JP2008156222A - カーボンナノチューブ配列の成長方法 - Google Patents
カーボンナノチューブ配列の成長方法 Download PDFInfo
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- JP2008156222A JP2008156222A JP2007326577A JP2007326577A JP2008156222A JP 2008156222 A JP2008156222 A JP 2008156222A JP 2007326577 A JP2007326577 A JP 2007326577A JP 2007326577 A JP2007326577 A JP 2007326577A JP 2008156222 A JP2008156222 A JP 2008156222A
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 101
- 239000002041 carbon nanotube Substances 0.000 title claims abstract description 70
- 229910021393 carbon nanotube Inorganic materials 0.000 title claims abstract description 70
- 238000000034 method Methods 0.000 title claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 23
- 239000007789 gas Substances 0.000 claims abstract description 15
- 239000012159 carrier gas Substances 0.000 claims abstract description 10
- 239000000203 mixture Substances 0.000 claims abstract description 9
- 230000001678 irradiating effect Effects 0.000 claims abstract description 5
- 239000003054 catalyst Substances 0.000 claims description 54
- 230000031700 light absorption Effects 0.000 claims description 18
- YIXJRHPUWRPCBB-UHFFFAOYSA-N magnesium nitrate Chemical compound [Mg+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O YIXJRHPUWRPCBB-UHFFFAOYSA-N 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 229910002804 graphite Inorganic materials 0.000 claims description 6
- 239000010439 graphite Substances 0.000 claims description 6
- MVFCKEFYUDZOCX-UHFFFAOYSA-N iron(2+);dinitrate Chemical compound [Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MVFCKEFYUDZOCX-UHFFFAOYSA-N 0.000 claims description 5
- -1 argon ion Chemical class 0.000 claims description 4
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 4
- 239000001569 carbon dioxide Substances 0.000 claims description 4
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 4
- UFMZWBIQTDUYBN-UHFFFAOYSA-N cobalt dinitrate Chemical compound [Co+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O UFMZWBIQTDUYBN-UHFFFAOYSA-N 0.000 claims description 3
- 229910001981 cobalt nitrate Inorganic materials 0.000 claims description 3
- KBJMLQFLOWQJNF-UHFFFAOYSA-N nickel(ii) nitrate Chemical compound [Ni+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O KBJMLQFLOWQJNF-UHFFFAOYSA-N 0.000 claims description 3
- 238000010304 firing Methods 0.000 claims 2
- 230000003197 catalytic effect Effects 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 description 11
- 239000011358 absorbing material Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000001182 laser chemical vapour deposition Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 229910000608 Fe(NO3)3.9H2O Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- QGUAJWGNOXCYJF-UHFFFAOYSA-N cobalt dinitrate hexahydrate Chemical compound O.O.O.O.O.O.[Co+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O QGUAJWGNOXCYJF-UHFFFAOYSA-N 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
Classifications
-
- D—TEXTILES; PAPER
- D01—NATURAL OR MAN-MADE THREADS OR FIBRES; SPINNING
- D01F—CHEMICAL FEATURES IN THE MANUFACTURE OF ARTIFICIAL FILAMENTS, THREADS, FIBRES, BRISTLES OR RIBBONS; APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OF CARBON FILAMENTS
- D01F9/00—Artificial filaments or the like of other substances; Manufacture thereof; Apparatus specially adapted for the manufacture of carbon filaments
- D01F9/08—Artificial filaments or the like of other substances; Manufacture thereof; Apparatus specially adapted for the manufacture of carbon filaments of inorganic material
- D01F9/12—Carbon filaments; Apparatus specially adapted for the manufacture thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/16—Preparation
- C01B32/162—Preparation characterised by catalysts
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2202/00—Structure or properties of carbon nanotubes
- C01B2202/08—Aligned nanotubes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
- Y10S977/742—Carbon nanotubes, CNTs
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/842—Manufacture, treatment, or detection of nanostructure for carbon nanotubes or fullerenes
- Y10S977/843—Gas phase catalytic growth, i.e. chemical vapor deposition
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Textile Engineering (AREA)
- Composite Materials (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
【解決手段】本発明に係るカーボンナノチューブ配列の成長方法は、基板を提供する第一段階と、前記基板に光吸収層を形成する第二段階と、前記光吸収層に触媒層を形成する第三段階と、カーボンを含むガス及びキャリアガスの混合物を前記触媒層の表面に近接して流す第四段階と、前記触媒層にレーザービームを照射して所定の温度まで加熱させて、前記基板にカーボンナノチューブを成長させる第五段階と、を含む。
【選択図】図1
Description
Claims (9)
- 基板を提供する第一段階と、
前記基板に光吸収層を形成する第二段階と、
前記光吸収層に触媒層を形成する第三段階と、
カーボンを含むガス及びキャリアガスの混合物を前記触媒層の表面に近接して流す第四段階と、
前記触媒層にレーザービームを照射して所定の温度まで加熱させて、前記基板にカーボンナノチューブを成長させる第五段階と、
を含むことを特徴とするカーボンナノチューブ配列の成長方法。 - 前記第二段階は、
カーボンを含む材料を前記基板の表面に塗布するステップと、
窒素ガスの雰囲気において、前記基板を90分間以内で300℃以上まで加熱させるステップと、
所定の時間により前記基板を焼成するステップと、
前記基板を室温まで下げた後、前記基板の表面に光吸収層を塗布するステップと、
を含むことを特徴とする、請求項1に記載のカーボンナノチューブ配列の成長方法。 - カーボンを含む材料は、コロイド黒鉛を含むことを特徴とする、請求項2に記載のカーボンナノチューブ配列の成長方法。
- 前記光吸収層の厚さは1〜20mmにされることを特徴とする、請求項1に記載のカーボンナノチューブ配列の成長方法。
- 前記第三段階は、
触媒の溶液を準備するステップと、
前記光吸収層に前記触媒の溶液を塗布するステップと、
前記触媒の溶液が塗布された前記光吸収層を焼成して触媒層を形成させるステップと、
を含むことを特徴とする、請求項1に記載のカーボンナノチューブ配列の成長方法。 - 前記触媒の溶液は、硝酸マグネシウム、硝酸鉄、硝酸コバルト、硝酸ニッケルのいずれか一種又は多種の混合物からなることを特徴とする、請求項5に記載のカーボンナノチューブ配列の成長方法。
- 前記第四段階では、前記レーザービームは、レーザー発生器としての二酸化炭素レーザー又はアルゴンイオンレーザーにより発生されることを特徴とする、請求項1に記載のカーボンナノチューブ配列の成長方法。
- 前記レーザー発生器は少なくとも一枚の集束レンズを含むことを特徴とする、請求項7に記載のカーボンナノチューブ配列の成長方法。
- 基板にカーボンを含む材料を設置して光吸収層を形成する第一段階と、
前記光吸収層に触媒の溶液を形成して触媒層を形成する第二段階と、
カーボンを含むガス及びキャリアガスの混合物を前記触媒層の表面に近接して流す第三段階と、
前記触媒層にレーザービームを照射して所定の温度まで加熱させて、前記基板にカーボンナノチューブを成長させる第四段階と、
を含むことを特徴とするカーボンナノチューブ配列の成長方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200610157696.4 | 2006-12-20 | ||
CN2006101576964A CN101205059B (zh) | 2006-12-20 | 2006-12-20 | 碳纳米管阵列的制备方法 |
Publications (2)
Publication Number | Publication Date |
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JP2008156222A true JP2008156222A (ja) | 2008-07-10 |
JP4705091B2 JP4705091B2 (ja) | 2011-06-22 |
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Application Number | Title | Priority Date | Filing Date |
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JP2007326577A Active JP4705091B2 (ja) | 2006-12-20 | 2007-12-18 | カーボンナノチューブ配列の成長方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7771698B2 (ja) |
JP (1) | JP4705091B2 (ja) |
CN (1) | CN101205059B (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012508159A (ja) * | 2008-11-18 | 2012-04-05 | ユニバーシティ サインス マレーシア | カーボンナノチューブ(carbonnanotubes,CNTs)を生成するプロセス |
WO2014192955A1 (ja) * | 2013-05-29 | 2014-12-04 | 東京エレクトロン株式会社 | グラフェンの生成方法及びカーボンナノチューブの成長方法 |
JP2014237557A (ja) * | 2013-06-06 | 2014-12-18 | 東京エレクトロン株式会社 | カーボンナノチューブ成長方法 |
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CN101205060B (zh) | 2006-12-20 | 2011-05-04 | 清华大学 | 碳纳米管阵列的制备方法 |
CN101205061B (zh) * | 2006-12-22 | 2011-03-23 | 鸿富锦精密工业(深圳)有限公司 | 碳纳米管阵列的制备方法 |
CN101206980B (zh) * | 2006-12-22 | 2010-04-14 | 清华大学 | 场发射阴极的制备方法 |
CN101206979B (zh) * | 2006-12-22 | 2010-05-19 | 清华大学 | 场发射阴极的制备方法 |
EA019141B1 (ru) * | 2011-09-07 | 2014-01-30 | Федеральное Государственное Бюджетное Учреждение "Научно-Производственный Комплекс "Технологический Центр" Миэт" | Способ формирования массивов углеродных нанотрубок |
CN102534766B (zh) * | 2012-02-28 | 2016-03-09 | 无锡格菲电子薄膜科技有限公司 | 一种快速连续制备大尺寸石墨烯薄膜的装置及其应用 |
US9679773B1 (en) * | 2016-03-14 | 2017-06-13 | Infineon Technologies Ag | Method for thermal annealing and a semiconductor device formed by the method |
CN111380614A (zh) * | 2018-12-29 | 2020-07-07 | 清华大学 | 红外探测器及红外成像仪 |
CN111381300A (zh) * | 2018-12-29 | 2020-07-07 | 清华大学 | 红外光吸收体的制备方法 |
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