JP2018517283A5 - - Google Patents

Download PDF

Info

Publication number
JP2018517283A5
JP2018517283A5 JP2017553059A JP2017553059A JP2018517283A5 JP 2018517283 A5 JP2018517283 A5 JP 2018517283A5 JP 2017553059 A JP2017553059 A JP 2017553059A JP 2017553059 A JP2017553059 A JP 2017553059A JP 2018517283 A5 JP2018517283 A5 JP 2018517283A5
Authority
JP
Japan
Prior art keywords
region
substrate
conductivity type
buried
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2017553059A
Other languages
English (en)
Japanese (ja)
Other versions
JP6940913B2 (ja
JP2018517283A (ja
Filing date
Publication date
Priority claimed from US14/680,211 external-priority patent/US9806148B2/en
Application filed filed Critical
Publication of JP2018517283A publication Critical patent/JP2018517283A/ja
Publication of JP2018517283A5 publication Critical patent/JP2018517283A5/ja
Priority to JP2021141564A priority Critical patent/JP7311941B2/ja
Application granted granted Critical
Publication of JP6940913B2 publication Critical patent/JP6940913B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2017553059A 2015-04-07 2016-04-07 寄生容量が低減されたデバイスアイソレーター Active JP6940913B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2021141564A JP7311941B2 (ja) 2015-04-07 2021-08-31 寄生容量が低減されたデバイスアイソレーター

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/680,211 US9806148B2 (en) 2015-04-07 2015-04-07 Device isolator with reduced parasitic capacitance
US14/680,211 2015-04-07
PCT/US2016/026447 WO2016164587A1 (en) 2015-04-07 2016-04-07 Device isolator with reduced parasitic capacitance

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2021141564A Division JP7311941B2 (ja) 2015-04-07 2021-08-31 寄生容量が低減されたデバイスアイソレーター

Publications (3)

Publication Number Publication Date
JP2018517283A JP2018517283A (ja) 2018-06-28
JP2018517283A5 true JP2018517283A5 (enExample) 2019-05-16
JP6940913B2 JP6940913B2 (ja) 2021-09-29

Family

ID=57072725

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2017553059A Active JP6940913B2 (ja) 2015-04-07 2016-04-07 寄生容量が低減されたデバイスアイソレーター
JP2021141564A Active JP7311941B2 (ja) 2015-04-07 2021-08-31 寄生容量が低減されたデバイスアイソレーター

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2021141564A Active JP7311941B2 (ja) 2015-04-07 2021-08-31 寄生容量が低減されたデバイスアイソレーター

Country Status (4)

Country Link
US (4) US9806148B2 (enExample)
JP (2) JP6940913B2 (enExample)
CN (1) CN107615493B (enExample)
WO (1) WO2016164587A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105514091B (zh) * 2014-09-22 2018-12-21 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法和电子装置
US10447202B2 (en) 2017-02-08 2019-10-15 Texas Instruments Incorporated Apparatus for communication across a capacitively coupled channel
CN108281365A (zh) * 2018-01-24 2018-07-13 德淮半导体有限公司 用于晶圆可接受性测试的焊盘及其制造方法
US20190279945A1 (en) * 2018-03-06 2019-09-12 Texas Instruments Incorporated Electronic circuit with guard features for reliability in humid environments
US11049820B2 (en) * 2018-07-30 2021-06-29 Texas Instruments Incorporated Crack suppression structure for HV isolation component
DE112019002216T5 (de) 2019-03-08 2021-02-18 Rohm Co., Ltd. Elektronikkomponente
US11342288B2 (en) 2019-06-04 2022-05-24 Allegro Microsystems, Llc Signal isolator having at least one isolation island
US11881449B2 (en) * 2019-07-19 2024-01-23 Texas Instruments Incorporated High performance high voltage isolators
KR102331471B1 (ko) * 2019-08-23 2021-11-26 (주)아트로닉스 고전력 반도체 소자 및 그의 제조 방법
US11515246B2 (en) * 2020-10-09 2022-11-29 Allegro Microsystems, Llc Dual circuit digital isolator
US11476189B2 (en) 2020-12-12 2022-10-18 Texas Instruments Incorporated Resonant inductive-capacitive isolated data channel
CN117063284A (zh) * 2021-03-29 2023-11-14 罗姆股份有限公司 隔离器、绝缘模块以及栅极驱动器
US20230047044A1 (en) * 2021-08-16 2023-02-16 Texas Instruments Incorporated Galvanic high voltage isolation capability enhancement on reinforced isolation technologies
KR102629767B1 (ko) 2021-09-08 2024-01-29 에스케이키파운드리 주식회사 디지털 아이솔레이터용 커패시터 구조를 포함하는 반도체 소자 및 그 제조 방법
CN115206764B (zh) * 2022-07-21 2025-09-16 北京北方华创微电子装备有限公司 线圈装置及半导体工艺腔室
CN116259613A (zh) * 2022-12-27 2023-06-13 荣湃半导体（上海）有限公司 一种电容隔离器、半导体器件

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05206387A (ja) * 1992-01-23 1993-08-13 Mitsubishi Electric Corp 半導体集積回路
JP2001217394A (ja) * 1999-12-22 2001-08-10 Texas Instr Inc <Ti> 受動形デバイスの製法
US6399990B1 (en) 2000-03-21 2002-06-04 International Business Machines Corporation Isolated well ESD device
US6441436B1 (en) * 2000-11-29 2002-08-27 United Microelectronics Corp. SOI device and method of fabrication
KR100535062B1 (ko) * 2001-06-04 2005-12-07 마츠시타 덴끼 산교 가부시키가이샤 고내압 반도체장치
JP4267231B2 (ja) * 2001-12-27 2009-05-27 株式会社ルネサステクノロジ 半導体装置及びその製造方法
JP2003332447A (ja) * 2002-05-13 2003-11-21 Mitsubishi Electric Corp 容量素子
JP3967199B2 (ja) * 2002-06-04 2007-08-29 シャープ株式会社 半導体装置及びその製造方法
JP2004022737A (ja) 2002-06-14 2004-01-22 Matsushita Electric Ind Co Ltd 半導体キャパシタ、およびそれを用いた高周波増幅装置
US7825488B2 (en) 2006-05-31 2010-11-02 Advanced Analogic Technologies, Inc. Isolation structures for integrated circuits and modular methods of forming the same
US7667268B2 (en) * 2002-08-14 2010-02-23 Advanced Analogic Technologies, Inc. Isolated transistor
JP2004158669A (ja) 2002-11-07 2004-06-03 Konica Minolta Holdings Inc 半導体性組成物及びそれを用いる電界効果トランジスタ
JP2004158699A (ja) * 2002-11-07 2004-06-03 Seiko Epson Corp 半導体集積回路
JP4775682B2 (ja) * 2003-09-29 2011-09-21 オンセミコンダクター・トレーディング・リミテッド 半導体集積回路装置
US6903918B1 (en) 2004-04-20 2005-06-07 Texas Instruments Incorporated Shielded planar capacitor
US7193262B2 (en) 2004-12-15 2007-03-20 International Business Machines Corporation Low-cost deep trench decoupling capacitor device and process of manufacture
US7413947B2 (en) * 2005-02-24 2008-08-19 Texas Instruments Incorporated Integrated high voltage capacitor having a top-level dielectric layer and a method of manufacture therefor
US7619298B1 (en) * 2005-03-31 2009-11-17 Xilinx, Inc. Method and apparatus for reducing parasitic capacitance
JP2008108799A (ja) * 2006-10-24 2008-05-08 Sony Corp 半導体装置
JP2008117996A (ja) * 2006-11-07 2008-05-22 Matsushita Electric Ind Co Ltd 半導体装置
US20080277761A1 (en) 2007-05-08 2008-11-13 Texas Instruments, Inc. On-chip isolation capacitors, circuits therefrom, and methods for forming the same
JP2009065031A (ja) * 2007-09-07 2009-03-26 Sanyo Electric Co Ltd 半導体装置
JP2009281773A (ja) * 2008-05-20 2009-12-03 Honda Motor Co Ltd 電流センサ
US8134212B2 (en) 2008-08-08 2012-03-13 Texas Instruments Incorporated Implanted well breakdown in high voltage devices
JP5375952B2 (ja) 2009-03-31 2013-12-25 日本電気株式会社 半導体装置
JP2012064260A (ja) 2010-09-14 2012-03-29 Sanyo Electric Co Ltd 光ピックアップ装置
AU2011331918B2 (en) 2010-11-18 2013-12-19 The Silanna Group Pty Ltd Single-chip integrated circuit with capacitive isolation
US8299533B2 (en) * 2010-11-24 2012-10-30 International Business Machines Corporation Vertical NPNP structure in a triple well CMOS process
US8753952B2 (en) 2011-09-08 2014-06-17 Texas Instruments Incorporated Integrated circuit with integrated decoupling capacitors
JP5885586B2 (ja) 2012-05-22 2016-03-15 ルネサスエレクトロニクス株式会社 半導体装置
US8957500B2 (en) 2012-10-10 2015-02-17 Nxp B.V. High-voltage integrated metal capacitor and fabrication method
US8890223B1 (en) 2013-08-06 2014-11-18 Texas Instruments Incorporated High voltage hybrid polymeric-ceramic dielectric capacitor

Similar Documents

Publication Publication Date Title
JP2018517283A5 (enExample)
US11869933B2 (en) Device isolator with reduced parasitic capacitance
US10505035B2 (en) Methods of reducing the electrical and thermal resistance of SiC substrates and devices made thereby
CN105280631B (zh) 瞬时电压抑制元件及其制造方法
US9368621B1 (en) Power semiconductor device having low on-state resistance
JP2007535812A5 (enExample)
US8368167B1 (en) Schottky diode with extended forward current capability
CN106449633B (zh) 瞬态电压抑制器及其制造方法
CN102915997A (zh) 具有高电压结终端的高电压电阻器
TW201405822A (zh) 半導體元件與高電壓半導體元件的形成方法
US8847312B2 (en) LDMOS device and method for improved SOA
US7405128B1 (en) Dotted channel MOSFET and method
US20160104781A1 (en) Integrated floating diode structure and method therefor
JP6334655B2 (ja) パワー半導体デバイス
TWI705500B (zh) 具有接觸深井區域之電晶體
CN109148442B (zh) 一种电压抑制器及其制备方法
CN109638010B (zh) 射频切换装置以及其制作方法
US10121846B1 (en) Resistor structure with high resistance based on very thin semiconductor layer
CN105448973A (zh) 阱电阻结构及其制造方法及绝缘体上硅器件
US20250338518A1 (en) Patterned deep trench isolation for passive devices
CN106206565B (zh) 二极管与二极管串电路
CN117594444A (zh) 集成功率器件及其制备方法
CN120957455A (zh) 一种半导体结构及集成电路
CN104241243A (zh) 半导体器件结构及其制作方法
US20160163659A1 (en) Radio frequency device protected against overvoltages