CN1248298C - 制造半导体整流器件的方法及所得器件 - Google Patents
制造半导体整流器件的方法及所得器件 Download PDFInfo
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- CN1248298C CN1248298C CNB01143693XA CN01143693A CN1248298C CN 1248298 C CN1248298 C CN 1248298C CN B01143693X A CNB01143693X A CN B01143693XA CN 01143693 A CN01143693 A CN 01143693A CN 1248298 C CN1248298 C CN 1248298C
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- 238000000034 method Methods 0.000 title claims description 33
- 239000004065 semiconductor Substances 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 150000002500 ions Chemical class 0.000 claims abstract description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 18
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 17
- 229920005591 polysilicon Polymers 0.000 claims description 17
- 239000012535 impurity Substances 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 230000004888 barrier function Effects 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 230000007797 corrosion Effects 0.000 claims description 6
- 238000005260 corrosion Methods 0.000 claims description 6
- 229940090044 injection Drugs 0.000 claims description 6
- 238000002347 injection Methods 0.000 claims description 6
- 239000007924 injection Substances 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 2
- 239000002800 charge carrier Substances 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 24
- 229920002120 photoresistant polymer Polymers 0.000 description 15
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 11
- 229910052796 boron Inorganic materials 0.000 description 11
- 229910052785 arsenic Inorganic materials 0.000 description 8
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 8
- 239000011229 interlayer Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000000873 masking effect Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000004151 rapid thermal annealing Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000007634 remodeling Methods 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000024241 parasitism Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28123—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
- H01L21/2815—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects part or whole of the electrode is a sidewall spacer or made by a similar technique, e.g. transformation under mask, plating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Rectifiers (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/742,262 US6624030B2 (en) | 2000-12-19 | 2000-12-19 | Method of fabricating power rectifier device having a laterally graded P-N junction for a channel region |
US09/742,262 | 2000-12-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1367528A CN1367528A (zh) | 2002-09-04 |
CN1248298C true CN1248298C (zh) | 2006-03-29 |
Family
ID=24984130
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB01143693XA Expired - Fee Related CN1248298C (zh) | 2000-12-19 | 2001-12-19 | 制造半导体整流器件的方法及所得器件 |
Country Status (2)
Country | Link |
---|---|
US (2) | US6624030B2 (zh) |
CN (1) | CN1248298C (zh) |
Families Citing this family (35)
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JP3730947B2 (ja) * | 2002-10-08 | 2006-01-05 | 松下電器産業株式会社 | 半導体装置の製造方法 |
JP2004319964A (ja) * | 2003-03-28 | 2004-11-11 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
US20050020043A1 (en) * | 2003-07-25 | 2005-01-27 | Jiun-Ren Lai | Methods for reducing cell pitch in semiconductor devices |
US7049669B2 (en) * | 2003-09-15 | 2006-05-23 | Infineon Technologies Ag | LDMOS transistor |
US6825073B1 (en) * | 2003-09-17 | 2004-11-30 | Chip Integration Tech Co., Ltd. | Schottky diode with high field breakdown and low reverse leakage current |
US7064048B2 (en) * | 2003-10-17 | 2006-06-20 | United Microelectronics Corp. | Method of forming a semi-insulating region |
US7075155B1 (en) * | 2004-06-14 | 2006-07-11 | Advanced Micro Devices, Inc. | Structure for protecting a semiconductor circuit from electrostatic discharge and a method for forming the structure |
US20060071304A1 (en) * | 2004-09-29 | 2006-04-06 | International Business Machines Corporation | Structure and layout of a fet prime cell |
US7250668B2 (en) * | 2005-01-20 | 2007-07-31 | Diodes, Inc. | Integrated circuit including power diode |
US7569874B2 (en) * | 2006-09-13 | 2009-08-04 | Intel Corporation | Device and method of manufacture for a low noise junction field effect transistor |
US8035159B2 (en) * | 2007-04-30 | 2011-10-11 | Alpha & Omega Semiconductor, Ltd. | Device structure and manufacturing method using HDP deposited source-body implant block |
EP3447803A3 (en) | 2007-09-26 | 2019-06-19 | STMicroelectronics N.V. | Adjustable field effect rectifier |
US8148748B2 (en) | 2007-09-26 | 2012-04-03 | Stmicroelectronics N.V. | Adjustable field effect rectifier |
TWI376752B (en) * | 2008-04-22 | 2012-11-11 | Pfc Device Co | Mos pn junction schottky diode and method for manufacturing the same |
TWI381455B (zh) * | 2008-04-22 | 2013-01-01 | Pfc Device Co | 金氧半p-n接面二極體結構及其製作方法 |
CN101752208B (zh) * | 2008-12-03 | 2013-06-19 | 商海涵 | 半导体高压终端结构及其制造方法 |
WO2010080855A2 (en) | 2009-01-06 | 2010-07-15 | Lakota Technologies Inc. | Self-bootstrapping field effect diode structures and methods |
DE102009006885B4 (de) * | 2009-01-30 | 2011-09-22 | Advanced Micro Devices, Inc. | Verfahren zum Erzeugen einer abgestuften Wannenimplantation für asymmetrische Transistoren mit kleinen Gateelektrodenabständen und Halbleiterbauelemente |
WO2010127370A2 (en) | 2009-05-01 | 2010-11-04 | Lakota Technologies, Inc. | Series current limiting device |
TWI425575B (zh) * | 2010-07-09 | 2014-02-01 | Tzu Hsiung Chen | 低閘容金氧半p-n接面二極體結構及其製作方法 |
TWI422041B (zh) | 2010-09-01 | 2014-01-01 | Pfc Device Corp | 溝渠隔絕式金氧半p-n接面二極體結構及其製作方法 |
CN102254819B (zh) * | 2011-02-25 | 2014-07-09 | 陈自雄 | 低栅容金属氧化物半导体p-n 结二极管结构及其制作方法 |
TWI451498B (zh) | 2011-12-28 | 2014-09-01 | Pfc Device Corp | 具快速反應速度的金氧半p-n接面二極體及其製作方法 |
CN103208422B (zh) * | 2012-01-11 | 2015-11-18 | 节能元件控股有限公司 | 金属氧化半导体p-n接面二极管及其制作方法 |
TWI480951B (zh) | 2012-03-21 | 2015-04-11 | Pfc Device Corp | 用於半導體元件之寬溝渠終端結構 |
US9018048B2 (en) | 2012-09-27 | 2015-04-28 | Stmicroelectronics S.R.L. | Process for manufactuirng super-barrier rectifiers |
TWI466302B (zh) * | 2012-11-21 | 2014-12-21 | Pfc Device Corp | 具有終端結構之金氧半二極體元件及其製法 |
KR101457855B1 (ko) * | 2013-01-21 | 2014-11-06 | 주식회사 실리콘웍스 | 모스 제어 정류 회로의 제조 방법 |
CN103325839A (zh) * | 2013-06-26 | 2013-09-25 | 张家港凯思半导体有限公司 | 一种mos超势垒整流器件及其制造方法 |
KR20150026531A (ko) | 2013-09-03 | 2015-03-11 | 삼성전자주식회사 | 반도체 장치 그 제조 방법 |
CN104576359B (zh) * | 2013-10-23 | 2017-10-27 | 无锡华润上华科技有限公司 | 功率二极管的制备方法 |
CN107346735A (zh) * | 2016-05-05 | 2017-11-14 | 北大方正集团有限公司 | 二极管的制备方法和二极管 |
CN107579120B (zh) * | 2016-07-05 | 2020-10-16 | 北大方正集团有限公司 | 功率二极管的制备方法和功率二极管 |
CN112086360B (zh) * | 2020-09-27 | 2022-04-05 | 江苏东海半导体股份有限公司 | 一种SiC平面MOSFET及其自对准工艺 |
CN113410311A (zh) * | 2021-08-23 | 2021-09-17 | 江苏应能微电子有限公司 | 降低正向导通电压和导通电阻的转向二极管结构和制造方法 |
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JPH0691263B2 (ja) * | 1988-10-19 | 1994-11-14 | 株式会社東芝 | 半導体装置の製造方法 |
JPH0783122B2 (ja) * | 1988-12-01 | 1995-09-06 | 富士電機株式会社 | 半導体装置の製造方法 |
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JPH06291181A (ja) * | 1993-03-30 | 1994-10-18 | Nippon Steel Corp | 半導体装置の製造方法 |
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DE69434937D1 (de) * | 1994-06-23 | 2007-04-19 | St Microelectronics Srl | Verfahren zur Herstellung von Leistungsbauteilen in MOS-Technologie |
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JP3216804B2 (ja) * | 1998-01-06 | 2001-10-09 | 富士電機株式会社 | 炭化けい素縦形fetの製造方法および炭化けい素縦形fet |
US6274443B1 (en) * | 1998-09-28 | 2001-08-14 | Advanced Micro Devices, Inc. | Simplified graded LDD transistor using controlled polysilicon gate profile |
US6180464B1 (en) * | 1998-11-24 | 2001-01-30 | Advanced Micro Devices, Inc. | Metal oxide semiconductor device with localized laterally doped channel |
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-
2000
- 2000-12-19 US US09/742,262 patent/US6624030B2/en not_active Expired - Lifetime
-
2001
- 2001-12-19 CN CNB01143693XA patent/CN1248298C/zh not_active Expired - Fee Related
-
2003
- 2003-05-27 US US10/446,246 patent/US6765264B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CN1367528A (zh) | 2002-09-04 |
US20020074595A1 (en) | 2002-06-20 |
US6624030B2 (en) | 2003-09-23 |
US6765264B1 (en) | 2004-07-20 |
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