JP2008235886A - 改善された静電放電保護のための方法および装置 - Google Patents

改善された静電放電保護のための方法および装置 Download PDF

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Publication number
JP2008235886A
JP2008235886A JP2008057606A JP2008057606A JP2008235886A JP 2008235886 A JP2008235886 A JP 2008235886A JP 2008057606 A JP2008057606 A JP 2008057606A JP 2008057606 A JP2008057606 A JP 2008057606A JP 2008235886 A JP2008235886 A JP 2008235886A
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JP
Japan
Prior art keywords
esd
mos transistor
protection circuit
clamp
coupled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008057606A
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English (en)
Japanese (ja)
Other versions
JP2008235886A5 (enExample
Inventor
Pieter Vanysacker
ヴァニサッカー ピーター
Olivier Marichal
マリシャル オリヴィエ
Bart Sorgeloos
ソルゲルス バート
Camp Benjamin Van
ファン カンプ ベンジャミン
Bart Keppens
ケッペンス バート
Der Borght Johan Van
ファン デル ボルヘ ヨハン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sofics Bvba
Sarnoff Corp
Original Assignee
Sofics Bvba
Sarnoff Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sofics Bvba, Sarnoff Corp filed Critical Sofics Bvba
Publication of JP2008235886A publication Critical patent/JP2008235886A/ja
Publication of JP2008235886A5 publication Critical patent/JP2008235886A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

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  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2008057606A 2007-03-08 2008-03-07 改善された静電放電保護のための方法および装置 Pending JP2008235886A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US89367007P 2007-03-08 2007-03-08

Publications (2)

Publication Number Publication Date
JP2008235886A true JP2008235886A (ja) 2008-10-02
JP2008235886A5 JP2008235886A5 (enExample) 2011-04-21

Family

ID=39741383

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008057606A Pending JP2008235886A (ja) 2007-03-08 2008-03-07 改善された静電放電保護のための方法および装置

Country Status (3)

Country Link
US (1) US20080218920A1 (enExample)
JP (1) JP2008235886A (enExample)
CN (1) CN101359825A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10033177B2 (en) 2015-03-02 2018-07-24 Kabushiki Kaisha Toshiba Electrostatic protection circuit

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7679396B1 (en) * 2004-07-07 2010-03-16 Kao Richard F C High speed integrated circuit
JP2008263068A (ja) * 2007-04-12 2008-10-30 Nec Electronics Corp 静電気保護回路
US20080316660A1 (en) * 2007-06-20 2008-12-25 Ememory Technology Inc. Electrostatic discharge avoiding circuit
KR100894254B1 (ko) * 2007-11-06 2009-04-21 주식회사 실리콘웍스 전압강하가 최소화된 전원공급라인을 구비하는 반도체 칩
US20100073833A1 (en) * 2008-09-23 2010-03-25 Hao-Ping Hong Circuit apparatus having electrostatic discharge protection function
US9520486B2 (en) 2009-11-04 2016-12-13 Analog Devices, Inc. Electrostatic protection device
US10199482B2 (en) 2010-11-29 2019-02-05 Analog Devices, Inc. Apparatus for electrostatic discharge protection
US8803193B2 (en) 2011-05-11 2014-08-12 Analog Devices, Inc. Overvoltage and/or electrostatic discharge protection device
US8816389B2 (en) * 2011-10-21 2014-08-26 Analog Devices, Inc. Overvoltage and/or electrostatic discharge protection device
US8742455B2 (en) 2011-05-11 2014-06-03 Analog Devices, Inc. Apparatus for electrostatic discharge protection
US9069924B2 (en) * 2011-12-29 2015-06-30 Taiwan Semiconductor Manufacturing Co., Ltd. ESD protection circuit cell
US20140281601A1 (en) * 2013-03-14 2014-09-18 Apple Inc. Power boundary cell operation in multiple power domain integrated circuits
CN103795026B (zh) * 2014-02-28 2016-08-17 北京大学 输入级esd保护电路
US9484739B2 (en) 2014-09-25 2016-11-01 Analog Devices Global Overvoltage protection device and method
US10181719B2 (en) 2015-03-16 2019-01-15 Analog Devices Global Overvoltage blocking protection device
US9520389B1 (en) * 2015-07-07 2016-12-13 National Chiao Tung University Silicon-controlled rectifier and an ESD clamp circuit
TWI547096B (zh) * 2015-08-07 2016-08-21 敦泰電子股份有限公司 靜電放電箝位電路
CN105977938B (zh) * 2016-06-17 2018-09-25 中国电子科技集团公司第二十四研究所 芯片esd保护电路
CN106786451A (zh) * 2016-11-30 2017-05-31 北京中电华大电子设计有限责任公司 一种模拟电源域esd保护电路
US10937782B2 (en) * 2017-09-14 2021-03-02 Nxp B.V. Electrostatic discharge protection structure
EP3944317A1 (en) * 2020-07-21 2022-01-26 Nexperia B.V. An electrostatic discharge protection semiconductor structure and a method of manufacture
US12433034B2 (en) * 2021-03-26 2025-09-30 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit device and method for ESD protection
US12021077B2 (en) * 2022-03-01 2024-06-25 Nxp, B.V. Cross-domain electrostatic discharge protection
CN114784776B (zh) * 2022-04-19 2025-09-26 海光信息技术股份有限公司 静电释放钳位电路及多点同步释放静电的方法

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* Cited by examiner, † Cited by third party
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JPH0936245A (ja) * 1995-07-17 1997-02-07 Sony Corp 半導体回路装置
JP2003045992A (ja) * 2002-06-05 2003-02-14 Hitachi Ltd 半導体集積回路装置
JP2004186623A (ja) * 2002-12-06 2004-07-02 Kawasaki Microelectronics Kk 半導体回路
JP2006093598A (ja) * 2004-09-27 2006-04-06 Toshiba Corp 半導体集積回路

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JPH0837238A (ja) * 1994-07-21 1996-02-06 Hitachi Ltd 半導体集積回路装置
US5623156A (en) * 1995-09-28 1997-04-22 Cypress Semiconductor Corporation Electrostatic discharge (ESD) protection circuit and structure for output drivers
US6075686A (en) * 1997-07-09 2000-06-13 Industrial Technology Research Institute ESD protection circuit for mixed mode integrated circuits with separated power pins
US20030107424A1 (en) * 2001-12-11 2003-06-12 Chien-Chang Huang ESD protection circuit
US7253453B2 (en) * 2003-05-21 2007-08-07 Industrial Technology Research Institute Charge-device model electrostatic discharge protection using active device for CMOS circuits
US7242561B2 (en) * 2005-01-12 2007-07-10 Silicon Integrated System Corp. ESD protection unit with ability to enhance trigger-on speed of low voltage triggered PNP
JP4806540B2 (ja) * 2005-05-18 2011-11-02 ルネサスエレクトロニクス株式会社 半導体集積回路装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0936245A (ja) * 1995-07-17 1997-02-07 Sony Corp 半導体回路装置
JP2003045992A (ja) * 2002-06-05 2003-02-14 Hitachi Ltd 半導体集積回路装置
JP2004186623A (ja) * 2002-12-06 2004-07-02 Kawasaki Microelectronics Kk 半導体回路
JP2006093598A (ja) * 2004-09-27 2006-04-06 Toshiba Corp 半導体集積回路

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10033177B2 (en) 2015-03-02 2018-07-24 Kabushiki Kaisha Toshiba Electrostatic protection circuit
US10468870B2 (en) 2015-03-02 2019-11-05 Kabushiki Kaisha Toshiba Electrostatic protection circuit

Also Published As

Publication number Publication date
CN101359825A (zh) 2009-02-04
US20080218920A1 (en) 2008-09-11

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