B4 (de) 2009-01-29
DE102007010882A1 (de) 2008-09-25

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