TW201120177A - Slice like adhesive and tape for wafer processing. - Google Patents

Slice like adhesive and tape for wafer processing. Download PDF

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Publication number
TW201120177A
TW201120177A TW099139359A TW99139359A TW201120177A TW 201120177 A TW201120177 A TW 201120177A TW 099139359 A TW099139359 A TW 099139359A TW 99139359 A TW99139359 A TW 99139359A TW 201120177 A TW201120177 A TW 201120177A
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TW
Taiwan
Prior art keywords
adhesive
resin
sheet
evaluation
film
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TW099139359A
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Chinese (zh)
Inventor
Kunihiko Ishiguro
Yasumasa Morishima
Shinichi Ishiwata
Original Assignee
Furukawa Electric Co Ltd
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Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Publication of TW201120177A publication Critical patent/TW201120177A/en

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
    • C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • C09J133/08—Homopolymers or copolymers of acrylic acid esters
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/35—Heat-activated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/304—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive being heat-activatable, i.e. not tacky at temperatures inferior to 30°C
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

Landscapes

  • Organic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)
  • Dicing (AREA)
  • Laminated Bodies (AREA)

Abstract

The invention provides a slice like adhesive having excellent adhesive force between a semiconductor chip and a lead frame or a packaging substrate and capable of acquiring ionic impurities inside the adhesive layer, and provides a tape for wafer processing produced by using the slice like adhesive, and a semiconductor device produced by using the slice like adhesive. The slice like adhesive 12 contains a chelate modified curable resin, which is modified by a chelate, as an adhesive composition, and the compounding ratio for the chelate modified epoxy resin relative to the curable resin constituent is below 10 % by mass, and relative to 100 parts by mass of the curable resin constitutent, the content of the high molecular weight compound which has an average molecular weight above 100,000 is 40 to 100 parts by mass.

Description

201120177 六、發明說明： 【發明所屬之技術領域】 本發明有關薄片狀接著劑及晶圓加工用膠帶。 【先前技術】 半導體裝置的製造步驟中，實施下述步驟：將半導體 晶圓切斷分離（切割）成半導體晶片單元的步驟；拾取經 分離的半導體晶片的步驟；進而將拾取的半導體晶片接著 於引線框或封裝基板等的晶粒黏合（安裝）步驟。 近年，作爲用於上述半導體裝置的製造步驟的晶圓加 工用膠帶’例如提出了在基材薄膜上設置黏著劑層的晶圓 加工用膠帶、或具有在黏著劑層上進而層合有接著劑層的 結構的晶圓加工用膠帶（晶粒黏合薄膜：DDF)，並已實 用化。 此處，如FOW ( Film on Wire，導線上覆薄膜）系半 導體裝置’在接著劑層接觸半導體晶片的導通用導線的情 況下’導通用導線被接著劑層內部的離子性雜質腐蝕，會 有發生電路短路之情況。爲了解決上述問題，提出了減低 接著劑層內部的離子性雜質量的方法或添加離子捕捉劑的 方法（參見專利文獻1 ) ^ [專利文獻] [專利文獻1]日本特開2007-63549號公報 201120177 【發明內容】 [發明欲解決之課題] 但是，在上述減低接著劑層內部的離子性雜質量的方 法中，爲了減少離子性雜質的量而有花費大量成本的問題 。另外，專利文獻1所述的接著劑層中，藉由添加無機系 離子捕捉劑來抑制金屬腐蝕，但由於該方法會使接著劑層 的接著力降低，故而必須使用接著力提升劑，從而有製造 成本增加的問題。另外，無機系離子捕捉劑本身有對導通 用導線帶來物理性損壞的問題，即導通用導線埋入接著劑 層時有無機系離子捕捉劑與導通用導線接觸而使導通用導 線變形的問題。 爲此，本發明爲了解決上述問題而完成，目的在於提 供半導體晶片與引線框或封裝基板等之間的接著力優異、 且能捕捉接著劑層內部的離子性雜質的薄片狀接著劑，及 使用該薄片狀接著劑製作的晶圓加工用膠帶以及使用該薄 片狀接著劑製作的半導體裝置。 [用以解決課題之手段] 本發明人等對上述課題進行了潛心硏究，結果發現藉 由使作爲薄片狀接著劑組成物含有螯合物改性環氧樹脂， 可以製作能捕捉薄片狀接著劑內部的離子性雜質的薄片狀 接著劑。另外，藉由使用該薄片狀接著劑，可製作能捕捉 接著劑層內部的離子性雜質的晶圓加工用膠帶。又發現藉 由使用該薄片狀接著劑，可製作導通性優異且離子性雜質 -6- 201120177 導致的金屬腐蝕受到抑制的耐濕性及高溫放置特性優異的 FOW系半導體裝置，從而完成本發明。 即，本發明第1樣態的薄片狀接著劑，其係含有藉熱 或高能量射線硬化的硬化樹脂及使環氧基硬化的環氧硬化 劑作爲硬化樹脂成分，且前述硬化樹脂的一部分或全部爲 整合物改質環氧樹脂，其特徵爲前述硬化樹脂成分中含有 1 〇質量％以上前述螯合物改質環氧樹脂，相對於1 〇〇質量 份前述硬化樹脂成分量，含有4 0〜10 0質量份之重量平均 分子量爲10萬以上的高分子量化合物成分量。 本發明第2樣態的薄片狀接著劑的特徵在於，在上述 本發明第1樣態的薄片狀接著劑中，前述高分子量化合物 成分爲丙烯酸樹脂共聚物。 本發明第3樣態的薄片狀接著劑的特徵在於，在上述 本發明的第1或第2樣態的薄片狀接著劑中，相對於前述 薄片狀接著劑的總量，以40〜70質量％的比例含有無機塡 充劑。 本發明第1樣態的晶圓加工用膠帶的特徵在於，具有 在基材薄膜上層合有黏著劑層的黏著薄膜，上述本發明的 第1至3中任一個樣態的薄片狀接著劑層係層合於前述黏 著薄膜的前述黏著劑層上。 本發明第1樣態的半導體裝置的特徵在於，使用上述 本發明的第1至3中任一個樣態的薄片狀接著劑予以製作 201120177 [發明效果] 根據本發明，可製作能捕捉薄片狀接著劑內部的離子 性雜質的薄片狀接著劑。又，藉由使用該薄片狀接著劑， 可製作能捕捉薄片狀接著劑內部的離子性雜質的晶圓加工 用膠帶。另外，與利用減少離子性雜質的方法或添加離子 捕捉劑的方法製作的薄片狀接著劑及晶圓加工用膠帶相比 ，可以廉價地製作本發明的該薄片狀接著劑及該晶圓加工 用膠帶。又，藉由使用該薄片狀接著劑，可製作導通性優 異且離子性雜質導致的金屬腐蝕受到抑制的耐濕性及高溫 放置特性優異的FOW系半導體裝置。另外，藉由減少高 分子量化合物成分來使薄片狀接著劑柔軟化，在FOW系 半導體裝置的製造步驟中，可在薄片狀接著劑中容易地埋 入導通用導線。 【實施方式】 以下基於附圖詳細說明本發明實施形態。 圖1係顯示使用本發明一實施形態的薄片狀接著劑 12的接著薄膜20的截面圖。 如圖1所示，接著薄膜20具有在脫模薄膜11上層合 有本發明的薄片狀接著劑12之構成。又，接著薄膜20亦 可在與設置有脫模薄膜11的面相反的薄片狀接著劑12的 面上進一步層合與脫模薄膜11不同的脫模薄膜的構成之 接著薄膜，並將其捲繞成輥狀者。另外，上述薄片狀接著 劑1 2亦可根據使用步驟或裝置預先切斷（預剪切）成規 -8- 201120177 定的形狀。 其次’針對在於基材薄膜上層合有黏著劑層的黏著薄 膜的黏著劑層上層合有本發明的薄片狀接著劑12的晶圓 加工用膠帶（晶粒黏合薄膜）加以說明。圖2係顯示本發 明一實施形態的晶圓加工用膠帶1 0的截面圖。 如圖2所示，本發明之一實施形態的晶圓加工用膠帶 10具有黏著薄膜13和層合於該黏著薄膜13上的薄片狀 接著劑12，所述黏著薄膜13係由薄膜狀的基材薄膜13a 和形成於其上的黏著劑層1 3b所構成。由此，晶圓加工用 膠帶10係依基材薄膜13a、黏著劑層13b及薄片狀接著 劑1 2之順序而形成。 又，黏著劑層1 3b可由一層黏著劑層所構成，亦可由 層合二層以上的黏著劑層所構成。另外，圖2係顯進而在 薄片狀接著劑12上設置脫模薄膜11的狀況的晶圓加工用 膠帶1〇。 黏著薄膜13及薄片狀接著劑12可以根據使用步驟或 裝置預先切斷（預剪切）成規定形狀。本發明的晶圓加工 用膠帶10包括切斷成一片片半導體晶圓的形態和將複數 個半導體晶圓片形成的長條薄膜捲繞成輥狀的形態。 接著，針對使用上述薄片狀接著劑12，將半導體晶 片晶粒黏合在封裝基板上而製作的F0W系半導體裝置加 以說明。圖3係顯示本發明的—實施形態的F 0 w系半導 體裝置30的截面圖。 如圖3所示’本發明的一實施形態的FOW系半導體 201120177 裝置30具有複數層（圖3中爲5層）的半導體晶片31( 31a、31b、31c、31d、31e)、安裝半導體晶片31的安裝 基板32、將各半導體晶片31與安裝基板32電性連接的 導通用導線33、及用於將安裝基板32與電子裝置（未圖 示）電性連接的凸塊電極34。又，半導體晶片31構成爲 由薄片狀接著劑12將各半導體晶片31彼此接著的層合構 造。另外，最下部的半導體晶片31e與安裝基板32由接 著劑35予以接著。且，接著劑35可爲薄片狀接著劑12 ，亦可爲糊膏狀的接著劑。 又’將最上部的半導體晶片31a除外的各半導體晶片 31 (31b、31c、31d、3le)與安裝基板32電性連接的導 通用導線33成爲將導通用導線33的一部分埋入薄片狀接 著劑1 2中的構成。 藉由將導通用導線33埋入薄片狀接著劑12中的構成 ’在導線焊接中’可將FOW系半導體裝置30設爲薄型， 同時可確保導通用導線33的配置區域。 以下’詳細說明本實施形態的接著薄膜20及晶圓加 工用膠帶10的各構成要素。 (脫模薄膜） 脫模薄膜11用於提高薄片狀接著劑12的操作性。 作爲脫模薄膜11 ’例如，可以使用聚乙烯薄膜、聚 丙嫌薄膜、聚丁嫌薄膜、聚丁二烯薄膜、聚甲基戊烯薄膜 、聚氯乙烯薄膜、氯乙烯共聚物薄膜、聚對苯二甲酸乙二 -10- 201120177 酯薄膜、聚萘二甲酸乙二酯薄膜、聚對苯二甲酸丁二酯薄 膜 '聚胺酯薄膜、乙烯·乙酸乙烯酯共聚物薄膜、離子鍵 聚合物樹脂薄膜、乙烯·（甲基）丙烯酸共聚物薄膜、乙 烯·（甲基）丙烯酸酯共聚物薄膜、聚苯乙烯薄膜、聚碳 酸酯薄膜、聚醯亞胺薄膜、氟樹脂薄膜等。另外，亦可使 用該等的交聯薄膜。亦可爲上述薄膜的層合薄膜。 脫模薄膜11的表面張力較好爲40mN/m以下，更好 ϋ 爲35 mN/m以下。該種表面張力低的脫模薄膜11可適當 選擇材質而獲得，且亦可對薄膜表面塗布矽酮樹脂等實施 脫模處理而獲得。 脫模薄膜11的膜厚通常爲5~300μιη，較好爲 10〜200μηι，最好爲20〜150μιη左右。 (薄片狀接著劑） 薄片狀接著劑1 2係作爲在貼合半導體晶圓等進行切 φ 割後’拾取半導體晶片時’附著於半導體晶片背面，用以 將晶片固定於基板或引線框時的接著劑所使用者。. 薄片狀接著劑1 2含有藉熱或高能量射線硬化的硬化 樹脂’該硬化樹脂的一部分或全部係由螯合物改質環氧樹 脂構成。即’該硬化樹脂可以僅爲螯合物改質環氧樹脂， 亦可爲含有整合物改質環氧樹脂及未經螯合物改質環氧樹 脂的其他硬化樹脂。 螯合物改質環氧樹脂只要是可使含有金屬氧化物及/ 或金屬氫氧化物的螯合物成分與分子內具有2個以上環氧 -11 - 201120177 基的環氧成分反應得到者即可。 作爲金屬氧化物及/或金屬氫氧化物，較好使用氧化 鎂、氧化鈣、氧化鋅、氧化鈦、氧化鎘、氧化鉛、氫氧化 鎂、氫氧化鈣、磷酸等。 作爲環氧成分’例如，可較好地使用氫醌、間苯二酚 、鄰苯二酚、苯-1，3,5·三醇（Phloroglucinol)等單核多元酚 化合物的聚縮水甘油基醚化合物；二羥基萘、雙酚、亞甲 基雙酚（雙酚F)、亞甲基雙（鄰甲酚）、亞乙基雙酚、 異亞丙基雙酚（雙酚A)、異亞丙基雙（鄰甲酚）、四溴 雙酚A、1，3-雙（4-羥基枯基苯）、ι，4-雙（4-羥基枯基苯 )、1，1，3-三（4-羥基苯基）丁烷、ι，ι，2,2-四（4-羥基苯 基）乙烷、硫代雙酚、磺基雙酚、氧基雙酚（ oxybisphenol)、酚醛清漆、鄰甲酚清漆、乙基酚醛清漆 、丁基酚醛清漆、辛基酚醛清漆、間苯二酚清漆、萜烯酚 等多核多元酚化合物的縮水甘油基醚化合物；乙二醇、丙 二醇、丁二醇、己二醇、聚乙二醇、硫二甘醇、甘油、三 羥甲基丙烷、季戊四醇、山梨醇、雙酚A-環氧乙烷加成 物等多元醇類的聚縮水甘油基醚；馬來酸、富馬酸、衣康 酸、琥珀酸、戊二酸、辛二酸、己二酸、壬二酸、癸二酸 、二聚酸、三聚酸、鄰苯二甲酸、間苯二甲酸、對苯二甲 酸、偏苯三酸、苯均三酸、苯均四酸、四氫化鄰苯二甲酸 、六氫化鄰苯二甲酸、甲橋四氫化鄰苯二甲酸（ endomethylene tetrahydrophthalic acid)等脂肪族、芳香 族或脂環族多元酸的縮水甘油基酯類與甲基丙烯酸縮水甘 -12- 201120177 油基酯的均聚物或共聚物：N，N-二縮水甘油基苯胺、雙（ 4- (N-甲基-N-縮水甘油基胺基）苯基）甲烷等具有縮水 甘油基胺基的環氧化合物：乙烯基環己烯二環氧化物、二 環戊二烯二環氧化物、3,4-環氧基環己基甲基-3，4-環氧基 環己烷羧酸酯、3，4-環氧基-6-甲基環己基甲基-6-甲基環 己烷羧酸酯、雙（3,4-環氧基-6-甲基環己基甲基）己二酸 酯等環狀烯烴化合物的環氧化物；環氧化聚丁二烯、環氧 化苯乙烯-丁二烯共聚物等環氧化共軛二烯聚合物、異氰 脲酸三縮水甘油基酯等雜環化合物等。 作爲螯合物改質環氧樹脂以外可以任意使用的硬化樹 脂，可以舉出未經螯合物改質的環氧樹脂、丙烯酸樹脂、 矽酮樹脂、酚醛樹脂、熱硬化型聚醯亞胺樹脂、聚胺酯樹 脂、三聚氰胺樹脂、脲醛樹脂等或其混合物或者改質物， 特別是基於耐熱性、作業性、可靠性優異的觀點來看，較 好使用環氧樹脂。 另外，薄片狀接著劑12至少含有使螯合物改質環氧 樹脂硬化的環氧硬化劑。又，作爲螯合物改質環氧樹脂以 外可以任意使用的硬化樹脂，於含有未經蝥合物改質的環 氧樹脂時，該環氧樹脂亦較好使用環氧硬化劑。作爲環氧 硬化劑，例如可以使用酚系樹脂。作爲酚系樹脂，可以沒 有特別限定地使用烷基酹、多元酚、萘酚等酚類與醛類的 縮合物等。該等酚系樹脂所含的酚性羥基與環氧樹脂的環 氧基藉由加熱可容易地進行加成反應，而形成耐衝擊性高 的硬化物。 -13- 201120177 酚系樹脂較好使用酚醛清漆樹脂、鄰甲酚清漆樹脂、 對甲酚清漆樹脂、第三丁基酚醛清漆樹脂、二環戊二烯甲 酚樹脂、聚對乙烯基酚醛樹脂、雙酚A型清漆樹脂或其 等之改質物等。 此外，作爲硬化劑，亦可以使用熱活性型潛在性環氧 樹脂硬化劑。該硬化劑係在室溫不與環氧樹脂反應，經某 溫度以上的加熱而活化才與環氧樹脂反應之類型的硬化劑 〇 作爲活化方法，存在下述方法：利用加熱藉由化學反 應生成活性種（陰離子、陽離子）的方法；在室溫附近穩 定地分散於環氧樹脂中，在高溫下與環氧樹脂相溶·溶解 ，開始硬化反應的方法；利用分子篩（molecular sieve) 封入型硬化劑在高溫溶出引發硬化反應的方法；以及利用 微膠囊進行的方法等。 作爲熱活性型潛在性環氧樹脂硬化劑，可以舉出各種 鑰鹽、二元酸二醯肼化合物、雙氰胺、胺加成物硬化劑、 咪唑化合物等高熔點活性氫化合物等。 另外’亦可使用硬化促進劑等作爲助劑。作爲可用於 本發明的硬化促進劑並無特別限定，可使用例如三級胺、 咪唑類、四級銨鹽等。作爲本發明中較好使用的咪唑類， 例如可使用2 -甲基咪唑、2 -乙基-4 -甲基咪唑、1-氰基乙 基-2 -苯基咪唑、1_氰基乙基-2-苯基咪唑鎗偏苯三酸鹽、 2 -苯基-4,5 -二羥基甲基咪唑等，上述硬化促進劑可使用1 種或倂用2種以上。咪唑類例如由四國化成工業（股）以 -14- 201120177 2MZ > 2E4MZ、2PZ-CN、2PZ-CNS、2PHZ 的商品名進行 銷售。 本說明書中，將上述螯合物改質環氧樹脂、任意使用 的硬化樹脂以及環氧硬化劑稱爲硬化樹脂成分’薄片狀接 著劑12中，在該硬化樹脂成分中含有10質量％以上之螯 合物改質環氧樹脂。如果少於1 〇質量％時，則接著力不 足，拾取時容易產生裂紋。 B 又，薄片狀接著劑12較好含有聚合物，作爲聚合物 ，可使用苯氧基樹脂、丙烯酸共聚物等。從柔軟性優異的 觀點來看，較好使用丙烯酸共聚物，更好爲玻璃轉移溫度 (Tg)爲-10°c以上3 0°c以下的丙烯酸共聚物。玻璃轉移 溫度低於-l〇°C時，難以薄膜化，超過30°C時，薄膜的可 撓性降低。 另外’薄片狀接著劑12中，相對於1〇〇質量份上述 硬化樹脂成分量，較好配合40~1 〇〇質量份之重量平均分 φ 子量爲10萬以上的高分子量化合物成分量。作爲該高分 子量化合物成分’較好爲丙烯酸樹脂共聚物，高分子量成 分亦可適當含有官能性單體。 丙嫌酸樹脂共聚物多於100質量份時，薄片狀接著劑 12本身變硬，在FOW系半導體裝置的製作中，將導通用 導線塡入薄片狀接著劑1 2時，擠壓導通用導線容易使其 斷線’低於4 0質量份時’薄片狀接著劑1 2本身變軟，在 FOW系半導體裝置的製作中，載置於其上的半導體晶片 容易接觸導通用導線。 -15- 201120177 丙烯酸共聚物的聚合方法·沒有特別限定，例如可以舉 出珠狀聚合、溶液聚合、懸浮聚合等。藉由上述方法可得 到共聚物。懸浮聚合因耐熱性優異而較佳，作爲上述丙嫌 酸共聚物，例如可以舉出SG-70 8-6 (長瀨精細化工股份 有限公司製、商品名）。 丙烯酸系共聚物的重量平均分子量較好爲5萬以上， 特佳爲20萬〜1〇〇萬的範圍內。分子量過低時，薄膜形成 不充分’過高時，與其他成分的相溶性變差，結果妨礙薄 膜形成。 另外’薄片狀接著劑12中，作爲其他成分，可使用 聚醯亞胺樹脂、聚醯胺樹脂、聚醚醯亞胺樹脂、聚醯胺醯 亞胺樹脂、聚酯樹脂、聚酯樹脂、聚酯醯亞胺樹脂、苯氧 基樹脂、聚颯樹脂、聚醚颯樹脂、聚苯硫醚樹脂丨聚醚酮 樹脂 '氯化聚丙烯樹脂、丙烯酸樹脂、聚胺酯樹脂、環氧 樹脂、聚丙烯醯胺樹脂、三聚氰胺樹脂等或其混合物。 另外，薄片狀接著劑12中亦可配合塡充劑。作爲塡 充劑，可舉出結晶二氧化矽、熔融二氧化矽、合成二氧化 矽等二氧化矽、氧化鋁、玻璃球等無機塡充劑。藉由在硬 化性保護膜形成層中添加無機塡充劑，可提高硬化後的接 著劑硬度。另外，可使硬化後的接著劑的熱膨脹係數接近 半導體晶圓的熱膨脹係數，由此可以降低半導體晶圓的翹 曲。作爲塡充劑，較好爲二氧化矽，特別是盡力除去了導 致半導體裝置錯誤作動的α射線的射線源的類型的二氧化 矽最爲適當。作爲塡充劑的形狀，可使用球形、針狀、無 -16- 201120177 定形的類型的塡充劑中的任一種，特佳爲最緻密塡充的球 形塡充劑。 另外，相對於薄片狀接著劑12的總量，較好含有 40~70質量％的無機塡充劑。無機塡.充劑多於70質量。/。時 ，FOW系半導體裝置的製作中，將導通用導線塡入薄片 狀接著劑12時’無機塡充劑接觸導通用導線，使導通用 導線變形容易使其斷線，少於40質量％時，將提高硬化 B 後的接著劑的硬度或使接著劑的熱膨脹係數接近半導體晶 圓的熱膨脹係數的效果變差。 薄片狀接著劑12由於含有螯合物改質環氧樹脂，故 具有良好的接著力，無需使用偶合劑。但是，偶合劑若少 ，則對由吸水導致材料劣化或由薄片狀接著劑1 2的滲出 現象導致經時劣化所致的影響少，所以爲了在不劣化的情 況下進一步提高接著力，亦可配合少量偶合劑。此時，矽 烷偶合劑相對於總計1 00質量份的其他組成物，較好爲 φ 〇. 1質量份以下。作爲偶合劑，較好爲矽烷偶合劑。作爲 矽烷偶合劑，可以舉出γ-縮水甘油氧基丙基三甲氧基矽烷 、γ-毓基丙基三甲氧基矽烷、γ-胺基丙基三乙氧基矽烷、 γ-脲基丙基三乙氧基矽烷、Ν-β-胺基乙基-γ-胺基丙基三甲 氧基矽烷等。 另外，清漆化的溶劑較好使用沸點較低的甲基乙基酮 、丙酮、甲基異丁基酮、2-乙氧基乙醇、甲苯、丁基纖溶 劑、甲醇、乙醇、2-甲氧基乙醇等。另外，基於提高塗膜 性等的目的，亦可加入高沸點溶劑。作爲高沸點溶劑，可 -17- 201120177 以舉出二甲基乙醯胺、二甲基甲醯胺、甲基吡咯烷酮、環 己酮等。 薄片狀接著劑12的厚度可適當設定’但較好爲 5〜ΙΟΟμηι左右。 就提高薄片狀接著劑12的斷裂強度而言’增加聚合 物、減少塡充劑、減少環氧樹脂（固態）爲有效。另外’ 就降低薄片狀接著劑1 2從脫模薄膜1 1剝離的剝離力而言 ，減少聚合物、減少環氧樹脂（液態）爲有效。 (黏著薄膜） 作爲黏著薄膜13並無特別限定，只要是在將半導體 晶圓進行切割時，具有不剝離半導體晶圓般充分的黏著力 ’且具有切割後拾取半導體晶片時可容易地從薄片狀接著 劑1 2剝離般低的黏著力的黏著薄膜即可。例如，可適當 地使用在基材薄膜13a上設置黏著劑層13b的黏著薄膜。 作爲黏著薄膜13的基材薄膜13a，只要是現有公知 的’就可以沒有特別限定地使用，但使用放射線硬化性的 材料作爲下述的黏著劑層13b時，較好使用具有放射線透 過性的材料。 例如，作爲該材料，可以列舉聚乙烯、聚丙烯 '乙 烯-丙烯共聚物、聚丁烯-1、聚-4-甲基戊烯-1、乙烯-乙酸 乙烯酯共聚物、乙烯-丙烯酸乙酯共聚物、乙烯-丙烯酸甲 酯共聚物、乙烯-丙烯酸共聚物、離聚物等α-烯烴的均聚 物或共聚物或其等之混合物、聚胺酯、苯乙烯-乙烯-丁烯 -18- 201120177 或戊烯系共聚物、聚醯胺-聚醇共聚物等熱塑性彈性體、 以及其等之混合物。又，基材薄膜l3a可混合從上述組群 中選擇的2種以上材料者，該等基材可爲單層或多層化者 〇 基材薄膜13a的厚度沒有特別限定，可適當設定，但 較好爲 50~200μηι。 作爲於黏著薄膜13的黏著劑層13b中使用的樹脂並 無特別限定’可使用用於黏著劑的公知氯化聚丙烯樹脂、 丙烯酸樹脂、聚酯樹脂、聚胺酯樹脂、環氧樹脂等。 黏著劑層13b的樹脂較好適當配合丙烯酸系黏著劑、 放射線聚合性化合物、光聚合引發劑、硬化劑等調製黏著 劑。黏著劑層1 3b的厚度可以沒有特別限定地適當設定， 但較好爲5~30μηι。 將放射線聚合性化合物配合於黏著劑層1 3 b，藉由放 射線硬化可從薄片狀接著劑1 2容易地剝離。該放射線聚 合性化合物係使用例如利用光照可發生三維網狀化的分子 內至少具有2個以上光聚合性碳-碳雙鍵的低分子量化合 物。 具體而言，可使用三羥甲基丙烷三丙烯酸酯、季戊四 醇三丙烯酸酯、季戊四醇四丙烯酸酯、二季戊四醇單羥基 五丙烯酸酯、二季戊四醇六丙烯酸酯、1，4-丁二醇二丙烯 酸酯、1,6-己二醇二丙烯酸酯、聚乙二醇二丙烯酸酯或寡 聚酯丙烯酸酯等。 另外，除上述丙烯酸酯系化合物之外，亦可使用胺酯 -19- 201120177 丙烯酸酯系寡聚物。胺酯丙烯酸酯系寡聚物可如下得到， 使聚酯型或聚醚型等多元醇化合物與多元異氰酸酯化合物 (例如，2,4·甲苯二異氰酸酯、2,6-甲苯二異氰酸酯、 1，3-苯二亞甲基二異氰酸酯、1，4-苯二亞甲基二異氰酸酯 、二苯基甲烷4,4-二異氰酸酯等）反應得到的末端異氰酸 酯胺酯預聚物，與具有羥基的丙烯酸酯或甲基丙烯酸酯（ 例如，丙烯酸2 -羥基乙酯、甲基丙烯酸2 -羥基乙酯、丙 烯酸2 -羥基丙酯、甲基丙烯酸2 -羥基丙酯、聚乙二醇丙 烯酸酯、聚乙二醇甲基丙烯酸酯等）反應而得到。 黏著劑層1 3b亦可爲混合選自上述樹脂的2種以上樹 脂者。 使用光聚合引發劑時，例如可以使用異丙基苯偶因醚 、異丁基本偶因醚、二苯甲酮、米氏酮（Michler ketone )、氯噻噸酮、十二烷基噻噸酮、二甲基噻噸酮、二乙基 唾噸酮、苄基二甲基縮酮、α-羥基環己基苯基酮、2_羥基 甲基苯基丙烷等。上述光聚合引發劑的配合量相對於1〇〇 質量份丙烯酸系聚合物較好爲〇.〇1〜5質量份。 (實施例） 接著’說明本發明的實施例，但本發明並不限定於下 述實施例。 (薄片狀接著劑的製作方法） 在下述表1所示配合的薄片狀接著劑組成物1Α〜1Κ -20- 201120177 中加入甲基乙基酮並攪拌混合，製作接著劑清漆。將製作 的薄片狀接著劑組成物1Α~1Κ的接著劑清漆塗布於脫模 薄膜11上，使得乾燥後的厚度爲20μηι，再在liot下乾 燥3分鐘，分別製作薄片狀接著劑12。然後，將脫模薄 膜11從薄片狀接著劑12剝離，製作下述表2所示的實施 例1〜4及下述表3所示的比較例1〜7的薄片狀接著劑。 [表1] 接署籽層組成物 1A IB 1C 1D ιε IF 1Q 1H 11 1J IK 環氧樹脂(1) 50 10 50 50 5 50 50 50 50 50 環鼠g脂(2) 40 50 45 粉樹月g 50 50 50 50 50 50 50 50 50 50 50 —iiisi—— 0.4 0.4 0.4 0.4 0.4 0.4 0.4 0.4 0.4 0.4 0.4 丙烯酸樹脂 70 70 100 40 70 70 70 120 200 30 10 .跟财。雜n料 170 170 200 140 170 170 —17〇, 220 300 130 110 10 5201120177 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a sheet-like adhesive and a tape for wafer processing. [Prior Art] In the manufacturing step of the semiconductor device, the steps of: cutting (cutting) the semiconductor wafer into semiconductor wafer units; picking up the separated semiconductor wafer; and subsequently picking up the picked semiconductor wafer A die bonding (mounting) step of a lead frame or a package substrate or the like. In recent years, as a tape for processing a wafer for use in the manufacturing process of the above-described semiconductor device, for example, a tape for wafer processing in which an adhesive layer is provided on a substrate film or a laminate in which an adhesive is further laminated on an adhesive layer has been proposed. A layer of wafer processing tape (die bonded film: DDF) has been put into practical use. Here, for example, a FOW (Film on Wire) semiconductor device 'in the case where the adhesive layer contacts the conductive wire of the semiconductor wafer, the conductive common wire is corroded by ionic impurities inside the adhesive layer, and there is A short circuit occurs. In order to solve the above problem, a method of reducing the ionic impurity mass in the adhesive layer or a method of adding an ion scavenger has been proposed (see Patent Document 1). [Patent Document 1] [Patent Document 1] JP-A-2007-63549 201120177 [Disclosure] [Problem to be Solved by the Invention] However, in the above method of reducing the ionic impurity amount in the adhesive layer, there is a problem that a large amount of cost is required in order to reduce the amount of ionic impurities. Further, in the adhesive layer described in Patent Document 1, metal corrosion is suppressed by adding an inorganic ion trapping agent. However, since the adhesion of the adhesive layer is lowered by this method, it is necessary to use an adhesion promoter. The problem of increased manufacturing costs. In addition, the inorganic ion trapping agent itself has the problem of causing physical damage to the conductive common wire, that is, the problem that the inorganic ion trapping agent contacts the conductive wire and the conductive wire is deformed when the common wire is buried in the adhesive layer. . Therefore, the present invention has been made to solve the above problems, and an object of the invention is to provide a sheet-like adhesive which is excellent in adhesion between a semiconductor wafer and a lead frame or a package substrate, and which can capture ionic impurities in the adhesive layer, and is used. A wafer processing tape produced by the sheet-like adhesive and a semiconductor device produced using the sheet-like adhesive. [Means for Solving the Problem] The inventors of the present invention have intensively studied the above-mentioned problems, and as a result, it has been found that a chelating-modified epoxy resin can be produced as a sheet-like adhesive composition, and can be formed into a sheet-like shape. A flaky adhesive of ionic impurities inside the agent. Further, by using the sheet-like adhesive, a wafer processing tape capable of capturing ionic impurities in the subsequent layer can be produced. Further, it has been found that the FOW-based semiconductor device having excellent conductivity and excellent in moisture resistance and high-temperature deposition characteristics, which suppresses metal corrosion caused by ionic impurities -6-201120177, can be produced by using the flaky adhesive. In other words, the sheet-like adhesive agent according to the first aspect of the present invention contains a curing resin which is cured by heat or high-energy rays, and an epoxy curing agent which hardens an epoxy group, and a part of the hardening resin or All of the above-mentioned modified epoxy resins are characterized in that the hardened resin component contains 1% by mass or more of the above-mentioned chelate-modified epoxy resin, and contains 40% of the amount of the hardened resin component per part by mass of the hardened resin component. ～100 parts by mass of the high molecular weight compound component amount having a weight average molecular weight of 100,000 or more. In the sheet-like adhesive agent according to the first aspect of the invention, the high molecular weight compound component is an acrylic resin copolymer. The sheet-like adhesive according to the third aspect of the present invention is characterized in that the sheet-like adhesive of the first or second aspect of the present invention has a mass of 40 to 70 with respect to the total amount of the sheet-like adhesive. The proportion of % contains an inorganic chelating agent. The tape for processing a wafer according to the first aspect of the present invention is characterized in that the adhesive film having an adhesive layer laminated on the base film, and the sheet-like adhesive layer of any one of the first to third aspects of the present invention. The layer is laminated on the aforementioned adhesive layer of the aforementioned adhesive film. The semiconductor device according to the first aspect of the present invention is characterized in that the sheet-like adhesive of any of the first to third aspects of the present invention is used. 201120177 [Effect of the Invention] According to the present invention, it is possible to produce a sheet-like shape and then A flaky adhesive of ionic impurities inside the agent. Further, by using the sheet-like adhesive, a wafer processing tape capable of capturing ionic impurities in the sheet-like adhesive can be produced. Further, the sheet-like adhesive of the present invention and the wafer processing can be produced at a lower cost than the sheet-like adhesive and the wafer processing tape produced by the method of reducing ionic impurities or the method of adding an ion trapping agent. tape. Further, by using the sheet-like adhesive agent, it is possible to produce a FOW-based semiconductor device having excellent conductivity and excellent moisture resistance and high-temperature deposition characteristics, which are excellent in conductivity and suppressed by metal impurities. Further, by reducing the high molecular weight compound component and softening the sheet-like adhesive, in the manufacturing step of the FOW-based semiconductor device, the conductive wire can be easily buried in the sheet-like adhesive. [Embodiment] Hereinafter, embodiments of the present invention will be described in detail based on the drawings. Fig. 1 is a cross-sectional view showing a bonding film 20 using a sheet-like adhesive 12 according to an embodiment of the present invention. As shown in Fig. 1, the film 20 has a structure in which the sheet-like adhesive 12 of the present invention is laminated on the release film 11. Further, the film 20 may be further laminated on the surface of the sheet-like adhesive 12 opposite to the surface on which the release film 11 is provided, and a film of a release film different from the release film 11 may be laminated and rolled. Wrap it into a roll. Further, the above-mentioned sheet-like adhesive 12 may be previously cut (pre-sheared) into a shape determined by the specification -8-201120177 according to the use procedure or apparatus. Next, the wafer processing tape (die bond film) in which the sheet-like adhesive 12 of the present invention is laminated on the adhesive layer of the adhesive film having the adhesive layer laminated on the base film will be described. Fig. 2 is a cross-sectional view showing a wafer processing tape 10 according to an embodiment of the present invention. As shown in Fig. 2, a tape 10 for wafer processing according to an embodiment of the present invention has an adhesive film 13 and a sheet-like adhesive 12 laminated on the adhesive film 13, and the adhesive film 13 is formed of a film-like base. The material film 13a and the adhesive layer 13b formed thereon are formed. Thereby, the wafer processing tape 10 is formed in the order of the base film 13a, the adhesive layer 13b, and the sheet-like adhesive 12. Further, the adhesive layer 13b may be composed of a layer of an adhesive or may be composed of an adhesive layer of two or more layers. In addition, Fig. 2 shows a wafer processing tape 1 which is in a state in which the release film 11 is provided on the sheet-like adhesive 12. The adhesive film 13 and the sheet-like adhesive 12 can be previously cut (pre-sheared) into a predetermined shape in accordance with the use procedure or apparatus. The tape for wafer processing 10 of the present invention includes a form in which a plurality of semiconductor wafers are cut and a long film formed of a plurality of semiconductor wafers are wound into a roll shape. Next, an F0W-based semiconductor device produced by bonding a semiconductor wafer die to a package substrate using the above-described sheet-like adhesive 12 will be described. Fig. 3 is a cross-sectional view showing a F 0 w semiconductor device 30 according to an embodiment of the present invention. As shown in FIG. 3, the FOW-based semiconductor 201120177 device 30 of the present invention has a plurality of layers (three layers in FIG. 3) of semiconductor wafers 31 (31a, 31b, 31c, 31d, 31e), and semiconductor wafers 31 mounted thereon. The mounting substrate 32, the conductive lead 33 electrically connecting the semiconductor wafer 31 and the mounting substrate 32, and the bump electrode 34 for electrically connecting the mounting substrate 32 to an electronic device (not shown). Further, the semiconductor wafer 31 is configured by laminating the semiconductor wafers 31 with each other by the sheet-like adhesive 12. Further, the lowermost semiconductor wafer 31e and the mounting substrate 32 are followed by the adhesive 35. Further, the adhesive 35 may be a sheet-like adhesive 12 or a paste-like adhesive. Further, the conductive lead 33 electrically connecting the semiconductor wafers 31 (31b, 31c, 31d, and 3le) excluding the uppermost semiconductor wafer 31a to the mounting substrate 32 serves to embed a part of the conductive lead 33 in a sheet-like adhesive. The composition of 1 2 . The FOW-based semiconductor device 30 can be made thin by the structure in which the conductive lead 33 is buried in the sheet-like adhesive 12, and the arrangement area of the conductive lead 33 can be ensured. Hereinafter, each constituent element of the adhesive film 20 and the wafer processing tape 10 of the present embodiment will be described in detail. (Release Film) The release film 11 is used to improve the workability of the sheet-like adhesive 12. As the release film 11', for example, a polyethylene film, a polypropylene film, a polybutylene film, a polybutadiene film, a polymethylpentene film, a polyvinyl chloride film, a vinyl chloride copolymer film, or a polyparaphenylene can be used. Ethylene diformate-10-201120177 Ester film, polyethylene naphthalate film, polybutylene terephthalate film 'polyurethane film, ethylene vinyl acetate film, ionomer resin film, ethylene (meth)acrylic copolymer film, ethylene/(meth)acrylate copolymer film, polystyrene film, polycarbonate film, polyimide film, fluororesin film, and the like. Further, these crosslinked films can also be used. It may also be a laminated film of the above film. The surface tension of the release film 11 is preferably 40 mN/m or less, more preferably ϋ 35 mN/m or less. Such a release film 11 having a low surface tension can be obtained by appropriately selecting a material, and can also be obtained by subjecting the surface of the film to an antimony resin or the like to a release treatment. The film thickness of the release film 11 is usually from 5 to 300 μm, preferably from 10 to 200 μm, preferably from about 20 to 150 μm. (Sheet-like adhesive) The sheet-like adhesive 1 2 is attached to the back surface of the semiconductor wafer when the semiconductor wafer is picked up after the dicing of the semiconductor wafer or the like, and is used to fix the wafer to the substrate or the lead frame. Then the user of the agent. The flaky adhesive 12 contains a hardened resin which is hardened by heat or high-energy ray. A part or all of the cured resin is composed of a chelate-modified epoxy resin. That is, the cured resin may be only a chelate-modified epoxy resin, or may be another hardened resin containing an integrated modified epoxy resin and an unchelated modified epoxy resin. The chelate-modified epoxy resin is obtained by reacting a chelate component containing a metal oxide and/or a metal hydroxide with an epoxy component having two or more epoxy-11 - 201120177 groups in the molecule. can. As the metal oxide and/or metal hydroxide, magnesium oxide, calcium oxide, zinc oxide, titanium oxide, cadmium oxide, lead oxide, magnesium hydroxide, calcium hydroxide or phosphoric acid is preferably used. As the epoxy component, for example, a polyglycidyl ether of a mononuclear polyphenol compound such as hydroquinone, resorcin, catechol or phenyl-1,3,5-triol (Phloroglucinol) can be preferably used. Compound; dihydroxynaphthalene, bisphenol, methylene bisphenol (bisphenol F), methylene bis(o-cresol), ethylene bisphenol, isopropylidene bisphenol (bisphenol A), iso-Asia Propyl bis(o-cresol), tetrabromobisphenol A, 1,3-bis(4-hydroxycumylbenzene), iota, 4-bis(4-hydroxycumylbenzene), 1,1,3-three (4-hydroxyphenyl)butane, iota, 2,2-tetrakis(4-hydroxyphenyl)ethane, thiobisphenol, sulfobisphenol, oxybisphenol, novolac, Glycidyl ether compounds of polynuclear polyphenol compounds such as o-cresol varnish, ethyl novolac varnish, butyl novolac, octyl novolac, resorcin varnish, terpene phenol, etc.; ethylene glycol, propylene glycol, butylene glycol a polyglycidyl ether of a polyhydric alcohol such as hexanediol, polyethylene glycol, thiodiglycol, glycerin, trimethylolpropane, pentaerythritol, sorbitol or bisphenol A-ethylene oxide adduct; Malay , fumaric acid, itaconic acid, succinic acid, glutaric acid, suberic acid, adipic acid, azelaic acid, sebacic acid, dimer acid, trimer acid, phthalic acid, isophthalic acid, Aliphatic acid, trimellitic acid, trimesic acid, pyromellitic acid, tetrahydrophthalic acid, hexahydrophthalic acid, endomethylene tetrahydrophthalic acid, etc. , Glycidyl ester of aromatic or alicyclic polybasic acid and glycidyl methacrylate-12- 201120177 Homopolymer or copolymer of oleyl ester: N,N-diglycidyl aniline, bis ( 4- An epoxy compound having a glycidylamine group such as (N-methyl-N-glycidylamino)phenyl)methane: vinylcyclohexene diepoxide, dicyclopentadiene diepoxide, 3,4-Epoxycyclohexylmethyl-3,4-epoxycyclohexanecarboxylate, 3,4-epoxy-6-methylcyclohexylmethyl-6-methylcyclohexane Epoxide of a cyclic olefin compound such as a carboxylic acid ester or bis(3,4-epoxy-6-methylcyclohexylmethyl)adipate; epoxidized polybutadiene, epoxidized styrene- Epoxidized diene polymer conjugated diene copolymer, isocyanuric acid triglycidyl ester like glycidyl heterocyclic compound. Examples of the curable resin which can be used arbitrarily as a chelate-modified epoxy resin include an epoxy resin which has not been modified with a chelate compound, an acrylic resin, an anthrone resin, a phenol resin, and a thermosetting polyimide resin. Polyurethane resin, melamine resin, urea-formaldehyde resin, or the like, or a mixture or modified product thereof, in particular, an epoxy resin is preferably used from the viewpoint of excellent heat resistance, workability, and reliability. Further, the sheet-like adhesive 12 contains at least an epoxy curing agent which cures the chelate-modified epoxy resin. Further, as the curable resin which can be optionally used as the chelate-modified epoxy resin, when an epoxy resin which has not been modified with a chelate compound is contained, an epoxy resin is preferably used as the epoxy resin. As the epoxy curing agent, for example, a phenol resin can be used. As the phenol resin, a condensate of a phenol such as an alkyl hydrazine, a polyhydric phenol or a naphthol and an aldehyde can be used without particular limitation. The phenolic hydroxyl group contained in the phenol resin and the epoxy group of the epoxy resin can be easily subjected to an addition reaction by heating to form a cured product having high impact resistance. -13- 201120177 The phenolic resin is preferably a novolak resin, an o-cresol varnish resin, a p-cresol varnish resin, a third butyl novolac resin, a dicyclopentadiene cresol resin, a poly-p-vinyl phenolic resin, Bisphenol A type varnish resin or the like, etc. Further, as the curing agent, a thermally active latent epoxy resin hardener can also be used. The hardener is a hardener which is not reacted with an epoxy resin at room temperature and is activated by heating at a temperature or higher to react with an epoxy resin. As a method of activation, there is a method of generating a chemical reaction by heating. a method of active species (anion, cation); a method of stably dispersing in an epoxy resin at room temperature, dissolving and dissolving with an epoxy resin at a high temperature, and starting a hardening reaction; using a molecular sieve to encapsulate hardening A method in which a dissolution agent initiates a hardening reaction at a high temperature; a method using a microcapsule, and the like. Examples of the thermally active latent epoxy resin hardener include various high-melting-point active hydrogen compounds such as various key salts, dibasic acid diterpene compounds, dicyandiamide, amine adduct hardeners, and imidazole compounds. Further, a curing accelerator or the like may be used as an auxiliary agent. The curing accelerator which can be used in the present invention is not particularly limited, and for example, a tertiary amine, an imidazole or a quaternary ammonium salt can be used. As the imidazole which is preferably used in the present invention, for example, 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl group can be used. -2-phenylimidazole gun trimellitate, 2-phenyl-4,5-dihydroxymethylimidazole, etc., and the above-mentioned hardening accelerator may be used alone or in combination of two or more. The imidazoles are sold, for example, by Shikoku Chemicals Co., Ltd. under the trade names of -14-201120177 2MZ > 2E4MZ, 2PZ-CN, 2PZ-CNS, and 2PHZ. In the present specification, the chelate-modified epoxy resin, the hardening resin to be used, and the epoxy curing agent are referred to as a cured resin component in the sheet-like adhesive 12, and the cured resin component is contained in an amount of 10% by mass or more. Chelate modified epoxy resin. If it is less than 1% by mass, the adhesion is insufficient, and cracks are likely to occur at the time of picking up. Further, the sheet-like adhesive 12 preferably contains a polymer, and as the polymer, a phenoxy resin, an acrylic copolymer or the like can be used. From the viewpoint of excellent flexibility, an acrylic copolymer is preferably used, and an acrylic copolymer having a glass transition temperature (Tg) of -10 ° C or more and 30 ° C or less is more preferable. When the glass transition temperature is lower than -10 °C, it is difficult to form a film, and when it exceeds 30 °C, the flexibility of the film is lowered. In the sheet-like adhesive agent 12, the amount of the high-molecular-weight compound component having a weight-average fraction of 40 parts by mass or more of 40 to 1 part by mass is preferably blended with respect to 1 part by mass of the amount of the cured resin component. The high molecular weight component is preferably an acrylic resin copolymer, and the high molecular weight component may suitably contain a functional monomer. When the amount of the acrylic acid copolymer is more than 100 parts by mass, the sheet-like adhesive 12 itself becomes hard, and in the production of the FOW-based semiconductor device, when the conductive wire is drawn into the sheet-like adhesive 12, the conductive wire is extruded. When the wire breakage is less than 40 parts by mass, the sheet-like adhesive 1 2 itself becomes soft, and in the production of the FOW-based semiconductor device, the semiconductor wafer placed thereon is easily contacted with the conductive wire. -15-201120177 The polymerization method of the acrylic copolymer is not particularly limited, and examples thereof include bead polymerization, solution polymerization, and suspension polymerization. The copolymer can be obtained by the above method. The suspension polymerization is preferred because it is excellent in heat resistance. The above-mentioned acrylic acid copolymer is, for example, SG-70 8-6 (manufactured by Nagase Fine Chemicals Co., Ltd., trade name). The weight average molecular weight of the acrylic copolymer is preferably 50,000 or more, and particularly preferably in the range of 200,000 to 1,000,000. When the molecular weight is too low, the film formation is insufficient. When the film is too high, the compatibility with other components is deteriorated, and as a result, the formation of the film is inhibited. Further, in the sheet-like adhesive 12, as the other component, a polyimide resin, a polyamide resin, a polyether quinone resin, a polyamide amide resin, a polyester resin, a polyester resin, or a poly Ester imide resin, phenoxy resin, polyfluorene resin, polyether oxime resin, polyphenylene sulfide resin 丨 polyether ketone resin 'chlorinated polypropylene resin, acrylic resin, polyurethane resin, epoxy resin, polypropylene 醯An amine resin, a melamine resin or the like or a mixture thereof. Further, a chelating agent may be blended in the sheet-like adhesive 12 . Examples of the ruthenium agent include inorganic ruthenium agents such as crystal ruthenium dioxide, molten ruthenium dioxide, and synthetic ruthenium dioxide, alumina, and glass spheres. By adding an inorganic chelating agent to the hard protective film forming layer, the hardness of the adhesive after curing can be improved. Further, the thermal expansion coefficient of the cured adhesive can be made close to the thermal expansion coefficient of the semiconductor wafer, whereby the warpage of the semiconductor wafer can be reduced. As the enthalpy, cerium oxide is preferred, and cerium oxide of the type which is a source of ray which causes the erroneous operation of the semiconductor device to remove the erroneous operation is most suitable. As the shape of the squeegee, any one of a spherical, acicular, and no styling type of the shape can be used, and particularly preferably a densely packed spherical sputum. Further, it is preferable to contain 40 to 70% by mass of an inorganic chelating agent with respect to the total amount of the flaky adhesive 12 . Inorganic bismuth. Charge more than 70 mass. /. In the production of a FOW-based semiconductor device, when the conductive wire is inserted into the sheet-like adhesive 12, the inorganic filler contacts the conductive wire, and the conductive wire is easily deformed to be broken, and when it is less than 40% by mass, The effect of increasing the hardness of the adhesive after hardening B or making the thermal expansion coefficient of the adhesive close to the thermal expansion coefficient of the semiconductor wafer deteriorates. Since the sheet-like adhesive 12 contains a chelate-modified epoxy resin, it has a good adhesion, and it is not necessary to use a coupling agent. However, if the amount of the coupling agent is small, the influence of deterioration of the material due to water absorption or the occurrence of bleeding by the flaky adhesive 12 is small, so that the adhesion can be further improved without deterioration. Mix with a small amount of coupling agent. In this case, the decane coupling agent is preferably φ 〇. 1 part by mass or less based on the total of 100 parts by mass of the other composition. As the coupling agent, a decane coupling agent is preferred. Examples of the decane coupling agent include γ-glycidoxypropyltrimethoxydecane, γ-mercaptopropyltrimethoxydecane, γ-aminopropyltriethoxydecane, and γ-ureidopropyl group. Triethoxy decane, Ν-β-aminoethyl-γ-aminopropyltrimethoxydecane, and the like. In addition, the varnished solvent is preferably a methyl ethyl ketone having a lower boiling point, acetone, methyl isobutyl ketone, 2-ethoxyethanol, toluene, butyl fiber solvent, methanol, ethanol, 2-methoxy Base ethanol and the like. Further, a high boiling point solvent may be added for the purpose of improving coating properties and the like. As a high-boiling solvent, dimethyl-acetamide, dimethylformamide, methylpyrrolidone, cyclohexanone, etc. may be mentioned as -17-201120177. The thickness of the sheet-like adhesive 12 can be appropriately set ', but is preferably about 5 to ΙΟΟμηι. It is effective to increase the polymer, reduce the chelating agent, and reduce the epoxy resin (solid state) in terms of improving the breaking strength of the flaky adhesive 12. Further, it is effective to reduce the peeling force of the sheet-like adhesive 1 2 from the release film 1 1 by reducing the amount of the polymer and reducing the epoxy resin (liquid state). (Adhesive film) The adhesive film 13 is not particularly limited as long as it has a sufficient adhesive force to peel off the semiconductor wafer when the semiconductor wafer is diced, and can be easily removed from the flaky shape when the semiconductor wafer is picked up after dicing. The adhesive film 12 can be peeled off as a low adhesion adhesive film. For example, an adhesive film in which the adhesive layer 13b is provided on the base film 13a can be suitably used. The base film 13a of the adhesive film 13 is not particularly limited as long as it is conventionally known. However, when a radiation curable material is used as the adhesive layer 13b described below, a material having radiolucent property is preferably used. . For example, examples of the material include polyethylene, polypropylene 'ethylene-propylene copolymer, polybutene-1, poly-4-methylpentene-1, ethylene-vinyl acetate copolymer, and ethylene-ethyl acrylate. A homopolymer or copolymer of a copolymer, an ethylene-methyl acrylate copolymer, an ethylene-acrylic acid copolymer, an ionomer, or the like, or a mixture thereof, a polyurethane, a styrene-ethylene-butene-18-201120177 Or a thermoplastic elastomer such as a pentene copolymer or a polyamine-polyol copolymer, or a mixture thereof. Further, the base film 13a may be mixed with two or more materials selected from the above group, and the base material may be a single layer or a multilayer. The thickness of the base film 13a is not particularly limited and may be appropriately set. Good for 50~200μηι. The resin to be used for the adhesive layer 13b of the adhesive film 13 is not particularly limited. A known chlorinated polypropylene resin, an acrylic resin, a polyester resin, a polyurethane resin, an epoxy resin or the like for an adhesive can be used. The resin of the pressure-sensitive adhesive layer 13b is preferably suitably blended with an acrylic adhesive, a radiation-polymerizable compound, a photopolymerization initiator, a curing agent, or the like. The thickness of the adhesive layer 13b can be appropriately set without particular limitation, but is preferably 5 to 30 μm. The radiation polymerizable compound is blended in the adhesive layer 13 b, and is easily peeled off from the sheet-like adhesive 1 2 by radiation hardening. The radiation-polymerizable compound is, for example, a low molecular weight compound having at least two photopolymerizable carbon-carbon double bonds in a molecule which can be three-dimensionally networked by light. Specifically, trimethylolpropane triacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate, 1,4-butanediol diacrylate, 1,6-hexanediol diacrylate, polyethylene glycol diacrylate or oligoester acrylate. Further, in addition to the above acrylate-based compound, an amine ester -19-201120177 acrylate-based oligomer can also be used. The urethane acrylate oligomer can be obtained by using a polyol compound such as a polyester or a polyether compound and a polyvalent isocyanate compound (for example, 2,4·toluene diisocyanate, 2,6-toluene diisocyanate, 1, 3). a terminal isocyanate amine ester prepolymer obtained by reacting - phenyldimethylene diisocyanate, 1,4-benzenedimethylene diisocyanate, diphenylmethane 4,4-diisocyanate, etc., with an acrylate having a hydroxyl group Or methacrylate (for example, 2-hydroxyethyl acrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl acrylate, 2-hydroxypropyl methacrylate, polyethylene glycol acrylate, polyethylene) It is obtained by reacting an alcohol methacrylate or the like. The adhesive layer 13b may be a mixture of two or more kinds of resins selected from the above resins. When a photopolymerization initiator is used, for example, isopropyl benzoate ether, isobutyl benzoate ether, benzophenone, Michler ketone, chlorothioxanthone, dodecyl thioxanthone can be used. , dimethyl thioxanthone, diethyl stilbene ketone, benzyl dimethyl ketal, α-hydroxycyclohexyl phenyl ketone, 2-hydroxymethyl phenyl propane, and the like. The amount of the photopolymerization initiator to be added is preferably from 1 to 5 parts by mass based on 1 part by mass of the acrylic polymer. (Embodiment) Next, an embodiment of the present invention will be described, but the present invention is not limited to the following embodiment. (Manufacturing Method of Flake-Form Binder) Methyl ethyl ketone was added to the flaky adhesive composition 1 Α to 1 Κ -20 - 201120177, which was blended in the following Table 1, and stirred and mixed to prepare an adhesive varnish. An adhesive varnish having a sheet-like adhesive composition of 1 to 1 Å was applied onto the release film 11 so as to have a thickness of 20 μm after drying, and dried for 3 minutes under a lidt to form a sheet-like adhesive 12, respectively. Then, the release film 11 was peeled off from the sheet-like adhesive 12, and the sheet-like adhesives of Examples 1 to 4 shown in Table 2 below and Comparative Examples 1 to 7 shown in Table 3 below were produced. [Table 1] The seed layer composition 1A IB 1C 1D ιε IF 1Q 1H 11 1J IK epoxy resin (1) 50 10 50 50 5 50 50 50 50 50 Ring rat g fat (2) 40 50 45 Pink tree month g 50 50 50 50 50 50 50 50 50 50 50 — iiisi — 0.4 0.4 0.4 0.4 0.4 0.4 0.4 0.4 0.4 0.4 0.4 Acrylic resin 70 70 100 40 70 70 70 120 200 30 10 . Miscellaneous materials 170 170 200 140 170 170 —17〇, 220 300 130 110 10 5

另外，上述表1中，各成分的配合比例的單位爲質量 份。另外，環氧樹脂（1)爲EP-49-23( ADEKA(股）製商 品名，螯合物改質雙酚F型環氧樹脂，環氧當量175g/eq )，環氧樹脂（2 )爲RE3 03 S (日本化藥（股）製商品名 ，雙酚F型環氧樹脂，環氧當量165 g/eq)。酚醛樹脂爲 φ Mirex XLC-LL (三井化学（股）製商品名，羥基當量 175g/eq，吸水率爲1.8%，3 5 0〇C下的加熱重量減少率爲 4% )。硬化促進劑爲Curezol 2PZ (四國化成（股）製商 品名，2-苯基咪唑）。丙烯酸樹脂爲SG-P3(長瀨精細化 工（股）製商品名，重量平均分子量爲85萬，玻璃轉移 溫度爲l〇t：)。二氧化矽塡充劑爲S0-C2(ADMAFINE( 股）製商品名，比重爲2.2 g/cm3，莫氏硬度7，平均粒徑 爲0·5μιη，比表面積爲6.0m2/g)。無機系離子捕捉劑（1 )爲Zeoramu F-9 (東曹（股）製商品名，X型沸石，平 -21 - 201120177 均细孔徑爲10埃，空孔容積爲〇.27cm3/g)，無機系離子 捕捉劑（2 )爲DHT-4H (協和化學工業（股）製商品名 水滑石（hydrotalcite))。 [表2] 3施例1 Η施例2 寶施例3 實施例4 接著材層組成物 1A 1Β 1C 1D 導通性 不良封裝體個數(個） 0 0 0 0 不良封裝體比例(％) 0 0 0 0 耐濕性 不良封裝體個數(個） 0 0 0 0 不良封裝體比例(％) 0 0 0 0 髙雛置特性 不良封裝體個數(個） 0 0 0 0 不良封裝體比例(％) 0 0 0 0 [表3] 贼例1 比較例2 秘例3 比較例4 比較例5 比較例6 比較例7 smm 組成物 1E 1F 1G 1H 11 1J 1K 9通性 不良封裝β個數(個〉 0 0 4 Z 12 3 20 不良封裝體比例(％&gt; 0 0 20 10 60 15 100 酎濕性 不良封個數(個） 10 3 4 2 12 3 20 不良封裝位比例(％&gt; 50 15 20 10 60 15 100 高溫放置特性 不良封坡S個數(㈣ 12 6 4 2 12 3 20 不良封比例0W 60 30 20 10 60 15 100 對實施例1〜4及比較例1〜7，分別進行導通性的評價 、耐濕性的評價及高溫放置特性的評價》表2及表3中表 示導通性的評價、耐濕性的評價及高溫放置特性的評價。 導通性的評價、耐濕性的評價及高溫放置特性的評價 中，將形成有鋁配線的模擬元件與鍍銀的42Alloy引線框 ，以粗度爲30μηι的銅線進行導線焊接於矽晶片上後，在 導通用導線連接後的模擬元件上，使用根據上述薄片狀接 著劑的製作方法製作的實施例1 ~4的薄片狀接著劑及比較 例1〜7的薄片狀接著劑將另外的矽晶片用FOW法進行焊 接，在175°C、7 0kgf/cm2、成型時間120秒的條件下成型 20個厚度爲1.4 mm的TQFP封裝體’使用180 °C下、後固 化4小時的封裝體作爲評價封裝體。 -22- 201120177 &lt;導通性的評價&gt; 導通性的評價使用於上述方法製作的評價封裝體，調 查在該20個評價封裝體中所含的斷線及/或電路短路的不 良封裝體的比例的結果。表2及表3的不良封裝體的個數 是表示20個評價封裝體中的不良封裝體的個數，不良封 裝體的比例是表示20個評價封裝體中的不良封裝體個數 的比例（％ )。 &lt;耐濕性的評價&gt; 耐濕性的評價是將用上述方法製作的評價封裝體在 140°C、85%RH的氣氛中施加5V的直流偏置電壓，放置 5 00小時後’調査該20個評價封裝體中所含的斷線及/或 電路短路的不良封裝體的比例的結果。表2及表3的不良 封裝體的個數是表示20個評價封裝體中的不良封裝體的 個數’不良封裝體的比例是表示20個評價封裝體中的不 φ 良封裝體個數的比例（％)。 &lt;高溫放置特性的評價&gt; 高溫放置特性的評價是將用上述方法製作的評價封裝 體在2 0 0 °C的乾燥器中放置1，〇 0 0小時後，將樹脂硬化物 用發煙硝酸溶解，測定矽晶片側的焊接部的拉伸強度，該 拉伸強度的値爲初期値的5 0%以下的試樣爲不良封裝體， 調查20個評價封裝體中所含的不良封裝體的比例的結果 。表2及表3的不良封裝體的個數是表示2〇個評價封裝 -23- 201120177 體中不良封裝體的個數，不良封裝體的比例表示20個評 價封裝體中的不良封裝體的個數比例（％ )。另外，矽晶 片側的焊接部的拉伸強度的測定是使用RHESCA股份有 限公司製的焊接測試儀（基於1^11^-3丁〇-883〇、1£0：-60749-22、SEMI-G73-0997、EIAJ-ED-4703 )，直接拉伸 焊接在矽晶片上的導通用導線，測定導通性導線斷裂時的 負荷値作爲拉伸強度。 如表2所示，使用實施例1〜4的薄片狀接著劑的評價 封裝體’使用螯合物改質環氧樹脂且螯合物改質環氧樹脂 相對于硬化樹脂成分（環氧樹脂與酚醛樹脂）的配合比例 爲10質量％以下’且相對於1〇〇質量份硬化樹脂成分量 ’重量平分子量爲10萬以上的高分子量化合物成分的丙 烯酸樹脂量爲40〜1 00質量份，所以導通性的評價、耐濕 性的評價及高溫放置特性的評價的任一個評價中，均無不 良封裝體，得到良好結果》 如表3所示，使用比較例1的薄片狀接著劑的評價封 裝體在導通性評價中，無不良封裝體而爲良好結果。但是 ，因不使用螯合物改質環氧樹脂，導致導通用導線被離子 性雜質腐蝕，電路短路’所以成爲在耐濕性評價中發生 5 0%的不良封裝體’而在高溫放置特性的評價發生6 〇 %的 不良封裝體的結果。即，使用比較例1的薄片狀接著劑的 評價封裝體’由於未使用螯合物改質環氧樹脂，所以導通 用導線被離子性雜質腐蝕，得到耐濕性的評價及高溫放置 特性的評價差的結果。 -24- 201120177 使用比較例2的薄片狀接著劑的評價封裝體，在導通 性評價中得到無不良封裝體之良好結果。但是，雖然使用 整π物改質環氧樹脂，但是硬化樹脂成分中的蟹合物改質 環氧樹脂成分的含量爲5質量％，爲上述規定的1〇質量％ 以上的範圍之外，因此導通用導線被離子性雜質腐蝕，電 路短路’所以得到在耐濕性評價中產生1 5%的不良封裝體 ’在高溫放置特性的評價中產生30%的不良封裝體的結果 。即’使用比較例2的薄片狀接著劑的評價封裝體由於未 使用螯合物改質環氧樹脂，所以導通用導線被離子性雜質 腐蝕’得到耐濕性的評價及高溫放置特性的評價差的結果 〇 使用比較例3的薄片狀接著劑的評價封裝體，利用無 機系離子捕捉劑，埋入導通用導線時無機系離子捕捉劑與 導通用導線接觸，從而使導通用導線變形，所以導通性的 評價中得到產生20%的不良封裝體的結果。另外，耐濕性 的評價及高溫放置特性的評價中，均得到產生20 %的不良 封裝體的結果。即，使用比較例3的薄片狀接著劑的評價 封裝體中，由於無機系離子捕捉劑在導通用導線埋入時無 機系離子捕捉劑與導通用導線接觸，從而使導通用導線變 形，所以得到導通性的評價、耐濕性的評價及高溫放置特 性的評價差的結果。 使用比較例4的薄片狀接著劑的評價封裝體中，相對 於100質量份硬化樹脂成分含有120質量份的較多丙烯酸 樹脂，由此薄片狀接著劑變硬，導通用導線埋入時擠壓導 -25- 201120177 通用導線，所以導通性的評價中’得到產生1 〇%的不良封 裝體的結果。另外，在耐濕性的評價及高溫放置特性的評 價中，得到均發生1 〇%的不良封裝體的結果。即，使用比 較例4的薄片狀接著劑的評價封裝體中，相對於100質量 份硬化樹脂成分含有120質量份的較多丙烯酸樹脂，由此 薄片狀接著劑變硬，導通用導線埋入時，擠壓導通用導線 ，所以得到導通性的評價、耐濕性的評價及高溫放置特性 的評價差的結果。 使用比較例5的薄片狀接著劑的評價封裝體中，相對 於1〇〇質量份硬化樹脂成分含有200質量份的較多丙烯酸 樹脂，由此薄片狀接著劑變硬，導通用導線埋入時，擠壓 導通用導線，所以在導通性的評價中，得到產生60%的不 良封裝體的結果。另外，在耐濕性的評價及高溫放置特性 的評價中，得到均發生60%的不良封裝體的結果。即，使 用比較例4的薄片狀接著劑的評價封裝體中，相對於100 質量份硬化樹脂成分含有200質量份的較多丙烯酸樹脂， 由此薄片狀接著劑變硬，導通用導線埋入時，擠壓導通用 導線，所以得到導通性的評價、耐濕性的評價及高溫放置 特性的評價差的結果。 使用比較例6的薄片狀接著劑的評價封裝體中，相對 於100質量份硬化樹脂成分含有30質量份的稍微較少丙 烯酸樹脂，由此薄片狀接著劑變柔軟，載置於薄片狀接著 劑上的半導體晶片與導通用導線接觸，所以導通性的評價 中，得到發生1 5%的不良封裝體的結果。另外，耐濕性的 -26- 201120177 評價及高溫放置特性的評價中，均得到發生1 5 %的不良封 裝體的結果。即，使用比較例6的薄片狀接著劑的評價封 裝體中，相對於100質量份硬化樹脂成分含有30質量份 的稍微較少丙烯酸樹脂，由此薄片狀接著劑變柔軟，載置 於薄片狀接著劑上的半導體晶片與導通用導線接觸，所以 得到導通性的評價、耐濕性的評價及高溫放置特性的評價 差的結果。 使用比較例7的薄片狀接著劑的評價封裝體中，相對 於1〇〇質量份硬化樹脂成分含有10質量份的較少的丙烯 酸樹脂，由此薄片狀接著劑變柔軟，載置於薄片狀粘接劑 上的半導體晶片與導通用導線接觸，所以在導通性的評價 中得到發生100%的不良封裝體的結果。另外，在耐濕性 的評價及高溫放置特性的評價中，均得到發生1 00%的不 良封裝體的結果。即，使用比較例7的薄片狀接著劑的評 價封裝體中，相對於100質量份硬化樹脂成分含有10質 量份的較少丙烯酸樹脂，由此薄片狀接著劑變柔軟，載置 於薄片狀接著劑上的半導體晶片與導通用導線接觸，所以 在導通性的評價、耐濕性的評價及高溫放置特性的評價差 的結果。 由表2及表3所示的結果可知，使用螯合物改質環氧 樹脂且螯合物改質環氧樹脂相對於硬化樹脂成分（環氧樹 脂與酚醛樹脂）的配合比例爲1 〇質量％以下，且相對於 100質量份硬化樹脂成分，重量平均分子量爲10萬以上 的高分子量化合物成分的丙烯酸樹脂爲40〜100質量份， -27- 201120177 所以可製作能捕捉薄片狀接著劑1 2內部的離子性雜質的 薄片狀接著劑12。另外，藉由使用本發明的薄片狀接著 劑1 2，可製作能捕捉薄片狀接著劑1 2內部的離子性雜質 的晶圓加工用膠帶1 0。另外，與使用減少離子性雜質量 的方法或添加離子捕捉劑的方法製作的薄片狀接著劑及晶 圓加工用膠帶相比，可以廉價地製作本發明的薄片狀接著 劑1 2及晶圓加工用膠帶1 0。另外，藉由使用本發明的薄 片狀接著劑1 2，可製作導通性優異且離子性雜質導致金 屬腐蝕受到抑制的耐濕性及高溫放置特性優異的FOW系 半導體裝置30。另外，藉由減少高分子量化合物成分， 柔化薄片狀接著劑12，在FOW系半導體裝置30的製造 步驟中，可以容易地在薄片狀接著劑12中埋入導通用導 線。 【圖式簡單說明】 圖1係顯示使用本發明一實施形態之薄片狀接著劑 12的接著薄膜的截面圖。 圖2係顯示本發明一實施形態之晶圓加工用膠帶的截 面圖。 圖3係顯示本發明一實施形態的FOW系半導體裝置 的截面圖。 【主要元件符號說明】 1 0 :晶圓加工用膠帶 -28- 201120177 1 1 :脫模薄膜 12 :接著劑層 1 3 :黏著薄膜 13a :基材薄膜 13b :黏著劑層 20 :接著薄膜 30 : FOW系半導體裝置 31、 31a、 31b、 31c、 31d、 31e:半導體晶片 3 2 :安裝基板 3 3 _·導通用導線 34 :凸塊電極 3 5 :接著劑Further, in the above Table 1, the unit of the mixing ratio of each component is the mass. In addition, the epoxy resin (1) is EP-49-23 (trade name of ADEKA), chelate modified bisphenol F type epoxy resin, epoxy equivalent 175 g/eq, epoxy resin (2) It is RE3 03 S (trade name of Nippon Chemical Co., Ltd., bisphenol F type epoxy resin, epoxy equivalent 165 g/eq). The phenol resin was φ Mirex XLC-LL (trade name, manufactured by Mitsui Chemicals Co., Ltd.), having a hydroxyl group equivalent of 175 g/eq, a water absorption ratio of 1.8%, and a heating weight reduction rate of 45% at 350 ° C. The hardening accelerator is Curezol 2PZ (Shikoku Chemicals Co., Ltd.), 2-phenylimidazole. The acrylic resin was a trade name of SG-P3 (manufactured by Nagase Fine Chemicals Co., Ltd.), and the weight average molecular weight was 850,000, and the glass transition temperature was l〇t:). The cerium oxide filling agent is a trade name of S0-C2 (ADMAFINE, having a specific gravity of 2.2 g/cm3, a Mohs hardness of 7, an average particle diameter of 0.5 μm, and a specific surface area of 6.0 m2/g). The inorganic ion trapping agent (1) is Zeoramu F-9 (trade name of Tosoh Co., Ltd., X-type zeolite, flat-21 - 201120177, the average pore diameter is 10 angstroms, and the pore volume is 〇.27 cm3/g). The inorganic ion trapping agent (2) is DHT-4H (trade name hydrotalcite manufactured by Kyowa Chemical Industry Co., Ltd.). [Table 2] 3 Example 1 Example 2 Example 3 Example 4 Substrate composition 1A 1Β 1C 1D Poor number of packages (a) 0 0 0 0 Poor package ratio (%) 0 0 0 0 Number of packages with poor moisture resistance (number) 0 0 0 0 Proportion of defective package (%) 0 0 0 0 Number of defective packages (0) 0 0 0 0 Poor package ratio ( %) 0 0 0 0 [Table 3] Thief Example 1 Comparative Example 2 Secret Case 3 Comparative Example 4 Comparative Example 5 Comparative Example 6 Comparative Example 7 smm Composition 1E 1F 1G 1H 11 1J 1K 9 Unsatisfactory package β number ( 〉 〉 0 0 4 Z 12 3 20 Poor package ratio (%&gt; 0 0 20 10 60 15 100 酎 Wet poor seal number (pieces) 10 3 4 2 12 3 20 Poor package ratio (%&gt; 50 15 20 10 60 15 100 High temperature placement characteristics Poor slope S number ((4) 12 6 4 2 12 3 20 Poor seal ratio 0W 60 30 20 10 60 15 100 For Examples 1 to 4 and Comparative Examples 1 to 7, respectively Evaluation of Conductivity, Evaluation of Moisture Resistance, and Evaluation of High-Temperature Placement Characteristics Table 2 and Table 3 show the evaluation of conductivity, the evaluation of moisture resistance, and the evaluation of high-temperature placement characteristics. In the evaluation of the moisture resistance and the evaluation of the high-temperature placement characteristics, the dummy component in which the aluminum wiring was formed and the 42-galloy lead frame which was plated with silver were wire-bonded to the tantalum wafer by a copper wire having a thickness of 30 μm, and then guided. On the dummy element after the wire connection, the sheet-like adhesives of Examples 1 to 4 and the sheet-like adhesives of Comparative Examples 1 to 7 produced by the above-described method for producing a sheet-like adhesive were used, and another tantalum wafer was subjected to FOW method. Welding, 20 pieces of TQFP package having a thickness of 1.4 mm were molded under conditions of 175 ° C, 70 kgf / cm 2 , molding time of 120 seconds ' using a package which was post-cured at 180 ° C for 4 hours as an evaluation package. 22-201120177 &lt;Evaluation of Continuity&gt; Evaluation of Continuity The evaluation package produced by the above method was used to investigate the proportion of defective packages in which the disconnected wires and/or circuits were short-circuited in the 20 evaluation packages. The number of defective packages in Tables 2 and 3 is the number of defective packages in the 20 evaluation packages, and the ratio of defective packages is the number of defective packages in the 20 evaluation packages. (%). <Evaluation of moisture resistance> The evaluation of the moisture resistance was performed by applying a DC bias voltage of 5 V to an evaluation package prepared by the above method in an atmosphere of 140 ° C and 85% RH. After 00 hours, the results of the evaluation of the ratio of the defective package including the disconnection and/or the circuit short circuit included in the 20 evaluation packages were investigated. The number of defective packages in Tables 2 and 3 is the number of defective packages in the 20 evaluation packages. The ratio of defective packages is the number of non-φ good packages in the 20 evaluation packages. proportion(%). &lt;Evaluation of high-temperature placement characteristics&gt; The evaluation of the high-temperature placement characteristics was carried out by placing the evaluation package prepared by the above method in a dryer at 200 ° C for 1 hour, and then curing the resin cured product with smoke. The nitric acid was dissolved, and the tensile strength of the welded portion on the side of the crucible wafer was measured. The sample having a tensile strength of 値 of 50% or less of the initial crucible was a defective package, and the poor package contained in the 20 evaluation packages was examined. The result of the ratio. The number of defective packages in Tables 2 and 3 is the number of defective packages in the evaluation package -23-201120177, and the ratio of defective packages indicates the number of defective packages in the 20 evaluation packages. Number ratio (%). In addition, the tensile strength of the welded portion on the side of the crucible wafer was measured using a welding tester manufactured by RHESCA Co., Ltd. (based on 1^11^-3 Ding-883〇, 1£0:-60749-22, SEMI- G73-0997, EIAJ-ED-4703), direct-stretching a common conductor wire soldered on a ruthenium wafer, and measuring the load 导 when the conductive wire is broken as the tensile strength. As shown in Table 2, the evaluation package of the sheet-like adhesives of Examples 1 to 4 used a chelate-modified epoxy resin and a chelate-modified epoxy resin with respect to a hardened resin component (epoxy resin and The blending ratio of the phenolic resin is 10% by mass or less and the amount of the acrylic resin having a weight average molecular weight of 100,000 or more per 1 part by mass of the cured resin component is 40 to 100 parts by mass, so the amount of the acrylic resin is 40 to 100 parts by mass. In any of the evaluations of the evaluation of the conductivity, the evaluation of the moisture resistance, and the evaluation of the high-temperature placement characteristics, no defective package was obtained, and good results were obtained. As shown in Table 3, the evaluation package of the sheet-like adhesive of Comparative Example 1 was used. In the conductivity evaluation, the body had no bad package and was a good result. However, since the chelating agent is not used to modify the epoxy resin, the conductive common wire is corroded by ionic impurities, and the circuit is short-circuited, so that it becomes a defective package which is 50% in the evaluation of moisture resistance, and the characteristics are placed at a high temperature. Evaluate the results of a poor package of 6 〇%. In other words, in the evaluation package of the sheet-like adhesive of Comparative Example 1, since the chelate-modified epoxy resin was not used, the conductive lead wire was corroded by ionic impurities, and evaluation of moisture resistance and evaluation of high-temperature placement characteristics were obtained. Poor results. -24- 201120177 Using the evaluation package of the sheet-like adhesive of Comparative Example 2, a good result without a defective package was obtained in the conductivity evaluation. However, the content of the crab compound-modified epoxy resin component in the cured resin component is 5% by mass, which is outside the range of the above-mentioned predetermined amount of 1% by mass or more. The general-purpose lead wire was corroded by ionic impurities, and the circuit was short-circuited, so that a defective package of 15% in the evaluation of moisture resistance was obtained, and 30% of the defective package was produced in the evaluation of the high-temperature placement characteristics. That is, in the evaluation package using the flaky adhesive of Comparative Example 2, since the chelating ester-modified epoxy resin was not used, the conductive wire was corroded by ionic impurities, and evaluation of moisture resistance and evaluation of high-temperature placement characteristics were poor. As a result, the evaluation package of the flaky adhesive of Comparative Example 3 was used, and the inorganic ion trapping agent was brought into contact with the conductive lead wire by the inorganic ion trapping agent, and the conductive lead wire was deformed, so that the conductive lead was turned on. The result of the 20% defective package was obtained in the evaluation of sex. Further, in the evaluation of the moisture resistance and the evaluation of the high-temperature standing characteristics, a result of producing 20% of the defective package was obtained. In other words, in the evaluation package using the sheet-like adhesive of Comparative Example 3, since the inorganic ion trapping agent is in contact with the conductive lead wire when the conductive trace trap is embedded, the conductive lead wire is deformed, so that The results of the evaluation of the conductivity, the evaluation of the moisture resistance, and the evaluation of the high-temperature placement characteristics were poor. In the evaluation package of the flaky adhesive of Comparative Example 4, 120 parts by mass of the acrylic resin is contained in an amount of 120 parts by mass based on 100 parts by mass of the cured resin component, whereby the sheet-like adhesive is hardened, and the conductive wire is squeezed when embedded. Guide-25- 201120177 Universal wire, so the continuity of the evaluation 'has produced 1 〇% of the result of poor package. Further, in the evaluation of the moisture resistance and the evaluation of the high-temperature placement characteristics, a result of obtaining a defective package of 1% by weight was obtained. In the evaluation package of the sheet-like adhesive of Comparative Example 4, the acrylic resin is contained in an amount of 120 parts by mass based on 100 parts by mass of the cured resin component, whereby the sheet-like adhesive is hardened, and the conductive wire is buried. Since the general-purpose wire was extruded, the evaluation of the conductivity, the evaluation of the moisture resistance, and the evaluation of the high-temperature placement characteristics were poor. In the evaluation package of the flaky adhesive of Comparative Example 5, 200 parts by mass of the acrylic resin is contained in one part by mass of the cured resin component, whereby the sheet-like adhesive is hardened, and the conductive wire is buried. Since the general-purpose wire was extruded, the result of the continuity was obtained, and a result of producing a defective package of 60% was obtained. Further, in the evaluation of the moisture resistance and the evaluation of the high-temperature placement characteristics, a result of obtaining a defective package of 60% in both cases was obtained. In the evaluation package of the sheet-like adhesive of Comparative Example 4, 200 parts by mass of the acrylic resin is contained in an amount of 200 parts by mass based on 100 parts by mass of the cured resin component, whereby the sheet-like adhesive is hardened, and the conductive wire is buried. Since the general-purpose wire was extruded, the evaluation of the conductivity, the evaluation of the moisture resistance, and the evaluation of the high-temperature placement characteristics were poor. In the evaluation package of the flaky adhesive of the comparative example 6, 30 parts by mass of the slightly less acryl resin is contained with respect to 100 parts by mass of the cured resin component, whereby the flaky adhesive becomes soft and is placed on the flaky adhesive. Since the upper semiconductor wafer is in contact with the conductive lead, the result of the continuity evaluation is that a defective package of 15% is obtained. In addition, in the evaluation of the moisture resistance -26-201120177 and the evaluation of the high-temperature placement characteristics, a result of occurrence of a defective package of 15% was obtained. In the evaluation package of the sheet-like adhesive of Comparative Example 6, the acrylic resin was contained in an amount of 30 parts by mass based on 100 parts by mass of the cured resin component, whereby the sheet-like adhesive was softened and placed in a sheet form. Since the semiconductor wafer on the subsequent material was in contact with the conductive conductor, the evaluation of the conductivity, the evaluation of the moisture resistance, and the evaluation of the high-temperature placement characteristics were inferior. In the evaluation package of the sheet-like adhesive of Comparative Example 7, 10 parts by mass of the acrylic resin was contained in an amount of 1 part by mass of the cured resin component, whereby the sheet-like adhesive was softened and placed in a sheet form. Since the semiconductor wafer on the adhesive is in contact with the conductive lead, a result of occurrence of a 100% defective package is obtained in the evaluation of the conductivity. Further, in the evaluation of the moisture resistance and the evaluation of the high-temperature placement characteristics, a result of occurrence of 100% defective package was obtained. In the evaluation package of the sheet-like adhesive of Comparative Example 7, 10 parts by mass of the less-acrylic resin is contained per 100 parts by mass of the cured resin component, whereby the sheet-like adhesive is softened and placed in a sheet form. Since the semiconductor wafer on the agent was in contact with the conductive lead wire, the evaluation of the conductivity, the evaluation of the moisture resistance, and the evaluation of the high-temperature placement characteristics were inferior. From the results shown in Tables 2 and 3, it is understood that the chelate-modified epoxy resin and the blend ratio of the chelate-modified epoxy resin to the curable resin component (epoxy resin and phenol resin) are 1 〇 mass. The amount of the acrylic resin having a weight average molecular weight of 100,000 or more and the high molecular weight compound component is 40 to 100 parts by mass based on 100 parts by mass of the cured resin component, and -27-201120177 can be used to form a sheet-like adhesive 1 2 A flaky adhesive 12 of ionic impurities inside. Further, by using the sheet-like adhesive 1 2 of the present invention, the wafer processing tape 10 capable of capturing ionic impurities in the sheet-like adhesive 1 2 can be produced. Further, the sheet-like adhesive of the present invention and the wafer processing can be produced at a lower cost than the sheet-like adhesive and the wafer processing tape produced by the method of reducing the ionic impurity mass or the method of adding the ion trapping agent. Use tape 1 0. Further, by using the sheet-like adhesive 1 2 of the present invention, the FOW-based semiconductor device 30 which is excellent in conductivity and excellent in moisture resistance and high-temperature placement characteristics in which metal impurities are suppressed by ionic impurities can be produced. Further, by reducing the high molecular weight compound component and softening the sheet-like adhesive 12, in the manufacturing step of the FOW-based semiconductor device 30, the conductive wiring can be easily buried in the sheet-like adhesive 12. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing a bonding film using a sheet-like adhesive 12 according to an embodiment of the present invention. Fig. 2 is a cross-sectional view showing a tape for wafer processing according to an embodiment of the present invention. Fig. 3 is a cross-sectional view showing a FOW type semiconductor device according to an embodiment of the present invention. [Major component symbol description] 1 0 : Wafer processing tape -28- 201120177 1 1 : Release film 12: Adhesive layer 13: Adhesive film 13a: Substrate film 13b: Adhesive layer 20: Next film 30: FOW-based semiconductor device 31, 31a, 31b, 31c, 31d, 31e: semiconductor wafer 3 2: mounting substrate 3 3 - conductive main conductor 34: bump electrode 3 5 : adhesive

-29--29-

Claims (1)

201120177 七、申請專利範圍： 1. 一種薄片狀接著劑，其特徵係含有藉熱或高能量射 線硬化的硬化樹脂及使環氧基硬化的環氧硬化劑作爲硬化 樹脂成分， 前述硬化樹脂的一部分或全部爲螯合物改質環氧樹脂 » 前述硬化樹脂成分中含有10質量％以上的前述螯合 物改質環氧樹脂， 相對於100質量份前述硬化樹脂成分量，含有 40〜100質量份的重量平均分子量爲1〇萬以上的高分子量 化合物成分量。 2 .如申請專利範圍第1項之薄片狀接著劑，其中前述 高分子量化合物爲丙烯酸樹脂共聚物。 3. 如申請專利範圍第1或2項之薄片狀接著劑，其中 相對於前述薄片狀接著劑的總量，以40~70質量％的比例 含有無機塡充劑。 4. 一種晶圓加工用膠帶，其特徵爲具有在基材薄膜上 層合有黏著劑層之黏著薄膜，且如申請專利範圍第1至3 項中任一項之薄片狀接著劑係層合於前述黏著薄膜的前述 黏著劑層上。 5 . —種半導體裝置，其係使用如申請專利範圍第1至 3項中任一項之薄片狀接著劑所製作。 -30-201120177 VII. Patent application scope: 1. A flaky adhesive characterized by a hardening resin hardened by heat or high energy ray and an epoxy hardener which hardens an epoxy group as a hardening resin component, part of the aforementioned hardened resin Or all of the chelate-modified epoxy resin. The chelate-modified epoxy resin containing 10% by mass or more of the hardened resin component contains 40 to 100 parts by mass based on 100 parts by mass of the amount of the cured resin component. The amount of the high molecular weight compound component having a weight average molecular weight of 10,000 or more. 2. The flaky adhesive according to claim 1, wherein the high molecular weight compound is an acrylic resin copolymer. 3. The flaky adhesive according to claim 1 or 2, wherein the inorganic chelating agent is contained in an amount of 40 to 70% by mass based on the total amount of the flaky adhesive. 4. A tape for processing a wafer, characterized by having an adhesive film in which an adhesive layer is laminated on a substrate film, and the flaky adhesive according to any one of claims 1 to 3 is laminated on The adhesive film is on the aforementioned adhesive layer. A semiconductor device produced by using a sheet-like adhesive agent according to any one of claims 1 to 3. -30-
TW099139359A 2009-11-19 2010-11-16 Slice like adhesive and tape for wafer processing. TW201120177A (en)

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