JP2008277530A5 - - Google Patents
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- Publication number
- JP2008277530A5 JP2008277530A5 JP2007119122A JP2007119122A JP2008277530A5 JP 2008277530 A5 JP2008277530 A5 JP 2008277530A5 JP 2007119122 A JP2007119122 A JP 2007119122A JP 2007119122 A JP2007119122 A JP 2007119122A JP 2008277530 A5 JP2008277530 A5 JP 2008277530A5
- Authority
- JP
- Japan
- Prior art keywords
- memory device
- semiconductor memory
- nitride film
- nonvolatile semiconductor
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 50
- 150000004767 nitrides Chemical class 0.000 claims 24
- 239000000758 substrate Substances 0.000 claims 16
- 229910052581 Si3N4 Inorganic materials 0.000 claims 4
- 229910052736 halogen Inorganic materials 0.000 claims 4
- 150000002367 halogens Chemical class 0.000 claims 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 239000000969 carrier Substances 0.000 claims 2
- 229910052731 fluorine Inorganic materials 0.000 claims 2
- 239000011737 fluorine Substances 0.000 claims 2
- 125000001153 fluoro group Chemical group F* 0.000 claims 2
- 238000005121 nitriding Methods 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 229910003902 SiCl 4 Inorganic materials 0.000 claims 1
- 238000000231 atomic layer deposition Methods 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 229910001873 dinitrogen Inorganic materials 0.000 claims 1
- 238000002347 injection Methods 0.000 claims 1
- 239000007924 injection Substances 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007119122A JP2008277530A (ja) | 2007-04-27 | 2007-04-27 | 不揮発性半導体記憶装置 |
| TW097109686A TW200908342A (en) | 2007-04-27 | 2008-03-19 | Nonvolatile semiconductor memory device |
| KR1020080033183A KR100998106B1 (ko) | 2007-04-27 | 2008-04-10 | 불휘발성 반도체 기억 장치 |
| US12/109,340 US8063433B2 (en) | 2007-04-27 | 2008-04-24 | Nonvolatile semiconductor memory device |
| CN2008100953115A CN101295735B (zh) | 2007-04-27 | 2008-04-25 | 非易失性半导体存储器件 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007119122A JP2008277530A (ja) | 2007-04-27 | 2007-04-27 | 不揮発性半導体記憶装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008277530A JP2008277530A (ja) | 2008-11-13 |
| JP2008277530A5 true JP2008277530A5 (enExample) | 2010-04-22 |
Family
ID=39885897
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007119122A Pending JP2008277530A (ja) | 2007-04-27 | 2007-04-27 | 不揮発性半導体記憶装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8063433B2 (enExample) |
| JP (1) | JP2008277530A (enExample) |
| KR (1) | KR100998106B1 (enExample) |
| CN (1) | CN101295735B (enExample) |
| TW (1) | TW200908342A (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4659527B2 (ja) * | 2005-06-20 | 2011-03-30 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP5230274B2 (ja) | 2008-06-02 | 2013-07-10 | 株式会社東芝 | 不揮発性半導体記憶装置 |
| WO2010050204A1 (ja) | 2008-10-29 | 2010-05-06 | 株式会社岡村製作所 | 椅子の背凭れ |
| US8692310B2 (en) | 2009-02-09 | 2014-04-08 | Spansion Llc | Gate fringing effect based channel formation for semiconductor device |
| JP2011077323A (ja) * | 2009-09-30 | 2011-04-14 | Tokyo Electron Ltd | 窒化珪素膜の成膜方法および半導体メモリ装置の製造方法 |
| WO2011102233A1 (en) * | 2010-02-19 | 2011-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US8951864B2 (en) * | 2012-02-13 | 2015-02-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Split-gate device and method of fabricating the same |
| US9466496B2 (en) * | 2013-10-11 | 2016-10-11 | Cypress Semiconductor Corporation | Spacer formation with straight sidewall |
| CN104404476A (zh) * | 2014-12-10 | 2015-03-11 | 中国电子科技集团公司第四十七研究所 | 低压气相淀积Si3N4薄膜的制备方法 |
| TWI548000B (zh) * | 2014-12-22 | 2016-09-01 | 力晶科技股份有限公司 | 半導體元件及其製作方法 |
| JP6890003B2 (ja) * | 2016-11-29 | 2021-06-18 | 株式会社ジャパンディスプレイ | 表示装置 |
| US10304848B2 (en) | 2017-09-01 | 2019-05-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Flash memory structure with reduced dimension of gate structure |
| JP2021034650A (ja) * | 2019-08-28 | 2021-03-01 | キオクシア株式会社 | 半導体記憶装置 |
| JP2021044426A (ja) * | 2019-09-12 | 2021-03-18 | キオクシア株式会社 | 半導体記憶装置 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR920006736B1 (ko) * | 1989-11-08 | 1992-08-17 | 삼성전자 주식회사 | 반도체장치 및 그 제조방법 |
| JPH0773685A (ja) | 1993-09-06 | 1995-03-17 | Hitachi Ltd | 半導体不揮発性記憶装置 |
| JP4151229B2 (ja) * | 2000-10-26 | 2008-09-17 | ソニー株式会社 | 不揮発性半導体記憶装置およびその製造方法 |
| US6794764B1 (en) * | 2003-03-05 | 2004-09-21 | Advanced Micro Devices, Inc. | Charge-trapping memory arrays resistant to damage from contact hole information |
| JP2004356562A (ja) | 2003-05-30 | 2004-12-16 | Renesas Technology Corp | 半導体装置の製造方法および半導体装置 |
| US6992370B1 (en) * | 2003-09-04 | 2006-01-31 | Advanced Micro Devices, Inc. | Memory cell structure having nitride layer with reduced charge loss and method for fabricating same |
| KR100539158B1 (ko) | 2004-04-20 | 2005-12-26 | 주식회사 하이닉스반도체 | 플래쉬 메모리 소자의 게이트간 유전막 형성 방법 |
| JP4951861B2 (ja) * | 2004-09-29 | 2012-06-13 | ソニー株式会社 | 不揮発性メモリデバイスおよびその製造方法 |
| JP2006319082A (ja) * | 2005-05-12 | 2006-11-24 | Sony Corp | 不揮発性半導体メモリデバイス |
-
2007
- 2007-04-27 JP JP2007119122A patent/JP2008277530A/ja active Pending
-
2008
- 2008-03-19 TW TW097109686A patent/TW200908342A/zh unknown
- 2008-04-10 KR KR1020080033183A patent/KR100998106B1/ko not_active Expired - Fee Related
- 2008-04-24 US US12/109,340 patent/US8063433B2/en not_active Expired - Fee Related
- 2008-04-25 CN CN2008100953115A patent/CN101295735B/zh not_active Expired - Fee Related
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