TWI608062B - Resin composition, semiconductor device using said resin composition, and method of producing semiconductor device - Google Patents
Resin composition, semiconductor device using said resin composition, and method of producing semiconductor device Download PDFInfo
- Publication number
- TWI608062B TWI608062B TW101118812A TW101118812A TWI608062B TW I608062 B TWI608062 B TW I608062B TW 101118812 A TW101118812 A TW 101118812A TW 101118812 A TW101118812 A TW 101118812A TW I608062 B TWI608062 B TW I608062B
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- TW
- Taiwan
- Prior art keywords
- resin composition
- resin
- substrate
- less
- semiconductor element
- Prior art date
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- 239000011342 resin composition Substances 0.000 title claims description 111
- 239000004065 semiconductor Substances 0.000 title claims description 71
- 238000000034 method Methods 0.000 title description 7
- 229920005989 resin Polymers 0.000 claims description 79
- 239000011347 resin Substances 0.000 claims description 79
- 239000002245 particle Substances 0.000 claims description 67
- -1 imidazole compound Chemical class 0.000 claims description 63
- 239000002923 metal particle Substances 0.000 claims description 49
- 239000000758 substrate Substances 0.000 claims description 42
- 229920001187 thermosetting polymer Polymers 0.000 claims description 34
- 239000012790 adhesive layer Substances 0.000 claims description 29
- 239000003822 epoxy resin Substances 0.000 claims description 24
- 229920000647 polyepoxide Polymers 0.000 claims description 24
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 21
- 229910052709 silver Inorganic materials 0.000 claims description 15
- 239000004332 silver Substances 0.000 claims description 15
- 239000011203 carbon fibre reinforced carbon Substances 0.000 claims description 11
- 238000009826 distribution Methods 0.000 claims description 10
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 6
- 238000012546 transfer Methods 0.000 claims description 6
- 238000000354 decomposition reaction Methods 0.000 claims description 4
- 239000007870 radical polymerization initiator Substances 0.000 claims description 4
- 238000012360 testing method Methods 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 229920000620 organic polymer Polymers 0.000 claims description 3
- 239000003505 polymerization initiator Substances 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 238000002788 crimping Methods 0.000 claims description 2
- 238000002844 melting Methods 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims description 2
- 238000010191 image analysis Methods 0.000 claims 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 65
- 150000001875 compounds Chemical class 0.000 description 37
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 17
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate Chemical compound [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 description 13
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 13
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Natural products OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 12
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 12
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 11
- 229920005862 polyol Polymers 0.000 description 11
- PEEHTFAAVSWFBL-UHFFFAOYSA-N Maleimide Chemical compound O=C1NC(=O)C=C1 PEEHTFAAVSWFBL-UHFFFAOYSA-N 0.000 description 10
- 125000003118 aryl group Chemical group 0.000 description 10
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 9
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 9
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 9
- 150000003077 polyols Chemical class 0.000 description 9
- 239000007822 coupling agent Substances 0.000 description 8
- KPSSIOMAKSHJJG-UHFFFAOYSA-N neopentyl alcohol Chemical compound CC(C)(C)CO KPSSIOMAKSHJJG-UHFFFAOYSA-N 0.000 description 8
- 239000000047 product Substances 0.000 description 8
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 7
- 239000004721 Polyphenylene oxide Substances 0.000 description 7
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 7
- 239000004417 polycarbonate Substances 0.000 description 7
- 229920000515 polycarbonate Polymers 0.000 description 7
- 229920000570 polyether Polymers 0.000 description 7
- 239000004848 polyfunctional curative Substances 0.000 description 7
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 6
- 239000005062 Polybutadiene Substances 0.000 description 6
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 6
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 6
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 6
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 229920001577 copolymer Polymers 0.000 description 6
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 6
- 229920002857 polybutadiene Polymers 0.000 description 6
- 239000004925 Acrylic resin Substances 0.000 description 5
- 229920000178 Acrylic resin Polymers 0.000 description 5
- 239000004593 Epoxy Substances 0.000 description 5
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 5
- 239000002253 acid Substances 0.000 description 5
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 5
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 5
- RWGFKTVRMDUZSP-UHFFFAOYSA-N cumene Chemical compound CC(C)C1=CC=CC=C1 RWGFKTVRMDUZSP-UHFFFAOYSA-N 0.000 description 5
- 150000002009 diols Chemical class 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 230000005484 gravity Effects 0.000 description 5
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 5
- CXMXRPHRNRROMY-UHFFFAOYSA-N n-Decanedioic acid Natural products OC(=O)CCCCCCCCC(O)=O CXMXRPHRNRROMY-UHFFFAOYSA-N 0.000 description 5
- 239000005011 phenolic resin Substances 0.000 description 5
- 150000003254 radicals Chemical class 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 5
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 4
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 4
- AFFLGGQVNFXPEV-UHFFFAOYSA-N 1-decene Chemical compound CCCCCCCCC=C AFFLGGQVNFXPEV-UHFFFAOYSA-N 0.000 description 4
- 229930185605 Bisphenol Natural products 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 4
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 4
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N Valeric acid Natural products CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000011256 inorganic filler Substances 0.000 description 4
- 229910003475 inorganic filler Inorganic materials 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- UAEPNZWRGJTJPN-UHFFFAOYSA-N methylcyclohexane Chemical compound CC1CCCCC1 UAEPNZWRGJTJPN-UHFFFAOYSA-N 0.000 description 4
- 239000012766 organic filler Substances 0.000 description 4
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 4
- WLJVNTCWHIRURA-UHFFFAOYSA-N pimelic acid Chemical compound OC(=O)CCCCCC(O)=O WLJVNTCWHIRURA-UHFFFAOYSA-N 0.000 description 4
- 229920003192 poly(bis maleimide) Polymers 0.000 description 4
- 229920000728 polyester Polymers 0.000 description 4
- 229920000193 polymethacrylate Polymers 0.000 description 4
- 150000003839 salts Chemical class 0.000 description 4
- 238000004062 sedimentation Methods 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- TYFQFVWCELRYAO-UHFFFAOYSA-N suberic acid Chemical compound OC(=O)CCCCCCC(O)=O TYFQFVWCELRYAO-UHFFFAOYSA-N 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- CRSBERNSMYQZNG-UHFFFAOYSA-N 1 -dodecene Natural products CCCCCCCCCCC=C CRSBERNSMYQZNG-UHFFFAOYSA-N 0.000 description 3
- ZFFMLCVRJBZUDZ-UHFFFAOYSA-N 2,3-dimethylbutane Chemical group CC(C)C(C)C ZFFMLCVRJBZUDZ-UHFFFAOYSA-N 0.000 description 3
- OISVCGZHLKNMSJ-UHFFFAOYSA-N 2,6-dimethylpyridine Chemical compound CC1=CC=CC(C)=N1 OISVCGZHLKNMSJ-UHFFFAOYSA-N 0.000 description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- QPRQEDXDYOZYLA-UHFFFAOYSA-N 2-methylbutan-1-ol Chemical compound CCC(C)CO QPRQEDXDYOZYLA-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 3
- 229920000459 Nitrile rubber Polymers 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 150000001413 amino acids Chemical class 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- JFDZBHWFFUWGJE-UHFFFAOYSA-N benzonitrile Chemical compound N#CC1=CC=CC=C1 JFDZBHWFFUWGJE-UHFFFAOYSA-N 0.000 description 3
- GWYFCOCPABKNJV-UHFFFAOYSA-N beta-methyl-butyric acid Natural products CC(C)CC(O)=O GWYFCOCPABKNJV-UHFFFAOYSA-N 0.000 description 3
- NTXGQCSETZTARF-UHFFFAOYSA-N buta-1,3-diene;prop-2-enenitrile Chemical compound C=CC=C.C=CC#N NTXGQCSETZTARF-UHFFFAOYSA-N 0.000 description 3
- BTANRVKWQNVYAZ-UHFFFAOYSA-N butan-2-ol Chemical compound CCC(C)O BTANRVKWQNVYAZ-UHFFFAOYSA-N 0.000 description 3
- XUPYJHCZDLZNFP-UHFFFAOYSA-N butyl ester butanoic acid Natural products CCCCOC(=O)CCC XUPYJHCZDLZNFP-UHFFFAOYSA-N 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- IFDVQVHZEKPUSC-UHFFFAOYSA-N cyclohex-3-ene-1,2-dicarboxylic acid Chemical compound OC(=O)C1CCC=CC1C(O)=O IFDVQVHZEKPUSC-UHFFFAOYSA-N 0.000 description 3
- QSAWQNUELGIYBC-UHFFFAOYSA-N cyclohexane-1,2-dicarboxylic acid Chemical compound OC(=O)C1CCCCC1C(O)=O QSAWQNUELGIYBC-UHFFFAOYSA-N 0.000 description 3
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 3
- UAOMVDZJSHZZME-UHFFFAOYSA-N diisopropylamine Chemical compound CC(C)NC(C)C UAOMVDZJSHZZME-UHFFFAOYSA-N 0.000 description 3
- 229930004069 diterpene Natural products 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000004898 kneading Methods 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 3
- 239000011976 maleic acid Substances 0.000 description 3
- 125000005439 maleimidyl group Chemical group C1(C=CC(N1*)=O)=O 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 125000000962 organic group Chemical group 0.000 description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 3
- 229920005906 polyester polyol Polymers 0.000 description 3
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 3
- 239000001294 propane Substances 0.000 description 3
- 235000013772 propylene glycol Nutrition 0.000 description 3
- UFDHBDMSHIXOKF-UHFFFAOYSA-N tetrahydrophthalic acid Natural products OC(=O)C1=C(C(O)=O)CCCC1 UFDHBDMSHIXOKF-UHFFFAOYSA-N 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- GRWFGVWFFZKLTI-IUCAKERBSA-N (-)-α-pinene Chemical compound CC1=CC[C@@H]2C(C)(C)[C@H]1C2 GRWFGVWFFZKLTI-IUCAKERBSA-N 0.000 description 2
- RUEBPOOTFCZRBC-UHFFFAOYSA-N (5-methyl-2-phenyl-1h-imidazol-4-yl)methanol Chemical compound OCC1=C(C)NC(C=2C=CC=CC=2)=N1 RUEBPOOTFCZRBC-UHFFFAOYSA-N 0.000 description 2
- MYRTYDVEIRVNKP-UHFFFAOYSA-N 1,2-Divinylbenzene Chemical compound C=CC1=CC=CC=C1C=C MYRTYDVEIRVNKP-UHFFFAOYSA-N 0.000 description 2
- KVNYFPKFSJIPBJ-UHFFFAOYSA-N 1,2-diethylbenzene Chemical compound CCC1=CC=CC=C1CC KVNYFPKFSJIPBJ-UHFFFAOYSA-N 0.000 description 2
- AUHZEENZYGFFBQ-UHFFFAOYSA-N 1,3,5-trimethylbenzene Chemical compound CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 2
- ZGEGCLOFRBLKSE-UHFFFAOYSA-N 1-Heptene Chemical compound CCCCCC=C ZGEGCLOFRBLKSE-UHFFFAOYSA-N 0.000 description 2
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical group CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 description 2
- BBMCTIGTTCKYKF-UHFFFAOYSA-N 1-heptanol Chemical group CCCCCCCO BBMCTIGTTCKYKF-UHFFFAOYSA-N 0.000 description 2
- LIKMAJRDDDTEIG-UHFFFAOYSA-N 1-hexene Chemical compound CCCCC=C LIKMAJRDDDTEIG-UHFFFAOYSA-N 0.000 description 2
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 2
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 description 2
- KWKAKUADMBZCLK-UHFFFAOYSA-N 1-octene Chemical compound CCCCCCC=C KWKAKUADMBZCLK-UHFFFAOYSA-N 0.000 description 2
- HNRMPXKDFBEGFZ-UHFFFAOYSA-N 2,2-dimethylbutane Chemical compound CCC(C)(C)C HNRMPXKDFBEGFZ-UHFFFAOYSA-N 0.000 description 2
- JYYNAJVZFGKDEQ-UHFFFAOYSA-N 2,4-Dimethylpyridine Chemical compound CC1=CC=NC(C)=C1 JYYNAJVZFGKDEQ-UHFFFAOYSA-N 0.000 description 2
- XMNIXWIUMCBBBL-UHFFFAOYSA-N 2-(2-phenylpropan-2-ylperoxy)propan-2-ylbenzene Chemical group C=1C=CC=CC=1C(C)(C)OOC(C)(C)C1=CC=CC=C1 XMNIXWIUMCBBBL-UHFFFAOYSA-N 0.000 description 2
- VQKFNUFAXTZWDK-UHFFFAOYSA-N 2-Methylfuran Chemical compound CC1=CC=CO1 VQKFNUFAXTZWDK-UHFFFAOYSA-N 0.000 description 2
- AFABGHUZZDYHJO-UHFFFAOYSA-N 2-Methylpentane Chemical compound CCCC(C)C AFABGHUZZDYHJO-UHFFFAOYSA-N 0.000 description 2
- RXGUIWHIADMCFC-UHFFFAOYSA-N 2-Methylpropyl 2-methylpropionate Chemical group CC(C)COC(=O)C(C)C RXGUIWHIADMCFC-UHFFFAOYSA-N 0.000 description 2
- QQZOPKMRPOGIEB-UHFFFAOYSA-N 2-Oxohexane Chemical compound CCCCC(C)=O QQZOPKMRPOGIEB-UHFFFAOYSA-N 0.000 description 2
- CETWDUZRCINIHU-UHFFFAOYSA-N 2-heptanol Chemical group CCCCCC(C)O CETWDUZRCINIHU-UHFFFAOYSA-N 0.000 description 2
- XLLIQLLCWZCATF-UHFFFAOYSA-N 2-methoxyethyl acetate Chemical compound COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 2
- PFNHSEQQEPMLNI-UHFFFAOYSA-N 2-methyl-1-pentanol Chemical group CCCC(C)CO PFNHSEQQEPMLNI-UHFFFAOYSA-N 0.000 description 2
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 2
- SVTBMSDMJJWYQN-UHFFFAOYSA-N 2-methylpentane-2,4-diol Chemical compound CC(O)CC(C)(C)O SVTBMSDMJJWYQN-UHFFFAOYSA-N 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
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- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- GRWFGVWFFZKLTI-UHFFFAOYSA-N rac-alpha-Pinene Natural products CC1=CCC2C(C)(C)C1C2 GRWFGVWFFZKLTI-UHFFFAOYSA-N 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- WSFQLUVWDKCYSW-UHFFFAOYSA-M sodium;2-hydroxy-3-morpholin-4-ylpropane-1-sulfonate Chemical compound [Na+].[O-]S(=O)(=O)CC(O)CN1CCOCC1 WSFQLUVWDKCYSW-UHFFFAOYSA-M 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 150000003440 styrenes Chemical class 0.000 description 1
- 229940014800 succinic anhydride Drugs 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- CIHOLLKRGTVIJN-UHFFFAOYSA-N tert‐butyl hydroperoxide Chemical compound CC(C)(C)OO CIHOLLKRGTVIJN-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- BSYVTEYKTMYBMK-UHFFFAOYSA-N tetrahydrofurfuryl alcohol Chemical compound OCC1CCCO1 BSYVTEYKTMYBMK-UHFFFAOYSA-N 0.000 description 1
- USFPINLPPFWTJW-UHFFFAOYSA-N tetraphenylphosphonium Chemical compound C1=CC=CC=C1[P+](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 USFPINLPPFWTJW-UHFFFAOYSA-N 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Chemical group OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- 238000005809 transesterification reaction Methods 0.000 description 1
- 125000002889 tridecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000005829 trimerization reaction Methods 0.000 description 1
- 229940005605 valeric acid Drugs 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 239000011592 zinc chloride Substances 0.000 description 1
- 235000005074 zinc chloride Nutrition 0.000 description 1
- CHJMFFKHPHCQIJ-UHFFFAOYSA-L zinc;octanoate Chemical compound [Zn+2].CCCCCCCC([O-])=O.CCCCCCCC([O-])=O CHJMFFKHPHCQIJ-UHFFFAOYSA-L 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
- C09J9/02—Electrically-conducting adhesives
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/04—Non-macromolecular additives inorganic
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/10—Metal compounds
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
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- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J201/00—Adhesives based on unspecified macromolecular compounds
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49503—Lead-frames or other flat leads characterised by the die pad
- H01L23/49513—Lead-frames or other flat leads characterised by the die pad having bonding material between chip and die pad
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0236—Fixing laser chips on mounts using an adhesive
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/08—Metals
- C08K2003/0806—Silver
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- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/001—Conductive additives
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- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/002—Physical properties
- C08K2201/005—Additives being defined by their particle size in general
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- C—CHEMISTRY; METALLURGY
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- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K7/00—Use of ingredients characterised by shape
- C08K7/16—Solid spheres
- C08K7/18—Solid spheres inorganic
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
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Description
本發明係關於一種樹脂組成物、使用它的半導體裝置與半導體裝置之製造方法。 The present invention relates to a resin composition, a semiconductor device using the same, and a method of manufacturing a semiconductor device.
本申請案基於2011年5月31日於日本提出申請之日本特願2011-121386號而主張優先權,其內容援用於此。 The present application claims priority based on Japanese Patent Application No. 2011-121386, filed on Jan. 31,,,,,,,,
半導體裝置中,半導體元件係夾著黏著層被固定在導線架、散熱片、或基板等基材上。此種黏著層除了黏著性以外,還要求導電性與導熱性,已知能藉由包含金屬粒子的糊狀樹脂組成物形成。例如,專利文獻1、2中,記載著以含有銀粒子之糊狀樹脂組成物形成上述黏著層。 In a semiconductor device, a semiconductor element is fixed to a substrate such as a lead frame, a heat sink, or a substrate with an adhesive layer interposed therebetween. Such an adhesive layer is required to have conductivity and thermal conductivity in addition to adhesion, and is known to be formed by a paste-like resin composition containing metal particles. For example, in Patent Documents 1 and 2, it is described that the adhesive layer is formed of a paste-like resin composition containing silver particles.
專利文獻1 日本特開平5-89721號公報 Patent Document 1 Japanese Patent Laid-Open No. Hei 5-89721
專利文獻2 日本特開平7-118616號公報 Patent Document 2 Japanese Patent Laid-Open No. 7-118616
為了得到所期望的導電性與導熱性,此種樹脂組成物含有大量的金屬粒子。若含有大量的金屬粒子則會造成樹脂組成物的黏度增加,而使得塗布變困難,故有必要降低使用之樹脂的黏度。 In order to obtain desired conductivity and thermal conductivity, such a resin composition contains a large amount of metal particles. If a large amount of metal particles are contained, the viscosity of the resin composition is increased, and coating becomes difficult, so it is necessary to lower the viscosity of the resin to be used.
然而,由於金屬粒子的比重比樹脂成分大,若樹脂的黏度降低則會造成在使用中或放置中的金屬粒子的沉降速度變快。因此,含大量金屬粒子的樹脂組成物係不安定、黏度隨時間的變化大而難以使用。 However, since the specific gravity of the metal particles is larger than that of the resin component, if the viscosity of the resin is lowered, the sedimentation speed of the metal particles during use or during placement becomes faster. Therefore, the resin composition containing a large amount of metal particles is unstable, and the viscosity changes greatly with time and is difficult to use.
另一方面,在將發光二極體元件或半導體雷射元件等晶片寬度小的半導體元件黏著於基材上時,有必要厚度精確地將少量樹脂組成物塗布在基材上,故藉由壓印或用極細針管點著(dispense)等來塗布樹脂組成物。 On the other hand, when a semiconductor element having a small wafer width such as a light-emitting diode element or a semiconductor laser element is adhered to a substrate, it is necessary to apply a small amount of the resin composition on the substrate with a precise thickness, so that the pressure is applied. The resin composition is applied by printing or dispensing with a very thin needle tube.
因上述樹脂組成物若在玻璃板等之上伸展成薄狀再放置則黏度變化大,故會有無法順利壓印的情形。另外,上述樹脂組成物在極細針管內黏度增加造成針管內堵塞,會有無法順利吐出的情形。因此,含有大量金屬粒子的樹脂組成物特別不適合用於將晶片寬度小的半導體元件黏著在基材上。 When the resin composition is stretched over a glass plate or the like and then placed in a thin shape, the viscosity changes greatly, and thus the stamping may not be smoothly performed. Further, in the above-mentioned resin composition, the viscosity in the extremely thin needle tube is increased to cause clogging in the needle tube, and there is a possibility that the resin composition cannot be discharged smoothly. Therefore, a resin composition containing a large amount of metal particles is particularly unsuitable for adhering a semiconductor element having a small wafer width to a substrate.
另一方面,專利文獻2中記載,藉由在將銀粒子分散於熱硬化性樹脂中的樹脂組成物,含有平均粒徑0.1~1.0μm的球狀二氧化矽,能抑制銀粒子的沉降。但是,因球狀二氧化矽為絕緣性,而會有若在黏著層含有它即會造成導電性惡化之情形。另外,在同一文獻中記載著若縮小銀粒子的粒徑,雖會有一定程度的金屬粒子之沉降抑制效果,但會造成糊變成高黏度而使塗布作業性惡化。 On the other hand, in the resin composition in which silver particles are dispersed in the thermosetting resin, spherical cerium oxide having an average particle diameter of 0.1 to 1.0 μm is contained, and sedimentation of the silver particles can be suppressed. However, since the spherical cerium oxide is insulative, there is a case where the conductivity is deteriorated if it is contained in the adhesive layer. In addition, in the same document, it is described that the particle size of the silver particles is reduced, and the sedimentation suppressing effect of the metal particles is suppressed to some extent. However, the paste becomes highly viscous and the coating workability is deteriorated.
本發明係鑑於上述課題而進行,因此其目的係提供一種作業性優良的樹脂組成物。 The present invention has been made in view of the above problems, and an object thereof is to provide a resin composition excellent in workability.
本案發明者人在專心研究樹脂組成物之黏度隨時間變化之機制時,發現粒徑超過10μm的金屬粒子為原因,而完成本發明。 When the inventors of the present invention concentrated on the mechanism of the viscosity change of the resin composition with time, it was found that the metal particles having a particle diameter exceeding 10 μm were the cause, and the present invention was completed.
亦即,若依據本發明,則可提供一種樹脂組成物,其係用於黏著半導體元件與基材之糊狀樹脂組成物,其包含:熱硬化性樹脂;及 金屬粒子;其中,前述金屬粒子之以流場式顆粒影像分析儀(flow particle image analyzer)測定出的體積基準粒度分布之d95係10μm以下。 That is, according to the present invention, a resin composition for adhering a paste-like resin composition of a semiconductor element and a substrate, comprising: a thermosetting resin; and metal particles; wherein the metal particles are provided The volume-based particle size distribution measured by a flow particle image analyzer is d 95 based on 10 μm or less.
使得樹脂組成物所含的金屬粒子之d95在10μm以下,換言之,藉由使得粒徑超過10μm的金屬粒子的體積比例小於5%,會造成金屬粒子難以發生沉降。因此,使得本發明之樹脂組成物之黏度隨時間的變化小,使作業性優良。 The d 95 of the metal particles contained in the resin composition is 10 μm or less. In other words, by making the volume ratio of the metal particles having a particle diameter of more than 10 μm less than 5%, it is difficult for the metal particles to settle. Therefore, the viscosity of the resin composition of the present invention changes little with time, and the workability is excellent.
此外,若依據本發明,則可提供一種半導體裝置,其係具備:前述基材;前述半導體元件;及夾在前述基材與前述半導體元件之間,用以黏著兩者的黏著層,其中前述黏著層使用上述樹脂組成物所形成。 Further, according to the present invention, there is provided a semiconductor device comprising: the substrate; the semiconductor element; and an adhesive layer interposed between the substrate and the semiconductor element for adhering the both, wherein the The adhesive layer is formed using the above resin composition.
此外,若依據本發明,則可提供一種半導體裝置之製造方法,其係上述之半導體裝置之製造方法,其包括:將前述樹脂組成物塗布於前述半導體元件或前述基材中至少一者的黏著面之步驟;及壓接前述半導體元件與前述基材,再加熱硬化而形成前述黏著層之步驟。 Further, according to the present invention, there is provided a method of manufacturing a semiconductor device, comprising: applying the resin composition to at least one of the semiconductor element or the substrate; And a step of forming the adhesive layer by pressure-bonding the semiconductor element and the substrate, and then heating and hardening.
依據本發明,能提供作業性優良之樹脂組成物。 According to the present invention, it is possible to provide a resin composition excellent in workability.
以下,說明本發明之實施形態。 Hereinafter, embodiments of the present invention will be described.
(樹脂組成物) (resin composition)
本實施形態之糊狀樹脂組成物係用於黏著半導體元件與基材,係含有(A)熱硬化性樹脂與(B)金屬粒子。而且(B)金屬粒子之以流場式顆粒影像分析儀測出的體積基準粒度分布之d95為10μm以下。換言之,粒徑超過10μm的金屬粒子之體積比例係小於5%。 The paste-like resin composition of the present embodiment is used for adhering a semiconductor element and a substrate, and contains (A) a thermosetting resin and (B) a metal particle. Further, (b) the volume-based particle size distribution of the metal particles measured by the flow field type particle image analyzer has a d 95 of 10 μm or less. In other words, the volume ratio of the metal particles having a particle diameter of more than 10 μm is less than 5%.
此處,d95係表示累積體積比例達95%之粒徑。 Here, d 95 represents a particle diameter in which the cumulative volume ratio is 95%.
樹脂組成物所包含之(B)金屬粒子的d95若為10μm以下,則(B)金屬粒子在樹脂組成物中的分散性良好,而不易發生沉降。因此,本實施形態之樹脂組成物係黏度變化小且作業性優良。 When the d 95 of the metal particles (B) contained in the resin composition is 10 μm or less, the dispersibility of the (B) metal particles in the resin composition is good, and sedimentation is less likely to occur. Therefore, the resin composition of the present embodiment has a small change in viscosity and is excellent in workability.
又,在將發光二極體元件或半導體雷射元件等晶片寬度小的半導體元件黏著於基材上時,有必要藉由壓印或使用極細針管之點著等,將少量樹脂組成物厚度精確地塗布在基材上。對於壓印使用之樹脂組成物,要求黏度在玻璃板等之上變化小,對於用極細針管之點著所使用的樹脂組成物,要求在針管不會發生樹脂組成物的堵塞。 Further, when a semiconductor element having a small wafer width such as a light-emitting diode element or a semiconductor laser element is adhered to a substrate, it is necessary to accurately measure a small amount of the resin composition by embossing or using a very thin needle tube. Apply to the substrate. The resin composition used for imprinting is required to have a small change in viscosity on a glass plate or the like, and it is required that the resin composition used in the point of using a very thin needle tube does not cause clogging of the resin composition in the needle tube.
本實施形態之樹脂組成物因黏度變化小、作業性優良,以壓印或用極細針管的點著等,能將少量樹脂組成物厚度精準地塗布於基材。因此,雖然沒有特別限定,但適合將發光二極體元件或半導體雷射元件等晶片寬度小的半導體元件黏著於基材。 The resin composition of the present embodiment has a small change in viscosity and excellent workability, and can accurately apply a small amount of the resin composition to the substrate by imprinting or by using a very thin needle tube. Therefore, although it is not particularly limited, it is suitable to adhere a semiconductor element having a small wafer width such as a light-emitting diode element or a semiconductor laser element to a substrate.
(熱硬化性樹脂) (thermosetting resin)
(A)熱硬化性樹脂係經由加熱來形成3次元的網目構造之一般熱硬化性樹脂。此(A)熱硬化性樹脂無特別限定,但較佳為形成液狀樹脂組成物之材料,最好是在室溫下為液 狀。可與出例如:氰酸酯樹脂、環氧樹脂、於1分子內有2個以上自由基聚合性碳-碳雙鍵之樹脂、順丁烯二醯亞胺樹脂等。 (A) A thermosetting resin is a general thermosetting resin which forms a three-dimensional mesh structure by heating. The (A) thermosetting resin is not particularly limited, but is preferably a material which forms a liquid resin composition, and is preferably a liquid at room temperature. shape. For example, a cyanate resin, an epoxy resin, a resin having two or more radical polymerizable carbon-carbon double bonds in one molecule, a maleimide resin, or the like can be used.
(A)熱硬化性樹脂之氰酸酯樹脂係在分子內有-NCO基的化合物,係經由加熱使得-NCO基反應形成3次元的網目構造,而硬化之樹脂、硬化之多官能氰酸酯化合物或其低分子聚合物。(A)熱硬化性樹脂之氰酸酯樹脂無特別限定,可舉出例如:1,3-二氰氧基苯、1,4-二氰氧基苯、1,3,5-三氰氧基苯、1,3-二氰氧基萘、1,4-二氰氧基萘、1,6-二氰氧基萘、1,8-二氰氧基萘、2,6-二氰氧基萘、2,7-二氰氧基萘、1,3,6-三氰氧基萘、4,4'-二氰氧基聯苯、雙(4-氰氧基苯基)甲烷、雙(3,5-二甲基-4-氰氧基苯基)甲烷、2,2-雙(4-氰氧基苯基)丙烷、2,2-雙(3,5-二溴-4-氰氧基苯基)丙烷、雙(4-氰氧基苯基)醚、雙(4-氰氧基苯基)硫醚、雙(4-氰氧基苯基)碸、參(4-氰氧基苯基)亞磷酸酯、參(4-氰氧基苯基)磷酸酯等反應物,及經由與酚醛樹脂和鹵化胺反應所得到之氰酸酯類等,還可舉出藉由將此等多官能氰酸酯樹脂的氰酸酯基三聚化所形成之有三嗪環的預聚物。此預聚物能藉由將上述多官能氰酸酯樹脂單體,以例如礦物酸、路易士酸等酸、醇鈉、三級胺類等鹼、碳酸鈉等鹽類為觸媒來聚合獲得。 (A) The cyanate resin of the thermosetting resin is a compound having a -NCO group in the molecule, which is a structure in which a -NCO group is reacted to form a three-dimensional network structure by heating, and the hardened resin and the hardened polyfunctional cyanate are cured. a compound or a low molecular weight polymer thereof. (C) The cyanate resin of the thermosetting resin is not particularly limited, and examples thereof include 1,3-dicyanooxybenzene, 1,4-dicyanooxybenzene, and 1,3,5-tricyanoxine. Benzobenzene, 1,3-dicyanooxynaphthalene, 1,4-dicyanooxynaphthalene, 1,6-dicyanooxynaphthalene, 1,8-dicyanooxynaphthalene, 2,6-dicyandi Naphthalene, 2,7-dicyanooxynaphthalene, 1,3,6-tricyanooxynaphthalene, 4,4'-dicyanoxybiphenyl, bis(4-cyanooxyphenyl)methane, double (3,5-Dimethyl-4-cyanooxyphenyl)methane, 2,2-bis(4-cyanooxyphenyl)propane, 2,2-bis(3,5-dibromo-4- Cyanooxyphenyl)propane, bis(4-cyanooxyphenyl)ether, bis(4-cyanooxyphenyl) sulfide, bis(4-cyanooxyphenyl)fluorene, ginseng (4-cyano a reaction product such as oxyphenyl)phosphite or bis(cyanooxyphenyl)phosphate, and a cyanate ester obtained by reacting with a phenol resin and an amine halide, etc., A prepolymer of a triazine ring formed by the trimerization of cyanate groups of these polyfunctional cyanate resins. The prepolymer can be obtained by polymerizing the above polyfunctional cyanate resin monomer with a base such as an acid such as mineral acid or Lewis acid, a sodium alkoxide or a tertiary amine, or a salt such as sodium carbonate. .
(A)熱硬化性樹脂之氰酸酯樹脂的硬化促進劑可舉出一般眾人皆知之物。例如,辛酸鋅、辛酸錫、環烷酸鈷、環烷酸鋅、乙醯丙酮鐵等有機金屬錯合物、氯化鋁、氯化錫、氯化鋅等金屬鹽、三乙胺、二甲基苄基胺等胺類,但不限於此。此等硬化促進劑可使用單獨1種或2種以上併用。 (A) The hardening accelerator of the cyanate resin of the thermosetting resin can be exemplified by a general public. For example, an organic metal complex such as zinc octoate, tin octylate, cobalt naphthenate, zinc naphthenate, iron acetonitrile, metal salts such as aluminum chloride, tin chloride, zinc chloride, triethylamine, and dimethyl An amine such as a benzylamine, but is not limited thereto. These hardening accelerators may be used alone or in combination of two or more.
另外,亦能併用氰酸酯樹脂、與環氧樹脂、氧雜環丁烷樹脂、於1分子內有2個以上自由基聚合性碳-碳雙鍵之樹脂、順丁烯二醯亞胺樹脂等其它樹脂。 Further, a cyanate resin, an epoxy resin, an oxetane resin, a resin having two or more radically polymerizable carbon-carbon double bonds in one molecule, and a maleimide resin can also be used in combination. Other resins.
(A)熱硬化性樹脂之環氧樹脂係在分子內有1個以上縮水甘油基之化合物,係經由加熱使得縮水甘油基反應形成3次元的網目構造,而硬化之化合物。(A)熱硬化性樹脂之環氧樹脂,較佳為在1分子內含有2個以上縮水甘油基之物,此係因為即便使得僅有1個縮水甘油基之化合物反應,也無法顯示充分的硬化物特性之故。 (A) The epoxy resin of the thermosetting resin is a compound having one or more glycidyl groups in the molecule, and is a compound which is cured by a glycidyl group by heating to form a three-dimensional network structure. (A) The epoxy resin of the thermosetting resin is preferably one containing two or more glycidyl groups in one molecule, because even if only one glycidyl group-containing compound is reacted, it is not sufficient to exhibit sufficient The nature of the hardened material.
(A)熱硬化性樹脂之環氧樹脂之中,於1分子含有2個以上縮水甘油基之化合物可舉出:雙酚A、雙酚F、聯苯酚等雙酚化合物或彼等的衍生物、氫化雙酚A、氫化雙酚F、氫化聯苯酚;環己二醇、環己二甲醇、環己二乙醇等有脂環構造之二醇或彼等之衍生物;將丁二醇、己二醇、辛二醇、壬二醇、癸二醇等脂肪族二醇或彼等之衍生物等環氧化之2官能物;有三羥苯基甲烷骨架、胺基酚骨架之3官能物;將酚醛樹脂、甲酚醛樹脂、酚芳烷基樹脂、聯苯基芳烷基樹脂、萘酚芳烷基樹脂等環氧化之多官能物等,但不限於此。又,因作為樹脂組成物較佳為在室溫下為液狀者,所以(A)熱硬化性樹脂之環氧樹脂較佳係單獨或以混合物在室溫下為液狀者。將二醇或其衍生物環氧化之方法可舉出:藉由使二醇或其衍生物的2個羥基與表氯醇反應,將其變換為縮水甘油醚,而進行環氧化之方法等。另外,對3官能以上之物也是一樣。 (A) Among the epoxy resins of the thermosetting resin, a compound containing two or more glycidyl groups per molecule may be a bisphenol compound such as bisphenol A, bisphenol F or biphenol, or a derivative thereof. Hydrogenated bisphenol A, hydrogenated bisphenol F, hydrogenated biphenol; diol having alicyclic structure such as cyclohexanediol, cyclohexanedimethanol or cyclohexane diethanol or derivatives thereof; An epoxidized bifunctional such as an aliphatic diol such as a diol, octanediol, decanediol or decanediol or a derivative thereof; a trifunctional structure having a trishydroxyphenylmethane skeleton or an aminophenol skeleton; An epoxidized polyfunctional substance such as a phenol resin, a cresol resin, a phenol aralkyl resin, a biphenyl aralkyl resin, or a naphthol aralkyl resin, but is not limited thereto. Further, since the resin composition is preferably liquid at room temperature, the epoxy resin of the (A) thermosetting resin is preferably liquid alone or in a mixture at room temperature. A method of epoxidizing a diol or a derivative thereof by a method in which two hydroxyl groups of a diol or a derivative thereof are reacted with epichlorohydrin to convert it into a glycidyl ether, and epoxidation is carried out. In addition, the same applies to the trifunctional or higher substances.
如通常所進行般,亦能使用活性稀釋劑。活性稀釋劑可舉出:苯基縮水甘油基醚、三級丁基苯基縮水甘油基醚、 甲苯酚基縮水甘油基醚等1官能的芳香族縮水甘油基醚類、脂肪族縮水甘油基醚類等。 Reactive diluents can also be used as is conventional. Examples of the reactive diluent include phenyl glycidyl ether and tertiary butyl phenyl glycidyl ether. A monofunctional aromatic glycidyl ether such as a cresyl glycidyl ether or an aliphatic glycidyl ether.
作為(A)熱硬化性樹脂,在使用上述(A)熱硬化性樹脂之環氧樹脂的情形,為了使環氧樹脂硬化,本實施形態之樹脂組成物係包含硬化劑。 In the case of using the epoxy resin of the (A) thermosetting resin as the (A) thermosetting resin, the resin composition of the present embodiment contains a curing agent in order to cure the epoxy resin.
作為(A)熱硬化性樹脂之環氧樹脂的硬化劑,可舉出例如:脂肪族胺、芳香族胺、雙氰胺、二醯肼化合物、酸酐、酚樹脂等。 Examples of the curing agent of the epoxy resin of the (A) thermosetting resin include an aliphatic amine, an aromatic amine, a dicyandiamide, a diterpene compound, an acid anhydride, and a phenol resin.
作為(A)熱硬化性樹脂之環氧樹脂的硬化劑之二醯肼化合物,可舉出己二酸二醯肼、十二酸二醯肼、間苯二甲酸二醯肼、對羥苯甲酸二醯肼等羧酸二醯肼等。 Examples of the diterpene compound of the hardener of the (A) thermosetting resin epoxy resin include dioxane adipate, dinonanoate, diammonium isophthalate, and p-hydroxybenzoic acid. Diterpenoid carboxylic acid diterpene and the like.
作為環氧樹脂的硬化劑之酸酐可舉出:鄰苯二甲酸酐、四氫鄰苯二甲酸、六氫鄰苯二甲酸、4-甲基六氫鄰苯二甲酸、內亞甲四氫鄰苯二甲酸酐、十二烯丁二酸酐、順丁烯二酸酐等。 Examples of the acid anhydride of the hardener of the epoxy resin include phthalic anhydride, tetrahydrophthalic acid, hexahydrophthalic acid, 4-methylhexahydrophthalic acid, and tetramethylene tetrahydroortho Phthalic anhydride, dodecene succinic anhydride, maleic anhydride, and the like.
作為(A)熱硬化性樹脂之環氧樹脂的硬化劑之酚樹脂,係在1分子內有2個以上酚性羥基之化合物。在於1分子內有1個酚性羥基之化合物的情形,因無法做為交聯構造,故硬化物特性差而無法使用。又,作為(A)熱硬化性樹脂之環氧樹脂的硬化劑的酚樹脂,只要是在1分子內有2個以上酚性羥基者即可,較佳為在1分子內有2個以上5個以下酚性羥基者,更佳為在1分子內有2個或3個酚性羥基者。在比此多的情形,因分子量變得過大、樹脂組成物的黏度變得過高而較不佳。此種化合物可舉出:雙酚F、雙酚A、雙酚S、四甲基雙酚A、四甲基雙酚F、四甲基雙酚S、二羥基聯苯基醚、二羥基二苯基酮、四甲基聯苯酚、 亞乙基雙酚、甲基亞乙基雙(甲基酚)、亞環己基雙酚、聯苯酚等雙酚類與其衍生物、三(羥苯基)甲烷、三(羥苯基)乙烷等3官能酚類與其衍生物;酚醛、甲酚醛等酚類與甲醛反應所得到之化合物中以二核體或三核體為主之物與其衍生物等。 The phenol resin which is a hardener of the epoxy resin of (A) thermosetting resin is a compound which has two or more phenolic hydroxyl groups in one molecule. In the case of a compound having one phenolic hydroxyl group in one molecule, since it cannot be used as a crosslinked structure, the properties of the cured product are poor and cannot be used. In addition, the phenol resin which is a curing agent of the epoxy resin of the (A) thermosetting resin may be two or more phenolic hydroxyl groups in one molecule, and preferably two or more in one molecule. The following phenolic hydroxyl groups are more preferably those having 2 or 3 phenolic hydroxyl groups in one molecule. In many cases, the molecular weight becomes too large, and the viscosity of the resin composition becomes too high, which is not preferable. Such a compound may, for example, be bisphenol F, bisphenol A, bisphenol S, tetramethyl bisphenol A, tetramethyl bisphenol F, tetramethyl bisphenol S, dihydroxybiphenyl ether or dihydroxy bis Phenyl ketone, tetramethylbiphenol, Bisphenols such as ethylene bisphenol, methyl ethylene bis(methyl phenol), cyclohexylene bisphenol, biphenol, and derivatives thereof, tris(hydroxyphenyl)methane, tris(hydroxyphenyl)ethane A trinuclear or trinuclear compound, a derivative thereof, and the like, and a compound obtained by reacting a phenol such as phenol or cresol with formaldehyde.
(A)熱硬化性樹脂之環氧樹脂的硬化促進劑可舉出:咪唑類、三苯基膦或四苯基鏻的鹽類、偶氮雙環十一烯等胺系化合物與其鹽類等,較佳有2-甲基咪唑、2-乙基咪唑-2-苯基咪唑、2-苯基-4-甲基咪唑、2-苯基-4-甲基-5-羥甲基咪唑、2-苯基-4,5-二羥甲基咪唑、2-C11H23-咪唑、2-甲基咪唑與2,4-二胺基-6-乙烯基三嗪的加成物等咪唑化合物。其中,特佳為熔點180℃以上之咪唑化合物。另外,環氧樹脂亦適合與氰酸酯樹脂、於1分子內有2個以上自由基聚合性碳-碳雙鍵之樹脂、順丁烯二醯亞胺樹脂併用。 (A) The curing accelerator of the epoxy resin of the thermosetting resin may, for example, be an imidazole, a salt of triphenylphosphine or tetraphenylphosphonium, an amine compound such as azobiscycloundecene or a salt thereof. Preferred are 2-methylimidazole, 2-ethylimidazole-2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2 Imidazole compound such as phenyl-4,5-dimethylolimidazole, 2-C 11 H 23 -imidazole, adduct of 2-methylimidazole and 2,4-diamino-6-vinyltriazine . Among them, an imidazole compound having a melting point of 180 ° C or higher is particularly preferred. Further, the epoxy resin is also preferably used in combination with a cyanate resin, a resin having two or more radical polymerizable carbon-carbon double bonds in one molecule, and a maleimide resin.
(A)熱硬化性樹脂之於1分子內有2個以上自由基聚合性碳-碳雙鍵之樹脂,係在分子內有碳-碳雙鍵之化合物,係藉由碳-碳雙鍵形成3次元的網目構造,而硬化之樹脂。 (A) A thermosetting resin having two or more radically polymerizable carbon-carbon double bonds in one molecule, a compound having a carbon-carbon double bond in a molecule, formed by a carbon-carbon double bond 3 dimensional mesh structure, and hardened resin.
在(A)熱硬化性樹脂之於1分子內有2個以上自由基聚合性碳-碳雙鍵之樹脂中,(A)的分子量較佳為500以上50,000以下。其係因為在比上述範圍小之情形,黏著層的彈性率會變得過高,而在比上述範圍大之情形,樹脂組成物的黏度會變得過高。 In the resin of the (A) thermosetting resin having two or more radically polymerizable carbon-carbon double bonds in one molecule, the molecular weight of (A) is preferably from 500 to 50,000. In the case where it is smaller than the above range, the modulus of elasticity of the adhesive layer may become too high, and in the case where it is larger than the above range, the viscosity of the resin composition may become too high.
以下例示較佳之於1分子內有2個以上自由基聚合性碳-碳雙鍵之樹脂,但並非受限於此。 The resin preferably having two or more radical polymerizable carbon-carbon double bonds in one molecule is exemplified below, but is not limited thereto.
在1分子內有2個以上丙烯基之化合物,較佳為分子量在500以上50,000以下之聚醚、聚酯、聚碳酸酯、聚(甲 基)丙烯酸酯、聚丁二烯、以丁二烯-丙烯腈共聚物在1分子內有2個以上丙烯基之化合物。 a compound having two or more propylene groups in one molecule, preferably a polyether, a polyester, a polycarbonate, or a poly(methyl) having a molecular weight of 500 or more and 50,000 or less. A acrylate, a polybutadiene, or a compound having two or more propylene groups in one molecule of a butadiene-acrylonitrile copolymer.
聚醚較佳為碳數3~6的有機基夾著醚鍵重複之物,以不含芳香族環者較佳。在包含芳香族環之情形,作為於1分子內有2個以上丙烯基之化合物會變成固態或高黏度,而在作為硬化物之情形會使得彈性率變得過高。又,在1分子內有2個以上丙烯基之化合物的分子量係如上所述,較佳為500以上、50,000以下,更佳為500以上、5,000以下,特佳為500以上2,000以下。若在此範圍內,則作業性良好,能得到彈性率低的黏著層。此種在1分子內有2個以上丙烯基之聚醚化合物,能藉由使得聚醚多元醇和(甲基)丙烯酸與其衍生物反應來得到。 The polyether is preferably an organic group having a carbon number of 3 to 6 which is repeated with an ether bond, and is preferably one which does not contain an aromatic ring. In the case of containing an aromatic ring, a compound having two or more propylene groups in one molecule becomes solid or highly viscous, and in the case of a cured product, the modulus of elasticity is excessively high. In addition, the molecular weight of the compound having two or more propylene groups in one molecule is preferably 500 or more and 50,000 or less, more preferably 500 or more and 5,000 or less, and particularly preferably 500 or more and 2,000 or less, as described above. If it is in this range, workability is good, and an adhesive layer having a low modulus of elasticity can be obtained. Such a polyether compound having two or more propylene groups in one molecule can be obtained by reacting a polyether polyol with (meth)acrylic acid with a derivative thereof.
聚酯較佳為碳數3~6的有機基夾著酯鍵重複之物,以不含芳香族環者較佳。在包含芳香族環之情形,作為於1分子內有2個以上丙烯基之化合物會變成固態或高黏度,而在作為硬化物之情形會使得彈性率變得過高。又,在1分子內有2個以上丙烯基之化合物的分子量係如上所述,較佳為500以上、50,000以下,更佳為500以上、5,000以下,特佳為500以上2,000以下。若在此範圍內,則作業性良好,能得到彈性率低的黏著層。此種在1分子內有2個以上丙烯基之聚酯化合物,能藉由使得聚酯多元醇和(甲基)丙烯酸與其衍生物反應來得到。 The polyester is preferably an organic group having 3 to 6 carbon atoms which is repeated with an ester bond, and is preferably one which does not contain an aromatic ring. In the case of containing an aromatic ring, a compound having two or more propylene groups in one molecule becomes solid or highly viscous, and in the case of a cured product, the modulus of elasticity is excessively high. In addition, the molecular weight of the compound having two or more propylene groups in one molecule is preferably 500 or more and 50,000 or less, more preferably 500 or more and 5,000 or less, and particularly preferably 500 or more and 2,000 or less, as described above. If it is in this range, workability is good, and an adhesive layer having a low modulus of elasticity can be obtained. Such a polyester compound having two or more propylene groups in one molecule can be obtained by reacting a polyester polyol with (meth)acrylic acid with a derivative thereof.
聚碳酸酯較佳為碳數3~6的有機基夾著碳酸酯鍵重複之物,以不含芳香族環者較佳。在包含芳香族環之情形,作為於1分子內有2個以上丙烯基之化合物會變成固態或高黏度,而在作為硬化物之情形會使得彈性率變得過高。 又,在1分子內有2個以上丙烯基之化合物的分子量係如上所述,較佳為500以上、50,000以下,更佳為500以上、5,000以下,特佳為500以上2,000以下。若在此範圍內,則作業性良好,能得到彈性率低的黏著層。此種在1分子內有2個以上丙烯基之聚碳酸酯化合物,能藉由使得聚碳酸酯多元醇和(甲基)丙烯酸與其衍生物反應來得到。 The polycarbonate is preferably an organic group having a carbon number of 3 to 6 which is repeated with a carbonate bond, and is preferably one which does not contain an aromatic ring. In the case of containing an aromatic ring, a compound having two or more propylene groups in one molecule becomes solid or highly viscous, and in the case of a cured product, the modulus of elasticity is excessively high. In addition, the molecular weight of the compound having two or more propylene groups in one molecule is preferably 500 or more and 50,000 or less, more preferably 500 or more and 5,000 or less, and particularly preferably 500 or more and 2,000 or less, as described above. If it is in this range, workability is good, and an adhesive layer having a low modulus of elasticity can be obtained. Such a polycarbonate compound having two or more propylene groups in one molecule can be obtained by reacting a polycarbonate polyol and (meth)acrylic acid with a derivative thereof.
聚(甲基)丙烯酸酯較佳為:(甲基)丙烯酸與(甲基)丙烯酸酯的共聚物、有羥基之(甲基)丙烯酸酯與沒有極性基之(甲基)丙烯酸酯的共聚物、有縮水甘油基之(甲基)丙烯酸酯與沒有極性基之(甲基)丙烯酸酯的共聚物。而在1分子內有2個以上丙烯基之化合物的分子量係如上述般較佳為500以上50,000以下,更佳為500以上25,000以下。若在此範圍內則作業性良好,能得到彈性率低的黏著層。此種在1分子內有2個以上丙烯基之(甲基)丙烯酸酯化合物,在有羧基之共聚物的情形,能藉由和有羥基之(甲基)丙烯酸酯或有縮水甘油基之(甲基)丙烯酸酯反應來得到,在有羥基之共聚物的情形,能藉由和(甲基)丙烯酸與其衍生物反應來得到,在有縮水甘油基之共聚物的情形,能藉由和(甲基)丙烯酸與其衍生物反應來得到。 The poly(meth) acrylate is preferably a copolymer of (meth)acrylic acid and (meth) acrylate, a copolymer of a hydroxyl group (meth) acrylate and a (meth) acrylate having no polar group. And a copolymer of a glycidyl (meth) acrylate and a (meth) acrylate having no polar group. The molecular weight of the compound having two or more propylene groups in one molecule is preferably 500 or more and 50,000 or less, and more preferably 500 or more and 25,000 or less as described above. If it is in this range, workability is good, and an adhesive layer having a low modulus of elasticity can be obtained. Such a (meth) acrylate compound having two or more propylene groups in one molecule can be used in the case of a copolymer having a carboxyl group by a (meth) acrylate having a hydroxyl group or a glycidyl group ( Methyl) acrylate reaction can be obtained by reacting (meth)acrylic acid with a derivative thereof in the case of a copolymer having a hydroxyl group, and in the case of a copolymer having a glycidyl group, Methyl)acrylic acid is obtained by reacting with its derivative.
聚丁二烯能藉由將有羧基之聚丁二烯與有羥基之(甲基)丙烯酸酯或有縮水甘油基之(甲基)丙烯酸酯反應,或將有羥基之聚丁二烯與(甲基)丙烯酸及其衍生物反應來得到,另外亦能藉由將羥順丁烯二酸酐加成之聚丁二烯與有羥基之(甲基)丙烯酸酯反應來得到。 Polybutadiene can be obtained by reacting a polybutadiene having a carboxyl group with a (meth) acrylate having a hydroxyl group or a (meth) acrylate having a glycidyl group, or a polybutadiene having a hydroxyl group ( Methyl)acrylic acid and its derivatives are obtained by reaction, and can also be obtained by reacting polybutadiene obtained by adding hydroxy maleic anhydride with a hydroxyl group-containing (meth) acrylate.
丁二烯丙烯腈共聚物能藉由將有羧基之丁二烯丙烯腈共聚物,與有羥基之(甲基)丙烯酸酯或有縮水甘油基之(甲 基)丙烯酸酯反應來得到。 Butadiene acrylonitrile copolymer can be obtained by copolymerizing a butadiene acrylonitrile copolymer having a carboxyl group with a (meth) acrylate having a hydroxyl group or a glycidyl group (A) Acrylate reaction to obtain.
於1分子內有2個以上烯丙基之化合物較佳係分子量在500以上50,000以下之聚醚、聚酯、聚碳酸酯、聚丙烯酸酯、聚甲基丙烯酸酯、聚丁二烯、以丁二烯丙烯腈共聚物具有烯丙基之化合物,例如將乙二酸、丙二酸、丁二酸、戊二酸、己二酸、庚二酸、辛二酸、壬二酸、癸二酸、順丁烯二酸、反丁烯二酸、鄰苯二甲酸、四氫鄰苯二甲酸、六氫鄰苯二甲酸及彼等之衍生物等二羧酸及其衍生物,與烯丙醇反應所得到之二烯丙酯化合物與乙二醇、丙二醇、伸丁二醇等二醇的反應物等。 The compound having two or more allyl groups in one molecule is preferably a polyether, a polyester, a polycarbonate, a polyacrylate, a polymethacrylate, a polybutadiene, a butyl having a molecular weight of 500 or more and 50,000 or less. A diene acrylonitrile copolymer having an allyl compound, for example, oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, pimelic acid, suberic acid, azelaic acid, sebacic acid Dicarboxylic acids and derivatives thereof, maleic acid, fumaric acid, phthalic acid, tetrahydrophthalic acid, hexahydrophthalic acid and derivatives thereof, and allyl alcohol A reaction product of a diallyl compound obtained by the reaction with a diol such as ethylene glycol, propylene glycol or butylene glycol.
於1分子內有2個以上順丁烯二醯亞胺基之化合物較佳可舉出例如:N,N'-(4,4'-二苯基甲烷)雙馬來亞醯胺、雙(3-乙基-5-甲基-4-順丁烯二醯亞胺苯基)甲烷、2,2-雙[4-(4-順丁烯二醯亞胺苯氧基)苯基]丙烷等雙馬來亞醯胺化合物。更佳之物係藉由二聚酸二胺與順丁烯二酸酐之反應而得到之化合物,及藉由順丁烯二醯亞胺乙酸、順丁烯二醯亞胺己酸等順丁烯二醯亞胺化胺基酸與多元醇之反應所得到之化合物。順丁烯二醯亞胺化胺基酸係藉由將順丁烯二酸酐與胺基乙酸或胺基己酸反應而得,作為多元醇,較佳係聚醚多元醇、聚酯多元醇、聚碳酸酯多元醇、聚丙烯酸酯多元醇、聚甲基丙烯酸酯多元醇,特佳係不包含芳香族環。在包含芳香族環之情形,作為於1分子內有2個以上順丁烯二醯亞胺基之化合物會變成固態或高黏度,而在作為硬化物之情形彈性率會變得過高。 The compound having two or more maleimide groups in one molecule is preferably, for example, N,N'-(4,4'-diphenylmethane) bismaleimide or bis ( 3-ethyl-5-methyl-4-maleimidoimine phenyl)methane, 2,2-bis[4-(4-maleoximine phenoxy)phenyl]propane And other bimaleimide compounds. More preferred are compounds obtained by the reaction of dimer acid diamine and maleic anhydride, and by maleic acid such as maleimide acetic acid or maleimide hexanoic acid. A compound obtained by the reaction of a hydrazinium amino acid with a polyol. The maleimide-imidized amino acid is obtained by reacting maleic anhydride with aminoacetic acid or aminocaproic acid, and is preferably a polyether polyol or a polyester polyol. The polycarbonate polyol, the polyacrylate polyol, and the polymethacrylate polyol preferably contain no aromatic ring. In the case of containing an aromatic ring, a compound having two or more maleimide groups in one molecule becomes solid or highly viscous, and in the case of a cured product, the modulus of elasticity becomes too high.
另外,為了調整本實施形態之樹脂組成物的各種特性,在不損及(A)熱硬化性樹脂之效果的範圍內,亦能使用 以下化合物。可舉出例如:(甲基)丙烯酸2-羥乙酯、(甲基)丙烯酸2-羥丙酯、(甲基)丙烯酸3-羥丙酯、(甲基)丙烯酸2-羥丁酯、(甲基)丙烯酸3-羥丁酯、(甲基)丙烯酸4-羥丁酯、甘油單(甲基)丙烯酸酯、甘油二(甲基)丙烯酸酯、三羥甲基丙烷單(甲基)丙烯酸酯、三羥甲基丙烷二(甲基)丙烯酸酯、新戊四醇單(甲基)丙烯酸酯、新戊四醇二(甲基)丙烯酸酯、新戊四醇三(甲基)丙烯酸酯、新戊二醇單(甲基)丙烯酸酯等有羥基的(甲基)丙烯酸酯,與將此等有羥基之(甲基)丙烯酸酯與二羧酸或其衍生物反應所得到之有羧基的(甲基)丙烯酸酯等。能使用於此的二羧酸可舉出例如:乙二酸、丙二酸、丁二酸、戊二酸、己二酸、庚二酸、辛二酸、壬二酸、癸二酸、順丁烯二酸、反丁烯二酸、鄰苯二甲酸、四氫鄰苯二甲酸、六氫鄰苯二甲酸及彼等的衍生物。 Moreover, in order to adjust various characteristics of the resin composition of this embodiment, it can also be used in the range which does not impair the effect of (A) thermosetting resin. The following compounds. For example, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 3-hydroxypropyl (meth)acrylate, 2-hydroxybutyl (meth)acrylate, ( 3-hydroxybutyl methacrylate, 4-hydroxybutyl (meth) acrylate, mono (meth) acrylate, glycerol di(meth) acrylate, trimethylolpropane mono (meth) acrylate Ester, trimethylolpropane di(meth) acrylate, neopentyl alcohol mono (meth) acrylate, neopentyl alcohol di (meth) acrylate, neopentyl alcohol tri (meth) acrylate a hydroxyl group-containing (meth) acrylate such as neopentyl glycol mono(meth)acrylate, and a carboxyl group obtained by reacting such a hydroxyl group-containing (meth) acrylate with a dicarboxylic acid or a derivative thereof (meth) acrylate and the like. Examples of the dicarboxylic acid which can be used herein include oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, pimelic acid, suberic acid, sebacic acid, sebacic acid, and cis. Butylene diacid, fumaric acid, phthalic acid, tetrahydrophthalic acid, hexahydrophthalic acid and derivatives thereof.
除了上述以外,亦能使用(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸正丁酯、(甲基)丙烯酸異丁酯、三級丁(甲基)丙烯酸酯、異癸基(甲基)丙烯酸酯、十二基(甲基)丙烯酸酯、十三基(甲基)丙烯酸酯、2-乙基己(甲基)丙烯酸酯、其它烷基(甲基)丙烯酸酯、苄基(甲基)丙烯酸酯、苯氧基乙基(甲基)丙烯酸酯、縮水甘油(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、鋅單(甲基)丙烯酸酯、鋅二(甲基)丙烯酸酯、(甲基)丙烯酸二甲胺基乙酯、(甲基)丙烯酸二乙胺基乙酯、新戊二醇(甲基)丙烯酸酯、(甲基)丙烯酸三氟乙酯、(甲基)丙烯酸2,2,3,3-四氟丙酯、(甲基)丙烯酸2,2,3,3,4,4-六氟丁酯、(甲基)丙烯酸全氟辛酯、(甲基)丙烯酸全氟辛基乙酯、乙二醇二(甲基)丙烯酸酯、丙二醇二(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯、1,6-己二醇二 (甲基)丙烯酸酯、1,9-壬二醇二(甲基)丙烯酸酯、1,3-丁二醇二(甲基)丙烯酸酯、1,10-癸二醇二(甲基)丙烯酸酯、伸丁二醇二(甲基)丙烯酸酯、甲氧基乙基(甲基)丙烯酸酯、丁氧基乙基(甲基)丙烯酸酯、乙氧基二乙二醇(甲基)丙烯酸酯、N,N'-亞甲基雙(甲基)丙烯醯胺、N,N'-伸乙雙(甲基)丙烯醯胺、1,2-二(甲基)丙烯醯胺乙二醇、二(甲基)丙烯醯氧基甲基三環癸烷、N-(甲基)丙烯醯氧基乙基順丁烯二醯亞胺、N-(甲基)丙烯醯氧基乙基六氫酞醯亞胺、N-(甲基)丙烯醯氧基乙基酞醯亞胺、正乙烯基-2-吡咯烷酮、苯乙烯衍生物、α-甲基苯乙烯衍生物等。 In addition to the above, methyl (meth) acrylate, ethyl (meth) acrylate, n-butyl (meth) acrylate, isobutyl (meth) acrylate, tertiary butyl (meth) acrylate can also be used. , isodecyl (meth) acrylate, dodecyl (meth) acrylate, tridecyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, other alkyl (methyl) Acrylate, benzyl (meth) acrylate, phenoxyethyl (meth) acrylate, glycidyl (meth) acrylate, trimethylolpropane tri (meth) acrylate, zinc single (A) Acrylate, zinc di(meth)acrylate, dimethylaminoethyl (meth)acrylate, diethylaminoethyl (meth)acrylate, neopentyl glycol (meth)acrylate, Trifluoroethyl methacrylate, 2,2,3,3-tetrafluoropropyl (meth) acrylate, 2,2,3,3,4,4-hexafluorobutyl (meth) acrylate, Perfluorooctyl methacrylate, perfluorooctyl (meth) acrylate, ethylene glycol di(meth) acrylate, propylene glycol di(meth) acrylate, 1,4-butanediol bis ( Methyl) acrylate, 1,6-hexanediol II (Meth) acrylate, 1,9-nonanediol di(meth) acrylate, 1,3-butylene glycol di(meth) acrylate, 1,10-nonanediol di(meth)acrylic acid Ester, butanediol di(meth)acrylate, methoxyethyl (meth) acrylate, butoxyethyl (meth) acrylate, ethoxy diethylene glycol (meth) acrylate Ester, N, N'-methylenebis(meth) acrylamide, N, N'-extended ethylene bis(methyl) acrylamide, 1,2-di(methyl) propylene decyl glycol , di(methyl)propenyloxymethyltricyclodecane, N-(methyl)propenyloxyethyl maleimide, N-(methyl)acryloxyethyl 6 Hydroquinoneimine, N-(meth)acrylomethoxyethyliminoimine, n-vinyl-2-pyrrolidone, styrene derivatives, α-methylstyrene derivatives, and the like.
此外,較佳係使用熱自由基聚合起始劑作為(A)熱硬化性樹脂之於1分子內有2個以上自由基聚合性碳-碳雙鍵之樹脂的聚合起始劑。通常使用作為熱自由基聚合起始劑之物無特別限定,但期望較佳係在急速加熱試驗(將試料1g置於電熱板上,以4℃/分鐘升溫時的分解開始溫度)中,分解溫度為40℃以上140℃以下之物。若分解溫度小於40℃,則樹脂組成物在常溫下的保存性會變差,若超過140℃,則因硬化時間會變得極端的長而較不佳。 Further, it is preferred to use a thermal radical polymerization initiator as a polymerization initiator of a resin having two or more radical polymerizable carbon-carbon double bonds in one molecule of (A) a thermosetting resin. The material to be used as the thermal radical polymerization initiator is not particularly limited, but it is preferably decomposed in a rapid heating test (1 g of the sample is placed on a hot plate at a decomposition start temperature at a temperature of 4 ° C/min). The temperature is 40 ° C or more and 140 ° C or less. When the decomposition temperature is less than 40 ° C, the storage stability of the resin composition at normal temperature is deteriorated, and if it exceeds 140 ° C, the curing time becomes extremely long and is not preferable.
滿足此點的熱自由基聚合起始劑之具體例可舉出:過氧化甲基乙基酮、過氧化甲基環己酮、過氧化乙醯乙酸甲酯、過氧化乙醯丙酮、1,1-雙(三級丁基過氧基)3,3,5-三甲基環己烷、1,1-雙(三級己基過氧基)環己烷、1,1-雙(三級己基過氧基)3,3,5-三甲基環己烷、1,1-雙(三級丁基過氧基)環己烷、2,2-雙(4,4-二-三級丁基過氧基環己基)丙烷、1,1-雙(三級丁基過氧基)環十二烷、4,4-雙(三級丁基過氧基)戊酸正丁酯、2,2-雙(三級丁基過氧基)丁烷、1,1-雙(三級丁基過氧 基)-2-甲基環己烷、氫過氧化三級丁基、氫過氧化對薄荷烷、氫過氧化1,1,3,3-四甲基丁基、氫過氧化三級己基、過氧化二異丙苯、2,5-二甲基-2,5-雙(三級丁基過氧基)己烷、α,α'-雙(三級丁基過氧基)二異丙基苯、過氧化三級丁基異丙苯、過氧化二-三級丁基、2,5-二甲基-2,5-雙(三級丁基過氧基)-3-己炔、過氧化異丁醯基、過氧化3,5,5-三甲基己醯基、過氧化辛醯基、過氧化十二醯基、過氧化肉桂酸、過氧化間甲苯甲醯基、過氧化苯甲醯基、過氧二碳酸二異丙酯、過氧二碳酸雙(4-三級丁基環己酯)、過氧二碳酸二-3-甲氧基丁酯、過氧二碳酸二-2-乙基己酯、過氧二碳酸二-二級丁基酯、過氧二碳酸二(3-甲基-3-甲氧基丁酯)、過氧二碳酸二(4-三級丁基環己酯)酯、α,α'-雙(新癸醯基過氧基)二異丙基苯、過氧新癸酸異丙苯酯、過氧新癸酸1,1,3,3,-四甲基丁酯、過氧新癸酸1-環己基-1-甲基乙酯、過氧新癸酸三級己酯、過氧新癸酸三級丁酯、過氧異丁酸三級己酯、過氧異丁酸三級丁酯、2,5-二甲基-2,5-雙(2-乙基己醯過氧基)己烷、過氧化-2-乙基己酸1,1,3,3-四甲基丁酯、過氧化-2-乙基己酸1-環己基-1-甲基乙酯、過氧化-2-乙基己酸三級己酯、過氧化-2-乙基己酸三級丁酯、過氧化異丁酸三級丁酯、過氧化順丁烯二酸三級丁酯、過氧化十二酸三級丁酯、過氧化-3,5,5-三甲基己酸三級丁酯、過氧化異丙基碳酸三級丁酯、過氧化-2-乙基己基碳酸三級丁酯、2,5-二甲基-2,5-雙(苯甲醯基過氧基)己烷、過氧化乙酸三級丁酯、過氧化苯甲酸三級己酯、過氧化間甲苯甲醯基苯甲酸三級丁酯、過氧化苯甲酸三級丁酯、雙(三級丁基過氧基)異酞酸酯、過氧化烯丙基碳酸三級丁酯、3,3',4,4'-四(三級丁基過氧基羰基)二苯基酮 等,彼等可單獨使用,或為了抑制硬化性混合2種以上使用。另外、上述之於1分子內有2個以上自由基聚合性碳-碳雙鍵之樹脂亦適合與氰酸酯樹脂、環氧樹脂、順丁烯二醯亞胺樹脂併用。 Specific examples of the thermal radical polymerization initiator which satisfies this point include methyl ethyl ketone peroxide, methyl cyclohexanone peroxide, methyl acetoxyacetate, acetoxyacetone peroxide, 1, 1-bis(tertiary butylperoxy) 3,3,5-trimethylcyclohexane, 1,1-bis(tri-hexylperoxy)cyclohexane, 1,1-double (three-stage) Hexylperoxy)3,3,5-trimethylcyclohexane, 1,1-bis(tri-butylperoxy)cyclohexane, 2,2-bis(4,4-di-tris Butylperoxycyclohexyl)propane, 1,1-bis(tert-butylperoxy)cyclododecane, 4,4-bis(tri-butylperoxy)pentanoic acid n-butyl ester, 2 , 2-bis(tertiary butylperoxy)butane, 1,1-bis(tri-butylperoxy) 2-methylcyclohexane, tertiary butyl hydroperoxide, hydroperoxide, menthane, 1,1,3,3-tetramethylbutyl hydroperoxide, tertiary hexyl hydroperoxide, Dicumyl peroxide, 2,5-dimethyl-2,5-bis(tertiary butylperoxy)hexane, α,α'-bis(tri-butylperoxy)diisopropyl Base benzene, tertiary butyl cumene peroxide, di-tertiary butyl peroxide, 2,5-dimethyl-2,5-bis(tertiary butylperoxy)-3-hexyne, Isobutyl fluorenyl peroxide, 3,5,5-trimethylhexyl peroxide, octyl octyl peroxide, dodecyl peroxide, peroxycinnamic acid, m-toluamyl peroxide, benzoyl peroxide , diisopropyl peroxydicarbonate, bis(4-tert-butylcyclohexyl peroxydicarbonate), di-3-methoxybutyl peroxydicarbonate, di-2-ethyl peroxydicarbonate Hexyl hexyl ester, di-secondary butyl peroxydicarbonate, bis(3-methyl-3-methoxybutyl)peroxydicarbonate, di(4-tert-butylcyclohexyl)peroxydicarbonate Ester) ester, α,α'-bis(xindecylperoxy)diisopropylbenzene, cumene peroxy neodecanoate, peroxy neodecanoic acid 1,1,3,3,-four Methyl butyl ester, peroxy neodecanoic acid 1-ring Base-1-methylethyl ester, tertiary hexyl peroxy neodecanoate, tertiary butyl peroxy neodecanoate, tertiary hexyl peroxyisobutyrate, tertiary butyl peroxyisobutyrate, 2 , 5-dimethyl-2,5-bis(2-ethylhexylperoxy)hexane, 1,1,3,3-tetramethylbutyl peroxy-2-ethylhexanoate, 1-cyclohexyl-1-methylethyl oxy-2-ethylhexanoate, tertiary hexyl peroxy-2-ethylhexanoate, tertiary butyl peroxy-2-ethylhexanoate, peroxidation Tert-butyl butyl butyrate, tertiary butyl maleate, butyl peroxydoteate, tertiary butyl peroxy-3,5,5-trimethylhexanoate, Oxidation of isopropyl isopropyl carbonate, tertiary butyl peroxy-2-ethylhexyl carbonate, 2,5-dimethyl-2,5-bis(benzylidene peroxy)hexane, Oxidized acetic acid tert-butyl acrylate, benzoic acid tert- hexyl ester, meta-m- tolylmethyl benzoyl benzoate, butyl peroxybenzoate, bis (tertiary butylperoxy) Phthalate, tertiary butyl peroxypropylene carbonate, 3,3',4,4'-tetrakis(tert-butylperoxycarbonyl)diphenyl ketone Alternatively, they may be used singly or in combination of two or more types for suppressing sclerosing. Further, the above-mentioned resin having two or more radical polymerizable carbon-carbon double bonds in one molecule is also preferably used in combination with a cyanate resin, an epoxy resin, or a maleimide resin.
(A)熱硬化性樹脂之順丁烯二醯亞胺樹脂係在1分子內含1個以上順丁烯二醯亞胺基之化合物,經由以加熱將順丁烯二醯亞胺基反應形成3次元的網目構造,來硬化化合物。可舉出例如:N,N'-(4,4'-二苯基甲烷)雙馬來亞醯胺、雙(3-乙基-5-甲基-4-順丁烯二醯亞胺苯基)甲烷、2,2-雙[4-(4-順丁烯二醯亞胺苯氧基)苯基]丙烷的反應物等雙馬來亞醯胺樹脂。更佳(A)熱硬化性樹脂之順丁烯二醯亞胺樹脂係藉由將二聚酸二胺與順丁烯二酸酐反應所得到的化合物,與藉由將順丁烯二醯亞胺乙酸、順丁烯二醯亞胺己酸等順丁烯二醯亞胺化胺基酸與多元醇反應所得到的化合物。順丁烯二醯亞胺化胺基酸能藉由使順丁烯二酸酐與胺基乙酸或胺基己酸反應來得到,多元醇較佳為聚醚多元醇、聚酯多元醇、聚碳酸酯多元醇、聚(甲基)丙烯酸酯多元醇,特佳係不含芳香族環者。順丁烯二醯亞胺基因能與烯丙基反應而亦適合與烯丙酯樹脂併用。烯丙酯樹脂較佳為脂肪族者,其中特佳為經由環己二酸二烯丙酯與脂肪族多元醇的酯交換所得到之化合物。另外亦可與氰酸酯樹脂、環氧樹脂、丙烯酸樹脂併用。 (A) The maleic imide resin of the thermosetting resin is a compound containing one or more maleimide groups in one molecule, and is formed by reacting a maleic acid imide group by heating. A 3 dimensional mesh structure to harden the compound. For example, N,N'-(4,4'-diphenylmethane) bismaleimide, bis(3-ethyl-5-methyl-4-methylenebuteneimide benzene) A bismaleimide resin such as a reaction product of methane or 2,2-bis[4-(4-maleoximeimidophenoxy)phenyl]propane. More preferably (A) a thermosetting resin maleimide resin is a compound obtained by reacting a dimer acid diamine with maleic anhydride, and by using maleimide A compound obtained by reacting a maleic acid imidized amino acid such as acetic acid or maleimide hexanoic acid with a polyhydric alcohol. The maleimide-imidized amino acid can be obtained by reacting maleic anhydride with aminoacetic acid or aminocaproic acid, and the polyhydric alcohol is preferably a polyether polyol, a polyester polyol, or a polycarbonate. Ester polyols, poly(meth) acrylate polyols, especially those which do not contain an aromatic ring. The maleimide gene can be reacted with an allyl group and is also suitable for use with an allyl ester resin. The allyl ester resin is preferably an aliphatic one, and particularly preferably a compound obtained by transesterification of a diallyl cyclohexane adipate with an aliphatic polyol. Alternatively, it may be used in combination with a cyanate resin, an epoxy resin, or an acrylic resin.
(A)熱硬化性樹脂的調配量,在全部樹脂組成物中係2重量%以上40重量%以下,較佳為5重量%以上35重量%以下。藉由在此範圍內,能使樹脂組成物的作業性與耐熱性等更優良。 (A) The amount of the thermosetting resin to be added is 2% by weight or more and 40% by weight or less, preferably 5% by weight or more and 35% by weight or less based on the total resin composition. Within this range, the workability and heat resistance of the resin composition can be made more excellent.
(金屬粒子) (metal particles)
(B)金屬粒子雖只要是d95在10μm以下即無特別限制,但為了使導電性與導熱性優良,較佳可舉出銀粒子。而除了銀以外,可使用例如由銅、金、鎳、鈀、鋁、錫、鋅等所形成的金屬粒子、或此等金屬的合金粒子中的至少1種以上者。 (B) The metal particles are not particularly limited as long as the d 95 is 10 μm or less. However, in order to make the conductivity and the thermal conductivity excellent, silver particles are preferable. In addition to silver, at least one of metal particles formed of copper, gold, nickel, palladium, aluminum, tin, zinc, or the like, or alloy particles of such metals may be used.
此處,銀粒子係包含以銀被覆由銅、金、鎳、鈀、鋁、錫、鋅等所構成之金屬粒子的表面而成之金屬粒子。 Here, the silver particles include metal particles in which the surface of the metal particles composed of copper, gold, nickel, palladium, aluminum, tin, zinc, or the like is coated with silver.
(B)金屬粒子的形狀無特別限定,較佳為鱗片狀或橢圓球狀。金屬粒子的形狀若為鱗片狀或橢圓球狀,則所得到的黏著層特別在導熱性與導電性優良。 (B) The shape of the metal particles is not particularly limited, and is preferably a scaly shape or an elliptical spherical shape. When the shape of the metal particles is a scaly shape or an elliptical shape, the obtained adhesive layer is particularly excellent in thermal conductivity and electrical conductivity.
又,(B)金屬粒子的粒徑依必要的樹脂組成物黏度而不同,通常金屬粒子之以流場式顆粒影像分析儀測定出的體積基準粒度分布之中值粒徑d50較佳為0.5μm以上8μm以下,更佳為0.6μm以上6μm以下。在中值粒徑d50小於0.5μm之情形黏度會變高,中值粒徑d50若超過8μm則因在塗布或硬化時樹脂成分容易流出發生滲出而較不佳。又,中值粒徑d50若超過8μm則在以點膠機塗布樹脂組成物時,會有針管的出口堵塞,無法長時間連續使用的情況。又,金屬粒子的粒徑分布,較佳為其峰值係1個(單峰性)。 Further, (B) the particle diameter of the metal particles differs depending on the viscosity of the resin composition required, and the volume-based particle size distribution d 50 of the volume-based particle size distribution measured by the flow field type particle image analyzer of the metal particles is preferably 0.5. The μm or more is 8 μm or less, and more preferably 0.6 μm or more and 6 μm or less. When the median diameter d 50 is less than 0.5 μm, the viscosity becomes high, and if the median diameter d 50 exceeds 8 μm, the resin component tends to flow out and bleed out at the time of coating or hardening, which is less preferable. Further, when the median diameter d 50 exceeds 8 μm, when the resin composition is applied by a dispenser, the outlet of the needle tube may be clogged and may not be used continuously for a long period of time. Further, the particle size distribution of the metal particles is preferably one peak (monomodality).
又,使用之(B)金屬粒子,其鹵素離子、鹼金屬離子等離子性雜質的含量較佳為10ppm以下。而本實施形態中使用之(B)金屬粒子,亦可使用經過預先以烷氧基矽烷、醯氧基矽烷、矽氮烷、有機胺基矽烷等矽烷偶合劑等處理表面之物。 Further, in the metal particles (B) used, the content of the halogen impurities and the ionic impurities such as alkali metal ions is preferably 10 ppm or less. Further, the metal particles (B) used in the present embodiment may be those which have been treated with a decane coupling agent such as alkoxysilane, decyloxydecane, decane alkane or an organic amine decane.
又,相對於全部樹脂組成物100重量份,(B)金屬粒子 的調配量較佳為50重量份以上95重量份以下,更佳為60重量份以上90重量份以下。若在此範圍內,則可得到良好的導熱性與導電性,作業性亦優良。在樹脂組成物中的(B)金屬粒子小於50重量份之情形,(B)金屬粒子被(A)熱硬化性樹脂覆蓋,(B)金屬粒子有可能無法賦予和重力方向平行的配列,若超過95重量份則因樹脂組成物的黏度變高使得作業性降低,且樹脂組成物的硬化物變脆等,有可能使得耐焊性降低而較不佳。 Further, (B) metal particles with respect to 100 parts by weight of the entire resin composition The blending amount is preferably 50 parts by weight or more and 95 parts by weight or less, more preferably 60 parts by weight or more and 90 parts by weight or less. When it is in this range, good thermal conductivity and electrical conductivity are obtained, and workability is also excellent. When the (B) metal particles in the resin composition are less than 50 parts by weight, (B) the metal particles are covered with (A) a thermosetting resin, and (B) the metal particles may not be provided in parallel with the direction of gravity. When the viscosity of the resin composition is increased, the workability is lowered, and the cured product of the resin composition becomes brittle, which may lower the solder resistance and is less preferable.
(絕緣粒子) (insulating particles)
又,本實施形態的樹脂組成物中,亦可進一步含有(C)絕緣粒子。(C)絕緣粒子未特別限定,可舉出例如:二氧化矽粒子或氧化鋁等無機填料、有機聚合物等有機填料。 Further, the resin composition of the present embodiment may further contain (C) insulating particles. (C) The insulating particles are not particularly limited, and examples thereof include an inorganic filler such as cerium oxide particles or alumina, and an organic filler such as an organic polymer.
(C)絕緣粒子較佳為能使含有(B)金屬粒子配列者,而在用於半導體用途之情形,更佳為粒徑一致者。又,(C)絕緣粒子若係用於對本實施形態的黏著層1賦予低熱膨張性、低吸濕率等,並將黏著層1硬化後的厚度保持在一定者更佳。 (C) The insulating particles are preferably ones which can contain (B) metal particles, and in the case of semiconductor use, more preferably have the same particle diameter. Further, (C) the insulating particles are preferably used for imparting low thermal expansion property, low moisture absorption rate, and the like to the adhesive layer 1 of the present embodiment, and it is more preferable to keep the thickness of the adhesive layer 1 after curing.
又,(C)絕緣粒子雖未特別限定,但較佳係以流場式顆粒影像分析儀測出的體積基準粒度分布之d95為10μm以下。樹脂組成物所包含的(C)絕緣粒子之d95若為10μm以下,則(C)絕緣粒子與(B)金屬粒子更難以沉降或凝集,作業性更為優良。 Further, the (C) insulating particles are not particularly limited, but it is preferable that the volume-based particle size distribution measured by the flow field type particle image analyzer has a d 95 of 10 μm or less. When the d 95 of the (C) insulating particles contained in the resin composition is 10 μm or less, the (C) insulating particles and the (B) metal particles are more difficult to settle or aggregate, and the workability is further improved.
又,(C)絕緣粒子的粒徑依必要的樹脂組成物黏度而不同,通常(C)絕緣粒子之以流場式顆粒影像分析儀測定出的體積基準粒度分布之中值粒徑d50較佳為2μm以上8μm以下,更佳為3μm以上7μm以下。在中值粒徑d50小於2μm 之情形,因黏度變高而較不佳。而若中值粒徑d50在2μm以上,則能以長軸對重力方向呈平行之方式來更有效率地配列(B)金屬粒子。 Further, (C) the particle size of the insulating particles differs depending on the viscosity of the resin composition required, and the median diameter d 50 of the volume-based particle size distribution of the (C) insulating particles measured by a flow field type particle image analyzer is generally It is preferably 2 μm or more and 8 μm or less, more preferably 3 μm or more and 7 μm or less. In the case where the median diameter d 50 is less than 2 μm, the viscosity is high and it is not preferable. On the other hand, when the median diameter d 50 is 2 μm or more, the (B) metal particles can be more efficiently arranged in such a manner that the long axis is parallel to the direction of gravity.
而若中值粒徑d50超過8μm則在塗布或硬化時因樹脂成分容易流出發生滲出而較不佳。而若中值粒徑d50為8μm以下,則能以使長軸對重力方向呈平行之方式來更有效率地配列(B)金屬粒子。 On the other hand, when the median diameter d 50 exceeds 8 μm, it is less preferable because the resin component is likely to flow out and bleed out during coating or hardening. On the other hand, when the median diameter d 50 is 8 μm or less, the (B) metal particles can be more efficiently arranged such that the long axis is parallel to the direction of gravity.
另外,對全部樹脂組成物100重量份,(C)絕緣粒子的調配量較佳為5重量份以上30重量份以下,在此範圍內可得到良好的導熱性與導電性,作業性亦優良。在樹脂組成物中的(C)絕緣粒子小於5重量份的情形,會有可能無法對(B)金屬粒子進行與重力方向與平行的配列,若超過30重量份則因樹脂組成物的黏度變高使得作業性降低,且樹脂組成物的硬化物變脆等,有可能使得耐焊性降低而較不佳。 In addition, the amount of the (C) insulating particles is preferably 5 parts by weight or more and 30 parts by weight or less based on 100 parts by weight of the total resin composition, and in this range, good thermal conductivity and electrical conductivity are obtained, and workability is also excellent. When the (C) insulating particles in the resin composition are less than 5 parts by weight, the (B) metal particles may not be aligned with the direction of gravity and parallel, and if more than 30 parts by weight, the viscosity of the resin composition may be changed. When the workability is lowered and the cured product of the resin composition becomes brittle, the solder resistance may be lowered to be less preferable.
無機填料具體來說可舉出:氮化鋁、碳酸鈣、二氧化矽、氧化鋁等。無機填料較佳係使列(B)金屬粒子配列者,而在作為半導體用途之場合,較佳為粒徑一致之物。此外,無機填料若能對黏著層1賦予低熱膨張性、低吸濕率等,並將黏著層1的厚度保持在一定者更佳。其中,特佳為二氧化矽或氧化鋁。 Specific examples of the inorganic filler include aluminum nitride, calcium carbonate, cerium oxide, and aluminum oxide. The inorganic filler is preferably one in which the column (B) metal particles are arranged, and in the case of use as a semiconductor, it is preferred that the particles have the same particle diameter. Further, if the inorganic filler can impart low thermal expansion property, low moisture absorption rate, etc. to the adhesive layer 1, it is more preferable to keep the thickness of the adhesive layer 1 constant. Among them, particularly preferred is cerium oxide or aluminum oxide.
有機填料具體來說可舉出:苯乙烯系、苯乙烯/異戊二烯系、苯乙烯/丙烯酸酯系、甲基丙烯酸甲酯系、丙烯酸乙酯系、丙烯酸系、甲基丙烯酸乙酯系、丙烯腈系、甲基丙烯酸酯系、二乙烯基苯系、正丁基丙烯酸酯系、耐綸系、矽氧系、胺酯系、三聚氰胺系、纖維素、乙醯纖維素、聚葡萄胺糖、丙烯酸酯橡膠/甲基丙烯酸酯系、乙烯系、乙烯/ 丙烯酸系、聚丙烯或苯胍嗪系、酚系、氟系、偏二氯乙烯等聚合物等。 Specific examples of the organic filler include styrene type, styrene/isoprene type, styrene/acrylate type, methyl methacrylate type, ethyl acrylate type, acrylic type, and ethyl methacrylate type. , acrylonitrile, methacrylate, divinylbenzene, n-butyl acrylate, nylon, oxime, amine ester, melamine, cellulose, acetamidine, polyglucamine Sugar, acrylate rubber / methacrylate, vinyl, ethylene / A polymer such as acrylic, polypropylene or benzoxazine, phenol, fluorine or vinylidene chloride.
有機填料較佳為可配列(B)金屬粒子之物,而在用作為半導體用途的場合,更佳為粒徑一致者。此外,有機填料若係能對黏著層1賦予低熱膨張性、低吸濕率等,並將黏著層1的厚度保持在一定者更佳。其中,特佳為以聚甲基丙烯酸甲酯為主成分之交聯有機聚合物。 The organic filler is preferably one which can be classified as (B) metal particles, and is preferably used in the case of semiconductor use. Further, it is more preferable that the organic filler imparts low thermal expansion property, low moisture absorption rate, and the like to the adhesive layer 1, and the thickness of the adhesive layer 1 is kept constant. Among them, a crosslinked organic polymer containing polymethyl methacrylate as a main component is particularly preferred.
本實施形態的樹脂組成物中,較佳更進一步含有環氧基矽烷、巰基矽烷、胺基矽烷、烷基矽烷、脲基矽烷、乙烯基矽烷等矽烷偶合劑、或鈦酸酯偶合劑、鋁偶合劑、鋁/鋯偶合劑等偶合劑。 The resin composition of the present embodiment preferably further contains a decane coupling agent such as an epoxy decane, a mercapto decane, an amino decane, an alkyl decane, a ureido quinane or a vinyl decane, or a titanate coupling agent or aluminum. A coupling agent such as a coupling agent or an aluminum/zirconium coupling agent.
本實施形態的樹脂組成物中,亦可依需要使用其它添加劑。其它添加劑可舉出碳黑等著色劑;矽油、矽膠等低應力化成分;水滑石等無機離子交換劑、消泡劑、界面活性劑、各種聚合抑制劑、抗氧化劑等,適當調配此等各種添加劑無妨。 In the resin composition of the present embodiment, other additives may be used as needed. Other additives include coloring agents such as carbon black; low-stress components such as eucalyptus oil and silicone rubber; inorganic ion exchangers such as hydrotalcite, antifoaming agents, surfactants, various polymerization inhibitors, and antioxidants; Additives are fine.
另外,本實施形態的樹脂組成物中,在不對作為硬化物時的(B)金屬粒子的配列產生影響的範圍內,能依需要添加有機化合物。可舉出例如:己烷、2-甲基戊烷、2,2-二甲基丁烷、2,3-二甲基丁烷、庚烷、辛烷、2,2,3-三甲基戊烷、異辛烷、壬烷、2,2,5-三甲基己烷、癸烷、1-己烯、1-庚烯、1-辛烯、1-壬烯、1-癸烯、乙苯、異丙苯、1,3,5-三甲苯、丁苯、對異丙甲苯、二乙苯、甲基環戊烷、環己烷、甲基環己烷、乙基環己烷、對薄荷烷、環己烯、α-蒎烯、雙戊烯、十氫萘、甲醇、乙醇、1-丙醇、2-丙醇、1-丁醇、2-丁醇、異丁醇、三級丁醇、1-戊醇、2-戊醇、 3-戊醇、2-甲基-1-丁醇、異戊醇、三級戊醇、3-甲基-2-丁醇、新戊醇、1-己醇、2-甲基-1-戊醇、4-甲基-2-戊醇、2-乙基-1-丁醇、1-庚醇、2-庚醇、3-庚醇、1-辛醇、2-辛醇、2-乙基-1-己醇、3,5,5-三甲基-1-己醇、環己醇、1-甲基環己醇、2-甲基環己醇、3-甲基環己醇、4-甲基環己醇、松香醇、1,2-乙二醇、1,2-丙二醇、1,2-丁二醇、2-甲基-2,4-戊二醇、二丙基醚、二異丙基醚、二丁基醚、苯甲醚、苯乙醚、甲氧基甲苯、苄基乙基醚、2-甲基呋喃、四氫呋喃、四氫吡喃、1,2-二甲氧基乙烷、1,2-二乙氧基乙烷、二乙二醇二甲醚、二乙二醇二乙醚、乙醛、丙酮、甲基乙基酮、2-戊酮、3-戊酮、2-己酮、甲基異丁基酮、2-庚酮、4-庚酮、二異丁基酮、丙酮基丙酮、異亞丙基丙酮、佛爾酮、環己酮、甲基環己酮、丙酸、丁酸、異丁酸、三甲基乙酸、戊酸、異戊酸、2-乙基丁酸、丙酸酐、丁酸酐、甲酸乙酯、甲酸丙酯、甲酸丁酯、甲酸異丁酯、甲酸、乙酸甲酯、乙酸乙酯、乙酸丙酯、乙酸異丙酯、乙酸丁酯、乙酸異丁酯、乙酸二級丁酯、乙酸戊酯、乙酸異戊酯、3-甲氧基丁乙酸酯、乙酸二級己酯、2-乙基丁乙酸酯、2-乙基己乙酸酯、乙酸環己酯、丙酸甲酯、丙酸乙酯、丙酸丁酯、丙酸異戊酯、丁酸甲酯、丁酸乙酯、丁酸丁酯、丁酸異戊酯、異丁酸異丁酯、2-羥基-2-甲基丙酸乙酯、異戊酸乙基、異戊酸異戊酯、安息香酸甲基、乙二酸二乙酯、丙二酸二乙酯、乙二醇單乙酸酯、二乙酸伸乙酯、單乙酸甘油酯、碳酸二乙酯、硝甲烷、硝乙烷、1-硝丙烷、2-硝丙烷、乙腈、丙腈、丁腈、異丁腈、戊腈、苯甲腈、二乙胺、三乙胺、二丙 胺、二異丙胺、二丁胺、二異丁胺、苯胺、N-甲基苯胺、N,N-二甲基苯胺、吡咯、哌啶、吡啶、α-甲吡啶、β-甲吡啶、γ-甲吡啶、2,4-二甲吡啶、2,6-二甲吡啶、N-甲基甲醯胺、N,N-二甲基甲醯胺、N,N-二乙基甲醯胺、N,N-二甲基乙醯胺、二甲基亞碸、2-甲氧基甲醇、2-乙氧基甲醇、2-(甲氧基甲氧基)乙醇、2-異丙氧基乙醇、2-丁氧基乙醇、2-(戊氧基)乙醇、糠醇、四氫糠醇、二乙二醇單甲基醚、1-甲氧基-2-丙醇、1-乙氧基-2-丙醇、二丙二醇單甲基醚、二丙二醇單乙基醚、二丙酮醇、2-(二甲胺基)乙醇、2-(二乙胺基)乙醇、嗎啉、N-乙基嗎啉、乳酸甲酯、乳酸乙酯、乳酸丁酯、乳酸戊酯、乙酸2-甲氧基乙酯、乙酸2-乙氧基乙酯、乙酸2-丁氧基乙酯、乙醯乙酸甲酯、乙醯乙酸乙酯等。能不特別限定於利用彼等,亦能併用2種以上。 In addition, in the resin composition of the present embodiment, an organic compound can be added as needed within a range that does not affect the arrangement of the (B) metal particles when the cured product is used. For example, hexane, 2-methylpentane, 2,2-dimethylbutane, 2,3-dimethylbutane, heptane, octane, 2,2,3-trimethyl Pentane, isooctane, decane, 2,2,5-trimethylhexane, decane, 1-hexene, 1-heptene, 1-octene, 1-decene, 1-decene, Ethylbenzene, cumene, 1,3,5-trimethylbenzene, butylbenzene, p-isopropylbenzene, diethylbenzene, methylcyclopentane, cyclohexane, methylcyclohexane, ethylcyclohexane, Pentane, cyclohexene, α-pinene, dipentene, decahydronaphthalene, methanol, ethanol, 1-propanol, 2-propanol, 1-butanol, 2-butanol, isobutanol, three Butanol, 1-pentanol, 2-pentanol, 3-pentanol, 2-methyl-1-butanol, isoamyl alcohol, tertiary pentanol, 3-methyl-2-butanol, neopentyl alcohol, 1-hexanol, 2-methyl-1- Pentanol, 4-methyl-2-pentanol, 2-ethyl-1-butanol, 1-heptanol, 2-heptanol, 3-heptanol, 1-octanol, 2-octanol, 2- Ethyl-1-hexanol, 3,5,5-trimethyl-1-hexanol, cyclohexanol, 1-methylcyclohexanol, 2-methylcyclohexanol, 3-methylcyclohexanol , 4-methylcyclohexanol, rosin alcohol, 1,2-ethanediol, 1,2-propanediol, 1,2-butanediol, 2-methyl-2,4-pentanediol, dipropyl Ether, diisopropyl ether, dibutyl ether, anisole, phenethyl ether, methoxytoluene, benzyl ethyl ether, 2-methylfuran, tetrahydrofuran, tetrahydropyran, 1,2-dimethyl Oxyethane, 1,2-diethoxyethane, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, acetaldehyde, acetone, methyl ethyl ketone, 2-pentanone, 3-pentyl Ketone, 2-hexanone, methyl isobutyl ketone, 2-heptanone, 4-heptanone, diisobutyl ketone, acetone acetonide, isopropylidene acetonide, phorone, cyclohexanone, methyl Cyclohexanone, propionic acid, butyric acid, isobutyric acid, trimethylacetic acid, valeric acid, isovaleric acid, 2-ethylbutyric acid, propionic anhydride Butyric anhydride, ethyl formate, propyl formate, butyl formate, isobutyl formate, formic acid, methyl acetate, ethyl acetate, propyl acetate, isopropyl acetate, butyl acetate, isobutyl acetate, acetic acid Butyl butyl ester, amyl acetate, isoamyl acetate, 3-methoxybutyl acetate, secondary hexyl acetate, 2-ethylbutyl acetate, 2-ethylhexyl acetate, acetic acid cyclohexane Ester, methyl propionate, ethyl propionate, butyl propionate, isoamyl propionate, methyl butyrate, ethyl butyrate, butyl butyrate, isoamyl butyrate, isobutyl isobutyrate , 2-hydroxy-2-methylpropionic acid ethyl ester, isovaleric acid ethyl, isoamyl isovalerate, benzoic acid methyl, diethyl oxalate, diethyl malonate, ethylene glycol Acetate, ethyl diacetate, monoacetin, diethyl carbonate, methyl nitrate, nitrate, 1-nitropropane, 2-nitropropane, acetonitrile, propionitrile, butyronitrile, isobutyronitrile, pentane Nitrile, benzonitrile, diethylamine, triethylamine, dipropyl Amine, diisopropylamine, dibutylamine, diisobutylamine, aniline, N-methylaniline, N,N-dimethylaniline, pyrrole, piperidine, pyridine, α-methylpyridine, β-methylpyridine, γ -methylpyridine, 2,4-dimethylpyridine, 2,6-dimethylpyridine, N-methylformamide, N,N-dimethylformamide, N,N-diethylformamide, N,N-dimethylacetamide, dimethyl hydrazine, 2-methoxymethanol, 2-ethoxymethanol, 2-(methoxymethoxy)ethanol, 2-isopropoxyethanol , 2-butoxyethanol, 2-(pentyloxy)ethanol, decyl alcohol, tetrahydrofurfuryl alcohol, diethylene glycol monomethyl ether, 1-methoxy-2-propanol, 1-ethoxy-2 -propanol, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, diacetone alcohol, 2-(dimethylamino)ethanol, 2-(diethylamino)ethanol, morpholine, N-ethyl? Porphyrin, methyl lactate, ethyl lactate, butyl lactate, amyl lactate, 2-methoxyethyl acetate, 2-ethoxyethyl acetate, 2-butoxyethyl acetate, methyl acetate Ethyl acetate and the like. It is possible to use two or more types in combination, and it is not limited to the use of them.
本實施形態的樹脂組成物,可藉由例如將各成分予備混合後,使用3支輥混練後,在真空下消泡來製造。 The resin composition of the present embodiment can be produced, for example, by mixing each component and then kneading it under vacuum using three rolls.
樹脂組成物的黏度較佳為1Pa‧s以上100Pa‧s以下。無論是比它低還是比它高,因在塗布後都無法得到厚度良好的黏著劑層而不適合。此處,黏度值係使用E型黏度計(東機產業社製、3°錐(cone)),在25℃下、以2.5rpm測定之值。更佳的黏度範圍係2Pa‧s以上90Pa‧s以下,尤佳者係在2Pa‧s以上80Pa‧s以下。 The viscosity of the resin composition is preferably 1 Pa ‧ or more and 100 Pa ‧ or less. Whether it is lower or higher than it is not suitable because a good thickness of the adhesive layer cannot be obtained after coating. Here, the viscosity value was measured at 2.5 rpm at 25 ° C using an E-type viscometer (manufactured by Toki Sangyo Co., Ltd., 3° cone). A better viscosity range is below 2 Pa‧s and above 90 Pa‧s, and more preferably below 2 Pa‧s and above 80 Pa‧s.
而在將樹脂組成物放置於25℃下24小時前後的黏度變化率,較佳為100%以下。若黏度變化率超過100%,則在將樹脂組成物塗布於基材2或半導體元件3時,會有作業性或塗布後的厚度精度產生問題的情形。而在25℃下放 置24小時,具體來說,係將5g樹脂組成物置於玻璃板上,以刮勺將其伸展為100μm厚,在25℃下放置24小時。 On the other hand, the viscosity change rate before and after the resin composition is placed at 25 ° C for 24 hours is preferably 100% or less. If the viscosity change rate exceeds 100% When the resin composition is applied to the substrate 2 or the semiconductor element 3, there is a problem that workability or thickness accuracy after coating may occur. While standing at 25 ° C for 24 hours, specifically, 5 g of the resin composition was placed on a glass plate, which was spread to a thickness of 100 μm with a spatula, and left at 25 ° C for 24 hours.
(半導體裝置) (semiconductor device)
接下來,說明本實施形態中使用樹脂組成物製作之半導體裝置。圖1為顯示本實施形態之半導體裝置10的構成之截面圖。 Next, a semiconductor device produced by using a resin composition in the present embodiment will be described. Fig. 1 is a cross-sectional view showing the configuration of a semiconductor device 10 of the present embodiment.
本實施形態中,半導體裝置10係具備基材2、半導體元件3、及夾在基材2與半導體元件3之間,用以黏著兩者的黏著層1。 In the present embodiment, the semiconductor device 10 includes a substrate 2, a semiconductor element 3, and an adhesive layer 1 interposed between the substrate 2 and the semiconductor element 3 to adhere the both.
黏著層1係透過將本實施形態之樹脂組成物塗布於半導體元件或基材,再壓接半導體元件3與基材2所形成。 The adhesive layer 1 is formed by applying the resin composition of the present embodiment to a semiconductor element or a substrate, and then crimping the semiconductor element 3 and the substrate 2.
黏著層1的厚度無特別限定,較佳為2μm以上100μm以下,更佳為2μm以上30μm以下。藉由在下限值以上,能更進一步發揮黏著強度。而藉由在上限值以下,則能更進一步提升導電性與導熱性。 The thickness of the adhesive layer 1 is not particularly limited, but is preferably 2 μm or more and 100 μm or less, and more preferably 2 μm or more and 30 μm or less. By being at least the lower limit value, the adhesion strength can be further exhibited. On the other hand, if it is at most the upper limit value, the conductivity and thermal conductivity can be further improved.
基材2雖未特別限定,但可舉出42合金導線架、銅導線架等導線架、散熱片、散熱器等放熱構件、玻璃環氧基板(由玻璃纖維強化環氧樹脂所構成之基板)、BT基板(由氰酸酯單體及其寡聚物與雙馬來亞醯胺所構成之使用BT樹脂之基板)等有機基板、其它半導體元件、半導體晶圓、間隔物等。此等之中,較佳為能進一步有效發揮黏著層1的導電性與導熱性之導線架、散熱片或有機基板。更進一步,有機基板較佳為BGA(Ball Grid Array,球閘陣列)基板。 The base material 2 is not particularly limited, and examples thereof include a 42-aluminum lead frame, a lead frame such as a copper lead frame, a heat radiating member such as a heat sink and a heat sink, and a glass epoxy substrate (a substrate made of a glass fiber reinforced epoxy resin). An organic substrate such as a BT substrate (a substrate using a BT resin composed of a cyanate monomer and an oligomer thereof and bismaleimide), another semiconductor element, a semiconductor wafer, a spacer, or the like. Among these, a lead frame, a heat sink or an organic substrate which can further effectively exhibit the conductivity and thermal conductivity of the adhesive layer 1 is preferable. Furthermore, the organic substrate is preferably a BGA (Ball Grid Array) substrate.
半導體元件3係透過墊7與接合引線6(bonding wire)電性連接至引腳4。而半導體元件3其周圍係以密封材料層5密封。 The semiconductor element 3 is electrically connected to the lead 4 through the pad 7 and the bonding wire 6 . On the other hand, the semiconductor element 3 is sealed by a sealing material layer 5 around it.
以過去的樹脂組成物,特別是在黏著晶片寬度小的半導體元件之情形,因難以塗布適量的樹脂組成物,而會有造成樹脂組成物自半導體元件溢出的情形。 In the case of the conventional resin composition, particularly in the case of a semiconductor element having a small adhesive wafer width, it is difficult to apply an appropriate amount of the resin composition, and the resin composition may overflow from the semiconductor element.
本實施形態的樹脂組成物因黏度變化小、作業性優良,而適合黏著晶片寬度小的半導體元件。因此,半導體元件3雖未特別限定,但較佳為發光二極體元件或半導體雷射元件等晶片寬度在2μm以下的半導體元件。 The resin composition of the present embodiment is suitable for adhering a semiconductor element having a small wafer width because of a small change in viscosity and excellent workability. Therefore, the semiconductor element 3 is not particularly limited, but is preferably a semiconductor element having a wafer width of 2 μm or less, such as a light-emitting diode element or a semiconductor laser element.
(使用樹脂組成物製造半導體裝置之方法) (Method of manufacturing a semiconductor device using a resin composition)
本實施形態中使用樹脂組成物製作半導體裝置10之方法未特別限制,可使用眾人皆知的方法。例如,使用市售的固晶機(die bonder),將樹脂組成物點著或壓印塗布在基材2的特定部位後,壓接基材2與半導體元件3,再加熱硬化形成黏著層1。 The method for producing the semiconductor device 10 using the resin composition in the present embodiment is not particularly limited, and a well-known method can be used. For example, after a resin bond is applied or embossed to a specific portion of the substrate 2 using a commercially available die bonder, the substrate 2 and the semiconductor element 3 are crimped, and then heat-hardened to form an adhesive layer 1 .
然後打線接合,經由使用環氧樹脂形成密封材料層5,來製作半導體裝置10。或可採用覆晶接合後以底部填充材密封之覆晶BGA(球閘陣列)等,將樹脂組成物點著或壓印塗布在半導體晶片內面,搭載散熱器、引腳等放熱零件,再加熱硬化等方法。 Then, wire bonding is performed, and the sealing device layer 5 is formed by using an epoxy resin to fabricate the semiconductor device 10. Alternatively, a flip-chip BGA (ball gate array) sealed with an underfill material after flip chip bonding may be used, and the resin composition may be applied or embossed on the inner surface of the semiconductor wafer, and a heat-dissipating component such as a heat sink or a lead may be mounted. Heat hardening and other methods.
此處,點著係指以樹脂組成物填滿固晶機的圓筒內後,透過以活塞或以空氣壓等擠出該樹脂組成物,將樹脂組成物定量吐出在基材2或半導體元件3中至少一者之表面的特定位置(黏著面)來塗布之方法。 Here, the point is that after the resin composition is filled in the cylinder of the die bonder, the resin composition is quantitatively discharged onto the substrate 2 or the semiconductor element by extruding the resin composition by a piston or by air pressure or the like. A method of coating a specific position (adhesive surface) of at least one of the surfaces of the three.
而壓印係指將轉印銷(transfer pin)的前端壓至樹脂組成物,將附著了該樹脂組成物的轉印銷之前端移動至基材2或半導體元件3中至少一者之表面的特定位置正上方後,經由將轉印銷壓至基材2或半導體元件3中至少一者的黏 著面上,來塗布樹脂組成物之方法。 The embossing means pressing the front end of the transfer pin to the resin composition, and moving the front end of the transfer pin to which the resin composition is attached to the surface of at least one of the substrate 2 or the semiconductor element 3. Immediately above a specific position, via adhesion of at least one of the substrate 2 or the semiconductor element 3 to the transfer pin A method of coating a resin composition on the surface.
又,在黏著晶片寬度為2μm以下之半導體元件的情形,較佳以用極細針管的點著或壓印來塗布樹脂組成物。因本實施形態中樹脂組成物的黏度變化小、作業性優良,而能藉由極細針管的點著或壓印,將少量樹脂組成物以精確的厚度塗布於基材上。 Further, in the case of bonding a semiconductor element having a wafer width of 2 μm or less, it is preferable to apply a resin composition by spotting or imprinting with a very thin needle tube. In the present embodiment, the resin composition has a small change in viscosity and excellent workability, and a small amount of the resin composition can be applied to the substrate with a precise thickness by spotting or imprinting of the ultrafine needle tube.
以下展示關於本實施形態之具體實施例,但不受其限定。本實施例中,樹脂組成物的各成分係使用以下物質。 Specific embodiments of the present embodiment are shown below, but are not limited thereto. In the present embodiment, the following components were used for each component of the resin composition.
1.熱硬化性樹脂 Thermosetting resin
環氧樹脂A:雙酚F型環氧樹脂(日本化藥公司製,RE-303S) Epoxy Resin A: Bisphenol F-type epoxy resin (manufactured by Nippon Kayaku Co., Ltd., RE-303S)
環氧樹脂B:間、對-甲苯酚基縮水甘油基醚(阪本藥品工業公司製,CGE,環氧基當量165) Epoxy resin B: m-p-cresol glycidyl ether (manufactured by Sakamoto Pharmaceutical Co., Ltd., CGE, epoxy equivalent 165)
丙烯酸樹脂A(丙烯酸酯A):二丙烯酸酯(共榮社化學公司製,LIGHT ESTER 4EG) Acrylic resin A (acrylate A): diacrylate (manufactured by Kyoeisha Chemical Co., Ltd., LIGHT ESTER 4EG)
丙烯酸樹脂B(丙烯酸酯B):含有羥基之丙烯酸酯(日本化成公司製,CHDMMA) Acrylic resin B (acrylate B): hydroxy group-containing acrylate (CHDMMA, manufactured by Nippon Kasei Co., Ltd.)
丙烯酸樹脂C(丙烯酸酯C):含有羧基之丙烯酸酯(共榮社化學公司製,LIGHT ESTER HOMS) Acrylic resin C (acrylate C): acrylate containing carboxyl group (LIGHT ESTER HOMS, manufactured by Kyoeisha Chemical Co., Ltd.)
丙烯酸樹脂D(丙烯酸酯D):三丙烯酸酯(共榮社化學公司製,LIGHT ESTER TMP) Acrylic resin D (Acrylate D): Triacrylate (LIGHT ESTER TMP, manufactured by Kyoeisha Chemical Co., Ltd.)
順丁烯二醯亞胺樹脂(順丁烯二醯亞胺化合物):順丁烯二醯亞胺化合物(大日本油墨化學工業公司製,MIA-200) Maleimide resin (m-butylene imine compound): maleimide compound (manufactured by Dainippon Ink and Chemicals, MIA-200)
烯丙酯樹脂(烯丙酯化合物):烯丙酯化合物(昭和電工公司製,DA101) Allyl ester resin (allyl ester compound): allyl ester compound (DA101, manufactured by Showa Denko)
2.添加劑 2. Additives
硬化劑A(環氧基硬化劑A):雙酚F(大日本油墨化學工業公司製,BPF,羥基當量100) Hardener A (epoxy hardener A): bisphenol F (manufactured by Dainippon Ink and Chemicals, BPF, hydroxyl equivalent 100)
硬化劑B(環氧基硬化劑B):雙氰胺(ADEKA公司製,DDA) Hardener B (epoxy hardener B): dicyandiamide (DDA, manufactured by ADEKA)
硬化觸媒(環氧基觸媒A):2-苯基-4-甲基-5-羥甲基咪唑(四國化成工業公司製,CURESOL 2P4MHZ) Hardening Catalyst (Epoxy Catalyst A): 2-Phenyl-4-methyl-5-hydroxymethylimidazole (CURESOL 2P4MHZ, manufactured by Shikoku Chemical Industries, Ltd.)
偶合劑A:環氧基矽烷(信越化學公司製,KBM-403E) Coupler A: Epoxy decane (manufactured by Shin-Etsu Chemical Co., Ltd., KBM-403E)
偶合劑B:四硫化雙(三甲氧基矽烷基丙基)(DAISO公司製,CABRUS 4) Coupler B: bis(trimethoxydecylpropyl) tetrasulfide (manufactured by DAISO, CABRUS 4)
偶合劑C:乙烯基矽烷偶合劑(信越化學公司製,KBM-503P) Coupling agent C: Vinyl decane coupling agent (manufactured by Shin-Etsu Chemical Co., Ltd., KBM-503P)
聚合起始劑(過氧化物):過氧化物(化藥AKZO公司製,Perkadox BC) Polymerization initiator (peroxide): peroxide (chemical compound AKZO, Perkadox BC)
3.金屬粒子 3. Metal particles
鱗片狀銀粒子A(片狀銀粉A):(福田金屬箔粉工業公司製,Agc-TC6,d50:14.0μm,d95:23.0μm,10μm<13%) Flaky silver particle A (flaky silver powder A): (Fukuda Metal Foil Powder Co., Ltd., Agc-TC6, d 50 : 14.0 μm, d 95 : 23.0 μm, 10 μm < 13%)
鱗片狀銀粒子B(片狀銀粉B):(Ferro公司製,SF-78,d50:9.5μm,d95:14.0μm,10μm<54%) Scale-like silver particles B (flaky silver powder B): (Ferro, SF-78, d 50 : 9.5 μm, d 95 : 14.0 μm, 10 μm < 54%)
鱗片狀銀粒子C(片狀銀粉C):(Ferro公司製,SF-65,d50:4.0μm,d95:13.0μm,10μm<12%) Scale-like silver particles C (flaky silver powder C): (Ferro, SF-65, d 50 : 4.0 μm, d 95 : 13.0 μm, 10 μm < 12%)
鱗片狀銀粒子D(片狀銀粉D):(福田金屬箔粉工業公司製,Agc-2611,d50:3.7μm,d95:8.5μm,10μm<5%) Scale-like silver particles D (flaky silver powder D): (Fukuda Metal Foil Powder Co., Ltd., Agc-2611, d 50 : 3.7 μm, d 95 : 8.5 μm, 10 μm < 5%)
鱗片狀銀粒子E(片狀銀粉E):(DOWA ELECTRONICS公司製,FA-S-6,d50:2.2μm,d95:6.0μm,10μm<0%) Scale-like silver particles E (flaky silver powder E): (manufactured by DOWA ELECTRONICS, FA-S-6, d 50 : 2.2 μm, d 95 : 6.0 μm, 10 μm < 0%)
球狀銀粒子A(球狀銀粉A):(DOWA ELECTRONICS 公司製,AG2-1C,d50:1.7μm,d95:3.6μm,10μm<0%) Spherical silver particle A (spherical silver powder A): (manufactured by DOWA ELECTRONICS, AG2-1C, d 50 : 1.7 μm, d 95 : 3.6 μm, 10 μm < 0%)
4.絕緣粒子 4. Insulating particles
交聯PMMA-1:(Art-pearl GR-800,10μm<7%) Crosslinked PMMA-1: (Art-pearl GR-800, 10μm<7%)
交聯PMMA-2:(Art-pearl SE-006T,10μm<4%) Crosslinked PMMA-2: (Art-pearl SE-006T, 10μm<4%)
交聯PMMA-3:(Art-pearl J-7P,10μm<0%) Crosslinked PMMA-3: (Art-pearl J-7P, 10μm<0%)
此處,10μm<X%的X,係表示粒徑超過10μm之金屬粒子或絕緣粒子的體積比例。 Here, X of 10 μm < X% means a volume ratio of metal particles or insulating particles having a particle diameter of more than 10 μm.
而粒徑係使用HOSOKAWA MICRON公司製的流場式顆粒影像分析儀FPIA-3000,用以下條件測定。 The particle size was measured using the flow field type particle image analyzer FPIA-3000 manufactured by HOSOKAWA MICRON Co., Ltd. under the following conditions.
測定模式:HPF Measurement mode: HPF
定量計數 Quantitative counting
物鏡:20倍 Objective lens: 20 times
光學系統:亮視野 Optical system: bright field of view
溫度:室溫 Temperature: room temperature
壓力:0.22MPa Pressure: 0.22MPa
〔實施例1~13、比較例1~3〕 [Examples 1 to 13 and Comparative Examples 1 to 3]
以表1之比例調配上述成分,藉由使用3支輥混練,於真空室以2mmHg消泡15分鐘後消泡,來分別製作樹脂組成物。調配比例為重量份。 The above components were blended in the proportions shown in Table 1, and the resin composition was separately prepared by kneading in a vacuum chamber at 2 mmHg for 15 minutes by kneading using three rolls. The blending ratio is parts by weight.
(評價試驗) (evaluation test)
對經由上述所得到的樹脂組成物,分別進行以下評價試驗。評價結果示於表1。 The following evaluation tests were carried out on the resin compositions obtained above. The evaluation results are shown in Table 1.
(黏度) (viscosity)
係於上述樹脂組成物製作後當下,使用E型黏度計(3°錐)在25℃、以2.5rpm所測定之值。然後在所製作之樹脂組成物於25℃放置24小時後,同樣在25℃、以2.5rpm測 定出值,再以下記式(1),計算出24小時後的黏度變化率。又,在25℃下放置24小時,具體來說,係將5g樹脂組成物置於玻璃板上,以刮勺伸展為100μm厚,在25℃下放置24小時。 After the preparation of the above resin composition, the value measured at 2.5 rpm at 25 ° C using an E-type viscometer (3 ° cone) was used. Then, after the prepared resin composition was allowed to stand at 25 ° C for 24 hours, it was also measured at 25 ° C and 2.5 rpm. The value is determined, and the viscosity change rate after 24 hours is calculated by the following formula (1). Further, it was allowed to stand at 25 ° C for 24 hours. Specifically, 5 g of the resin composition was placed on a glass plate, stretched to a thickness of 100 μm with a spatula, and left at 25 ° C for 24 hours.
放置24小時後的黏度變化率[%]=100×(放置24小時後的黏度-製作後當下的黏度)/(製作後當下的黏度) (1) Viscosity change rate after standing for 24 hours [%] = 100 × (viscosity after standing for 24 hours - current viscosity after production) / (current viscosity after production) (1)
(吐出性) (spit sex)
使用噴嘴徑為內徑100μm之極細針管與點膠機,評價吐出樹脂組成物時的作業性。各符號係如下述。 An extremely fine needle having a nozzle diameter of 100 μm and a dispenser were used to evaluate the workability when the resin composition was discharged. Each symbol is as follows.
OK:樹脂組成物的吐出速度與塗抹都沒問題。 OK: The discharge rate and application of the resin composition are no problem.
NG:無法吐出樹脂組成物。 NG: The resin composition could not be discharged.
由表1可清楚知道,實施例1~13的樹脂組成物黏度變化率小、吐出性良好,有優良的作業性。且此等樹脂組成物在對晶片寬度2μm以下的半導體元件作晶粒黏著時的作業性同樣優異。 As is clear from Table 1, the resin compositions of Examples 1 to 13 have a small change rate of viscosity, good discharge property, and excellent workability. Further, these resin compositions are also excellent in workability when the semiconductor element having a wafer width of 2 μm or less is subjected to die adhesion.
若依據本發明,因可提供作業性優異的樹脂組成物,故本發明在產業上極為有用。 According to the present invention, since the resin composition excellent in workability can be provided, the present invention is extremely useful industrially.
1‧‧‧黏著層 1‧‧‧Adhesive layer
2‧‧‧基材 2‧‧‧Substrate
3‧‧‧半導體元件 3‧‧‧Semiconductor components
4‧‧‧引腳 4‧‧‧ pin
5‧‧‧密封材料層 5‧‧‧Sealing material layer
6‧‧‧接合引線 6‧‧‧bonding leads
7‧‧‧墊 7‧‧‧ pads
10‧‧‧半導體裝置 10‧‧‧Semiconductor device
圖1為顯示本實施形態之半導體裝置構成之截面圖。 Fig. 1 is a cross-sectional view showing the configuration of a semiconductor device of the embodiment.
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JP2014192328A (en) * | 2013-03-27 | 2014-10-06 | Kyocera Chemical Corp | Optical semiconductor device |
US9583689B2 (en) * | 2013-07-12 | 2017-02-28 | Lite-On Opto Technology (Changzhou) Co., Ltd. | LED package |
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- 2012-05-28 SG SG2013082763A patent/SG194849A1/en unknown
- 2012-05-28 CN CN201280026092.XA patent/CN103563063B/en active Active
- 2012-05-28 KR KR1020137030823A patent/KR101903819B1/en active IP Right Grant
- 2012-05-28 SG SG10201604299YA patent/SG10201604299YA/en unknown
- 2012-05-28 WO PCT/JP2012/063631 patent/WO2012165375A1/en active Application Filing
- 2012-05-28 JP JP2013518077A patent/JPWO2012165375A1/en active Pending
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Also Published As
Publication number | Publication date |
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TW201247816A (en) | 2012-12-01 |
EP2717304A4 (en) | 2015-05-06 |
JPWO2012165375A1 (en) | 2015-02-23 |
KR101903819B1 (en) | 2018-10-02 |
CN103563063A (en) | 2014-02-05 |
KR20140030203A (en) | 2014-03-11 |
WO2012165375A1 (en) | 2012-12-06 |
SG194849A1 (en) | 2013-12-30 |
CN103563063B (en) | 2017-11-14 |
US20140341242A1 (en) | 2014-11-20 |
SG10201604299YA (en) | 2016-07-28 |
EP2717304A1 (en) | 2014-04-09 |
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