CN101295735B - 非易失性半导体存储器件 - Google Patents

非易失性半导体存储器件 Download PDF

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Publication number
CN101295735B
CN101295735B CN2008100953115A CN200810095311A CN101295735B CN 101295735 B CN101295735 B CN 101295735B CN 2008100953115 A CN2008100953115 A CN 2008100953115A CN 200810095311 A CN200810095311 A CN 200810095311A CN 101295735 B CN101295735 B CN 101295735B
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CN
China
Prior art keywords
nitride film
film
memory device
region
silicon nitride
Prior art date
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Expired - Fee Related
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CN2008100953115A
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English (en)
Chinese (zh)
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CN101295735A (zh
Inventor
石丸哲也
岛本泰洋
峰利之
青木康伸
鸟羽功一
安井感
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Renesas Electronics Corp
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Renesas Technology Corp
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Publication date
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Publication of CN101295735A publication Critical patent/CN101295735A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/694—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/696—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes having at least one additional gate, e.g. program gate, erase gate or select gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/037—Manufacture or treatment of data-storage electrodes comprising charge-trapping insulators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0156—Manufacturing their doped wells

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  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
CN2008100953115A 2007-04-27 2008-04-25 非易失性半导体存储器件 Expired - Fee Related CN101295735B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007119122A JP2008277530A (ja) 2007-04-27 2007-04-27 不揮発性半導体記憶装置
JP2007-119122 2007-04-27

Publications (2)

Publication Number Publication Date
CN101295735A CN101295735A (zh) 2008-10-29
CN101295735B true CN101295735B (zh) 2010-09-08

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Family Applications (1)

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CN2008100953115A Expired - Fee Related CN101295735B (zh) 2007-04-27 2008-04-25 非易失性半导体存储器件

Country Status (5)

Country Link
US (1) US8063433B2 (enExample)
JP (1) JP2008277530A (enExample)
KR (1) KR100998106B1 (enExample)
CN (1) CN101295735B (enExample)
TW (1) TW200908342A (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4659527B2 (ja) * 2005-06-20 2011-03-30 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP5230274B2 (ja) 2008-06-02 2013-07-10 株式会社東芝 不揮発性半導体記憶装置
WO2010050204A1 (ja) 2008-10-29 2010-05-06 株式会社岡村製作所 椅子の背凭れ
US8692310B2 (en) 2009-02-09 2014-04-08 Spansion Llc Gate fringing effect based channel formation for semiconductor device
JP2011077323A (ja) * 2009-09-30 2011-04-14 Tokyo Electron Ltd 窒化珪素膜の成膜方法および半導体メモリ装置の製造方法
WO2011102233A1 (en) * 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8951864B2 (en) * 2012-02-13 2015-02-10 Taiwan Semiconductor Manufacturing Company, Ltd. Split-gate device and method of fabricating the same
US9466496B2 (en) * 2013-10-11 2016-10-11 Cypress Semiconductor Corporation Spacer formation with straight sidewall
CN104404476A (zh) * 2014-12-10 2015-03-11 中国电子科技集团公司第四十七研究所 低压气相淀积Si3N4薄膜的制备方法
TWI548000B (zh) * 2014-12-22 2016-09-01 力晶科技股份有限公司 半導體元件及其製作方法
JP6890003B2 (ja) * 2016-11-29 2021-06-18 株式会社ジャパンディスプレイ 表示装置
US10304848B2 (en) 2017-09-01 2019-05-28 Taiwan Semiconductor Manufacturing Co., Ltd. Flash memory structure with reduced dimension of gate structure
JP2021034650A (ja) * 2019-08-28 2021-03-01 キオクシア株式会社 半導体記憶装置
JP2021044426A (ja) * 2019-09-12 2021-03-18 キオクシア株式会社 半導体記憶装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1120231A (zh) * 1993-09-06 1996-04-10 株式会社日立制作所 半导体非易失性存储器件
CN1757114A (zh) * 2003-03-05 2006-04-05 斯班逊有限公司 电荷捕捉存储阵列

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR920006736B1 (ko) * 1989-11-08 1992-08-17 삼성전자 주식회사 반도체장치 및 그 제조방법
JP4151229B2 (ja) * 2000-10-26 2008-09-17 ソニー株式会社 不揮発性半導体記憶装置およびその製造方法
JP2004356562A (ja) 2003-05-30 2004-12-16 Renesas Technology Corp 半導体装置の製造方法および半導体装置
US6992370B1 (en) * 2003-09-04 2006-01-31 Advanced Micro Devices, Inc. Memory cell structure having nitride layer with reduced charge loss and method for fabricating same
KR100539158B1 (ko) 2004-04-20 2005-12-26 주식회사 하이닉스반도체 플래쉬 메모리 소자의 게이트간 유전막 형성 방법
JP4951861B2 (ja) * 2004-09-29 2012-06-13 ソニー株式会社 不揮発性メモリデバイスおよびその製造方法
JP2006319082A (ja) * 2005-05-12 2006-11-24 Sony Corp 不揮発性半導体メモリデバイス

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1120231A (zh) * 1993-09-06 1996-04-10 株式会社日立制作所 半导体非易失性存储器件
CN1757114A (zh) * 2003-03-05 2006-04-05 斯班逊有限公司 电荷捕捉存储阵列

Also Published As

Publication number Publication date
US8063433B2 (en) 2011-11-22
CN101295735A (zh) 2008-10-29
KR100998106B1 (ko) 2010-12-02
TW200908342A (en) 2009-02-16
KR20080096388A (ko) 2008-10-30
US20080265286A1 (en) 2008-10-30
JP2008277530A (ja) 2008-11-13

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