TW200845128A - Method of forming resist pattern and semiconductor device manufactured with the same - Google Patents

Method of forming resist pattern and semiconductor device manufactured with the same Download PDF

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Publication number
TW200845128A
TW200845128A TW097110930A TW97110930A TW200845128A TW 200845128 A TW200845128 A TW 200845128A TW 097110930 A TW097110930 A TW 097110930A TW 97110930 A TW97110930 A TW 97110930A TW 200845128 A TW200845128 A TW 200845128A
Authority
TW
Taiwan
Prior art keywords
water
substrate
agent
film
liquid
Prior art date
Application number
TW097110930A
Other languages
English (en)
Chinese (zh)
Inventor
Takeo Ishibashi
Mamoru Terai
Takuya Hagiwara
Atsumi Yamaguchi
Original Assignee
Renesas Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Tech Corp filed Critical Renesas Tech Corp
Publication of TW200845128A publication Critical patent/TW200845128A/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
TW097110930A 2007-03-30 2008-03-27 Method of forming resist pattern and semiconductor device manufactured with the same TW200845128A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007094042 2007-03-30
JP2008021604A JP2008277748A (ja) 2007-03-30 2008-01-31 レジストパターンの形成方法とその方法により製造した半導体デバイス

Publications (1)

Publication Number Publication Date
TW200845128A true TW200845128A (en) 2008-11-16

Family

ID=39995700

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097110930A TW200845128A (en) 2007-03-30 2008-03-27 Method of forming resist pattern and semiconductor device manufactured with the same

Country Status (4)

Country Link
JP (1) JP2008277748A (https=)
KR (1) KR20080089296A (https=)
CN (1) CN101276158A (https=)
TW (1) TW200845128A (https=)

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TWI460263B (zh) * 2010-05-19 2014-11-11 中央硝子股份有限公司 Protective film forming liquid
TWI484578B (zh) * 2010-12-27 2015-05-11 東京威力科創股份有限公司 A substrate liquid processing apparatus and a substrate liquid processing method, and a computer-readable recording medium on which a substrate liquid processing program is recorded
TWI566272B (zh) * 2011-08-26 2017-01-11 瑞薩電子股份有限公司 半導體裝置之製造方法

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JP2009117832A (ja) * 2007-11-06 2009-05-28 Asml Netherlands Bv リソグラフィの基板を準備する方法、基板、デバイス製造方法、密封コーティングアプリケータ及び密封コーティング測定装置
JP2010135428A (ja) * 2008-12-02 2010-06-17 Toshiba Corp 基板保持部材及び半導体装置の製造方法
JP5533178B2 (ja) * 2009-04-24 2014-06-25 セントラル硝子株式会社 シリコンウェハ用洗浄剤
US9053924B2 (en) 2008-12-26 2015-06-09 Central Glass Company, Limited Cleaning agent for silicon wafer
JP5242508B2 (ja) 2009-06-26 2013-07-24 東京エレクトロン株式会社 液処理装置、液処理方法および記憶媒体
KR20110018030A (ko) * 2009-08-17 2011-02-23 주식회사 동진쎄미켐 잉크조성물
JP5404364B2 (ja) * 2009-12-15 2014-01-29 株式会社東芝 半導体基板の表面処理装置及び方法
JP5501085B2 (ja) * 2010-04-28 2014-05-21 東京エレクトロン株式会社 基板処理方法
WO2011155407A1 (ja) * 2010-06-07 2011-12-15 セントラル硝子株式会社 保護膜形成用薬液
US9228120B2 (en) 2010-06-07 2016-01-05 Central Glass Company, Limited Liquid chemical for forming protecting film
JP5712670B2 (ja) * 2011-02-25 2015-05-07 セントラル硝子株式会社 撥水性保護膜形成薬液
WO2012002243A1 (ja) * 2010-06-28 2012-01-05 セントラル硝子株式会社 撥水性保護膜形成剤、撥水性保護膜形成用薬液と該薬液を用いたウェハの洗浄方法
JP5716527B2 (ja) * 2010-06-28 2015-05-13 セントラル硝子株式会社 撥水性保護膜形成用薬液と該薬液を用いたウェハの洗浄方法
KR101572583B1 (ko) * 2010-06-28 2015-11-30 샌트랄 글래스 컴퍼니 리미티드 발수성 보호막 형성제, 발수성 보호막 형성용 약액과 당해 약액을 이용한 웨이퍼의 세정 방법
WO2012002200A1 (ja) * 2010-06-30 2012-01-05 セントラル硝子株式会社 ウェハの洗浄方法
JP5678720B2 (ja) * 2011-02-25 2015-03-04 セントラル硝子株式会社 ウェハの洗浄方法
KR101396271B1 (ko) * 2010-06-30 2014-05-16 샌트랄 글래스 컴퍼니 리미티드 웨이퍼의 세정방법
JP2012033880A (ja) * 2010-06-30 2012-02-16 Central Glass Co Ltd 撥水性保護膜形成用薬液
KR101266620B1 (ko) 2010-08-20 2013-05-22 다이닛뽕스크린 세이조오 가부시키가이샤 기판처리방법 및 기판처리장치
JP5662081B2 (ja) * 2010-08-20 2015-01-28 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP2013118347A (ja) * 2010-12-28 2013-06-13 Central Glass Co Ltd ウェハの洗浄方法
JP5611884B2 (ja) * 2011-04-14 2014-10-22 東京エレクトロン株式会社 エッチング方法、エッチング装置および記憶媒体
JP5953721B2 (ja) * 2011-10-28 2016-07-20 セントラル硝子株式会社 保護膜形成用薬液の調製方法
JP6213616B2 (ja) * 2011-10-28 2017-10-18 セントラル硝子株式会社 保護膜形成用薬液の調製方法
WO2013115021A1 (ja) * 2012-02-01 2013-08-08 セントラル硝子株式会社 撥水性保護膜形成用薬液、撥水性保護膜形成用薬液キット、及びウェハの洗浄方法
JP6189830B2 (ja) * 2012-04-19 2017-08-30 株式会社きもと ガラスマスク用熱硬化型保護液及びガラスマスク
JP5728517B2 (ja) * 2013-04-02 2015-06-03 富士フイルム株式会社 化学増幅型レジスト膜のパターニング用有機系処理液の製造方法、パターン形成方法、及び、電子デバイスの製造方法
CN103293859A (zh) * 2013-05-27 2013-09-11 苏州扬清芯片科技有限公司 光刻胶薄膜的制作方法
CN107077072B (zh) * 2014-11-19 2021-05-25 日产化学工业株式会社 能够湿式除去的含有硅的抗蚀剂下层膜形成用组合物
JP6118309B2 (ja) * 2014-12-22 2017-04-19 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
JP2016157779A (ja) 2015-02-24 2016-09-01 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP6916731B2 (ja) * 2017-12-28 2021-08-11 東京応化工業株式会社 基板の撥水化方法、表面処理剤、及び基板表面を洗浄液により洗浄する際の有機パターン又は無機パターンの倒れを抑制する方法
KR102177417B1 (ko) * 2017-12-31 2020-11-11 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 포토레지스트 조성물 및 방법
JP7000177B2 (ja) * 2018-01-30 2022-01-19 株式会社Ｓｃｒｅｅｎホールディングス 処理液吐出配管および基板処理装置
US20200339611A1 (en) * 2018-02-13 2020-10-29 Central Glass Company, Limited Water-repellent protective film-forming agent, water-repellent protective film-forming chemical solution, and wafer surface treatment method
JP7297878B2 (ja) * 2018-10-01 2023-06-26 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置におけるオブジェクト
CN113169060B (zh) * 2018-11-22 2025-04-01 中央硝子株式会社 倒角部处理剂组合物和晶圆的制造方法
JP7162541B2 (ja) * 2019-01-22 2022-10-28 東京エレクトロン株式会社 基板処理装置、及び基板処理方法、及び記憶媒体
KR20230015959A (ko) * 2020-05-21 2023-01-31 샌트랄 글래스 컴퍼니 리미티드 반도체 기판의 표면 처리 방법, 및 표면처리제 조성물
CN113823549B (zh) * 2020-06-19 2025-01-21 中国科学院微电子研究所 半导体结构的制造方法
CN118483879B (zh) * 2024-06-03 2025-03-14 浙江大学 基于有机介质的ic光刻设备浸没边界流场收束及撤除方法

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JP2005118660A (ja) * 2003-10-16 2005-05-12 Seiko Epson Corp 撥液領域の形成方法およびパターン形成方法並びに電子デバイス
JP4194495B2 (ja) * 2004-01-07 2008-12-10 東京エレクトロン株式会社 塗布・現像装置
JP2007258217A (ja) * 2006-03-20 2007-10-04 Toppan Printing Co Ltd 印刷方法
JP2008235542A (ja) * 2007-03-20 2008-10-02 Dainippon Printing Co Ltd 液浸リソグラフィ用ウェハおよびその製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI460263B (zh) * 2010-05-19 2014-11-11 中央硝子股份有限公司 Protective film forming liquid
TWI484578B (zh) * 2010-12-27 2015-05-11 東京威力科創股份有限公司 A substrate liquid processing apparatus and a substrate liquid processing method, and a computer-readable recording medium on which a substrate liquid processing program is recorded
TWI566272B (zh) * 2011-08-26 2017-01-11 瑞薩電子股份有限公司 半導體裝置之製造方法

Also Published As

Publication number Publication date
CN101276158A (zh) 2008-10-01
JP2008277748A (ja) 2008-11-13
KR20080089296A (ko) 2008-10-06

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