201139604 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種晶圓加工用膠帶。特別是關於一種 具有膠黏膜及層疊型切割管芯焊接膜的晶圓加工用膠帶， 該層疊型切割管芯焊接膜具有切割膠帶和管芯焊接膜這兩 個功能。 【先前技術】 在半導體裝置的製造步驟中，實施將半導體晶圓切割 分離（dicing)成半導體晶片單元的步驟、拾取分離的半 導體晶片的步驟、進一步將拾取的半導體晶片與導線架或 封裝基板等黏接的管芯焊接（安裝）步驟。 近年來’作爲上述半導體裝置的製造步驟中所使用的 晶圓加工用膠帶，提出了例如具有膠黏劑層的晶圓加工用 膠帶（膠黏膜）或具有在基材膜上層疊有黏合劑層、以及 膠黏劑層的結構的晶圓加工用膠帶（切割管芯焊接膜： DDF )，已經被實用化。以在焊接時具有流動性爲目的或 以抑制固化收縮爲目的，在膠黏膜中添加塡料。在切割管 芯焊接膜的情況下，以進一步提高切割時的切削性等爲目 的，也在膠黏劑層中添加塡料（例如參照專利文獻1 )。 [先行技術文獻] [專利文獻] [專利文獻1]日本特開2005-303275號公報 201139604 【發明內容】 但是，近年來’隨著半導體裝置的小型化、薄膜化的 進展，根據膠黏膜或膠黏劑層的厚度與塡料的尺寸的關係 ，有可能在半導體裝置中產生空隙或黏接不良。不加入環 氧樹脂及固化劑時，固化收縮變大，在半導體晶片及基板 上產生翹曲。 因此，本發明是爲了解決如上所述的問題點而完成的 發明，其目的在於，提供一種可以防止在半導體裝置的製 造步驟中貼合晶圓加工用膠帶時產生空隙或翅曲的膠黏'丨生 能高的晶回加工用膠帶。 爲了解決上述課題，本發明的第~態樣的晶圓加工用 膠帶，特徵爲具有至少含有丙烯酸系共聚樹脂、在室溫下 爲液態的環氧樹脂、該環氧樹脂的固化劑和塡料的膠黏劑 層，相對於前述膠黏劑層的厚度Χμηΐ，前述塡料的平均粒 徑在〇.〇8Χμηι以下。 本發明的第二態樣的晶圓加工用膠帶，特徵爲在上述 本發明的第一態樣的晶圓加工用膠帶中，相對於前述丙烯 酸系共聚樹脂100質量份，含有30質量份以上145質量份以 下的前述環氧樹脂及前述固化劑。 本發明的第三態樣的晶圓加工用膠帶，特徵係如上述 本發明的第一或第二態樣的晶圓加工用膠帶，而在設置於 基材膜上的黏合劑層上層疊有前述膠黏劑層。201139604 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a tape for wafer processing. In particular, it relates to a wafer processing tape having an adhesive film and a laminated die-cut soldering film having the functions of a dicing tape and a die-bonding film. [Prior Art] In the manufacturing step of a semiconductor device, a step of dicing a semiconductor wafer into a semiconductor wafer unit, a step of picking up a separated semiconductor wafer, and further picking up a semiconductor wafer and a lead frame or a package substrate are performed. Bonded die soldering (installation) steps. In recent years, as a tape for wafer processing used in the manufacturing process of the semiconductor device described above, for example, a tape for processing a wafer (adhesive film) having an adhesive layer or a layer of an adhesive layer laminated on a substrate film has been proposed. As well as the wafer processing tape (cutting die bonding film: DDF) of the structure of the adhesive layer, it has been put into practical use. A binder is added to the adhesive film for the purpose of fluidity during welding or for suppressing curing shrinkage. In the case of cutting the die-bonding film, it is also added to the adhesive layer for the purpose of further improving the machinability at the time of cutting (for example, see Patent Document 1). [Patent Document] [Patent Document 1] Japanese Laid-Open Patent Publication No. 2005-303275 No. 201139604 [Invention] However, in recent years, along with the progress of miniaturization and thinning of semiconductor devices, according to adhesive film or glue The relationship between the thickness of the adhesive layer and the size of the dip is likely to cause voids or poor adhesion in the semiconductor device. When the epoxy resin and the curing agent are not added, the curing shrinkage becomes large, and warpage occurs on the semiconductor wafer and the substrate. Accordingly, the present invention has been made to solve the above problems, and an object of the invention is to provide an adhesive which can prevent voids or fins from being generated when a wafer processing tape is bonded in a manufacturing step of a semiconductor device. A high-quality crystal back processing tape. In order to solve the above problems, the tape for wafer processing according to the first aspect of the present invention is characterized in that it has an epoxy resin containing at least an acrylic copolymer resin and being liquid at room temperature, and a curing agent and a coating material of the epoxy resin. The adhesive layer has an average particle diameter of 〇.〇8Χμηι or less with respect to the thickness of the adhesive layer Χμηΐ. The tape for processing a wafer according to a second aspect of the present invention is characterized in that, in the tape for processing a wafer according to the first aspect of the present invention, it is contained in an amount of 30 parts by mass or more based on 100 parts by mass of the acrylic copolymer resin. The epoxy resin and the curing agent below the part by mass. A tape for processing a wafer according to a third aspect of the present invention is characterized in that, in the first or second aspect of the present invention, the tape for processing a wafer is laminated on the adhesive layer provided on the substrate film. The aforementioned adhesive layer.
-6- 201139604 發明效果 通過使用本發明的晶圓加工用膠帶，可以防止半導體 裝置的製造步驟中貼合晶圓加工用膠帶時的空隙或翹曲的 產生，同時，通過防止空隙或翹曲的產生，可以謀求半導 體裝置的成品率的提高。另外，可得到保持較高的黏接力 且可靠性高的半導體裝置。 【實施方式】 下面，基於附圖對本發明的實施方式進行詳細說明。 如圖1所示，本實施方式的晶圓加工用膠帶10具有： 由膜狀的基材膜12a和在其上所形成的黏合劑層12b構成的 黏合劑膜12、以及層疊於該黏合劑膜12上的膠黏劑層13。 這樣，在晶圓加工用膠帶10中依次形成了基材膜12a、黏 合劑層12b和膠黏劑層13。 需要說明的是，黏合劑層12b既可以由一層黏合劑層 構成，也可以由層疊有兩層以上的黏合劑層的層構成。另 外，在圖1中例示了爲了保護膠黏劑層13，在晶圓加工用 膠帶10上設置剝離覆面層11的情形。 黏合劑膜12及膠黏劑層13可以根據使用步驟或裝置預 先切割（預切割）成規定形狀。本發明的晶圓加工用膠帶 1 〇包括切割成一張張半導體晶圓的狀態和將形成了多個半 導體圓的長條狀膜捲繞成輥狀的狀態。 下面，對本實施方式的晶圓加工用膠帶10的各構成要 素進行詳細說明。 201139604 (膠黏劑層） 膠黏劑層13在貼合於半導體晶圓1等上再被切 照後述的圖3 )後，在拾取單片半導體晶片2時（參 的圖5)，附著於半導體晶片2的背面，作爲將半導 2固定於基板或導線架等時的膠黏劑使用。 膠黏劑層13至少含有丙烯酸系共聚樹脂、在室 液態的環氧樹脂、環氧樹脂的固化劑和塡料，此外 混合可在膠黏劑中使用的公知的聚醯亞胺樹脂、聚 脂、聚醚醯亞胺樹脂、聚醯胺醯亞胺樹脂、聚酯樹 酯醯亞胺樹脂、苯氧基樹脂、聚颯樹脂、聚醚楓樹 苯硫醚樹脂、聚醚酮樹脂、氯化聚丙烯樹脂、聚氨 、在室溫下爲固態的環氧樹脂、聚丙烯醯胺樹脂、 脂等。 丙烯酸系共聚物通過將包含具有環氧基的（甲 烯酸酯單體、丙烯腈及其它共聚性單體的單體溶液 由基聚合法等進行溶液聚合來得到。另外，在聚合 爲聚合引發劑，使用過氧化苯甲醯、過氧化二異丙 丁基過氧化物、叔丁基過氧化苯甲酸酯等有機過氧 偶氮二異丁腈、偶氮二戊腈等偶氮系化合物。作爲 氧基的（甲基）丙烯酸酯單體，使用甲基丙烯酸縮 酯、丙烯酸縮水甘油酯等具有共聚性雙鍵的化合物 酸系共聚物的重量平均分子量較佳者爲5萬以上， 者爲在20萬〜100萬的範圍內。重量平均分子量過低 割（參 照後述 體晶片 溫下爲 ，可以 醯胺樹 脂、聚 脂、聚 酯樹脂 密胺樹 基）丙 利用自 時，作 苯 '二 化物， 具有環 水甘油 。丙烯 特別佳 時，膜-6-201139604 Advantageous Effects of Invention By using the tape for wafer processing of the present invention, it is possible to prevent occurrence of voids or warpage when bonding a wafer processing tape in the manufacturing process of a semiconductor device, and at the same time, prevent voids or warpage. As a result, the yield of the semiconductor device can be improved. In addition, a semiconductor device which maintains high adhesion and is highly reliable can be obtained. [Embodiment] Hereinafter, embodiments of the present invention will be described in detail based on the drawings. As shown in FIG. 1, the wafer processing tape 10 of the present embodiment has a binder film 12 composed of a film-like base film 12a and an adhesive layer 12b formed thereon, and a laminate of the adhesive. Adhesive layer 13 on film 12. Thus, the base film 12a, the adhesive layer 12b, and the adhesive layer 13 are sequentially formed in the wafer processing tape 10. The adhesive layer 12b may be composed of a layer of a binder or a layer in which two or more layers of a binder are laminated. Further, in Fig. 1, a case where the peeling coating layer 11 is provided on the wafer processing tape 10 in order to protect the adhesive layer 13 is exemplified. The adhesive film 12 and the adhesive layer 13 can be pre-cut (pre-cut) into a prescribed shape according to the use procedure or apparatus. The wafer processing tape 1 of the present invention includes a state in which a plurality of semiconductor wafers are cut and a long film in which a plurality of semiconductor circles are formed are wound into a roll shape. Hereinafter, each constituent element of the wafer processing tape 10 of the present embodiment will be described in detail. 201139604 (adhesive layer) The adhesive layer 13 is bonded to the semiconductor wafer 1 or the like and then diced to FIG. 3 which will be described later, and is attached to the single semiconductor wafer 2 (see FIG. 5). The back surface of the semiconductor wafer 2 is used as an adhesive for fixing the semiconductors 2 to a substrate or a lead frame. The adhesive layer 13 contains at least an acrylic copolymer resin, an epoxy resin in a room liquid, a curing agent and a coating material of an epoxy resin, and a known polyimine resin or polyester which can be used in an adhesive. , polyether phthalimide resin, polyamidoximine resin, polyester resin phthalimide resin, phenoxy resin, polyfluorene resin, polyether maple phenyl sulfide resin, polyether ketone resin, chlorination Polypropylene resin, polyurethane, epoxy resin which is solid at room temperature, polypropylene amide resin, grease, and the like. The acrylic copolymer is obtained by solution polymerization of a monomer solution containing a cycloalkyl group (methionate monomer, acrylonitrile, and other copolymerizable monomer by a base polymerization method or the like. In addition, polymerization is initiated by polymerization. As the agent, an azo compound such as organic peroxy azobisisobutyronitrile or azobisvaleronitrile such as benzamidine peroxide, diisopropylbutyl peroxide or t-butylperoxybenzoate is used. As the (meth) acrylate monomer of the oxy group, a compound having a copolymerizable double bond such as a methacrylic acid ester or a glycidyl acrylate has a weight average molecular weight of preferably 50,000 or more. In the range of 200,000 to 1,000,000, the weight average molecular weight is too low (refer to the temperature of the body wafer described later, which can be used as a guanamine resin, a polyester resin, or a polyester resin melamine tree base). Compound, with cycloglycerol. When propylene is particularly good, film
S -8 - 201139604 形成不充分，過高時，與其它成分的相溶性變差，結果是 妨礙膜的形成。 環氧樹脂只要在固化後呈現膠黏作用、且在室溫下爲 液態，就沒有特別限定，可以使用二官能團以上、且較佳 者爲重量平均分子量低於5000、更佳者爲低於3000的環氧 樹脂。進一步更佳者可以使用重量平均分子量爲5 00以上 、特別佳者爲8 00以上的環氧樹脂。 可列舉例如：雙酚A型環氧樹脂、雙酚F型環氧樹脂 、雙酚S型環氧樹脂、脂環式環氧樹脂、脂肪族鏈狀環氧 樹脂、線形酚醛清漆型環氧樹脂、甲酚酚醛清漆型環氧樹 脂、雙酚A酚醛清漆型環氧樹脂、雙酚的二縮水甘油醚化 物、萘二醇的二縮水甘油醚化物、酚類的二縮水甘油醚化 物、醇類的二縮水甘油醚化物及它們的烷基取代體、鹵化 物、氫化物等二官能環氧樹脂、酚醛清漆型環氧樹脂。另 外’也可以應用多官能環氧樹脂或含雜環環氧樹脂等一般 公知的環氧樹脂。這些環氧樹脂可以單獨使用或組合兩種 以上使用。而且，可以在不損害特性的範圍內含有環氧樹 脂以外的成分作爲雜質。 作爲環氧樹脂的固化劑，可以使用例如酚系樹脂。作 爲酚系樹脂，沒有特別限定地使用烷基酚、多元酚、萘酚 、亞聯苯基等酚類與醛類的縮合物等。這些酚系樹脂中所 含的酚性羥基通過加熱可容易地與環氧樹脂的環氧基進行 加成反應，而形成耐衝擊性高的固化物。 在酚系樹脂中，較佳者使用酚醛清漆樹脂、鄰甲酚酚 -9- 201139604 醛清漆樹脂、對甲酚酚醛清漆樹脂、叔丁基酚醛樹脂、二 環戊二烯甲酚樹脂、聚對乙烯苯酚樹脂、雙酚A型酚醛清 漆樹脂、苯酚-亞聯苯基樹脂或它們的改性物等。 作爲其它固化劑，也可以使用熱活性型潛在性環氧樹 脂固化劑。該固化劑爲是在室溫下不與環氧樹脂反應，通 過某種溫度以上的加熱而活化與環氧樹脂反應的類型的固 化劑。作爲活化方法，有以下方法：通過加熱引起的化學 反應生成活性種（陰離子、陽離子）的方法；在室溫附近 穩定地分散於環氧樹脂中並在高溫下與環氧樹脂相溶、溶 解，引發固化反應的方法；利用分子篩封入類型的固化劑 在高溫下溶出並引發固化反應的方法；利用微膠囊的方法 等。 作爲熱活性型潛在性環氧樹脂固化劑，可以列舉：各 種鑰鹽或二元酸二醯肼化合物、雙氰胺、胺加合物固化劑 、咪唑化合物等高熔點活性氫化合物等。 另外，膠黏劑層13較佳者爲相對於上述丙烯酸系共聚 樹脂1〇〇質量份，含有30質量份以上145質量份以下的上述 環氧樹脂及環氧樹脂的固化劑。 另外，也可以使用固化促進劑等作爲助劑。作爲可以 用於本發明的固化促進劑，沒有特別限制，可以使用例如 叔胺、咪唑類、季銨鹽等。作爲本發明中較佳者使用的咪 唑類，可列舉例如：2-甲基咪唑、2-乙基-4-甲基咪唑、1-氰基乙基-2-苯基咪唑、卜飫基乙基-2·苯基咪唑偏苯三酸 酯等，這些物質也可以使用1種或並用2種以上。咪唑類例 -10- 201139604 如由四國化成工業株式會社以2E4MZ、2PZ、2PZ-CN、 2PZ-CNS這樣的商品名市售。 作爲塡料，可列舉：結晶二氧化矽、合成二氧化矽等 二氧化矽或氧化鋁、玻璃球等無機塡料。作爲無機塡料， 沒有特別限制，可列舉例如：氫氧化鋁、氫氧化鎂、碳酸 鈣、碳酸鎂、矽酸鈣、矽酸鎂、氧化鈣、氧化鎂、氧化鋁 、氮化鋁、硼酸鋁晶須、氮化硼、結晶質二氧化矽、非晶 質二氧化矽等。這些塡料也可以使用1種或並用2種以上。 爲了提高熱傳導性，較佳者爲氧化鋁、氮化鋁、氮化硼、 結晶性二氧化矽、非晶性二氧化矽等。在特性的平衡的觀 點考慮，較佳者爲二氧化矽。 相對於膠黏劑層13的厚度Χμιη，塡料的平均粒徑爲 0·08Χμηι以下（Χμιη的0.08倍以下）。這樣，塡料的平均 粒徑相對於膠黏劑層13的厚度充分小，從而可以防止在將 膠黏劑層13黏貼於半導體晶圓1時捲入空氣而產生空隙。 在此’塡料的平均粒徑相對於膠黏劑層13的厚度Χμηι，爲 0.08Χμηι時，整體地成爲小徑’在黏貼於半導體晶圓1時 流動性變差，但在本發明中’使用在室溫下爲液態的環氧 樹脂作爲熱固化成分，因此，可以容易地黏貼於半導體晶 圓1。 而且，爲了使不同種材料間的介面結合良好，也可以 配合偶聯劑。作爲偶聯劑’較佳者爲矽烷偶聯劑。作爲矽 烷偶聯劑’可列舉：r-環氧丙氧基丙基三甲氧基矽院、 r-锍基丙基三甲氧基矽烷、r-氨基丙基三乙氧基矽烷、 -11 - 201139604 r-脲基丙基三乙氧基矽烷、N-沒-氨基乙基-氨基丙基 三甲氧基矽烷等。就偶聯劑的配合量而言，從添加產生的 效果或耐熱性及成本方面考慮，相對于形成分散相和連續 相的各組合物的總計100質量份，較佳者爲添加01〜10質 量份。 另外’清漆化的溶劑較佳者使用沸點比較低的甲基乙 基酮 '丙酮、甲基異丁酮、2 -乙氧基乙醇、甲苯、丁基溶 纖劑、甲醇、乙醇、2-甲氧基乙醇等。另外，可以以提高 塗膜性等目的加入高沸點溶劑。作爲高沸點溶劑，可列舉 :二甲基乙醯胺 '二甲基甲醯胺、甲基吡咯烷酮、環己酮 等。 膠黏劑層1 3的厚度較佳者爲5〜20 μπι左右。 (黏合劑膜） 作爲黏合劑膜1 2，沒有特別限制，只要在切割半導體 晶圓1時（參照後述的圖3 )，具有不使半導體晶圓1剝離 的充分的黏合力，而在切割後拾取單片半導體晶片2時（ 參照後述的圖5 )，顯示可以容易地從膠黏劑層1 3剝離的 低的黏合力即可。例如，較佳者使用在基材膜1 2a上設有 黏合劑層12b的黏合劑膜。 作爲黏合劑膜1 2的基材膜1 2a，只要爲現有公知的基 材膜，就可以沒有特別限制地使用，但在使用放射線固化 性的材料作爲後述的黏合劑厨1 2b時，較佳者使用具有放 射線透射性的基材膜。 -12- 201139604 例如，作爲其材料，可以列舉：聚乙烯、聚丙烯、乙 烯·丙烯共聚物 '聚丁烯-1、聚-4-甲基戊烯-1、乙烯-醋酸 乙烯酯共聚物、乙烯-丙烯酸乙酯共聚物、乙烯-丙烯酸甲 酯共聚物、乙烯-丙烯酸共聚物、離聚物等烯烴的均聚 物或共聚物或者它們的混合物，聚氨酯、苯乙烯·乙烯-丁 烯或戊烯系共聚物、聚醯胺-多元醇共聚物等熱塑性彈性 體及它們的混合物。另外，基材膜12a可以爲選自上述這 些組中的2種以上的材料的混合物，這些基材膜可以爲單 層或多層的基材膜。 基材膜12a的厚度沒有特別限定，可適當設定，較佳 者爲50〜200μηι。 作爲黏合劑膜12的黏合劑層12b中所使用的樹脂，沒 有特別限定，只要在擴展時（參照後述的圖4)具有不使 膠黏劑層13及半導體晶圓1剝離的程度的保持性，在拾取 時（參照後述的圖5)具有容易與膠黏劑層13剝離的特性 即可。爲了使拾取性提高，黏合劑層1 2b較佳者爲放射線 固化性的黏合劑層。 較佳者例如在黏合劑中所使用的公知的氯化聚丙烯樹 脂、丙烯酸樹脂、聚酯樹脂、聚氨酯樹脂、環氧樹脂、加 成反應型有機聚矽氧烷系樹脂、矽丙烯酸酯樹脂、乙烯-醋酸乙烯酯共聚物、乙烯-丙烯酸乙酯共聚物、乙烯-丙烯 酸甲酯共聚物、乙烯·丙烯酸共聚物、聚異戊二烯或苯乙 烯•丁二烯共聚物或其氫化物等各種彈性體等或在其混合 物中適當配合放射線聚合性化合物而製備黏合劑。另外， -13- 201139604 可以加入各種表面活性劑或表面平滑劑。黏合劑層1 2b的 厚度可以沒有特別限定地適當設定，較佳者爲5〜30 μιη。 聚合性化合物可使用例如在通過光照射可以三維網狀 化的分子內具有至少2個以上光聚合性碳-碳雙鍵的低分子 量化合物或在取代基上具有光聚合性碳-碳雙鍵基團的聚 合物或低聚物。具體而言，可以使用三羥甲基丙烷三丙烯 酸酯、季戊四醇三丙烯酸酯、季戊四醇四丙烯酸酯、二季 戊四醇單羥基五丙烯酸酯、二季戊四醇六丙烯酸酯、1，4-丁二醇二丙烯酸酯、1，6-己二醇二丙烯酸酯、聚乙二醇二 丙烯酸酯或低聚酯丙烯酸酯等、矽丙烯酸酯等丙烯酸或各 種丙烯酸酯類的共聚物等。 另外，除如上所述的丙烯酸酯系化合物之外，還可以 使用尿烷丙烯酸酯系低聚物。尿烷丙烯酸酯系低聚物是使 具有羥基的丙烯酸酯或甲基丙烯酸酯（例如丙烯酸-2-羥 基乙酯、甲基丙烯酸-2-羥基乙酯、丙烯酸-2-羥基丙酯、 甲基丙烯酸-2-羥基丙酯、聚乙二醇丙烯酸酯、聚乙二醇 甲基丙烯酸酯等）與末端異氰酸酯尿烷預聚物反應而得到 的，前述末端異氰酸酯尿烷預聚物是使聚酯型或聚醚型等 多元醇化合物和多元異氰酸酯化合物（例如2,4 -甲苯二異 氰酸酯、2,6-甲苯二異氰酸酯、1，3·二甲苯二異氰酸酯、 1,4-二甲苯二異氰酸酯、二苯基甲烷4,4-二異氰酸酯等） 反應而得到的。需要說明的是，在黏合劑層1 2 b中可以混 合選自上述樹脂中的2種以上。另外，以上列舉的黏合劑 的材料較佳者爲將表面自由能量設定爲40mJ/m2以下，而 201139604 且在分子結構中盡可能多地含有三氟甲基、二甲基甲矽烷 基、長鏈烷基等無極性基團。 需要說明的是，在黏合劑層12b的樹脂中，除配合對 基材膜12a照射放射線而使黏合劑層12b固化的放射線聚合 性化合物之外，也可以適當配合丙烯酸系黏合劑、光聚合 引發劑、固化劑來製備黏合劑。 使用光聚合引發劑時，可以使用例如：苯偶姻異丙醚 '苯偶姻異丁酸、二苯甲嗣、米氏嗣（Michler ketone) 、氯噻噸酮、十二烷基噻噸酮、二甲基噻噸酮、二乙基噻 噸酮、苄基二甲基縮酮、羥基環己基苯基酮、2-羥基 甲基苯基丙烷等。這些光聚合引發劑的配合量相對於丙烯 酸系共聚物100質量份，較佳者爲0.01〜5質量份》 需要說明的是，在上述實施方式中，對作爲切割管芯 焊接膜的晶圓加工用膠帶進行說明，但也可以應用於膠黏 膜。膠黏膜在脫模膜上具有由與上述實施方式同樣的膠黏 劑組合物形成的膠黏劑層。 作爲脫模膜，可使用例如：聚乙烯膜、聚丙烯膜、聚 丁烯膜、聚丁二烯膜、聚甲基戊烯膜、聚氯乙烯膜、氯乙 烯共聚物膜、聚對苯二甲酸乙二醇酯膜、聚萘二甲酸乙二 醇酯膜、聚對苯二甲酸丁二醇酯膜、聚氨酯膜、乙烯•醋 酸乙烯酯共聚物膜、離聚物樹脂膜、乙烯·（甲基）丙烯 酸共聚物膜、乙烯·（甲基）丙烯酸酯共聚物膜、聚苯乙 烯膜、聚碳酸酯膜、聚醯亞胺膜、氟樹脂膜等。另外，也 可使用它們的交聯膜。而且，可以爲它們的層疊膜。 -15- 201139604 脫模膜的表面張力較佳者爲40mN/m以下，更佳者爲 35mN/m以下。脫模膜的膜厚通常爲5〜300μηι，較佳者爲 10〜200μιη，特別佳者爲20〜150μιη左右。 膠黏膜可以在膠黏劑層上進一步包覆保護膜而使用。 該情況下，剝離膠黏劑層上的保護膜，例如在上述黏合劑 膜的黏合劑層上重疊露出的膠黏劑層後，從膠黏劑層剝離 上述膜，由此可以在黏合劑層上容易地設置膠黏劑層。作 爲上述保護膜，只要可以從上述膠黏劑層剝離，就沒有限 定，較佳者爲聚對苯二甲酸乙二醇酯膜、聚丙烯膜、聚乙 烯膜。另外，上述各保護膜較佳者爲對矽進行塗敷或燒結 。保護膜的厚度沒有特別限定，較佳者爲15〜125 μιη。 (晶圓加工用膠帶的使用方法） 在半導體裝置的製造步驟中，晶圓加工用膠帶10以如 下的方式使用。在圖2中例示了在晶圓加工用膠帶1 〇上貼 合有半導體晶圓1和環形架20的情形。首先，如圖2所示， 將黏合劑膜12的黏合劑層12b黏貼於環形架20，使半導體 晶圓1貼合於膠黏劑層1 3。其黏貼順序沒有限制，可以在 使半導體晶圓1貼合於膠黏劑層1 3後，再將黏合劑膜丨2的 黏合劑層12b黏貼於環形架20。另外，也可以同時進行黏 合劑膜12與環形架20的黏貼和半導體晶圓1與膠黏劑層13 的黏合。 進而，實施半導體晶圓1的切割步驟（圖3)，接著， 對黏合劑膜1 2實施照射能量射線、例如紫外線的步驟。具 S， -16- 201139604 體而言’爲了用切割刀片21切割半導體晶圓1和膠黏劑層 13 ’利用吸附台22從黏合劑膜12的下表面側吸附並支撐晶 圓加工用膠帶1 0。而且，利用切割刀片2 1將半導體晶圓1 和膠黏劑層13切割成2單元的半導體晶片並使其單片化， 其後’從黏合劑膜1 2的下麵側照射能量射線。通過該能量 射線照射，使黏合劑層12b固化，使其黏合力降低。需要 說明的是，可以取代能量射線的照射，而利用加熱等外部 刺激使黏合劑膜12的黏合劑層12b的黏合力降低。在黏合 劑層12b由兩層以上的黏合劑層層疊而構成的情況下，可 以通過能量射線照射使各黏合劑層內的一層或所有層固化 ，使各黏合劑層內的一層或所有層的黏合力降低。 其後，如圖4所示，實施將保持有切割成的半導體晶 片2及膠黏劑層13的黏合劑膜12沿環形架20的直徑方向和 圓周方向拉伸的擴展步驟。具體而言，對於保持有切割成 的多個半導體晶片2及膠黏劑層13的狀態的黏合劑膜12， 使中空圓柱形的頂出部件30從黏合劑膜12的下表面側上升 ，將黏合劑膜12沿環形架20的直徑方向或圓周方向拉伸。 通過擴展步驟，加寬了半導體晶片2之間的間隔’提高了 CCD照相機等對半導體晶片2的辨識性’同時’可以防止 在拾取時由於鄰接的半導體晶片2之間的接觸而產生的半 導體晶片2之間的再黏接。 實施擴展步驟後’如圖5所示，在擴展了黏合劑膜12 的狀態下直接實施拾取半導體晶片2的拾取步驟。具體而 言，從黏合劑膜1 2的下面側利用針3 1將半導體晶片2頂起 -17- 201139604 ，同時，從黏合劑膜12的上面側用吸附夾具32吸附半 晶片2，由此，將單片的半導體晶片2與膠黏劑層13 — 取。 進而，實施拾取步驟後，ΪΪ施管芯焊接步驟。具 言，利用在拾取步驟中與半導體晶片2 —同拾取的膠 層13，將半導體晶片2與導線架或封裝基板等黏接。 (實施例） 下面，對本發明的實施例進行說明，但本發明並 定於這些K施例。 (膠黏膜的製作） 在按照下述表1所示的方式配合的膠黏劑層組 1A〜1J中加入甲基乙基酮並進行攪拌混合，製作膠黏 漆。在剝離覆面層上以乾燥後的厚度爲5μηι、6μηι、 、18μιη、20μιη的方式塗抹製成的膠黏劑層組合物1 Α~ 膠黏劑清漆，在110 °C下乾燥3分鐘，在各個剝離覆面 製作膠黏劑層。接著，在各膠黏劑層上貼合與上述相 其它脫模膜，製作依次層疊有下述表2所示的實施例1 下述表3所示的比較例1〜7中的剝離覆面層、膠黏劑層 模P這3層構成的膠黏膜》 導體 起拾 體而 黏劑 不限 合物 劑清 7 μπι .1 J的 層上 同的 ~6及 和脫 -18- 201139604 表 1 膠黏劑層組合物 1A 1B 1C 1D 1E 1F 1G 1H 11 1J A1 (丙烯酸聚合物） 100 100 100 100 100 100 100 100 100 100 B1(環氧樹脂(固體)） 65 B2(環氧樹脂個體)） 68 B3(環氧樹脂(液態)） 17 34 34 51 13 14 B4(環氧樹脂讎)） 74 65 C1(固化齊！J1) 24 48 48 72 58 14 17 87 77 55 D1(固化促進劑） 0.3 0.6 0.6 0.9 0.9 0.2 0.21 1.15 1.1 0.9 El(二氧化矽塡料1) 53 300 60 468 E2(二氧化矽塡料2) 300 E3(二氧化矽塡料3) 130 130 60 130 表1中的各成分的配合比例的單位爲質量份。另外， 表1中的A1 (丙烯酸系聚合物）是重量平均分子量爲70萬 、玻璃化轉變溫度（Tg)爲6.1°的丙烯酸系共聚物。另 外’ B1 (環氧樹脂（固態））是環氧基當量爲223〜2 38的 萘型環氧樹脂。另外，B2(環氧樹脂（固態））是環氧基 當量爲265〜2 85的聯苯型環氧樹脂。另外，B3 (環氧樹脂 (液態））是環氧基當量爲165〜195的液態雙酚F型環氧樹 脂。另外’ B4 (環氧樹脂（液態））是環氧基當量爲 17 5〜19 0的液態雙酚A型環氧樹脂。另外，C1 (固化劑1 ) 是苯酚·亞聯苯基樹脂。另外，D 1 (固化促進劑）是咪唑 化合物（2 -苯基咪唑）。另外，E1 (二氧化矽塡料1)是 平均粒徑爲〇·5μιη的球狀合成二氧化矽，E2(二氧化矽塡 料2)是平均粒徑爲1.6 μΓη的球狀合成二氧化矽，E3 (二 氧化矽塡料3)是平均粒徑爲〇.〇45μηι的球狀合成二氧化矽 。需要說明的是’就二氧化矽塡料的平均粒徑而言，關於 -19- 201139604 E 1及E2，用鐳射衍射式細微性分佈測定裝置進行測定， 關於E3，利用比表面積分析（BET法）進行測定。 對於實施例1〜6及比較例1〜7分別進行厚度的測定、空 隙的評價、可靠性試驗的評價、翹曲的評價、剪切黏接力 的測定。另外，表2表示對實施例1〜6的各厚度的測定、空 隙的評價、可靠性試驗的評價、翹曲的評價、剪切黏接力 的測定，表3表示對比較例1〜7的各厚度的測定、空隙的評 價、可靠性試驗的評價、翹曲的評價、剪切黏接力的測定 表 2 實施例1 實施例2 實施例3 實施例4 實施例5 實施例6 組成 1A 1B 1C 1D 1G 11 厚度(μ™) 7 7 20 5 20 20 空隙 〇 〇 〇 〇 〇 〇 可靠性結果 〇 〇 〇 〇 〇 〇 翹曲 〇 〇 〇 〇 〇 〇 剪切黏接力 (MPa) 5 5 5 5 5 8 表3 比較例 1 比較例 2 比較例 3 比較例 4 比較例 5 比較例 6 比較例 7 組成 1A 1B 1C 1E 1F 1H 1J 厚度(μη〇 6 6 18 5 20 20 5 空隙 X X X - 〇 〇 - 可靠性結果 X X X - X X - 翹曲 〇 〇 〇 - 〇 X - 剪切黏接力 (MPa) 2 2 3 - 3 9 - -20- 201139604 <厚度的測定> 從膠黏膜上剝下脫模膜，使用ABS數顯千分錶（ DIGIMATICINDICATORS )(株式會社 Mitutoyo 公司製造 )測定剝離覆面層的厚度和由剝離覆面層及膠黏劑層構成 的層疊體的厚度，將從由剝離覆面層及膠黏劑層構成的層 疊體的厚度減去剝離覆面層的厚度所得的値設定爲膠黏劑 層的厚度。將測定的膠黏劑層的厚度示於表2及表3的“厚 度”的項中。另外，單位爲μηι。 <空隙的評價> 在加熱至70 °C的電熱板上以鏡面爲貼合面的方式朝上 放置6英寸的矽晶圓，在矽晶圓的鏡面上利用輥貼合以剝 離覆面層作爲支撐體，剝下了脫模膜的狀態下的膠黏膜， 利用目視觀測空隙是否產生。將觀測的評價結果示於表2 及表3的“空隙”的項。另外，樣品數爲3張。另外，將以 1 0mm以下的間隔產生空隙的樣品在所有樣品中即使是存 在1個的情況評價爲不良，用“ X”表示，將在所有樣品中 沒有以1 0mm以下的間隔產生空隙的情況評價爲良好，用 “〇”表示。 <可靠性試驗的評價> 在加熱至7〇°C的電熱板上放置ΙΟΟμιη厚度的矽晶圓， 在矽晶圓的硏磨面上利用輥貼合膠黏膜與黏合劑膜（株式 會社古河電工公司製造：UC-344EP-85)匹配的切割管芯 -21 - 201139604 焊接膜。用DAD3 40 (株式會社Disco公司製造）將矽晶圓 切割成1 0mm見方，形成晶片。其後，在基座晶圓的鏡面 上以130 °C /0.5 s/0.1 MPa焊接l〇mm見方的帶膠黏膜的晶片 。使用點鍍了 Ag後的42合金作爲基板。將在175。(：下鑄型 後（PKG:3mmt 3 0x3 0mmC] QFP208 )、在 175°C 下加熱固 化4小時的材料作爲樣品’各準備4個，在溫度85 °C、濕度 65%的氛圍中暴露168小時後（環境試驗、jeDEC LEVEL2 )’在準行了管芯焊接的晶片和基座晶圓的膠黏面上用超 聲波顯微鏡（SAT )觀察剝離的有無。將觀測的評價結果 示於表2及表3的“可靠性結果”的項。另外，將在所有樣 品中均沒有產生剝離的情況評價爲良好，用“〇”表示， 將在所有樣品中產生一個以上剝離的樣品的情況評價爲不 良，用“ X”表示。 <剪切黏接力的測定> 在加熱至70°C的電熱板上放置ΙΟΟμιη厚度的矽晶圓， 在矽晶圓的硏磨面上利用輥貼合以剝離覆面層爲支撐體、 剝下了脫模膜的狀態下的膠黏膜。其後，剝下剝離覆面層 ，在膠黏膜上黏貼黏合劑膜（株式會社古河電工公司製造 :UC-344EP-85)，用DAD340 (株式會社Disco公司製造 )將矽晶圓切割成5mm見方，形成晶片。其後，在基座晶 圓的鏡面上以1501/3 3/10(^£焊接5111111見方的帶膠黏膜的 晶片。作爲基座晶圓，使用將650 μΐτι厚度的矽晶圓用 DAD340 (株式會社Disco公司製造）切割成10mm見方的S -8 - 201139604 The formation is insufficient. When it is too high, the compatibility with other components is deteriorated, and as a result, the formation of the film is hindered. The epoxy resin is not particularly limited as long as it exhibits an adhesive action after curing and is liquid at room temperature, and a difunctional group or more, and preferably a weight average molecular weight of less than 5,000, more preferably less than 3,000 may be used. Epoxy resin. Further more preferably, an epoxy resin having a weight average molecular weight of 500 or more and particularly preferably 800 or more can be used. For example, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, alicyclic epoxy resin, aliphatic chain epoxy resin, novolak type epoxy resin , cresol novolac type epoxy resin, bisphenol A novolak type epoxy resin, diglycidyl ether of bisphenol, diglycidyl ether of naphthalenediol, diglycidyl ether of phenol, alcohol A diglycidyl ether compound and a difunctional epoxy resin such as an alkyl substituent, a halide or a hydride, and a novolac type epoxy resin. Further, a generally known epoxy resin such as a polyfunctional epoxy resin or a heterocyclic epoxy resin may be used. These epoxy resins may be used singly or in combination of two or more. Further, a component other than the epoxy resin may be contained as an impurity within a range that does not impair the properties. As the curing agent for the epoxy resin, for example, a phenol resin can be used. As the phenol resin, a condensate of a phenol such as an alkylphenol, a polyhydric phenol, a naphthol or a biphenylylene, and an aldehyde is used without particular limitation. The phenolic hydroxyl group contained in these phenolic resins can be easily reacted with an epoxy group of an epoxy resin by heating to form a cured product having high impact resistance. Among the phenolic resins, a novolak resin, an o-cresol phenol-9-201139604 aldehyde varnish resin, a p-cresol novolac resin, a tert-butyl phenol resin, a dicyclopentadiene cresol resin, a poly pair are preferably used. A vinyl phenol resin, a bisphenol A novolak resin, a phenol-biphenylene resin or a modified product thereof. As the other curing agent, a thermally active latent epoxy resin curing agent can also be used. The curing agent is a type of curing agent which does not react with an epoxy resin at room temperature and which is activated by a certain temperature or higher to activate an epoxy resin. As the activation method, there is a method of producing an active species (anion, a cation) by a chemical reaction caused by heating; stably dispersing in an epoxy resin at room temperature and compatibilizing and dissolving with an epoxy resin at a high temperature; A method of initiating a curing reaction; a method of dissolving and curing a curing agent at a high temperature by using a molecular sieve-sealed type curing agent; a method using a microcapsule, and the like. Examples of the thermally active latent epoxy resin curing agent include various key salts or dibasic acid diterpenoids, dicyandiamide, amine adduct curing agents, and high melting point active hydrogen compounds such as imidazole compounds. In addition, the adhesive layer 13 is preferably a curing agent containing 30 parts by mass or more and 145 parts by mass or less of the above epoxy resin and epoxy resin, based on 1 part by mass of the acrylic copolymer resin. Further, a curing accelerator or the like may be used as an auxiliary agent. The curing accelerator which can be used in the present invention is not particularly limited, and for example, a tertiary amine, an imidazole, a quaternary ammonium salt or the like can be used. The imidazoles which are preferably used in the present invention include, for example, 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, and diterpeneethyl- 2, phenylimidazole trimellitate, etc., and these may be used alone or in combination of two or more. Example of imidazoles -10- 201139604 It is commercially available under the trade names of 2E4MZ, 2PZ, 2PZ-CN, and 2PZ-CNS by Shikoku Chemical Industry Co., Ltd. Examples of the antimony include inorganic cerium such as cerium oxide, synthetic cerium oxide, cerium oxide, alumina, and glass sphere. The inorganic binder is not particularly limited, and examples thereof include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium citrate, magnesium citrate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, and aluminum borate. Whiskers, boron nitride, crystalline cerium oxide, amorphous cerium oxide, and the like. These materials may be used alone or in combination of two or more. In order to improve thermal conductivity, alumina, aluminum nitride, boron nitride, crystalline cerium oxide, amorphous cerium oxide, or the like is preferable. In view of the balance of characteristics, preferred is cerium oxide. The average particle diameter of the tantalum is 0.08 Χμηι or less (0.08 times or less of Χμηη) with respect to the thickness 胶μηη of the adhesive layer 13. Thus, the average particle diameter of the dip material is sufficiently small with respect to the thickness of the adhesive layer 13, so that it is possible to prevent air from being trapped when the adhesive layer 13 is adhered to the semiconductor wafer 1, thereby generating voids. Here, when the average particle diameter of the coating material is 0.08 Χμηι with respect to the thickness 胶μηι of the adhesive layer 13, the overall small diameter 'is poor in fluidity when adhered to the semiconductor wafer 1, but in the present invention' An epoxy resin which is liquid at room temperature is used as a heat curing component, and therefore, it can be easily adhered to the semiconductor wafer 1. Moreover, in order to make the interface between different kinds of materials well bonded, a coupling agent can also be blended. The coupling agent' is preferably a decane coupling agent. As the decane coupling agent, 'r-glycidoxypropyltrimethoxy fluorene, r-mercaptopropyltrimethoxydecane, r-aminopropyltriethoxydecane, -11 - 201139604 R-ureidopropyltriethoxydecane, N-non-aminoethyl-aminopropyltrimethoxydecane, and the like. With respect to the compounding amount of the coupling agent, from the viewpoint of the effect of addition or heat resistance and cost, it is preferable to add 01 to 10 mass with respect to 100 parts by mass in total of each composition forming the dispersed phase and the continuous phase. Share. In addition, the varnished solvent is preferably a methyl ethyl ketone having a relatively low boiling point, acetone, methyl isobutyl ketone, 2-ethoxyethanol, toluene, butyl cellosolve, methanol, ethanol, 2-methoxyl. Ethanol and the like. Further, a high boiling point solvent can be added for the purpose of improving coating properties and the like. The high boiling point solvent may, for example, be dimethylacetamide, dimethylformamide, methylpyrrolidone or cyclohexanone. The thickness of the adhesive layer 13 is preferably about 5 to 20 μπι. (Binder Film) The adhesive film 1 2 is not particularly limited as long as the semiconductor wafer 1 is diced (see FIG. 3 described later), and has sufficient adhesive force to prevent the semiconductor wafer 1 from being peeled off. When the single-chip semiconductor wafer 2 is picked up (refer to FIG. 5 described later), a low adhesion force that can be easily peeled off from the adhesive layer 13 can be displayed. For example, a binder film having the adhesive layer 12b on the base film 12a is preferably used. The base film 1 2a of the adhesive film 1 2 can be used without any particular limitation as long as it is a conventionally known base film. However, when a radiation curable material is used as the adhesive agent 1 2b to be described later, it is preferred. A substrate film having radioelasticity is used. -12- 201139604 For example, as a material thereof, polyethylene, polypropylene, ethylene/propylene copolymer 'polybutene-1, poly-4-methylpentene-1, ethylene-vinyl acetate copolymer, Homopolymer or copolymer of olefins such as ethylene-ethyl acrylate copolymer, ethylene-methyl acrylate copolymer, ethylene-acrylic acid copolymer, ionomer or the like, or a mixture thereof, polyurethane, styrene, ethylene-butene or pentane A thermoplastic elastomer such as an olefin copolymer or a polyamine-polyol copolymer, or a mixture thereof. Further, the base film 12a may be a mixture of two or more materials selected from the above group, and the base film may be a single layer or a plurality of base film. The thickness of the base film 12a is not particularly limited and may be appropriately set, and is preferably 50 to 200 μm. The resin used in the adhesive layer 12b of the adhesive film 12 is not particularly limited, and it has a degree of retention when the adhesive layer 13 and the semiconductor wafer 1 are not peeled off during expansion (see FIG. 4 described later). In the case of picking up (refer to FIG. 5 described later), it is preferable to have a property of being easily peeled off from the adhesive layer 13. In order to improve the pick-up property, the adhesive layer 12b is preferably a radiation-curable adhesive layer. Preferred are, for example, known chlorinated polypropylene resins, acrylic resins, polyester resins, urethane resins, epoxy resins, addition-reactive organic polyoxyalkylene resins, oxime acrylate resins, which are used in the adhesive. Ethylene-vinyl acetate copolymer, ethylene-ethyl acrylate copolymer, ethylene-methyl acrylate copolymer, ethylene/acrylic acid copolymer, polyisoprene or styrene butadiene copolymer or its hydride A binder is prepared by appropriately blending a radiation polymerizable compound with an elastomer or the like in a mixture thereof. In addition, -13- 201139604 can be added to various surfactants or surface smoothing agents. The thickness of the adhesive layer 1 2b can be appropriately set without particular limitation, and is preferably 5 to 30 μm. As the polymerizable compound, for example, a low molecular weight compound having at least two photopolymerizable carbon-carbon double bonds in a molecule which can be three-dimensionally networked by light irradiation or a photopolymerizable carbon-carbon double bond group on a substituent can be used. a polymer or oligomer of a group. Specifically, trimethylolpropane triacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate, 1,4-butanediol diacrylate, A copolymer of acrylic acid or various acrylates such as hydrazine acrylate, such as 1,6-hexanediol diacrylate, polyethylene glycol diacrylate or oligomeric acrylate. Further, in addition to the acrylate-based compound as described above, a urethane acrylate-based oligomer can also be used. The urethane acrylate oligomer is an acrylate or methacrylate having a hydroxyl group (for example, 2-hydroxyethyl acrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl acrylate, methyl group) The terminal isocyanate urethane prepolymer is obtained by reacting 2-hydroxypropyl acrylate, polyethylene glycol acrylate, polyethylene glycol methacrylate, etc. with a terminal isocyanate urethane prepolymer. Polyol compound such as polyether type or polyether type and polyisocyanate compound (for example, 2,4-toluene diisocyanate, 2,6-toluene diisocyanate, 1,3-xylene diisocyanate, 1,4-xylene diisocyanate, two Phenylmethane 4,4-diisocyanate, etc.) obtained by reaction. In addition, two or more types selected from the above resins may be mixed in the binder layer 1 2 b. Further, the material of the above-mentioned binder is preferably such that the surface free energy is set to 40 mJ/m 2 or less, and 201139604 and contains as much trifluoromethyl, dimethylformamidine, and long chain as possible in the molecular structure. A non-polar group such as an alkyl group. In the resin of the adhesive layer 12b, in addition to the radiation polymerizable compound which irradiates the base film 12a with radiation to cure the adhesive layer 12b, an acrylic adhesive or photopolymerization may be appropriately blended. A curing agent is prepared by using a curing agent. When a photopolymerization initiator is used, for example, benzoin isopropyl ether 'benzoin isobutyric acid, benzamidine, Michler ketone, chlorothioxanthone, dodecyl thioxanthone can be used. , dimethyl thioxanthone, diethyl thioxanthone, benzyl dimethyl ketal, hydroxycyclohexyl phenyl ketone, 2-hydroxymethyl phenyl propane, and the like. The amount of the photopolymerization initiator to be added is preferably 0.01 to 5 parts by mass based on 100 parts by mass of the acrylic copolymer. In the above embodiment, wafer processing as a cut die solder film is performed. It is described with tape, but it can also be applied to the adhesive film. The adhesive film has an adhesive layer formed of the same adhesive composition as that of the above embodiment on the release film. As the release film, for example, a polyethylene film, a polypropylene film, a polybutene film, a polybutadiene film, a polymethylpentene film, a polyvinyl chloride film, a vinyl chloride copolymer film, or a polyparaphenylene can be used. Ethylene glycolate film, polyethylene naphthalate film, polybutylene terephthalate film, polyurethane film, ethylene vinyl acetate copolymer film, ionomer resin film, ethylene (a A) acrylic copolymer film, an ethylene/(meth)acrylate copolymer film, a polystyrene film, a polycarbonate film, a polyimide film, a fluororesin film, or the like. In addition, crosslinked films of these can also be used. Moreover, it may be a laminated film of them. -15- 201139604 The surface tension of the release film is preferably 40 mN/m or less, and more preferably 35 mN/m or less. The film thickness of the release film is usually from 5 to 300 μm, preferably from 10 to 200 μm, particularly preferably from about 20 to 150 μm. The adhesive film can be further coated with a protective film on the adhesive layer. In this case, the protective film on the adhesive layer is peeled off, for example, by adhering the exposed adhesive layer to the adhesive layer of the adhesive film, and then peeling off the film from the adhesive layer, thereby being able to be in the adhesive layer. The adhesive layer is easily set on the top. The protective film is not particularly limited as long as it can be peeled off from the above adhesive layer, and is preferably a polyethylene terephthalate film, a polypropylene film or a polyethylene film. Further, it is preferable that each of the above protective films is coated or sintered. The thickness of the protective film is not particularly limited, and is preferably 15 to 125 μm. (Method of Using Tape for Wafer Processing) In the manufacturing process of the semiconductor device, the wafer processing tape 10 is used as follows. Fig. 2 illustrates a case where the semiconductor wafer 1 and the ring frame 20 are bonded to the wafer processing tape 1 . First, as shown in Fig. 2, the adhesive layer 12b of the adhesive film 12 is adhered to the ring frame 20, and the semiconductor wafer 1 is bonded to the adhesive layer 13. The order of the adhesive is not limited, and the adhesive layer 12b of the adhesive film 2 can be adhered to the ring frame 20 after the semiconductor wafer 1 is bonded to the adhesive layer 13. Alternatively, the adhesion of the adhesive film 12 to the ring frame 20 and the adhesion of the semiconductor wafer 1 to the adhesive layer 13 may be performed simultaneously. Further, a dicing step (FIG. 3) of the semiconductor wafer 1 is performed, and then the adhesive film 1 2 is irradiated with an energy ray such as ultraviolet ray. With the S, -16-201139604, in order to cut the semiconductor wafer 1 and the adhesive layer 13' with the dicing blade 21, the adsorption processing table 22 adsorbs and supports the wafer processing tape 1 from the lower surface side of the adhesive film 12. 0. Further, the semiconductor wafer 1 and the adhesive layer 13 are cut into a two-unit semiconductor wafer by the dicing blade 2 1 and singulated, and then the energy ray is irradiated from the lower surface side of the adhesive film 12. By the irradiation of the energy ray, the adhesive layer 12b is cured to lower the adhesive force. It is to be noted that, instead of the irradiation of the energy ray, the adhesion of the adhesive layer 12b of the adhesive film 12 can be lowered by external stimuli such as heating. In the case where the adhesive layer 12b is composed of two or more adhesive layers, one or all layers in each adhesive layer can be cured by energy ray irradiation to make one or all layers in each adhesive layer. The adhesion is reduced. Thereafter, as shown in Fig. 4, an expansion step of stretching the adhesive film 12 holding the cut semiconductor wafer 2 and the adhesive layer 13 in the diameter direction and the circumferential direction of the ring frame 20 is carried out. Specifically, the adhesive film 12 in a state in which the plurality of semiconductor wafers 2 and the adhesive layer 13 are cut is held, and the hollow cylindrical ejection member 30 is lifted from the lower surface side of the adhesive film 12, and The adhesive film 12 is stretched in the diameter direction or the circumferential direction of the ring frame 20. By the expansion step, the interval between the semiconductor wafers 2 is widened 'increasing the visibility of the semiconductor wafer 2 by the CCD camera or the like' while preventing the semiconductor wafer generated by the contact between the adjacent semiconductor wafers 2 at the time of pickup. Re-bonding between 2. After the expansion step is carried out, as shown in Fig. 5, the pickup step of picking up the semiconductor wafer 2 is directly performed in a state where the adhesive film 12 is expanded. Specifically, the semiconductor wafer 2 is lifted from the lower surface side of the adhesive film 12 by the needle 31 to -17 to 201139604, and the half wafer 2 is adsorbed from the upper surface side of the adhesive film 12 by the adsorption jig 32, whereby A single piece of semiconductor wafer 2 is taken with the adhesive layer 13. Further, after the picking step is performed, the die bonding step is performed. In other words, the semiconductor wafer 2 is bonded to a lead frame or a package substrate or the like by using the adhesive layer 13 picked up together with the semiconductor wafer 2 in the pickup step. (Embodiment) Hereinafter, an embodiment of the present invention will be described, but the present invention is also applied to these K examples. (Production of Adhesive Film) Methyl ethyl ketone was added to the adhesive layer groups 1A to 1J which were blended in the manner shown in Table 1 below, and the mixture was stirred and mixed to prepare an adhesive varnish. The adhesive layer composition 1 Α~ adhesive varnish was applied to the peeling coating layer at a thickness of 5 μm, 6 μm, 18 μm, and 20 μm after drying, and dried at 110 ° C for 3 minutes. The adhesive layer is peeled off to make an adhesive layer. Next, the other release film of the above-mentioned phase was bonded to each of the adhesive layers, and the peeled coating layers of Comparative Examples 1 to 7 shown in Table 1 below, which are shown in Table 2 below, were laminated in this order. Adhesive layer mold P consists of three layers of adhesive film. The conductor picks up the body and the adhesive is not clear. The layer is the same as the layer of ~7 and the off-18-201139604. Adhesive layer composition 1A 1B 1C 1D 1E 1F 1G 1H 11 1J A1 (acrylic polymer) 100 100 100 100 100 100 100 100 100 100 B1 (epoxy resin (solid)) 65 B2 (epoxy resin) 68 B3 (epoxy resin (liquid)) 17 34 34 51 13 14 B4 (epoxy resin)) 74 65 C1 (cured together! J1) 24 48 48 72 58 14 17 87 77 55 D1 (curing accelerator) 0.3 0.6 0.6 0.9 0.9 0.2 0.21 1.15 1.1 0.9 El (cerium oxide material 1) 53 300 60 468 E2 (cerium dioxide material 2) 300 E3 (cerium dioxide material 3) 130 130 60 130 The components in Table 1 The unit of the proportion is the mass part. Further, A1 (acrylic polymer) in Table 1 is an acrylic copolymer having a weight average molecular weight of 700,000 and a glass transition temperature (Tg) of 6.1. Further, 'B1 (epoxy resin (solid)) is a naphthalene type epoxy resin having an epoxy group equivalent of 223 to 2 38. Further, B2 (epoxy resin (solid)) is a biphenyl type epoxy resin having an epoxy group equivalent of 265 to 2 85. Further, B3 (epoxy resin (liquid)) is a liquid bisphenol F type epoxy resin having an epoxy equivalent of 165 to 195. Further, 'B4 (epoxy resin (liquid)) is a liquid bisphenol A type epoxy resin having an epoxy equivalent of 17 5 to 19 0. Further, C1 (curing agent 1) is a phenol·biphenylene resin. Further, D 1 (curing accelerator) is an imidazole compound (2-phenylimidazole). Further, E1 (cerium oxide material 1) is a spherical synthetic cerium oxide having an average particle diameter of 〇·5 μm, and E2 (cerium dioxide material 2) is a spherical synthetic cerium oxide having an average particle diameter of 1.6 μΓη. E3 (cerium dioxide material 3) is a spherical synthetic cerium oxide having an average particle diameter of 〇.〇45μηι. In addition, regarding the average particle diameter of the cerium oxide material, about -19-201139604 E 1 and E2, the measurement is performed by a laser diffraction type fineness distribution measuring apparatus, and regarding E3, the specific surface area analysis (BET method) is used. ) Perform the measurement. For each of Examples 1 to 6 and Comparative Examples 1 to 7, thickness measurement, void evaluation, reliability test evaluation, warpage evaluation, and shear adhesion measurement were performed. In addition, Table 2 shows the measurement of each thickness of Examples 1 to 6, the evaluation of the voids, the evaluation of the reliability test, the evaluation of the warpage, and the measurement of the shear adhesion, and Table 3 shows the comparison of each of Comparative Examples 1 to 7. Measurement of thickness, evaluation of voids, evaluation of reliability test, evaluation of warpage, measurement of shear bond strength Table 2 Example 1 Example 2 Example 3 Example 4 Example 5 Example 6 Composition 1A 1B 1C 1D 1G 11 Thickness (μTM) 7 7 20 5 20 20 Void 〇〇〇〇〇〇 Reliability Results 〇〇〇〇〇〇 Warpage 〇〇〇〇〇〇 Shear Adhesion (MPa) 5 5 5 5 5 8 Table 3 Comparative Example 1 Comparative Example 2 Comparative Example 3 Comparative Example 4 Comparative Example 5 Comparative Example 6 Comparative Example 7 Composition 1A 1B 1C 1E 1F 1H 1J Thickness (μη〇6 6 18 5 20 20 5 void XXX - 〇〇 - reliability Results XXX - XX - warp 〇〇〇 - 〇X - shear adhesion (MPa) 2 2 3 - 3 9 - -20- 201139604 <Measurement of thickness> Stripping the release film from the adhesive film, use ABS digital display dial gauge (DIGIMATICINDICATORS) (manufactured by Mitutoyo Co., Ltd.) The thickness of the cover layer and the thickness of the laminate composed of the release coating layer and the adhesive layer are set from the thickness of the laminate including the release coating layer and the adhesive layer minus the thickness of the release coating layer. The thickness of the adhesive layer is shown in the "thickness" of Table 2 and Table 3. In addition, the unit is μηι. <Evaluation of voids> Heating to 70 ° On the hot plate of C, a 6-inch silicon wafer was placed with the mirror surface as the bonding surface, and the surface of the silicon wafer was bonded by a roller to peel off the cladding layer as a support, and the release film was peeled off. The adhesive film was observed by visual observation of whether or not voids were generated. The evaluation results of the observations are shown in the items of "voids" in Tables 2 and 3. In addition, the number of samples was three, and voids were formed at intervals of 10 mm or less. The sample was evaluated as defective even in the case where there was one in all the samples, and it was indicated by "X" that the voids were not formed at intervals of 10 mm or less in all the samples, and it was evaluated as "〇". Evaluation of reliability test & Gt ΙΟΟ ι ι 厚度 的 的 的 的 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热344EP-85) Matched Cutting Die-21 - 201139604 Welding Film. The wafer was cut into 10 mm squares using DAD3 40 (manufactured by Disco Co., Ltd.) to form a wafer. Thereafter, a 100 mm thin film of the adhesive film was soldered on the mirror surface of the susceptor wafer at 130 ° C / 0.5 s / 0.1 MPa. A 42 alloy in which Ag was plated was used as a substrate. Will be at 175. (: After the lower mold (PKG: 3mmt 3 0x3 0mmC) QFP208), the material which was heat-cured at 175 ° C for 4 hours was prepared as four samples, and each was exposed to an atmosphere at a temperature of 85 ° C and a humidity of 65%. After the hour (environmental test, jeDEC LEVEL2), the presence or absence of peeling was observed by an ultrasonic microscope (SAT) on the adhesive surface of the die-bonded wafer and the susceptor wafer. The evaluation results of the observation are shown in Table 2 and The item of "reliability result" in Table 3. In addition, the case where peeling did not occur in all the samples was evaluated as good, and it was represented by "〇", and the case where one or more peeled samples were produced in all the samples was evaluated as bad. It is indicated by "X". <Measurement of Shear Adhesion Force> A silicon wafer having a thickness of ΙΟΟμηη was placed on a hot plate heated to 70 ° C, and bonded by a roll on the honing surface of the ruthenium wafer. The coating layer is a support and the adhesive film is peeled off. Then, the peeling coating layer is peeled off, and a binder film is adhered to the adhesive film (manufactured by Furukawa Electric Co., Ltd.: UC-344EP-85) , using DAD340 (Disco Corporation) The wafer is cut into 5mm squares to form a wafer. Thereafter, the wafer with the adhesive film is soldered at 1501/3 3/10 on the mirror surface of the pedestal wafer. A 650 μΐτι thick tantalum wafer was cut into 10 mm square using DAD340 (manufactured by Disco Co., Ltd.).
-22- S 201139604 基座晶圓。其後，將在1 7 5 °C下進行加熱固化4小時的基座 晶圓作爲樣品，各準備1 〇個，使用萬能膠接試驗器系列 4000 (株式會社Arctec公司製造），在265 °C下測定剪切 黏接力，得到平均値。將所得的剪切黏接力的平均値示於 表2及表3的“剪切黏接力”的項。另外’單位爲MPa ° <翹曲的評價> 在加熱至70°c的電熱板上放置ΙΟΟμιη厚度的矽晶圓’ 在矽晶圓的硏磨面上利用輥貼合以剝離覆面層作爲支撐體 、剝下了脫模膜的狀態下的膠黏膜。其後’剝下剝離覆面 層，在膠黏膜上黏貼黏合劑膜（株式會社古河電工公司製 造：UC-344EP-85)，用DAD340 C株式會社Disco公司製 造）將矽晶圓切割成5mm見方’形成晶片。其後’將在 14mm見方、Ι25μιη厚度的銅版上層疊有帶膠黏膜的晶片的 材料作爲樣品’各準備5個，測定在175 °C下加熱處理4小 時前後的厚度之差，進行翹曲的評價。將評價結果示於表 2及表3的“翹曲”的項。另外’將測定的厚度之差爲 5〇μιη以上的樣品在所有樣品中存在一個以上的情況評價 爲不良，用“ X ”表示，將測定的厚度之差在所有樣品中 低於5 0 μπι的情況評價爲良好，用“〇”表示。 如表2所示，就實施例1的膠黏劑層而言’相對於厚度 Χ(=7) μηι，所配合的塡料的粒徑爲〇·〇8Χ(=0·56) μιη以 下的0.5μιη，因此，可得到未產生空隙、翹曲低於5〇μιη的 良好的結果，可以得到剪切黏接力爲5MPa的這樣大的値 -23- 201139604 。因此’可靠性試驗也可得到良好的結果。另外，相對於 丙嫌酸系共聚樹脂100質量份，環氧樹脂及固化劑爲41質 量份’在30質量份以上145質量份以下的範圍內。 就實施例2的膠黏劑層而言，相對於厚度X ( =7 ) μηι ’所配合的塡料的粒徑爲〇·〇8Χ(=0.56) μιη以下的0·5μιη ’因此’可得到未產生空隙、翹曲低於50μπι的良好的結 果。可以得到剪切黏接力爲5MPa的這樣大的値。因此， 可靠性試驗也可得到良好的結果。另外，相對於丙烯酸系 共聚樹脂100質量份，環氧樹脂及固化劑爲82質量份，在 3〇質量份以上145質量份以下的範圍內》 就實施例3的膠黏劑層而言，相對於厚度X ( =20) μηι ’所配合的塡料的粒徑爲〇·〇8Χ(=1·6) μιη以下的1.6μηι ’因此’可得到未產生空隙、翹曲也低於50μηι的良好的 結果。可以得到剪切黏接力爲5MPa的這樣大的値。因此 ’可靠性試驗也可得到良好的結果。另外，相對於丙烯酸 系共聚樹脂100質量份，環氧樹脂及固化劑爲82質量份， 在3 0質量份以上145質量份以下的範圍內。 就實施例4的膠黏劑層而言，相對於厚度X (=5) μιη ’所配合的塡料的粒徑爲0.08Χ ( =0.40 ) μηι以下的 〇·〇45μπι’因此，可得到未產生空隙、翹曲低於5〇μηι的良 好的結果。可以得到剪切黏接力爲5 Μ P a的這樣大的値。 因此，可靠性試驗也可得到良好的結果。另外，相對於丙 烯酸系共聚樹脂100質量份’環氧樹脂及固化劑爲123質量 份’在30質量份以上145質量份以下的範圍內。 -24- 201139604 就實施例5的膠黏劑層而言，相對於厚度X ( =20 ) μιη ’所配合的塡料的粒徑爲0.08Χ(=1.6) μιη以下的 〇·〇45μιη’因此，可得到未產生空隙、翹曲低於50μπα的良 好的結果。可以得到剪切黏接力爲5MPa的這樣大的値。 因此’可靠性試驗也可得到良好的結果。另外，相對於丙 烯酸系共聚樹脂100質量份，環氧樹脂及固化劑爲31質量 份’在30質量份以上145質量份以下的範圍內。 就實施例6的膠黏劑層而言，相對於厚度X ( =20 ) μιη ’所配合的塡料的粒徑爲〇.〇8Χ(=1.6) μηι以下的1.6Mm ’因此’可得到未產生空隙、翹曲低於50μ!η的良好的結 果。可以得到剪切黏接力爲8MPa的這樣大的値。因此， 可靠性試驗也可得到良好的結果。另外，相對於丙烯酸系 共聚樹脂100質量份，環氧樹脂及固化劑爲142質量份，在 3〇質量份以上145質量份以下的範圍內。 另一方面，如表3所示，就比較例1的膠黏劑層而言， 相對於厚度X( =6) μιη，所配合的塡料的粒徑爲大於 0.08Χ ( =0.48 ) μπι的0.5μιη，因此，產生了空隙，剪切黏 接力爲2MPa的這樣小的値。因此，在可靠性試驗中產生 剝離。 就比較例2的膠黏劑層而言，相對於厚度X (=6) μΐΏ ’所配合的塡料的粒徑爲大於〇.〇8Χ(=0.48) μηι的〇·5μηι ’因此，產生空隙，剪切黏接力爲2MPa的這樣小的値。 因此’在可靠性試驗中產生剝離。 就比較例3的膠黏劑層而言，相對於厚度X ( =1 8 ) μηι -25- 201139604 ’所配合的塡料的粒徑爲大於〇.〇8Χ(=1.44) μπι的1.6μιη ，因此’產生空隙，剪切黏接力爲3MPa的這樣小的値。 因此’在可靠性試驗中產生剝離。 關於比較例4的膠黏劑層，環氧樹脂使用固態的物質 ，因此，貼合時的膠黏劑層的流動性差，不能將膠黏膜貼 合於矽晶圆。 就比較例5的膠黏劑層而言，相對於厚度X ( =20 ) μπι ，所配合的塡料的粒徑爲〇.〇8Χ(=1·6) μπι以下的〇·5μηι ’因此’可得到未產生空隙、翹曲爲不足50 μιη的良好的 結果。但是，相對於丙烯酸系共聚樹脂100質量份、環氧 樹脂及固化劑爲27質量份，不在30質量份以上145質量份 以下的範圍內，所以，剪切黏接力也爲3 MPa的這樣低的 値。因此，在可靠性試驗中產生剝離。 就比較例6的膠黏劑層而言，相對於厚度X ( =2 0) μπι ，所配合的塡料的粒徑爲0.08Χ(=1.6) μιη以下的0·5μιη ，因此，不產生空隙，剪切黏接力爲8MPa的這樣大的値 。但是’相對於丙烯酸系共聚樹脂100質量份，環氧樹脂 及固化劑爲27質量份，不在30質量份以上145質量份以下 的範圍內，所以，翹曲變大，爲50μιη以上。因此，在可 靠性試驗中產生剝離。 關於比較例7的膠黏劑層，在璆氧樹脂中使用固態的 物質，因此，貼合時的膠黏劑層的流動性差，不能使膠黏 膜貼合於矽晶圓。 由表2及表3的結果得知，通過以相對於膠黏劑層的厚 -26- 201139604 度Χμηι，塡料的粒徑爲〇.〇8Χμιη以下的方式製作膠黏膜， 可防止膠黏膜和晶圓貼合時的空隙，可得到翹曲少、膠黏 可靠性高的膠黏膜。而且得知，通過相對於丙烯酸系共聚 樹脂100質量份，環氧樹脂及固化劑爲30質量份以上145質 量份以下的範圍內’可得到膠黏可靠性高的膠黏膜。 【圖式簡單說明】 圖1係模式顯示相關於本發明的實施型態的晶圓加工 用膠帶的構成的剖面圖。 圖2模式顯示在晶圓加工用膠帶上貼合半導體晶圓及 晶圓環的狀態的說明圖。 圖3係供模式說明切割步驟的說明圖。 圖4係供模式說明擴展步驟的說明圖。 圖5係供模式說明拾取步驟的說明圖。 【主要元件符號說明】 1 :半導體晶圓 2 :半導體晶片 1 0 :晶圓加工用膠帶 12a :基材膜 1 2 b :黏合劑層 1 2 :黏合劑膜 1 3 :膠黏劑層 20 :環形架 -27- 201139604 2 1 :切割板 22 :吸附台 3 0 :頂出部件 31 :針 3 2 :吸附夾具-22- S 201139604 pedestal wafer. Then, the susceptor wafer which was heat-cured at 175 ° C for 4 hours was used as a sample, and each of them was prepared one by one, and the universal bonding tester series 4000 (manufactured by Arctec Co., Ltd.) was used at 265 ° C. The shear bond strength was measured to obtain an average enthalpy. The average enthalpy of the resulting shear adhesion is shown in the items of "shear adhesion" in Tables 2 and 3. In addition, 'unit is MPa ° < evaluation of warpage> 矽 ι η 厚度 在 电 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 ΙΟΟ ΙΟΟ ΙΟΟ ΙΟΟ ΙΟΟ ΙΟΟ ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' The support and the adhesive film in a state in which the release film is peeled off. Thereafter, the release coating layer was peeled off, and a pressure-sensitive adhesive film (manufactured by Furukawa Electric Co., Ltd.: UC-344EP-85) was used, and the wafer was cut into 5 mm squares by DAD340 C Co., Ltd. A wafer is formed. Then, five materials were prepared by laminating a material of a wafer having an adhesive film on a copper plate having a thickness of 14 mm square and a thickness of 25 μm as a sample, and the difference in thickness between the heat treatment at 175 ° C for 4 hours was measured, and warpage was performed. Evaluation. The evaluation results are shown in the items of "warpage" in Tables 2 and 3. In addition, the case where the sample having a difference in thickness of 5 〇 μm or more is present in all of the samples is evaluated as defective, and is represented by "X", and the difference in thickness measured is less than 50 μm in all the samples. The situation was evaluated as good and indicated by "〇". As shown in Table 2, with respect to the adhesive layer of Example 1, the particle size of the mixed material was '〇·〇8Χ(=0·56) μιη or less with respect to the thickness Χ(=7) μηι. Since 0.5 μm is obtained, good results are obtained in which voids are not generated and warpage is less than 5 μm, and such a large 値-23-201139604 having a shear adhesion of 5 MPa can be obtained. Therefore, the reliability test can also give good results. In addition, the epoxy resin and the curing agent are 41 parts by mass in terms of 30 parts by mass or more and 145 parts by mass or less based on 100 parts by mass of the acrylic acid-based copolymer resin. With respect to the adhesive layer of Example 2, the particle size of the tantalum compound with respect to the thickness X (=7) μηι ' is 0·5 μιη '因此' of 〇·〇8Χ (=0.56) μηη or less Good results were obtained without voids and warpage below 50 μm. Such a large ruthenium having a shear adhesion of 5 MPa can be obtained. Therefore, the reliability test can also give good results. In addition, the epoxy resin and the curing agent are in an amount of from 82 parts by mass to 145 parts by mass or less based on 100 parts by mass of the acrylic copolymer resin, and the adhesive layer of the third embodiment is relatively The particle size of the tantalum compound to which the thickness X (=20) μηι ' is 1.6·〇8Χ(=1·6) μηη or less 1.6μηι 'so' can be obtained without voids and warp below 50μηι the result of. Such a large ruthenium having a shear adhesion of 5 MPa can be obtained. Therefore, the reliability test can also give good results. In addition, the epoxy resin and the curing agent are 82 parts by mass, and are contained in the range of 30 parts by mass or more and 145 parts by mass or less with respect to 100 parts by mass of the acrylic copolymer resin. In the adhesive layer of Example 4, the particle size of the tantalum mixed with respect to the thickness X (=5) μηη is 0.08 Χ (=0.40) μηι or less 〇·〇45μπι', thus obtaining Good results were produced with voids and warpage below 5 〇μηι. Such a large enthalpy with a shear adhesion of 5 Μ P a can be obtained. Therefore, the reliability test can also give good results. In addition, the amount of the epoxy resin and the curing agent is 123 parts by mass in an amount of 30 parts by mass or more and 145 parts by mass or less based on 100 parts by mass of the acrylic copolymer resin. -24- 201139604 In the adhesive layer of Example 5, the particle size of the tantalum mixed with respect to the thickness X (=20) μη ' is 0.08 Χ (=1.6) μηη or less 〇·〇45μιη' Good results were obtained in which voids were not generated and warpage was less than 50 μπα. Such a large ruthenium having a shear adhesion of 5 MPa can be obtained. Therefore, the reliability test can also give good results. In addition, the epoxy resin and the curing agent are 31 parts by mass in terms of 30 parts by mass or more and 145 parts by mass or less based on 100 parts by mass of the acrylic copolymer resin. With respect to the adhesive layer of Example 6, the particle size of the tantalum compounded with respect to the thickness X (=20) μηη is 1.6 Mm of the 〇.〇8Χ(=1.6) μηι or less 'so' Good results were produced with voids and warpage below 50 μ!η. Such a large enthalpy with a shear adhesion of 8 MPa can be obtained. Therefore, the reliability test can also give good results. In addition, the epoxy resin and the curing agent are 142 parts by mass based on 100 parts by mass of the acrylic copolymer resin, and are in the range of 3 parts by mass or more and 145 parts by mass or less. On the other hand, as shown in Table 3, with respect to the adhesive layer of Comparative Example 1, the particle size of the compounded tanning material was greater than 0.08 Χ (=0.48) μπι with respect to the thickness X (=6) μηη. 0.5 μm, therefore, voids were generated, and the shear adhesion was such a small enthalpy of 2 MPa. Therefore, peeling occurred in the reliability test. In the adhesive layer of Comparative Example 2, the particle size of the tantalum compound with respect to the thickness X (=6) μΐΏ ' is larger than 〇·〇8Χ(=0.48) μηι 〇·5μηι ', thus creating voids , such a small flaw of shear adhesion of 2 MPa. Therefore, peeling occurred in the reliability test. With respect to the adhesive layer of Comparative Example 3, the particle size of the tantalum compound with respect to the thickness X (= 18) μηι -25 - 201139604 ' is greater than μ.〇8Χ (=1.44) μπι 1.6 μιη, Therefore, a void is generated, and the shear bond strength is such a small enthalpy of 3 MPa. Therefore, peeling occurred in the reliability test. In the adhesive layer of Comparative Example 4, since the epoxy resin used a solid substance, the adhesive layer at the time of bonding was poor in fluidity, and the adhesive film could not be bonded to the tantalum wafer. With respect to the adhesive layer of Comparative Example 5, with respect to the thickness X (=20) μπι, the particle size of the mixed material is 〇·〇8Χ(=1·6) μπι or less 〇·5μηι ' Good results were obtained in which voids were not generated and the warpage was less than 50 μm. However, the amount of the epoxy resin and the curing agent is not more than 30 parts by mass and not more than 145 parts by mass, and the shear adhesive strength is also as low as 3 MPa. value. Therefore, peeling occurred in the reliability test. With respect to the adhesive layer of Comparative Example 6, the particle size of the compounded material was 0.05 Å (=1.6) μηη or less, and therefore no void was formed with respect to the thickness X (=2 0) μπι. , such a large 剪切 with a shear adhesion of 8 MPa. However, the amount of the epoxy resin and the curing agent is not more than 30 parts by mass and not more than 145 parts by mass based on 100 parts by mass of the acrylic copolymer resin. Therefore, the warpage is increased to 50 μm or more. Therefore, peeling occurs in the reliability test. In the adhesive layer of Comparative Example 7, since a solid substance was used for the epoxy resin, the fluidity of the adhesive layer at the time of bonding was poor, and the adhesive film could not be bonded to the tantalum wafer. From the results of Tables 2 and 3, it is known that the adhesive film can be formed by making the adhesive film with a particle size of -26.〇8Χμηη with a thickness of -26-201139604 degrees 相对μηι relative to the adhesive layer. The gap at the time of wafer bonding can obtain an adhesive film with less warpage and high adhesive reliability. In addition, it is found that an epoxy resin and a curing agent are in an amount of 30 parts by mass or more and 145 parts by mass or less with respect to 100 parts by mass of the acrylic copolymer resin, and an adhesive film having high adhesive reliability can be obtained. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing the configuration of a tape for wafer processing relating to an embodiment of the present invention. Fig. 2 is a view showing a state in which a semiconductor wafer and a wafer ring are bonded to a wafer processing tape. Fig. 3 is an explanatory view for explaining the cutting step for the mode. Fig. 4 is an explanatory diagram for explaining the expansion steps of the mode. Fig. 5 is an explanatory diagram for explaining the pickup step for the mode. [Description of main component symbols] 1 : Semiconductor wafer 2 : Semiconductor wafer 10 : Wafer processing tape 12a : Substrate film 1 2 b : Adhesive layer 1 2 : Adhesive film 1 3 : Adhesive layer 20 : Ring frame -27- 201139604 2 1 : Cutting plate 22: adsorption table 3 0: ejection member 31: needle 3 2 : adsorption fixture