JP2007528608A - Ｅｕｖ光源光学要素 - Google Patents

Ｅｕｖ光源光学要素 Download PDF

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Publication number
JP2007528608A
JP2007528608A JP2007502841A JP2007502841A JP2007528608A JP 2007528608 A JP2007528608 A JP 2007528608A JP 2007502841 A JP2007502841 A JP 2007502841A JP 2007502841 A JP2007502841 A JP 2007502841A JP 2007528608 A JP2007528608 A JP 2007528608A
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Abandoned
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JP2007502841A
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English (en)
Japanese (ja)
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JP2007528608A5 (enExample
Inventor
ノーバート アール バウアリング
アレクサンダー アイ アーショフ
ティモシー エス ダイアー
ヒュー アール グリノルズ
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サイマー インコーポレイテッド
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Priority claimed from US10/798,740 external-priority patent/US7217940B2/en
Priority claimed from US10/803,526 external-priority patent/US7087914B2/en
Priority claimed from US10/900,839 external-priority patent/US7164144B2/en
Priority claimed from US10/979,945 external-priority patent/US8075732B2/en
Application filed by サイマー インコーポレイテッド filed Critical サイマー インコーポレイテッド
Publication of JP2007528608A publication Critical patent/JP2007528608A/ja
Publication of JP2007528608A5 publication Critical patent/JP2007528608A5/ja
Abandoned legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70175—Lamphouse reflector arrangements or collector mirrors, i.e. collecting light from solid angle upstream of the light source
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J35/00—X-ray tubes
    • H01J35/02—Details
    • H01J35/20—Selection of substances for gas fillings; Means for obtaining or maintaining the desired pressure within the tube, e.g. by gettering

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Environmental & Geological Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • X-Ray Techniques (AREA)
JP2007502841A 2004-03-10 2005-02-24 Ｅｕｖ光源光学要素 Abandoned JP2007528608A (ja)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US10/798,740 US7217940B2 (en) 2003-04-08 2004-03-10 Collector for EUV light source
US10/803,526 US7087914B2 (en) 2004-03-17 2004-03-17 High repetition rate laser produced plasma EUV light source
US10/900,839 US7164144B2 (en) 2004-03-10 2004-07-27 EUV light source
US10/979,945 US8075732B2 (en) 2004-11-01 2004-11-01 EUV collector debris management
US11/021,261 US7193228B2 (en) 2004-03-10 2004-12-22 EUV light source optical elements
PCT/US2005/006199 WO2005091887A2 (en) 2004-03-10 2005-02-24 Euv light source optical elements

Publications (2)

Publication Number Publication Date
JP2007528608A true JP2007528608A (ja) 2007-10-11
JP2007528608A5 JP2007528608A5 (enExample) 2008-04-10

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007502841A Abandoned JP2007528608A (ja) 2004-03-10 2005-02-24 Ｅｕｖ光源光学要素

Country Status (6)

Country Link
US (2) US7193228B2 (enExample)
EP (1) EP1723472A4 (enExample)
JP (1) JP2007528608A (enExample)
KR (1) KR20070006805A (enExample)
TW (1) TWI286871B (enExample)
WO (1) WO2005091887A2 (enExample)

Cited By (20)

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JP2007109968A (ja) * 2005-10-14 2007-04-26 Hoya Corp 多層反射膜付き基板、その製造方法、反射型マスクブランクおよび反射型マスク
JP2007109971A (ja) * 2005-10-14 2007-04-26 Hoya Corp 多層反射膜付き基板、その製造方法、反射型マスクブランクおよび反射型マスク
JP2008526002A (ja) * 2004-12-23 2008-07-17 フラウンホーファー−ゲゼルシャフト ツル フェルデルング デル アンゲヴァンテン フォルシュング エー ファウ Ｅｕｖスペクトル範囲のための熱安定性多層ミラー
JP2010500776A (ja) * 2006-08-16 2010-01-07 サイマー インコーポレイテッド Ｅｕｖ光学器械
JP2012500481A (ja) * 2008-08-21 2012-01-05 エーエスエムエル ホールディング エヌ．ブイ． 高熱伝導率を有するｅｕｖレチクル基板
KR20120017435A (ko) * 2009-04-27 2012-02-28 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 검출기 장치
JP2012156506A (ja) * 2011-01-26 2012-08-16 Asml Netherlands Bv リソグラフィ装置用の反射型光コンポーネントおよびデバイス製造方法
JP2014523641A (ja) * 2011-06-15 2014-09-11 エーエスエムエル ネザーランズ ビー．ブイ． 多層ミラー、多層ミラーを生成する方法およびリソグラフィ装置
KR20140143751A (ko) * 2012-03-08 2014-12-17 칼 짜이스 에스엠테 게엠베하 Euv 파장 범위를 위한 미러, 그러한 미러를 생산하기 위한 방법, 및 그러한 미러를 포함하는 투사 노광 장치
JP2015501527A (ja) * 2011-09-27 2015-01-15 カール・ツァイス・エスエムティー・ゲーエムベーハー Ｅｕｖミラー上に酸化ケイ素から成るキャップ層を生成する方法、ｅｕｖミラー及びｅｕｖリソグラフィ装置
KR20150064087A (ko) * 2012-10-04 2015-06-10 에이에스엠엘 네델란즈 비.브이. 가혹 환경 광학 소자 보호
KR20150130371A (ko) * 2013-03-12 2015-11-23 어플라이드 머티어리얼스, 인코포레이티드 비결정질 층 극자외선 리소그래피 블랭크, 및 그를 위한 제조 및 리소그래피 시스템들
JP2016514279A (ja) * 2013-02-15 2016-05-19 エーエスエムエル ネザーランズ ビー．ブイ． 放射源コレクタ及び製造方法
JP2016531319A (ja) * 2013-08-07 2016-10-06 カール・ツァイス・エスエムティー・ゲーエムベーハー 特にマイクロリソグラフィ投影露光装置のミラー
JP2017506356A (ja) * 2014-02-07 2017-03-02 エーエスエムエル ネザーランズ ビー．ブイ． ブリスタ耐性のある多層キャップを有するｅｕｖ光学素子
JP2018536890A (ja) * 2015-11-11 2018-12-13 エーエスエムエル ネザーランズ ビー．ブイ． 放射システムおよび光デバイス
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WO2019077736A1 (ja) * 2017-10-20 2019-04-25 ギガフォトン株式会社 極端紫外光用ミラー及び極端紫外光生成装置
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US20210057864A1 (en) * 2019-08-19 2021-02-25 Iradion Laser, Inc. Enhanced waveguide surface in gas lasers

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US20050199830A1 (en) 2005-09-15
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