JP2012524989A - リソグラフィ装置および検出装置 - Google Patents
リソグラフィ装置および検出装置 Download PDFInfo
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
- G03F7/706—Aberration measurement
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
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- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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Abstract
【選択図】図5
Description
[0001] 本出願は、2009年4月27日に出願された米国仮出願第61/172,904号の利益を主張し、その全体が参照により本明細書に組み込まれる。
CD = k1λ/NAPS (1)
1.ステップモードにおいては、マスクテーブルMTおよび基板テーブルWTを基本的に静止状態に保ちつつ、放射ビームに付けられたパターン全体を一度にターゲット部分C上に投影する(すなわち、単一静的露光)。その後、基板テーブルWTは、基板の平面内で移動され、それによって別のターゲット部分Cを露光することができる。ステップモードにおいては、露光フィールドの最大サイズによって、単一静的露光時に結像されるターゲット部分Cのサイズが限定される。
2.スキャンモードにおいては、マスクテーブルMTおよび基板テーブルWTを同期的にスキャンする一方で、放射ビームに付けられたパターンをターゲット部分C上に投影する(すなわち、単一動的露光)。マスクテーブルMTに対する基板テーブルWTの速度および方向は、投影システムPSの(縮小)拡大率および像反転特性によって決めることができる。スキャンモードにおいては、露光フィールドの最大サイズによって、単一動的露光時のターゲット部分の幅(非スキャン方向)が限定される一方、スキャン動作の長さによって、ターゲット部分の高さ(スキャン方向)が決まる。
3.別のモードにおいては、プログラマブルパターニングデバイスを保持した状態で、マスクテーブルMTを基本的に静止状態に保ち、また基板テーブルWTを動かす、またはスキャンする一方で、放射ビームに付けられているパターンをターゲット部分C上に投影する。このモードにおいては、通常、パルス放射源が採用されており、さらにプログラマブルパターニングデバイスは、基板テーブルWTの移動後ごとに、またはスキャン中の連続する放射パルスと放射パルスとの間に、必要に応じて更新される。この動作モードは、前述の型のプログラマブルミラーアレイといったプログラマブルパターニングデバイスを利用するマスクレスリソグラフィに容易に適用することができる。
[0083] 発明の概要及び要約の項目は、発明者が想定するような本発明の1つ以上の例示的実施形態について述べることができるが、全部の例示的実施形態を述べることはできず、従って本発明及び請求の範囲をいかなる意味でも制限しないものとする。
Claims (14)
- 検出装置であって、
シンチレーション材料層と、前記シンチレーション材料上に設けられたスペーサ材料層と、前記スペーサ材料上に設けられたスペクトル純度フィルタ層と、を備えるディテクタを含む、検出装置。 - 前記スペーサ材料の厚さは少なくとも20nmである、請求項1に記載の装置。
- 前記スペーサ材料の厚さは少なくとも50nmである、請求項2に記載の装置。
- 前記スペーサ材料は、当該材料の50nm以内でEVU放射の50%未満を吸収する、請求項1に記載の装置。
- 前記スペーサ材料は、当該材料の100nm以内でEVU放射の50%未満を吸収する、請求項4に記載の装置。
- 前記スペーサ材料は、前記シンチレーション材料のシンチレーション発光の波長で実質的に透過性を示す、請求項1に記載の装置。
- 前記スペーサ材料は、シリコン、窒化シリコン、または二酸化シリコンである、請求項1に記載の装置。
- 前記スペクトル純度フィルタ層はジルコニウムまたはクロムである、請求項1に記載の装置。
- 前記シンチレーション材料はGd2O2S:TbまたはYAG:Ceである、請求項1に記載の装置。
- 前記ディテクタは結像ディテクタである、請求項1に記載の装置。
- 前記結像ディテクタはCCDアレイである、請求項10に記載の装置。
- リソグラフィ装置であって
基板を保持する基板テーブルと、
パターン形成された放射ビームを前記基板のターゲット部分上に投影する投影システムと、を含み、
さらに請求項1に記載の検出装置を含む、リソグラフィ装置。 - 前記検出装置は、前記リソグラフィ装置の前記基板テーブル内に設けられる、請求項12に記載のリソグラフィ装置。
- 検出方法であって、
EUV放射を、スペクトル純度フィルタ層を通して、前記スペクトル純度フィルタ層の下に設けられたスペーサ材料層を通して、シンチレーション材料層上に誘導することと、
次いでディテクタを使用して前記シンチレーション材料によって放出されたシンチレーション放射を検出することと、を含む、検出方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US17290409P | 2009-04-27 | 2009-04-27 | |
US61/172,904 | 2009-04-27 | ||
PCT/EP2010/053742 WO2010124910A1 (en) | 2009-04-27 | 2010-03-23 | Lithographic apparatus and detector apparatus |
Publications (2)
Publication Number | Publication Date |
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JP2012524989A true JP2012524989A (ja) | 2012-10-18 |
JP5932635B2 JP5932635B2 (ja) | 2016-06-08 |
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JP2012506422A Expired - Fee Related JP5932635B2 (ja) | 2009-04-27 | 2010-03-23 | リソグラフィ装置および検出装置 |
Country Status (7)
Country | Link |
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US (1) | US8934083B2 (ja) |
JP (1) | JP5932635B2 (ja) |
KR (1) | KR101675048B1 (ja) |
CN (1) | CN102414622A (ja) |
NL (1) | NL2004444A (ja) |
TW (1) | TWI489220B (ja) |
WO (1) | WO2010124910A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2012125647A2 (en) * | 2011-03-16 | 2012-09-20 | Kla-Tencor Corporation | Euv actinic reticle inspection system using imaging sensor with thin film spectral purity filter coating |
WO2013139553A2 (en) * | 2012-03-20 | 2013-09-26 | Asml Netherlands B.V. | Lithographic apparatus, sensor and method |
DE102013202278A1 (de) * | 2013-02-13 | 2014-02-27 | Carl Zeiss Smt Gmbh | Optisches System einer mikrolithographischen Projektionsbelichtungsanlage |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004186691A (ja) * | 2002-12-04 | 2004-07-02 | Asml Netherlands Bv | リソグラフィ装置、デバイス製造方法およびそれにより製造したデバイス |
JP2007201475A (ja) * | 2006-01-26 | 2007-08-09 | Xtreme Technologies Gmbh | Euv放射線のための狭帯域透過フィルタ |
JP2007528608A (ja) * | 2004-03-10 | 2007-10-11 | サイマー インコーポレイテッド | Euv光源光学要素 |
JP2008192987A (ja) * | 2007-02-07 | 2008-08-21 | Nikon Corp | センサ、露光装置、デバイスの製造方法、及びセンサの製造方法 |
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US3891849A (en) * | 1974-01-30 | 1975-06-24 | Westinghouse Electric Corp | Means for integrating erythemal spectral radiation |
DE19936000A1 (de) * | 1999-07-30 | 2001-02-08 | Osram Opto Semiconductors Gmbh | UV-Photodetektor mit verbesserter Empfindlichkeit |
KR100586913B1 (ko) | 2000-08-25 | 2006-06-07 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 장치, 디바이스 제조 방법 및 이것에 의해제조된 디바이스 |
US7154666B2 (en) | 2001-01-26 | 2006-12-26 | Carl Zeiss Smt Ag | Narrow-band spectral filter and the use thereof |
US7561251B2 (en) | 2004-03-29 | 2009-07-14 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7265366B2 (en) * | 2004-03-31 | 2007-09-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7772558B1 (en) * | 2006-03-29 | 2010-08-10 | Radiation Monitoring Devices, Inc. | Multi-layer radiation detector and related methods |
US20090015814A1 (en) | 2007-07-11 | 2009-01-15 | Carl Zeiss Smt Ag | Detector for registering a light intensity, and illumination system equipped with the detector |
-
2010
- 2010-03-23 KR KR1020117028228A patent/KR101675048B1/ko active IP Right Grant
- 2010-03-23 US US13/260,009 patent/US8934083B2/en active Active
- 2010-03-23 CN CN2010800182071A patent/CN102414622A/zh active Pending
- 2010-03-23 JP JP2012506422A patent/JP5932635B2/ja not_active Expired - Fee Related
- 2010-03-23 NL NL2004444A patent/NL2004444A/en not_active Application Discontinuation
- 2010-03-23 WO PCT/EP2010/053742 patent/WO2010124910A1/en active Application Filing
- 2010-04-01 TW TW099110206A patent/TWI489220B/zh not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2004186691A (ja) * | 2002-12-04 | 2004-07-02 | Asml Netherlands Bv | リソグラフィ装置、デバイス製造方法およびそれにより製造したデバイス |
JP2007528608A (ja) * | 2004-03-10 | 2007-10-11 | サイマー インコーポレイテッド | Euv光源光学要素 |
JP2007201475A (ja) * | 2006-01-26 | 2007-08-09 | Xtreme Technologies Gmbh | Euv放射線のための狭帯域透過フィルタ |
JP2008192987A (ja) * | 2007-02-07 | 2008-08-21 | Nikon Corp | センサ、露光装置、デバイスの製造方法、及びセンサの製造方法 |
Also Published As
Publication number | Publication date |
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US8934083B2 (en) | 2015-01-13 |
KR20120017435A (ko) | 2012-02-28 |
KR101675048B1 (ko) | 2016-11-10 |
US20120081683A1 (en) | 2012-04-05 |
CN102414622A (zh) | 2012-04-11 |
TWI489220B (zh) | 2015-06-21 |
WO2010124910A1 (en) | 2010-11-04 |
JP5932635B2 (ja) | 2016-06-08 |
NL2004444A (en) | 2010-10-28 |
TW201109847A (en) | 2011-03-16 |
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