JPH0589721A - Conductive adheive and bonded body using the same - Google Patents

Conductive adheive and bonded body using the same

Info

Publication number
JPH0589721A
JPH0589721A JP25125991A JP25125991A JPH0589721A JP H0589721 A JPH0589721 A JP H0589721A JP 25125991 A JP25125991 A JP 25125991A JP 25125991 A JP25125991 A JP 25125991A JP H0589721 A JPH0589721 A JP H0589721A
Authority
JP
Japan
Prior art keywords
conductive adhesive
spherical
semiconductor chip
lead frame
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP25125991A
Other languages
Japanese (ja)
Inventor
Takashi Kuroki
貴志 黒木
Hiroki Hirayama
浩樹 平山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Miyazaki Oki Electric Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Miyazaki Oki Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd, Miyazaki Oki Electric Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP25125991A priority Critical patent/JPH0589721A/en
Publication of JPH0589721A publication Critical patent/JPH0589721A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29499Shape or distribution of the fillers

Landscapes

  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)
  • Conductive Materials (AREA)

Abstract

PURPOSE:To provide a conductive adhesive which causes no warpage in a bonded body when a semiconductor chip is bonded on a lead frame via a conductive adhesive layer, as well as the bonded body free of warpage using the conductive adhesive. CONSTITUTION:A conductive adhesive contains silver particles and spherical particles and spherical silica 4 spherical diameter of which is controlled in a filler part, the spherical diameter of the spherical silica 4 being designed to be larger than that of the silver particles. In a bonded body such that a semiconductor chip 1 is bonded to a lead frame 3 by the conductive adhesive, the spherical silica 4 in the conductive adhesive 2 are oriented in one layer, and the film thickness of the conductive adhesive 2 is controlled to a predetermined thickness by the spherical diameter of the spherical silica 4. Therefore, the consumption of the conductive adhesive can be reduced by adjusting the film thickness to the minimum resisting warpage, as well as causing no warpage in the bonded body.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、半導体チップ、特に大
型の半導体チップに用いる導電性接着剤及び導電性接着
剤を使用した接着体に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a conductive adhesive used for semiconductor chips, particularly large-sized semiconductor chips, and an adhesive body using the conductive adhesive.

【0002】[0002]

【従来の技術】導電性接着剤は、半導体工業においては
半導体チップとリードフレームとを主として接続するた
めに使用されており、機械的接続および電気的接続の両
方の役目を果たしている。半導体チップとリードフレー
ムとの接着方法には、導電性接着剤をリードフレーム上
に多点状に塗布し、半導体チップを載置し、半導体チッ
プにスクラブ圧をかけて、導電性接着剤をリードフレー
ムと半導体チップの間に一定の膜厚で広がるようにし、
150〜200℃の温度で1〜2時間硬化させて接着を
行なっていた。
BACKGROUND OF THE INVENTION Conductive adhesives are used primarily in the semiconductor industry to connect semiconductor chips to leadframes and serve both mechanical and electrical connections. To bond the semiconductor chip and the lead frame, a conductive adhesive is applied to the lead frame in multiple points, the semiconductor chip is placed, and a scrub pressure is applied to the semiconductor chip to lead the conductive adhesive. Spread it with a constant thickness between the frame and the semiconductor chip,
It was adhered by curing at a temperature of 150 to 200 ° C. for 1 to 2 hours.

【0003】[0003]

【発明が解決しようとする課題】導電性接着剤に用いら
れる銀ペースト等は高価であるので、半導体チップとリ
ードフレームとの接着において導電性接着剤層の厚みを
必要以上に厚くするとコストが高くつくことになる。し
かし、導電性接着剤層の厚みを薄くし過ぎると、図2の
半導体チップの反りを示す断面図のように、リードフレ
ーム3上に設けられた導電性接着剤層2を介して半導体
チップ1を接着したものは反りを生じていた。
Since the silver paste or the like used for the conductive adhesive is expensive, the cost will increase if the conductive adhesive layer is thicker than necessary in bonding the semiconductor chip and the lead frame. It will be hard. However, when the thickness of the conductive adhesive layer is made too thin, the semiconductor chip 1 is interposed via the conductive adhesive layer 2 provided on the lead frame 3 as shown in the sectional view of the warp of the semiconductor chip in FIG. The one to which was adhered had a warp.

【0004】近年、パッケージを小型化、薄型化とする
ことや、パッケージの薄型化にともなう熱伝導性を重視
するためにリードフレームの材料を銅とすることや、大
型チップを使用することによって、特に、前記した反り
の発生の問題が生じていた。そこで、本発明は、リード
フレーム上に半導体チップを導電性接着剤層を介して接
着したときに、反りの発生のない接着体を提供すること
を目的とする。また、本発明は、その接着剤を使用した
反りのない接着体を提供することを目的とする。
In recent years, by making a package smaller and thinner, using a lead frame material of copper in order to attach importance to thermal conductivity due to the thinner package, and using a large chip, In particular, the above-mentioned problem of warpage has occurred. Therefore, it is an object of the present invention to provide an adhesive body that does not warp when a semiconductor chip is bonded onto a lead frame via a conductive adhesive layer. Moreover, this invention aims at providing the adhesive body which does not warp using the adhesive agent.

【0005】[0005]

【課題を解決するための手段】前記問題点を解決するた
めに、本発明の導電性接着剤は、接着剤中の粒子成分で
あるフィラー部に銀粒子及び球径のコントロールされた
球状シリカを含み、球状シリカの球径を銀粒子の球径よ
りも大きくしたものである。また、本発明は、リードフ
レームと半導体チップとが導電性接着剤層を介して接着
された接着体において、導電性接着剤層中に球状シリカ
が一層になるように含まれていることを特徴とする導電
性接着剤を使用した接着体とするものである。
In order to solve the above-mentioned problems, the conductive adhesive of the present invention comprises silver particles and spherical silica having a controlled spherical diameter in the filler portion which is a particle component in the adhesive. The spherical diameter of the spherical silica is larger than that of the silver particles. Further, the present invention is characterized in that, in a bonded body in which a lead frame and a semiconductor chip are bonded to each other via a conductive adhesive layer, spherical silica is contained in the conductive adhesive layer so as to form one layer. An adhesive body using a conductive adhesive as defined below.

【0006】[0006]

【作用】本発明によれば、導電性接着剤は、フィラー部
に銀粒子及び球径のコントロールされた球状シリカを含
み、球状シリカの球径を銀粒子の球径よりも大きくした
ので、球状シリカの球径により導電性接着剤層の厚みを
一定にコントロールすることができる。したがって、I
Cチップを導電性接着剤層を介してリードフレームに接
着した接着体は、導電性接着剤層の適切な厚さにコント
ロールすることができ、接着体に反りが発生しない。
According to the present invention, the conductive adhesive contains silver particles and spherical silica having a controlled spherical diameter in the filler portion, and the spherical diameter of the spherical silica is made larger than that of the silver particles. The thickness of the conductive adhesive layer can be controlled to be constant by the spherical diameter of silica. Therefore, I
The adhesive body in which the C chip is adhered to the lead frame via the conductive adhesive layer can be controlled to have an appropriate thickness of the conductive adhesive layer, and the adhesive body does not warp.

【0007】[0007]

【実施例1】リードフレーム3上に半導体チップ1を導
電性接着剤層2を介して接着した接着体の反りの発生に
ついて、材料組成の異なる導電性接着剤を各種用いて、
導電性接着剤層の厚さに対する反りの関係を調べた。こ
の実験に用いた導電性接着剤は、次の3種類の導電性接
着剤(1)、導電性接着剤(2)、導電性接着剤(3)
である。
Example 1 Regarding occurrence of warpage of an adhesive body in which a semiconductor chip 1 is adhered onto a lead frame 3 via a conductive adhesive layer 2, various kinds of conductive adhesives having different material compositions are used,
The relationship of the warp with the thickness of the conductive adhesive layer was investigated. The conductive adhesives used in this experiment were the following three kinds of conductive adhesives (1), conductive adhesives (2), and conductive adhesives (3).
Is.

【0008】導電性接着剤(1)の組成は、主剤にビス
フェノールA系エポキシ樹脂とノボラック系エポキシ樹
脂の混合物を用い、硬化剤にフェノールノボラック樹脂
を用い、溶剤にブチルセロソルブアセテートを用い、反
応性希釈剤にγ−グリシドキシプロピルトリメトキシシ
ランを用い、反応促進剤にテトラフェニルホスホニウム
とテトラフェニルボレートの混合物を用いた。この導電
性接着剤(1)は溶剤タイプとして分類される。
The composition of the electrically conductive adhesive (1) is a mixture of bisphenol A type epoxy resin and novolac type epoxy resin as a main component, phenol novolac resin as a curing agent, butyl cellosolve acetate as a solvent, and reactive dilution. Γ-Glycidoxypropyltrimethoxysilane was used as the agent, and a mixture of tetraphenylphosphonium and tetraphenylborate was used as the reaction accelerator. This conductive adhesive (1) is classified as a solvent type.

【0009】導電性接着剤(2)の組成は、主剤にビス
フェノールA系エポキシ樹脂を用い、硬化剤にアミンを
用い、反応性希釈剤にフェニルグリシジルエーテルを用
い、反応促進剤にイミダゾールを用いた。この導電性接
着剤(2)は硬化剤としてアミン系化合物を用いた無溶
剤タイプとして分類される。導電性接着剤(3)の組成
は、主剤にビスフェノールA系エポキシ樹脂を用い、硬
化剤に酸無水物を用い、反応性希釈剤にフェニルグリシ
ジルエーテルを用い、反応促進剤にオクチル酸亜鉛を用
いた。この導電性接着剤(3)は硬化剤として酸無水物
系化合物を用いた無溶剤タイプとして分類される。
In the composition of the conductive adhesive (2), bisphenol A type epoxy resin was used as the main component, amine was used as the curing agent, phenylglycidyl ether was used as the reactive diluent, and imidazole was used as the reaction accelerator. .. This conductive adhesive (2) is classified as a solventless type using an amine compound as a curing agent. The composition of the conductive adhesive (3) uses bisphenol A-based epoxy resin as the main component, acid anhydride as the curing agent, phenylglycidyl ether as the reactive diluent, and zinc octylate as the reaction accelerator. I was there. This conductive adhesive (3) is classified as a solventless type using an acid anhydride compound as a curing agent.

【0010】これらの導電性接着剤の組成を図3に表に
してまとめた。前記導電性接着剤(1)〜(3)を用い
て作成した、4M−DRAMサイズのリードフレーム3
と半導体チップ1との接着体の反りの実験結果を図4、
図5及び図6に示す。これらの図4、図5及び図6に示
すグラフは、横軸に導電性接着剤層の厚さをとり、縦軸
に反りをリードフレームの周辺部を底面としたとき、中
央部が垂直方向に変形した高さとして示した。これらの
実験データでは、導電性接着剤は導電性接着剤層の膜厚
に応じて垂直方向の変形量に、材料の種類に応じて、差
異があるが、一般的に、図7に示した横軸に導電性接着
剤層の厚さをとり縦軸に反りを垂直方向に変形した高さ
としたグラフでその変形の傾向を示すことができる。す
なわち、導電性接着剤層の厚さが薄いと接着体の変形量
が急激に増大するが、導電性接着剤層の厚さが厚くなる
と変形量が減少し、ある程度の厚さとなるとその変形量
が一定となることが分かる。
The compositions of these conductive adhesives are tabulated in FIG. 4M-DRAM size lead frame 3 prepared using the conductive adhesives (1) to (3)
The experimental results of the warp of the adhesive between the semiconductor chip 1 and the semiconductor chip are shown in FIG.
This is shown in FIGS. In these graphs shown in FIGS. 4, 5 and 6, when the thickness of the conductive adhesive layer is plotted on the horizontal axis and the warp is plotted on the vertical axis with the peripheral portion of the lead frame as the bottom surface, the central portion is in the vertical direction. It was shown as the height which was transformed into. In these experimental data, there is a difference in the amount of deformation of the conductive adhesive in the vertical direction depending on the film thickness of the conductive adhesive layer, and depending on the type of material, but generally, it is shown in FIG. The tendency of the deformation can be shown in a graph in which the horizontal axis represents the thickness of the conductive adhesive layer and the vertical axis represents the warp vertically deformed. That is, when the thickness of the conductive adhesive layer is thin, the amount of deformation of the adhesive body rapidly increases, but when the thickness of the conductive adhesive layer is large, the amount of deformation decreases, and when the thickness becomes a certain amount, the amount of deformation It can be seen that is constant.

【0011】そこで、本発明では、反りの大きさが実際
上問題とならなくなり始めたときの導電性接着剤層の最
小の厚さを採用することが、使用する導電性接着剤の量
を最も少なくすることができ、経済的に有利な手段であ
ることに着眼した。図7においては、導電性接着剤層の
厚さがAμmのときが一番導電性接着剤の量が少なくて
すみ、経済的に有利な厚みである。
Therefore, in the present invention, the use of the minimum thickness of the conductive adhesive layer at the time when the magnitude of the warp starts to become a practical problem does not affect the amount of the conductive adhesive used. It was realized that it can be reduced and it is an economically advantageous means. In FIG. 7, when the thickness of the conductive adhesive layer is A μm, the amount of the conductive adhesive is the smallest, which is economically advantageous.

【0012】しかしながら、導電性接着剤層の厚さをコ
ントロールすることは、従来、導電性接着剤の供給量を
コントロールすることによって行われてきたが、供給量
を微細にコントロールすることは困難である。本発明で
は、導電性接着剤層の厚さをコントロールするのに、導
電性接着剤の粒子成分であるフィラー部に含まれた球径
が一定の大きさにコントロールされた球状シリカを使用
することによって、一定の膜厚にコントロールする。す
なわち、球状シリカの球径を、目的とする導電性接着剤
層の厚さとほぼ同じ値にし、球状シリカが導電性接着剤
層内で重ならないような量の球状シリカを導電性接着剤
に配合する。本発明の導電性接着剤に含まれる銀粒子及
び球状シリカの含有量を次のようにして決定した。
However, the control of the thickness of the conductive adhesive layer has hitherto been carried out by controlling the supply amount of the conductive adhesive, but it is difficult to finely control the supply amount. is there. In the present invention, in order to control the thickness of the conductive adhesive layer, it is possible to use spherical silica in which the spherical diameter contained in the filler portion, which is the particle component of the conductive adhesive, is controlled to a certain size. To control the film thickness to a constant value. That is, the spherical diameter of the spherical silica is set to a value approximately equal to the thickness of the target conductive adhesive layer, and the spherical silica is blended in the conductive adhesive in an amount such that the spherical silica does not overlap in the conductive adhesive layer. To do. The contents of silver particles and spherical silica contained in the conductive adhesive of the present invention were determined as follows.

【0013】図8は、導電性接着剤の銀粒子含有量を横
軸に、体積抵抗率を縦軸にとり、その関係を示したグラ
フである。導電性接着剤に関して、一般的に体積抵抗率
は最低10-3Ω・cm以下であることが必要とされてい
る。したがって、図8からは銀粒子含有量は70重量%
以上にしなければならないことがわかる。球状シリカ
は、導電性接着剤層内で重ならないようにするには、す
なわち、必ず球状シリカを一層とするには、その添加量
を導電性接着剤中に10重量%以下とする。
FIG. 8 is a graph showing the relationship between the silver particle content of the conductive adhesive on the horizontal axis and the volume resistivity on the vertical axis. The volume resistivity of the conductive adhesive is generally required to be at least 10 −3 Ω · cm or less. Therefore, from FIG. 8, the content of silver particles is 70% by weight.
You can see that we have to do the above. In order to prevent the spherical silica from overlapping in the conductive adhesive layer, that is, to make the spherical silica one layer, the addition amount thereof is 10% by weight or less in the conductive adhesive.

【0014】図1は、本実施例のリードフレームと半導
体チップとの接着体を示す。1は半導体チップであり導
電性接着剤層2を介してリードフレーム3と接着されて
いる。図1の円中に図示した部分は、特に導電性接着剤
層2を拡大したものであり、銀粒子、エポキシ樹脂及び
その他の添加剤からなる導電性接着剤層2中に、銀粒子
に比べて径の大きな球状シリカ4が、一層に配列された
状態を示している。
FIG. 1 shows an adhesive body of a lead frame and a semiconductor chip of this embodiment. Reference numeral 1 denotes a semiconductor chip, which is bonded to a lead frame 3 via a conductive adhesive layer 2. The portion shown in the circle in FIG. 1 is an enlarged view of the conductive adhesive layer 2, and in the conductive adhesive layer 2 made of silver particles, epoxy resin and other additives, compared to silver particles. The spherical silica 4 having a large diameter is arranged in a single layer.

【0015】なお、本発明は大型の半導体チップに適用
されるだけではなく、反りの発生を防止できる全てのサ
イズの半導体チップに適用できるものである。
The present invention can be applied not only to large semiconductor chips, but also to all sizes of semiconductor chips capable of preventing warpage.

【0016】[0016]

【発明の効果】以上のように本発明によれば、導電性接
着剤中に球形を一定の大きさにコントロールした球状シ
リカを含有させたので、組立工程における導電性接着剤
層の厚みのバラツキがなくなり、反りのバラツキがない
半導体チップとリードフレームの接着体を得ることがで
きた。
As described above, according to the present invention, since spherical silica whose spherical shape is controlled to a certain size is contained in the conductive adhesive, variations in the thickness of the conductive adhesive layer in the assembly process are caused. It was possible to obtain an adhesive body of the semiconductor chip and the lead frame, in which there was no variation in warpage.

【図面の簡単な説明】[Brief description of drawings]

【図1】本実施例のリードフレームと半導体チップとの
接着体を示す。
FIG. 1 shows an adhesive body of a lead frame and a semiconductor chip of this embodiment.

【図2】半導体チップの反りを示す断面図。FIG. 2 is a sectional view showing a warp of a semiconductor chip.

【図3】本実施例に用いた導電性接着剤の組成を示す。FIG. 3 shows the composition of the conductive adhesive used in this example.

【図4】リードフレームと半導体チップとの接着体の反
りの実験結果を示す。
FIG. 4 shows an experimental result of warpage of an adhesive body between a lead frame and a semiconductor chip.

【図5】リードフレームと半導体チップとの接着体の反
りの実験結果を示す。
FIG. 5 shows an experimental result of warpage of an adhesive body between a lead frame and a semiconductor chip.

【図6】リードフレームと半導体チップとの接着体の反
りの実験結果を示す。
FIG. 6 shows an experimental result of warpage of an adhesive body between a lead frame and a semiconductor chip.

【図7】リードフレームと半導体チップとの接着体の反
りの一般的傾向を示す。
FIG. 7 shows a general tendency of warpage of an adhesive body between a lead frame and a semiconductor chip.

【図8】導電性接着剤の銀含有量と体積抵抗率の関係を
示すグラフ。
FIG. 8 is a graph showing the relationship between the silver content of the conductive adhesive and the volume resistivity.

【符号の説明】[Explanation of symbols]

1 半導体チップ 2 導電性接着剤層 3 リードフレーム 4 球状シリカ 1 Semiconductor Chip 2 Conductive Adhesive Layer 3 Lead Frame 4 Spherical Silica

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 フィラー部に銀粒子及び球径のコントロ
ールされた球状シリカを含み、球状シリカの球径を銀粒
子の球径よりも大きくしたことを特徴とする導電性接着
剤。
1. A conductive adhesive comprising a filler part containing silver particles and spherical silica having a controlled spherical diameter, wherein the spherical silica has a larger spherical diameter than that of the silver particles.
【請求項2】 リードフレームと半導体チップとが導電
性接着剤層を介して接着された接着体において、導電性
接着剤層中に球状シリカが一層になるように含まれてい
ることを特徴とする請求項1記載の導電性接着剤を使用
した接着体。
2. An adhesive body in which a lead frame and a semiconductor chip are adhered via a conductive adhesive layer, wherein the conductive adhesive layer contains spherical silica in a single layer. An adhesive body using the conductive adhesive according to claim 1.
JP25125991A 1991-09-30 1991-09-30 Conductive adheive and bonded body using the same Withdrawn JPH0589721A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25125991A JPH0589721A (en) 1991-09-30 1991-09-30 Conductive adheive and bonded body using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25125991A JPH0589721A (en) 1991-09-30 1991-09-30 Conductive adheive and bonded body using the same

Publications (1)

Publication Number Publication Date
JPH0589721A true JPH0589721A (en) 1993-04-09

Family

ID=17220119

Family Applications (1)

Application Number Title Priority Date Filing Date
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WO2012165416A1 (en) 2011-05-31 2012-12-06 住友ベークライト株式会社 Semiconductor device
WO2012165375A1 (en) 2011-05-31 2012-12-06 住友ベークライト株式会社 Resin composition, semiconductor device using same, and method of manufacturing semiconductor device
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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004327559A (en) * 2003-04-22 2004-11-18 Matsushita Electric Ind Co Ltd Electronic component binder
WO2012165416A1 (en) 2011-05-31 2012-12-06 住友ベークライト株式会社 Semiconductor device
WO2012165375A1 (en) 2011-05-31 2012-12-06 住友ベークライト株式会社 Resin composition, semiconductor device using same, and method of manufacturing semiconductor device
CN103563063A (en) * 2011-05-31 2014-02-05 住友电木株式会社 Resin composition, semiconductor device using same, and method of manufacturing semiconductor device
JPWO2012165375A1 (en) * 2011-05-31 2015-02-23 住友ベークライト株式会社 Resin composition, semiconductor device using the same, and method for manufacturing semiconductor device
TWI608062B (en) * 2011-05-31 2017-12-11 住友電木股份有限公司 Resin composition, semiconductor device using said resin composition, and method of producing semiconductor device
KR20180118802A (en) 2011-05-31 2018-10-31 스미또모 베이크라이트 가부시키가이샤 Semiconductor device
CN111039255A (en) * 2019-12-06 2020-04-21 上海航天控制技术研究所 Method for reducing packaging stress of MEMS (micro-electromechanical system) inertial device and MEMS device
CN111039255B (en) * 2019-12-06 2023-10-20 上海航天控制技术研究所 Method for reducing packaging stress of MEMS inertial device and MEMS device

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