JP2007531898A - 感光性樹脂除去用シンナー組成物 - Google Patents
感光性樹脂除去用シンナー組成物 Download PDFInfo
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- JP2007531898A JP2007531898A JP2006508529A JP2006508529A JP2007531898A JP 2007531898 A JP2007531898 A JP 2007531898A JP 2006508529 A JP2006508529 A JP 2006508529A JP 2006508529 A JP2006508529 A JP 2006508529A JP 2007531898 A JP2007531898 A JP 2007531898A
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- Japan
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- propylene glycol
- photoresist
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Materials For Photolithography (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
本発明によるフォトレジスト除去用シンナー組成物は、液晶ディスプレイ素子と有機ELディスプレイ素子の製造に使用されるガラス基板、及び半導体製造に使用されるウエハーの周縁と背面に使用されて不必要に付着したフォトレジストを短時間で効率的に除去することができ、界面の段差を減らし、特にフォトレジストに対する界面浸透現象を抑制することができる。したがって、多様な工程に適用することが可能であり、経済的な使用はもちろん、製造工程の簡便化及び生産性を向上させることができる。
Description
下記表1のような組成と含量を有する実施例1乃至5及び比較例1乃至5のシンナー組成物を各々製造した。
1.PGME:プロピレングリコールモノメチルエーテル、
2.PGMEA:プロピレングリコールモノエチルエーテルアセテート、
3.n-PE:酢酸ノルマルプロピル、
4.CXN:シクロヘキサノン、
5.GBL:□-ブチロラクトン、
6.OP-1015:オクチルフェノール1モル当りエチレンオキシド5モルを縮合して調整した縮合物、東南合成株式会社の‘モノポルOP-1015’、
7.R-08:フッ化アクリルコポリマー、大日本インキ化学工業株式会社の‘メガフェースR-08’。
8インチ酸化ケイ素基板にそれぞれのフォトレジストを塗布した後、前記実施例1乃至7及び比較例1乃至5のシンナー組成物を使用して、エッジ部の不必要なフォトレジストを除去する実験(edge bead Removing実験:以下、EBR実験と言う)を行った。EBR実験もまた、基板にフォトレジストを塗布する時に使用した回転塗布器を使用した。
Claims (11)
- a)プロピレングリコールモノアルキルエーテルと;
b)酢酸アルキルと;
c)シクロケトンを含むフォトレジスト除去用シンナー組成物。 - a)プロピレングリコールモノアルキルエーテル10乃至90重量部と;
b)酢酸アルキル10乃至70重量部と;
c)シクロケトン1乃至70重量部を含む、請求項1に記載のシンナー組成物。 - 前記組成物がd)フッ化アクリルコポリマーと;e)ポリエチレンオキシド系縮合物よりなる群から1種以上選択される化合物をさらに含む、請求項1に記載のシンナー組成物。
- a)プロピレングリコールモノアルキルエーテル10乃至90重量部と;
b)酢酸アルキル10乃至70重量部と;
c)シクロケトン1乃至70重量部と;
d)フッ化アクリルコポリマー0.001乃至1重量部を含む、請求項1に記載のシンナー組成物。 - a)プロピレングリコールモノアルキルエーテル10乃至90重量部と;
b)酢酸アルキル10乃至70重量部と;
c)シクロケトン1乃至70重量部と;
e)ポリエチレンオキシド系縮合物0.001乃至1重量部を含む、請求項1に記載のシンナー組成物。 - a)プロピレングリコールモノアルキルエーテル10乃至90重量部と;
b)酢酸アルキル10乃至70重量部と;
c)シクロケトン1乃至70重量部と;
d)フッ化アクリルコポリマー0.001乃至1重量部と;
e)ポリエチレンオキシド系縮合物0.001乃至1重量部を含む、請求項1に記載のシンナー組成物。 - 前記プロピレングリコールモノアルキルエーテルがプロピレングリコールモノメチルエーテル、プロピレングリコールモノエチルエーテル、プロピレングリコールモノプロピルエーテル、及びプロピレングリコールモノブチルエーテルよりなる群から1種以上選択される、請求項1に記載のシンナー組成物。
- 前記酢酸アルキルが酢酸メチル、酢酸エチル、酢酸イソプロピル、酢酸ノルマルプロピル、及び酢酸ブチルよりなる群から1種以上選択される、請求項1に記載のシンナー組成物。
- 前記シクロケトンがシクロペンタノン、シクロヘキサノン、及びシクロヘプタノンよりなる群から1種以上選択される、請求項1に記載のシンナー組成物。
- 前記フッ化アクリルコポリマーは重量平均分子量が3000乃至10000である、請求項3に記載のシンナー組成物。
- 前記ポリエチレンオキシド系縮合物が直鎖または側鎖のC6乃至C12のアルキル基を持っているアルキルフェノール及びこのようなアルキルフェノール1モル当り5乃至25モルのエチレンオキシドの縮合生成物である、請求項3に記載のシンナー組成物。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030035683A KR100951364B1 (ko) | 2003-06-03 | 2003-06-03 | 포토레지스트 제거용 씬너 조성물 |
PCT/KR2004/001168 WO2004107057A1 (en) | 2003-06-03 | 2004-05-17 | Thinner composition for removing photosensitive resin |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007531898A true JP2007531898A (ja) | 2007-11-08 |
JP4512092B2 JP4512092B2 (ja) | 2010-07-28 |
Family
ID=36819234
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006508529A Expired - Fee Related JP4512092B2 (ja) | 2003-06-03 | 2004-05-17 | 感光性樹脂除去用シンナー組成物 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP4512092B2 (ja) |
KR (1) | KR100951364B1 (ja) |
CN (1) | CN100578367C (ja) |
TW (1) | TWI309757B (ja) |
WO (1) | WO2004107057A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014142635A (ja) * | 2012-12-27 | 2014-08-07 | Fujifilm Corp | レジスト除去液およびレジスト剥離方法 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4236198B2 (ja) * | 2004-12-28 | 2009-03-11 | 東京応化工業株式会社 | リソグラフィー用洗浄液及びそれを用いた半導体基材形成方法 |
CN1800988B (zh) * | 2005-01-06 | 2010-04-07 | 新应材股份有限公司 | 光阻清洗剂 |
JP4698515B2 (ja) * | 2005-07-19 | 2011-06-08 | 昭和電工株式会社 | 感光性組成物除去液 |
US20090208887A1 (en) * | 2005-07-19 | 2009-08-20 | Showa Denko K.K. | Removing solution for photosensitive composition |
JP4762867B2 (ja) * | 2005-12-02 | 2011-08-31 | 東京応化工業株式会社 | ホトリソグラフィ用洗浄液およびこれを用いた基板の洗浄方法 |
JP4643467B2 (ja) * | 2006-02-23 | 2011-03-02 | 東京応化工業株式会社 | リソグラフィー用洗浄液、およびこれを用いた基材の洗浄方法、並びに薬液供給装置の洗浄方法 |
US8021490B2 (en) | 2007-01-04 | 2011-09-20 | Eastman Chemical Company | Substrate cleaning processes through the use of solvents and systems |
US20120108067A1 (en) * | 2010-10-29 | 2012-05-03 | Neisser Mark O | Edge Bead Remover For Coatings |
KR101886750B1 (ko) * | 2011-09-22 | 2018-08-13 | 삼성전자 주식회사 | Rrc 공정용 씨너 조성물과 그의 공급 장치 및 ebr 공정용 씨너 조성물 |
KR102492889B1 (ko) * | 2014-12-18 | 2023-01-30 | 주식회사 동진쎄미켐 | 신너 조성물 |
Citations (5)
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KR20020006831A (ko) * | 2000-07-13 | 2002-01-26 | 주식회사 동진쎄미켐 | 박막 트랜지스터 액정표시소자용 포토레지스트를 제거하기위한 씬너 조성물 |
KR20020037665A (ko) * | 2000-11-14 | 2002-05-22 | 주식회사 동진쎄미켐 | 감광성 수지 조성물 제거용 씬너 조성물 |
KR20020089087A (ko) * | 2001-05-23 | 2002-11-29 | 주식회사 동진쎄미켐 | 감광성 수지 조성물 제거용 씬너 조성물 |
KR20030069688A (ko) * | 2002-02-22 | 2003-08-27 | 주식회사 동진쎄미켐 | 감광성 수지 조성물을 제거하기 위한 씬너 조성물 |
KR20030078374A (ko) * | 2002-03-29 | 2003-10-08 | 주식회사 동진쎄미켐 | 감광성 수지 제거용 씬너 조성물 |
Family Cites Families (3)
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DE3246403A1 (de) * | 1982-12-15 | 1984-06-20 | Merck Patent Gmbh, 6100 Darmstadt | Verfahren zur entwicklung von reliefstrukturen auf der basis von strahlungsvernetzten polymervorstufen hochwaermebestaendiger polymere |
JPS6369563A (ja) * | 1986-09-12 | 1988-03-29 | Hitachi Ltd | 塗布方法および装置 |
JP3464299B2 (ja) * | 1994-11-07 | 2003-11-05 | ナガセケムテックス株式会社 | フォトレジスト剥離剤組成物 |
-
2003
- 2003-06-03 KR KR1020030035683A patent/KR100951364B1/ko active IP Right Grant
-
2004
- 2004-05-17 JP JP2006508529A patent/JP4512092B2/ja not_active Expired - Fee Related
- 2004-05-17 CN CN200480015004A patent/CN100578367C/zh not_active Expired - Fee Related
- 2004-05-17 WO PCT/KR2004/001168 patent/WO2004107057A1/en active Application Filing
- 2004-05-26 TW TW093114977A patent/TWI309757B/zh active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20020006831A (ko) * | 2000-07-13 | 2002-01-26 | 주식회사 동진쎄미켐 | 박막 트랜지스터 액정표시소자용 포토레지스트를 제거하기위한 씬너 조성물 |
KR20020037665A (ko) * | 2000-11-14 | 2002-05-22 | 주식회사 동진쎄미켐 | 감광성 수지 조성물 제거용 씬너 조성물 |
KR20020089087A (ko) * | 2001-05-23 | 2002-11-29 | 주식회사 동진쎄미켐 | 감광성 수지 조성물 제거용 씬너 조성물 |
KR20030069688A (ko) * | 2002-02-22 | 2003-08-27 | 주식회사 동진쎄미켐 | 감광성 수지 조성물을 제거하기 위한 씬너 조성물 |
KR20030078374A (ko) * | 2002-03-29 | 2003-10-08 | 주식회사 동진쎄미켐 | 감광성 수지 제거용 씬너 조성물 |
WO2003083032A1 (en) * | 2002-03-29 | 2003-10-09 | Dongjin Semichem Co., Ltd. | Thinner composition for removing photosensitive resin |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014142635A (ja) * | 2012-12-27 | 2014-08-07 | Fujifilm Corp | レジスト除去液およびレジスト剥離方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2004107057A1 (en) | 2004-12-09 |
TWI309757B (en) | 2009-05-11 |
CN100578367C (zh) | 2010-01-06 |
KR20040104161A (ko) | 2004-12-10 |
CN1799007A (zh) | 2006-07-05 |
TW200504205A (en) | 2005-02-01 |
KR100951364B1 (ko) | 2010-04-08 |
JP4512092B2 (ja) | 2010-07-28 |
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