CN101359825A - 用于改进的静电放电保护的方法和设备 - Google Patents

用于改进的静电放电保护的方法和设备 Download PDF

Info

Publication number
CN101359825A
CN101359825A CNA2008102103971A CN200810210397A CN101359825A CN 101359825 A CN101359825 A CN 101359825A CN A2008102103971 A CNA2008102103971 A CN A2008102103971A CN 200810210397 A CN200810210397 A CN 200810210397A CN 101359825 A CN101359825 A CN 101359825A
Authority
CN
China
Prior art keywords
esd
mos transistor
protection circuit
supply line
voltage supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2008102103971A
Other languages
English (en)
Chinese (zh)
Inventor
P·万萨科尔
O·马瑞查尔
B·索尔格洛斯
B·柯宾斯
J·V·D·博特
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sofics Bvba
Sarnoff Corp
Original Assignee
Sofics Bvba
Sarnoff Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sofics Bvba, Sarnoff Corp filed Critical Sofics Bvba
Publication of CN101359825A publication Critical patent/CN101359825A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CNA2008102103971A 2007-03-08 2008-03-10 用于改进的静电放电保护的方法和设备 Pending CN101359825A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US89367007P 2007-03-08 2007-03-08
US60/893,670 2007-03-08

Publications (1)

Publication Number Publication Date
CN101359825A true CN101359825A (zh) 2009-02-04

Family

ID=39741383

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2008102103971A Pending CN101359825A (zh) 2007-03-08 2008-03-10 用于改进的静电放电保护的方法和设备

Country Status (3)

Country Link
US (1) US20080218920A1 (enExample)
JP (1) JP2008235886A (enExample)
CN (1) CN101359825A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103187414A (zh) * 2011-12-29 2013-07-03 台湾积体电路制造股份有限公司 Esd保护电路单元
CN103795026A (zh) * 2014-02-28 2014-05-14 北京大学 输入级esd保护电路
CN105977938A (zh) * 2016-06-17 2016-09-28 中国电子科技集团公司第二十四研究所 芯片esd保护电路
CN106449629A (zh) * 2015-08-07 2017-02-22 敦泰电子股份有限公司 静电放电箝位电路
CN114784776A (zh) * 2022-04-19 2022-07-22 海光信息技术股份有限公司 静电释放钳位电路及多点同步释放静电的方法

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7679396B1 (en) * 2004-07-07 2010-03-16 Kao Richard F C High speed integrated circuit
JP2008263068A (ja) * 2007-04-12 2008-10-30 Nec Electronics Corp 静電気保護回路
US20080316660A1 (en) * 2007-06-20 2008-12-25 Ememory Technology Inc. Electrostatic discharge avoiding circuit
KR100894254B1 (ko) * 2007-11-06 2009-04-21 주식회사 실리콘웍스 전압강하가 최소화된 전원공급라인을 구비하는 반도체 칩
US20100073833A1 (en) * 2008-09-23 2010-03-25 Hao-Ping Hong Circuit apparatus having electrostatic discharge protection function
US9520486B2 (en) 2009-11-04 2016-12-13 Analog Devices, Inc. Electrostatic protection device
US10199482B2 (en) 2010-11-29 2019-02-05 Analog Devices, Inc. Apparatus for electrostatic discharge protection
US8803193B2 (en) 2011-05-11 2014-08-12 Analog Devices, Inc. Overvoltage and/or electrostatic discharge protection device
US8816389B2 (en) * 2011-10-21 2014-08-26 Analog Devices, Inc. Overvoltage and/or electrostatic discharge protection device
US8742455B2 (en) 2011-05-11 2014-06-03 Analog Devices, Inc. Apparatus for electrostatic discharge protection
US20140281601A1 (en) * 2013-03-14 2014-09-18 Apple Inc. Power boundary cell operation in multiple power domain integrated circuits
US9484739B2 (en) 2014-09-25 2016-11-01 Analog Devices Global Overvoltage protection device and method
JP2016162884A (ja) 2015-03-02 2016-09-05 株式会社東芝 静電気保護回路
US10181719B2 (en) 2015-03-16 2019-01-15 Analog Devices Global Overvoltage blocking protection device
US9520389B1 (en) * 2015-07-07 2016-12-13 National Chiao Tung University Silicon-controlled rectifier and an ESD clamp circuit
CN106786451A (zh) * 2016-11-30 2017-05-31 北京中电华大电子设计有限责任公司 一种模拟电源域esd保护电路
US10937782B2 (en) * 2017-09-14 2021-03-02 Nxp B.V. Electrostatic discharge protection structure
EP3944317A1 (en) * 2020-07-21 2022-01-26 Nexperia B.V. An electrostatic discharge protection semiconductor structure and a method of manufacture
US12433034B2 (en) * 2021-03-26 2025-09-30 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit device and method for ESD protection
US12021077B2 (en) * 2022-03-01 2024-06-25 Nxp, B.V. Cross-domain electrostatic discharge protection

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0837238A (ja) * 1994-07-21 1996-02-06 Hitachi Ltd 半導体集積回路装置
JP3327060B2 (ja) * 1995-07-17 2002-09-24 ソニー株式会社 半導体回路装置
US5623156A (en) * 1995-09-28 1997-04-22 Cypress Semiconductor Corporation Electrostatic discharge (ESD) protection circuit and structure for output drivers
US6075686A (en) * 1997-07-09 2000-06-13 Industrial Technology Research Institute ESD protection circuit for mixed mode integrated circuits with separated power pins
US20030107424A1 (en) * 2001-12-11 2003-06-12 Chien-Chang Huang ESD protection circuit
JP4183980B2 (ja) * 2002-06-05 2008-11-19 株式会社ルネサステクノロジ 半導体集積回路装置
JP2004186623A (ja) * 2002-12-06 2004-07-02 Kawasaki Microelectronics Kk 半導体回路
US7253453B2 (en) * 2003-05-21 2007-08-07 Industrial Technology Research Institute Charge-device model electrostatic discharge protection using active device for CMOS circuits
JP2006093598A (ja) * 2004-09-27 2006-04-06 Toshiba Corp 半導体集積回路
US7242561B2 (en) * 2005-01-12 2007-07-10 Silicon Integrated System Corp. ESD protection unit with ability to enhance trigger-on speed of low voltage triggered PNP
JP4806540B2 (ja) * 2005-05-18 2011-11-02 ルネサスエレクトロニクス株式会社 半導体集積回路装置

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103187414A (zh) * 2011-12-29 2013-07-03 台湾积体电路制造股份有限公司 Esd保护电路单元
CN103187414B (zh) * 2011-12-29 2015-11-25 台湾积体电路制造股份有限公司 Esd保护电路单元
CN103795026A (zh) * 2014-02-28 2014-05-14 北京大学 输入级esd保护电路
CN103795026B (zh) * 2014-02-28 2016-08-17 北京大学 输入级esd保护电路
CN106449629A (zh) * 2015-08-07 2017-02-22 敦泰电子股份有限公司 静电放电箝位电路
CN106449629B (zh) * 2015-08-07 2018-10-19 敦泰电子股份有限公司 静电放电箝位电路
CN105977938A (zh) * 2016-06-17 2016-09-28 中国电子科技集团公司第二十四研究所 芯片esd保护电路
CN114784776A (zh) * 2022-04-19 2022-07-22 海光信息技术股份有限公司 静电释放钳位电路及多点同步释放静电的方法

Also Published As

Publication number Publication date
JP2008235886A (ja) 2008-10-02
US20080218920A1 (en) 2008-09-11

Similar Documents

Publication Publication Date Title
CN101359825A (zh) 用于改进的静电放电保护的方法和设备
TWI485834B (zh) 結合靜電放電保護電路及方法
TWI334214B (en) Esd protection circuit
CN102301470B (zh) 用以减少在集成电路内的静电放电保护的占用面积的方法和装置
US8143700B2 (en) Electrostatic discharge protection circuit
TWI425732B (zh) 積體電路及輸入/輸出(i/o)單元庫以及用於在一積體電路處補償靜電放電(esd)之方法
US8705217B2 (en) Electrostatic discharge protection circuit
US6437407B1 (en) Charged device model electrostatic discharge protection for integrated circuits
CN1998120A (zh) 用于提供电流控制的静电放电保护的方法和装置
US20070053120A1 (en) Apparatus and method for improved triggering and leakage current control of esd clamping devices
US9537308B2 (en) ESD protection using shared RC trigger
CN102593122A (zh) 半导体esd电路和方法
KR20230028300A (ko) 향상된 esd(electrostatic discharge) 강건성을 위한 회로 기법들
US20080197415A1 (en) Electrostatic discharge protection circuit having multiple discharge paths
CN104377670B (zh) 用于集成电路器件的静电放电保护器件
CN107768369A (zh) 跨域esd保护
CN101626154A (zh) 集成电路esd全芯片防护电路
US20150342098A1 (en) I/o device, method for providing esd protection for an i/o device and esd protection device for an i/o device
JPH0897376A (ja) 静電放電対策用保護回路
US20120069478A1 (en) Integrated circuit esd protection using substrate in esd current path
EP2919347B1 (en) Surge-protection circuit and surge-protection method
CN1649227B (zh) 具有二或多供应电压的电子电路的静电放电保护电路
US7250660B1 (en) ESD protection that supports LVDS and OCT
KR100855265B1 (ko) 정전기 방전 보호 회로
JP2011155062A (ja) 半導体装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Open date: 20090204