JP5550635B2 - マルチ電圧静電気放電保護 - Google Patents
マルチ電圧静電気放電保護 Download PDFInfo
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- JP5550635B2 JP5550635B2 JP2011507495A JP2011507495A JP5550635B2 JP 5550635 B2 JP5550635 B2 JP 5550635B2 JP 2011507495 A JP2011507495 A JP 2011507495A JP 2011507495 A JP2011507495 A JP 2011507495A JP 5550635 B2 JP5550635 B2 JP 5550635B2
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- esd
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- 239000004065 semiconductor Substances 0.000 claims description 17
- 230000001052 transient effect Effects 0.000 description 18
- 238000010586 diagram Methods 0.000 description 17
- 239000003990 capacitor Substances 0.000 description 10
- 230000002457 bidirectional effect Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 241000282376 Panthera tigris Species 0.000 description 1
- 230000003416 augmentation Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
(電圧制限素子)を設けることが一般的である。
Claims (5)
- 電子素子であって、
当該電子素子に含まれる被保護半導体素子又は集積回路の第1の端子と第2の端子に渡って結合される静電放電(ESD)クランプを具現し、
当該電子素子は、
ソースとドレインとゲートとボディとを有する第1のESDトランジスタであって、該第1のESDトランジスタのソースは前記第2の端子に結合され、該第1のESDトランジスタのドレインは前記第1の端子に結合される、第1のESDトランジスタ、
該第1のESDトランジスタのゲートとソースとの間に結合される第1の抵抗器、
前記第1のESDトランジスタのボディとソースとの間に結合される第2の抵抗器、及び
ソースとドレインとゲートとを有する第1及び第2の制御トランジスタであって、該第1の制御トランジスタのソース及びドレインは前記第1の抵抗器に並列に結合され、前記第1の制御トランジスタのゲートは第1のバイアス電圧に結合されるよう適応され、前記第2の制御トランジスタのソース及びドレインは前記第2の抵抗器に並列に結合され、前記第2の制御トランジスタのゲートは第2のバイアス電圧に結合されるよう適応される、第1及び第2の制御トランジスタ、
を有する電子素子。 - ソースとドレインとゲートとボディとを有する第2のESDトランジスタであって、該第2のESDトランジスタのソース及びドレインは前記第1のESDトランジスタのソースと前記第2の端子との間に直列に結合される、第2のESDトランジスタ、
該第2のESDトランジスタのゲートとソースとの間に結合される第3の抵抗器、
前記第2のESDトランジスタのボディとソースとの間に結合される第4の抵抗器、及び
ソースとドレインとゲートとを有する第3及び第4の制御トランジスタであって、該第3の制御トランジスタのソース及びドレインは前記第3の抵抗器に並列に結合され、前記第3の制御トランジスタのゲートは第3のバイアス電圧に結合されるよう適応され、前記第4の制御トランジスタのソース及びドレインは前記第4の抵抗器に並列に結合され、前記第4の制御トランジスタのゲートは第4のバイアス電圧に結合されるよう適応される、第3及び第4の制御トランジスタ、
を更に有する請求項1に記載の電子素子。 - 前記第2のESDトランジスタのドレインは、前記第1のESDトランジスタのソースに結合される、
ことを特徴とする請求項2に記載の電子素子。 - 前記第2のESDトランジスタのソースは、前記第1のESDトランジスタのソースに結合される、
ことを特徴とする請求項2に記載の電子素子。 - 前記第1及び第2のバイアス電圧の電源と前記第1及び第2の制御トランジスタのゲートとの間の1又は複数の低域通過フィルタ、
を更に有する請求項1に記載の電子素子。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/112,209 | 2008-04-30 | ||
US12/112,209 US8279566B2 (en) | 2008-04-30 | 2008-04-30 | Multi-voltage electrostatic discharge protection |
PCT/US2009/034669 WO2009134515A1 (en) | 2008-04-30 | 2009-02-20 | Multi-voltage electrostatic discharge protection |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2011519488A JP2011519488A (ja) | 2011-07-07 |
JP2011519488A5 JP2011519488A5 (ja) | 2012-04-05 |
JP5550635B2 true JP5550635B2 (ja) | 2014-07-16 |
Family
ID=41255346
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011507495A Expired - Fee Related JP5550635B2 (ja) | 2008-04-30 | 2009-02-20 | マルチ電圧静電気放電保護 |
Country Status (5)
Country | Link |
---|---|
US (2) | US8279566B2 (ja) |
JP (1) | JP5550635B2 (ja) |
CN (1) | CN102017144B (ja) |
TW (1) | TWI460847B (ja) |
WO (1) | WO2009134515A1 (ja) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
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US8693148B2 (en) * | 2009-01-08 | 2014-04-08 | Micron Technology, Inc. | Over-limit electrical condition protection circuits for integrated circuits |
TWI399844B (zh) * | 2009-11-24 | 2013-06-21 | Nuvoton Technology Corp | 晶片及其靜電放電保護元件 |
US8982516B2 (en) | 2010-11-12 | 2015-03-17 | Freescale Semiconductor, Inc. | Area-efficient high voltage bipolar-based ESD protection targeting narrow design windows |
US8390092B2 (en) | 2010-11-12 | 2013-03-05 | Freescale Semiconductor, Inc. | Area-efficient high voltage bipolar-based ESD protection targeting narrow design windows |
JP2012142502A (ja) * | 2011-01-05 | 2012-07-26 | Sony Corp | 保護素子及び保護素子を備えた半導体装置 |
US8547169B2 (en) * | 2011-05-10 | 2013-10-01 | Qualcomm Incorporated | Programmable noise filtering for bias kickback disturbances |
US8611058B2 (en) | 2011-08-23 | 2013-12-17 | Micron Technology, Inc. | Combination ESD protection circuits and methods |
US8724268B2 (en) | 2011-08-30 | 2014-05-13 | Micron Technology, Inc. | Over-limit electrical condition protection circuits and methods |
WO2013057537A1 (en) * | 2011-10-21 | 2013-04-25 | Freescale Semiconductor, Inc. | Integrated circuit device, controller area network driver module and method therefor |
KR101350461B1 (ko) | 2012-04-03 | 2014-01-09 | 주식회사 하이딥 | 튜너블 커패시터 |
CN104143820A (zh) * | 2013-05-08 | 2014-11-12 | 博通集成电路(上海)有限公司 | 静电放电保护电路及方法 |
US9330961B2 (en) | 2013-09-23 | 2016-05-03 | Freescale Semiconductor, Inc. | Stacked protection devices and related fabrication methods |
TWI501498B (zh) * | 2013-10-04 | 2015-09-21 | Silicon Motion Inc | 靜電放電保護電路及其靜電保護方法 |
US9225163B2 (en) * | 2013-11-01 | 2015-12-29 | Infineon Technologies Ag | Combined ESD active clamp for cascaded voltage pins |
US9299669B2 (en) * | 2014-01-23 | 2016-03-29 | Amlogic Co., Ltd. | Electrostatic discharge device gate biasing for a transmitter |
US9780558B2 (en) | 2014-12-11 | 2017-10-03 | Nxp Usa, Inc. | Semiconductor device and related protection methods |
US9620496B2 (en) | 2015-03-10 | 2017-04-11 | Nxp Usa, Inc. | Stacked protection devices with overshoot protection and related fabrication methods |
US9893050B2 (en) | 2015-06-30 | 2018-02-13 | Nxp Usa, Inc. | ESD protection structure |
US10263577B2 (en) * | 2016-12-09 | 2019-04-16 | Advanced Energy Industries, Inc. | Gate drive circuit and method of operating the same |
JP2018120955A (ja) * | 2017-01-25 | 2018-08-02 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US10193338B2 (en) * | 2017-05-05 | 2019-01-29 | Synaptics Incorporated | Voltage triggered edge insensitive protection circuit |
US10141300B1 (en) * | 2017-10-19 | 2018-11-27 | Alpha And Omega Semiconductor (Cayman) Ltd. | Low capacitance transient voltage suppressor |
US11088540B2 (en) * | 2018-10-30 | 2021-08-10 | Semiconductor Components Industries, Llc | Switch circuit with high voltage protection that reduces leakage currents |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0435047A3 (en) * | 1989-12-19 | 1992-07-15 | National Semiconductor Corporation | Electrostatic discharge protection for integrated circuits |
US5086365A (en) | 1990-05-08 | 1992-02-04 | Integrated Device Technology, Inc. | Electostatic discharge protection circuit |
JPH05275624A (ja) * | 1992-03-25 | 1993-10-22 | Sony Corp | 半導体保護回路 |
JP3471906B2 (ja) * | 1994-08-05 | 2003-12-02 | 川崎マイクロエレクトロニクス株式会社 | 半導体装置 |
US5841814A (en) * | 1995-10-17 | 1998-11-24 | Paradyne Corporation | Sampling system for radio frequency receiver |
US5686751A (en) | 1996-06-28 | 1997-11-11 | Winbond Electronics Corp. | Electrostatic discharge protection circuit triggered by capacitive-coupling |
US6160434A (en) * | 1998-05-14 | 2000-12-12 | Mitsubishi Denki Kabushiki Kaisha | Ninety-degree phase shifter |
US6459553B1 (en) * | 1999-03-19 | 2002-10-01 | Ati International Srl | Single gate oxide electrostatic discharge protection circuit |
JP2001339044A (ja) * | 2000-05-26 | 2001-12-07 | Mitsumi Electric Co Ltd | 半導体装置の静電保護回路 |
US6621675B2 (en) * | 2001-02-02 | 2003-09-16 | Broadcom Corporation | High bandwidth, high PSRR, low dropout voltage regulator |
JP3678156B2 (ja) * | 2001-03-01 | 2005-08-03 | 株式会社デンソー | 静電気保護回路 |
US6747857B1 (en) * | 2002-02-01 | 2004-06-08 | Taiwan Semiconductor Manufacturing Company | Clamping circuit for stacked NMOS ESD protection |
US6844597B2 (en) * | 2003-02-10 | 2005-01-18 | Freescale Semiconductor, Inc. | Low voltage NMOS-based electrostatic discharge clamp |
JP2005260039A (ja) | 2004-03-12 | 2005-09-22 | Matsushita Electric Ind Co Ltd | 半導体集積回路装置 |
US7221551B2 (en) * | 2004-06-11 | 2007-05-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cascaded gate-driven ESD clamp |
US7027278B1 (en) * | 2004-07-22 | 2006-04-11 | National Semiconductor Corporation | Stacked high-voltage ESD protection clamp with triggering voltage circuit control |
FR2875335B1 (fr) * | 2004-09-15 | 2007-03-02 | Atmel Nantes Sa Sa | Circuit electronique a double alimentation et a moyens de protection contre les claquages, et moyens de protection correspondants |
JP4617231B2 (ja) * | 2005-09-16 | 2011-01-19 | 太陽誘電株式会社 | ランプ駆動装置 |
US7626243B2 (en) * | 2006-08-04 | 2009-12-01 | Advanced Analogic Technologies, Inc. | ESD protection for bipolar-CMOS-DMOS integrated circuit devices |
JP4641021B2 (ja) * | 2006-11-16 | 2011-03-02 | 株式会社日立メディアエレクトロニクス | マルチバンド無線機及び半導体集積回路 |
US7804669B2 (en) * | 2007-04-19 | 2010-09-28 | Qualcomm Incorporated | Stacked ESD protection circuit having reduced trigger voltage |
-
2008
- 2008-04-30 US US12/112,209 patent/US8279566B2/en active Active
-
2009
- 2009-02-20 CN CN2009801157727A patent/CN102017144B/zh active Active
- 2009-02-20 WO PCT/US2009/034669 patent/WO2009134515A1/en active Application Filing
- 2009-02-20 JP JP2011507495A patent/JP5550635B2/ja not_active Expired - Fee Related
- 2009-03-05 TW TW098107175A patent/TWI460847B/zh not_active IP Right Cessation
-
2012
- 2012-09-12 US US13/612,466 patent/US8432654B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20130010394A1 (en) | 2013-01-10 |
US8432654B2 (en) | 2013-04-30 |
WO2009134515A1 (en) | 2009-11-05 |
CN102017144B (zh) | 2012-11-21 |
CN102017144A (zh) | 2011-04-13 |
US20090273867A1 (en) | 2009-11-05 |
JP2011519488A (ja) | 2011-07-07 |
US8279566B2 (en) | 2012-10-02 |
TWI460847B (zh) | 2014-11-11 |
TW200945554A (en) | 2009-11-01 |
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