JP2008277757A5 - - Google Patents

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Publication number
JP2008277757A5
JP2008277757A5 JP2008050828A JP2008050828A JP2008277757A5 JP 2008277757 A5 JP2008277757 A5 JP 2008277757A5 JP 2008050828 A JP2008050828 A JP 2008050828A JP 2008050828 A JP2008050828 A JP 2008050828A JP 2008277757 A5 JP2008277757 A5 JP 2008277757A5
Authority
JP
Japan
Prior art keywords
process according
solder material
substrate
solder
semiconductor chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008050828A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008277757A (ja
Filing date
Publication date
Priority claimed from DE102007010882A external-priority patent/DE102007010882B4/de
Application filed filed Critical
Publication of JP2008277757A publication Critical patent/JP2008277757A/ja
Publication of JP2008277757A5 publication Critical patent/JP2008277757A5/ja
Pending legal-status Critical Current

Links

JP2008050828A 2007-03-06 2008-02-29 半導体チップと基板との間の半田接続部およびその製造 Pending JP2008277757A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102007010882A DE102007010882B4 (de) 2007-03-06 2007-03-06 Verfahren zur Herstellung einer Lötverbindung zwischen einem Halbleiterchip und einem Substrat

Publications (2)

Publication Number Publication Date
JP2008277757A JP2008277757A (ja) 2008-11-13
JP2008277757A5 true JP2008277757A5 (enExample) 2010-11-18

Family

ID=39712865

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008050828A Pending JP2008277757A (ja) 2007-03-06 2008-02-29 半導体チップと基板との間の半田接続部およびその製造

Country Status (2)

Country Link
JP (1) JP2008277757A (enExample)
DE (1) DE102007010882B4 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI403004B (en) * 2009-09-04 2013-07-21 Led package structure for increasing heat-dissipating effect and light-emitting efficiency and method for making the same
CN101920405B (zh) * 2010-08-23 2013-07-31 中国电力科学研究院 一种镀锌钢接地网用锡铅基复合钎料及其制备方法
CN115609102B (zh) * 2022-09-26 2025-06-03 西安空间无线电技术研究所 一种芯片热沉组件低空洞率焊接方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5368571A (en) * 1976-11-30 1978-06-19 Nec Home Electronics Ltd Production of semiconductor device
JPS53109477A (en) * 1977-03-07 1978-09-25 Toshiba Corp Mounting method of semiconductor element
JPH0797701B2 (ja) * 1990-11-05 1995-10-18 松下電器産業株式会社 リフロー半田付け方法
JPH05291314A (ja) * 1992-04-10 1993-11-05 Fujitsu General Ltd ベアチップの半田付方法
DE4235908A1 (de) * 1992-10-23 1994-04-28 Telefunken Microelectron Verfahren zum Verlöten eines Halbleiterkörpers mit einem Trägerelement
JP3753524B2 (ja) * 1997-11-20 2006-03-08 株式会社日立製作所 電子部品の製造方法
JP3809806B2 (ja) * 2002-03-29 2006-08-16 富士電機デバイステクノロジー株式会社 半導体装置の製造方法
JP2005205418A (ja) * 2004-01-20 2005-08-04 Denso Corp 接合構造体の製造方法
JP2006054227A (ja) * 2004-08-10 2006-02-23 Hitachi Ltd 半導体パワーモジュール及び半導体装置

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