CN1947258A - 半导体器件及其形成方法 - Google Patents

半导体器件及其形成方法 Download PDF

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Publication number
CN1947258A
CN1947258A CNA2005800134293A CN200580013429A CN1947258A CN 1947258 A CN1947258 A CN 1947258A CN A2005800134293 A CNA2005800134293 A CN A2005800134293A CN 200580013429 A CN200580013429 A CN 200580013429A CN 1947258 A CN1947258 A CN 1947258A
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CN
China
Prior art keywords
semiconductor device
anode
conductive
region
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2005800134293A
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English (en)
Chinese (zh)
Inventor
祝荣华
阿米塔瓦·鲍斯
维什努·K·凯姆卡
维贾·帕塔萨拉蒂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
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Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of CN1947258A publication Critical patent/CN1947258A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes

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  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
CNA2005800134293A 2004-04-30 2005-04-06 半导体器件及其形成方法 Pending CN1947258A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/836,170 2004-04-30
US10/836,170 US7095092B2 (en) 2004-04-30 2004-04-30 Semiconductor device and method of forming the same

Publications (1)

Publication Number Publication Date
CN1947258A true CN1947258A (zh) 2007-04-11

Family

ID=35187641

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2005800134293A Pending CN1947258A (zh) 2004-04-30 2005-04-06 半导体器件及其形成方法

Country Status (6)

Country Link
US (2) US7095092B2 (enExample)
EP (1) EP1756949A4 (enExample)
JP (1) JP5172330B2 (enExample)
CN (1) CN1947258A (enExample)
TW (1) TWI364057B (enExample)
WO (1) WO2005111817A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103137703A (zh) * 2011-11-28 2013-06-05 瑞萨电子株式会社 半导体器件
CN106653835A (zh) * 2015-11-04 2017-05-10 苏州同冠微电子有限公司 一种igbt结构及其背面制造方法

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* Cited by examiner, † Cited by third party
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TWI233688B (en) * 2004-08-30 2005-06-01 Ind Tech Res Inst Diode structure with low substrate leakage current and applications thereof
US7525779B2 (en) * 2004-08-30 2009-04-28 Zi-Ping Chen Diode strings and electrostatic discharge protection circuits
US7466006B2 (en) * 2005-05-19 2008-12-16 Freescale Semiconductor, Inc. Structure and method for RESURF diodes with a current diverter
US7439584B2 (en) * 2005-05-19 2008-10-21 Freescale Semiconductor, Inc. Structure and method for RESURF LDMOSFET with a current diverter
US7180158B2 (en) * 2005-06-02 2007-02-20 Freescale Semiconductor, Inc. Semiconductor device and method of manufacture
WO2007072304A2 (en) * 2005-12-19 2007-06-28 Nxp B.V. Integrated high voltage diode and manufacturing method therefof
US20070200136A1 (en) * 2006-02-28 2007-08-30 Ronghua Zhu Isolated zener diodes
US7633135B2 (en) * 2007-07-22 2009-12-15 Alpha & Omega Semiconductor, Ltd. Bottom anode Schottky diode structure and method
JP4459213B2 (ja) * 2006-11-07 2010-04-28 日本テキサス・インスツルメンツ株式会社 サイリスタの駆動方法
US8168490B2 (en) 2008-12-23 2012-05-01 Intersil Americas, Inc. Co-packaging approach for power converters based on planar devices, structure and method
JP5534298B2 (ja) * 2009-06-16 2014-06-25 ルネサスエレクトロニクス株式会社 半導体装置
US8198703B2 (en) * 2010-01-18 2012-06-12 Freescale Semiconductor, Inc. Zener diode with reduced substrate current
TWI405250B (zh) * 2010-04-13 2013-08-11 Richtek Technology Corp 半導體元件雜質濃度分布控制方法與相關半導體元件
US8278710B2 (en) 2010-07-23 2012-10-02 Freescale Semiconductor, Inc. Guard ring integrated LDMOS
JP5711646B2 (ja) * 2010-11-16 2015-05-07 株式会社豊田中央研究所 ダイオード
US8629513B2 (en) 2011-01-14 2014-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. HV interconnection solution using floating conductors
US9391159B2 (en) * 2012-04-03 2016-07-12 Taiwan Semiconductor Manufacturing Company, Ltd. Triple well isolated diode and method of making
US9231120B2 (en) * 2012-06-29 2016-01-05 Freescale Semiconductor, Inc. Schottky diode with leakage current control structures
US9059008B2 (en) * 2012-10-19 2015-06-16 Freescale Semiconductor, Inc. Resurf high voltage diode
JP6120586B2 (ja) * 2013-01-25 2017-04-26 ローム株式会社 ｎチャネル二重拡散ＭＯＳ型トランジスタおよび半導体複合素子
JP2014203851A (ja) * 2013-04-01 2014-10-27 株式会社東芝 半導体装置及びその製造方法
US9601607B2 (en) * 2013-11-27 2017-03-21 Qualcomm Incorporated Dual mode transistor
US9425266B2 (en) * 2014-10-13 2016-08-23 Semiconductor Components Industries, Llc Integrated floating diode structure and method therefor
US9748330B2 (en) 2016-01-11 2017-08-29 Semiconductor Component Industries, Llc Semiconductor device having self-isolating bulk substrate and method therefor
US10026728B1 (en) 2017-04-26 2018-07-17 Semiconductor Components Industries, Llc Semiconductor device having biasing structure for self-isolating buried layer and method therefor
US10224323B2 (en) 2017-08-04 2019-03-05 Semiconductor Components Industries, Llc Isolation structure for semiconductor device having self-biasing buried layer and method therefor
US20200194581A1 (en) * 2018-12-18 2020-06-18 Vanguard International Semiconductor Corporation Semiconductor device and method for forming the same

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US3648125A (en) 1971-02-02 1972-03-07 Fairchild Camera Instr Co Method of fabricating integrated circuits with oxidized isolation and the resulting structure
US4345163A (en) * 1980-05-15 1982-08-17 Bell Telephone Laboratories, Incorporated Control circuitry for high voltage solid-state switches
US5241210A (en) * 1987-02-26 1993-08-31 Kabushiki Kaisha Toshiba High breakdown voltage semiconductor device
EP0314399A3 (en) * 1987-10-30 1989-08-30 Precision Monolithics Inc. Buried zener diode and method of forming the same
US5414292A (en) * 1993-05-26 1995-05-09 Siliconix Incorporated Junction-isolated floating diode
EP0700089A1 (en) * 1994-08-19 1996-03-06 STMicroelectronics S.r.l. A device for protection against electrostatic discharges on the I/O terminals of a MOS integrated circuit
US5828101A (en) * 1995-03-30 1998-10-27 Kabushiki Kaisha Toshiba Three-terminal semiconductor device and related semiconductor devices
TW417307B (en) * 1998-09-23 2001-01-01 Koninkl Philips Electronics Nv Semiconductor device
JP3275850B2 (ja) * 1998-10-09 2002-04-22 日本電気株式会社 高耐圧ダイオードとその製造方法
JP4065104B2 (ja) * 2000-12-25 2008-03-19 三洋電機株式会社 半導体集積回路装置およびその製造方法
JP2002203956A (ja) 2000-12-28 2002-07-19 Mitsubishi Electric Corp 半導体装置
JP4074074B2 (ja) * 2001-09-17 2008-04-09 株式会社東芝 半導体装置
JP4067346B2 (ja) * 2002-06-25 2008-03-26 三洋電機株式会社 半導体集積回路装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103137703A (zh) * 2011-11-28 2013-06-05 瑞萨电子株式会社 半导体器件
CN106653835A (zh) * 2015-11-04 2017-05-10 苏州同冠微电子有限公司 一种igbt结构及其背面制造方法

Also Published As

Publication number Publication date
US7095092B2 (en) 2006-08-22
TWI364057B (en) 2012-05-11
US20050245020A1 (en) 2005-11-03
JP2007535812A (ja) 2007-12-06
JP5172330B2 (ja) 2013-03-27
EP1756949A2 (en) 2007-02-28
WO2005111817A2 (en) 2005-11-24
US7476593B2 (en) 2009-01-13
WO2005111817A3 (en) 2006-04-20
TW200609995A (en) 2006-03-16
US20060244081A1 (en) 2006-11-02
EP1756949A4 (en) 2009-07-08

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Open date: 20070411