|
US7497959B2
(en)
|
2004-05-11 |
2009-03-03 |
International Business Machines Corporation |
Methods and structures for protecting one area while processing another area on a chip
|
|
US7879409B2
(en)
*
|
2004-07-23 |
2011-02-01 |
Applied Materials, Inc. |
Repeatability of CVD film deposition during sequential processing of substrates in a deposition chamber
|
|
US20060093756A1
(en)
*
|
2004-11-03 |
2006-05-04 |
Nagarajan Rajagopalan |
High-power dielectric seasoning for stable wafer-to-wafer thickness uniformity of dielectric CVD films
|
|
US8193096B2
(en)
|
2004-12-13 |
2012-06-05 |
Novellus Systems, Inc. |
High dose implantation strip (HDIS) in H2 base chemistry
|
|
JP4357434B2
(ja)
*
|
2005-02-25 |
2009-11-04 |
株式会社東芝 |
半導体装置の製造方法
|
|
US8486845B2
(en)
*
|
2005-03-21 |
2013-07-16 |
Tokyo Electron Limited |
Plasma enhanced atomic layer deposition system and method
|
|
WO2007000469A1
(en)
*
|
2005-06-29 |
2007-01-04 |
Oc Oerlikon Balzers Ag |
Method for manufacturing flat substrates
|
|
US8057603B2
(en)
*
|
2006-02-13 |
2011-11-15 |
Tokyo Electron Limited |
Method of cleaning substrate processing chamber, storage medium, and substrate processing chamber
|
|
JP2007294905A
(ja)
*
|
2006-03-30 |
2007-11-08 |
Hitachi High-Technologies Corp |
半導体製造方法およびエッチングシステム
|
|
US7906032B2
(en)
*
|
2006-03-31 |
2011-03-15 |
Tokyo Electron Limited |
Method for conditioning a process chamber
|
|
US20070248767A1
(en)
*
|
2006-04-19 |
2007-10-25 |
Asm Japan K.K. |
Method of self-cleaning of carbon-based film
|
|
US9157151B2
(en)
*
|
2006-06-05 |
2015-10-13 |
Applied Materials, Inc. |
Elimination of first wafer effect for PECVD films
|
|
US8232176B2
(en)
*
|
2006-06-22 |
2012-07-31 |
Applied Materials, Inc. |
Dielectric deposition and etch back processes for bottom up gapfill
|
|
US20100178017A1
(en)
*
|
2006-10-06 |
2010-07-15 |
Boris Kharas |
Method for Improving Refractive Index Control in PECVD Deposited a-SiNy Films
|
|
US20080118663A1
(en)
*
|
2006-10-12 |
2008-05-22 |
Applied Materials, Inc. |
Contamination reducing liner for inductively coupled chamber
|
|
JPWO2008050596A1
(ja)
*
|
2006-10-25 |
2010-02-25 |
パナソニック株式会社 |
プラズマドーピング方法及びプラズマドーピング装置
|
|
EP2088123A1
(en)
*
|
2006-11-10 |
2009-08-12 |
Sumitomo Electric Industries, Ltd. |
Si-O CONTAINING HYDROGENATED CARBON FILM, OPTICAL DEVICE INCLUDING THE SAME, AND METHOD FOR MANUFACTURING THE Si-O CONTAINING HYDROGENATED FILM AND THE OPTICAL DEVICE
|
|
KR101101785B1
(ko)
*
|
2007-06-08 |
2012-01-05 |
도쿄엘렉트론가부시키가이샤 |
패터닝 방법
|
|
US20090090382A1
(en)
*
|
2007-10-05 |
2009-04-09 |
Asm Japan K.K. |
Method of self-cleaning of carbon-based film
|
|
US7867923B2
(en)
*
|
2007-10-22 |
2011-01-11 |
Applied Materials, Inc. |
High quality silicon oxide films by remote plasma CVD from disilane precursors
|
|
US8357435B2
(en)
*
|
2008-05-09 |
2013-01-22 |
Applied Materials, Inc. |
Flowable dielectric equipment and processes
|
|
JP5384852B2
(ja)
*
|
2008-05-09 |
2014-01-08 |
株式会社日立国際電気 |
半導体装置の製造方法及び半導体製造装置
|
|
US8105648B2
(en)
*
|
2008-05-13 |
2012-01-31 |
United Microelectronics Corp. |
Method for operating a chemical deposition chamber
|
|
US20100089978A1
(en)
*
|
2008-06-11 |
2010-04-15 |
Suss Microtec Inc |
Method and apparatus for wafer bonding
|
|
US20100081293A1
(en)
*
|
2008-10-01 |
2010-04-01 |
Applied Materials, Inc. |
Methods for forming silicon nitride based film or silicon carbon based film
|
|
KR101736508B1
(ko)
*
|
2008-11-20 |
2017-05-16 |
오를리콘 서피스 솔루션스 아크티엔게젤샤프트, 페피콘 |
코팅 시스템용 세정 방법
|
|
CN101752457B
(zh)
*
|
2008-12-18 |
2011-11-02 |
北京北方微电子基地设备工艺研究中心有限责任公司 |
一种太阳能电池制造方法及设备
|
|
US8642128B2
(en)
*
|
2009-04-20 |
2014-02-04 |
Applied Materials, Inc. |
Enhanced scavenging of residual fluorine radicals using silicon coating on process chamber walls
|
|
US8980382B2
(en)
*
|
2009-12-02 |
2015-03-17 |
Applied Materials, Inc. |
Oxygen-doping for non-carbon radical-component CVD films
|
|
US8741788B2
(en)
*
|
2009-08-06 |
2014-06-03 |
Applied Materials, Inc. |
Formation of silicon oxide using non-carbon flowable CVD processes
|
|
US7989365B2
(en)
*
|
2009-08-18 |
2011-08-02 |
Applied Materials, Inc. |
Remote plasma source seasoning
|
|
US20110136347A1
(en)
*
|
2009-10-21 |
2011-06-09 |
Applied Materials, Inc. |
Point-of-use silylamine generation
|
|
JP2013509700A
(ja)
*
|
2009-10-30 |
2013-03-14 |
ソルヴェイ(ソシエテ アノニム) |
F2およびcof2を使用するプラズマエッチングおよびチャンバのプラズマ洗浄の方法
|
|
US8449942B2
(en)
*
|
2009-11-12 |
2013-05-28 |
Applied Materials, Inc. |
Methods of curing non-carbon flowable CVD films
|
|
US20110143548A1
(en)
|
2009-12-11 |
2011-06-16 |
David Cheung |
Ultra low silicon loss high dose implant strip
|
|
WO2011090626A2
(en)
*
|
2009-12-30 |
2011-07-28 |
Applied Materials, Inc. |
Dielectric film growth with radicals produced using flexible nitrogen/hydrogen ratio
|
|
US8329262B2
(en)
*
|
2010-01-05 |
2012-12-11 |
Applied Materials, Inc. |
Dielectric film formation using inert gas excitation
|
|
CN102754193A
(zh)
*
|
2010-01-06 |
2012-10-24 |
应用材料公司 |
使用氧化物衬垫的可流动电介质
|
|
KR101837648B1
(ko)
|
2010-01-07 |
2018-04-19 |
어플라이드 머티어리얼스, 인코포레이티드 |
라디칼-컴포넌트 cvd를 위한 인시츄 오존 경화
|
|
JP2013521650A
(ja)
*
|
2010-03-05 |
2013-06-10 |
アプライド マテリアルズ インコーポレイテッド |
ラジカル成分cvdによる共形層
|
|
US8236708B2
(en)
*
|
2010-03-09 |
2012-08-07 |
Applied Materials, Inc. |
Reduced pattern loading using bis(diethylamino)silane (C8H22N2Si) as silicon precursor
|
|
US7994019B1
(en)
|
2010-04-01 |
2011-08-09 |
Applied Materials, Inc. |
Silicon-ozone CVD with reduced pattern loading using incubation period deposition
|
|
US8476142B2
(en)
|
2010-04-12 |
2013-07-02 |
Applied Materials, Inc. |
Preferential dielectric gapfill
|
|
US8524004B2
(en)
|
2010-06-16 |
2013-09-03 |
Applied Materials, Inc. |
Loadlock batch ozone cure
|
|
US8318584B2
(en)
|
2010-07-30 |
2012-11-27 |
Applied Materials, Inc. |
Oxide-rich liner layer for flowable CVD gapfill
|
|
US9285168B2
(en)
|
2010-10-05 |
2016-03-15 |
Applied Materials, Inc. |
Module for ozone cure and post-cure moisture treatment
|
|
US8664127B2
(en)
|
2010-10-15 |
2014-03-04 |
Applied Materials, Inc. |
Two silicon-containing precursors for gapfill enhancing dielectric liner
|
|
US10283321B2
(en)
|
2011-01-18 |
2019-05-07 |
Applied Materials, Inc. |
Semiconductor processing system and methods using capacitively coupled plasma
|
|
US8450191B2
(en)
|
2011-01-24 |
2013-05-28 |
Applied Materials, Inc. |
Polysilicon films by HDP-CVD
|
|
US8716154B2
(en)
|
2011-03-04 |
2014-05-06 |
Applied Materials, Inc. |
Reduced pattern loading using silicon oxide multi-layers
|
|
EP2689048B1
(en)
*
|
2011-03-25 |
2017-05-03 |
LG Electronics Inc. |
Plasma enhanced chemical vapor deposition apparatus
|
|
US8445078B2
(en)
|
2011-04-20 |
2013-05-21 |
Applied Materials, Inc. |
Low temperature silicon oxide conversion
|
|
US8466073B2
(en)
|
2011-06-03 |
2013-06-18 |
Applied Materials, Inc. |
Capping layer for reduced outgassing
|
|
CN102877041B
(zh)
*
|
2011-07-14 |
2014-11-19 |
中国科学院微电子研究所 |
薄膜沉积方法以及半导体器件制造方法
|
|
US9404178B2
(en)
|
2011-07-15 |
2016-08-02 |
Applied Materials, Inc. |
Surface treatment and deposition for reduced outgassing
|
|
US9613825B2
(en)
|
2011-08-26 |
2017-04-04 |
Novellus Systems, Inc. |
Photoresist strip processes for improved device integrity
|
|
US8617989B2
(en)
|
2011-09-26 |
2013-12-31 |
Applied Materials, Inc. |
Liner property improvement
|
|
US8551891B2
(en)
|
2011-10-04 |
2013-10-08 |
Applied Materials, Inc. |
Remote plasma burn-in
|
|
WO2013106171A1
(en)
*
|
2012-01-09 |
2013-07-18 |
Applied Materials, Inc. |
Method for seasoning uv chamber optical components to avoid degradation
|
|
US8889566B2
(en)
|
2012-09-11 |
2014-11-18 |
Applied Materials, Inc. |
Low cost flowable dielectric films
|
|
US9018108B2
(en)
|
2013-01-25 |
2015-04-28 |
Applied Materials, Inc. |
Low shrinkage dielectric films
|
|
US9165771B2
(en)
|
2013-04-04 |
2015-10-20 |
Tokyo Electron Limited |
Pulsed gas plasma doping method and apparatus
|
|
CN103219227A
(zh)
*
|
2013-04-09 |
2013-07-24 |
上海华力微电子有限公司 |
等离子体清洗方法
|
|
US8765546B1
(en)
|
2013-06-24 |
2014-07-01 |
United Microelectronics Corp. |
Method for fabricating fin-shaped field-effect transistor
|
|
JP6422262B2
(ja)
*
|
2013-10-24 |
2018-11-14 |
東京エレクトロン株式会社 |
プラズマ処理方法及びプラズマ処理装置
|
|
US9745658B2
(en)
|
2013-11-25 |
2017-08-29 |
Lam Research Corporation |
Chamber undercoat preparation method for low temperature ALD films
|
|
CN104752142B
(zh)
*
|
2013-12-31 |
2018-03-06 |
北京北方华创微电子装备有限公司 |
调控等离子体反应腔室环境的方法
|
|
US9328416B2
(en)
*
|
2014-01-17 |
2016-05-03 |
Lam Research Corporation |
Method for the reduction of defectivity in vapor deposited films
|
|
WO2015122981A1
(en)
*
|
2014-02-11 |
2015-08-20 |
Applied Materials, Inc. |
Cleaning process for cleaning amorphous carbon deposition residuals using low rf bias frequency applications
|
|
CN105097485B
(zh)
*
|
2014-05-05 |
2017-09-01 |
北京北方微电子基地设备工艺研究中心有限责任公司 |
腔室环境调控方法
|
|
JP6360770B2
(ja)
*
|
2014-06-02 |
2018-07-18 |
東京エレクトロン株式会社 |
プラズマ処理方法及びプラズマ処理装置
|
|
US9613819B2
(en)
*
|
2014-06-06 |
2017-04-04 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Process chamber, method of preparing a process chamber, and method of operating a process chamber
|
|
US9514954B2
(en)
|
2014-06-10 |
2016-12-06 |
Lam Research Corporation |
Peroxide-vapor treatment for enhancing photoresist-strip performance and modifying organic films
|
|
US9412581B2
(en)
|
2014-07-16 |
2016-08-09 |
Applied Materials, Inc. |
Low-K dielectric gapfill by flowable deposition
|
|
US10192717B2
(en)
*
|
2014-07-21 |
2019-01-29 |
Applied Materials, Inc. |
Conditioning remote plasma source for enhanced performance having repeatable etch and deposition rates
|
|
US9548188B2
(en)
|
2014-07-30 |
2017-01-17 |
Lam Research Corporation |
Method of conditioning vacuum chamber of semiconductor substrate processing apparatus
|
|
CN105448634B
(zh)
*
|
2014-08-28 |
2017-10-24 |
北京北方华创微电子装备有限公司 |
一种腔室环境的控制方法
|
|
JP6298391B2
(ja)
|
2014-10-07 |
2018-03-20 |
東京エレクトロン株式会社 |
プラズマ処理方法及びプラズマ処理装置
|
|
US10316408B2
(en)
*
|
2014-12-12 |
2019-06-11 |
Silcotek Corp. |
Delivery device, manufacturing system and process of manufacturing
|
|
US20160225652A1
(en)
|
2015-02-03 |
2016-08-04 |
Applied Materials, Inc. |
Low temperature chuck for plasma processing systems
|
|
US9828672B2
(en)
|
2015-03-26 |
2017-11-28 |
Lam Research Corporation |
Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma
|
|
CN104867804B
(zh)
*
|
2015-03-30 |
2017-02-01 |
上海华力微电子有限公司 |
晶片刻蚀腔室的清洗方法
|
|
US10023956B2
(en)
|
2015-04-09 |
2018-07-17 |
Lam Research Corporation |
Eliminating first wafer metal contamination effect in high density plasma chemical vapor deposition systems
|
|
US10026638B2
(en)
*
|
2016-12-15 |
2018-07-17 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Plasma distribution control
|
|
US10211099B2
(en)
|
2016-12-19 |
2019-02-19 |
Lam Research Corporation |
Chamber conditioning for remote plasma process
|
|
JP6779165B2
(ja)
|
2017-03-29 |
2020-11-04 |
東京エレクトロン株式会社 |
金属汚染防止方法及び成膜装置
|
|
US20180294197A1
(en)
*
|
2017-04-06 |
2018-10-11 |
Lam Research Corporation |
System design for in-line particle and contamination metrology for showerhead and electrode parts
|
|
US11761079B2
(en)
|
2017-12-07 |
2023-09-19 |
Lam Research Corporation |
Oxidation resistant protective layer in chamber conditioning
|
|
US10760158B2
(en)
|
2017-12-15 |
2020-09-01 |
Lam Research Corporation |
Ex situ coating of chamber components for semiconductor processing
|
|
JP7094131B2
(ja)
*
|
2018-04-03 |
2022-07-01 |
東京エレクトロン株式会社 |
クリーニング方法
|
|
KR20250110938A
(ko)
|
2018-10-19 |
2025-07-21 |
램 리써치 코포레이션 |
반도체 프로세싱을 위한 챔버 컴포넌트들의 인 시츄 (in situ) 보호 코팅
|
|
CN111235553B
(zh)
*
|
2018-11-29 |
2021-04-20 |
中国科学院大连化学物理研究所 |
一种一体化电极及在等离子体增强化学气相沉积设备中的应用
|
|
CN113924387A
(zh)
*
|
2019-05-22 |
2022-01-11 |
应用材料公司 |
用于高温腐蚀环境的基板支承件盖
|
|
TW202536930A
(zh)
*
|
2019-06-28 |
2025-09-16 |
美商蘭姆研究公司 |
光阻膜的乾式腔室清潔
|
|
JP7355615B2
(ja)
*
|
2019-11-25 |
2023-10-03 |
東京エレクトロン株式会社 |
基板洗浄装置及び基板洗浄方法
|
|
WO2021158451A1
(en)
*
|
2020-02-04 |
2021-08-12 |
Lam Research Corporation |
Radiofrequency signal filter arrangement for plasma processing system
|
|
JP7394668B2
(ja)
*
|
2020-03-13 |
2023-12-08 |
東京エレクトロン株式会社 |
温度制御方法およびプラズマ処理装置
|
|
US11721545B2
(en)
|
2020-09-28 |
2023-08-08 |
Applied Materials, Inc. |
Method of using dual frequency RF power in a process chamber
|
|
US11670492B2
(en)
|
2020-10-15 |
2023-06-06 |
Applied Materials, Inc. |
Chamber configurations and processes for particle control
|
|
US11996273B2
(en)
*
|
2020-10-21 |
2024-05-28 |
Applied Materials, Inc. |
Methods of seasoning process chambers
|
|
US20230081862A1
(en)
*
|
2021-09-10 |
2023-03-16 |
Tokyo Electron Limited |
Focus Ring Regeneration
|