TW200908342A - Nonvolatile semiconductor memory device - Google Patents
Nonvolatile semiconductor memory device Download PDFInfo
- Publication number
- TW200908342A TW200908342A TW097109686A TW97109686A TW200908342A TW 200908342 A TW200908342 A TW 200908342A TW 097109686 A TW097109686 A TW 097109686A TW 97109686 A TW97109686 A TW 97109686A TW 200908342 A TW200908342 A TW 200908342A
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- nitride film
- memory device
- semiconductor memory
- region
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 78
- 150000004767 nitrides Chemical class 0.000 claims description 68
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 66
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 63
- 239000000758 substrate Substances 0.000 claims description 60
- 238000003860 storage Methods 0.000 claims description 43
- 238000000034 method Methods 0.000 claims description 41
- 229910052757 nitrogen Inorganic materials 0.000 claims description 33
- 238000005121 nitriding Methods 0.000 claims description 16
- 238000000231 atomic layer deposition Methods 0.000 claims description 8
- 230000003647 oxidation Effects 0.000 claims description 7
- 238000007254 oxidation reaction Methods 0.000 claims description 7
- 239000011737 fluorine Substances 0.000 claims description 6
- 229910052731 fluorine Inorganic materials 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 239000004575 stone Substances 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 4
- 229910052736 halogen Inorganic materials 0.000 claims description 4
- 150000002367 halogens Chemical class 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 3
- 238000004611 spectroscopical analysis Methods 0.000 claims description 2
- 125000001153 fluoro group Chemical group F* 0.000 claims 2
- 229910003910 SiCl4 Inorganic materials 0.000 claims 1
- 238000007599 discharging Methods 0.000 claims 1
- 229910052746 lanthanum Inorganic materials 0.000 claims 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
- 238000002347 injection Methods 0.000 abstract description 27
- 239000007924 injection Substances 0.000 abstract description 27
- 101710117542 Botulinum neurotoxin type A Proteins 0.000 abstract description 12
- 229940089093 botox Drugs 0.000 abstract description 12
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 3
- 239000010408 film Substances 0.000 description 239
- 239000001257 hydrogen Substances 0.000 description 105
- 229910052739 hydrogen Inorganic materials 0.000 description 105
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 97
- 230000014759 maintenance of location Effects 0.000 description 52
- 239000007789 gas Substances 0.000 description 30
- 230000006866 deterioration Effects 0.000 description 27
- 230000000694 effects Effects 0.000 description 21
- 239000010410 layer Substances 0.000 description 19
- 239000002784 hot electron Substances 0.000 description 15
- 238000009792 diffusion process Methods 0.000 description 14
- 239000012535 impurity Substances 0.000 description 14
- 238000005755 formation reaction Methods 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 12
- 230000009467 reduction Effects 0.000 description 11
- 229910052707 ruthenium Inorganic materials 0.000 description 11
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 10
- 238000006731 degradation reaction Methods 0.000 description 10
- 229910052732 germanium Inorganic materials 0.000 description 10
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 10
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 8
- 108091006146 Channels Proteins 0.000 description 8
- 230000009471 action Effects 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 8
- 150000002431 hydrogen Chemical class 0.000 description 7
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 7
- 230000005641 tunneling Effects 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- DYCJFJRCWPVDHY-LSCFUAHRSA-N NBMPR Chemical compound O[C@@H]1[C@H](O)[C@@H](CO)O[C@H]1N1C2=NC=NC(SCC=3C=CC(=CC=3)[N+]([O-])=O)=C2N=C1 DYCJFJRCWPVDHY-LSCFUAHRSA-N 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 5
- -1 metal oxide nitride Chemical class 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 125000006850 spacer group Chemical group 0.000 description 5
- NCGICGYLBXGBGN-UHFFFAOYSA-N 3-morpholin-4-yl-1-oxa-3-azonia-2-azanidacyclopent-3-en-5-imine;hydrochloride Chemical compound Cl.[N-]1OC(=N)C=[N+]1N1CCOCC1 NCGICGYLBXGBGN-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- 230000033228 biological regulation Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000001105 regulatory effect Effects 0.000 description 4
- 101100421779 Arabidopsis thaliana SNL3 gene Proteins 0.000 description 3
- 101100042631 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) SIN3 gene Proteins 0.000 description 3
- 102100034272 Sacsin Human genes 0.000 description 3
- 101710102928 Sacsin Proteins 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000000839 emulsion Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 238000007667 floating Methods 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 2
- 101150089655 Ins2 gene Proteins 0.000 description 2
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 2
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 2
- IOVCWXUNBOPUCH-UHFFFAOYSA-M Nitrite anion Chemical compound [O-]N=O IOVCWXUNBOPUCH-UHFFFAOYSA-M 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910008284 Si—F Inorganic materials 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- OSVXSBDYLRYLIG-UHFFFAOYSA-N dioxidochlorine(.) Chemical compound O=Cl=O OSVXSBDYLRYLIG-UHFFFAOYSA-N 0.000 description 2
- 235000013399 edible fruits Nutrition 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 2
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 101100179824 Caenorhabditis elegans ins-17 gene Proteins 0.000 description 1
- 101100042630 Caenorhabditis elegans sin-3 gene Proteins 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004155 Chlorine dioxide Substances 0.000 description 1
- UFHFLCQGNIYNRP-VVKOMZTBSA-N Dideuterium Chemical compound [2H][2H] UFHFLCQGNIYNRP-VVKOMZTBSA-N 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- 206010036790 Productive cough Diseases 0.000 description 1
- 241000239226 Scorpiones Species 0.000 description 1
- 229910003818 SiH2Cl2 Inorganic materials 0.000 description 1
- YZCKVEUIGOORGS-NJFSPNSNSA-N Tritium Chemical compound [3H] YZCKVEUIGOORGS-NJFSPNSNSA-N 0.000 description 1
- 101100072652 Xenopus laevis ins-b gene Proteins 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- LPQOADBMXVRBNX-UHFFFAOYSA-N ac1ldcw0 Chemical compound Cl.C1CN(C)CCN1C1=C(F)C=C2C(=O)C(C(O)=O)=CN3CCSC1=C32 LPQOADBMXVRBNX-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 description 1
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 210000000746 body region Anatomy 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 235000019398 chlorine dioxide Nutrition 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000008029 eradication Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000004992 fission Effects 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- VHHHONWQHHHLTI-UHFFFAOYSA-N hexachloroethane Chemical compound ClC(Cl)(Cl)C(Cl)(Cl)Cl VHHHONWQHHHLTI-UHFFFAOYSA-N 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 150000002829 nitrogen Chemical class 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- FTIMWVSQXCWTAW-UHFFFAOYSA-N ruthenium Chemical compound [Ru].[Ru] FTIMWVSQXCWTAW-UHFFFAOYSA-N 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 210000003802 sputum Anatomy 0.000 description 1
- 208000024794 sputum Diseases 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- FCLAPXQWWIRXCV-UHFFFAOYSA-J tetrachloroniobium Chemical compound Cl[Nb](Cl)(Cl)Cl FCLAPXQWWIRXCV-UHFFFAOYSA-J 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
- H10D30/694—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/696—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes having at least one additional gate, e.g. program gate, erase gate or select gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/031—Manufacture or treatment of data-storage electrodes
- H10D64/037—Manufacture or treatment of data-storage electrodes comprising charge-trapping insulators
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
- H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
- H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0156—Manufacturing their doped wells
Landscapes
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007119122A JP2008277530A (ja) | 2007-04-27 | 2007-04-27 | 不揮発性半導体記憶装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200908342A true TW200908342A (en) | 2009-02-16 |
Family
ID=39885897
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097109686A TW200908342A (en) | 2007-04-27 | 2008-03-19 | Nonvolatile semiconductor memory device |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8063433B2 (enExample) |
| JP (1) | JP2008277530A (enExample) |
| KR (1) | KR100998106B1 (enExample) |
| CN (1) | CN101295735B (enExample) |
| TW (1) | TW200908342A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI548000B (zh) * | 2014-12-22 | 2016-09-01 | 力晶科技股份有限公司 | 半導體元件及其製作方法 |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4659527B2 (ja) * | 2005-06-20 | 2011-03-30 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP5230274B2 (ja) | 2008-06-02 | 2013-07-10 | 株式会社東芝 | 不揮発性半導体記憶装置 |
| WO2010050204A1 (ja) | 2008-10-29 | 2010-05-06 | 株式会社岡村製作所 | 椅子の背凭れ |
| US8692310B2 (en) | 2009-02-09 | 2014-04-08 | Spansion Llc | Gate fringing effect based channel formation for semiconductor device |
| JP2011077323A (ja) * | 2009-09-30 | 2011-04-14 | Tokyo Electron Ltd | 窒化珪素膜の成膜方法および半導体メモリ装置の製造方法 |
| WO2011102233A1 (en) * | 2010-02-19 | 2011-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US8951864B2 (en) * | 2012-02-13 | 2015-02-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Split-gate device and method of fabricating the same |
| US9466496B2 (en) * | 2013-10-11 | 2016-10-11 | Cypress Semiconductor Corporation | Spacer formation with straight sidewall |
| CN104404476A (zh) * | 2014-12-10 | 2015-03-11 | 中国电子科技集团公司第四十七研究所 | 低压气相淀积Si3N4薄膜的制备方法 |
| JP6890003B2 (ja) * | 2016-11-29 | 2021-06-18 | 株式会社ジャパンディスプレイ | 表示装置 |
| US10304848B2 (en) | 2017-09-01 | 2019-05-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Flash memory structure with reduced dimension of gate structure |
| JP2021034650A (ja) * | 2019-08-28 | 2021-03-01 | キオクシア株式会社 | 半導体記憶装置 |
| JP2021044426A (ja) * | 2019-09-12 | 2021-03-18 | キオクシア株式会社 | 半導体記憶装置 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR920006736B1 (ko) * | 1989-11-08 | 1992-08-17 | 삼성전자 주식회사 | 반도체장치 및 그 제조방법 |
| JPH0773685A (ja) | 1993-09-06 | 1995-03-17 | Hitachi Ltd | 半導体不揮発性記憶装置 |
| JP4151229B2 (ja) * | 2000-10-26 | 2008-09-17 | ソニー株式会社 | 不揮発性半導体記憶装置およびその製造方法 |
| US6794764B1 (en) * | 2003-03-05 | 2004-09-21 | Advanced Micro Devices, Inc. | Charge-trapping memory arrays resistant to damage from contact hole information |
| JP2004356562A (ja) | 2003-05-30 | 2004-12-16 | Renesas Technology Corp | 半導体装置の製造方法および半導体装置 |
| US6992370B1 (en) * | 2003-09-04 | 2006-01-31 | Advanced Micro Devices, Inc. | Memory cell structure having nitride layer with reduced charge loss and method for fabricating same |
| KR100539158B1 (ko) | 2004-04-20 | 2005-12-26 | 주식회사 하이닉스반도체 | 플래쉬 메모리 소자의 게이트간 유전막 형성 방법 |
| JP4951861B2 (ja) * | 2004-09-29 | 2012-06-13 | ソニー株式会社 | 不揮発性メモリデバイスおよびその製造方法 |
| JP2006319082A (ja) * | 2005-05-12 | 2006-11-24 | Sony Corp | 不揮発性半導体メモリデバイス |
-
2007
- 2007-04-27 JP JP2007119122A patent/JP2008277530A/ja active Pending
-
2008
- 2008-03-19 TW TW097109686A patent/TW200908342A/zh unknown
- 2008-04-10 KR KR1020080033183A patent/KR100998106B1/ko not_active Expired - Fee Related
- 2008-04-24 US US12/109,340 patent/US8063433B2/en not_active Expired - Fee Related
- 2008-04-25 CN CN2008100953115A patent/CN101295735B/zh not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI548000B (zh) * | 2014-12-22 | 2016-09-01 | 力晶科技股份有限公司 | 半導體元件及其製作方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US8063433B2 (en) | 2011-11-22 |
| CN101295735A (zh) | 2008-10-29 |
| KR100998106B1 (ko) | 2010-12-02 |
| KR20080096388A (ko) | 2008-10-30 |
| US20080265286A1 (en) | 2008-10-30 |
| CN101295735B (zh) | 2010-09-08 |
| JP2008277530A (ja) | 2008-11-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW200908342A (en) | Nonvolatile semiconductor memory device | |
| TWI358834B (enExample) | ||
| TW561513B (en) | Semiconductor device and method of manufacturing the same | |
| JP4151229B2 (ja) | 不揮発性半導体記憶装置およびその製造方法 | |
| CN101814507B (zh) | 空乏模式的电荷捕捉快闪装置 | |
| JP5878797B2 (ja) | 半導体装置およびその製造方法 | |
| JP5007017B2 (ja) | 半導体装置の製造方法 | |
| US9722096B2 (en) | Method of manufacturing semiconductor device | |
| JP5336872B2 (ja) | 不揮発性半導体記憶装置及びその製造方法 | |
| TWI296440B (en) | Nov-volatile memory and method of forming thereof | |
| JP2010183022A (ja) | 半導体装置およびその製造方法 | |
| TW200816496A (en) | Semiconductor device and manufacturing method of the same | |
| US20070269972A1 (en) | Method of manufacturing a semiconductor device | |
| JP4792620B2 (ja) | 不揮発性半導体記憶装置およびその製造方法 | |
| US10192879B2 (en) | Semiconductor device and manufacturing method thereof | |
| KR100587670B1 (ko) | 비휘발성 메모리 셀의 유전막 형성방법 | |
| KR20090080912A (ko) | 반도체 장치 및 그 제조 방법 | |
| JP2002261175A (ja) | 不揮発性半導体記憶装置およびその製造方法 | |
| JP2004221448A (ja) | 不揮発性半導体記憶装置およびその製造方法 | |
| JP2002289708A (ja) | 不揮発性半導体記憶装置およびその製造方法 | |
| TWI758462B (zh) | 半導體裝置之製造方法 | |
| KR100905276B1 (ko) | 다층 터널 절연막을 포함하는 플래시 메모리 소자 및 그제조 방법 | |
| JP2011096772A (ja) | 半導体装置およびその製造方法 | |
| JP2016034045A (ja) | 半導体装置 | |
| US20090068850A1 (en) | Method of Fabricating Flash Memory Device |