JP2007051059A - 単層カーボンナノチューブ配列の成長装置及び単層カーボンナノチューブ配列の成長方法 - Google Patents
単層カーボンナノチューブ配列の成長装置及び単層カーボンナノチューブ配列の成長方法 Download PDFInfo
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 92
- 239000002109 single walled nanotube Substances 0.000 title claims abstract description 61
- 238000000034 method Methods 0.000 title claims abstract description 23
- 239000007789 gas Substances 0.000 claims abstract description 56
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 51
- 239000003054 catalyst Substances 0.000 claims abstract description 46
- 238000010438 heat treatment Methods 0.000 claims abstract description 31
- 239000012495 reaction gas Substances 0.000 claims abstract description 13
- 238000011144 upstream manufacturing Methods 0.000 claims abstract description 8
- 229910002804 graphite Inorganic materials 0.000 claims description 11
- 239000010439 graphite Substances 0.000 claims description 11
- 238000010891 electric arc Methods 0.000 claims description 7
- 230000005674 electromagnetic induction Effects 0.000 claims description 4
- 230000008569 process Effects 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 description 7
- 238000001237 Raman spectrum Methods 0.000 description 6
- 125000004432 carbon atom Chemical group C* 0.000 description 6
- 239000002041 carbon nanotube Substances 0.000 description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical group C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 229910021393 carbon nanotube Inorganic materials 0.000 description 5
- 239000012159 carrier gas Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 239000002048 multi walled nanotube Substances 0.000 description 5
- 229930195733 hydrocarbon Natural products 0.000 description 4
- 150000002430 hydrocarbons Chemical class 0.000 description 4
- 239000002071 nanotube Substances 0.000 description 4
- 238000003491 array Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- 239000005977 Ethylene Substances 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000001241 arc-discharge method Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 229910021404 metallic carbon Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000029058 respiratory gaseous exchange Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- -1 unsaturated carbon ions Chemical class 0.000 description 1
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Abstract
【解決手段】本発明に係る単層カーボンナノチューブ配列の成長装置は、触媒を設置するための反応領域が設けられた反応容器と、少なくとも前記反応領域及び前記触媒の一方に対して加熱をする加熱装置と、該ガスカーボンを前記触媒の上流位置に形成するようにガスカーボンを前記反応容器に導入するガスカーボン供給装置と、カーボンを含むガス及び他の反応ガスを前記反応容器の内に導入する反応ガス供給装置と、を含む。また、本発明は前記単層カーボンナノチューブ配列の成長装置を利用して単層カーボンナノチューブ配列を成長させる方法も提供する。
【選択図】図1
Description
Smalley、「Crystalline Ropes of Metallic Carbon Nanotubes」、Science、1996年、第273巻、第483〜487頁 Journet、「Large−scale Production of Single−walled Carbon Nanotubes by the Electric−arc Technique」、Nature、1997年、第388巻、第756〜758頁 Dai、「Chemical Vapor Deposition of Methane for Single−walled Carbon Nanotubes」、Chemical Physics Letters、1998年、第292巻、第567〜574頁
10 反応容器
12 導入口
14 排気口
30 ガスカーボン供給装置
40 基板
41 反応領域
42 触媒
50 反応ガス供給装置
Claims (4)
- 触媒を設置するための反応領域が設けられた反応容器と、
前記反応領域及び/又は前記触媒を加熱する加熱装置と、
ガスカーボンを前記触媒の上流位置に形成させるように前記反応容器に導入するガスカーボン供給装置と、
カーボンを含むガス及び他の反応ガスを前記反応容器の内に導入する反応ガス供給装置と、
を含むことを特徴とする単層カーボンナノチューブ配列の成長装置。 - 前記加熱装置としてマイクロ波加熱装置、無線周波装置、または電磁気誘導加熱装置のいずれか一つが利用されることを特徴とする、請求項1に記載の単層カーボンナノチューブ配列の成長装置。
- 前記ガスカーボン供給装置は、
電源、レーザー素子、またはアーク放電素子のいずれか一つと、
黒鉛ブロックと、
を含むことを特徴とする、請求項1に記載の単層カーボンナノチューブ配列の成長装置。 - 触媒を前記反応容器内に設置する段階と、
前記反応領域及び/又は前記触媒を所定の温度まで加熱する段階と、
ガスカーボンを前記触媒の上流位置に形成させるように前記反応容器に導入する段階と、
カーボンを含むガスを前記反応容器に導入する段階と、
前記触媒に単層カーボンナノチューブ配列を成長させる段階と、を含むことを特徴とする単層カーボンナノチューブ配列の成長方法。
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CNB2005100367469A CN100418876C (zh) | 2005-08-19 | 2005-08-19 | 碳纳米管阵列制备装置及方法 |
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JP2007051059A true JP2007051059A (ja) | 2007-03-01 |
JP4436821B2 JP4436821B2 (ja) | 2010-03-24 |
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JP (1) | JP4436821B2 (ja) |
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US20090269257A1 (en) | 2009-10-29 |
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