WO2016052664A1 - Resin composition - Google Patents
Resin composition Download PDFInfo
- Publication number
- WO2016052664A1 WO2016052664A1 PCT/JP2015/077852 JP2015077852W WO2016052664A1 WO 2016052664 A1 WO2016052664 A1 WO 2016052664A1 JP 2015077852 W JP2015077852 W JP 2015077852W WO 2016052664 A1 WO2016052664 A1 WO 2016052664A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- resin composition
- meth
- composition according
- acid
- acrylate
- Prior art date
Links
- 239000011342 resin composition Substances 0.000 title claims abstract description 110
- 229920005989 resin Polymers 0.000 claims abstract description 33
- 239000011347 resin Substances 0.000 claims abstract description 33
- 150000003568 thioethers Chemical class 0.000 claims abstract description 32
- 239000000945 filler Substances 0.000 claims abstract description 28
- 239000000853 adhesive Substances 0.000 claims abstract description 25
- 230000001070 adhesive effect Effects 0.000 claims abstract description 24
- 239000004065 semiconductor Substances 0.000 claims abstract description 23
- 239000004020 conductor Substances 0.000 claims abstract description 18
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 18
- 239000011162 core material Substances 0.000 claims abstract description 15
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 13
- 239000002245 particle Substances 0.000 claims description 46
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 35
- 229910052802 copper Inorganic materials 0.000 claims description 35
- 239000010949 copper Substances 0.000 claims description 35
- 150000007524 organic acids Chemical class 0.000 claims description 31
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- 238000009835 boiling Methods 0.000 claims description 21
- 239000000126 substance Substances 0.000 claims description 18
- 229910044991 metal oxide Inorganic materials 0.000 claims description 17
- 150000004706 metal oxides Chemical class 0.000 claims description 17
- 239000002923 metal particle Substances 0.000 claims description 17
- 150000003839 salts Chemical class 0.000 claims description 16
- 229910045601 alloy Inorganic materials 0.000 claims description 15
- 239000000956 alloy Substances 0.000 claims description 15
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 14
- JBDSSBMEKXHSJF-UHFFFAOYSA-N cyclopentanecarboxylic acid Chemical compound OC(=O)C1CCCC1 JBDSSBMEKXHSJF-UHFFFAOYSA-N 0.000 claims description 14
- 239000011701 zinc Substances 0.000 claims description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 12
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical class [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 12
- 229910052709 silver Inorganic materials 0.000 claims description 12
- 239000004332 silver Substances 0.000 claims description 12
- 229910052725 zinc Inorganic materials 0.000 claims description 12
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 10
- 239000010941 cobalt Substances 0.000 claims description 10
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 10
- 229910052718 tin Inorganic materials 0.000 claims description 10
- OBETXYAYXDNJHR-SSDOTTSWSA-M (2r)-2-ethylhexanoate Chemical compound CCCC[C@@H](CC)C([O-])=O OBETXYAYXDNJHR-SSDOTTSWSA-M 0.000 claims description 9
- HNNQYHFROJDYHQ-UHFFFAOYSA-N 3-(4-ethylcyclohexyl)propanoic acid 3-(3-ethylcyclopentyl)propanoic acid Chemical compound CCC1CCC(CCC(O)=O)C1.CCC1CCC(CCC(O)=O)CC1 HNNQYHFROJDYHQ-UHFFFAOYSA-N 0.000 claims description 9
- OBETXYAYXDNJHR-UHFFFAOYSA-N alpha-ethylcaproic acid Natural products CCCCC(CC)C(O)=O OBETXYAYXDNJHR-UHFFFAOYSA-N 0.000 claims description 9
- 229910017052 cobalt Inorganic materials 0.000 claims description 9
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 6
- 239000011777 magnesium Substances 0.000 claims description 6
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229910052749 magnesium Inorganic materials 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910052763 palladium Inorganic materials 0.000 claims description 5
- 239000011135 tin Substances 0.000 claims description 5
- 150000001868 cobalt Chemical class 0.000 claims description 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 4
- 150000005690 diesters Chemical group 0.000 claims description 3
- 159000000003 magnesium salts Chemical class 0.000 claims description 3
- 150000002696 manganese Chemical class 0.000 claims description 3
- 150000002815 nickel Chemical class 0.000 claims description 3
- 150000003751 zinc Chemical class 0.000 claims description 3
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 claims description 2
- 229910021626 Tin(II) chloride Inorganic materials 0.000 claims description 2
- 230000017525 heat dissipation Effects 0.000 claims description 2
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical class CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 20
- 230000008569 process Effects 0.000 abstract description 16
- 239000000463 material Substances 0.000 abstract description 7
- 230000005855 radiation Effects 0.000 abstract description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 74
- -1 aromatic glycidyl ethers Chemical class 0.000 description 39
- 239000000047 product Substances 0.000 description 32
- 238000001723 curing Methods 0.000 description 23
- 150000001875 compounds Chemical class 0.000 description 21
- 239000003822 epoxy resin Substances 0.000 description 21
- 229920000647 polyepoxide Polymers 0.000 description 21
- 239000004925 Acrylic resin Substances 0.000 description 13
- 229920000178 Acrylic resin Polymers 0.000 description 13
- 230000006866 deterioration Effects 0.000 description 12
- 239000000758 substrate Substances 0.000 description 11
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 10
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 10
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Substances C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 8
- 239000000203 mixture Substances 0.000 description 7
- 229910000679 solder Inorganic materials 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 7
- PEEHTFAAVSWFBL-UHFFFAOYSA-N Maleimide Chemical compound O=C1NC(=O)C=C1 PEEHTFAAVSWFBL-UHFFFAOYSA-N 0.000 description 6
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical class C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 6
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 229920005862 polyol Polymers 0.000 description 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 229920003986 novolac Polymers 0.000 description 5
- 229920001515 polyalkylene glycol Polymers 0.000 description 5
- 150000003077 polyols Chemical class 0.000 description 5
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 4
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 4
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 4
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 description 4
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 4
- 239000003963 antioxidant agent Substances 0.000 description 4
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 4
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 4
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 229920000768 polyamine Polymers 0.000 description 4
- 229920006395 saturated elastomer Polymers 0.000 description 4
- 230000008719 thickening Effects 0.000 description 4
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 3
- UDFARPRXWMDFQU-UHFFFAOYSA-N 2,6-ditert-butyl-4-[(3,5-ditert-butyl-4-hydroxyphenyl)methylsulfanylmethyl]phenol Chemical compound CC(C)(C)C1=C(O)C(C(C)(C)C)=CC(CSCC=2C=C(C(O)=C(C=2)C(C)(C)C)C(C)(C)C)=C1 UDFARPRXWMDFQU-UHFFFAOYSA-N 0.000 description 3
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 3
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 description 3
- QAEKNCDIHIGLFI-UHFFFAOYSA-L cobalt(2+);2-ethylhexanoate Chemical compound [Co+2].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O QAEKNCDIHIGLFI-UHFFFAOYSA-L 0.000 description 3
- 229930003836 cresol Natural products 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- PWWSSIYVTQUJQQ-UHFFFAOYSA-N distearyl thiodipropionate Chemical compound CCCCCCCCCCCCCCCCCCOC(=O)CCSCCC(=O)OCCCCCCCCCCCCCCCCCC PWWSSIYVTQUJQQ-UHFFFAOYSA-N 0.000 description 3
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 150000002460 imidazoles Chemical class 0.000 description 3
- 238000007561 laser diffraction method Methods 0.000 description 3
- 125000005439 maleimidyl group Chemical group C1(C=CC(N1*)=O)=O 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- GEMHFKXPOCTAIP-UHFFFAOYSA-N n,n-dimethyl-n'-phenylcarbamimidoyl chloride Chemical compound CN(C)C(Cl)=NC1=CC=CC=C1 GEMHFKXPOCTAIP-UHFFFAOYSA-N 0.000 description 3
- 235000005985 organic acids Nutrition 0.000 description 3
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 3
- 229920000193 polymethacrylate Polymers 0.000 description 3
- 239000007870 radical polymerization initiator Substances 0.000 description 3
- 238000005486 sulfidation Methods 0.000 description 3
- 238000005987 sulfurization reaction Methods 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- IFNXAMCERSVZCV-UHFFFAOYSA-L zinc;2-ethylhexanoate Chemical compound [Zn+2].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O IFNXAMCERSVZCV-UHFFFAOYSA-L 0.000 description 3
- NOBYOEQUFMGXBP-UHFFFAOYSA-N (4-tert-butylcyclohexyl) (4-tert-butylcyclohexyl)oxycarbonyloxy carbonate Chemical compound C1CC(C(C)(C)C)CCC1OC(=O)OOC(=O)OC1CCC(C(C)(C)C)CC1 NOBYOEQUFMGXBP-UHFFFAOYSA-N 0.000 description 2
- BEQKKZICTDFVMG-UHFFFAOYSA-N 1,2,3,4,6-pentaoxepane-5,7-dione Chemical compound O=C1OOOOC(=O)O1 BEQKKZICTDFVMG-UHFFFAOYSA-N 0.000 description 2
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 2
- DPGYCJUCJYUHTM-UHFFFAOYSA-N 2,4,4-trimethylpentan-2-yloxy 2-ethylhexaneperoxoate Chemical compound CCCCC(CC)C(=O)OOOC(C)(C)CC(C)(C)C DPGYCJUCJYUHTM-UHFFFAOYSA-N 0.000 description 2
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 2
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 2
- UJNZPVJNRAJVLL-UHFFFAOYSA-L C1(CCCC1)C(=O)[O-].C1(CCCC1)C(=O)[O-].[Co+2] Chemical compound C1(CCCC1)C(=O)[O-].C1(CCCC1)C(=O)[O-].[Co+2] UJNZPVJNRAJVLL-UHFFFAOYSA-L 0.000 description 2
- GHKOFFNLGXMVNJ-UHFFFAOYSA-N Didodecyl thiobispropanoate Chemical compound CCCCCCCCCCCCOC(=O)CCSCCC(=O)OCCCCCCCCCCCC GHKOFFNLGXMVNJ-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 229910001297 Zn alloy Inorganic materials 0.000 description 2
- 150000008065 acid anhydrides Chemical class 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- 125000002723 alicyclic group Chemical group 0.000 description 2
- 125000001931 aliphatic group Chemical group 0.000 description 2
- 150000001413 amino acids Chemical class 0.000 description 2
- 150000004982 aromatic amines Chemical class 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 2
- 150000001735 carboxylic acids Chemical class 0.000 description 2
- 239000007822 coupling agent Substances 0.000 description 2
- PFURGBBHAOXLIO-UHFFFAOYSA-N cyclohexane-1,2-diol Chemical compound OC1CCCCC1O PFURGBBHAOXLIO-UHFFFAOYSA-N 0.000 description 2
- 239000003085 diluting agent Substances 0.000 description 2
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 2
- POULHZVOKOAJMA-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 description 2
- 229920006336 epoxy molding compound Polymers 0.000 description 2
- 235000011187 glycerol Nutrition 0.000 description 2
- 239000011256 inorganic filler Substances 0.000 description 2
- 229910003475 inorganic filler Inorganic materials 0.000 description 2
- 150000002762 monocarboxylic acid derivatives Chemical class 0.000 description 2
- 150000002763 monocarboxylic acids Chemical class 0.000 description 2
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 2
- BDJRBEYXGGNYIS-UHFFFAOYSA-N nonanedioic acid Chemical compound OC(=O)CCCCCCCC(O)=O BDJRBEYXGGNYIS-UHFFFAOYSA-N 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 150000002989 phenols Chemical class 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- WLJVNTCWHIRURA-UHFFFAOYSA-N pimelic acid Chemical compound OC(=O)CCCCCC(O)=O WLJVNTCWHIRURA-UHFFFAOYSA-N 0.000 description 2
- 229920003192 poly(bis maleimide) Polymers 0.000 description 2
- 239000003505 polymerization initiator Substances 0.000 description 2
- 239000001294 propane Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- CXMXRPHRNRROMY-UHFFFAOYSA-N sebacic acid Chemical compound OC(=O)CCCCCCCCC(O)=O CXMXRPHRNRROMY-UHFFFAOYSA-N 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- WSFQLUVWDKCYSW-UHFFFAOYSA-M sodium;2-hydroxy-3-morpholin-4-ylpropane-1-sulfonate Chemical compound [Na+].[O-]S(=O)(=O)CC(O)CN1CCOCC1 WSFQLUVWDKCYSW-UHFFFAOYSA-M 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- TYFQFVWCELRYAO-UHFFFAOYSA-N suberic acid Chemical compound OC(=O)CCCCCCC(O)=O TYFQFVWCELRYAO-UHFFFAOYSA-N 0.000 description 2
- LVEOKSIILWWVEO-UHFFFAOYSA-N tetradecyl 3-(3-oxo-3-tetradecoxypropyl)sulfanylpropanoate Chemical compound CCCCCCCCCCCCCCOC(=O)CCSCCC(=O)OCCCCCCCCCCCCCC LVEOKSIILWWVEO-UHFFFAOYSA-N 0.000 description 2
- 150000003573 thiols Chemical class 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- YFYZISUCGPUHSR-UHFFFAOYSA-L zinc;cyclopentanecarboxylate Chemical compound [Zn+2].[O-]C(=O)C1CCCC1.[O-]C(=O)C1CCCC1 YFYZISUCGPUHSR-UHFFFAOYSA-L 0.000 description 2
- DTGKSKDOIYIVQL-WEDXCCLWSA-N (+)-borneol Chemical group C1C[C@@]2(C)[C@@H](O)C[C@@H]1C2(C)C DTGKSKDOIYIVQL-WEDXCCLWSA-N 0.000 description 1
- DEQUKPCANKRTPZ-UHFFFAOYSA-N (2,3-dihydroxyphenyl)-phenylmethanone Chemical compound OC1=CC=CC(C(=O)C=2C=CC=CC=2)=C1O DEQUKPCANKRTPZ-UHFFFAOYSA-N 0.000 description 1
- LJCJRRKKAKAKRV-UHFFFAOYSA-N (2-amino-2-methylpropyl) 3-(3,5-ditert-butyl-4-hydroxyphenyl)propanoate Chemical group CC(C)(N)COC(=O)CCC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 LJCJRRKKAKAKRV-UHFFFAOYSA-N 0.000 description 1
- FVQMJJQUGGVLEP-UHFFFAOYSA-N (2-methylpropan-2-yl)oxy 2-ethylhexaneperoxoate Chemical compound CCCCC(CC)C(=O)OOOC(C)(C)C FVQMJJQUGGVLEP-UHFFFAOYSA-N 0.000 description 1
- QEQBMZQFDDDTPN-UHFFFAOYSA-N (2-methylpropan-2-yl)oxy benzenecarboperoxoate Chemical compound CC(C)(C)OOOC(=O)C1=CC=CC=C1 QEQBMZQFDDDTPN-UHFFFAOYSA-N 0.000 description 1
- ZORJPNCZZRLEDF-UHFFFAOYSA-N (3-methoxy-3-methylbutoxy)carbonyloxy (3-methoxy-3-methylbutyl) carbonate Chemical compound COC(C)(C)CCOC(=O)OOC(=O)OCCC(C)(C)OC ZORJPNCZZRLEDF-UHFFFAOYSA-N 0.000 description 1
- MUTGBJKUEZFXGO-OLQVQODUSA-N (3as,7ar)-3a,4,5,6,7,7a-hexahydro-2-benzofuran-1,3-dione Chemical compound C1CCC[C@@H]2C(=O)OC(=O)[C@@H]21 MUTGBJKUEZFXGO-OLQVQODUSA-N 0.000 description 1
- KMOUUZVZFBCRAM-OLQVQODUSA-N (3as,7ar)-3a,4,7,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1C=CC[C@@H]2C(=O)OC(=O)[C@@H]21 KMOUUZVZFBCRAM-OLQVQODUSA-N 0.000 description 1
- LPVHVQFTYXQKAP-YFKPBYRVSA-N (4r)-3-formyl-2,2-dimethyl-1,3-thiazolidine-4-carboxylic acid Chemical compound CC1(C)SC[C@@H](C(O)=O)N1C=O LPVHVQFTYXQKAP-YFKPBYRVSA-N 0.000 description 1
- RIPYNJLMMFGZSX-UHFFFAOYSA-N (5-benzoylperoxy-2,5-dimethylhexan-2-yl) benzenecarboperoxoate Chemical compound C=1C=CC=CC=1C(=O)OOC(C)(C)CCC(C)(C)OOC(=O)C1=CC=CC=C1 RIPYNJLMMFGZSX-UHFFFAOYSA-N 0.000 description 1
- RUEBPOOTFCZRBC-UHFFFAOYSA-N (5-methyl-2-phenyl-1h-imidazol-4-yl)methanol Chemical compound OCC1=C(C)NC(C=2C=CC=CC=2)=N1 RUEBPOOTFCZRBC-UHFFFAOYSA-N 0.000 description 1
- BLKRGXCGFRXRNQ-SNAWJCMRSA-N (z)-3-carbonoperoxoyl-4,4-dimethylpent-2-enoic acid Chemical compound OC(=O)/C=C(C(C)(C)C)\C(=O)OO BLKRGXCGFRXRNQ-SNAWJCMRSA-N 0.000 description 1
- WBYWAXJHAXSJNI-VOTSOKGWSA-M .beta-Phenylacrylic acid Natural products [O-]C(=O)\C=C\C1=CC=CC=C1 WBYWAXJHAXSJNI-VOTSOKGWSA-M 0.000 description 1
- MJYFYGVCLHNRKB-UHFFFAOYSA-N 1,1,2-trifluoroethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC(F)(F)CF MJYFYGVCLHNRKB-UHFFFAOYSA-N 0.000 description 1
- FYRCDEARNUVZRG-UHFFFAOYSA-N 1,1,5-trimethyl-3,3-bis(2-methylpentan-2-ylperoxy)cyclohexane Chemical compound CCCC(C)(C)OOC1(OOC(C)(C)CCC)CC(C)CC(C)(C)C1 FYRCDEARNUVZRG-UHFFFAOYSA-N 0.000 description 1
- VBQCFYPTKHCPGI-UHFFFAOYSA-N 1,1-bis(2-methylpentan-2-ylperoxy)cyclohexane Chemical compound CCCC(C)(C)OOC1(OOC(C)(C)CCC)CCCCC1 VBQCFYPTKHCPGI-UHFFFAOYSA-N 0.000 description 1
- NALFRYPTRXKZPN-UHFFFAOYSA-N 1,1-bis(tert-butylperoxy)-3,3,5-trimethylcyclohexane Chemical compound CC1CC(C)(C)CC(OOC(C)(C)C)(OOC(C)(C)C)C1 NALFRYPTRXKZPN-UHFFFAOYSA-N 0.000 description 1
- OTMBZPVYOQYPBE-UHFFFAOYSA-N 1,1-bis(tert-butylperoxy)cyclododecane Chemical compound CC(C)(C)OOC1(OOC(C)(C)C)CCCCCCCCCCC1 OTMBZPVYOQYPBE-UHFFFAOYSA-N 0.000 description 1
- HSLFISVKRDQEBY-UHFFFAOYSA-N 1,1-bis(tert-butylperoxy)cyclohexane Chemical compound CC(C)(C)OOC1(OOC(C)(C)C)CCCCC1 HSLFISVKRDQEBY-UHFFFAOYSA-N 0.000 description 1
- OKIRBHVFJGXOIS-UHFFFAOYSA-N 1,2-di(propan-2-yl)benzene Chemical compound CC(C)C1=CC=CC=C1C(C)C OKIRBHVFJGXOIS-UHFFFAOYSA-N 0.000 description 1
- YHMYGUUIMTVXNW-UHFFFAOYSA-N 1,3-dihydrobenzimidazole-2-thione Chemical compound C1=CC=C2NC(S)=NC2=C1 YHMYGUUIMTVXNW-UHFFFAOYSA-N 0.000 description 1
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 1
- ALVZNPYWJMLXKV-UHFFFAOYSA-N 1,9-Nonanediol Chemical compound OCCCCCCCCCO ALVZNPYWJMLXKV-UHFFFAOYSA-N 0.000 description 1
- AYMDJPGTQFHDSA-UHFFFAOYSA-N 1-(2-ethenoxyethoxy)-2-ethoxyethane Chemical compound CCOCCOCCOC=C AYMDJPGTQFHDSA-UHFFFAOYSA-N 0.000 description 1
- XSZYESUNPWGWFQ-UHFFFAOYSA-N 1-(2-hydroperoxypropan-2-yl)-4-methylcyclohexane Chemical compound CC1CCC(C(C)(C)OO)CC1 XSZYESUNPWGWFQ-UHFFFAOYSA-N 0.000 description 1
- KMBSSXSNDSJXCG-UHFFFAOYSA-N 1-[2-(2-hydroxyundecylamino)ethylamino]undecan-2-ol Chemical compound CCCCCCCCCC(O)CNCCNCC(O)CCCCCCCCC KMBSSXSNDSJXCG-UHFFFAOYSA-N 0.000 description 1
- YNSSPVZNXLACMW-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)-3-ethyl-5-methylphenyl]methyl]-2-ethyl-6-methylphenyl]pyrrole-2,5-dione Chemical compound C=1C(C)=C(N2C(C=CC2=O)=O)C(CC)=CC=1CC(C=C1CC)=CC(C)=C1N1C(=O)C=CC1=O YNSSPVZNXLACMW-UHFFFAOYSA-N 0.000 description 1
- SDXHBDVTZNMBEW-UHFFFAOYSA-N 1-ethoxy-2-(2-hydroxyethoxy)ethanol Chemical compound CCOC(O)COCCO SDXHBDVTZNMBEW-UHFFFAOYSA-N 0.000 description 1
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 description 1
- PEHHIFQTECNPHG-UHFFFAOYSA-N 1-tert-butylperoxy-2-methylcyclohexane Chemical compound CC1CCCCC1OOC(C)(C)C PEHHIFQTECNPHG-UHFFFAOYSA-N 0.000 description 1
- XCTNDJAFNBCVOM-UHFFFAOYSA-N 1h-imidazo[4,5-b]pyridin-2-ylmethanamine Chemical compound C1=CC=C2NC(CN)=NC2=N1 XCTNDJAFNBCVOM-UHFFFAOYSA-N 0.000 description 1
- PLQNDYUMLMVFCX-UHFFFAOYSA-N 1h-imidazol-2-ylmethanediol Chemical compound OC(O)C1=NC=CN1 PLQNDYUMLMVFCX-UHFFFAOYSA-N 0.000 description 1
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 description 1
- HQOVXPHOJANJBR-UHFFFAOYSA-N 2,2-bis(tert-butylperoxy)butane Chemical compound CC(C)(C)OOC(C)(CC)OOC(C)(C)C HQOVXPHOJANJBR-UHFFFAOYSA-N 0.000 description 1
- CRJIYMRJTJWVLU-UHFFFAOYSA-N 2,4,4-trimethylpentan-2-yl 3-(5,5-dimethylhexyl)dioxirane-3-carboxylate Chemical compound CC(C)(C)CCCCC1(C(=O)OC(C)(C)CC(C)(C)C)OO1 CRJIYMRJTJWVLU-UHFFFAOYSA-N 0.000 description 1
- PISLZQACAJMAIO-UHFFFAOYSA-N 2,4-diethyl-6-methylbenzene-1,3-diamine Chemical compound CCC1=CC(C)=C(N)C(CC)=C1N PISLZQACAJMAIO-UHFFFAOYSA-N 0.000 description 1
- DMWVYCCGCQPJEA-UHFFFAOYSA-N 2,5-bis(tert-butylperoxy)-2,5-dimethylhexane Chemical compound CC(C)(C)OOC(C)(C)CCC(C)(C)OOC(C)(C)C DMWVYCCGCQPJEA-UHFFFAOYSA-N 0.000 description 1
- OVJHMJJVXOJMBB-UHFFFAOYSA-N 2-(1,3-dioxo-3a,4,5,6,7,7a-hexahydroisoindol-2-yl)ethyl prop-2-enoate Chemical compound C1CCCC2C(=O)N(CCOC(=O)C=C)C(=O)C21 OVJHMJJVXOJMBB-UHFFFAOYSA-N 0.000 description 1
- XDVMJFWMHCWGLB-UHFFFAOYSA-N 2-(1,3-dioxoisoindol-4-yl)ethyl prop-2-enoate Chemical compound C=CC(=O)OCCC1=CC=CC2=C1C(=O)NC2=O XDVMJFWMHCWGLB-UHFFFAOYSA-N 0.000 description 1
- GUMPIILNPLLYKX-UHFFFAOYSA-N 2-(2,5-dioxopyrrol-3-yl)ethyl prop-2-enoate Chemical compound C(C=C)(=O)OCCC=1C(=O)NC(C1)=O GUMPIILNPLLYKX-UHFFFAOYSA-N 0.000 description 1
- PJABOTZVAHGVAF-UHFFFAOYSA-N 2-(2-cyclohexylpropan-2-yl)-7,7-dimethyloctaneperoxoic acid Chemical compound CC(C)(C)CCCCC(C(=O)OO)C(C)(C)C1CCCCC1 PJABOTZVAHGVAF-UHFFFAOYSA-N 0.000 description 1
- CHKCPIUYSMYEEW-UHFFFAOYSA-N 2-(2-cyclohexylpropan-2-ylperoxy)-2-ethylhexanoic acid Chemical compound CCCCC(CC)(C(O)=O)OOC(C)(C)C1CCCCC1 CHKCPIUYSMYEEW-UHFFFAOYSA-N 0.000 description 1
- CZAZXHQSSWRBHT-UHFFFAOYSA-N 2-(2-hydroxyphenyl)-3,4,5,6-tetramethylphenol Chemical compound OC1=C(C)C(C)=C(C)C(C)=C1C1=CC=CC=C1O CZAZXHQSSWRBHT-UHFFFAOYSA-N 0.000 description 1
- XMNIXWIUMCBBBL-UHFFFAOYSA-N 2-(2-phenylpropan-2-ylperoxy)propan-2-ylbenzene Chemical compound C=1C=CC=CC=1C(C)(C)OOC(C)(C)C1=CC=CC=C1 XMNIXWIUMCBBBL-UHFFFAOYSA-N 0.000 description 1
- CUFXMPWHOWYNSO-UHFFFAOYSA-N 2-[(4-methylphenoxy)methyl]oxirane Chemical compound C1=CC(C)=CC=C1OCC1OC1 CUFXMPWHOWYNSO-UHFFFAOYSA-N 0.000 description 1
- AZMMSEASPQHHTC-UHFFFAOYSA-N 2-[1,1-bis(2-hydroxyphenyl)ethyl]phenol Chemical compound C=1C=CC=C(O)C=1C(C=1C(=CC=CC=1)O)(C)C1=CC=CC=C1O AZMMSEASPQHHTC-UHFFFAOYSA-N 0.000 description 1
- WFNXYMSIAASORV-UHFFFAOYSA-N 2-[1-(2-hydroxyphenyl)cyclohexyl]phenol Chemical compound OC1=CC=CC=C1C1(C=2C(=CC=CC=2)O)CCCCC1 WFNXYMSIAASORV-UHFFFAOYSA-N 0.000 description 1
- PEHXKUVLLWGBJS-UHFFFAOYSA-N 2-[1-(2-hydroxyphenyl)ethyl]phenol Chemical compound C=1C=CC=C(O)C=1C(C)C1=CC=CC=C1O PEHXKUVLLWGBJS-UHFFFAOYSA-N 0.000 description 1
- VZHATSRCGGWIRE-UHFFFAOYSA-N 2-[3-(2-hydroxyethyl)cyclohexyl]ethanol Chemical compound OCCC1CCCC(CCO)C1 VZHATSRCGGWIRE-UHFFFAOYSA-N 0.000 description 1
- JVGDVPVEKJSWIO-UHFFFAOYSA-N 2-[4-(2-hydroxyethyl)cyclohexyl]ethanol Chemical compound OCCC1CCC(CCO)CC1 JVGDVPVEKJSWIO-UHFFFAOYSA-N 0.000 description 1
- HIGURUTWFKYJCH-UHFFFAOYSA-N 2-[[1-(oxiran-2-ylmethoxymethyl)cyclohexyl]methoxymethyl]oxirane Chemical compound C1OC1COCC1(COCC2OC2)CCCCC1 HIGURUTWFKYJCH-UHFFFAOYSA-N 0.000 description 1
- LJBWJFWNFUKAGS-UHFFFAOYSA-N 2-[bis(2-hydroxyphenyl)methyl]phenol Chemical compound OC1=CC=CC=C1C(C=1C(=CC=CC=1)O)C1=CC=CC=C1O LJBWJFWNFUKAGS-UHFFFAOYSA-N 0.000 description 1
- CDAWCLOXVUBKRW-UHFFFAOYSA-N 2-aminophenol Chemical group NC1=CC=CC=C1O CDAWCLOXVUBKRW-UHFFFAOYSA-N 0.000 description 1
- XKBHBVFIWWDGQX-UHFFFAOYSA-N 2-bromo-3,3,4,4,5,5,5-heptafluoropent-1-ene Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(Br)=C XKBHBVFIWWDGQX-UHFFFAOYSA-N 0.000 description 1
- UGLKXRNHZDQJDH-UHFFFAOYSA-N 2-ethyl-1h-imidazole;2-phenyl-1h-imidazole Chemical compound CCC1=NC=CN1.C1=CNC(C=2C=CC=CC=2)=N1 UGLKXRNHZDQJDH-UHFFFAOYSA-N 0.000 description 1
- FHRAKXJVEOBCBQ-UHFFFAOYSA-L 2-ethylhexanoate;manganese(2+) Chemical compound [Mn+2].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O FHRAKXJVEOBCBQ-UHFFFAOYSA-L 0.000 description 1
- UVPKUTPZWFHAHY-UHFFFAOYSA-L 2-ethylhexanoate;nickel(2+) Chemical compound [Ni+2].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O UVPKUTPZWFHAHY-UHFFFAOYSA-L 0.000 description 1
- MIRQGKQPLPBZQM-UHFFFAOYSA-N 2-hydroperoxy-2,4,4-trimethylpentane Chemical compound CC(C)(C)CC(C)(C)OO MIRQGKQPLPBZQM-UHFFFAOYSA-N 0.000 description 1
- WFUGQJXVXHBTEM-UHFFFAOYSA-N 2-hydroperoxy-2-(2-hydroperoxybutan-2-ylperoxy)butane Chemical compound CCC(C)(OO)OOC(C)(CC)OO WFUGQJXVXHBTEM-UHFFFAOYSA-N 0.000 description 1
- BZGMEGUFFDTCNP-UHFFFAOYSA-N 2-hydroperoxy-2-methylpentane Chemical compound CCCC(C)(C)OO BZGMEGUFFDTCNP-UHFFFAOYSA-N 0.000 description 1
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 1
- RTEZVHMDMFEURJ-UHFFFAOYSA-N 2-methylpentan-2-yl 2,2-dimethylpropaneperoxoate Chemical compound CCCC(C)(C)OOC(=O)C(C)(C)C RTEZVHMDMFEURJ-UHFFFAOYSA-N 0.000 description 1
- WXDJDZIIPSOZAH-UHFFFAOYSA-N 2-methylpentan-2-yl benzenecarboperoxoate Chemical compound CCCC(C)(C)OOC(=O)C1=CC=CC=C1 WXDJDZIIPSOZAH-UHFFFAOYSA-N 0.000 description 1
- JZUHIOJYCPIVLQ-UHFFFAOYSA-N 2-methylpentane-1,5-diamine Chemical compound NCC(C)CCCN JZUHIOJYCPIVLQ-UHFFFAOYSA-N 0.000 description 1
- RPBWMJBZQXCSFW-UHFFFAOYSA-N 2-methylpropanoyl 2-methylpropaneperoxoate Chemical compound CC(C)C(=O)OOC(=O)C(C)C RPBWMJBZQXCSFW-UHFFFAOYSA-N 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- BIISIZOQPWZPPS-UHFFFAOYSA-N 2-tert-butylperoxypropan-2-ylbenzene Chemical compound CC(C)(C)OOC(C)(C)C1=CC=CC=C1 BIISIZOQPWZPPS-UHFFFAOYSA-N 0.000 description 1
- KFGFVPMRLOQXNB-UHFFFAOYSA-N 3,5,5-trimethylhexanoyl 3,5,5-trimethylhexaneperoxoate Chemical compound CC(C)(C)CC(C)CC(=O)OOC(=O)CC(C)CC(C)(C)C KFGFVPMRLOQXNB-UHFFFAOYSA-N 0.000 description 1
- RNLHGQLZWXBQNY-UHFFFAOYSA-N 3-(aminomethyl)-3,5,5-trimethylcyclohexan-1-amine Chemical compound CC1(C)CC(N)CC(C)(CN)C1 RNLHGQLZWXBQNY-UHFFFAOYSA-N 0.000 description 1
- WVRNUXJQQFPNMN-VAWYXSNFSA-N 3-[(e)-dodec-1-enyl]oxolane-2,5-dione Chemical compound CCCCCCCCCC\C=C\C1CC(=O)OC1=O WVRNUXJQQFPNMN-VAWYXSNFSA-N 0.000 description 1
- QOXOZONBQWIKDA-UHFFFAOYSA-N 3-hydroxypropyl Chemical group [CH2]CCO QOXOZONBQWIKDA-UHFFFAOYSA-N 0.000 description 1
- WLDMPODMCFGWAA-UHFFFAOYSA-N 3a,4,5,6,7,7a-hexahydroisoindole-1,3-dione Chemical compound C1CCCC2C(=O)NC(=O)C21 WLDMPODMCFGWAA-UHFFFAOYSA-N 0.000 description 1
- DZIHTWJGPDVSGE-UHFFFAOYSA-N 4-[(4-aminocyclohexyl)methyl]cyclohexan-1-amine Chemical compound C1CC(N)CCC1CC1CCC(N)CC1 DZIHTWJGPDVSGE-UHFFFAOYSA-N 0.000 description 1
- ODJUOZPKKHIEOZ-UHFFFAOYSA-N 4-[2-(4-hydroxy-3,5-dimethylphenyl)propan-2-yl]-2,6-dimethylphenol Chemical compound CC1=C(O)C(C)=CC(C(C)(C)C=2C=C(C)C(O)=C(C)C=2)=C1 ODJUOZPKKHIEOZ-UHFFFAOYSA-N 0.000 description 1
- VNGLVZLEUDIDQH-UHFFFAOYSA-N 4-[2-(4-hydroxyphenyl)propan-2-yl]phenol;2-methyloxirane Chemical compound CC1CO1.C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 VNGLVZLEUDIDQH-UHFFFAOYSA-N 0.000 description 1
- UZFMOKQJFYMBGY-UHFFFAOYSA-N 4-hydroxy-TEMPO Chemical compound CC1(C)CC(O)CC(C)(C)N1[O] UZFMOKQJFYMBGY-UHFFFAOYSA-N 0.000 description 1
- SXIFAEWFOJETOA-UHFFFAOYSA-N 4-hydroxy-butyl Chemical group [CH2]CCCO SXIFAEWFOJETOA-UHFFFAOYSA-N 0.000 description 1
- NFWPZNNZUCPLAX-UHFFFAOYSA-N 4-methoxy-3-methylaniline Chemical compound COC1=CC=C(N)C=C1C NFWPZNNZUCPLAX-UHFFFAOYSA-N 0.000 description 1
- TYOXIFXYEIILLY-UHFFFAOYSA-N 5-methyl-2-phenyl-1h-imidazole Chemical compound N1C(C)=CN=C1C1=CC=CC=C1 TYOXIFXYEIILLY-UHFFFAOYSA-N 0.000 description 1
- ORTNTAAZJSNACP-UHFFFAOYSA-N 6-(oxiran-2-ylmethoxy)hexan-1-ol Chemical compound OCCCCCCOCC1CO1 ORTNTAAZJSNACP-UHFFFAOYSA-N 0.000 description 1
- SLXKOJJOQWFEFD-UHFFFAOYSA-N 6-aminohexanoic acid Chemical compound NCCCCCC(O)=O SLXKOJJOQWFEFD-UHFFFAOYSA-N 0.000 description 1
- ZLWGDCZQSWUXRV-UHFFFAOYSA-N 6-ethenyl-1h-triazine-2,4-diamine Chemical compound NN1NC(C=C)=CC(N)=N1 ZLWGDCZQSWUXRV-UHFFFAOYSA-N 0.000 description 1
- KNDQHSIWLOJIGP-UHFFFAOYSA-N 826-62-0 Chemical compound C1C2C3C(=O)OC(=O)C3C1C=C2 KNDQHSIWLOJIGP-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- 239000004342 Benzoyl peroxide Substances 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- SJVNXUPVAXQOPG-UHFFFAOYSA-L C1(CCCC1)C(=O)[O-].[Mn+2].C1(CCCC1)C(=O)[O-] Chemical compound C1(CCCC1)C(=O)[O-].[Mn+2].C1(CCCC1)C(=O)[O-] SJVNXUPVAXQOPG-UHFFFAOYSA-L 0.000 description 1
- MQJKPEGWNLWLTK-UHFFFAOYSA-N Dapsone Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=C1 MQJKPEGWNLWLTK-UHFFFAOYSA-N 0.000 description 1
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 101000896726 Homo sapiens Lanosterol 14-alpha demethylase Proteins 0.000 description 1
- 102100021695 Lanosterol 14-alpha demethylase Human genes 0.000 description 1
- YIVJZNGAASQVEM-UHFFFAOYSA-N Lauroyl peroxide Chemical compound CCCCCCCCCCCC(=O)OOC(=O)CCCCCCCCCCC YIVJZNGAASQVEM-UHFFFAOYSA-N 0.000 description 1
- WHNWPMSKXPGLAX-UHFFFAOYSA-N N-Vinyl-2-pyrrolidone Chemical compound C=CN1CCCC1=O WHNWPMSKXPGLAX-UHFFFAOYSA-N 0.000 description 1
- FQYUMYWMJTYZTK-UHFFFAOYSA-N Phenyl glycidyl ether Chemical compound C1OC1COC1=CC=CC=C1 FQYUMYWMJTYZTK-UHFFFAOYSA-N 0.000 description 1
- LGRFSURHDFAFJT-UHFFFAOYSA-N Phthalic anhydride Natural products C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- ULQMPOIOSDXIGC-UHFFFAOYSA-N [2,2-dimethyl-3-(2-methylprop-2-enoyloxy)propyl] 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC(C)(C)COC(=O)C(C)=C ULQMPOIOSDXIGC-UHFFFAOYSA-N 0.000 description 1
- XDODWINGEHBYRT-UHFFFAOYSA-N [2-(hydroxymethyl)cyclohexyl]methanol Chemical compound OCC1CCCCC1CO XDODWINGEHBYRT-UHFFFAOYSA-N 0.000 description 1
- VTLHIRNKQSFSJS-UHFFFAOYSA-N [3-(3-sulfanylbutanoyloxy)-2,2-bis(3-sulfanylbutanoyloxymethyl)propyl] 3-sulfanylbutanoate Chemical compound CC(S)CC(=O)OCC(COC(=O)CC(C)S)(COC(=O)CC(C)S)COC(=O)CC(C)S VTLHIRNKQSFSJS-UHFFFAOYSA-N 0.000 description 1
- FDLQZKYLHJJBHD-UHFFFAOYSA-N [3-(aminomethyl)phenyl]methanamine Chemical compound NCC1=CC=CC(CN)=C1 FDLQZKYLHJJBHD-UHFFFAOYSA-N 0.000 description 1
- LUSFFPXRDZKBMF-UHFFFAOYSA-N [3-(hydroxymethyl)cyclohexyl]methanol Chemical compound OCC1CCCC(CO)C1 LUSFFPXRDZKBMF-UHFFFAOYSA-N 0.000 description 1
- YIMQCDZDWXUDCA-UHFFFAOYSA-N [4-(hydroxymethyl)cyclohexyl]methanol Chemical compound OCC1CCC(CO)CC1 YIMQCDZDWXUDCA-UHFFFAOYSA-N 0.000 description 1
- JUIBLDFFVYKUAC-UHFFFAOYSA-N [5-(2-ethylhexanoylperoxy)-2,5-dimethylhexan-2-yl] 2-ethylhexaneperoxoate Chemical compound CCCCC(CC)C(=O)OOC(C)(C)CCC(C)(C)OOC(=O)C(CC)CCCC JUIBLDFFVYKUAC-UHFFFAOYSA-N 0.000 description 1
- MZVQCMJNVPIDEA-UHFFFAOYSA-N [CH2]CN(CC)CC Chemical group [CH2]CN(CC)CC MZVQCMJNVPIDEA-UHFFFAOYSA-N 0.000 description 1
- ISSDFLKUSQAECW-UHFFFAOYSA-N acetic acid;pyrrole-2,5-dione Chemical compound CC(O)=O.O=C1NC(=O)C=C1 ISSDFLKUSQAECW-UHFFFAOYSA-N 0.000 description 1
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Natural products CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- IBVAQQYNSHJXBV-UHFFFAOYSA-N adipic acid dihydrazide Chemical compound NNC(=O)CCCCC(=O)NN IBVAQQYNSHJXBV-UHFFFAOYSA-N 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 125000002947 alkylene group Chemical group 0.000 description 1
- 125000005336 allyloxy group Chemical group 0.000 description 1
- XYLMUPLGERFSHI-UHFFFAOYSA-N alpha-Methylstyrene Chemical class CC(=C)C1=CC=CC=C1 XYLMUPLGERFSHI-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229960002684 aminocaproic acid Drugs 0.000 description 1
- IMUDHTPIFIBORV-UHFFFAOYSA-N aminoethylpiperazine Chemical compound NCCN1CCNCC1 IMUDHTPIFIBORV-UHFFFAOYSA-N 0.000 description 1
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 125000002511 behenyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- UTTHLMXOSUFZCQ-UHFFFAOYSA-N benzene-1,3-dicarbohydrazide Chemical compound NNC(=O)C1=CC=CC(C(=O)NN)=C1 UTTHLMXOSUFZCQ-UHFFFAOYSA-N 0.000 description 1
- AKPNCJLPXARVFK-UHFFFAOYSA-N benzoyl 2-tert-butylperoxy-3-methylbenzoate Chemical compound CC1=CC=CC(C(=O)OC(=O)C=2C=CC=CC=2)=C1OOC(C)(C)C AKPNCJLPXARVFK-UHFFFAOYSA-N 0.000 description 1
- 235000019400 benzoyl peroxide Nutrition 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- AJTNUOLFTQRAKF-UHFFFAOYSA-N bis[(2-methylpropan-2-yl)oxy] benzene-1,3-dicarboperoxoate Chemical compound CC(C)(C)OOOC(=O)C1=CC=CC(C(=O)OOOC(C)(C)C)=C1 AJTNUOLFTQRAKF-UHFFFAOYSA-N 0.000 description 1
- 230000000740 bleeding effect Effects 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- NSGQRLUGQNBHLD-UHFFFAOYSA-N butan-2-yl butan-2-yloxycarbonyloxy carbonate Chemical compound CCC(C)OC(=O)OOC(=O)OC(C)CC NSGQRLUGQNBHLD-UHFFFAOYSA-N 0.000 description 1
- CDQSJQSWAWPGKG-UHFFFAOYSA-N butane-1,1-diol Chemical compound CCCC(O)O CDQSJQSWAWPGKG-UHFFFAOYSA-N 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- 125000006226 butoxyethyl group Chemical group 0.000 description 1
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 235000013985 cinnamic acid Nutrition 0.000 description 1
- 229930016911 cinnamic acid Natural products 0.000 description 1
- PMMYEEVYMWASQN-IMJSIDKUSA-N cis-4-Hydroxy-L-proline Chemical compound O[C@@H]1CN[C@H](C(O)=O)C1 PMMYEEVYMWASQN-IMJSIDKUSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- IFDVQVHZEKPUSC-UHFFFAOYSA-N cyclohex-3-ene-1,2-dicarboxylic acid Chemical compound OC(=O)C1CCC=CC1C(O)=O IFDVQVHZEKPUSC-UHFFFAOYSA-N 0.000 description 1
- PDXRQENMIVHKPI-UHFFFAOYSA-N cyclohexane-1,1-diol Chemical compound OC1(O)CCCCC1 PDXRQENMIVHKPI-UHFFFAOYSA-N 0.000 description 1
- SSJXIUAHEKJCMH-UHFFFAOYSA-N cyclohexane-1,2-diamine Chemical compound NC1CCCCC1N SSJXIUAHEKJCMH-UHFFFAOYSA-N 0.000 description 1
- QSAWQNUELGIYBC-UHFFFAOYSA-N cyclohexane-1,2-dicarboxylic acid Chemical compound OC(=O)C1CCCCC1C(O)=O QSAWQNUELGIYBC-UHFFFAOYSA-N 0.000 description 1
- RLMGYIOTPQVQJR-UHFFFAOYSA-N cyclohexane-1,3-diol Chemical compound OC1CCCC(O)C1 RLMGYIOTPQVQJR-UHFFFAOYSA-N 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- YGQOQTHHZXZSJE-UHFFFAOYSA-L cyclopentanecarboxylate;nickel(2+) Chemical compound [Ni+2].[O-]C(=O)C1CCCC1.[O-]C(=O)C1CCCC1 YGQOQTHHZXZSJE-UHFFFAOYSA-L 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- INSRQEMEVAMETL-UHFFFAOYSA-N decane-1,1-diol Chemical compound CCCCCCCCCC(O)O INSRQEMEVAMETL-UHFFFAOYSA-N 0.000 description 1
- FOTKYAAJKYLFFN-UHFFFAOYSA-N decane-1,10-diol Chemical compound OCCCCCCCCCCO FOTKYAAJKYLFFN-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- LSXWFXONGKSEMY-UHFFFAOYSA-N di-tert-butyl peroxide Chemical compound CC(C)(C)OOC(C)(C)C LSXWFXONGKSEMY-UHFFFAOYSA-N 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 150000001991 dicarboxylic acids Chemical class 0.000 description 1
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 description 1
- 239000000539 dimer Substances 0.000 description 1
- ZZTCPWRAHWXWCH-UHFFFAOYSA-N diphenylmethanediamine Chemical compound C=1C=CC=CC=1C(N)(N)C1=CC=CC=C1 ZZTCPWRAHWXWCH-UHFFFAOYSA-N 0.000 description 1
- KGGOIDKBHYYNIC-UHFFFAOYSA-N ditert-butyl 4-[3,4-bis(tert-butylperoxycarbonyl)benzoyl]benzene-1,2-dicarboperoxoate Chemical compound C1=C(C(=O)OOC(C)(C)C)C(C(=O)OOC(C)(C)C)=CC=C1C(=O)C1=CC=C(C(=O)OOC(C)(C)C)C(C(=O)OOC(C)(C)C)=C1 KGGOIDKBHYYNIC-UHFFFAOYSA-N 0.000 description 1
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- YWXOVPFDZMOAHI-UHFFFAOYSA-N ethane-1,2-diol;prop-2-enamide Chemical compound OCCO.NC(=O)C=C YWXOVPFDZMOAHI-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229960002449 glycine Drugs 0.000 description 1
- 235000013905 glycine and its sodium salt Nutrition 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- ACCCMOQWYVYDOT-UHFFFAOYSA-N hexane-1,1-diol Chemical compound CCCCCC(O)O ACCCMOQWYVYDOT-UHFFFAOYSA-N 0.000 description 1
- XXMIOPMDWAUFGU-UHFFFAOYSA-N hexane-1,6-diol Chemical compound OCCCCCCO XXMIOPMDWAUFGU-UHFFFAOYSA-N 0.000 description 1
- CTRFEEQNDJFNNL-UHFFFAOYSA-N hexanoic acid;pyrrole-2,5-dione Chemical compound O=C1NC(=O)C=C1.CCCCCC(O)=O CTRFEEQNDJFNNL-UHFFFAOYSA-N 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 229940018564 m-phenylenediamine Drugs 0.000 description 1
- NFDXJXRLLJOJMB-UHFFFAOYSA-L magnesium cyclopentanecarboxylate Chemical compound C1(CCCC1)C(=O)[O-].[Mg+2].C1(CCCC1)C(=O)[O-] NFDXJXRLLJOJMB-UHFFFAOYSA-L 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- OFUAIAKLWWIPTC-UHFFFAOYSA-L magnesium;naphthalene-2-carboxylate Chemical compound [Mg+2].C1=CC=CC2=CC(C(=O)[O-])=CC=C21.C1=CC=CC2=CC(C(=O)[O-])=CC=C21 OFUAIAKLWWIPTC-UHFFFAOYSA-L 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- SGGOJYZMTYGPCH-UHFFFAOYSA-L manganese(2+);naphthalene-2-carboxylate Chemical compound [Mn+2].C1=CC=CC2=CC(C(=O)[O-])=CC=C21.C1=CC=CC2=CC(C(=O)[O-])=CC=C21 SGGOJYZMTYGPCH-UHFFFAOYSA-L 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229920003145 methacrylic acid copolymer Polymers 0.000 description 1
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- WBYWAXJHAXSJNI-UHFFFAOYSA-N methyl p-hydroxycinnamate Natural products OC(=O)C=CC1=CC=CC=C1 WBYWAXJHAXSJNI-UHFFFAOYSA-N 0.000 description 1
- ZETYUTMSJWMKNQ-UHFFFAOYSA-N n,n',n'-trimethylhexane-1,6-diamine Chemical compound CNCCCCCCN(C)C ZETYUTMSJWMKNQ-UHFFFAOYSA-N 0.000 description 1
- UIEKYBOPAVTZKW-UHFFFAOYSA-L naphthalene-2-carboxylate;nickel(2+) Chemical compound [Ni+2].C1=CC=CC2=CC(C(=O)[O-])=CC=C21.C1=CC=CC2=CC(C(=O)[O-])=CC=C21 UIEKYBOPAVTZKW-UHFFFAOYSA-L 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- FVXBCDWMKCEPCL-UHFFFAOYSA-N nonane-1,1-diol Chemical compound CCCCCCCCC(O)O FVXBCDWMKCEPCL-UHFFFAOYSA-N 0.000 description 1
- OEIJHBUUFURJLI-UHFFFAOYSA-N octane-1,8-diol Chemical compound OCCCCCCCCO OEIJHBUUFURJLI-UHFFFAOYSA-N 0.000 description 1
- SRSFOMHQIATOFV-UHFFFAOYSA-N octanoyl octaneperoxoate Chemical compound CCCCCCCC(=O)OOC(=O)CCCCCCC SRSFOMHQIATOFV-UHFFFAOYSA-N 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 125000000913 palmityl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000005007 perfluorooctyl group Chemical group FC(C(C(C(C(C(C(C(F)(F)F)(F)F)(F)F)(F)F)(F)F)(F)F)(F)F)(F)* 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 1
- CCDXIADKBDSBJU-UHFFFAOYSA-N phenylmethanetriol Chemical group OC(O)(O)C1=CC=CC=C1 CCDXIADKBDSBJU-UHFFFAOYSA-N 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920005906 polyester polyol Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- BWJUFXUULUEGMA-UHFFFAOYSA-N propan-2-yl propan-2-yloxycarbonyloxy carbonate Chemical compound CC(C)OC(=O)OOC(=O)OC(C)C BWJUFXUULUEGMA-UHFFFAOYSA-N 0.000 description 1
- 239000002516 radical scavenger Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 150000003440 styrenes Chemical class 0.000 description 1
- 150000003464 sulfur compounds Chemical class 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- OPQYOFWUFGEMRZ-UHFFFAOYSA-N tert-butyl 2,2-dimethylpropaneperoxoate Chemical compound CC(C)(C)OOC(=O)C(C)(C)C OPQYOFWUFGEMRZ-UHFFFAOYSA-N 0.000 description 1
- NMOALOSNPWTWRH-UHFFFAOYSA-N tert-butyl 7,7-dimethyloctaneperoxoate Chemical compound CC(C)(C)CCCCCC(=O)OOC(C)(C)C NMOALOSNPWTWRH-UHFFFAOYSA-N 0.000 description 1
- SWAXTRYEYUTSAP-UHFFFAOYSA-N tert-butyl ethaneperoxoate Chemical compound CC(=O)OOC(C)(C)C SWAXTRYEYUTSAP-UHFFFAOYSA-N 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- CIHOLLKRGTVIJN-UHFFFAOYSA-N tert‐butyl hydroperoxide Chemical compound CC(C)(C)OO CIHOLLKRGTVIJN-UHFFFAOYSA-N 0.000 description 1
- FAGUFWYHJQFNRV-UHFFFAOYSA-N tetraethylenepentamine Chemical compound NCCNCCNCCNCCN FAGUFWYHJQFNRV-UHFFFAOYSA-N 0.000 description 1
- UFDHBDMSHIXOKF-UHFFFAOYSA-N tetrahydrophthalic acid Natural products OC(=O)C1=C(C(O)=O)CCCC1 UFDHBDMSHIXOKF-UHFFFAOYSA-N 0.000 description 1
- JUAHKSBERRLSHD-UHFFFAOYSA-N tetraphenyl-$l^{5}-phosphane Chemical class C1=CC=CC=C1P(C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 JUAHKSBERRLSHD-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000005809 transesterification reaction Methods 0.000 description 1
- MZHULIWXRDLGRR-UHFFFAOYSA-N tridecyl 3-(3-oxo-3-tridecoxypropyl)sulfanylpropanoate Chemical compound CCCCCCCCCCCCCOC(=O)CCSCCC(=O)OCCCCCCCCCCCCC MZHULIWXRDLGRR-UHFFFAOYSA-N 0.000 description 1
- 125000002889 tridecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- VTHOKNTVYKTUPI-UHFFFAOYSA-N triethoxy-[3-(3-triethoxysilylpropyltetrasulfanyl)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCSSSSCCC[Si](OCC)(OCC)OCC VTHOKNTVYKTUPI-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- ZLYAINKDFVPCBC-UHFFFAOYSA-J tris(cyclopentanecarbonyloxy)stannyl cyclopentanecarboxylate Chemical compound C1(CCCC1)C(=O)[O-].[Sn+4].C1(CCCC1)C(=O)[O-].C1(CCCC1)C(=O)[O-].C1(CCCC1)C(=O)[O-] ZLYAINKDFVPCBC-UHFFFAOYSA-J 0.000 description 1
- 229940070710 valerate Drugs 0.000 description 1
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/04—Oxygen-containing compounds
- C08K5/09—Carboxylic acids; Metal salts thereof; Anhydrides thereof
- C08K5/098—Metal salts of carboxylic acids
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/36—Sulfur-, selenium-, or tellurium-containing compounds
- C08K5/37—Thiols
- C08K5/372—Sulfides, e.g. R-(S)x-R'
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/36—Sulfur-, selenium-, or tellurium-containing compounds
- C08K5/38—Thiocarbonic acids; Derivatives thereof, e.g. xanthates ; i.e. compounds containing -X-C(=X)- groups, X being oxygen or sulfur, at least one X being sulfur
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K9/00—Use of pretreated ingredients
- C08K9/02—Ingredients treated with inorganic substances
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L101/00—Compositions of unspecified macromolecular compounds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/04—Non-macromolecular additives inorganic
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/06—Non-macromolecular additives organic
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J201/00—Adhesives based on unspecified macromolecular compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49568—Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- the present invention relates to a resin composition, a die attach paste including the resin composition, and an adhesive for a heat radiation member including the resin composition. Moreover, this invention relates to the semiconductor device produced using this die attach paste or the adhesive agent for heat radiating members.
- a resin composition containing a thermosetting resin, a curing agent, and an inorganic filler is used to adhere a semiconductor element such as an IC or LSI to a lead frame or the like.
- a resin composition containing a thermosetting resin, a hardening agent, and an inorganic filler is used (patent document 1).
- the former is known as a die attach paste.
- the die attach paste is required not to peel off a cured product in a high temperature process such as wire bonding or solder reflow. Therefore, a die attach paste using a sulfur compound, particularly a thiol-based compound, is known for preventing the cured product from peeling.
- lead frames and substrates on which noble metal plating such as silver plating has been applied have been used as support members for semiconductor elements.
- noble metal plating such as silver plating has been applied
- copper lead frames and copper substrates have been used to reduce manufacturing costs.
- a resin composition used for a die attach paste or the like is required to effectively maintain the conductivity of a filler in which a conductive material is coated on the surface of an insulating core material.
- the pot life of the resin composition is required to be maintained appropriately.
- it is required to have excellent adhesion to a substrate made of copper or the like and not to peel off the cured product in a high temperature process.
- the present invention has been made from the above viewpoint, and an object thereof is to provide a resin composition capable of maintaining an appropriate pot life while effectively maintaining the conductivity of a filler. Moreover, it aims at providing the resin composition which was excellent in the adhesive strength to a board
- the present invention can be suitably applied particularly when the support member is a copper or resin substrate.
- the present invention [1] (A) a filler having a conductive material on the surface of the insulating core material; (B) a thermosetting resin; (C) a curing agent; (D) It is related with the resin composition containing a thioether type compound.
- the conductive material in (A) is at least one conductive material selected from the group consisting of silver, gold, copper, palladium and alloys thereof. It relates to the resin composition described.
- the present invention [3] relates to the resin composition according to the present invention [1] or [2], wherein (D) is a thioether compound having a diester structure and / or a thioether compound having a benzene ring.
- the present invention [4] further comprises (E) (E1) a metal salt of an organic acid having a boiling point of 200 ° C. or higher, and / or (E2) an organic acid having a boiling point of 200 ° C. or higher and metal particles and / or metal oxide particles. And the resin composition according to any one of [1] to [3] of the present invention.
- (E1) is a metal salt of an organic acid selected from the group consisting of 2-ethylhexanoic acid, naphthenic acid and cyclopentanecarboxylic acid
- (E2) is 2-ethylhexanoic acid.
- the present invention relates to the resin composition according to the present invention [4], which is a combination of an organic acid selected from the group consisting of xanthic acid, naphthenic acid and cyclopentanecarboxylic acid and metal particles and / or metal oxide particles.
- the present invention [6] is a salt in which the metal salt in (E1) is selected from the group consisting of zinc salt, cobalt salt, nickel salt, magnesium salt, manganese salt and tin salt,
- the metal salt in (E1) is selected from the group consisting of zinc salt, cobalt salt, nickel salt, magnesium salt, manganese salt and tin salt
- the resin composition of the present invention [5] wherein the metal particles and / or metal oxide particles in (E2) are particles selected from the group consisting of zinc, cobalt, nickel, magnesium, manganese, tin and oxides thereof.
- (D) is 0.05 to 1.5 parts by mass with respect to a total of 100 parts by mass of (A) to (C).
- the present invention relates to any one of the resin compositions.
- the invention [8] is any one of the inventions [4] to [7], wherein (E) is 0.1 to 5 parts by mass with respect to a total of 100 parts by mass of (A) to (E). It relates to the resin composition described in 1.
- the present invention [9] relates to a die attach paste containing the resin composition of any one of the present invention [1] to [8].
- the present invention [10] relates to an adhesive for a heat radiating member comprising the resin composition of any one of the present invention [1] to [8].
- the present invention [11] relates to a semiconductor device produced using the die attach paste of the present invention [9].
- the present invention [12] relates to a semiconductor device manufactured using the adhesive for heat dissipation member of the present invention [10].
- the present invention [13] relates to the semiconductor device of the present invention [11], wherein the surface to which the die attach paste is applied is copper.
- the present invention [14] relates to the semiconductor device according to the present invention [12], wherein the surface to which the heat radiating member adhesive is applied is copper.
- the resin composition of the present invention includes (A) a filler having a conductive substance on the surface of an insulating core material, and (D) a thioether compound.
- hydroperoxide generated in a high-temperature process such as solder reflow can be decomposed.
- Hydroperoxide is a substance that can promote deterioration of a cured product. Therefore, since the deterioration of the cured product is suppressed, the resin composition of the present invention has excellent adhesion to the support member surface.
- thermosetting resins such as an epoxy resin
- the conductivity can be maintained, (2) an appropriate pot life can be maintained, (3) the adhesive strength is excellent, and (4) the cured product is peeled off in a high temperature process. The effect that it can suppress is obtained. Therefore, the resin composition of the present invention can be suitably applied to a die attach paste or a heat radiating member adhesive.
- the semiconductor device manufactured using the resin composition of the present invention has excellent resistance to moisture reflow and has high reliability. Furthermore, since the resin composition of this invention can exhibit these effects also when a supporting member is copper, its usefulness is high.
- the resin composition of the present invention is (A) a filler having a conductive material on the surface of the insulating core material; (B) a thermosetting resin; (C) a curing agent; (D) including a thioether compound.
- (A) Filler having conductive material on surface of insulating core material The conductivity of the cured product made of the resin composition according to the present invention is obtained by the conductive material on the surface of the filler.
- the insulating core material include particles of silica, alumina, titania, zirconia, glass, silicon carbide, aluminum nitride, and boron nitride.
- the insulating core material is preferably alumina or silica particles.
- the filler used in the resin composition of the present invention has a conductive substance on the surface of the insulating core material.
- the conductive material is preferably coated on the surface of the core material.
- Examples of the conductive substance include metals having a standard electrode potential of 0 V or higher, or alloys thereof. By using a metal having a standard electrode potential of 0 V or more, the influence of (A) is reduced by the organic acid component contained in (E) described later.
- Examples of metals having a standard electrode potential of 0 V or more include silver, gold, copper, and palladium.
- the conductive material is preferably at least one selected from the group consisting of silver, gold, copper, palladium, and alloys thereof.
- the conductive substance is preferably silver or an alloy containing silver. Examples of the alloy include an alloy containing at least one selected from silver, gold, copper, and palladium.
- the alloy is, for example, an alloy containing silver and copper, or an alloy containing silver and tin.
- the surface of the filler core material may be coated with a conductive substance.
- the coverage of the conductive material is not particularly limited, but is preferably 10 to 70% by mass, and more preferably 20 to 60% by mass with respect to 100% by mass of the whole filler.
- the “covering ratio of the conductive substance” means the ratio of the mass of the conductive substance to the total mass of the filler.
- the shape of the filler is not particularly limited. Examples of the shape of the filler include a spherical shape and a flake shape. The shape of the filler is preferably a flake shape.
- the average particle size of the filler is preferably 0.05 to 50 ⁇ m, more preferably 0.1 to 40 ⁇ m, and further preferably 0.5 to 25 ⁇ m.
- the average particle diameter means a volume-based median diameter measured by a laser diffraction method.
- (A) may be used alone or in combination of two or more.
- thermosetting resin (B) Although a thermosetting resin is not specifically limited, It is preferable that it is liquid at room temperature (25 degreeC). Examples of thermosetting resins include epoxy resins, (meth) acrylic resins, and maleimide resins.
- An epoxy resin is a compound having one or more glycidyl groups in the molecule.
- the epoxy resin is a resin that can be cured by forming a three-dimensional network structure by reaction of a glycidyl group by heating. It is preferable that two or more glycidyl groups are contained in one molecule from the viewpoint of cured product characteristics.
- epoxy resin examples include bisphenol compounds such as bisphenol A, bisphenol F, and biphenol or derivatives thereof (for example, alkylene oxide adducts), hydrogenated bisphenol A, hydrogenated bisphenol F, hydrogenated biphenol, cyclohexanediol, and cyclohexanedi. Difunctional having an alicyclic structure such as methanol or shidilohexanediethanol or a derivative thereof, and an epoxidized aliphatic diol such as butanediol, hexanediol, octanediol, nonanediol or decanediol, or a derivative thereof.
- bisphenol compounds such as bisphenol A, bisphenol F, and biphenol or derivatives thereof (for example, alkylene oxide adducts)
- hydrogenated bisphenol A hydrogenated bisphenol F
- hydrogenated biphenol hydrogenated biphenol
- cyclohexanediol hydrogenated biphenol
- Epoxy resin trifunctional epoxy resin having trihydroxyphenylmethane skeleton and aminophenol skeleton; phenol novolac resin, cresol novolac resin, phenol aral Le resins, biphenyl aralkyl resins, polyfunctional epoxy resins obtained by epoxidizing a naphthol aralkyl resin and the like, without limitation.
- the epoxy resin is preferably liquid at room temperature (25 ° C.).
- the epoxy resin is preferably liquid at room temperature, alone or in a mixture.
- the epoxy resin can also be made liquid by using a reactive diluent.
- the reactive diluent include monofunctional aromatic glycidyl ethers such as phenyl glycidyl ether and cresyl glycidyl ether, and aliphatic glycidyl ethers.
- the (meth) acrylic resin can be used as the thermosetting resin.
- the (meth) acrylic resin can be a compound having a (meth) acryloyl group in the molecule.
- the (meth) acrylic resin can be cured by forming a three-dimensional network structure by the reaction of the (meth) acryloyl group.
- (meth) acrylic resins include methyl (meth) acrylate, ethyl (meth) acrylate, n-butyl (meth) acrylate, isobutyl (meth) acrylate, tertiary butyl (meth) acrylate, isodecyl (meth) acrylate, Lauryl (meth) acrylate, tridecyl (meth) acrylate, cetyl (meth) acrylate, stearyl (meth) acrylate, isoamyl (meth) acrylate, isostearyl (meth) acrylate, behenyl (meth) acrylate, 2-ethylhexyl (meth) acrylate , Other alkyl (meth) acrylates, cyclohexyl (meth) acrylate, tertiary butyl cyclohexyl (meth) acrylate, tetrahydrofurfuryl (meth)
- N, N'-methylenebis (meth) acrylamide, N, N'-ethylenebis (meth) acrylamide, (meth) acrylamide of 1,2-di (meth) acrylamide ethylene glycol can also be used. It is also possible to use vinyl compounds such as n-vinyl-2-pyrrolidone, styrene derivatives, ⁇ -methylstyrene derivatives and the like.
- Poly (meth) acrylate can be used as the (meth) acrylic resin.
- the poly (meth) acrylate is preferably a copolymer of (meth) acrylic acid and (meth) acrylate, or a copolymer of (meth) acrylate having a hydroxyl group and (meth) acrylate having no polar group. .
- Examples of (meth) acrylic resins include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 3-hydroxypropyl (meth) acrylate, 2-hydroxybutyl (meth) acrylate, 3-hydroxybutyl ( (Meth) acrylate, 4-hydroxybutyl (meth) acrylate, 1,2-cyclohexanediol mono (meth) acrylate, 1,3-cyclohexanediol mono (meth) acrylate, 1,4-cyclohexanediol mono (meth) acrylate, 1 , 2-cyclohexanedimethanol mono (meth) acrylate, 1,3-cyclohexanedimethanol mono (meth) acrylate, 1,4-cyclohexanedimethanol mono (meth) acrylate, 1,2-cyclohexanedi Tanol mono (meth) acrylate, 1,3-cyclohexanediethanol mono
- (Meth) acrylates and (meth) acrylates having carboxy groups obtained by reacting (meth) acrylates having these hydroxyl groups with dicarboxylic acids or their derivatives It is also possible to use and the like.
- dicarboxylic acid usable here include oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, maleic acid, fumaric acid, phthalic acid, and tetrahydrophthalic acid.
- examples include acids, hexahydrophthalic acid, and derivatives thereof.
- Maleimide resin can be used as the thermosetting resin.
- Maleimide resin is a compound containing one or more maleimide groups in one molecule.
- the maleimide resin can be cured by forming a three-dimensional network structure by the reaction of the maleimide group by heating.
- maleimide resins include N, N ′-(4,4′-diphenylmethane) bismaleimide, bis (3-ethyl-5-methyl-4-maleimidophenyl) methane, 2,2-bis [4- (4- And bismaleimide resins such as maleimidophenoxy) phenyl] propane.
- maleimide resins are compounds obtained by reaction of dimer acid diamine and maleic anhydride, and compounds obtained by reaction of maleimidated amino acids such as maleimide acetic acid and maleimide caproic acid with polyols.
- Maleimidated amino acids can be obtained by reacting maleic anhydride with aminoacetic acid or aminocaproic acid.
- polyol polyether polyol, polyester polyol, polycarbonate polyol, and poly (meth) acrylate polyol are preferable, and those that do not contain an aromatic ring are particularly preferable. Since the maleimide group can react with the allyl group, the combined use with an allyl ester resin is also preferable.
- the allyl ester resin is preferably an aliphatic one, and particularly preferred is a compound obtained by transesterification of a cyclohexane diallyl ester and an aliphatic polyol.
- the resin composition of the present invention contains a curing agent.
- the curing agent include aliphatic amines, aromatic amines, dicyandiamide, dihydrazide compounds, acid anhydrides, and phenol resins.
- these curing agents can be suitably used.
- aliphatic amines examples include diethylenetriamine, triethylenetetraamine, tetraethylenepentamine, trimethylhexamethylenediamine, m-xylenediamine, 2-methylpentamethylenediamine, and other aliphatic polyamines, isophoronediamine, 1,3- Alicyclic polyamines such as bisaminomethylcyclohexane, bis (4-aminocyclohexyl) methane, norbornenediamine, 1,2-diaminocyclohexane, N-aminoethylpiperazine, 1,4-bis (2-amino-2-methylpropyl) ) Piperazine type polyamines such as piperazine.
- 1,3- Alicyclic polyamines such as bisaminomethylcyclohexane, bis (4-aminocyclohexyl) methane, norbornenediamine, 1,2-diaminocyclohexane, N-aminoethylpiperaz
- aromatic amines include aromatic polyamines such as diaminodiphenylmethane, m-phenylenediamine, diaminodiphenylsulfone, diethyltoluenediamine, trimethylenebis (4-aminobenzoate), polytetramethylene oxide-di-p-aminobenzoate, etc. Etc.
- dihydrazide compounds include carboxylic acid dihydrazides such as adipic acid dihydrazide, dodecanoic acid dihydrazide, isophthalic acid dihydrazide, and p-oxybenzoic acid dihydrazide.
- acid anhydrides examples include phthalic anhydride, tetrahydrophthalic anhydride, hexahydrophthalic anhydride, endomethylenetetrahydrophthalic anhydride, dodecenyl succinic anhydride, a reaction product of maleic anhydride and polybutadiene, maleic anhydride and styrene. And the like.
- a phenol resin the compound which has two or more phenolic hydroxyl groups in 1 molecule from the point of hardened
- the number of phenolic hydroxyl groups is preferably 2-5. When the number of phenolic hydroxyl groups is within this range, the viscosity of the resin composition can be controlled within an appropriate range.
- the number of phenolic hydroxyl groups in one molecule is two or three.
- examples of such compounds include bisphenol F, bisphenol A, bisphenol S, tetramethyl bisphenol A, tetramethyl bisphenol F, tetramethyl bisphenol S, dihydroxy diphenyl ether, dihydroxy benzophenone, tetramethyl biphenol, ethylidene bisphenol, methyl ethylidene bis ( Methylphenol), cyclohexylidenebisphenol, bisphenols such as biphenol and derivatives thereof, trifunctional phenols such as tri (hydroxyphenyl) methane and tri (hydroxyphenyl) ethane and derivatives thereof, phenol novolac, cresol novolac, etc.
- a compound obtained by reacting phenols with formaldehyde which is mainly dinuclear or trinuclear and its derivatives Body, and the like.
- a polymerization initiator such as a thermal radical polymerization initiator
- a (meth) acrylic resin is used as the thermosetting resin
- such a curing agent can be suitably used.
- a well-known thing can be used as a polymerization initiator.
- Specific examples of the thermal radical polymerization initiator include methyl ethyl ketone peroxide, methylcyclohexanone peroxide, methyl acetoacetate peroxide, acetylacetone peroxide, 1,1-bis (t-butylperoxy) 3,3,5-trimethylcyclohexane.
- the resin composition of the present invention can contain a curing accelerator.
- the curing accelerator include imidazoles, triphenylphosphine or tetraphenylphosphine salts.
- 2-methylimidazole, 2-ethylimidazole 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2-phenyl-4,5- Preference is given to imidazole compounds such as dihydroxymethylimidazole, 2-C 11 H 23 -imidazole, adducts of 2-methylimidazole and 2,4-diamino-6-vinyltriazine.
- Modified imidazole compounds can also be used.
- an epoxy-imidazole adduct compound or an acrylate-imidazole adduct compound can be used.
- examples of commercially available epoxy-imidazole adduct compounds include “Amure PN-23” manufactured by Ajinomoto Fine Techno Co., “Amure PN-40” manufactured by the same company, “NovaCure HX-3721” manufactured by Asahi Kasei Co., Ltd., and Fuji Kasei Kogyo Co., Ltd. Examples include “Fujicure FX-1000”.
- Examples of commercially available acrylate-imidazole adduct compounds include “EH2021” manufactured by ADEKA. “Novacure HX-3088” manufactured by Asahi Kasei Corporation can also be used.
- (B) is preferably an epoxy resin and / or a (meth) acrylic resin.
- the amount of the epoxy resin and the (meth) acrylic resin used is preferably 95: 5 to 40:60, more preferably 90:10 to 51:51, by mass ratio (epoxy resin: (meth) acrylic resin). 49.
- curing agent for epoxy resins and a thermal radical polymerization initiator as (C).
- the thioether compound is preferably a secondary antioxidant.
- Antioxidants are generally classified into primary antioxidants (radical scavengers) and secondary antioxidants (peroxide decomposers).
- hydroperoxide generated in a high-temperature process such as solder reflow can be decomposed by using (D) a thioether compound.
- Hydroperoxide is a substance that can promote deterioration of a cured product. Therefore, since the deterioration of the cured product is suppressed, the resin composition of the present invention has excellent adhesion to the support member surface.
- thermosetting resins such as an epoxy resin
- thioether compound examples include dilauryl-3,3′-thiodipropionate, dimyristyl-3,3′-thiodipropionate, distearyl-3,3′-thiodipropionate, ditridecyl-3,3 Examples thereof include thioether compounds having a diester structure such as' -thiodipropionate, and thioether compounds having a benzene ring such as bis (3,5-di-tert-butyl-4-hydroxybenzyl) sulfide. These thioether compounds may be used alone or in combination of two or more.
- Thioether compounds include dilauryl-3,3′-thiodipropionate, dimyristyl-3,3′-thiodipropionate, distearyl-3,3′-thiodipropionate, ditridecyl-3,3′-thio. It is preferably at least one thioether compound selected from the group consisting of dipropionate and bis (3,5-di-tert-butyl-4-hydroxybenzyl) sulfide.
- (E) A metal salt of an organic acid having a boiling point of 200 ° C. or higher and / or (E2) A combination of an organic acid having a boiling point of 200 ° C. or higher and metal particles and / or metal oxide particles (E1)
- An organic acid in a metal salt of an organic acid having a temperature of 200 ° C. or higher has a boiling point of 200 ° C. or higher.
- the organic acid has a boiling point of 200 to 300 ° C., for example. By using an organic acid having a boiling point of 200 ° C. or higher, generation of voids in the heat curing step is suppressed.
- the boiling point is a numerical value under atmospheric pressure.
- the resin composition of the present invention exhibits excellent adhesive strength and suppresses the peeling of the cured product in a high temperature process.
- the resin composition of the present invention by using the (D) thioether compound, hydroperoxide that can promote the deterioration of the cured product can be decomposed. By decomposing the hydroperoxide, it is possible to suppress deterioration of the cured product obtained by curing the resin composition. As a result, the resin composition of the present invention exhibits excellent adhesion to the support member surface.
- the (D) thioether compound sulfidizes copper when copper is present on the surface of the support member.
- the metal portion of (E) suppresses excessive sulfurization of the conductive material on the surface of the filler.
- the metal portion of (E) suppresses excessive sulfidation of the base material (for example, copper) that is the support member.
- the base material for example, copper
- the metal portion of (E) suppresses excessive sulfidation of the base material (for example, copper) that is the support member.
- organic acids include saturated monocarboxylic acids.
- the organic acid is preferably a saturated monocarboxylic acid that is liquid at room temperature (25 ° C.).
- the saturated monocarboxylic acid is, for example, a branched or linear carboxylic acid.
- These carboxylic acids may have an alicyclic group (such as a cyclopentane residue or a cyclohexane residue).
- organic acids include branched saturated monocarboxylic acids such as 2-ethylhexanoic acid and cycloalkane monocarboxylic acids such as cyclopentanecarboxylic acid.
- a mixture of carboxylic acids such as naphthenic acid having a boiling point of 200 ° C. or higher can also be used as the organic acid in (E1).
- the organic acid is preferably 2-ethylhexanoic acid, cyclopentanecarboxylic acid, or naphthenic acid.
- the metal salt in the metal salt of an organic acid having a boiling point of 200 ° C. or higher is, for example, a metal salt having a standard electrode potential of less than 0V.
- metals with a standard electrode potential less than 0V are zinc, cobalt, nickel, magnesium, manganese, and tin.
- these metal salts are zinc salts, cobalt salts, nickel salts, magnesium salts, manganese salts, and tin salts.
- the metal salt is preferably a zinc salt or a cobalt salt.
- Examples of (E1) include zinc 2-ethylhexanoate, cobalt 2-ethylhexanoate, nickel 2-ethylhexanoate, magnesium 2-ethylhexanoate, manganese 2-ethylhexanoate, 2- Tin ethylhexanoate, zinc cyclopentanecarboxylate, cobalt cyclopentanecarboxylate, nickel cyclopentanecarboxylate, magnesium cyclopentanecarboxylate, manganese cyclopentanecarboxylate, tin cyclopentanecarboxylate, zinc naphthenate, cobalt naphthenate, Examples include nickel naphthenate, magnesium naphthenate, manganese naphthenate, and tin naphthenate.
- (E1) is preferably zinc 2-ethylhexanoate, zinc cyclopentanoate, zinc naphthenate, cobalt 2-ethylhexanoate, cobalt cyclopentanoate or cobalt naphthenate.
- the organic acid having a boiling point of 200 ° C. or higher in (E2) the organic acids shown above in relation to (E1) can be used.
- the organic acid in (E2) is preferably 2-ethylhexanoic acid, cyclopentanecarboxylic acid, or naphthenic acid.
- Examples of the metal particles include metal particles having a standard electrode potential of less than 0V.
- the metal particles are, for example, particles of zinc, cobalt, nickel, magnesium, manganese, tin, and alloys thereof.
- Examples of the alloy include an alloy containing at least one selected from zinc, cobalt, nickel, magnesium, manganese, and tin.
- the alloy is, for example, an alloy containing zinc and aluminum, or brass.
- the metal particles are preferably zinc particles, cobalt particles, or zinc alloy particles.
- the support member contains copper it is preferable to use copper or a metal having a higher ionization tendency than copper. Thereby, the outflow of copper from a support member can be prevented. Furthermore, the support member containing copper is protected by the sacrificial oxidation of tin by adding tin particles. Thereby, the shear strength of the die
- Examples of the metal oxide particles include metal oxide particles having a standard electrode potential of less than 0V.
- Examples of the metal oxide particles include zinc, cobalt, nickel, magnesium, manganese, and tin oxide particles.
- the metal oxide particles in (E2) are preferably zinc oxide particles.
- the shape of the metal particles and metal oxide particles in (E2) is not particularly limited, and is, for example, spherical or flake shaped.
- the average particle size of the metal particles and metal oxide particles can be 0.05 to 20 ⁇ m, preferably 0.05 to 15 ⁇ m, and more preferably 0.1 to 8 ⁇ m.
- the average particle diameter means a volume-based median diameter measured by a laser diffraction method.
- (E2) may be a combination of an organic acid having a boiling point of 200 ° C. or higher and a metal particle, a combination of an organic acid having a boiling point of 200 ° C. or higher and a metal oxide particle, or an organic acid having a boiling point of 200 ° C. or higher.
- a combination of metal particles and metal oxide particles may be used.
- (E2) specifically, at least one selected from 2-ethylhexanoic acid, cyclopentanecarboxylic acid and naphthenic acid, and selected from zinc particles, cobalt particles, zinc alloy particles and zinc oxide particles
- 2-ethylhexanoic acid specifically, at least one selected from 2-ethylhexanoic acid, cyclopentanecarboxylic acid and naphthenic acid, and selected from zinc particles, cobalt particles, zinc alloy particles and zinc oxide particles
- the amount of the organic acid having a boiling point of 200 ° C. or higher and the amount of metal particles and / or metal oxide particles used is a mass ratio (organic acid having a boiling point of 200 ° C. or higher: metal particles and / or metal oxide particles. ) Is preferably 10:90 to 90:10, more preferably 20:80 to 60:40.
- (A) can be 40 to 90 parts by mass with respect to 100 parts by mass in total of (A) to (D). From the viewpoint of electrical conductivity, (A) is more preferably 55 to 90 parts by mass, and still more preferably 60 to 88 parts by mass.
- (B) can be 5 to 55 parts by mass with respect to a total of 100 parts by mass of (A) to (D). From the viewpoint of thermosetting, (B) is more preferably 5 to 50 parts by mass, and still more preferably 10 to 40 parts by mass.
- (C) can be 1 to 50 parts by mass with respect to a total of 100 parts by mass of (A) to (D). From the viewpoint of curability, (C) is more preferably 2 to 40 parts by mass, and further preferably 2 to 20 parts by mass.
- (D) can be 0.05 to 1.5 parts by mass with respect to 100 parts by mass in total of (A) to (C).
- (D) is more preferably 0.05 to 1.0 part by mass, and further preferably, from the viewpoint of suppressing storage stability and conductivity decrease due to excessive sulfurization of the conductive material on the surface of the filler. Is 0.05 to 0.75 parts by mass.
- the blending amounts of (A) to (D) are as described above.
- (E) can be 0.1 to 5 parts by mass with respect to 100 parts by mass in total of (A) to (E). From the viewpoint of the effect of suppressing delamination of the cured product in a high temperature process, (E) is more preferably 0.1 to 2 parts by mass, and still more preferably 0.1 to 1 part by mass.
- the resin composition of this invention can contain (F) other components.
- Other components are additives, such as a coupling agent (a silane coupling agent, a titanium coupling agent, etc.), a coloring agent, an antifoamer, surfactant, a polymerization inhibitor, for example.
- the resin composition of the present invention is prepared by mixing components other than (A), kneading these components using a three-roll disperser, then adding (A) and mixing uniformly. be able to.
- the resin composition of the present invention can be suitably used as a die attach paste or an adhesive for a heat radiating member.
- a semiconductor element, a heat radiating member, or the like is mounted on a lead frame, a substrate, or the like to which a die attach paste containing the resin composition of the present invention or a heat radiating member adhesive is applied.
- the die attach paste and the adhesive are heated and cured.
- a semiconductor element, a heat radiating member, etc. can be adhered to a lead frame, a substrate, or the like.
- the heating conditions can be appropriately selected.
- the die attach paste or the adhesive can be heated at a peak temperature of 100 to 200 ° C.
- a semiconductor device can be manufactured through wire bonding and sealing processes.
- the cured product of the resin composition of the present invention has excellent adhesive strength, and the cured product is difficult to peel off in a high temperature process. Further, the cured product of the resin composition of the present invention is prevented from being deteriorated in strength due to moisture absorption in a high temperature process. In particular, when the support member is a copper lead frame, a copper substrate, or a resin substrate, these effects are effectively exhibited.
- the average particle diameter is a volume-based median diameter measured by a laser diffraction method.
- a1 50% by mass Ag-coated alumina particles (average particle size 20 ⁇ m, silver plating thickness 1 ⁇ m)
- a2 30% by mass Ag-coated alumina particles (average particle size 20 ⁇ m, silver plating thickness 1 ⁇ m)
- a3 Tin particles (average particle size 5 ⁇ m)
- b2 neopentyl glycol dimethacrylate
- b3 N-acryloyloxyethyl hexahydrophthalimide
- b4 1,6-hexanediol glycidyl ether
- b5 cyclohexanedimethanol diglycidyl ether
- the resin compositions of Examples and Comparative Examples were produced according to the following procedures (1) to (4).
- (1) b1 to b3 in Tables 1 to 3 were mixed and heated to 100 ° C.
- (2) c1 was added to the mixture obtained in the above (1). After adding c1, the mixture was heated to dissolve c1. After c1 dissolved, the mixture was cooled to room temperature.
- (3) Components other than c2, c3 and a1 to a3 were added to the mixture obtained in (2) above, and mixed uniformly using a stirrer with a stirring blade.
- (4) Further, a1 to a3 were added to the mixture obtained in the above (3) and dispersed using a three-roll disperser.
- the test member subjected to the treatment of (2) was immersed in boiling water for 2 hours.
- the test member subjected to the treatment of (3) was cooled to room temperature in water (not dried). Thereafter, the test member was heated at a solder reflow temperature (270 ° C.).
- the peeling state of the chip on the test member subjected to the treatment of (4) was observed using a scanning ultrasonic microscope manufactured by SONIX. Specifically, the ratio of the adhesion area to the chip area was determined from an image obtained by observation with a microscope. When the adhesion area with respect to the chip area was 80% or more, it was evaluated as “no peeling”. When the adhesion area relative to the chip area was less than 80%, it was evaluated that “there was peeling”.
- the initial viscosity of the prepared resin composition was measured. Specifically, the viscosity (Pa ⁇ s) of the resin composition at 5 rpm and 25 ° C. was measured using an Brookfield E-type rotational viscometer HBDV-2 Pro (using a cone plate and a spindle CP51). Next, the viscosity of the resin composition stored for 48 hours in an environment of 25 ° C. and 50% humidity was measured in the same procedure. The thickening rate (%) of the resin composition was calculated by the following formula.
- Thickening rate (%) 100 ⁇ (viscosity after storage for 48 hours ⁇ initial viscosity) / (initial viscosity)
- the pot life of the resin composition was evaluated using the calculated thickening rate as an index. Specifically, when the viscosity increase rate was less than 25%, the pot life of the resin composition was sufficiently long, and it was evaluated as passing.
- the electrical resistivity ( ⁇ ⁇ m) of a cured product obtained by curing the prepared resin composition was measured. Specifically, a zigzag pattern having a length of 71 mm, a width of 1 mm, and a thickness of 20 ⁇ m was printed on an alumina substrate having a width of 20 mm, a length of 20 mm, and a thickness of 1 mm using the resin composition. A 200 mesh stainless steel screen was used for pattern printing. Next, the temperature around the pattern was raised from room temperature to 150 ° C. over 30 minutes. Next, the external electrode was formed by curing the pattern at 150 ° C. for 60 minutes in the air.
- the thickness of the zigzag pattern was measured with a surface roughness profile measuring machine (product name: Surfcom 1400) manufactured by Tokyo Seimitsu. Specifically, the thickness of the zigzag pattern was obtained from the average of measured values at six points arranged so as to intersect the pattern.
- the electrical resistivity ( ⁇ ⁇ m) of the pattern was measured by the 4-terminal method using an LCR meter. Tables 1 to 3 show the measured electrical resistivity ( ⁇ 10 ⁇ 3 ⁇ ⁇ cm). When the electrical resistivity was less than 10 ⁇ 10 ⁇ 3 ⁇ ⁇ cm, it was evaluated as passing.
- the resin compositions of Examples 1 to 15 include (A) a conductive substance and (D) a thioether compound on the surface of the insulating core material.
- the resin compositions of Examples 1 to 15 hydroperoxide generated in a high temperature process such as solder reflow can be decomposed. Hydroperoxide is a substance that can promote deterioration of a cured product. Accordingly, the resin compositions of Examples 1 to 15 have excellent adhesiveness to the surface of the support member because the deterioration of the cured product is suppressed. As a result, the resin compositions of Examples 1 to 15 were evaluated as “no peeling”.
- the metal portion of (E) suppresses excessive sulfurization of the conductive material on the surface of the filler. To do.
- the metal portion of (E) suppresses excessive sulfidation of the base material (for example, copper) that is the support member. As a result, when the support member contains copper, a decrease in the adhesion of the resin composition to the support member is suppressed.
- (E) removes substances that inhibit the adhesion of the support member surface by using (D) the thioether compound and (E) in combination.
- (D) decomposes hydroperoxide that is generated in a high-temperature process and can accelerate deterioration of the cured product. By these actions, peeling of the cured product is suppressed.
- the resin compositions of Examples 1 to 15 were evaluated as “no peeling”.
- the adhesion area after the hygroscopic high temperature test was 80 to 90%.
- the adhesion area after the hygroscopic high temperature test was 90% or more, and peeling was further suppressed.
- the resin composition which can maintain moderate pot life can be provided, maintaining the electroconductivity of a filler. Moreover, the adhesive strength to a board
- the resin composition of the present invention can be suitably used as a die attach paste or a heat radiating member adhesive. Particularly, in the cured product of the resin composition of the present invention, strength deterioration due to moisture absorption is suppressed.
- a semiconductor device manufactured using the resin composition of the present invention has excellent resistance to moisture reflow and has high reliability. Since the resin composition of the present invention can exhibit these effects even when the support member is copper or resin, it is highly useful.
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Dispersion Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Die Bonding (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
Description
また、剥離防止のために添加されるチオール系化合物によって、樹脂組成物のポットライフが短くなってしまうという課題があった。 In recent years, fillers obtained by coating an insulating core material with a conductive substance have been used in order to reduce the manufacturing cost of die attach paste (Patent Documents 2 to 5). This filler is contained in the resin composition used for the die attach paste. Such a filler in which an insulating core material is coated with a conductive material has a problem in that the conductivity decreases when the conductive material on the surface is attacked.
Moreover, the thiol type compound added for peeling prevention had the subject that the pot life of a resin composition will become short.
(A)絶縁性のコア材の表面に導電性物質を有するフィラーと、
(B)熱硬化性樹脂と、
(C)硬化剤と、
(D)チオエーテル系化合物
を含む樹脂組成物に関する。 The present invention [1]
(A) a filler having a conductive material on the surface of the insulating core material;
(B) a thermosetting resin;
(C) a curing agent;
(D) It is related with the resin composition containing a thioether type compound.
(E2)における金属粒子及び/若しくは金属酸化物粒子が、亜鉛、コバルト、ニッケル、マグネシウム、マンガン、スズ及びこれらの酸化物からなる群より選択される粒子である、本発明〔5〕の樹脂組成物に関する。 The present invention [6] is a salt in which the metal salt in (E1) is selected from the group consisting of zinc salt, cobalt salt, nickel salt, magnesium salt, manganese salt and tin salt,
The resin composition of the present invention [5], wherein the metal particles and / or metal oxide particles in (E2) are particles selected from the group consisting of zinc, cobalt, nickel, magnesium, manganese, tin and oxides thereof. Related to things.
(A)絶縁性のコア材の表面に導電性物質を有するフィラーと、
(B)熱硬化性樹脂と、
(C)硬化剤と、
(D)チオエーテル系化合物
を含む。 The resin composition of the present invention is
(A) a filler having a conductive material on the surface of the insulating core material;
(B) a thermosetting resin;
(C) a curing agent;
(D) including a thioether compound.
本発明に係る樹脂組成物からなる硬化物の導電性は、フィラーの表面の導電性物質によって得られる。
絶縁性のコア材の例としては、シリカ、アルミナ、チタニア、ジルコニア、ガラス、炭化ケイ素、窒化アルミニウム、及び窒化ホウ素の粒子が挙げられる。絶縁性のコア材は、好ましくは、アルミナ又はシリカの粒子である。
本発明の樹脂組成物に用いられるフィラーは、絶縁性のコア材の表面に導電性物質を有している。導電性物質は、コア材の表面に被覆されていることが好ましい。 (A) Filler having conductive material on surface of insulating core material The conductivity of the cured product made of the resin composition according to the present invention is obtained by the conductive material on the surface of the filler.
Examples of the insulating core material include particles of silica, alumina, titania, zirconia, glass, silicon carbide, aluminum nitride, and boron nitride. The insulating core material is preferably alumina or silica particles.
The filler used in the resin composition of the present invention has a conductive substance on the surface of the insulating core material. The conductive material is preferably coated on the surface of the core material.
導電性物質は、銀、金、銅、パラジウム及びこれらの合金からなる群より選択される少なくとも1種であることが好ましい。導電性物質は、銀又は銀を含む合金であることが好ましい。合金の例としては、銀、金、銅及びパラジウムから選ばれる少なくとも1種を含む合金が挙げられる。合金は、例えば、銀及び銅を含む合金や、銀及びスズを含む合金である。 Examples of the conductive substance include metals having a standard electrode potential of 0 V or higher, or alloys thereof. By using a metal having a standard electrode potential of 0 V or more, the influence of (A) is reduced by the organic acid component contained in (E) described later. Examples of metals having a standard electrode potential of 0 V or more include silver, gold, copper, and palladium.
The conductive material is preferably at least one selected from the group consisting of silver, gold, copper, palladium, and alloys thereof. The conductive substance is preferably silver or an alloy containing silver. Examples of the alloy include an alloy containing at least one selected from silver, gold, copper, and palladium. The alloy is, for example, an alloy containing silver and copper, or an alloy containing silver and tin.
フィラーの平均粒子径は、好ましくは0.05~50μmであり、より好ましくは0.1~40μmであり、さらに好ましくは0.5~25μmである。ここで、平均粒子径は、レーザー回折法によって測定した体積基準のメジアン径を意味する。 The shape of the filler is not particularly limited. Examples of the shape of the filler include a spherical shape and a flake shape. The shape of the filler is preferably a flake shape.
The average particle size of the filler is preferably 0.05 to 50 μm, more preferably 0.1 to 40 μm, and further preferably 0.5 to 25 μm. Here, the average particle diameter means a volume-based median diameter measured by a laser diffraction method.
(B)熱硬化性樹脂は、特に限定されないが、室温(25℃)で液状であることが好ましい。熱硬化性樹脂の例としては、エポキシ樹脂、(メタ)アクリル樹脂、マレイミド樹脂が挙げられる。 (B) Thermosetting resin (B) Although a thermosetting resin is not specifically limited, It is preferable that it is liquid at room temperature (25 degreeC). Examples of thermosetting resins include epoxy resins, (meth) acrylic resins, and maleimide resins.
本発明の樹脂組成物は、硬化剤を含む。硬化剤の例としては、脂肪族アミン、芳香族アミン、ジシアンジアミド、ジヒドラジド化合物、酸無水物、フェノール樹脂等が挙げられる。熱硬化性樹脂としてエポキシ樹脂を使用する場合、これらの硬化剤を好適に使用することができる。 (C) Curing agent The resin composition of the present invention contains a curing agent. Examples of the curing agent include aliphatic amines, aromatic amines, dicyandiamide, dihydrazide compounds, acid anhydrides, and phenol resins. When an epoxy resin is used as the thermosetting resin, these curing agents can be suitably used.
ジヒドラジド化合物の例としては、アジピン酸ジヒドラジド、ドデカン酸ジヒドラジド、イソフタル酸ジヒドラジド、p-オキシ安息香酸ジヒドラジド等のカルボン酸ジヒドラジド等が挙げられる。酸無水物の例としては、フタル酸無水物、テトラヒドロ無水フタル酸、ヘキサヒドロ無水フタル酸、エンドメチレンテトラヒドロフタル酸無水物、ドデセニルコハク酸無水物、無水マレイン酸とポリブタジエンの反応物、無水マレイン酸とスチレンの共重合体等が挙げられる。フェノール樹脂としては、硬化物特性の点から、1分子内にフェノール性水酸基を2つ以上有する化合物を使用することができる。好ましいフェノール性水酸基の数は、2~5である。フェノール性水酸基の数がこの範囲であれば、樹脂組成物の粘度を適切な範囲に制御することができる。より好ましい1分子内のフェノール性水酸基の数は、2つまたは3つである。このような化合物の例としては、ビスフェノールF、ビスフェノールA、ビスフェノールS、テトラメチルビスフェノールA、テトラメチルビスフェノールF、テトラメチルビスフェノールS、ジヒドロキシジフェニルエーテル、ジヒドロキシベンゾフェノン、テトラメチルビフェノール、エチリデンビスフェノール、メチルエチリデンビス(メチルフェノール)、シクロへキシリデンビスフェノール、ビフェノールなどのビスフェノール類及びその誘導体、トリ(ヒドロキシフェニル)メタン、トリ(ヒドロキシフェニル)エタン等の3官能のフェノール類及びその誘導体、フェノールノボラック、クレゾールノボラック等のフェノール類とホルムアルデヒドを反応することで得られる化合物で2核体又は3核体がメインのもの及びその誘導体等が挙げられる。 Examples of aliphatic amines include diethylenetriamine, triethylenetetraamine, tetraethylenepentamine, trimethylhexamethylenediamine, m-xylenediamine, 2-methylpentamethylenediamine, and other aliphatic polyamines, isophoronediamine, 1,3- Alicyclic polyamines such as bisaminomethylcyclohexane, bis (4-aminocyclohexyl) methane, norbornenediamine, 1,2-diaminocyclohexane, N-aminoethylpiperazine, 1,4-bis (2-amino-2-methylpropyl) ) Piperazine type polyamines such as piperazine. Examples of aromatic amines include aromatic polyamines such as diaminodiphenylmethane, m-phenylenediamine, diaminodiphenylsulfone, diethyltoluenediamine, trimethylenebis (4-aminobenzoate), polytetramethylene oxide-di-p-aminobenzoate, etc. Etc.
Examples of dihydrazide compounds include carboxylic acid dihydrazides such as adipic acid dihydrazide, dodecanoic acid dihydrazide, isophthalic acid dihydrazide, and p-oxybenzoic acid dihydrazide. Examples of acid anhydrides include phthalic anhydride, tetrahydrophthalic anhydride, hexahydrophthalic anhydride, endomethylenetetrahydrophthalic anhydride, dodecenyl succinic anhydride, a reaction product of maleic anhydride and polybutadiene, maleic anhydride and styrene. And the like. As a phenol resin, the compound which has two or more phenolic hydroxyl groups in 1 molecule from the point of hardened | cured material characteristic can be used. The number of phenolic hydroxyl groups is preferably 2-5. When the number of phenolic hydroxyl groups is within this range, the viscosity of the resin composition can be controlled within an appropriate range. More preferably, the number of phenolic hydroxyl groups in one molecule is two or three. Examples of such compounds include bisphenol F, bisphenol A, bisphenol S, tetramethyl bisphenol A, tetramethyl bisphenol F, tetramethyl bisphenol S, dihydroxy diphenyl ether, dihydroxy benzophenone, tetramethyl biphenol, ethylidene bisphenol, methyl ethylidene bis ( Methylphenol), cyclohexylidenebisphenol, bisphenols such as biphenol and derivatives thereof, trifunctional phenols such as tri (hydroxyphenyl) methane and tri (hydroxyphenyl) ethane and derivatives thereof, phenol novolac, cresol novolac, etc. A compound obtained by reacting phenols with formaldehyde, which is mainly dinuclear or trinuclear and its derivatives Body, and the like.
チオエーテル系化合物は、二次酸化防止剤であることが好ましい。酸化防止剤は、一般に、一次酸化防止剤(ラジカル補足剤)と二次酸化防止剤(過酸化物分解剤)に分類される。 (D) Thioether compound The thioether compound is preferably a secondary antioxidant. Antioxidants are generally classified into primary antioxidants (radical scavengers) and secondary antioxidants (peroxide decomposers).
チオエーテル系化合物は、ジラウリル-3,3’-チオジプロピオネート、ジミリスチル-3,3’-チオジプロピオネート、ジステアリル-3,3’-チオジプロピオネート、ジトリデシル-3,3’-チオジプロピオネート及びビス(3,5-ジ-tert-ブチル-4-ヒドロキシベンジル)スルフィドからなる群より選ばれる少なくとも1種のチオエーテル系化合物であることが好ましい。 Specific examples of the thioether compound include dilauryl-3,3′-thiodipropionate, dimyristyl-3,3′-thiodipropionate, distearyl-3,3′-thiodipropionate, ditridecyl-3,3 Examples thereof include thioether compounds having a diester structure such as' -thiodipropionate, and thioether compounds having a benzene ring such as bis (3,5-di-tert-butyl-4-hydroxybenzyl) sulfide. These thioether compounds may be used alone or in combination of two or more.
Thioether compounds include dilauryl-3,3′-thiodipropionate, dimyristyl-3,3′-thiodipropionate, distearyl-3,3′-thiodipropionate, ditridecyl-3,3′-thio. It is preferably at least one thioether compound selected from the group consisting of dipropionate and bis (3,5-di-tert-butyl-4-hydroxybenzyl) sulfide.
(E1)沸点が200℃以上の有機酸の金属塩における有機酸は、沸点が200℃以上である。有機酸は、例えば、沸点が200~300℃である。沸点が200℃以上の有機酸を使用することにより、加熱硬化工程でのボイドの発生が抑制される。沸点は、大気圧下における数値である。 (E) (E1) A metal salt of an organic acid having a boiling point of 200 ° C. or higher and / or (E2) A combination of an organic acid having a boiling point of 200 ° C. or higher and metal particles and / or metal oxide particles (E1) An organic acid in a metal salt of an organic acid having a temperature of 200 ° C. or higher has a boiling point of 200 ° C. or higher. The organic acid has a boiling point of 200 to 300 ° C., for example. By using an organic acid having a boiling point of 200 ° C. or higher, generation of voids in the heat curing step is suppressed. The boiling point is a numerical value under atmospheric pressure.
(E)は、(A)~(E)の合計100質量部に対して、0.1~5質量部であることができる。高温プロセスでの硬化物の剥離抑制効果の点から、(E)は、より好ましくは、0.1~2質量部であり、さらに好ましくは、0.1~1質量部である。 In the present invention, the blending amounts of (A) to (D) are as described above.
(E) can be 0.1 to 5 parts by mass with respect to 100 parts by mass in total of (A) to (E). From the viewpoint of the effect of suppressing delamination of the cured product in a high temperature process, (E) is more preferably 0.1 to 2 parts by mass, and still more preferably 0.1 to 1 part by mass.
本発明の樹脂組成物は、(F)その他の成分を含有することができる。(F)その他の成分は、例えば、カップリング剤(シランカップリング剤、チタンカップリング剤等)、着色剤、消泡剤、界面活性剤、重合禁止剤等の添加剤である。 (F) Other components The resin composition of this invention can contain (F) other components. (F) Other components are additives, such as a coupling agent (a silane coupling agent, a titanium coupling agent, etc.), a coloring agent, an antifoamer, surfactant, a polymerization inhibitor, for example.
具体的には、本発明の樹脂組成物を含有するダイアタッチペーストや放熱部材用接着剤が適用されたリードフレームや基板等に、半導体素子や放熱部材等をマウントする。次に、ダイアタッチペーストや接着剤を加熱して硬化させる。これにより、半導体素子や放熱部材等を、リードフレームや基板等に接着することができる。加熱の条件は、適宜、選択することができる。例えば、100~200℃のピーク温度で、ダイアタッチペーストや接着剤を加熱することができる。次いで、ワイヤボンディング及び封止の工程を経て、半導体装置を製造することができる。この半導体装置をプリント配線基板上にはんだ実装することにより、各種の電子部品を製造することができる。本発明の樹脂組成物の硬化物は、接着強度に優れており、高温プロセスにおいて硬化物が剥離しにくい。また、本発明の樹脂組成物の硬化物は、高温プロセスにおいて、吸湿によって強度が劣化することが抑制されている。特に、支持部材が、銅リードフレーム、銅基板、あるいは樹脂基板である場合に、これらの効果が有効に発揮される。 The resin composition of the present invention can be suitably used as a die attach paste or an adhesive for a heat radiating member.
Specifically, a semiconductor element, a heat radiating member, or the like is mounted on a lead frame, a substrate, or the like to which a die attach paste containing the resin composition of the present invention or a heat radiating member adhesive is applied. Next, the die attach paste and the adhesive are heated and cured. Thereby, a semiconductor element, a heat radiating member, etc. can be adhered to a lead frame, a substrate, or the like. The heating conditions can be appropriately selected. For example, the die attach paste or the adhesive can be heated at a peak temperature of 100 to 200 ° C. Next, a semiconductor device can be manufactured through wire bonding and sealing processes. Various electronic parts can be manufactured by solder mounting this semiconductor device on a printed wiring board. The cured product of the resin composition of the present invention has excellent adhesive strength, and the cured product is difficult to peel off in a high temperature process. Further, the cured product of the resin composition of the present invention is prevented from being deteriorated in strength due to moisture absorption in a high temperature process. In particular, when the support member is a copper lead frame, a copper substrate, or a resin substrate, these effects are effectively exhibited.
a1:50質量%Agコートアルミナ粒子(平均粒子径20μm、銀メッキ厚さ1μm)
a2:30質量%Agコートアルミナ粒子(平均粒子径20μm、銀メッキ厚さ1μm)
a3:スズ粒子(平均粒子径5μm)
b1:ビスフェノールAプロピレンオキシド付加物のポリグリシジルエーテル(エポキシ当量=320g/eq、水酸基当量=1120)
b2:ネオペンチルグリコールジメタクリレート
b3:N-アクリロイルオキシエチルヘキサヒドロフタルイミド
b4:1,6-ヘキサンジオールグリシジルエーテル
b5:シクロヘキサンジメタノールジグリシジルエーテル
c1:クレゾールノボラック樹脂 水酸基当量=118g/eq 軟化点105~115℃
c2:ノバキュアHX3088(旭化成イ-マテリアルズ社製、マイクロカプセル化イミダゾール)
c3:1,1,3,3-テトラメチルブチルペルオキシ2-エチルヘキサノアート
d1:ジトリデシル-3,3’-チオジプロピオネート
d2:ビス(3,5-ジ-tert-ブチル-4-ヒドロキシベンジル)スルフィド
d3:ジステアリル-3,3’-チオジプロピオネート
d4:2-メルカプトベンゾイミダゾール
d5:ペンタエリスリトールテトラキス(3-メルカプトブチレート)
e1:2-エチルへキサン酸(沸点228℃)
e2:酸化亜鉛粒子(平均粒子径0.60μm)
e3:2-エチルヘキサン酸亜鉛(亜鉛含有量22質量%)
e4:亜鉛粒子(平均粒子径3.7μm)
e5:ナフテン酸コバルト(コバルト含有量8質量%)
e6:ビス(2-エチルヘキサン酸)コバルト(II)(コバルト含有量8質量%)
e7:ナフテン酸(沸点200℃以上)
f1:3-グリシドキシプロピルトリメトキシシラン
f2:ビス(トリエトキシシリルプロピル)テトラスルフィド Each component used in the examples is as follows.
a1: 50% by mass Ag-coated alumina particles (average particle size 20 μm, silver plating thickness 1 μm)
a2: 30% by mass Ag-coated alumina particles (average particle size 20 μm, silver plating thickness 1 μm)
a3: Tin particles (average particle size 5 μm)
b1: Polyglycidyl ether of bisphenol A propylene oxide adduct (epoxy equivalent = 320 g / eq, hydroxyl equivalent = 1120)
b2: neopentyl glycol dimethacrylate b3: N-acryloyloxyethyl hexahydrophthalimide b4: 1,6-hexanediol glycidyl ether b5: cyclohexanedimethanol diglycidyl ether c1: cresol novolac resin hydroxyl group equivalent = 118 g / eq softening point 105- 115 ° C
c2: NovaCure HX3088 (manufactured by Asahi Kasei Materials Co., Ltd., microencapsulated imidazole)
c3: 1,1,3,3-tetramethylbutylperoxy 2-ethylhexanoate d1: ditridecyl-3,3′-thiodipropionate d2: bis (3,5-di-tert-butyl-4-hydroxy Benzyl) sulfide d3: distearyl-3,3′-thiodipropionate d4: 2-mercaptobenzimidazole d5: pentaerythritol tetrakis (3-mercaptobutyrate)
e1: 2-ethylhexanoic acid (boiling point 228 ° C.)
e2: Zinc oxide particles (average particle size 0.60 μm)
e3: Zinc 2-ethylhexanoate (Zinc content 22% by mass)
e4: Zinc particles (average particle size 3.7 μm)
e5: Cobalt naphthenate (cobalt content 8 mass%)
e6: Bis (2-ethylhexanoic acid) cobalt (II) (cobalt content 8 mass%)
e7: Naphthenic acid (boiling point 200 ° C. or higher)
f1: 3-glycidoxypropyltrimethoxysilane f2: bis (triethoxysilylpropyl) tetrasulfide
(1)表1~3のb1~b3を混合し、100℃になるまで加熱した。
(2)上記(1)で得られた混合物に、c1を添加した。c1を添加した後、混合物を加熱してc1を溶解させた。c1が溶解した後、混合物を室温まで冷却した。
(3)上記(2)で得られた混合物に、c2、c3及びa1~a3以外の成分を添加し、撹拌翼付撹拌機を用いて均一に混合した。
(4)さらに、上記(3)で得られた混合物に、a1~a3を添加し、3本ロール分散機を用いて分散させた。a1~a3を分散させた後、c2及びc3を添加し、撹拌翼付撹拌機を用いて均一に混合して、樹脂組成物を得た。
表1~3中、評価の項に記載された数値以外の数値は、質量部を示す。 The resin compositions of Examples and Comparative Examples were produced according to the following procedures (1) to (4).
(1) b1 to b3 in Tables 1 to 3 were mixed and heated to 100 ° C.
(2) c1 was added to the mixture obtained in the above (1). After adding c1, the mixture was heated to dissolve c1. After c1 dissolved, the mixture was cooled to room temperature.
(3) Components other than c2, c3 and a1 to a3 were added to the mixture obtained in (2) above, and mixed uniformly using a stirrer with a stirring blade.
(4) Further, a1 to a3 were added to the mixture obtained in the above (3) and dispersed using a three-roll disperser. After a1 to a3 were dispersed, c2 and c3 were added and mixed uniformly using a stirrer with a stirring blade to obtain a resin composition.
In Tables 1 to 3, numerical values other than those described in the evaluation section indicate parts by mass.
吸湿処理後の樹脂組成物を高温に曝露した時に発生する剥離を観察した。観察は、下記の手順(1)~(5)に従って行った。
(1)3mm×3mmのシリコンチップを、実施例及び比較例の各樹脂組成物を用いて、銅リードフレーム上にマウントし、試験部材を得た。その後、試験部材の周囲を室温から175℃に30分かけて昇温し、175℃で30分間保持し、樹脂組成物を硬化させた。これにより、シリコンチップを銅リードフレーム上に接着させた。
(2)チップがエポキシモールディングコンパウンドにて被覆されることを想定して、一般的なエポキシモールディングコンパウンドの硬化条件(175℃、4時間)によって、(1)の処理を行った試験部材を加熱した。
(3)(2)の処理を行った試験部材を、沸騰水中に2時間浸した。
(4)(3)の処理を行った試験部材を、水中(乾燥させない状態)で室温まで冷却した。その後、この試験部材を、はんだリフロー温度(270℃)にて加熱した。
(5)(4)の処理を行った試験部材上のチップの剥離状態を、SONIX社製の走査型超音波顕微鏡を用いて観察した。具体的には、顕微鏡による観察によって得られた画像から、チップ面積に対する接着面積の割合を求めた。チップ面積に対する接着面積が80%以上である場合、「剥離が無い」と評価した。チップ面積に対する接着面積が80%未満である場合、「剥離が有る」と評価した。 1. Peeling after moisture absorption high temperature test Peeling that occurred when the resin composition after moisture absorption treatment was exposed to high temperature was observed. The observation was performed according to the following procedures (1) to (5).
(1) A 3 mm × 3 mm silicon chip was mounted on a copper lead frame using the resin compositions of Examples and Comparative Examples to obtain test members. Thereafter, the temperature around the test member was increased from room temperature to 175 ° C. over 30 minutes and held at 175 ° C. for 30 minutes to cure the resin composition. Thereby, the silicon chip was bonded onto the copper lead frame.
(2) Assuming that the chip is covered with an epoxy molding compound, the test member subjected to the treatment of (1) was heated according to the curing conditions (175 ° C., 4 hours) of a general epoxy molding compound. .
(3) The test member subjected to the treatment of (2) was immersed in boiling water for 2 hours.
(4) The test member subjected to the treatment of (3) was cooled to room temperature in water (not dried). Thereafter, the test member was heated at a solder reflow temperature (270 ° C.).
(5) The peeling state of the chip on the test member subjected to the treatment of (4) was observed using a scanning ultrasonic microscope manufactured by SONIX. Specifically, the ratio of the adhesion area to the chip area was determined from an image obtained by observation with a microscope. When the adhesion area with respect to the chip area was 80% or more, it was evaluated as “no peeling”. When the adhesion area relative to the chip area was less than 80%, it was evaluated that “there was peeling”.
調製した樹脂組成物の初期粘度を測定した。具体的には、ブルックフィールド社製E型回転粘度計HBDV-2 Pro(コーンプレート及びスピンドルCP51を使用)を用いて、5rpm、25℃における樹脂組成物の粘度(Pa・s)を測定した。次に、密閉容器の内部で、25℃、湿度50%の環境にて48時間保管した樹脂組成物の粘度を、同様の手順で測定した。樹脂組成物の増粘率(%)を、以下の式によって算出した。
増粘率(%)=100×(48時間保管後の粘度-初期粘度)/(初期粘度)
算出した増粘率を指標として、樹脂組成物のポットライフを評価した。具体的には、増粘率が25%未満である場合、樹脂組成物のポットライフが十分に長く、合格であると評価した。 2. Pot life (thickening rate)
The initial viscosity of the prepared resin composition was measured. Specifically, the viscosity (Pa · s) of the resin composition at 5 rpm and 25 ° C. was measured using an Brookfield E-type rotational viscometer HBDV-2 Pro (using a cone plate and a spindle CP51). Next, the viscosity of the resin composition stored for 48 hours in an environment of 25 ° C. and 50% humidity was measured in the same procedure. The thickening rate (%) of the resin composition was calculated by the following formula.
Thickening rate (%) = 100 × (viscosity after storage for 48 hours−initial viscosity) / (initial viscosity)
The pot life of the resin composition was evaluated using the calculated thickening rate as an index. Specifically, when the viscosity increase rate was less than 25%, the pot life of the resin composition was sufficiently long, and it was evaluated as passing.
調製した樹脂組成物を硬化させた硬化物の電気抵抗率(Ω・m)を測定した。具体的には、幅20mm、長さ20mm、厚さ1mmのアルミナ基板上に、樹脂組成物を用いて、長さ71mm、幅1mm、厚さ20μmのジグザグパターンを印刷した。パターンの印刷には、200メッシュのステンレス製スクリーンを用いた。次に、パターンの周囲を、室温から150℃に30分間かけて昇温した。次に、パターンを、大気中で、150℃で、60分間硬化させることによって、外部電極を形成した。ジグザグパターンの厚さは、東京精密製表面粗さ形状測定機(製品名:サーフコム1400)にて測定した。具体的には、ジグザグパターンの厚さは、パターンと交差するように配置された6点における測定値の平均より求めた。パターンが硬化した後に、LCRメータを用いて、4端子法でパターンの電気抵抗率(Ω・m)を測定した。表1~3に、測定された電気抵抗率(×10-3Ω・cm)を示す。電気抵抗率が10×10-3Ω・cm未満である場合、合格であると評価した。 3. Measurement of electrical resistivity (Ω · m) The electrical resistivity (Ω · m) of a cured product obtained by curing the prepared resin composition was measured. Specifically, a zigzag pattern having a length of 71 mm, a width of 1 mm, and a thickness of 20 μm was printed on an alumina substrate having a width of 20 mm, a length of 20 mm, and a thickness of 1 mm using the resin composition. A 200 mesh stainless steel screen was used for pattern printing. Next, the temperature around the pattern was raised from room temperature to 150 ° C. over 30 minutes. Next, the external electrode was formed by curing the pattern at 150 ° C. for 60 minutes in the air. The thickness of the zigzag pattern was measured with a surface roughness profile measuring machine (product name: Surfcom 1400) manufactured by Tokyo Seimitsu. Specifically, the thickness of the zigzag pattern was obtained from the average of measured values at six points arranged so as to intersect the pattern. After the pattern was cured, the electrical resistivity (Ω · m) of the pattern was measured by the 4-terminal method using an LCR meter. Tables 1 to 3 show the measured electrical resistivity (× 10 −3 Ω · cm). When the electrical resistivity was less than 10 × 10 −3 Ω · cm, it was evaluated as passing.
上記1~3の評価に基づいて、実施例及び比較例の各樹脂組成物を、以下の基準で総合的に評価した。
○:剥離がなく、ポットライフが合格であり、かつ、電気抵抗率が合格である場合、○と評価した。
×:剥離がある、ポットライフが合格ではない、または、電気抵抗率が合格ではない場合、×と評価した。 4). Comprehensive evaluation Based on the above evaluations 1 to 3, the resin compositions of Examples and Comparative Examples were comprehensively evaluated according to the following criteria.
(Circle): When there was no peeling, pot life passed, and electrical resistivity passed, it evaluated as (circle).
X: When there is peeling, the pot life is not acceptable, or the electrical resistivity is not acceptable, it was evaluated as x.
チオエーテル系化合物の代わりにチオール系化合物を含む比較例2及び3の樹脂組成物は、樹脂組成物を硬化させた硬化物の比抵抗値が増大しており、導電性が低下していた。
また、比較例2及び3の樹脂組成物は、増粘率が上昇しており、適度なポットライフが維持されていなかった。 On the other hand, since the resin composition of Comparative Example 1 did not contain a thioether-based compound, the adhesiveness was lowered, and peeling of the cured product was confirmed.
In the resin compositions of Comparative Examples 2 and 3 containing a thiol compound instead of the thioether compound, the specific resistance value of the cured product obtained by curing the resin composition was increased, and the conductivity was decreased.
Moreover, the resin composition of Comparative Examples 2 and 3 had an increased viscosity increase rate, and an appropriate pot life was not maintained.
本発明の樹脂組成物は、ダイアタッチペースト又は放熱部材用接着剤として好適に用いることができる。
特に、本発明の樹脂組成物の硬化物は、吸湿による強度の劣化が抑制されている。本発明の樹脂組成物を用いて作製された半導体装置は、吸湿リフローに対する耐性に優れており、信頼性が高い。
本発明の樹脂組成物は、支持部材が銅や樹脂である場合にもこれらの効果を発揮できるため、有用性が高い。 ADVANTAGE OF THE INVENTION According to this invention, the resin composition which can maintain moderate pot life can be provided, maintaining the electroconductivity of a filler. Moreover, the adhesive strength to a board | substrate is excellent, and the resin composition in which peeling of the cured | curing material in the high temperature process was suppressed can be provided.
The resin composition of the present invention can be suitably used as a die attach paste or a heat radiating member adhesive.
Particularly, in the cured product of the resin composition of the present invention, strength deterioration due to moisture absorption is suppressed. A semiconductor device manufactured using the resin composition of the present invention has excellent resistance to moisture reflow and has high reliability.
Since the resin composition of the present invention can exhibit these effects even when the support member is copper or resin, it is highly useful.
Claims (14)
- (A)絶縁性のコア材の表面に導電性物質を有するフィラーと、
(B)熱硬化性樹脂と、
(C)硬化剤と、
(D)チオエーテル系化合物
を含むことを特徴とする樹脂組成物。 (A) a filler having a conductive material on the surface of the insulating core material;
(B) a thermosetting resin;
(C) a curing agent;
(D) A resin composition comprising a thioether compound. - (A)における導電性物質が、銀、金、銅、パラジウム及びこれらの合金からなる群より選択される少なくとも1種の導電性物質である、請求項1に記載の樹脂組成物。 The resin composition according to claim 1, wherein the conductive substance in (A) is at least one conductive substance selected from the group consisting of silver, gold, copper, palladium, and alloys thereof.
- (D)が、ジエステル構造を有するチオエーテル化合物及び/又はベンゼン環を有するチオエーテル系化合物である、請求項1又は2に記載の樹脂組成物。 The resin composition according to claim 1 or 2, wherein (D) is a thioether compound having a diester structure and / or a thioether compound having a benzene ring.
- さらに(E)(E1)沸点が200℃以上の有機酸の金属塩、並びに/又は(E2)沸点が200℃以上の有機酸と金属粒子及び/若しくは金属酸化物粒子との組み合わせを含む、請求項1~3のいずれか1項記載の樹脂組成物。 And (E) (E1) a metal salt of an organic acid having a boiling point of 200 ° C. or higher, and / or (E2) a combination of an organic acid having a boiling point of 200 ° C. or higher and metal particles and / or metal oxide particles. Item 4. The resin composition according to any one of Items 1 to 3.
- (E1)が、2-エチルへキサン酸、ナフテン酸及びシクロペンタンカルボン酸からなる群より選択される有機酸の金属塩であり、(E2)が、2-エチルへキサン酸、ナフテン酸及びシクロペンタンカルボン酸からなる群より選択される有機酸と金属粒子及び/若しくは金属酸化物粒子との組み合わせである、請求項4記載の樹脂組成物。 (E1) is a metal salt of an organic acid selected from the group consisting of 2-ethylhexanoic acid, naphthenic acid and cyclopentanecarboxylic acid, and (E2) is 2-ethylhexanoic acid, naphthenic acid and cyclohexane The resin composition according to claim 4, which is a combination of an organic acid selected from the group consisting of pentanecarboxylic acids and metal particles and / or metal oxide particles.
- (E1)における金属塩が、亜鉛塩、コバルト塩、ニッケル塩、マグネシウム塩、マンガン塩及びスズ塩からなる群より選択される塩であり、
(E2)における金属粒子及び/若しくは金属酸化物粒子が、亜鉛、コバルト、ニッケル、マグネシウム、マンガン、スズ及びこれらの酸化物からなる群より選択される粒子である、請求項5記載の樹脂組成物。 The metal salt in (E1) is a salt selected from the group consisting of zinc salt, cobalt salt, nickel salt, magnesium salt, manganese salt and tin salt,
The resin composition according to claim 5, wherein the metal particles and / or metal oxide particles in (E2) are particles selected from the group consisting of zinc, cobalt, nickel, magnesium, manganese, tin, and oxides thereof. . - (D)が、(A)~(C)の合計100質量部に対して、0.05~1.5質量部である、請求項1~6のいずれか1項記載の樹脂組成物。 The resin composition according to any one of claims 1 to 6, wherein (D) is 0.05 to 1.5 parts by mass with respect to 100 parts by mass in total of (A) to (C).
- (E)が、(A)~(E)の合計100質量部に対して、0.1~5質量部である、請求項4~7のいずれか1項記載の樹脂組成物。 The resin composition according to any one of claims 4 to 7, wherein (E) is 0.1 to 5 parts by mass with respect to 100 parts by mass in total of (A) to (E).
- 請求項1~8のいずれか1項記載の樹脂組成物を含むダイアタッチペースト。 A die attach paste comprising the resin composition according to any one of claims 1 to 8.
- 請求項1~8のいずれか1項記載の樹脂組成物を含む放熱部材用接着剤。 An adhesive for a heat radiating member comprising the resin composition according to any one of claims 1 to 8.
- 請求項9記載のダイアタッチペーストを用いて作製された半導体装置。 A semiconductor device manufactured using the die attach paste according to claim 9.
- 請求項10記載の放熱部材用接着剤を用いて作製された半導体装置。 A semiconductor device manufactured using the adhesive for heat dissipation member according to claim 10.
- ダイアタッチペーストを適用した表面が銅である、請求項11記載の半導体装置。 The semiconductor device according to claim 11, wherein the surface to which the die attach paste is applied is copper.
- 放熱部材用接着剤を適用した表面が銅である、請求項12記載の半導体装置。 The semiconductor device according to claim 12, wherein the surface to which the heat radiating member adhesive is applied is copper.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201580045863.3A CN107075258B (en) | 2014-10-01 | 2015-09-30 | Resin composition |
KR1020177009763A KR102325095B1 (en) | 2014-10-01 | 2015-09-30 | Resin composition |
JP2016552147A JPWO2016052664A1 (en) | 2014-10-01 | 2015-09-30 | Resin composition |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014203467 | 2014-10-01 | ||
JP2014-203467 | 2014-10-01 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2016052664A1 true WO2016052664A1 (en) | 2016-04-07 |
Family
ID=55630687
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2015/077852 WO2016052664A1 (en) | 2014-10-01 | 2015-09-30 | Resin composition |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPWO2016052664A1 (en) |
KR (1) | KR102325095B1 (en) |
CN (1) | CN107075258B (en) |
TW (1) | TWI683872B (en) |
WO (1) | WO2016052664A1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018181536A1 (en) * | 2017-03-29 | 2018-10-04 | 日立化成株式会社 | Adhesive composition and structural body |
WO2019198336A1 (en) * | 2018-04-10 | 2019-10-17 | タツタ電線株式会社 | Electroconductive coating material and method for producing shielded package using said electroconductive coating material |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001338529A (en) * | 2000-05-30 | 2001-12-07 | Togo Seisakusho Corp | Conductive resin composition |
JP2009263499A (en) * | 2008-04-24 | 2009-11-12 | Panasonic Electric Works Co Ltd | Thermosetting resin composition and process for producing the same |
WO2014157175A1 (en) * | 2013-03-29 | 2014-10-02 | ナミックス株式会社 | Resin composition |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002008443A (en) | 2000-06-26 | 2002-01-11 | Tokuriki Honten Co Ltd | Thermal hardening type low resistance conductive paste |
US7326369B2 (en) | 2005-03-07 | 2008-02-05 | National Starch And Chemical Investment Holding Corporation | Low stress conductive adhesive |
JP4802667B2 (en) * | 2005-11-08 | 2011-10-26 | 住友金属鉱山株式会社 | Epoxy resin adhesive composition and optical semiconductor adhesive using the same |
KR20110036777A (en) * | 2005-12-26 | 2011-04-08 | 히다치 가세고교 가부시끼가이샤 | Adhesive composition, circuit connecting material and connecting structure of circuit member |
JP5089885B2 (en) * | 2006-01-17 | 2012-12-05 | 太陽ホールディングス株式会社 | Thermal insulation resin composition and printed wiring board using the same |
US20070213429A1 (en) | 2006-03-10 | 2007-09-13 | Chih-Min Cheng | Anisotropic conductive adhesive |
KR101410108B1 (en) * | 2007-05-15 | 2014-06-25 | 히타치가세이가부시끼가이샤 | Circuit-connecting material, and connection structure for circuit member |
JP5266719B2 (en) * | 2007-10-29 | 2013-08-21 | 住友ベークライト株式会社 | Resin composition and semiconductor device produced using resin composition |
WO2009057530A1 (en) * | 2007-10-29 | 2009-05-07 | Sumitomo Bakelite Co., Ltd. | Adhesive composition for semiconductor and semicondutor device produced using the adhesive composition |
JP5651913B2 (en) | 2008-04-21 | 2015-01-14 | スリーボンドファインケミカル株式会社 | Conductive resin composition |
TW201028454A (en) * | 2008-10-22 | 2010-08-01 | Hitachi Chemical Co Ltd | Adhesive film |
CN101778919B (en) * | 2008-10-24 | 2012-09-05 | 住友电木株式会社 | Adhesive composition for semiconductor and semiconductor device manufactured using the same |
JP2011086669A (en) | 2009-10-13 | 2011-04-28 | Asahi Kasei E-Materials Corp | Die bonding paste and semiconductor device using the same |
TWI534256B (en) * | 2011-05-16 | 2016-05-21 | Showa Denko Kk | Hardened heat dissipation composition |
-
2015
- 2015-09-30 JP JP2016552147A patent/JPWO2016052664A1/en active Pending
- 2015-09-30 KR KR1020177009763A patent/KR102325095B1/en active IP Right Grant
- 2015-09-30 WO PCT/JP2015/077852 patent/WO2016052664A1/en active Application Filing
- 2015-09-30 CN CN201580045863.3A patent/CN107075258B/en active Active
- 2015-10-01 TW TW104132361A patent/TWI683872B/en active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001338529A (en) * | 2000-05-30 | 2001-12-07 | Togo Seisakusho Corp | Conductive resin composition |
JP2009263499A (en) * | 2008-04-24 | 2009-11-12 | Panasonic Electric Works Co Ltd | Thermosetting resin composition and process for producing the same |
WO2014157175A1 (en) * | 2013-03-29 | 2014-10-02 | ナミックス株式会社 | Resin composition |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018181536A1 (en) * | 2017-03-29 | 2018-10-04 | 日立化成株式会社 | Adhesive composition and structural body |
CN110461982A (en) * | 2017-03-29 | 2019-11-15 | 日立化成株式会社 | Adhesive composite and structural body |
JPWO2018181536A1 (en) * | 2017-03-29 | 2020-02-06 | 日立化成株式会社 | Adhesive composition and structure |
JP7172990B2 (en) | 2017-03-29 | 2022-11-16 | 昭和電工マテリアルズ株式会社 | Adhesive composition and structure |
WO2019198336A1 (en) * | 2018-04-10 | 2019-10-17 | タツタ電線株式会社 | Electroconductive coating material and method for producing shielded package using said electroconductive coating material |
JPWO2019198336A1 (en) * | 2018-04-10 | 2021-05-20 | タツタ電線株式会社 | Conductive paint and method for manufacturing a shield package using the conductive paint |
JP7266023B2 (en) | 2018-04-10 | 2023-04-27 | タツタ電線株式会社 | Conductive paint and method for manufacturing shield package using conductive paint |
US11912897B2 (en) | 2018-04-10 | 2024-02-27 | Tatsuta Electric Wire & Cable Co., Ltd. | Electroconductive coating material and method for producing shielded package using said electroconductive coating material |
Also Published As
Publication number | Publication date |
---|---|
JPWO2016052664A1 (en) | 2017-07-13 |
CN107075258B (en) | 2020-03-06 |
CN107075258A (en) | 2017-08-18 |
TW201619325A (en) | 2016-06-01 |
KR102325095B1 (en) | 2021-11-11 |
KR20170062475A (en) | 2017-06-07 |
TWI683872B (en) | 2020-02-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6254015B2 (en) | Conductive paste, electrical / electronic component and manufacturing method thereof | |
WO2018225773A1 (en) | Thermally-conductive and electrically-conductive adhesive composition | |
TWI608062B (en) | Resin composition, semiconductor device using said resin composition, and method of producing semiconductor device | |
WO2012118061A1 (en) | Electrically conductive composition | |
JP6310799B2 (en) | Thermosetting resin composition, semiconductor device, electric / electronic component and method for producing plate-type silver fine particles | |
JP5428134B2 (en) | Liquid resin composition and semiconductor device manufactured using the liquid resin composition | |
JPWO2016158828A1 (en) | Resin composition, conductive resin composition, adhesive, conductive adhesive, electrode forming paste, semiconductor device | |
EP2717301A1 (en) | Semiconductor device | |
JP2016219600A (en) | Die attach paste for semiconductor and semiconductor device | |
JP4983166B2 (en) | Resin composition and semiconductor device produced using resin composition | |
JP7100651B2 (en) | Paste compositions, semiconductor devices and electrical / electronic components | |
JP6106007B2 (en) | Resin composition | |
JP2016079215A (en) | Resin composition for semiconductor adhesion and semiconductor device | |
JP6244124B2 (en) | Resin composition for die attach | |
KR102168846B1 (en) | Resin composition | |
JP5396914B2 (en) | Resin composition and semiconductor device manufactured using resin composition | |
JP6069071B2 (en) | Resin composition | |
JP4973120B2 (en) | Method for producing liquid resin composition, liquid resin composition and semiconductor device | |
WO2016052664A1 (en) | Resin composition | |
JP6134597B2 (en) | Die attach agent | |
JP2016117869A (en) | Resin composition for semiconductor adhesion and semiconductor device | |
JP6111535B2 (en) | Thermosetting resin composition, semiconductor device and method for manufacturing semiconductor device | |
JP4961968B2 (en) | Curing accelerator for epoxy resin, epoxy resin composition, and resin composition for electronic material | |
JP4835229B2 (en) | Resin composition and semiconductor device produced using resin composition | |
JP6973768B2 (en) | Inkjet resin composition, electronic components, manufacturing method of electronic components |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 15847448 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2016552147 Country of ref document: JP Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
ENP | Entry into the national phase |
Ref document number: 20177009763 Country of ref document: KR Kind code of ref document: A |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 15847448 Country of ref document: EP Kind code of ref document: A1 |