JP2008277748A - レジストパターンの形成方法とその方法により製造した半導体デバイス - Google Patents

レジストパターンの形成方法とその方法により製造した半導体デバイス Download PDF

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Publication number
JP2008277748A
JP2008277748A JP2008021604A JP2008021604A JP2008277748A JP 2008277748 A JP2008277748 A JP 2008277748A JP 2008021604 A JP2008021604 A JP 2008021604A JP 2008021604 A JP2008021604 A JP 2008021604A JP 2008277748 A JP2008277748 A JP 2008277748A
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JP
Japan
Prior art keywords
water repellent
substrate
film
water
layer
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Pending
Application number
JP2008021604A
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English (en)
Japanese (ja)
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JP2008277748A5 (https=
Inventor
Takeo Ishibashi
健夫 石橋
Mamoru Terai
護 寺井
Takuya Hagiwara
琢也 萩原
Atsumi Yamaguchi
敦美 山口
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Renesas Technology Corp
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Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2008021604A priority Critical patent/JP2008277748A/ja
Priority to US12/078,098 priority patent/US20080241489A1/en
Priority to TW097110930A priority patent/TW200845128A/zh
Priority to EP08005983A priority patent/EP1975719A3/en
Priority to KR1020080029334A priority patent/KR20080089296A/ko
Publication of JP2008277748A publication Critical patent/JP2008277748A/ja
Publication of JP2008277748A5 publication Critical patent/JP2008277748A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
JP2008021604A 2007-03-30 2008-01-31 レジストパターンの形成方法とその方法により製造した半導体デバイス Pending JP2008277748A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2008021604A JP2008277748A (ja) 2007-03-30 2008-01-31 レジストパターンの形成方法とその方法により製造した半導体デバイス
US12/078,098 US20080241489A1 (en) 2007-03-30 2008-03-27 Method of forming resist pattern and semiconductor device manufactured with the same
TW097110930A TW200845128A (en) 2007-03-30 2008-03-27 Method of forming resist pattern and semiconductor device manufactured with the same
EP08005983A EP1975719A3 (en) 2007-03-30 2008-03-28 Method of forming resist pattern and semiconductor device manufactured with the same
KR1020080029334A KR20080089296A (ko) 2007-03-30 2008-03-28 레지스트 패턴의 형성 방법과 그 방법에 의해 제조한반도체 디바이스

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007094042 2007-03-30
JP2008021604A JP2008277748A (ja) 2007-03-30 2008-01-31 レジストパターンの形成方法とその方法により製造した半導体デバイス

Publications (2)

Publication Number Publication Date
JP2008277748A true JP2008277748A (ja) 2008-11-13
JP2008277748A5 JP2008277748A5 (https=) 2011-02-03

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ID=39995700

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008021604A Pending JP2008277748A (ja) 2007-03-30 2008-01-31 レジストパターンの形成方法とその方法により製造した半導体デバイス

Country Status (4)

Country Link
JP (1) JP2008277748A (https=)
KR (1) KR20080089296A (https=)
CN (1) CN101276158A (https=)
TW (1) TW200845128A (https=)

Cited By (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009117832A (ja) * 2007-11-06 2009-05-28 Asml Netherlands Bv リソグラフィの基板を準備する方法、基板、デバイス製造方法、密封コーティングアプリケータ及び密封コーティング測定装置
JP2010135428A (ja) * 2008-12-02 2010-06-17 Toshiba Corp 基板保持部材及び半導体装置の製造方法
WO2010123001A1 (ja) * 2009-04-24 2010-10-28 セントラル硝子株式会社 シリコンウェハ用洗浄剤
JP2011009537A (ja) * 2009-06-26 2011-01-13 Tokyo Electron Ltd 液処理装置、液処理方法および記憶媒体
JP2011129585A (ja) * 2009-12-15 2011-06-30 Toshiba Corp 半導体基板の表面処理装置及び方法
JP2011233758A (ja) * 2010-04-28 2011-11-17 Tokyo Electron Ltd 基板処理方法
WO2011145500A1 (ja) * 2010-05-19 2011-11-24 セントラル硝子株式会社 保護膜形成用薬液
WO2011155407A1 (ja) * 2010-06-07 2011-12-15 セントラル硝子株式会社 保護膜形成用薬液
WO2012002145A1 (ja) * 2010-06-30 2012-01-05 セントラル硝子株式会社 撥水性保護膜形成用薬液
WO2012002200A1 (ja) * 2010-06-30 2012-01-05 セントラル硝子株式会社 ウェハの洗浄方法
WO2012002243A1 (ja) * 2010-06-28 2012-01-05 セントラル硝子株式会社 撥水性保護膜形成剤、撥水性保護膜形成用薬液と該薬液を用いたウェハの洗浄方法
JP2012033881A (ja) * 2010-06-28 2012-02-16 Central Glass Co Ltd 撥水性保護膜形成用薬液と該薬液を用いたウェハの洗浄方法
JP2012044065A (ja) * 2010-08-20 2012-03-01 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置
KR20120074197A (ko) * 2010-12-27 2012-07-05 도쿄엘렉트론가부시키가이샤 기판 액처리 장치 및 기판 액처리 방법 및 기판 액처리 프로그램을 기록한 컴퓨터 판독 가능한 기록 매체
JP2012178432A (ja) * 2011-02-25 2012-09-13 Central Glass Co Ltd 撥水性保護膜形成薬液
JP2012178431A (ja) * 2011-02-25 2012-09-13 Central Glass Co Ltd ウェハの洗浄方法
WO2013080832A1 (ja) * 2011-11-29 2013-06-06 セントラル硝子株式会社 保護膜形成用薬液の調製方法
WO2013115021A1 (ja) * 2012-02-01 2013-08-08 セントラル硝子株式会社 撥水性保護膜形成用薬液、撥水性保護膜形成用薬液キット、及びウェハの洗浄方法
KR101396271B1 (ko) * 2010-06-30 2014-05-16 샌트랄 글래스 컴퍼니 리미티드 웨이퍼의 세정방법
US8821974B2 (en) 2010-08-20 2014-09-02 Dainippon Screen Mfg. Co., Ltd. Substrate processing method
JP2015079992A (ja) * 2014-12-22 2015-04-23 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
US9053924B2 (en) 2008-12-26 2015-06-09 Central Glass Company, Limited Cleaning agent for silicon wafer
KR101572583B1 (ko) * 2010-06-28 2015-11-30 샌트랄 글래스 컴퍼니 리미티드 발수성 보호막 형성제, 발수성 보호막 형성용 약액과 당해 약액을 이용한 웨이퍼의 세정 방법
US9228120B2 (en) 2010-06-07 2016-01-05 Central Glass Company, Limited Liquid chemical for forming protecting film
JP2016187037A (ja) * 2011-10-28 2016-10-27 セントラル硝子株式会社 保護膜形成用薬液の調製方法
US9711344B2 (en) 2015-02-24 2017-07-18 Renesas Electronics Corporation Semiconductor device manufacturing method using a multilayer resist
WO2020105340A1 (ja) * 2018-11-22 2020-05-28 セントラル硝子株式会社 ベベル部処理剤組成物およびウェハの製造方法
CN111630634A (zh) * 2018-01-30 2020-09-04 株式会社斯库林集团 处理液吐出配管以及基板处理装置
CN113823549A (zh) * 2020-06-19 2021-12-21 中国科学院微电子研究所 半导体结构的制造方法
CN115699259A (zh) * 2020-05-21 2023-02-03 中央硝子株式会社 半导体基板的表面处理方法及表面处理剂组合物
CN118483879A (zh) * 2024-06-03 2024-08-13 浙江大学 基于有机介质的ic光刻设备浸没边界流场收束及撤除方法

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Publication number Priority date Publication date Assignee Title
KR20110018030A (ko) * 2009-08-17 2011-02-23 주식회사 동진쎄미켐 잉크조성물
JP2013118347A (ja) * 2010-12-28 2013-06-13 Central Glass Co Ltd ウェハの洗浄方法
JP5611884B2 (ja) * 2011-04-14 2014-10-22 東京エレクトロン株式会社 エッチング方法、エッチング装置および記憶媒体
JP5816488B2 (ja) * 2011-08-26 2015-11-18 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP6189830B2 (ja) * 2012-04-19 2017-08-30 株式会社きもと ガラスマスク用熱硬化型保護液及びガラスマスク
JP5728517B2 (ja) * 2013-04-02 2015-06-03 富士フイルム株式会社 化学増幅型レジスト膜のパターニング用有機系処理液の製造方法、パターン形成方法、及び、電子デバイスの製造方法
CN103293859A (zh) * 2013-05-27 2013-09-11 苏州扬清芯片科技有限公司 光刻胶薄膜的制作方法
CN107077072B (zh) * 2014-11-19 2021-05-25 日产化学工业株式会社 能够湿式除去的含有硅的抗蚀剂下层膜形成用组合物
JP6916731B2 (ja) * 2017-12-28 2021-08-11 東京応化工業株式会社 基板の撥水化方法、表面処理剤、及び基板表面を洗浄液により洗浄する際の有機パターン又は無機パターンの倒れを抑制する方法
KR102177417B1 (ko) * 2017-12-31 2020-11-11 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 포토레지스트 조성물 및 방법
US20200339611A1 (en) * 2018-02-13 2020-10-29 Central Glass Company, Limited Water-repellent protective film-forming agent, water-repellent protective film-forming chemical solution, and wafer surface treatment method
JP7297878B2 (ja) * 2018-10-01 2023-06-26 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置におけるオブジェクト
JP7162541B2 (ja) * 2019-01-22 2022-10-28 東京エレクトロン株式会社 基板処理装置、及び基板処理方法、及び記憶媒体

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005118660A (ja) * 2003-10-16 2005-05-12 Seiko Epson Corp 撥液領域の形成方法およびパターン形成方法並びに電子デバイス
JP2005197469A (ja) * 2004-01-07 2005-07-21 Tokyo Electron Ltd 塗布・現像装置及び塗布・現像方法
JP2007258217A (ja) * 2006-03-20 2007-10-04 Toppan Printing Co Ltd 印刷方法
JP2008235542A (ja) * 2007-03-20 2008-10-02 Dainippon Printing Co Ltd 液浸リソグラフィ用ウェハおよびその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005118660A (ja) * 2003-10-16 2005-05-12 Seiko Epson Corp 撥液領域の形成方法およびパターン形成方法並びに電子デバイス
JP2005197469A (ja) * 2004-01-07 2005-07-21 Tokyo Electron Ltd 塗布・現像装置及び塗布・現像方法
JP2007258217A (ja) * 2006-03-20 2007-10-04 Toppan Printing Co Ltd 印刷方法
JP2008235542A (ja) * 2007-03-20 2008-10-02 Dainippon Printing Co Ltd 液浸リソグラフィ用ウェハおよびその製造方法

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US8114568B2 (en) 2007-11-06 2012-02-14 Amsl Netherlands B.V. Method of preparing a substrate for lithography, a substrate, a device manufacturing method, a sealing coating applicator and a sealing coating measurement apparatus
US8394572B2 (en) 2007-11-06 2013-03-12 Asml Netherlands B.V. Method of preparing a substrate for lithography, a substrate, a device manufacturing method, a sealing coating applicator and a sealing coating measurement apparatus
JP2009117832A (ja) * 2007-11-06 2009-05-28 Asml Netherlands Bv リソグラフィの基板を準備する方法、基板、デバイス製造方法、密封コーティングアプリケータ及び密封コーティング測定装置
JP2010135428A (ja) * 2008-12-02 2010-06-17 Toshiba Corp 基板保持部材及び半導体装置の製造方法
US9053924B2 (en) 2008-12-26 2015-06-09 Central Glass Company, Limited Cleaning agent for silicon wafer
US9281178B2 (en) 2008-12-26 2016-03-08 Central Glass Company, Limited Cleaning agent for silicon wafer
WO2010123001A1 (ja) * 2009-04-24 2010-10-28 セントラル硝子株式会社 シリコンウェハ用洗浄剤
JP2010272852A (ja) * 2009-04-24 2010-12-02 Central Glass Co Ltd シリコンウェハ用洗浄剤
JP2011009537A (ja) * 2009-06-26 2011-01-13 Tokyo Electron Ltd 液処理装置、液処理方法および記憶媒体
US8617656B2 (en) 2009-06-26 2013-12-31 Tokyo Electron Limited Liquid processing apparatus, liquid processing method, and storage medium
KR101421494B1 (ko) 2009-06-26 2014-07-22 도쿄엘렉트론가부시키가이샤 액처리 장치, 액처리 방법 및 기억 매체
JP2011129585A (ja) * 2009-12-15 2011-06-30 Toshiba Corp 半導体基板の表面処理装置及び方法
JP2011233758A (ja) * 2010-04-28 2011-11-17 Tokyo Electron Ltd 基板処理方法
US9691603B2 (en) 2010-05-19 2017-06-27 Central Glass Company, Limited Chemical for forming protective film
JP2012033873A (ja) * 2010-05-19 2012-02-16 Central Glass Co Ltd 保護膜形成用薬液
KR101483484B1 (ko) 2010-05-19 2015-01-16 샌트랄 글래스 컴퍼니 리미티드 보호막 형성용 약액
WO2011145500A1 (ja) * 2010-05-19 2011-11-24 セントラル硝子株式会社 保護膜形成用薬液
JP2016036038A (ja) * 2010-06-07 2016-03-17 セントラル硝子株式会社 保護膜形成用薬液
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US9005703B2 (en) 2010-08-20 2015-04-14 SCREEN Holdings Co., Ltd. Substrate processing method
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JP2013108044A (ja) * 2011-10-28 2013-06-06 Central Glass Co Ltd 保護膜形成用薬液の調製方法
WO2013080832A1 (ja) * 2011-11-29 2013-06-06 セントラル硝子株式会社 保護膜形成用薬液の調製方法
WO2013115021A1 (ja) * 2012-02-01 2013-08-08 セントラル硝子株式会社 撥水性保護膜形成用薬液、撥水性保護膜形成用薬液キット、及びウェハの洗浄方法
JP2015079992A (ja) * 2014-12-22 2015-04-23 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
US9711344B2 (en) 2015-02-24 2017-07-18 Renesas Electronics Corporation Semiconductor device manufacturing method using a multilayer resist
CN111630634A (zh) * 2018-01-30 2020-09-04 株式会社斯库林集团 处理液吐出配管以及基板处理装置
WO2020105340A1 (ja) * 2018-11-22 2020-05-28 セントラル硝子株式会社 ベベル部処理剤組成物およびウェハの製造方法
KR20210092297A (ko) * 2018-11-22 2021-07-23 샌트랄 글래스 컴퍼니 리미티드 베벨부 처리제 조성물 및 웨이퍼의 제조 방법
JPWO2020105340A1 (ja) * 2018-11-22 2021-10-07 セントラル硝子株式会社 ベベル部処理剤組成物およびウェハの製造方法
JP7328564B2 (ja) 2018-11-22 2023-08-17 セントラル硝子株式会社 ベベル部処理剤組成物およびウェハの製造方法
US11817310B2 (en) 2018-11-22 2023-11-14 Central Glass Company, Limited Bevel portion treatment agent composition and method of manufacturing wafer
KR102861672B1 (ko) * 2018-11-22 2025-09-18 샌트랄 글래스 컴퍼니 리미티드 베벨부 처리제 조성물 및 웨이퍼의 제조 방법
CN115699259A (zh) * 2020-05-21 2023-02-03 中央硝子株式会社 半导体基板的表面处理方法及表面处理剂组合物
CN113823549A (zh) * 2020-06-19 2021-12-21 中国科学院微电子研究所 半导体结构的制造方法
CN113823549B (zh) * 2020-06-19 2025-01-21 中国科学院微电子研究所 半导体结构的制造方法
CN118483879A (zh) * 2024-06-03 2024-08-13 浙江大学 基于有机介质的ic光刻设备浸没边界流场收束及撤除方法

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