JP5714091B1 - Film roll for semiconductor device, method for manufacturing semiconductor device, and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To suppress a transfer mark to an adhesive film when a film for a semiconductor device in which an adhesive film with a dicing film is laminated on a separator at a predetermined interval is wound in a roll shape. To provide a film roll. A film roll for a semiconductor device in which a film for a semiconductor device is wound around a cylindrical winding core, and the film for a semiconductor device has a dicing film in which a dicing film and an adhesive film are laminated. The film roll for semiconductor devices which has the structure by which the adhesive film was laminated | stacked on the separator at predetermined intervals, and the number of the adhesive films with a dicing film laminated | stacked on the separator is 350 or less. [Selection] Figure 1

Description

  The present invention relates to a film roll for a semiconductor device, a method for manufacturing a semiconductor device, and a semiconductor device.

  Conventionally, a silver paste is used for fixing a semiconductor chip to a substrate or an electrode member during the manufacture of a semiconductor device. Such a fixing process is performed by applying a paste adhesive to the semiconductor chip or the lead frame, mounting the semiconductor chip on the substrate via the paste adhesive, and finally curing the paste adhesive layer.

  However, pasty adhesives cause large variations in coating amount, coating shape, etc., making uniforming difficult, or requiring special equipment and a long time for coating. For this reason, an adhesive film with a dicing film is proposed in which a semiconductor wafer is bonded and held in a dicing process, and an adhesive film for fixing a chip necessary for a mounting process is also provided (see, for example, Patent Document 1).

  This type of adhesive film with a dicing film has a structure in which a die bond film (adhesive film) is laminated on the dicing film. The dicing film has a structure in which an adhesive layer is laminated on a support substrate. This adhesive film with a dicing film is used as follows. That is, after the semiconductor wafer and the adhesive film are diced while being held by the adhesive film, the supporting base is stretched, and the semiconductor chip is peeled off together with the adhesive film, and these are individually collected. Further, the semiconductor chip is bonded and fixed to an adherend such as a BT substrate or a lead frame via an adhesive film. When stacking semiconductor chips in multiple stages, a semiconductor chip with an adhesive film is further bonded and fixed on the semiconductor chip fixed via an adhesive film.

  The adhesive film with a dicing film described above is processed in advance into the shape of a semiconductor wafer to be attached (for example, a circular shape) in consideration of workability such as attachment to a semiconductor wafer and attachment to a ring frame during dicing. There are those that have been pre-cut.

  Such an adhesive film with a dicing film is obtained by laminating a circular punched adhesive film on a dicing film having a pressure-sensitive adhesive layer laminated on a substrate, and then dicing the dicing film into a circular shape corresponding to the ring frame. Manufactured by punching. Thereby, when dicing a semiconductor wafer, a ring frame can be affixed on the outer peripheral part of a dicing film, and an adhesive film with a dicing film can be fixed.

  The adhesive film with a dicing film that has been pre-cut is attached to a long separator at a predetermined interval, and then wound into a roll, and transported and stored as a film roll for a semiconductor device.

JP 2010-074144 A

  However, in the case of the film roll for a semiconductor device described above, the thickness of the portion where the adhesive film with a dicing film is laminated is thicker than the thickness of the portion where it is not laminated. Therefore, the edge of another adhesive film was pressed against one adhesive film, and the trace was transferred, and the smoothness of the adhesive film was sometimes impaired. Such transfer marks are particularly prominent when the number of windings of the film for a semiconductor device is large. When an adhesive film having such a transfer mark and having a defect in smoothness is attached to an adherend such as a semiconductor wafer, voids (bubbles) are generated between the semiconductor wafer and the adherend. It will be. Such voids may reduce the yield of the manufactured semiconductor device.

  This invention is made | formed in view of the said problem, The objective is when the film for semiconductor devices by which the adhesive film with a dicing film was laminated | stacked on the separator at predetermined intervals was wound up in roll shape. It is providing the film roll for semiconductor devices which can suppress the transcription | transfer trace to an adhesive film, and its use.

  The inventors of the present application have studied a film roll for a semiconductor device in order to solve the conventional problems. As a result, it has been found that by adopting the following constitution, transfer marks to the adhesive film can be suppressed, and the present invention has been completed.

That is, the film roll for a semiconductor device according to the present invention is a film roll for a semiconductor device in which the film for a semiconductor device is wound into a roll around a cylindrical core,
The film for a semiconductor device has a configuration in which an adhesive film with a dicing film in which a dicing film and an adhesive film are laminated is laminated on a separator at a predetermined interval,
The number of the adhesive films with the dicing film laminated on the separator is 350 or less.

The film for a semiconductor device is wound into a roll while applying a certain amount of tension. For this reason, when the number of windings is large, a larger pressure is applied to the lower layer adhesive film (adhesive film wound in the first direction).
According to the said structure, the number of the adhesive films with a dicing film laminated | stacked on the said separator is 350 sheets or less. Therefore, it is possible to prevent a large pressure from being applied to the lower adhesive film. As a result, transfer marks on the adhesive film can be suppressed.

  The film roll for a semiconductor device preferably has a diameter of 250 mm or less.

  When the diameter is 250 mm or less, the pressure applied to the lower adhesive film can be further reduced.

  In the said structure, it is preferable that the thickness of the said adhesive film is 80-150 micrometers.

  When the thickness of the adhesive film is relatively thick, such as 80 μm or more, a transfer mark is easily attached when wound in a roll shape. However, since the number of the adhesive films with the dicing film laminated on the separator is 350 or less, transfer marks are sufficiently suppressed even if the thickness of the adhesive film is 80 μm or more. Moreover, when the thickness of the adhesive film is 150 μm or less, it is possible to prevent the edge of the adhesive film from being excessively pressed against another adhesive film and transferring the trace.

  In the above configuration, the adhesive film is for embedding the first semiconductor element fixed on the adherend and fixing the second semiconductor element different from the first semiconductor element to the adherend. It is preferable.

  When the adhesive film is for embedding the first semiconductor element fixed on the adherend and fixing the second semiconductor element different from the first semiconductor element to the adherend, to some extent Thickness is required. However, since the number of the adhesive films with the dicing film laminated on the separator is 350 or less, the transfer marks are sufficiently suppressed even when the adhesive film has a certain thickness.

  The said structure WHEREIN: It is preferable that the thickness of the said separator is 10-60 micrometers.

  When the thickness of the separator is 10 μm or more, the transfer of the trace through the separator can be further suppressed. On the other hand, when the thickness of the separator is 60 μm or less, an increase in the diameter of the film roll for a semiconductor device can be suppressed.

  The said structure WHEREIN: It is preferable that the storage elastic modulus in 25 degreeC before the thermosetting of the said adhesive film is 10 Mpa or more and 10000 Mpa or less.

  When the storage elastic modulus at 25 ° C. before thermosetting of the adhesive film is 10 MPa or more, the adhesive films of adjacent semiconductor elements with an adhesive film are prevented from being re-fused at the time before picking up after dicing. Can do. On the other hand, the softness | flexibility as an adhesive film can be provided in the storage elastic modulus in 25 degreeC before the thermosetting of the said adhesive film being 10000 Mpa or less.

  The said structure WHEREIN: It is preferable that the said adhesive film contains an inorganic filler and content of the said inorganic filler is 10 to 80 weight%.

  When the adhesive film contains a predetermined amount of the inorganic filler, the embedding ease, the protrusion prevention property, and the workability can be exhibited at a higher level.

In addition, a method for manufacturing a semiconductor device according to the present invention includes:
An adherend preparation step for preparing an adherend to which the first semiconductor element is fixed;
The peeling process which peels the adhesive film with a dicing film from the film roll for semiconductor devices of any one of Claims 1-7,
A bonding step of bonding the peeled adhesive film with the dicing film and the semiconductor wafer;
A dicing step of dicing the semiconductor wafer and the adhesive film to form a second semiconductor element;
A pickup step of picking up the second semiconductor element together with the adhesive film; and
A fixing step of fixing the second semiconductor element to the adherend while embedding the first semiconductor element fixed to the adherend by an adhesive film picked up together with the second semiconductor element; And

  According to the said structure, since the adhesive film with a dicing film which peeled from the said film roll for semiconductor devices is used, the transfer trace to an adhesive film is suppressed. Therefore, the yield of the semiconductor device manufactured using the said adhesive film with a dicing film can be improved.

In the above-described configuration, the adhesive film, the first has a thickness T ₁ is thicker than the thickness T of the semiconductor element, wherein the adherend and the first semiconductor element is connected wire bonding, and the thickness T And the thickness T ₁ is preferably 40 μm or more and 260 μm or less.

Also, keep the configuration, the adhesive film has a thickness T ₁ is thicker than the thickness T of the first semiconductor element, the and the adherend and the first semiconductor element is flip-chip connected, and the and the difference of the thickness of _{T 1} and the thickness T is 10μm or more 200μm or less.

  Thereby, the first semiconductor element can be suitably embedded.

  The present invention also includes a semiconductor device obtained by the method for manufacturing the semiconductor device.

It is a perspective view showing the outline of the film roll for semiconductor devices which concerns on this embodiment. (A) is a top view which shows the outline of the film for semiconductor devices before winding up on a winding core, (b) is the fragmentary sectional view. It is an expanded partial sectional view of FIG. (A)-(c) is the schematic for demonstrating the manufacturing process of the film for semiconductor devices. It is sectional drawing which shows typically 1 process of the manufacturing method of the semiconductor device which concerns on one Embodiment of this invention. It is sectional drawing which shows typically 1 process of the manufacturing method of the semiconductor device which concerns on one Embodiment of this invention. It is sectional drawing which shows typically 1 process of the manufacturing method of the semiconductor device which concerns on one Embodiment of this invention. It is sectional drawing which shows typically 1 process of the manufacturing method of the semiconductor device which concerns on one Embodiment of this invention. It is sectional drawing which shows typically 1 process of the manufacturing method of the semiconductor device which concerns on one Embodiment of this invention. It is sectional drawing which shows typically 1 process of the manufacturing method of the semiconductor device which concerns on one Embodiment of this invention. It is sectional drawing which shows typically 1 process of the manufacturing method of the semiconductor device which concerns on one Embodiment of this invention. It is sectional drawing which shows typically 1 process of the manufacturing method of the semiconductor device which concerns on one Embodiment of this invention. It is sectional drawing which shows typically 1 process of the manufacturing method of the semiconductor device which concerns on another one Embodiment of this invention. It is sectional drawing which shows typically 1 process of the manufacturing method of the semiconductor device which concerns on another one Embodiment of this invention. It is sectional drawing which shows typically 1 process of the manufacturing method of the semiconductor device which concerns on another one Embodiment of this invention. It is sectional drawing which shows typically 1 process of the manufacturing method of the semiconductor device which concerns on another one Embodiment of this invention.

  The film roll for a semiconductor device according to this embodiment will be described below with reference to the drawings. However, in some or all of the drawings, parts unnecessary for the description are omitted, and there are parts shown enlarged or reduced for easy explanation.

  FIG. 1 is a perspective view schematically showing a film roll for a semiconductor device according to this embodiment.

  As shown in FIG. 1, the film roll 10 for semiconductor devices which concerns on this embodiment is the film 20 for semiconductor devices wound around the column-shaped winding core 12 in roll shape. The film for semiconductor device 20 is wound by adhering the winding start edge (the edge of the separator 22 (see FIG. 2A)) of the film for semiconductor device 20 to be wound to the winding core 12, and then winding the film. This is done by rotating the core 12 in the winding direction.

  The winding of the semiconductor device film 20 is preferably performed while applying a winding tension to the semiconductor device film 20. The winding tension is preferably 8 to 100 N / m, more preferably 10 to 90 N / m, and still more preferably 15 to 80 N / m. When the winding tension is 8 N / m or more, it is possible to prevent wrinkles due to distortion in the film 20 for a semiconductor device and disturbance of the winding end surface. On the other hand, when the winding tension is 100 N / m or less, it is possible to prevent the semiconductor device film 20 from being stretched due to excessive tension.

  Fig.2 (a) is a top view which shows the outline of the film for semiconductor devices before winding up to a winding core, FIG.2 (b) is the fragmentary sectional view. The film 20 for a semiconductor device has a configuration in which a plurality of adhesive films 30 with a dicing film are laminated on a separator 22 at a predetermined interval. The adhesive film 30 with a dicing film has a structure in which an adhesive film 40 is laminated on a dicing film 32. The dicing film 32 has a structure in which an adhesive layer 34 is laminated on a base material 33.

  FIG. 3 is an enlarged partial sectional view of FIG. As shown in FIG. 3, in the film 20 for a semiconductor device wound in a roll shape, a step 19 exists between a portion where the adhesive film 30 with a dicing film is laminated and a portion where the adhesive film 30 is not laminated. Moreover, the some adhesive film 30 with a dicing film on the separator 22 is laminated | stacked, mutually shifting | deviating to a horizontal direction. Therefore, the edge of another adhesive film 30 with a dicing film is pressed against one adhesive film 30 with a dicing film through the separator 22.

In the film 20 for a semiconductor device, the number of the adhesive films 30 with a dicing film laminated on the separator 22 is 350 or less, preferably 300 or less, and more preferably 200 or less. As described above, the semiconductor device film 20 is wound into a roll while applying a certain amount of tension. Therefore, when the number of windings is large, the pressure is applied to the lower adhesive film 40 (adhesive film 40 wound in the first direction).
However, in the film roll 10 for a semiconductor device, the number of the adhesive films 40 with a dicing film laminated on the separator 22 is 350 or less. Therefore, it is possible to prevent a large pressure from being applied to the lower adhesive film 40. As a result, transfer marks to the adhesive film 40 can be suppressed.

  The diameter r2 of the film roll 10 for a semiconductor device is preferably 250 mm or less, more preferably 230 mm or less, and further preferably 200 mm or less. When the diameter r2 of the film roll 10 for a semiconductor device is 250 mm or less, the pressure applied to the lower adhesive film 40 can be further reduced.

  The thickness of the adhesive film 40 is preferably 80 to 150 μm, more preferably 90 to 140 μm, and still more preferably 100 to 130 μm. When the thickness of the adhesive film 40 is relatively thick, such as 80 μm or more, a transfer mark when it is wound in a roll shape is easily attached. However, since the number of the dicing film-attached adhesive films 400 laminated on the separator 22 is 350 or less, transfer marks are sufficiently suppressed even when the thickness of the adhesive film 40 is 80 μm or more. Further, when the thickness of the adhesive film 40 is 150 μm or less, it is possible to prevent the edges of the adhesive film 40 from being excessively pressed against the other adhesive film 40 and transferring the winding marks.

  The diameter r1 of the winding core 12 is generally in the range of 70 to 100 mm. Especially, it is preferable that it is 80 mm or more from a viewpoint of preventing that an excessive pressure is applied to the adhesive film 40 of a lower layer. Moreover, it is preferable that it is 100 mm or less from a viewpoint which prevents the diameter of a film roll from becoming large too much and a handleability falls.

  The constituent material of the winding core 12 is not specifically limited, For example, things, such as metal and plastics, can be used.

The adhesive film 40 included in the semiconductor device film 20 embeds the first semiconductor element fixed on the adherend and fixes the second semiconductor element different from the first semiconductor element to the adherend. Can be used. Specifically, as will be described later, it can be used as an embedding adhesive film 40 (see FIG. 5F). When used for this purpose, it will be "used as an adhesive film for embedding".
Moreover, the adhesive film 40 with which the film 20 for semiconductor devices is provided can be used in order to fix a semiconductor element to a to-be-adhered body. For example, it can be used as a first adhesive film 54 (see FIG. 5A) described later. Hereinafter, when used for this purpose, it is referred to as “used as a die bond film”.

When using the adhesive film 40 as a die bond film, the thickness of the adhesive film 40 is preferably 5 to 80 μm, more preferably 10 to 60 μm, and still more preferably 20 to 50 μm. That is, when the adhesive film 40 is used as a die bond film, the thickness can be made relatively thin.
When the adhesive film 40 is used as a die bond film, the thickness can be made relatively thin. Therefore, the number of the adhesive films 30 with a dicing film laminated on the separator 22 is preferably 350 or less, more preferably 300 or less. The number is preferably 200 or less.
Moreover, when using the adhesive film 40 as a die-bonding film, since the thickness can be made relatively thin, the diameter r2 of the film roll 10 for a semiconductor device is preferably 250 mm or less, and preferably 230 mm or less. More preferably, it is 200 mm or less.

When the adhesive film 40 is used as an adhesive film for embedding, the thickness of the adhesive film 40 is preferably 80 to 150 μm, more preferably 90 to 140 μm, and further preferably 100 to 130 μm. preferable. That is, when using the adhesive film 40 as an adhesive film for embedding, a certain amount of thickness is required.
When the adhesive film 40 is used as an adhesive film for embedding, a certain amount of thickness is required. Therefore, the number of the adhesive films 30 with a dicing film laminated on the separator 22 is preferably 200 or less, more preferably 150 or less. The number is preferably 100 or less.
Further, when the adhesive film 40 is used as an adhesive film for embedding, a certain amount of thickness is required. Therefore, the diameter r2 of the film roll 10 for a semiconductor device is preferably 250 mm or less, and preferably 230 mm or less. More preferably, it is 200 mm or less.

<Adhesive film>
The structure of the adhesive film 40 is not specifically limited, For example, the adhesive film which consists only of a single layer of an adhesive film, the adhesive film of the multilayered structure which laminated | stacked the some adhesive film, etc. are mentioned.

  The adhesive film 40 is a layer having an adhesive function, and examples of the constituent material thereof include those using a combination of a thermoplastic resin and a thermosetting resin. A thermoplastic resin alone can also be used.

(Thermoplastic resin)
Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polyptadiene resin, polycarbonate resin, heat Examples thereof include plastic polyimide resins, polyamide resins such as 6-nylon and 6,6 nylon, phenoxy resins, acrylic resins, saturated polyester resins such as PET and PBT, polyamideimide resins, and fluorine resins. These thermoplastic resins can be used alone or in combination of two or more. Of these thermoplastic resins, an acrylic resin that has few ionic impurities and high heat resistance and can ensure the reliability of the semiconductor element is particularly preferable.

  The acrylic resin is not particularly limited, and includes one or two or more esters of acrylic acid or methacrylic acid having a linear or branched alkyl group having 30 or less carbon atoms, particularly 4 to 18 carbon atoms. Examples include polymers as components. Examples of the alkyl group include a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, a t-butyl group, an isobutyl group, an amyl group, an isoamyl group, a hexyl group, a heptyl group, a cyclohexyl group, and 2-ethylhexyl. Group, octyl group, isooctyl group, nonyl group, isononyl group, decyl group, isodecyl group, undecyl group, lauryl group, tridecyl group, tetradecyl group, stearyl group, octadecyl group, or eicosyl group.

  In addition, the other monomer forming the polymer is not particularly limited, and examples thereof include acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Carboxyl group-containing monomers such as acid anhydride monomers such as maleic anhydride or itaconic anhydride, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4- (meth) acrylic acid 4- Hydroxybutyl, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate or (4-hydroxymethylcyclohexyl) -Methyla Hydroxyl group-containing monomers such as relate, styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropane sulfonic acid, (meth) acrylamide propane sulfonic acid, sulfopropyl (meth) acrylate or (meth) Examples thereof include sulfonic acid group-containing monomers such as acryloyloxynaphthalene sulfonic acid, and phosphoric acid group-containing monomers such as 2-hydroxyethylacryloyl phosphate.

(Thermosetting resin)
Examples of the thermosetting resin include phenol resin, amino resin, unsaturated polyester resin, epoxy resin, polyurethane resin, silicone resin, and thermosetting polyimide resin. These resins can be used alone or in combination of two or more. In particular, an epoxy resin containing a small amount of ionic impurities that corrode semiconductor elements is preferable. Moreover, as a hardening | curing agent of an epoxy resin, a phenol resin is preferable.

  The epoxy resin is not particularly limited as long as it is generally used as an adhesive composition, for example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type. , Biphenyl type, naphthalene type, fluorene type, phenol novolak type, orthocresol novolak type, trishydroxyphenylmethane type, tetraphenylolethane type, etc., bifunctional epoxy resin or polyfunctional epoxy resin, or hydantoin type, trisglycidyl isocyanurate Type or glycidylamine type epoxy resin is used. These can be used alone or in combination of two or more. Of these epoxy resins, novolac type epoxy resins, biphenyl type epoxy resins, trishydroxyphenylmethane type resins or tetraphenylolethane type epoxy resins are particularly preferred. This is because these epoxy resins are rich in reactivity with a phenol resin as a curing agent and are excellent in heat resistance and the like.

  Further, the phenol resin acts as a curing agent for the epoxy resin. For example, a phenol novolac resin, a phenol aralkyl resin, a cresol novolac resin, a tert-butylphenol novolac resin, a novolac type phenol resin such as a nonylphenol novolac resin, and a resol Examples thereof include polyphenol styrene such as type phenol resin and polyparaoxy styrene. These can be used alone or in combination of two or more. Of these phenol resins, phenol novolac resins and phenol aralkyl resins are particularly preferred. This is because the connection reliability of the semiconductor device can be improved.

  The mixing ratio of the epoxy resin and the phenol resin is preferably such that, for example, the hydroxyl group in the phenol resin is 0.5 to 2.0 equivalents per equivalent of epoxy group in the epoxy resin component. More preferred is 0.8 to 1.2 equivalents. That is, if the blending ratio of both is out of the above range, sufficient curing reaction does not proceed and the properties of the cured epoxy resin are likely to deteriorate.

  In addition, in this embodiment, the adhesive film containing an epoxy resin, a phenol resin, and an acrylic resin is especially preferable. Since these resins have few ionic impurities and high heat resistance, the reliability of the semiconductor element can be ensured. A suitable blending ratio in this case is 100 to 1300 parts by weight of the mixed amount of the epoxy resin and the phenol resin with respect to 100 parts by weight of the acrylic resin component.

(Crosslinking agent)
Since the adhesive film of this embodiment is crosslinked to some extent in advance, it is preferable to add a polyfunctional compound that reacts with a functional group at the molecular chain end of the polymer as a crosslinking agent. Thereby, the adhesive property under high temperature can be improved and heat resistance can be improved.

  A conventionally well-known thing can be employ | adopted as said crosslinking agent. In particular, polyisocyanate compounds such as tolylene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1,5-naphthalene diisocyanate, adducts of polyhydric alcohol and diisocyanate are more preferable. The addition amount of the crosslinking agent is usually preferably 0.05 to 7 parts by weight with respect to 100 parts by weight of the polymer. When the amount of the cross-linking agent is more than 7 parts by weight, the adhesive force is lowered, which is not preferable. On the other hand, if it is less than 0.05 parts by weight, the cohesive force is insufficient, which is not preferable. Moreover, you may make it contain other polyfunctional compounds, such as an epoxy resin, together with such a polyisocyanate compound as needed.

(Inorganic filler)
Moreover, an inorganic filler can be suitably mix | blended with the adhesive film of this embodiment according to the use. The blending of the inorganic filler makes it possible to impart conductivity, improve thermal conductivity, adjust the elastic modulus, and the like. Examples of the inorganic filler include ceramics such as silica, clay, gypsum, calcium carbonate, barium sulfate, alumina oxide, beryllium oxide, silicon carbide, and silicon nitride, aluminum, copper, silver, gold, nickel, chromium, and tin. And various inorganic powders made of metals such as zinc, palladium and solder, alloys, and other carbons. These can be used alone or in combination of two or more. Among these, silica, particularly a melting strength is preferably used. Moreover, generation | occurrence | production of static electricity can be suppressed by adding the electroconductive fine particles which consist of aluminum, copper, silver, gold | metal | money, nickel, chromium, tin, zinc etc., and setting it as a conductive adhesive film. In addition, it is preferable that the average particle diameter of an inorganic filler exists in the range of 0.1-80 micrometers.

  The content of the inorganic filler is preferably set to 10 to 80% by weight, more preferably 20 to 60% by weight, based on the total weight of components (excluding the solvent) constituting the adhesive film.

(Thermosetting catalyst)
A thermosetting catalyst may be used as a constituent material of the adhesive film. As the content, when an adhesive film contains an acrylic resin, an epoxy resin, and a phenol resin, 0.01-3 weight part is preferable with respect to 100 weight part of acrylic resin components, and 0.05-1 weight part is more preferable. By setting the content to be equal to or more than the above lower limit, epoxy groups that have not been reacted at the time of die bonding can be polymerized in a subsequent step, and the unreacted epoxy groups can be reduced or eliminated. As a result, the semiconductor element can be bonded and fixed on the adherend to manufacture a semiconductor device without peeling. On the other hand, by making the blending ratio not more than the above upper limit, it is possible to prevent the occurrence of curing inhibition.

  The thermosetting catalyst is not particularly limited, and examples thereof include imidazole compounds, triphenylphosphine compounds, amine compounds, triphenylborane compounds, and trihalogenborane compounds. These can be used alone or in combination of two or more.

  Examples of the imidazole compound include 2-methylimidazole (trade name; 2MZ), 2-undecylimidazole (trade name; C11Z), 2-heptadecylimidazole (trade name; C17Z), and 1,2-dimethylimidazole (product). Name: 1.2 DMZ), 2-ethyl-4-methylimidazole (trade name; 2E4MZ), 2-phenylimidazole (trade name; 2PZ), 2-phenyl-4-methylimidazole (trade name; 2P4MZ), 1- Benzyl-2-methylimidazole (trade name; 1B2MZ), 1-benzyl-2-phenylimidazole (trade name; 1B2PZ), 1-cyanoethyl-2-methylimidazole (trade name; 2MZ-CN), 1-cyanoethyl-2 -Undecylimidazole (trade name: C11Z-CN), 1-cyanoethyl 2-phenylimidazolium trimellitate (trade name; 2PZCNS-PW), 2,4-diamino-6- [2'-methylimidazolyl- (1 ')]-ethyl-s-triazine (trade name; 2MZ-A) ), 2,4-diamino-6- [2'-undecylimidazolyl- (1 ')]-ethyl-s-triazine (trade name; C11Z-A), 2,4-diamino-6- [2'- Ethyl-4′-methylimidazolyl- (1 ′)]-ethyl-s-triazine (trade name; 2E4MZ-A), 2,4-diamino-6- [2′-methylimidazolyl- (1 ′)]-ethyl -S-triazine isocyanuric acid adduct (trade name; 2MA-OK), 2-phenyl-4,5-dihydroxymethylimidazole (trade name; 2PHZ-PW), 2-phenyl-4-methyl-5-hydride Carboxymethyl-methylimidazole (trade name; 2P4MHZ-PW), and the like (all made by Shikoku Kasei Co., Ltd.).

  The triphenylphosphine compound is not particularly limited, and examples thereof include triorganophosphines such as triphenylphosphine, tributylphosphine, tri (p-methylphenyl) phosphine, tri (nonylphenyl) phosphine, and diphenyltolylphosphine. Fin, tetraphenylphosphonium bromide (trade name; TPP-PB), methyltriphenylphosphonium (trade name; TPP-MB), methyltriphenylphosphonium chloride (trade name; TPP-MC), methoxymethyltriphenylphosphonium (trade name) ; TPP-MOC), benzyltriphenylphosphonium chloride (trade name; TPP-ZC) and the like (all manufactured by Hokuko Chemical Co., Ltd.). The triphenylphosphine compound is preferably substantially insoluble in the epoxy resin. It can suppress that thermosetting progresses too much that it is insoluble with respect to an epoxy resin. Examples of the thermosetting catalyst having a triphenylphosphine structure and substantially insoluble in the epoxy resin include methyltriphenylphosphonium (trade name: TPP-MB). The “insoluble” means that the thermosetting catalyst composed of a triphenylphosphine compound is insoluble in a solvent composed of an epoxy resin, and more specifically, a temperature range of 10 to 40 ° C. It means that 10% by weight or more does not dissolve.

  The triphenylborane compound is not particularly limited, and examples thereof include tri (p-methylphenyl) phosphine. The triphenylborane compound further includes those having a triphenylphosphine structure. The compound having the triphenylphosphine structure and the triphenylborane structure is not particularly limited. For example, tetraphenylphosphonium tetraphenylborate (trade name; TPP-K), tetraphenylphosphonium tetra-p-triborate (trade name; (TPP-MK), benzyltriphenylphosphonium tetraphenylborate (trade name; TPP-ZK), triphenylphosphine triphenylborane (trade name; TPP-S), and the like (all manufactured by Hokuko Chemical Co., Ltd.).

  The amino compound is not particularly limited, and examples thereof include monoethanolamine trifluoroborate (manufactured by Stella Chemifa Corporation), dicyandiamide (manufactured by Nacalai Tesque Corporation), and the like.

  The trihalogen borane compound is not particularly limited, and examples thereof include trichloroborane.

(Other additives)
In addition to the said inorganic filler, another additive can be suitably mix | blended with the adhesive film of this embodiment as needed. Examples of other additives include a flame retardant, a silane coupling agent, and an ion trap agent.

  Examples of the flame retardant include antimony trioxide, antimony pentoxide, brominated epoxy resin, and the like. These can be used alone or in combination of two or more.

  Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, and the like. These compounds can be used alone or in combination of two or more.

  Examples of the ion trapping agent include hydrotalcites and bismuth hydroxide. These can be used alone or in combination of two or more.

  The storage elastic modulus at 25 ° C. of the adhesive film 40 before thermosetting is preferably 10 MPa or more and 10,000 MPa or less, more preferably 50 MPa or more and 7000 MPa or less, and further preferably 100 MPa or more and 5000 MPa or less. By adopting the above upper limit, flexibility as an adhesive film can be imparted. At the same time, by adopting the above lower limit, it is possible to prevent the adhesive films of adjacent semiconductor elements with an adhesive film from being re-fused at the time before pick-up after dicing. Thus, the softness | flexibility as an adhesive film and pick-up property can be made favorable by making the storage elastic modulus in 25 degreeC into the said range. The measuring method of the storage elastic modulus is as described in the examples.

<Dicing film>
As described above, the dicing film 32 has a structure in which the adhesive layer 34 is laminated on the base material 33.

(Base material)
The base material 33 is a strength matrix of the adhesive film 40 with a dicing film. For example, polyolefins such as low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolyprolene, polybutene, polymethylpentene, ethylene-acetic acid Vinyl copolymer, ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer, ethylene-butene copolymer, ethylene-hexene copolymer, Polyester such as polyurethane, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyetheretherketone, polyimide, polyetherimide, polyamide, wholly aromatic polyamide, polyphenylsulfur De, aramid (paper), glass, glass cloth, fluorine resin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, silicone resin, metal (foil), paper, and the like. When the pressure-sensitive adhesive layer 34 is an ultraviolet curable type, it is preferable that the base material 33 has transparency to ultraviolet rays.

  Moreover, as a material of the base material 33, polymers, such as the crosslinked body of the said resin, are mentioned. The plastic film may be used unstretched or may be uniaxially or biaxially stretched as necessary. According to the resin sheet imparted with heat shrinkability by stretching or the like, the adhesive area between the pressure-sensitive adhesive layer 34 and the adhesive film 40 is reduced by thermally shrinking the base material 33 after dicing, and the semiconductor chip can be recovered. Simplification can be achieved.

  The surface of the base material 33 is chemically treated by conventional surface treatments such as chromic acid treatment, ozone exposure, flame exposure, high piezoelectric impact exposure, ionizing radiation treatment, etc., in order to improve adhesion and retention with adjacent layers. Alternatively, a physical treatment or a coating treatment with a primer (for example, an adhesive substance described later) can be performed.

  As the base material 33, the same kind or different kinds can be appropriately selected and used, and if necessary, a blend of several kinds can be used. The base material 33 is provided with a deposited layer of a conductive material having a thickness of about 30 to 500 mm made of a metal, an alloy, an oxide thereof, or the like on the base material 1 in order to impart an antistatic ability. be able to. The substrate 33 may be a single layer or a multilayer of two or more types.

  The thickness of the base material 33 is preferably 50 to 150 μm, more preferably, in order to ensure film transportability and prevent the occurrence of tearing, tearing, and plastic deformation even during expansion in the pickup process. It is 80-140 micrometers, More preferably, it is 100-130 micrometers.

  In addition, various additives (for example, a colorant, a filler, a plasticizer, an anti-aging agent, an antioxidant, a surfactant, a flame retardant, etc.) are added to the base material 33 as long as the effects of the present invention are not impaired. May be included.

(Adhesive layer)
The pressure-sensitive adhesive used for forming the pressure-sensitive adhesive layer 34 is not particularly limited as long as the adhesive film 40 can be controlled to be peelable. For example, a general pressure-sensitive adhesive such as an acrylic pressure-sensitive adhesive or a rubber-based pressure-sensitive adhesive can be used. As the pressure-sensitive adhesive, an acrylic pressure-sensitive adhesive having an acrylic polymer as a base polymer from the viewpoint of cleanability of an electronic component that is difficult to contaminate semiconductor wafers, glass, etc., with an organic solvent such as ultrapure water or alcohol. Is preferred.

  Examples of the acrylic polymer include those using an acrylic ester as a main monomer component. Examples of the acrylic ester include (meth) acrylic acid alkyl ester (for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester, Isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, hexadecyl ester , Octadecyl esters, eicosyl esters, etc., alkyl groups having 1 to 30 carbon atoms, especially 4 to 18 carbon linear or branched alkyl esters, etc.) and Meth) acrylic acid cycloalkyl esters (e.g., cyclopentyl ester, acrylic polymers such as one or more was used as a monomer component of the cyclohexyl ester etc.). In addition, (meth) acrylic acid ester means acrylic acid ester and / or methacrylic acid ester, and (meth) of the present invention has the same meaning.

  The acrylic polymer includes units corresponding to the other monomer components copolymerizable with the (meth) acrylic acid alkyl ester or cycloalkyl ester, if necessary, for the purpose of modifying cohesive force, heat resistance, and the like. You may go out. Examples of such monomer components include carboxyl group-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid; maleic anhydride Acid anhydride monomers such as itaconic anhydride; 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate Hydroxyl group-containing monomers such as 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, (4-hydroxymethylcyclohexyl) methyl (meth) acrylate; The Sulfonic acid groups such as lensulfonic acid, allylsulfonic acid, 2- (meth) acrylamide-2-methylpropanesulfonic acid, (meth) acrylamidepropanesulfonic acid, sulfopropyl (meth) acrylate, (meth) acryloyloxynaphthalenesulfonic acid Containing monomers; Phosphoric acid group-containing monomers such as 2-hydroxyethylacryloyl phosphate; acrylamide, acrylonitrile and the like. One or more of these copolymerizable monomer components can be used. The amount of these copolymerizable monomers used is preferably 40% by weight or less based on the total monomer components.

  Furthermore, since the acrylic polymer is crosslinked, a polyfunctional monomer or the like can be included as a monomer component for copolymerization as necessary. Examples of such polyfunctional monomers include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, Pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate, polyester (meth) acrylate, urethane (meth) Examples include acrylates. These polyfunctional monomers can also be used alone or in combination of two or more. The amount of the polyfunctional monomer used is preferably 30% by weight or less of the total monomer components from the viewpoint of adhesive properties and the like.

  The acrylic polymer can be obtained by subjecting a single monomer or a mixture of two or more monomers to polymerization. The polymerization can be performed by any method such as solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization and the like. From the viewpoint of preventing contamination of a clean adherend, the content of the low molecular weight substance is preferably small. From this point, the number average molecular weight of the acrylic polymer is preferably 300,000 or more, more preferably about 400,000 to 3,000,000.

  Moreover, in order to increase the number average molecular weight of the acrylic polymer or the like as the base polymer, an external cross-linking agent can be appropriately employed for the pressure-sensitive adhesive. Specific examples of the external crosslinking method include a method in which a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, or a melamine crosslinking agent is added and reacted. When using an external cross-linking agent, the amount used is appropriately determined depending on the balance with the base polymer to be cross-linked, and further depending on the intended use as an adhesive. Generally, about 10 parts by weight or less, and further 0.1 to 10 parts by weight is preferably blended with respect to 100 parts by weight of the base polymer. Furthermore, additives such as various conventionally known tackifiers and anti-aging agents may be used for the pressure-sensitive adhesive, if necessary, in addition to the above components.

  The pressure-sensitive adhesive layer 34 can be formed of a radiation curable pressure-sensitive adhesive. The radiation curable pressure-sensitive adhesive can easily reduce its adhesive strength by increasing the degree of cross-linking by irradiation of radiation such as ultraviolet rays, and only the portion corresponding to the semiconductor wafer attachment portion of the pressure-sensitive adhesive layer 34 is irradiated with ultraviolet rays. By doing so, the difference of the adhesive force with another part can be provided.

  Here, the adhesive film 40 can have the same shape as the semiconductor wafer to be attached in a plan view or a shape that is one size larger. In this case, by curing the ultraviolet curable pressure-sensitive adhesive layer 34 in accordance with the shape of the adhesive film 40, it is possible to easily reduce the adhesive strength of the portion corresponding to the semiconductor wafer attachment portion. Since the adhesive film 40 is affixed to the portion where the adhesive strength is reduced, the interface between the portion of the pressure-sensitive adhesive layer 34 and the adhesive film 40 has a property of easily peeling off at the time of pickup. On the other hand, the part which is not irradiated with ultraviolet rays has sufficient adhesive force. A wafer ring is fixed to a portion not irradiated with ultraviolet rays.

  As the radiation-curable pressure-sensitive adhesive, those having a radiation-curable functional group such as a carbon-carbon double bond and exhibiting adhesiveness can be used without particular limitation. Examples of the radiation curable pressure-sensitive adhesive include additive-type radiation curable pressure-sensitive adhesives in which radiation-curable monomer components and oligomer components are blended with general pressure-sensitive pressure-sensitive adhesives such as the above-mentioned acrylic pressure-sensitive adhesives and rubber-based pressure-sensitive adhesives. An agent can be illustrated.

  Examples of the radiation curable monomer component to be blended include urethane oligomer, urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, tetramethylolmethane tetra (meth) acrylate, pentaerythritol tri (meth) acrylate, and pentaerythritol. Examples include stall tetra (meth) acrylate, dipentaerystol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1,4-butanediol di (meth) acrylate, and the like. Examples of the radiation curable oligomer component include various oligomers such as urethane, polyether, polyester, polycarbonate, and polybutadiene, and those having a weight average molecular weight in the range of about 100 to 30000 are suitable. The compounding amount of the radiation curable monomer component or oligomer component can be appropriately determined in such an amount that the adhesive force of the pressure-sensitive adhesive layer can be reduced depending on the type of the pressure-sensitive adhesive layer. Generally, the amount is, for example, about 5 to 500 parts by weight, preferably about 40 to 150 parts by weight with respect to 100 parts by weight of the base polymer such as an acrylic polymer constituting the pressure-sensitive adhesive.

  In addition to the additive-type radiation-curable adhesive described above, the radiation-curable adhesive has a carbon-carbon double bond in the polymer side chain, main chain, or main chain terminal as a base polymer. Intrinsic radiation curable adhesives using Intrinsic radiation curable adhesives do not need to contain oligomer components, which are low molecular components, or do not contain many, so they are stable without the oligomer components, etc. moving through the adhesive over time. This is preferable because an adhesive layer having a layered structure can be formed.

  As the base polymer having a carbon-carbon double bond, those having a carbon-carbon double bond and having adhesiveness can be used without particular limitation. As such a base polymer, an acrylic polymer having a basic skeleton is preferable. Examples of the basic skeleton of the acrylic polymer include the acrylic polymers exemplified above.

  The method for introducing a carbon-carbon double bond into the acrylic polymer is not particularly limited, and various methods can be adopted. However, it is easy to design a molecule by introducing a carbon-carbon double bond into a polymer side chain. . For example, after a monomer having a functional group is copolymerized in advance with an acrylic polymer, a compound having a functional group capable of reacting with the functional group and a carbon-carbon double bond is converted into a radiation-curable carbon-carbon double bond. Examples of the method include condensation or addition reaction while maintaining the above.

  Examples of combinations of these functional groups include carboxylic acid groups and epoxy groups, carboxylic acid groups and aziridyl groups, hydroxyl groups and isocyanate groups. Among these combinations of functional groups, a combination of a hydroxyl group and an isocyanate group is preferable because of easy tracking of the reaction. In addition, the functional group may be on either side of the acrylic polymer and the compound as long as the acrylic polymer having the carbon-carbon double bond is generated by a combination of these functional groups. In the above preferred combination, it is preferable that the acrylic polymer has a hydroxyl group and the compound has an isocyanate group. In this case, examples of the isocyanate compound having a carbon-carbon double bond include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, m-isopropenyl-α, α-dimethylbenzyl isocyanate, and the like. As the acrylic polymer, those obtained by copolymerizing the above-exemplified hydroxy group-containing monomers, ether compounds of 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, diethylene glycol monovinyl ether, or the like are used.

  As the internal radiation curable pressure-sensitive adhesive, the base polymer (particularly acrylic polymer) having the carbon-carbon double bond can be used alone, but the radiation curable monomer is not deteriorated. Components and oligomer components can also be blended. The radiation-curable oligomer component or the like is usually in the range of 30 parts by weight, preferably in the range of 0 to 10 parts by weight with respect to 100 parts by weight of the base polymer.

  The radiation curable pressure-sensitive adhesive preferably contains a photopolymerization initiator when cured by ultraviolet rays or the like. Examples of the photopolymerization initiator include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α′-dimethylacetophenone, 2-methyl-2-hydroxypropio Α-ketol compounds such as phenone and 1-hydroxycyclohexyl phenyl ketone; methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1- [4- ( Acetophenone compounds such as methylthio) -phenyl] -2-morpholinopropane-1; benzoin ether compounds such as benzoin ethyl ether, benzoin isopropyl ether and anisoin methyl ether; ketal compounds such as benzyldimethyl ketal; 2-naphthalenesulfo D Aromatic sulfonyl chloride compounds such as luchloride; photoactive oxime compounds such as 1-phenyl-1,2-propanedione-2- (O-ethoxycarbonyl) oxime; benzophenone, benzoylbenzoic acid, 3,3′-dimethyl Benzophenone compounds such as -4-methoxybenzophenone; thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2 Thioxanthone compounds such as 1,4-diethylthioxanthone and 2,4-diisopropylthioxanthone; camphorquinone; halogenated ketone; acyl phosphinoxide; acyl phosphonate. The compounding quantity of a photoinitiator is about 0.05-20 weight part with respect to 100 weight part of base polymers, such as an acryl-type polymer which comprises an adhesive.

  In addition, when curing inhibition by oxygen occurs during irradiation, it is desirable to block oxygen (air) from the surface of the radiation curable pressure-sensitive adhesive layer 34 by some method. For example, a method of covering the surface of the pressure-sensitive adhesive layer 34 with a separator, a method of irradiating radiation such as ultraviolet rays in a nitrogen gas atmosphere, and the like can be mentioned.

  The thickness of the pressure-sensitive adhesive layer 34 is not particularly limited, but is preferably about 1 to 50 μm from the viewpoint of preventing chipping of the chip cut surface and compatibility of fixing and holding the adhesive layer. Preferably it is 2-40 micrometers, More preferably, it is 5-30 micrometers.

  The total thickness of the base material 33 and the pressure-sensitive adhesive layer 34, that is, the thickness of the dicing film 32 is determined from the viewpoints of transportability, chip chipping surface chipping prevention, fixing and holding of the adhesive film, and pick-up properties. 55-180 micrometers is preferable, More preferably, it is 70-150 micrometers, More preferably, it is 100-130 micrometers.

(Separator)
A plurality of adhesive films 30 with a dicing film are laminated on the separator 22 (see FIG. 2A). The separator 22 corresponds to the separator of the present invention. The separator 22 has a function as a protective material that protects the adhesive film 40 until it is put into practical use. The adhesive film 30 with a dicing film is peeled off from the separator 22 when a semiconductor wafer is stuck on the adhesive film 40. As the separator 22, a plastic film, paper, or the like whose surface is coated with a release agent such as polyethylene terephthalate (PET film), polyethylene film, polypropylene film, polyimide film, fluorine-type release agent, and long-chain alkyl acrylate release agent can be used. It is.

  The tensile storage modulus at 25 ° C. of the separator 22 is preferably 1 GPa or more, more preferably in the range of 1 GPa to 10 GPa, and still more preferably in the range of 1 GPa to 5 GPa. By setting the tensile storage elastic modulus at 25 ° C. of the separator 22 to 1 GPa or more, the transfer of the winding mark via the separator 22 to the adhesive film 40 can be further suppressed. In addition, by setting the tensile storage modulus at 25 ° C. of the separator 22 to 10 GPa or less, it is possible to further prevent the separator 22 from being folded when the adhesive film 40 is bonded to the separator 22. The adhesive film 40 can be damaged or air bubbles can be prevented from being mixed between the films.

  The thickness of the separator 22 is preferably 10 to 60 μm, more preferably 20 to 50 μm, and still more preferably 30 to 40 μm. When the thickness of the separator is 10 μm or more, the transfer of the trace through the separator can be further suppressed. On the other hand, when the thickness of the separator is 60 μm or less, an increase in the diameter of the film roll for a semiconductor device can be suppressed.

<Method for Manufacturing Film for Semiconductor Device>
Next, the manufacturing method of the film 20 for semiconductor devices which concerns on this embodiment is demonstrated below. FIG. 4A to FIG. 4C are schematic views for explaining a manufacturing process of a film for a semiconductor device.
In the method for manufacturing the semiconductor device film 20 according to the present embodiment, the adhesive layer 34 is formed on the base material 33 to form the dicing film 32, and the adhesive film 40 is formed on the base material separator 42. A step, a step of punching the adhesive film 40 in accordance with the shape of the semiconductor wafer to be bonded, a step of laminating the adhesive layer 34 of the dicing film 32 and the adhesive film 40 as a bonding surface, and a circular shape corresponding to the ring frame A step of punching the dicing film 32, a step of producing the adhesive film 30 with the dicing film by peeling the base separator 42 on the adhesive film 40, and an adhesion with the dicing film on the separator 22 at a predetermined interval. And a step of bonding the film 30 together.

  The manufacturing process of the dicing film 32 is performed as follows, for example. First, the base material 33 can be formed by a conventionally known film forming method. Examples of the film forming method include a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, and a dry lamination method.

  Next, after a pressure-sensitive adhesive composition solution is applied onto the substrate 33 to form a coating film, the coating film is dried under a predetermined condition (heat-crosslinked as necessary), and the pressure-sensitive adhesive layer 34 is formed. Form. It does not specifically limit as a coating method, For example, roll coating, screen coating, gravure coating, etc. are mentioned. Further, the drying conditions can be appropriately set according to the thickness and material of the coating film. Specifically, for example, the drying temperature is 80 to 150 ° C. and the drying time is 0.5 to 5 minutes. Alternatively, the pressure-sensitive adhesive composition may be applied to the first base separator 38 to form a coating film, and then the coating film may be dried under the drying conditions to form the pressure-sensitive adhesive layer 34. Thereafter, the pressure-sensitive adhesive layer 34 is bonded to the base material 33 together with the first base material separator 38. Thereby, the dicing film 32 in which the pressure-sensitive adhesive layer 34 is protected by the first base material separator 38 is produced (see FIG. 4A). The produced dicing film 32 may have a long form wound in a roll shape. In this case, it is preferable to wind the dicing film 32 while applying a tensile tension in the longitudinal direction or the width direction so that no slack, winding deviation, or positional deviation occurs. However, by applying a tensile tension, the dicing film 32 is wound in a roll shape with a residual tensile strain remaining. In addition, when the dicing film 32 is wound, the dicing film 32 may be stretched by applying the tensile tension, but the winding is not intended for a stretching operation.

When the pressure-sensitive adhesive layer 34 is made of an ultraviolet-curing pressure-sensitive adhesive and is ultraviolet-cured in advance, it is formed as follows. That is, after an ultraviolet curable pressure-sensitive adhesive composition is applied on the substrate 33 to form a coating film, the coating film is dried under a predetermined condition (heat-crosslinked as necessary) to form a pressure-sensitive adhesive layer. Form. The coating method, coating conditions, and drying conditions can be performed in the same manner as described above. Moreover, after apply | coating an ultraviolet curable adhesive composition on the 1st base material separator 38 and forming a coating film, a coating film may be dried on the said drying conditions, and an adhesive layer may be formed. Thereafter, the pressure-sensitive adhesive layer is transferred onto the substrate 33. Further, the pressure-sensitive adhesive layer may be irradiated with ultraviolet rays under predetermined conditions. No particular limitation is imposed on the irradiation conditions of the ultraviolet ray usually is preferably within the range of accumulated light quantity is 30~1000mJ / cm ^2, more preferably within the range of a 50 to 800 mJ / cm ^2, and 100 to 500 mJ / cm ² More preferably within the range. By adjusting the integrated light quantity within the numerical range, the peeling force between the adhesive film 40 and the dicing film 32 can be controlled to an appropriate value.

  The production process of the adhesive film 40 is performed as follows. That is, an adhesive composition solution for forming the adhesive film 40 is applied on the base separator 42 so as to have a predetermined thickness, thereby forming a coating film. Thereafter, the coating film is dried under predetermined conditions to form the adhesive film 40. It does not specifically limit as a coating method, For example, roll coating, screen coating, gravure coating, etc. are mentioned. Further, the drying conditions can be appropriately set according to the thickness and material of the coating film. Specifically, for example, the drying is performed within a range of 70 to 160 ° C. and a drying time of 1 to 5 minutes. Alternatively, the adhesive film 40 may be formed by applying a pressure-sensitive adhesive composition on the second separator 44 to form a coating film, and then drying the coating film under the drying conditions. Thereafter, the adhesive film 40 is bonded to the base separator 42 together with the second separator 44. Thereby, the laminated | multilayer film by which the adhesive film 40 and the 2nd separator 44 were laminated | stacked in order on the base material separator 42 are produced (refer FIG.4 (b)). This laminated film may have a long form wound in a roll shape. In this case, it is preferable to wind the adhesive film 40 while applying a tensile tension in the longitudinal direction or the width direction so that the adhesive film 40 is not loosened, wound, or displaced.

  Next, the adhesive film 40 is punched in accordance with the shape of the semiconductor wafer to be attached, and a plurality of the adhesive films 40 are attached to the dicing film 32 with a predetermined interval (see FIG. 4C). That is, the first substrate separator 38 is peeled off from the dicing film 32, and the second separator 44 is peeled off from the punched adhesive film 40 so that the adhesive film 40 and the pressure-sensitive adhesive layer 34 become a bonding surface. Bond them together. At this time, crimping is performed on at least one of the dicing film 32 and the adhesive film 40 while applying a tensile tension to the peripheral edge. Moreover, when the dicing film 32 is the long thing wound by roll shape, it is preferable to convey to the dicing film 32, without applying tension tension as much as possible in the longitudinal direction. This is to suppress the residual tensile strain of the film. However, from the viewpoint of preventing the dicing film 32 from generating slack, winding deviation, position deviation, void (bubble), etc., a tensile tension may be applied within a range of 10 to 25N. Within this range, even if tensile residual strain remains in the dicing film 32, it is possible to prevent the occurrence of interface peeling between the dicing film 32 and the adhesive film 40.

  The dicing film 32 and the adhesive film 40 can be bonded together by, for example, pressure bonding. At this time, the lamination temperature is not particularly limited, but is usually preferably 30 to 80 ° C, more preferably 30 to 60 ° C, and particularly preferably 30 to 50 ° C. Moreover, although a linear pressure is not specifically limited, Usually, 0.1-20 kgf / cm is preferable and 1-10 kgf / cm is more preferable.

  Next, the base material separator 42 on the adhesive film 40 is peeled off and bonded to the separator 22 while applying a tensile tension. Subsequently, the dicing film 32 is punched into a circular shape corresponding to the ring frame at a predetermined interval. Thereby, the film 20 for semiconductor devices (refer FIG. 2A) by which the pre-cut adhesive film 30 with a dicing film was laminated | stacked on the separator 22 at predetermined intervals is produced.

  The bonding of the dicing film-attached adhesive film 30 (adhesive film 40) to the separator 22 is preferably performed by pressure bonding. At this time, the lamination temperature is not particularly limited, but is usually preferably 20 to 80 ° C, more preferably 20 to 60 ° C, and particularly preferably 20 to 50 ° C. Moreover, although a linear pressure is not specifically limited, Usually, 0.1-20 kgf / cm is preferable and 0.2-10 kgf / cm is more preferable.

  The first base material separator 38 bonded to the adhesive layer 34 of the dicing film 32, the base material separator 42 of the adhesive film 40, and the second separator 44 bonded to the adhesive film 40 are particularly limited. Alternatively, a conventionally known release-treated film can be used. The first base separator 38 and the second separator 44 each have a function as a protective material. Moreover, the base material separator 42 has a function as a base material when the adhesive film 40 is transferred onto the pressure-sensitive adhesive layer 34 of the dicing film 32. The material constituting each of these films is not particularly limited, and conventionally known materials can be employed. Specifically, for example, polyethylene terephthalate (PET), polyethylene, polypropylene, a plastic film or paper surface-coated with a release agent such as a fluorine-type release agent or a long-chain alkyl acrylate release agent can be used.

<Method for Manufacturing Semiconductor Device>
[First Embodiment]
1st Embodiment demonstrates the aspect which aims at the electrical connection of a to-be-adhered body and a 1st semiconductor element by wire bonding connection.

  In the method for manufacturing a semiconductor device according to the present embodiment, an adherend on which at least one first semiconductor element is mounted (fixed) is prepared in advance through a first fixing step and a first wire bonding step (covered). A first semiconductor element is embedded in the first semiconductor element by an adhesive film that has been subjected to dicing and pick-up, and a second semiconductor element different from the first semiconductor element is embedded in the adherend. Fix it. FIG. 5A to FIG. 5H are cross-sectional views schematically showing one step of the method of manufacturing a semiconductor device according to one embodiment of the present invention.

(First fixing step)
As shown in FIG. 5A, in the first fixing step, at least one first semiconductor element 52 is fixed on the adherend 50. The first semiconductor element 52 is fixed to the adherend 50 via the first adhesive film 54. Although only one first semiconductor element 52 is shown in FIG. 5A, two, three, four, five or more first semiconductor elements 52 are provided depending on the specifications of the target semiconductor device. May be fixed to the adherend 50.

(First semiconductor element)
The first semiconductor element 52 is not particularly limited as long as it is an element having a smaller size in plan view than the semiconductor element stacked in the second stage (second semiconductor element 62; see FIG. 5F). A certain controller, memory chip, or logic chip can be suitably used. Since the controller controls the operation of each stacked semiconductor element, a large number of wires are generally connected. The communication speed of the semiconductor package is affected by the wire length. In the present embodiment, the first semiconductor element 52 is fixed to the adherend 50 and positioned at the lowermost stage, so that the wire length can be shortened. Even if the number of stacked elements is increased, a decrease in the communication speed of the semiconductor package (semiconductor device) can be suppressed.

  Although the thickness of the 1st semiconductor element 52 is not specifically limited, Usually, there are many cases of 100 micrometers or less. In addition, with the recent thinning of semiconductor packages, first semiconductor elements 52 of 75 μm or less, and further 50 μm or less are being used.

(Adherent)
Examples of the adherend 50 include a substrate, a lead frame, and other semiconductor elements. As the substrate, a conventionally known substrate such as a printed wiring board can be used. As the lead frame, a metal lead frame such as a Cu lead frame or a 42 Alloy lead frame, or an organic substrate made of glass epoxy, BT (bismaleimide-triazine), polyimide, or the like can be used. However, the present embodiment is not limited to this, and includes a circuit board that can be used by mounting a semiconductor element and electrically connecting the semiconductor element.

(First adhesive film)
As the first adhesive film 54, the embedding adhesive film may be used, or a conventionally known adhesive film for fixing a semiconductor element may be used. However, when the embedding adhesive film is used, the first adhesive film 54 does not need to embed a semiconductor element, and therefore, the thickness may be reduced to about 5 μm to 60 μm.

(Fixing method)
As shown in FIG. 5A, the first semiconductor element 52 is die-bonded to the adherend 50 via the first adhesive film 54. As a method of fixing the first semiconductor element 52 on the adherend 50, for example, after laminating the first adhesive film 54 on the adherend 50, the wire bond surface is on the upper side of the first adhesive film 54. A method of stacking the first semiconductor elements 52 in such a manner is mentioned. Alternatively, the first semiconductor element 52 having the first adhesive film 54 attached in advance may be disposed on the adherend 50 and stacked.

  Since the first adhesive film 54 is in a semi-cured state, after the first adhesive film 54 is placed on the adherend 50, the first adhesive film 54 is thermally cured by performing a heat treatment under a predetermined condition. Thus, the first semiconductor element 52 is fixed on the adherend 50. The temperature at which the heat treatment is performed is preferably 100 to 200 ° C, more preferably 120 to 180 ° C. The heat treatment time is preferably 0.25 to 10 hours, more preferably 0.5 to 8 hours.

(First wire bonding process)
The first wire bonding step is a step of electrically connecting the tip of the terminal portion (for example, inner lead) of the adherend 50 and an electrode pad (not shown) on the first semiconductor element 52 with the bonding wire 56. (See FIG. 5B). As the bonding wire 56, for example, a gold wire, an aluminum wire, a copper wire, or the like is used. The temperature at the time of wire bonding is 80 to 250 ° C, preferably 80 to 220 ° C. The heating time is several seconds to several minutes. The connection is performed by a combination of vibration energy by ultrasonic waves and crimping energy by applying pressure while being heated so as to be within the temperature range.

(Wafer bonding process)
On the other hand, the adhesive film 30 with a dicing film is peeled from the film roll 10 for a semiconductor device. Next, as shown to FIG. 5C, the semiconductor wafer 60 is crimped | bonded on the adhesive film 40 for embedding in the adhesive film 30 with a dicing film, this is adhere | attached and hold | maintained (bonding process). This step is performed while pressing with a pressing means such as a pressure roll.

(Dicing process)
Next, as shown in FIG. 5D, the semiconductor wafer 60 is diced. Thereby, the semiconductor wafer 60 is cut into a predetermined size and separated into individual pieces, and the semiconductor chip 62 is manufactured (dicing step). Dicing is performed according to a conventional method from the circuit surface side of the semiconductor wafer 60, for example. Further, in this step, for example, a cutting method called full cut for cutting up to the dicing film 32 can be adopted. It does not specifically limit as a dicing apparatus used at this process, A conventionally well-known thing can be used. Further, since the semiconductor wafer is bonded and fixed by the adhesive film 30 with the dicing film, chip chipping and chip jump can be suppressed, and damage to the semiconductor wafer 60 can also be suppressed. Moreover, since the embedding adhesive film 40 is used, re-adhesion after dicing can be prevented, and the next pickup process can be performed satisfactorily.

(Pickup process)
As shown in FIG. 5E, the semiconductor chip 62 is picked up together with the embedding adhesive film 40 in order to peel off the semiconductor chip 62 adhered and fixed to the adhesive film 30 with a dicing film (pickup step). The pickup method is not particularly limited, and various conventionally known methods can be employed. For example, a method of pushing up each semiconductor chip 62 from the base material 33 side with a needle and picking up the pushed-up semiconductor chip 62 with a pickup device can be mentioned.

  Here, when the pressure-sensitive adhesive layer 34 is an ultraviolet curable type, the pickup may be performed after the pressure-sensitive adhesive layer 34 is irradiated with ultraviolet rays. Thereby, the adhesive force with respect to the adhesive film 40 of the adhesive layer 34 falls, and peeling of the semiconductor chip 62 becomes easy. As a result, the pickup can be performed without damaging the semiconductor chip. Conditions such as irradiation intensity and irradiation time at the time of ultraviolet irradiation are not particularly limited, and may be set as necessary. Moreover, as a light source used for ultraviolet irradiation, a high-pressure mercury lamp, a microwave excitation lamp, a chemical lamp, or the like can be used. Further, when the adhesive layer 34 has been irradiated with ultraviolet rays in advance, the pickup may be performed without performing ultraviolet irradiation.

(Second fixing step)
In the second fixing step, the first semiconductor element 52 is separately fixed on the adherend 50 via the embedding adhesive film 40 picked up together with the second semiconductor element 62 while the first semiconductor element 52 is embedded. A second semiconductor element 62 different from the element 52 is fixed to the adherend 50 (see FIG. 5F). The embedding adhesive film 40 has a thickness T that is greater than the thickness T ₁ of the first semiconductor element 52. In the present embodiment, the since the electrical connection between the adherend 50 and the first semiconductor element 52 is achieved by wire bonding connection, the difference between the between the thickness T and the thickness T ₁ 40 [mu] m or more 260μm The following is preferred. Although the lower limit of the difference between the the thickness T and the thickness T ₁ is preferably at least 40 [mu] m, more preferably at least 50 [mu] m, and even more preferably 60 [mu] m. The upper limit of the difference between the thickness _{T 1} and the thickness T although less preferably 260 .mu.m, more preferably not more than 200 [mu] m, more preferably 150μm or less. Accordingly, the entire first semiconductor element 52 is embedded in the embedding adhesive film 40 while preventing the first semiconductor element 52 and the second semiconductor element 62 from contacting each other while reducing the thickness of the entire semiconductor device. It is possible to fix the first semiconductor element 52 as a controller onto the adherend 50 (that is, fixing at the lowest stage where the wire length is the shortest).

The thickness T of the embedding adhesive film 40 may be set as appropriate in consideration of the thickness T ₁ and the wire protruding amount of the first semiconductor element 52 so as to be embedded first semiconductor element 52, but the lower limit Is preferably 80 μm or more, more preferably 100 μm or more, and even more preferably 620 μm or more. On the other hand, the upper limit of the thickness T is preferably 300 μm or less, more preferably 200 μm or less, and even more preferably 150 μm or less. By making the adhesive film relatively thick in this way, the thickness of a general controller can be almost covered, and the first semiconductor element 52 can be easily embedded in the embedding adhesive film 40. it can.

(Second semiconductor element)
The second semiconductor element 62 is not particularly limited, and for example, a memory chip that receives operation control of the first semiconductor element 52 as a controller can be used.

(Fixing method)
As a method of fixing the second semiconductor element 62 on the adherend 50, for example, after the embedding adhesive film 40 is laminated on the adherend 50, as in the first fixing step, this embedding adhesive film. The method of laminating | stacking the 2nd semiconductor element 62 on 40 so that a wire bond surface may become an upper side is mentioned. Alternatively, the second semiconductor element 62 with the embedding adhesive film 40 attached in advance may be disposed on the adherend 50 and laminated.

  In order to facilitate the entry and embedding of the first semiconductor element 52 into the embedding adhesive film 40, it is preferable to perform a heat treatment on the embedding adhesive film 40 during die bonding. The heating temperature may be a temperature at which the embedding adhesive film 40 is softened and does not completely thermoset, and is preferably 80 ° C. or higher and 150 ° C. or lower, more preferably 100 ° C. or higher and 130 ° C. or lower. At this time, you may pressurize by 0.1 MPa or more and 1.0 MPa or less.

  Since the embedding adhesive film 40 is in a semi-cured state, after the embedding adhesive film 40 is placed on the adherend 50, the embedding adhesive film 40 is subjected to a heat treatment under a predetermined condition to thereby fix the embedding adhesive film 40. The second semiconductor element 62 is fixed on the adherend 50 by thermosetting. The temperature at which the heat treatment is performed is preferably 100 to 200 ° C, more preferably 120 to 180 ° C. The heat treatment time is preferably 0.25 to 10 hours, more preferably 0.5 to 8 hours.

  At this time, the shear adhesive force of the adhesive film 40 for embedding after thermosetting to the adherend 50 is preferably 0.1 MPa or more at 25 to 250 ° C., and more preferably 0.2 to 10 MPa. . Assuming that the shear adhesive force of the embedding adhesive film 40 is 0.1 MPa or more, the embedding adhesive film 40 and the second semiconductor element 62 or the deposition are applied by ultrasonic vibration or heating in the wire bonding process for the second semiconductor element 62. Generation | occurrence | production of the shear deformation in the adhesion surface with the body 50 can be suppressed. That is, it is possible to suppress the movement of the second semiconductor element 62 due to the ultrasonic vibration during the wire bonding, thereby preventing the success rate of the wire bonding from being lowered.

(Third fixing step)
In the third fixing step, a third semiconductor element 73 of the same type or different type from the second semiconductor element is fixed on the second semiconductor element 62 (see FIG. 5G). The third semiconductor element 73 is fixed to the second semiconductor element 62 via the third adhesive film 74.

(Third semiconductor element)
The third semiconductor element 73 may be the same type of memory chip as the second semiconductor element 62 or a different type of memory chip from the second semiconductor element 62. The thickness of the third semiconductor element 73 can also be appropriately set according to the specifications of the target semiconductor device.

(Third adhesive film)
As the 3rd adhesive film 74, the thing similar to the 1st adhesive film 54 in a 1st fixing process can be used conveniently. When the embedding adhesive film 40 is used as the third adhesive film 74, it is not necessary to embed other semiconductor elements, so that the thickness may be reduced from about 5 μm to about 60 μm.

(Fixing method)
As shown in FIG. 5G, the third semiconductor element 73 is die-bonded to the second semiconductor element 62 via the third adhesive film 74. As a method of fixing the third semiconductor element 73 on the second semiconductor element 62, for example, after a third adhesive film 74 is laminated on the second semiconductor element 62, a wire bond surface is formed on the third adhesive film 74. A method of stacking the third semiconductor element 73 so as to be on the upper side is mentioned. Alternatively, the third semiconductor element 73 to which the third adhesive film 74 is previously attached may be disposed and stacked on the second semiconductor element 62. However, for wire bonding between the second semiconductor element 62 and the third semiconductor element 73, which will be described later, the third semiconductor element 73 is avoided so as to avoid electrode pads on the wire bond surface (upper surface) of the second semiconductor element 62. May be displaced and fixed with respect to the second semiconductor element 62. In this case, if the third adhesive film 74 is first attached to the upper surface of the second semiconductor element 62, the portion of the third adhesive film 74 that protrudes from the upper surface of the second semiconductor element 62 (so-called overhang portion) is bent. Then, it may adhere to the side surface of the second semiconductor element 62 or the side surface of the embedding adhesive film 40, and an unexpected malfunction may occur. Therefore, in the third fixing step, it is preferable that the third adhesive film 74 is attached in advance to the third semiconductor element 73 and disposed and laminated on the second semiconductor element 62.

  Since the third adhesive film 74 is also in a semi-cured state, after the third adhesive film 74 is placed on the second semiconductor element 62, the third adhesive film 74 is thermally cured by performing a heat treatment under a predetermined condition. Thus, the third semiconductor element 73 is fixed on the second semiconductor element 62. In consideration of the elastic modulus and process efficiency of the third adhesive film 74, the third semiconductor element 73 can be fixed without performing heat treatment. The temperature at which the heat treatment is performed is preferably 100 to 200 ° C, more preferably 620 ° C to 180 ° C. The heat treatment time is preferably 0.25 to 10 hours, more preferably 0.5 to 8 hours.

(Second wire bonding process)
The second wire bonding step is a step of electrically connecting an electrode pad (not shown) on the second semiconductor element 62 and an electrode pad (not shown) on the third semiconductor element 73 with a bonding wire 75 ( (See FIG. 5H). As the wire material and wire bonding conditions, the same materials as those in the first wire bonding step can be preferably used.

(Semiconductor device)
Through the above steps, the semiconductor device 100 in which three semiconductor elements are stacked in multiple stages via a predetermined adhesive film can be manufactured. Furthermore, a semiconductor device in which four or more semiconductor elements are stacked can be manufactured by repeating the same procedure as the third fixing step and the second wire bonding step.

(Sealing process)
After laminating a desired number of semiconductor elements, a sealing step of resin-sealing the entire semiconductor device 100 may be performed. The sealing step is a step of sealing the semiconductor device 100 with a sealing resin (not shown). This step is performed to protect the semiconductor elements and bonding wires mounted on the adherend 50. This step is performed, for example, by molding a sealing resin with a mold. As the sealing resin, for example, an epoxy resin is used. Although the heating temperature at the time of resin sealing is normally performed at 175 ° C. for 60 to 90 seconds, the present embodiment is not limited to this, and can be cured at 165 to 185 ° C. for several minutes, for example. In this step, pressure may be applied during resin sealing. In this case, the pressure to pressurize is preferably 1 to 15 MPa, and more preferably 3 to 10 MPa.

(Post-curing process)
In the present embodiment, a post-curing step of after-curing the sealing resin may be performed after the sealing step. In this step, the sealing resin insufficiently cured in the sealing step is completely cured. Although the heating temperature in this process changes with kinds of sealing resin, it exists in the range of 165-185 degreeC, for example, and heating time is about 0.5 to 8 hours. A semiconductor package can be manufactured through a sealing process or a post-curing process.

[Second Embodiment]
In the first embodiment, the first semiconductor element is fixed to the adherend by an adhesive film, and the electrical connection between the two is achieved by wire bonding. In the second embodiment, the first semiconductor element is provided on the first semiconductor element. The two are fixed and electrically connected by flip-chip connection using the protruding electrodes. Therefore, since the second embodiment is different from the first embodiment only in the fixing mode in the first fixing step, this difference will be mainly described below.

(First fixing step)
In the present embodiment, in the first fixing step, the first semiconductor element 81 is fixed to the adherend 50 by flip chip connection (see FIG. 6A). In the flip chip connection, so-called face-down mounting is performed in which the circuit surface of the first semiconductor element 81 faces the adherend 50. The first semiconductor element 81 is provided with a plurality of protruding electrodes 83 such as bumps, and the protruding electrodes 83 are connected to electrodes (not shown) on the adherend 50. An underfill material 84 is filled between the adherend 50 and the first semiconductor element 81 for the purpose of reducing the difference in thermal expansion coefficient between them and protecting the space between them.

  It does not specifically limit as a connection method, It can connect by a conventionally well-known flip chip bonder. For example, the conductive material while pressing the protruding electrodes 83 such as bumps formed on the first semiconductor element 81 in contact with the conductive material for bonding (solder or the like) attached to the connection pad of the adherend 50. Is melted to ensure electrical continuity between the first semiconductor element 81 and the adherend 50, and the first semiconductor element 81 can be fixed to the adherend 50 (flip chip bonding). Generally, the heating condition at the time of flip chip connection is 240 to 300 ° C., and the pressurizing condition is 0.5 to 490 N.

  The material for forming the bump as the protruding electrode 83 is not particularly limited, and examples thereof include a tin-lead metal material, a tin-silver metal material, a tin-silver-copper metal material, and a tin-zinc metal material. And solders (alloys) such as tin-zinc-bismuth metal materials, gold metal materials, copper metal materials, and the like.

  As the underfill material 84, a conventionally known liquid or film-like underfill material can be used.

(Second fixing step)
In the second fixing step, the second semiconductor element 62 different from the first semiconductor element 81 is deposited while the first semiconductor element 81 is embedded by the embedding adhesive film 40 as in the first embodiment. It fixes to the body 50 (refer FIG. 6B). The conditions in this step are the same as those in the second fixing step in the first embodiment. Also in this embodiment, since the embedding adhesive film 40 having a specific melt viscosity is used, the embedding adhesive film 40 on the adherend 50 is prevented while preventing the film from protruding from the second semiconductor element 62. Adhesion can be increased to prevent the generation of voids.

The embedding adhesive film 40 has a thickness T thicker than the thickness T ₁ of the first semiconductor element 81. In this embodiment, since the adherend 50 and the first semiconductor element 81 are flip-chip connected, the difference between the thickness T and the thickness T ₁ is preferably 10 μm or more and 200 μm or less. Although the lower limit of the difference between the the thickness T and the thickness T ₁ is preferably at least 10 [mu] m, more preferably at least 20 [mu] m, and even more preferably 30 [mu] m. Although the upper limit is preferably not more than 200μm of difference between the the thickness T and the thickness _{T 1,} more preferably at most 150 [mu] m, more preferably 100μm or less. With such a configuration, the entire semiconductor device is reduced in thickness, and at the same time, the first semiconductor element 81 is entirely embedded in the embedding adhesive film 40 while preventing contact between the first semiconductor element 81 and the second semiconductor element 62. The first semiconductor element 81 as a controller can be fixed onto the adherend 50 (that is, the fixing at the lowest stage where the communication path length is the shortest).

The thickness T of the embedding adhesive film 40 may be appropriately set in consideration of the height of the thickness T ₁ and the projecting electrodes of the first semiconductor element 81 so as to be embedded first semiconductor element 81 but, The lower limit is preferably 50 μm or more, more preferably 60 μm or more, and even more preferably 70 μm or more. On the other hand, the upper limit of the thickness T is preferably 250 μm or less, more preferably 200 μm or less, and even more preferably 150 μm or less. Thus, by making the adhesive film 40 for embedding relatively thick, the thickness of a general controller can be almost covered, and the embedding of the first semiconductor element 81 in the adhesive film 40 for embedding is easy. Can be done.

  Subsequently, as in the first embodiment, a third fixing step (see FIG. 6C) for fixing a third semiconductor element 73 of the same type or different type from the second semiconductor element 62 on the second semiconductor element 62, and the second semiconductor Through a second wire bonding step (see FIG. 6D) in which the element 62 and the third semiconductor element 73 are electrically connected by the bonding wire 75, the controller is stacked at the lowest level, and a plurality of semiconductor elements are disposed above the controller. A stacked semiconductor device 200 can be manufactured.

(Other embodiments)
In 1st Embodiment, the 2nd semiconductor element 62 is produced through the dicing process and pick-up process using an adhesive film with a dicing film. Furthermore, you may produce the 1st semiconductor element 52 similarly using an adhesive film with a dicing film. In this case, a semiconductor wafer for cutting out the first semiconductor element 52 is separately prepared, and then the first semiconductor element 52 may be fixed to the adherend 50 through the wafer bonding process, the dicing process, and the pickup process. . The third semiconductor element 73 and the semiconductor element stacked on the upper stage can be similarly manufactured.

  When the semiconductor element is three-dimensionally mounted on the adherend, a buffer coat film may be formed on the surface side where the circuit of the semiconductor element is formed. Examples of the buffer coat film include those made of a heat resistant resin such as a silicon nitride film or a polyimide resin.

  In each embodiment, although the aspect which performs a wire bonding process whenever it laminates | stacks the semiconductor element after a 2nd semiconductor element was demonstrated, after laminating | stacking several semiconductor elements, a wire bonding process may be performed collectively. Is possible. In addition, since it embeds with the adhesive film for embedding about the 1st semiconductor element, it cannot be made into the object of collective wire bonding.

  The aspect of flip chip connection is not limited to the connection by the bump as the protruding electrode described in the second embodiment, but the connection by the conductive adhesive composition or the protrusion combining the bump and the conductive adhesive composition. Connection by structure can also be employed. In the present invention, as long as face-down mounting in which the circuit surface of the first semiconductor element is connected facing the adherend is referred to as flip-chip connection regardless of the connection mode such as the protruding electrode and the protruding structure. I will do it. As the conductive adhesive composition, a conventionally known conductive paste obtained by mixing a thermosetting resin such as an epoxy resin with a conductive filler such as gold, silver, or copper can be used. When the conductive adhesive composition is used, after mounting the first semiconductor element on the adherend, the first semiconductor element can be fixed by thermosetting at 80 to 150 ° C. for about 0.5 to 10 hours. it can.

In the embodiment described above, the adhesive film of the present invention embeds the first semiconductor element fixed on the adherend and fixes the second semiconductor element different from the first semiconductor element to the adherend. The case where it was the adhesive film for embedding | flushing (adhesive film 40 shown to FIG. 4F) was demonstrated. However, the adhesive film of the present invention is not limited to this example, and may be a die bond film (for example, the first adhesive film 54 shown in FIG. 5A) for fixing the semiconductor element to the adherend.
Moreover, the adhesive film of this invention can also be used as a film for flip chip type semiconductor back surfaces. The flip chip type semiconductor back film is used for forming on the back surface of a semiconductor element (for example, a semiconductor chip) flip-chip connected to an adherend (for example, various substrates such as a lead frame and a circuit board). Is.
The adhesive film of the present invention may be a sealing film for sealing a semiconductor element.

  Hereinafter, preferred embodiments of the present invention will be described in detail by way of example. However, the materials, blending amounts, and the like described in the examples are not intended to limit the scope of the present invention only to those examples, but are merely illustrative examples, unless otherwise limited.

[Examples and Comparative Examples]
(Preparation of adhesive film)
Acrylic resin A, epoxy resins A and B, phenol resin, silica, and thermosetting catalyst were dissolved in methyl ethyl ketone at a ratio shown in Table 1 to prepare an adhesive composition solution having a concentration of 40 to 50% by weight.

The adhesive composition solution was applied as a release liner on a release treatment film made of a polyethylene terephthalate film having a thickness of 50 μm after silicone release treatment, and then dried at 130 ° C. for 2 minutes to obtain a thickness of 30 to 30 μm. An adhesive film having a thickness as shown in Table 1 was prepared by preparing a 45 μm film and bonding a plurality of the films together. Specifically, an adhesive film having a thickness of 120 μm was prepared by bonding three films having a thickness of 40 μm. The 80 μm thick adhesive film was prepared by bonding two 40 μm thick films. The adhesive film having a thickness of 150 μm was prepared by bonding three films having a thickness of 40 μm and one film having a thickness of 30 μm. The adhesive film having a thickness of 135 μm was prepared by bonding three films having a thickness of 45 μm.
Laminator device: Roll laminator Laminating speed: 10mm / min
Lamination pressure: 0.15 MPa
Laminator temperature: 60 ° C

The details of the abbreviations and components in Table 1 below are as follows.
Acrylic resin A: SG-70L manufactured by Nagase ChemteX Corporation
Epoxy resin A: KI-3000 manufactured by Tohto Kasei Co., Ltd.
Epoxy resin B: JER YL980 manufactured by Mitsubishi Chemical Corporation
Phenolic resin: MEH-7800H manufactured by Meiwa Kasei Co., Ltd.
Silica: SE-2050MC manufactured by Admatechs Co., Ltd.
Thermosetting catalyst: TPP-K manufactured by Hokuko Chemical Co., Ltd.

(Elastic modulus at 25 ° C. before thermosetting of the adhesive film)
About each adhesive film before thermosetting, the storage elastic modulus in 25 degreeC was measured using the viscoelasticity measuring apparatus (Rheometrics company_made: type | formula: RSA-II). More specifically, the adhesive film is cut so that the sample size is 30 mm long × 10 mm wide, the measurement sample is set in a film tension measuring jig, and the frequency is 1.0 Hz in the temperature range of −30 to 100 ° C., and the strain is 0. Measured under the conditions of 0.025% and a heating rate of 10 ° C./min, and obtained by reading the measured value at 25 ° C. The results are shown in Table 1.

(Production of dicing film)
As a substrate, a polyethylene terephthalate film (PET film) having a thickness of 50 μm was prepared.

  In a reaction vessel equipped with a cooling tube, a nitrogen introduction tube, a thermometer, and a stirring device, 86.4 parts of acrylate-2-ethylhexyl acrylate (hereinafter also referred to as “2EHA”), -2-hydroxyethyl acrylate (hereinafter referred to as “2EHA”) 13.6 parts, 0.2 parts of benzoyl peroxide, and 65 parts of toluene were added and polymerized in a nitrogen stream at 61 ° C. for 6 hours to obtain an acrylic polymer A. .

  14.6 parts of 2-methacryloyloxyethyl isocyanate (hereinafter also referred to as “MOI”) is added to the acrylic polymer A, followed by an addition reaction treatment at 50 ° C. for 48 hours in an air stream, and the acrylic polymer A ′. Got.

  Next, with respect to 100 parts of acrylic polymer A ′, 8 parts of a polyisocyanate compound (trade name “Coronate L”, manufactured by Nippon Polyurethane Co., Ltd.) and a photopolymerization initiator (trade name “Irgacure 651”, Ciba Specialty) (Chemicals company make) 5 parts was added, and the adhesive composition solution was obtained.

  The dicing film was obtained by apply | coating and drying the obtained adhesive composition solution on the prepared said base material, and forming a 30-micrometer-thick adhesive layer.

(Production of adhesive film with dicing film)
Next, the adhesive film was cut into a circular shape having a diameter of 330 mm, and the pressure-sensitive adhesive layer of the dicing film and the adhesive film cut into a circular shape were bonded together. The number of bonded sheets was as shown in Table 1. The bonding conditions (lamination conditions 1) are as follows.
<Lamination condition 1>
Laminator device: Roll laminator Laminating speed: 10mm / sec
Lamination pressure: 0.15 MPa
Laminator temperature: 35 ° C

  Next, the release treatment film on the adhesive film was peeled off, and a separator was bonded. As the separator, a polyethylene terephthalate film (thickness 50 μm) subjected to silicone release treatment was used. At this time, in order to prevent misalignment, voids (bubbles), etc., a linear pressure of 2 kgf is applied to the separator without applying a lamination temperature while applying a tensile tension of 17 N in the MD direction using a dancer roll. Bonding was performed at / cm.

<Preparation of film for semiconductor device>
Further, a semiconductor device in which a dicing film having a diameter of 370 mm is punched out in a circular shape so that the adhesive film is at the center so that the number of adhesive films with a dicing sheet shown in Table 1 are pasted on the separator with an interval of 10 mm. A film was obtained.

<Creation of film roll for semiconductor device>
The produced film for a semiconductor device was wound around a core having a diameter of 8.9 cm. The winding tension applied to the film for a semiconductor device at this time was 15 N / m. Moreover, the diameter of the film roll after winding is as shown in Table 1. This obtained the film roll for semiconductor devices.

(Evaluation of presence of bubbles after wafer lamination)
The adhesive film with a dicing film was peeled off from the film rolls for semiconductor devices of Examples and Comparative Examples. Specifically, the fifth adhesive film with a dicing film was peeled off from the start of winding. Next, the peeled adhesive film with a dicing film was bonded to the surface opposite to the circuit surface of the single-sided bumped silicon wafer as the bonding surface. As a silicon wafer with a single-sided bump, the following was used. The bonding conditions are as follows.

<Silicon wafer with single-sided bump>
Silicon wafer thickness: 100 μm
Low dielectric material layer material: SiN film Low dielectric material layer thickness: 0.3 μm
Bump height: 60μm
Bump pitch: 150 μm
Bump material: Solder

<Bonding conditions>
Bonding device: DR-3000III (manufactured by Nitto Seiki Co., Ltd.)
Laminating speed: 10 mm / s
Lamination pressure: 0.15 MPa
Laminator temperature: 60 ° C

  The presence or absence of bubbles after wafer lamination was evaluated. Specifically, the sample after the wafer lamination was visually observed from the dicing tape side, and evaluation was made as x when the bubbles remained and O when there were no bubbles. The results are shown in Table 1.

(Evaluation of unevenness)
The unevenness of the traces on the adhesive film surface was measured. Specifically, first, the adhesive film with a dicing film was peeled off from the film rolls for semiconductor devices of Examples and Comparative Examples. The fifth adhesive film with a dicing film was peeled off from the start of winding. Next, unevenness on the surface of the adhesive film was measured using a surface roughness meter (DEKTAK8, manufactured by Veeco), and the maximum value when both ends were corrected to equilibrium (set to 0) was read. (Measuring speed: 1.5 mm / S, weight: 1 mg) A case where the unevenness is smaller than 15 μm is indicated by ◯, and a case where the unevenness is 15 μm or more is indicated by ×.

DESCRIPTION OF SYMBOLS 10 Film roll for semiconductor devices 12 Core 20 Film for semiconductor devices 22 Separator 30 Adhesive film with dicing film 32 Dicing film 33 Base material 34 Adhesive layer 40 Adhesive film 50 Adhering body 60 Semiconductor wafer 52 First semiconductor element 62 2nd Semiconductor element 73 Third semiconductor element 100, 200 Semiconductor device T Thickness of adhesive film T ₁ Thickness of first semiconductor element

Claims (8)

A film roll for a semiconductor device in which a film for a semiconductor device is wound into a roll around a cylindrical core,
The film for a semiconductor device has a configuration in which an adhesive film with a dicing film in which a dicing film and an adhesive film are laminated is laminated on a separator at a predetermined interval,
The adhesive film is for embedding the first semiconductor element fixed on the adherend and fixing the second semiconductor element different from the first semiconductor element to the adherend,
The adhesive film has a thickness of 80 to 150 μm,
A film roll for a semiconductor device, wherein the number of adhesive films with dicing film laminated on the separator is 150 or less.   The film roll for a semiconductor device according to claim 1, wherein the diameter is 250 mm or less.   The thickness of the said separator is 10-60 micrometers, The film roll for semiconductor devices of Claim 1 or 2 characterized by the above-mentioned.   4. The film roll for a semiconductor device according to claim 1, wherein the adhesive film has a storage elastic modulus at 25 ° C. before thermosetting of 10 MPa or more and 10000 MPa or less. 5.   5. The film roll for a semiconductor device according to claim 1, wherein the adhesive film contains an inorganic filler, and the content of the inorganic filler is 10 to 80 wt%. An adherend preparation step for preparing an adherend to which the first semiconductor element is fixed;
The peeling process which peels an adhesive film with a dicing film from the film roll for semiconductor devices of any one of Claims 1-5,
A bonding step of bonding the peeled adhesive film with the dicing film and the semiconductor wafer;
A dicing step of dicing the semiconductor wafer and the adhesive film to form a second semiconductor element;
A pickup step of picking up the second semiconductor element together with the adhesive film; and
A fixing step of fixing the second semiconductor element to the adherend while embedding the first semiconductor element fixed to the adherend by an adhesive film picked up together with the second semiconductor element; A method for manufacturing a semiconductor device. The adhesive film has a thickness T that is greater than the thickness T ₁ of the first semiconductor element;
The method for manufacturing a semiconductor device according to claim 6, wherein the adherend and the first semiconductor element are connected by wire bonding, and a difference between the thickness T and the thickness T ₁ is 40 μm or more and 260 μm or less. The adhesive film has a thickness T that is greater than the thickness T ₁ of the first semiconductor element;
The method for manufacturing a semiconductor device according to claim 6, wherein the adherend and the first semiconductor element are flip-chip connected, and a difference between the thickness T and the thickness T ₁ is 10 μm or more and 200 μm or less.

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