JP7094131B2 - クリーニング方法 - Google Patents
クリーニング方法 Download PDFInfo
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- JP7094131B2 JP7094131B2 JP2018071852A JP2018071852A JP7094131B2 JP 7094131 B2 JP7094131 B2 JP 7094131B2 JP 2018071852 A JP2018071852 A JP 2018071852A JP 2018071852 A JP2018071852 A JP 2018071852A JP 7094131 B2 JP7094131 B2 JP 7094131B2
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- 238000000034 method Methods 0.000 title claims description 56
- 238000004140 cleaning Methods 0.000 title claims description 22
- 239000003507 refrigerant Substances 0.000 claims description 112
- 239000007789 gas Substances 0.000 claims description 78
- 239000007795 chemical reaction product Substances 0.000 claims description 30
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 229910052731 fluorine Inorganic materials 0.000 claims description 9
- 239000011737 fluorine Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 description 49
- 230000008020 evaporation Effects 0.000 description 48
- 238000010586 diagram Methods 0.000 description 39
- 238000003860 storage Methods 0.000 description 29
- 230000001105 regulatory effect Effects 0.000 description 27
- 238000002347 injection Methods 0.000 description 21
- 239000007924 injection Substances 0.000 description 21
- 101150098958 CMD1 gene Proteins 0.000 description 10
- 101100382321 Caenorhabditis elegans cal-1 gene Proteins 0.000 description 10
- 239000007788 liquid Substances 0.000 description 10
- 238000005057 refrigeration Methods 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- 229920006395 saturated elastomer Polymers 0.000 description 7
- 239000011555 saturated liquid Substances 0.000 description 6
- 238000004590 computer program Methods 0.000 description 5
- 238000001514 detection method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000009834 vaporization Methods 0.000 description 5
- 230000008016 vaporization Effects 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 238000005411 Van der Waals force Methods 0.000 description 3
- 238000009833 condensation Methods 0.000 description 3
- 230000005494 condensation Effects 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000003672 processing method Methods 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- VRAIHTAYLFXSJJ-UHFFFAOYSA-N alumane Chemical compound [AlH3].[AlH3] VRAIHTAYLFXSJJ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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Description
最初に本開示の実施態様を列記して説明する。本開示の一態様によるクリーニング方法は、プラズマ処理装置の部品のクリーニング方法である。このクリーニング方法は、プラズマ処理装置に設けられ被処理体が載置される載置台に形成された反応生成物を除去する工程を備える。載置台は、プラズマ処理装置に設けられ、冷媒による熱交換を行う熱交換部を備える。反応生成物を除去する工程は、ダミーウエハを載置台に載置する工程と、載置台の温度を昇温する工程と、載置台の温度を昇温した後に反応生成物の除去を行う工程と、を備える。載置台の温度を昇温する工程は、熱交換部から排出され圧縮された後の冷媒を凝縮して熱交換部に供給する凝縮器の出力端と熱交換部の入力端との間の膨張弁を開としつつ載置台に入熱すると共に、熱交換部から排出された冷媒を圧縮して凝縮器に供給する圧縮器の出力端と熱交換部の入力端との間の分流弁とを開としつつ分流弁の開度を調節することによって、載置台の温度を昇温する。このように、載置台の温度を上昇させて反応生成物を除去することができるので、比較的に高い温度で良好に反応生成物の除去が可能となる。
以下、図面を参照して種々の実施形態について詳細に説明する。なお、各図面において同一または相当の部分に対しては同一の符号を附すこととする。
工程K23の実行中は、載置台PDの温度がD[℃]以上に維持される。
図7は、第1実施例に係る温調システムCSの構成を示す図である。温調システムCSは、チラーユニットCH、供給ラインSL、排出ラインDLd(第1排出ライン)、熱交換部HEを備える。
Φ0=Qmr×Wr=Qmr×(h1-h4)。
ただし、Wr,h1,h4のそれぞれは以下のように定義される。
Wr:冷凍効果[kJ/kg]。
h1:蒸発室VP出口の冷媒(過熱蒸気)の比エンタルピー[kJ/kg]。
h4:蒸発室VP入口の冷媒(湿り蒸気)の比エンタルピー[kJ/kg]。
また、温調システムCSによって被冷却体を冷却できる能力のことを冷凍能力と呼ぶ。したがって、冷凍能力は冷媒の冷凍効果、冷媒の循環量と比例関係にある。また、蒸発室VPが分室VP‐1~分室VP-nに分割される場合にも、冷媒循環量が調整されることによって、分室VP‐1~分室VP-nのそれぞれの冷凍能力が制御され得る。
図11は、一実施形態に係る温調システムCSの他の構成(第2実施例)を示す図である。第2実施例に係る温調システムCSでは、第1実施例の蒸発室VPおよび貯留室RTが変更されている。
図15は、一実施形態に係る温調システムCSの他の構成(第3実施例)を示す図である。第3実施例に係る温調システムCSは、第1実施例に対して排出ラインDLu(第2排出ライン)が加えられた構成を有する。
図16は、一実施形態に係る温調システムCSの他の構成(第4実施例)を示す図である。第4実施例に係る温調システムCSは、第2実施例に対して、排出ラインDLuが加えられた構成を有する。第4実施例に係る排出ラインDLuは、枝ラインDLu‐1~枝ラインDLu‐nを備える。
図18は、一実施形態に係る温調システムCSの他の構成(第5実施例)を示す図である。第5実施例に係る温調システムCSは、複数のチラーユニット(チラーユニットCH‐1~チラーユニットCH‐n)を有する。チラーユニットCH‐1~チラーユニットCH‐nのそれぞれは、第2実施例のチラーユニットCHと同様の機能を有する。特に、チラーユニットCH‐1~チラーユニットCH‐nのそれぞれ(例えばチラーユニットCH‐1)は、互いに連通する一組の第2分室と第1分室とに対して(例えばチラーユニットCH‐1に接続する分室RT‐1と分室VP‐1とに対して)、冷媒の供給および排出を行う。
Claims (7)
- プラズマ処理装置の部品のクリーニング方法であって、
前記プラズマ処理装置に設けられ被処理体が載置される載置台に形成された反応生成物を除去する工程を備え、
前記載置台は、前記プラズマ処理装置に設けられ、冷媒による熱交換を行う熱交換部を備え、
前記反応生成物を除去する前記工程は、
(a)ダミーウエハを前記載置台に載置する工程と、
(b)前記載置台の温度を、
前記熱交換部から排出され圧縮された後の前記冷媒を凝縮して該熱交換部に供給する凝縮器の出力端と該熱交換部の入力端との間に配置された膨張弁を開放し、
前記載置台に入熱し、
前記熱交換部から排出された前記冷媒を圧縮して前記凝縮器に供給する圧縮器の出力端と該熱交換部の入力端との間の分流弁を開き、
前記分流弁の開度を調整する、
ことによって昇温させる工程と、
(c)前記載置台の温度を昇温した後に前記反応生成物の除去を行う工程と、
を備え、
前記(c)が終了すると、前記載置台への入熱を終了すると共に前記分流弁を閉じ、
前記反応生成物を除去する前記工程の全体にわたって、前記膨張弁を一定の開度に維持する、
クリーニング方法。 - 前記反応生成物は、炭素、フッ素およびシリコンを有する、
請求項1に記載のクリーニング方法。 - 前記(c)は、
フッ素を含むガスと酸素を含むガスとの混合ガスを用いて前記反応生成物の除去を行う、
請求項1または2に記載のクリーニング方法。 - フッ素を含む前記ガスは、CF4、NF3、C4F8の少なくとも一を含み、
酸素を含む前記ガスは、O2、O3、CO、CO2、COSの少なくとも一を含む、
請求項3に記載のクリーニング方法。 - 前記(c)の終了に応じて、前記載置台への入熱を終了する工程を更に備える、
請求項1~4の何れか一項に記載のクリーニング方法。 - 前記載置台への入熱は、プラズマによって行われる、
請求項1~5の何れか一項に記載のクリーニング方法。 - 前記載置台は、ヒータを備え、
前記載置台への入熱は、前記ヒータによって行われる、
請求項1~6の何れか一項に記載のクリーニング方法。
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