JP2007535812A5 - - Google Patents

Download PDF

Info

Publication number
JP2007535812A5
JP2007535812A5 JP2007510745A JP2007510745A JP2007535812A5 JP 2007535812 A5 JP2007535812 A5 JP 2007535812A5 JP 2007510745 A JP2007510745 A JP 2007510745A JP 2007510745 A JP2007510745 A JP 2007510745A JP 2007535812 A5 JP2007535812 A5 JP 2007535812A5
Authority
JP
Japan
Prior art keywords
anode
conductivity type
conductive
region
dopant concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007510745A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007535812A (ja
JP5172330B2 (ja
Filing date
Publication date
Priority claimed from US10/836,170 external-priority patent/US7095092B2/en
Application filed filed Critical
Publication of JP2007535812A publication Critical patent/JP2007535812A/ja
Publication of JP2007535812A5 publication Critical patent/JP2007535812A5/ja
Application granted granted Critical
Publication of JP5172330B2 publication Critical patent/JP5172330B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2007510745A 2004-04-30 2005-04-06 半導体デバイスおよびその製造方法 Expired - Fee Related JP5172330B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/836,170 US7095092B2 (en) 2004-04-30 2004-04-30 Semiconductor device and method of forming the same
US10/836,170 2004-04-30
PCT/US2005/011276 WO2005111817A2 (en) 2004-04-30 2005-04-06 Semiconductor device and method of forming the same

Publications (3)

Publication Number Publication Date
JP2007535812A JP2007535812A (ja) 2007-12-06
JP2007535812A5 true JP2007535812A5 (enExample) 2008-05-22
JP5172330B2 JP5172330B2 (ja) 2013-03-27

Family

ID=35187641

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007510745A Expired - Fee Related JP5172330B2 (ja) 2004-04-30 2005-04-06 半導体デバイスおよびその製造方法

Country Status (6)

Country Link
US (2) US7095092B2 (enExample)
EP (1) EP1756949A4 (enExample)
JP (1) JP5172330B2 (enExample)
CN (1) CN1947258A (enExample)
TW (1) TWI364057B (enExample)
WO (1) WO2005111817A2 (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7525779B2 (en) * 2004-08-30 2009-04-28 Zi-Ping Chen Diode strings and electrostatic discharge protection circuits
TWI233688B (en) * 2004-08-30 2005-06-01 Ind Tech Res Inst Diode structure with low substrate leakage current and applications thereof
US7466006B2 (en) * 2005-05-19 2008-12-16 Freescale Semiconductor, Inc. Structure and method for RESURF diodes with a current diverter
US7439584B2 (en) * 2005-05-19 2008-10-21 Freescale Semiconductor, Inc. Structure and method for RESURF LDMOSFET with a current diverter
US7180158B2 (en) * 2005-06-02 2007-02-20 Freescale Semiconductor, Inc. Semiconductor device and method of manufacture
WO2007072304A2 (en) * 2005-12-19 2007-06-28 Nxp B.V. Integrated high voltage diode and manufacturing method therefof
US20070200136A1 (en) * 2006-02-28 2007-08-30 Ronghua Zhu Isolated zener diodes
US7633135B2 (en) * 2007-07-22 2009-12-15 Alpha & Omega Semiconductor, Ltd. Bottom anode Schottky diode structure and method
JP4459213B2 (ja) * 2006-11-07 2010-04-28 日本テキサス・インスツルメンツ株式会社 サイリスタの駆動方法
US8168490B2 (en) * 2008-12-23 2012-05-01 Intersil Americas, Inc. Co-packaging approach for power converters based on planar devices, structure and method
JP5534298B2 (ja) * 2009-06-16 2014-06-25 ルネサスエレクトロニクス株式会社 半導体装置
US8198703B2 (en) * 2010-01-18 2012-06-12 Freescale Semiconductor, Inc. Zener diode with reduced substrate current
TWI405250B (zh) * 2010-04-13 2013-08-11 Richtek Technology Corp 半導體元件雜質濃度分布控制方法與相關半導體元件
US8278710B2 (en) 2010-07-23 2012-10-02 Freescale Semiconductor, Inc. Guard ring integrated LDMOS
JP5711646B2 (ja) * 2010-11-16 2015-05-07 株式会社豊田中央研究所 ダイオード
US8629513B2 (en) * 2011-01-14 2014-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. HV interconnection solution using floating conductors
JP5898473B2 (ja) 2011-11-28 2016-04-06 ルネサスエレクトロニクス株式会社 半導体装置
US9391159B2 (en) * 2012-04-03 2016-07-12 Taiwan Semiconductor Manufacturing Company, Ltd. Triple well isolated diode and method of making
US9231120B2 (en) * 2012-06-29 2016-01-05 Freescale Semiconductor, Inc. Schottky diode with leakage current control structures
US9059008B2 (en) * 2012-10-19 2015-06-16 Freescale Semiconductor, Inc. Resurf high voltage diode
JP6120586B2 (ja) * 2013-01-25 2017-04-26 ローム株式会社 ｎチャネル二重拡散ＭＯＳ型トランジスタおよび半導体複合素子
JP2014203851A (ja) * 2013-04-01 2014-10-27 株式会社東芝 半導体装置及びその製造方法
US9601607B2 (en) * 2013-11-27 2017-03-21 Qualcomm Incorporated Dual mode transistor
US9425266B2 (en) * 2014-10-13 2016-08-23 Semiconductor Components Industries, Llc Integrated floating diode structure and method therefor
CN106653835A (zh) * 2015-11-04 2017-05-10 苏州同冠微电子有限公司 一种igbt结构及其背面制造方法
US9748330B2 (en) 2016-01-11 2017-08-29 Semiconductor Component Industries, Llc Semiconductor device having self-isolating bulk substrate and method therefor
US10026728B1 (en) 2017-04-26 2018-07-17 Semiconductor Components Industries, Llc Semiconductor device having biasing structure for self-isolating buried layer and method therefor
US10224323B2 (en) 2017-08-04 2019-03-05 Semiconductor Components Industries, Llc Isolation structure for semiconductor device having self-biasing buried layer and method therefor
US20200194581A1 (en) * 2018-12-18 2020-06-18 Vanguard International Semiconductor Corporation Semiconductor device and method for forming the same

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3648125A (en) 1971-02-02 1972-03-07 Fairchild Camera Instr Co Method of fabricating integrated circuits with oxidized isolation and the resulting structure
US4345163A (en) * 1980-05-15 1982-08-17 Bell Telephone Laboratories, Incorporated Control circuitry for high voltage solid-state switches
US5241210A (en) * 1987-02-26 1993-08-31 Kabushiki Kaisha Toshiba High breakdown voltage semiconductor device
EP0314399A3 (en) * 1987-10-30 1989-08-30 Precision Monolithics Inc. Buried zener diode and method of forming the same
US5414292A (en) * 1993-05-26 1995-05-09 Siliconix Incorporated Junction-isolated floating diode
EP0700089A1 (en) * 1994-08-19 1996-03-06 STMicroelectronics S.r.l. A device for protection against electrostatic discharges on the I/O terminals of a MOS integrated circuit
US5828101A (en) * 1995-03-30 1998-10-27 Kabushiki Kaisha Toshiba Three-terminal semiconductor device and related semiconductor devices
TW417307B (en) * 1998-09-23 2001-01-01 Koninkl Philips Electronics Nv Semiconductor device
JP3275850B2 (ja) * 1998-10-09 2002-04-22 日本電気株式会社 高耐圧ダイオードとその製造方法
JP4065104B2 (ja) * 2000-12-25 2008-03-19 三洋電機株式会社 半導体集積回路装置およびその製造方法
JP2002203956A (ja) 2000-12-28 2002-07-19 Mitsubishi Electric Corp 半導体装置
JP4074074B2 (ja) * 2001-09-17 2008-04-09 株式会社東芝 半導体装置
JP4067346B2 (ja) * 2002-06-25 2008-03-26 三洋電機株式会社 半導体集積回路装置

Similar Documents

Publication Publication Date Title
JP2007535812A5 (enExample)
JP6190206B2 (ja) 半導体装置
US7456484B2 (en) Semiconductor device having IGBT and diode
KR101933244B1 (ko) 절연형 게이트 바이폴라 트랜지스터
US8030730B2 (en) Semiconductor device and manufacturing method thereof
JP5172330B2 (ja) 半導体デバイスおよびその製造方法
JPH10290011A (ja) 絶縁ゲートバイポーラトランジスタ
JPS62189758A (ja) ラッチ・アップ防止性能を改良したラテラル形絶縁ゲート・バイポーラ・トランジスタ
US20090206364A1 (en) Insulated gate bipolar transistor and method of fabricating the same
JP2018517283A5 (enExample)
US8441067B2 (en) Power device with low parasitic transistor and method of making the same
CN101378073A (zh) 绝缘栅双极晶体管及其制造方法
US20090166795A1 (en) Schottky diode of semiconductor device and method for manufacturing the same
US10535765B2 (en) Power semiconductor device
TWI337776B (en) Semiconductor device provided with floating electrode
CN105702674B (zh) 一种静电放电防护装置
KR20130045104A (ko) 반도체 소자의 제조 방법
CN205595331U (zh) 一种新型的静电放电防护装置
JPS63194367A (ja) 半導体装置
TWI282127B (en) Semiconductor element
CN103515449B (zh) 一种具有电荷补偿沟槽肖特基半导体装置及其制备方法
CN118571939B (zh) 能降低接触电阻的功率半导体器件及制备方法
JP2008507838A (ja) 半導体装置及び半導体装置の製造方法
TW201338130A (zh) 垂直式半導體元件及其製造方法
CN100431167C (zh) 双极结型晶体管及其制造方法