JP2008227455A - 半導体チップ積層用接着フィルム - Google Patents
半導体チップ積層用接着フィルム Download PDFInfo
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- JP2008227455A JP2008227455A JP2007321324A JP2007321324A JP2008227455A JP 2008227455 A JP2008227455 A JP 2008227455A JP 2007321324 A JP2007321324 A JP 2007321324A JP 2007321324 A JP2007321324 A JP 2007321324A JP 2008227455 A JP2008227455 A JP 2008227455A
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- XDTMQSROBMDMFD-UHFFFAOYSA-N C1CCCCC1 Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 5
- 0 CCCCC[C@]1C(*2)=C2CC[C@@]1CCCC Chemical compound CCCCC[C@]1C(*2)=C2CC[C@@]1CCCC 0.000 description 2
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Abstract
【解決手段】接着フィルムは、紫外線硬化型低分子化合物を含む熱可塑性フェノキシ樹脂接着層5を中心に、その接着層の両面に熱硬化性エポキシ樹脂接着層6を備える3層構造を含む多層型接着フィルムであって、熱硬化性エポキシ樹脂及び熱可塑性フェノキシ樹脂の界面に相溶性を付与した後、紫外線硬化により高弾性率のフェノキシフィルムを内部に直接形成することを含む方法により製造される接着フィルムである。
【選択図】図2E
Description
(試料1)第1及び第3エポキシ樹脂接着層の製造:
クレゾールノボラックエポキシ樹脂(東都化成株式会社、YDCN 8P)100部、フェノールノボラック樹脂(KOLON油化、KPH2000)50部、1−シアノエチル−2−フェニルイミダゾール(四国化成工業株式会社、キュアゾール2PZ−CN)0.02部をメチルエチルケトンの溶媒中で3時間攪拌し、さらに、フェノキシ樹脂(東都化成株式会社、YP50)50部を混合して6時間攪拌した。そして、離型処理された厚さ38μmのポリテレフタレートフィルムを基材として塗布した後、90℃で3分間乾燥して、厚さ40μm、Bステージ(stage)の第1接着層を得、10μm、Bステージの第3接着層を得た。
フェノキシ樹脂(東都化成株式会社、YP50)100部をメチルエチルケトンを溶媒として調製した後、エポキシアクリレート20部、アセトフェノン1部を混合して30分間攪拌した。そして、離型処理された厚さ38μmのポリテレフタレートフィルムを基材として塗布した後、90℃で3分間乾燥して、厚さ30μmの接着層を得た。
前記試料1と同様にして厚さ40μm、Bステージの第1接着層を得、第1接着層上に、試料2と同様に厚さ30μmの接着層を得た後、前記試料1と同様にして厚さ10μm、Bステージの第3接着層を得、キャストポリプロピレンフィルムで合紙保護した。
(比較試料1)スペーサを含む接着フィルムの製造:
比較のために、前記試料2の代わりにスペーサを使用したこと以外は、試料3と同様に接着フィルムを製造した。ここで、スペーサとしてはポリイミドフィルム(50μm、ユーピレックスS、Tg 500℃)を使用し、試料3と同様に製造した。
比較のために、前記試料2を除いて第1及び3接着層と同じ成分及び配合比の、各々厚さ40μmの2つの接着層を製造し、互いに合紙して80μmの単一層に得た。さらに、試料3と同様の処理を行った。
上記で製造されたエポキシ樹脂接着層とフェノキシ樹脂接着層との間の相溶性に応じた接着力を確認するために、試料1及び試料2を各々、長さ150mm、幅50mmに切断した後、常温、0.2MPaで合紙し、硬化条件に応じた接着力を確認した。その結果を表1に示す。UV照射強度は200mJ/cm2であった。
試料1、試料2、試料3に対して動的粘弾性測定装置(TA社、AR2000)を用いて貯蔵弾性率を測定した。試料は各々、長さ20mm、幅4mmに切断し、試料1及び試料3は170℃、1時間の硬化後、試料2はUV照射後に、各々、昇温速度5℃/min、10Hzの条件下、引張モードで測定した。その結果を表2に示す。UV照射強度は200mJ/cm2であった。
試料3、比較試料1及び比較試料2を各々、ダイシングテープ(Adwill G−64、Lintec corporation販売製造)に、常温、0.2MPaの圧力で積層した後、厚さ70μm×直径8インチのウエハに60℃でラミーネートした。そして、各々16mm×10mmのチップサイズに切断し、ピックアップして4層に積層した後、SAT(scanning acoustic tomography)を使用して界面状態及び配線状態を確認した。その結果を表3に示す。
Rpm:40,000
ソー深さ(Saw depth):50μm
積層条件:各々、150℃×3sec×0.5MPaで積層した後、200℃で30分間放置
実験結果3で製造された試片と同じ方法で試片を製造した後、耐PCT性及び耐クラック性を評価した。耐PCT性については、121℃、湿度100%、2気圧の雰囲気下で、24時間後にチップ間の積層界面の剥離を観察した。耐クラック性評価については、JEDEC規格J−STD−020Aに準じて、260℃で30秒間維持され得るように設定されたIRリフローに前記試片を3回通過させた後、SATを介して剥離を観察した。
Claims (6)
- (a)フェノキシ樹脂、エポキシ樹脂及びフェノール樹脂を含む第1接着層と、
(b)フェノキシ樹脂及び紫外線硬化型低分子化合物を含む他の接着層であって、前記第1接着層上に接着された第2接着層と、
(c)フェノキシ樹脂、エポキシ樹脂及びフェノール樹脂を含むさらに他の接着層であって、前記第2接着層上に接着された第3接着層と、
を含むことを特徴とする、半導体チップ積層用接着フィルム。 - 前記第1接着層の厚さは1〜30μmであり、
前記第2接着層の厚さは5〜50μmであり、
前記第3接着層の厚さは30〜80μmであることを特徴とする、請求項1に記載の半導体チップ積層用接着フィルム。 - 前記紫外線硬化型低分子化合物は、紫外線硬化により前記第2接着層の前記フェノキシ樹脂の弾性率を高めることができる化合物であって、エポキシ系アクリレート化合物であることを特徴とする、請求項1に記載の半導体チップ積層用接着フィルム。
- 前記フェノキシ樹脂は、紫外線硬化による動的貯蔵弾性率が260℃で20MPa以上であることを特徴とする、請求項1に記載の半導体チップ積層用接着フィルム。
- 前記第1接着層及び第3接着層は、前記エポキシ樹脂100重量部に対してフェノール樹脂10〜70重量部を含み、前記エポキシ樹脂とフェノール樹脂との合計100重量部に対してフェノキシ樹脂10〜200重量部を含み、
前記第2接着層は、前記フェノキシ樹脂100重量部に対して紫外線硬化型低分子化合物1〜50重量部を含むことを特徴とする、請求項1〜5のいずれか1項に記載の半導体チップ積層用接着フィルム。
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