TWI364057B - Semiconductor device and method of forming the same - Google Patents
Semiconductor device and method of forming the same Download PDFInfo
- Publication number
- TWI364057B TWI364057B TW094113757A TW94113757A TWI364057B TW I364057 B TWI364057 B TW I364057B TW 094113757 A TW094113757 A TW 094113757A TW 94113757 A TW94113757 A TW 94113757A TW I364057 B TWI364057 B TW I364057B
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor device
- region
- conductive
- anode
- cathode
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 50
- 238000000034 method Methods 0.000 title description 7
- 239000002019 doping agent Substances 0.000 claims description 48
- 239000000758 substrate Substances 0.000 claims description 46
- 238000002955 isolation Methods 0.000 claims description 41
- 230000003071 parasitic effect Effects 0.000 claims description 18
- 239000006096 absorbing agent Substances 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- VMGAPWLDMVPYIA-HIDZBRGKSA-N n'-amino-n-iminomethanimidamide Chemical compound N\N=C\N=N VMGAPWLDMVPYIA-HIDZBRGKSA-N 0.000 claims 1
- BOLDJAUMGUJJKM-LSDHHAIUSA-N renifolin D Natural products CC(=C)[C@@H]1Cc2c(O)c(O)ccc2[C@H]1CC(=O)c3ccc(O)cc3O BOLDJAUMGUJJKM-LSDHHAIUSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 description 10
- 239000003989 dielectric material Substances 0.000 description 6
- 238000002513 implantation Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 4
- 239000007943 implant Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 241000238631 Hexapoda Species 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/211—Gated diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
Landscapes
- Element Separation (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/836,170 US7095092B2 (en) | 2004-04-30 | 2004-04-30 | Semiconductor device and method of forming the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200609995A TW200609995A (en) | 2006-03-16 |
| TWI364057B true TWI364057B (en) | 2012-05-11 |
Family
ID=35187641
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094113757A TWI364057B (en) | 2004-04-30 | 2005-04-28 | Semiconductor device and method of forming the same |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US7095092B2 (enExample) |
| EP (1) | EP1756949A4 (enExample) |
| JP (1) | JP5172330B2 (enExample) |
| CN (1) | CN1947258A (enExample) |
| TW (1) | TWI364057B (enExample) |
| WO (1) | WO2005111817A2 (enExample) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7525779B2 (en) * | 2004-08-30 | 2009-04-28 | Zi-Ping Chen | Diode strings and electrostatic discharge protection circuits |
| TWI233688B (en) * | 2004-08-30 | 2005-06-01 | Ind Tech Res Inst | Diode structure with low substrate leakage current and applications thereof |
| US7439584B2 (en) * | 2005-05-19 | 2008-10-21 | Freescale Semiconductor, Inc. | Structure and method for RESURF LDMOSFET with a current diverter |
| US7466006B2 (en) * | 2005-05-19 | 2008-12-16 | Freescale Semiconductor, Inc. | Structure and method for RESURF diodes with a current diverter |
| US7180158B2 (en) * | 2005-06-02 | 2007-02-20 | Freescale Semiconductor, Inc. | Semiconductor device and method of manufacture |
| EP1966829A2 (en) * | 2005-12-19 | 2008-09-10 | Nxp B.V. | Substrate isolated integrated high voltage diode integrated within a unit cell |
| US20070200136A1 (en) * | 2006-02-28 | 2007-08-30 | Ronghua Zhu | Isolated zener diodes |
| US7633135B2 (en) * | 2007-07-22 | 2009-12-15 | Alpha & Omega Semiconductor, Ltd. | Bottom anode Schottky diode structure and method |
| JP4459213B2 (ja) * | 2006-11-07 | 2010-04-28 | 日本テキサス・インスツルメンツ株式会社 | サイリスタの駆動方法 |
| US8168490B2 (en) | 2008-12-23 | 2012-05-01 | Intersil Americas, Inc. | Co-packaging approach for power converters based on planar devices, structure and method |
| JP5534298B2 (ja) * | 2009-06-16 | 2014-06-25 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| US8198703B2 (en) * | 2010-01-18 | 2012-06-12 | Freescale Semiconductor, Inc. | Zener diode with reduced substrate current |
| TWI405250B (zh) * | 2010-04-13 | 2013-08-11 | Richtek Technology Corp | 半導體元件雜質濃度分布控制方法與相關半導體元件 |
| US8278710B2 (en) | 2010-07-23 | 2012-10-02 | Freescale Semiconductor, Inc. | Guard ring integrated LDMOS |
| JP5711646B2 (ja) * | 2010-11-16 | 2015-05-07 | 株式会社豊田中央研究所 | ダイオード |
| US8629513B2 (en) | 2011-01-14 | 2014-01-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | HV interconnection solution using floating conductors |
| JP5898473B2 (ja) | 2011-11-28 | 2016-04-06 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| US9391159B2 (en) * | 2012-04-03 | 2016-07-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Triple well isolated diode and method of making |
| US9231120B2 (en) * | 2012-06-29 | 2016-01-05 | Freescale Semiconductor, Inc. | Schottky diode with leakage current control structures |
| US9059008B2 (en) * | 2012-10-19 | 2015-06-16 | Freescale Semiconductor, Inc. | Resurf high voltage diode |
| JP6120586B2 (ja) * | 2013-01-25 | 2017-04-26 | ローム株式会社 | ｎチャネル二重拡散ＭＯＳ型トランジスタおよび半導体複合素子 |
| JP2014203851A (ja) * | 2013-04-01 | 2014-10-27 | 株式会社東芝 | 半導体装置及びその製造方法 |
| US9601607B2 (en) * | 2013-11-27 | 2017-03-21 | Qualcomm Incorporated | Dual mode transistor |
| US9425266B2 (en) * | 2014-10-13 | 2016-08-23 | Semiconductor Components Industries, Llc | Integrated floating diode structure and method therefor |
| CN106653835A (zh) * | 2015-11-04 | 2017-05-10 | 苏州同冠微电子有限公司 | 一种igbt结构及其背面制造方法 |
| US9748330B2 (en) | 2016-01-11 | 2017-08-29 | Semiconductor Component Industries, Llc | Semiconductor device having self-isolating bulk substrate and method therefor |
| US10026728B1 (en) | 2017-04-26 | 2018-07-17 | Semiconductor Components Industries, Llc | Semiconductor device having biasing structure for self-isolating buried layer and method therefor |
| US10224323B2 (en) | 2017-08-04 | 2019-03-05 | Semiconductor Components Industries, Llc | Isolation structure for semiconductor device having self-biasing buried layer and method therefor |
| US20200194581A1 (en) * | 2018-12-18 | 2020-06-18 | Vanguard International Semiconductor Corporation | Semiconductor device and method for forming the same |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3648125A (en) * | 1971-02-02 | 1972-03-07 | Fairchild Camera Instr Co | Method of fabricating integrated circuits with oxidized isolation and the resulting structure |
| US4345163A (en) * | 1980-05-15 | 1982-08-17 | Bell Telephone Laboratories, Incorporated | Control circuitry for high voltage solid-state switches |
| US5241210A (en) * | 1987-02-26 | 1993-08-31 | Kabushiki Kaisha Toshiba | High breakdown voltage semiconductor device |
| EP0314399A3 (en) * | 1987-10-30 | 1989-08-30 | Precision Monolithics Inc. | Buried zener diode and method of forming the same |
| US5414292A (en) * | 1993-05-26 | 1995-05-09 | Siliconix Incorporated | Junction-isolated floating diode |
| EP0700089A1 (en) * | 1994-08-19 | 1996-03-06 | STMicroelectronics S.r.l. | A device for protection against electrostatic discharges on the I/O terminals of a MOS integrated circuit |
| US5828101A (en) * | 1995-03-30 | 1998-10-27 | Kabushiki Kaisha Toshiba | Three-terminal semiconductor device and related semiconductor devices |
| TW417307B (en) * | 1998-09-23 | 2001-01-01 | Koninkl Philips Electronics Nv | Semiconductor device |
| JP3275850B2 (ja) * | 1998-10-09 | 2002-04-22 | 日本電気株式会社 | 高耐圧ダイオードとその製造方法 |
| JP4065104B2 (ja) * | 2000-12-25 | 2008-03-19 | 三洋電機株式会社 | 半導体集積回路装置およびその製造方法 |
| JP2002203956A (ja) * | 2000-12-28 | 2002-07-19 | Mitsubishi Electric Corp | 半導体装置 |
| JP4074074B2 (ja) * | 2001-09-17 | 2008-04-09 | 株式会社東芝 | 半導体装置 |
| JP4067346B2 (ja) * | 2002-06-25 | 2008-03-26 | 三洋電機株式会社 | 半導体集積回路装置 |
-
2004
- 2004-04-30 US US10/836,170 patent/US7095092B2/en not_active Expired - Lifetime
-
2005
- 2005-04-06 CN CNA2005800134293A patent/CN1947258A/zh active Pending
- 2005-04-06 EP EP05732887A patent/EP1756949A4/en not_active Withdrawn
- 2005-04-06 JP JP2007510745A patent/JP5172330B2/ja not_active Expired - Fee Related
- 2005-04-06 WO PCT/US2005/011276 patent/WO2005111817A2/en not_active Ceased
- 2005-04-28 TW TW094113757A patent/TWI364057B/zh not_active IP Right Cessation
-
2006
- 2006-06-27 US US11/426,815 patent/US7476593B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| TW200609995A (en) | 2006-03-16 |
| JP2007535812A (ja) | 2007-12-06 |
| WO2005111817A3 (en) | 2006-04-20 |
| EP1756949A2 (en) | 2007-02-28 |
| EP1756949A4 (en) | 2009-07-08 |
| CN1947258A (zh) | 2007-04-11 |
| US20050245020A1 (en) | 2005-11-03 |
| US7476593B2 (en) | 2009-01-13 |
| WO2005111817A2 (en) | 2005-11-24 |
| JP5172330B2 (ja) | 2013-03-27 |
| US7095092B2 (en) | 2006-08-22 |
| US20060244081A1 (en) | 2006-11-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |