TWI286871B - EUV light source optical elements - Google Patents

EUV light source optical elements Download PDF

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Publication number
TWI286871B
TWI286871B TW094105587A TW94105587A TWI286871B TW I286871 B TWI286871 B TW I286871B TW 094105587 A TW094105587 A TW 094105587A TW 94105587 A TW94105587 A TW 94105587A TW I286871 B TWI286871 B TW I286871B
Authority
TW
Taiwan
Prior art keywords
layer
plasma
binary
generating euv
reflecting element
Prior art date
Application number
TW094105587A
Other languages
English (en)
Chinese (zh)
Other versions
TW200536218A (en
Inventor
Norbert R Bowering
Alexander I Ershov
Timothy S Dyer
Hugh R Grinolds
Original Assignee
Cymer Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/798,740 external-priority patent/US7217940B2/en
Priority claimed from US10/803,526 external-priority patent/US7087914B2/en
Priority claimed from US10/900,839 external-priority patent/US7164144B2/en
Priority claimed from US10/979,945 external-priority patent/US8075732B2/en
Application filed by Cymer Inc filed Critical Cymer Inc
Publication of TW200536218A publication Critical patent/TW200536218A/zh
Application granted granted Critical
Publication of TWI286871B publication Critical patent/TWI286871B/zh

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G21NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21KTECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062Devices having a multilayer structure
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/7015Details of optical elements
    • G03F7/70175Lamphouse reflector arrangements or collector mirrors, i.e. collecting light from solid angle upstream of the light source
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J35/00X-ray tubes
    • H01J35/02Details
    • H01J35/20Selection of substances for gas fillings; Means for obtaining or maintaining the desired pressure within the tube, e.g. by gettering

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Environmental & Geological Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • X-Ray Techniques (AREA)
TW094105587A 2004-03-10 2005-02-24 EUV light source optical elements TWI286871B (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US10/798,740 US7217940B2 (en) 2003-04-08 2004-03-10 Collector for EUV light source
US10/803,526 US7087914B2 (en) 2004-03-17 2004-03-17 High repetition rate laser produced plasma EUV light source
US10/900,839 US7164144B2 (en) 2004-03-10 2004-07-27 EUV light source
US10/979,945 US8075732B2 (en) 2004-11-01 2004-11-01 EUV collector debris management
US11/021,261 US7193228B2 (en) 2004-03-10 2004-12-22 EUV light source optical elements

Publications (2)

Publication Number Publication Date
TW200536218A TW200536218A (en) 2005-11-01
TWI286871B true TWI286871B (en) 2007-09-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW094105587A TWI286871B (en) 2004-03-10 2005-02-24 EUV light source optical elements

Country Status (6)

Country Link
US (2) US7193228B2 (enExample)
EP (1) EP1723472A4 (enExample)
JP (1) JP2007528608A (enExample)
KR (1) KR20070006805A (enExample)
TW (1) TWI286871B (enExample)
WO (1) WO2005091887A2 (enExample)

Families Citing this family (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7843632B2 (en) * 2006-08-16 2010-11-30 Cymer, Inc. EUV optics
DE10150874A1 (de) * 2001-10-04 2003-04-30 Zeiss Carl Optisches Element und Verfahren zu dessen Herstellung sowie ein Lithographiegerät und ein Verfahren zur Herstellung eines Halbleiterbauelements
US7217940B2 (en) * 2003-04-08 2007-05-15 Cymer, Inc. Collector for EUV light source
JP2005235959A (ja) * 2004-02-18 2005-09-02 Canon Inc 光発生装置及び露光装置
US7193228B2 (en) * 2004-03-10 2007-03-20 Cymer, Inc. EUV light source optical elements
DE102004062289B4 (de) * 2004-12-23 2007-07-19 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Thermisch stabiler Multilayer-Spiegel für den EUV-Spektralbereich
US7336416B2 (en) * 2005-04-27 2008-02-26 Asml Netherlands B.V. Spectral purity filter for multi-layer mirror, lithographic apparatus including such multi-layer mirror, method for enlarging the ratio of desired radiation and undesired radiation, and device manufacturing method
US7750326B2 (en) * 2005-06-13 2010-07-06 Asml Netherlands B.V. Lithographic apparatus and cleaning method therefor
JP4703353B2 (ja) * 2005-10-14 2011-06-15 Hoya株式会社 多層反射膜付き基板、その製造方法、反射型マスクブランクおよび反射型マスク
JP4703354B2 (ja) * 2005-10-14 2011-06-15 Hoya株式会社 多層反射膜付き基板、その製造方法、反射型マスクブランクおよび反射型マスク
DE102006006283B4 (de) * 2006-02-10 2015-05-21 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Thermisch stabiler Multilayer-Spiegel für den EUV-Spektralbereich
EP2076801A1 (en) * 2006-10-13 2009-07-08 Media Lario S.r.L. Coated mirrors and their fabication
TWI427334B (zh) * 2007-02-05 2014-02-21 Zeiss Carl Smt Gmbh Euv蝕刻裝置反射光學元件
EP1965229A3 (en) * 2007-02-28 2008-12-10 Corning Incorporated Engineered fluoride-coated elements for laser systems
US7960701B2 (en) 2007-12-20 2011-06-14 Cymer, Inc. EUV light source components and methods for producing, using and refurbishing same
DE102008002403A1 (de) * 2008-06-12 2009-12-17 Carl Zeiss Smt Ag Verfahren zum Herstellen einer Mehrlagen-Beschichtung, optisches Element und optische Anordnung
US8693090B2 (en) * 2008-07-07 2014-04-08 Koninklijke Philips N.V. Extreme UV radiation reflecting element comprising a sputter-resistant material
DE102008040265A1 (de) 2008-07-09 2010-01-14 Carl Zeiss Smt Ag Reflektives optisches Element und Verfahren zu seiner Herstellung
WO2010020337A1 (en) 2008-08-21 2010-02-25 Asml Holding Nv Euv reticle substrates with high thermal conductivity
US7641349B1 (en) 2008-09-22 2010-01-05 Cymer, Inc. Systems and methods for collector mirror temperature control using direct contact heat transfer
US8284815B2 (en) * 2008-10-21 2012-10-09 Cymer, Inc. Very high power laser chamber optical improvements
DE102009017095A1 (de) * 2009-04-15 2010-10-28 Carl Zeiss Smt Ag Spiegel für den EUV-Wellenlängenbereich, Projektionsobjektiv für die Mikrolithographie mit einem solchen Spiegel und Projektionsbelichtungsanlage für die Mikrolithographie mit einem solchen Projektionsobjektiv
US8934083B2 (en) 2009-04-27 2015-01-13 Asml Netherlands B.V. Lithographic apparatus and detector apparatus
US8050380B2 (en) * 2009-05-05 2011-11-01 Media Lario, S.R.L. Zone-optimized mirrors and optical systems using same
US7993937B2 (en) * 2009-09-23 2011-08-09 Tokyo Electron Limited DC and RF hybrid processing system
CN102621815B (zh) * 2011-01-26 2016-12-21 Asml荷兰有限公司 用于光刻设备的反射光学部件及器件制造方法
JP2012222349A (ja) * 2011-04-05 2012-11-12 Asml Netherlands Bv 多層ミラーおよびリソグラフィ装置
WO2012171674A1 (en) * 2011-06-15 2012-12-20 Asml Netherlands B.V. Multilayer mirror, method of producing a multilayer mirror and lithographic apparatus
DE102011083461A1 (de) * 2011-09-27 2013-03-28 Carl Zeiss Smt Gmbh Verfahren zum Erzeugen einer Deckschicht aus Siliziumoxid an einem EUV-Spiegel
DE102012203633A1 (de) * 2012-03-08 2013-09-12 Carl Zeiss Smt Gmbh Spiegel für den EUV-Wellenlängenbereich, Herstellungsverfahren für einen solchen Spiegel und Projektionsbelichtungsanlage mit einem solchen Spiegel
DE102012207141A1 (de) * 2012-04-27 2013-10-31 Carl Zeiss Laser Optics Gmbh Verfahren zur Reparatur von optischen Elementen sowie optisches Element
US10185234B2 (en) * 2012-10-04 2019-01-22 Asml Netherlands B.V. Harsh environment optical element protection
US9773578B2 (en) * 2013-02-15 2017-09-26 Asml Netherlands B.V. Radiation source-collector and method for manufacture
US9632411B2 (en) 2013-03-14 2017-04-25 Applied Materials, Inc. Vapor deposition deposited photoresist, and manufacturing and lithography systems therefor
US9612521B2 (en) * 2013-03-12 2017-04-04 Applied Materials, Inc. Amorphous layer extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor
US9417515B2 (en) 2013-03-14 2016-08-16 Applied Materials, Inc. Ultra-smooth layer ultraviolet lithography mirrors and blanks, and manufacturing and lithography systems therefor
US9354508B2 (en) 2013-03-12 2016-05-31 Applied Materials, Inc. Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor
US20140272684A1 (en) 2013-03-12 2014-09-18 Applied Materials, Inc. Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor
WO2014181858A1 (ja) * 2013-05-09 2014-11-13 株式会社ニコン 光学素子、投影光学系、露光装置及びデバイス製造方法
DE102013107192A1 (de) 2013-07-08 2015-01-08 Carl Zeiss Laser Optics Gmbh Reflektives optisches Element für streifenden Einfall im EUV-Wellenlängenbereich
DE102013215541A1 (de) 2013-08-07 2015-02-12 Carl Zeiss Smt Gmbh Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
FR3010074B1 (fr) * 2013-09-05 2019-08-02 Saint-Gobain Glass France Procede de fabrication d'un materiau comprenant un substrat muni d'une couche fonctionnelle a base d'oxyde d'etain et d'indium
DE102013221550A1 (de) * 2013-10-23 2015-04-23 Carl Zeiss Smt Gmbh Vielschichtstruktur für EUV-Spiegel
US9696467B2 (en) * 2014-01-31 2017-07-04 Corning Incorporated UV and DUV expanded cold mirrors
EP2905637A1 (en) * 2014-02-07 2015-08-12 ASML Netherlands B.V. EUV optical element having blister-resistant multilayer cap
US9869013B2 (en) * 2014-04-25 2018-01-16 Applied Materials, Inc. Ion assisted deposition top coat of rare-earth oxide
US9581890B2 (en) * 2014-07-11 2017-02-28 Applied Materials, Inc. Extreme ultraviolet reflective element with multilayer stack and method of manufacturing thereof
CN108431903A (zh) * 2015-06-30 2018-08-21 塞博利亚·贾斯瓦尔 用于极紫外和软x射线光学器件的涂层
US10359710B2 (en) * 2015-11-11 2019-07-23 Asml Netherlands B.V. Radiation system and optical device
WO2019077736A1 (ja) * 2017-10-20 2019-04-25 ギガフォトン株式会社 極端紫外光用ミラー及び極端紫外光生成装置
US11237475B2 (en) * 2017-11-10 2022-02-01 Asml Netherlands B.V. EUV pellicles
WO2021008856A1 (en) * 2019-07-16 2021-01-21 Asml Netherlands B.V. Oxygen-loss resistant top coating for optical elements
KR102848805B1 (ko) 2019-07-31 2025-08-22 삼성전자주식회사 Euv 레티클 검사 방법, 레티클 제조 방법 및 그를 포함하는 반도체 소자의 제조 방법
US20210057864A1 (en) * 2019-08-19 2021-02-25 Iradion Laser, Inc. Enhanced waveguide surface in gas lasers
DE102019212736A1 (de) * 2019-08-26 2021-03-04 Carl Zeiss Smt Gmbh Optisches Element zur Reflexion von EUV-Strahlung und EUV-Lithographiesystem
KR20220123918A (ko) * 2021-03-02 2022-09-13 에스케이하이닉스 주식회사 극자외선 마스크 및 극자외선 마스크를 이용하여 제조된 포토마스크
US12306481B2 (en) * 2022-06-13 2025-05-20 HyperLight Corporation Diffusion barrier layer in lithium niobate-containing photonic devices

Family Cites Families (121)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2759106A (en) 1951-05-25 1956-08-14 Wolter Hans Optical image-forming mirror system providing for grazing incidence of rays
US3279176A (en) 1959-07-31 1966-10-18 North American Aviation Inc Ion rocket engine
US3150483A (en) 1962-05-10 1964-09-29 Aerospace Corp Plasma generator and accelerator
US3232046A (en) 1962-06-06 1966-02-01 Aerospace Corp Plasma generator and propulsion exhaust system
US3746870A (en) 1970-12-21 1973-07-17 Gen Electric Coated light conduit
US3969628A (en) 1974-04-04 1976-07-13 The United States Of America As Represented By The Secretary Of The Army Intense, energetic electron beam assisted X-ray generator
US4042848A (en) 1974-05-17 1977-08-16 Ja Hyun Lee Hypocycloidal pinch device
US3946332A (en) 1974-06-13 1976-03-23 Samis Michael A High power density continuous wave plasma glow jet laser system
US3961197A (en) 1974-08-21 1976-06-01 The United States Of America As Represented By The United States Energy Research And Development Administration X-ray generator
US3960473A (en) 1975-02-06 1976-06-01 The Glastic Corporation Die structure for forming a serrated rod
US4143278A (en) * 1977-05-16 1979-03-06 Geo. Koch Sons, Inc. Radiation cure reactor
US4162160A (en) 1977-08-25 1979-07-24 Fansteel Inc. Electrical contact material and method for making the same
US4143275A (en) 1977-09-28 1979-03-06 Battelle Memorial Institute Applying radiation
US4203393A (en) 1979-01-04 1980-05-20 Ford Motor Company Plasma jet ignition engine and method
JPS5756668A (en) 1980-09-18 1982-04-05 Nissan Motor Co Ltd Plasma igniter
US4364342A (en) 1980-10-01 1982-12-21 Ford Motor Company Ignition system employing plasma spray
USRE34806E (en) 1980-11-25 1994-12-13 Celestech, Inc. Magnetoplasmadynamic processor, applications thereof and methods
JPS5946105B2 (ja) * 1981-10-27 1984-11-10 日本電信電話株式会社 バイポ−ラ型トランジスタ装置及びその製法
US4538291A (en) 1981-11-09 1985-08-27 Kabushiki Kaisha Suwa Seikosha X-ray source
US4536884A (en) 1982-09-20 1985-08-20 Eaton Corporation Plasma pinch X-ray apparatus
US4504964A (en) 1982-09-20 1985-03-12 Eaton Corporation Laser beam plasma pinch X-ray system
US4633492A (en) 1982-09-20 1986-12-30 Eaton Corporation Plasma pinch X-ray method
US4618971A (en) 1982-09-20 1986-10-21 Eaton Corporation X-ray lithography system
US4507588A (en) 1983-02-28 1985-03-26 Board Of Trustees Operating Michigan State University Ion generating apparatus and method for the use thereof
DE3332711A1 (de) 1983-09-10 1985-03-28 Fa. Carl Zeiss, 7920 Heidenheim Vorrichtung zur erzeugung einer plasmaquelle mit hoher strahlungsintensitaet im roentgenbereich
JPS60175351A (ja) 1984-02-14 1985-09-09 Nippon Telegr & Teleph Corp <Ntt> X線発生装置およびx線露光法
US4561406A (en) 1984-05-25 1985-12-31 Combustion Electromagnetics, Inc. Winged reentrant electromagnetic combustion chamber
US4837794A (en) 1984-10-12 1989-06-06 Maxwell Laboratories Inc. Filter apparatus for use with an x-ray source
US4626193A (en) 1985-08-02 1986-12-02 Itt Corporation Direct spark ignition system
US4774914A (en) 1985-09-24 1988-10-04 Combustion Electromagnetics, Inc. Electromagnetic ignition--an ignition system producing a large size and intense capacitive and inductive spark with an intense electromagnetic field feeding the spark
CA1239486A (en) 1985-10-03 1988-07-19 Rajendra P. Gupta Gas discharge derived annular plasma pinch x-ray source
CA1239487A (en) 1985-10-03 1988-07-19 National Research Council Of Canada Multiple vacuum arc derived plasma pinch x-ray source
US4914500A (en) * 1987-12-04 1990-04-03 At&T Bell Laboratories Method for fabricating semiconductor devices which include sources and drains having metal-containing material regions, and the resulting devices
US4928020A (en) 1988-04-05 1990-05-22 The United States Of America As Represented By The United States Department Of Energy Saturable inductor and transformer structures for magnetic pulse compression
DE3927089C1 (enExample) 1989-08-17 1991-04-25 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 8000 Muenchen, De
US5102776A (en) 1989-11-09 1992-04-07 Cornell Research Foundation, Inc. Method and apparatus for microlithography using x-pinch x-ray source
US5027076A (en) 1990-01-29 1991-06-25 Ball Corporation Open cage density sensor
US5171360A (en) 1990-08-30 1992-12-15 University Of Southern California Method for droplet stream manufacturing
US5259593A (en) 1990-08-30 1993-11-09 University Of Southern California Apparatus for droplet stream manufacturing
US5226948A (en) 1990-08-30 1993-07-13 University Of Southern California Method and apparatus for droplet stream manufacturing
US5175755A (en) 1990-10-31 1992-12-29 X-Ray Optical System, Inc. Use of a kumakhov lens for x-ray lithography
US5126638A (en) 1991-05-13 1992-06-30 Maxwell Laboratories, Inc. Coaxial pseudospark discharge switch
US5142166A (en) 1991-10-16 1992-08-25 Science Research Laboratory, Inc. High voltage pulsed power source
JPH0816720B2 (ja) 1992-04-21 1996-02-21 日本航空電子工業株式会社 軟x線多層膜反射鏡
US5709745A (en) * 1993-01-25 1998-01-20 Ohio Aerospace Institute Compound semi-conductors and controlled doping thereof
US5411224A (en) 1993-04-08 1995-05-02 Dearman; Raymond M. Guard for jet engine
US5504785A (en) * 1993-05-28 1996-04-02 Tv/Com Technologies, Inc. Digital receiver for variable symbol rate communications
US5313481A (en) 1993-09-29 1994-05-17 The United States Of America As Represented By The United States Department Of Energy Copper laser modulator driving assembly including a magnetic compression laser
US5448580A (en) 1994-07-05 1995-09-05 The United States Of America As Represented By The United States Department Of Energy Air and water cooled modulator
US5521031A (en) * 1994-10-20 1996-05-28 At&T Corp. Pattern delineating apparatus for use in the EUV spectrum
US5504795A (en) 1995-02-06 1996-04-02 Plex Corporation Plasma X-ray source
JP3041540B2 (ja) 1995-02-17 2000-05-15 サイマー・インコーポレーテッド パルス電力生成回路およびパルス電力を生成する方法
US5938102A (en) 1995-09-25 1999-08-17 Muntz; Eric Phillip High speed jet soldering system
US6186192B1 (en) 1995-09-25 2001-02-13 Rapid Analysis And Development Company Jet soldering system and method
US5894980A (en) 1995-09-25 1999-04-20 Rapid Analysis Development Comapny Jet soldering system and method
US6276589B1 (en) 1995-09-25 2001-08-21 Speedline Technologies, Inc. Jet soldering system and method
US5894985A (en) 1995-09-25 1999-04-20 Rapid Analysis Development Company Jet soldering system and method
US5861321A (en) * 1995-11-21 1999-01-19 Texas Instruments Incorporated Method for doping epitaxial layers using doped substrate material
US5830336A (en) 1995-12-05 1998-11-03 Minnesota Mining And Manufacturing Company Sputtering of lithium
US6224180B1 (en) 1997-02-21 2001-05-01 Gerald Pham-Van-Diep High speed jet soldering system
US6031241A (en) * 1997-03-11 2000-02-29 University Of Central Florida Capillary discharge extreme ultraviolet lamp source for EUV microlithography and other related applications
US5963616A (en) 1997-03-11 1999-10-05 University Of Central Florida Configurations, materials and wavelengths for EUV lithium plasma discharge lamps
JP3385898B2 (ja) 1997-03-24 2003-03-10 安藤電気株式会社 可変波長半導体レーザ光源
US5936988A (en) 1997-12-15 1999-08-10 Cymer, Inc. High pulse rate pulse power system
US5866871A (en) 1997-04-28 1999-02-02 Birx; Daniel Plasma gun and methods for the use thereof
US6172324B1 (en) 1997-04-28 2001-01-09 Science Research Laboratory, Inc. Plasma focus radiation source
US6566667B1 (en) 1997-05-12 2003-05-20 Cymer, Inc. Plasma focus light source with improved pulse power system
US6452199B1 (en) 1997-05-12 2002-09-17 Cymer, Inc. Plasma focus high energy photon source with blast shield
US6744060B2 (en) 1997-05-12 2004-06-01 Cymer, Inc. Pulse power system for extreme ultraviolet and x-ray sources
US5763930A (en) 1997-05-12 1998-06-09 Cymer, Inc. Plasma focus high energy photon source
US6566668B2 (en) 1997-05-12 2003-05-20 Cymer, Inc. Plasma focus light source with tandem ellipsoidal mirror units
US6815700B2 (en) 1997-05-12 2004-11-09 Cymer, Inc. Plasma focus light source with improved pulse power system
US6586757B2 (en) 1997-05-12 2003-07-01 Cymer, Inc. Plasma focus light source with active and buffer gas control
US6064072A (en) 1997-05-12 2000-05-16 Cymer, Inc. Plasma focus high energy photon source
JPH1138192A (ja) * 1997-07-17 1999-02-12 Nikon Corp 多層膜反射鏡
US6119086A (en) * 1998-04-28 2000-09-12 International Business Machines Corporation Speech coding via speech recognition and synthesis based on pre-enrolled phonetic tokens
US6580517B2 (en) 2000-03-01 2003-06-17 Lambda Physik Ag Absolute wavelength calibration of lithography laser using multiple element or tandem see through hollow cathode lamp
US6285743B1 (en) 1998-09-14 2001-09-04 Nikon Corporation Method and apparatus for soft X-ray generation
JP2000091096A (ja) 1998-09-14 2000-03-31 Nikon Corp X線発生装置
US6031598A (en) 1998-09-25 2000-02-29 Euv Llc Extreme ultraviolet lithography machine
US6307913B1 (en) 1998-10-27 2001-10-23 Jmar Research, Inc. Shaped source of soft x-ray, extreme ultraviolet and ultraviolet radiation
US6228512B1 (en) * 1999-05-26 2001-05-08 The Regents Of The University Of California MoRu/Be multilayers for extreme ultraviolet applications
TWI267704B (en) * 1999-07-02 2006-12-01 Asml Netherlands Bv Capping layer for EUV optical elements
US6746870B1 (en) * 1999-07-23 2004-06-08 The Regents Of The University Of California DNA recombination in eukaryotic cells by the bacteriophage PHIC31 recombination system
US6317448B1 (en) 1999-09-23 2001-11-13 Cymer, Inc. Bandwidth estimating technique for narrow band laser
JP2001110709A (ja) * 1999-10-08 2001-04-20 Nikon Corp 多層膜反射鏡及び露光装置ならびに集積回路の製造方法。
US6377651B1 (en) 1999-10-11 2002-04-23 University Of Central Florida Laser plasma source for extreme ultraviolet lithography using a water droplet target
US6831963B2 (en) 2000-10-20 2004-12-14 University Of Central Florida EUV, XUV, and X-Ray wavelength sources created from laser plasma produced from liquid metal solutions
TWI246872B (en) 1999-12-17 2006-01-01 Asml Netherlands Bv Radiation source for use in lithographic projection apparatus
US6493423B1 (en) 1999-12-24 2002-12-10 Koninklijke Philips Electronics N.V. Method of generating extremely short-wave radiation, method of manufacturing a device by means of said radiation, extremely short-wave radiation source unit and lithographic projection apparatus provided with such a radiation source unit
US6195272B1 (en) 2000-03-16 2001-02-27 Joseph E. Pascente Pulsed high voltage power supply radiography system having a one to one correspondence between low voltage input pulses and high voltage output pulses
DE10016008A1 (de) 2000-03-31 2001-10-11 Zeiss Carl Villagensystem und dessen Herstellung
US7261957B2 (en) * 2000-03-31 2007-08-28 Carl Zeiss Smt Ag Multilayer system with protecting layer system and production method
US6647086B2 (en) 2000-05-19 2003-11-11 Canon Kabushiki Kaisha X-ray exposure apparatus
US6562099B2 (en) 2000-05-22 2003-05-13 The Regents Of The University Of California High-speed fabrication of highly uniform metallic microspheres
US6491737B2 (en) 2000-05-22 2002-12-10 The Regents Of The University Of California High-speed fabrication of highly uniform ultra-small metallic microspheres
US6520402B2 (en) 2000-05-22 2003-02-18 The Regents Of The University Of California High-speed direct writing with metallic microspheres
US6904073B2 (en) 2001-01-29 2005-06-07 Cymer, Inc. High power deep ultraviolet laser with long life optics
JP2002006096A (ja) * 2000-06-23 2002-01-09 Nikon Corp 電磁波発生装置、これを用いた半導体製造装置並びに半導体デバイスの製造方法
US6576912B2 (en) 2001-01-03 2003-06-10 Hugo M. Visser Lithographic projection apparatus equipped with extreme ultraviolet window serving simultaneously as vacuum window
ATE305626T1 (de) * 2001-02-05 2005-10-15 Quantiscript Inc Herstellung von strukturen einer metall/halbleiter-verbindung durch röntgenstrahl/euv-projektionslithographie
US6583068B2 (en) * 2001-03-30 2003-06-24 Intel Corporation Enhanced inspection of extreme ultraviolet mask
US6804327B2 (en) * 2001-04-03 2004-10-12 Lambda Physik Ag Method and apparatus for generating high output power gas discharge based source of extreme ultraviolet radiation and/or soft x-rays
US6396900B1 (en) 2001-05-01 2002-05-28 The Regents Of The University Of California Multilayer films with sharp, stable interfaces for use in EUV and soft X-ray application
US7053988B2 (en) * 2001-05-22 2006-05-30 Carl Zeiss Smt Ag. Optically polarizing retardation arrangement, and microlithography projection exposure machine
KR100446050B1 (ko) * 2001-06-14 2004-08-30 마츠시다 덴코 가부시키가이샤 헤어드라이어
US20030008148A1 (en) 2001-07-03 2003-01-09 Sasa Bajt Optimized capping layers for EUV multilayers
DE10151080C1 (de) 2001-10-10 2002-12-05 Xtreme Tech Gmbh Einrichtung und Verfahren zum Erzeugen von extrem ultravioletter (EUV-)Strahlung auf Basis einer Gasentladung
US6624441B2 (en) * 2002-02-07 2003-09-23 Eagle-Picher Technologies, Llc Homoepitaxial layers of p-type zinc oxide and the fabrication thereof
DE10208705B4 (de) * 2002-02-25 2008-10-30 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Monochromatorspiegel für den EUV-Spektralbereich
US6867420B2 (en) * 2002-06-03 2005-03-15 The Regents Of The University Of California Solid-state detector and optical system for microchip analyzers
US6806006B2 (en) * 2002-07-15 2004-10-19 International Business Machines Corporation Integrated cooling substrate for extreme ultraviolet reticle
US7129010B2 (en) * 2002-08-02 2006-10-31 Schott Ag Substrates for in particular microlithography
US6986971B2 (en) * 2002-11-08 2006-01-17 Freescale Semiconductor, Inc. Reflective mask useful for transferring a pattern using extreme ultraviolet (EUV) radiation and method of making the same
DE102004014954A1 (de) * 2003-03-27 2005-03-10 Hoya Corp Verfahren zur Herstellung eines Glassubstrats für einen Maskenrohling und Verfahren zur Herstellung eines Maskenrohlings
JP4219718B2 (ja) * 2003-03-28 2009-02-04 Hoya株式会社 Euvマスクブランクス用ガラス基板の製造方法及びeuvマスクブランクスの製造方法
US7217940B2 (en) * 2003-04-08 2007-05-15 Cymer, Inc. Collector for EUV light source
US6855984B1 (en) * 2003-10-30 2005-02-15 Texas Instruments Incorporated Process to reduce gate edge drain leakage in semiconductor devices
US7193228B2 (en) * 2004-03-10 2007-03-20 Cymer, Inc. EUV light source optical elements
US7087914B2 (en) * 2004-03-17 2006-08-08 Cymer, Inc High repetition rate laser produced plasma EUV light source
US7164144B2 (en) * 2004-03-10 2007-01-16 Cymer Inc. EUV light source

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TW200536218A (en) 2005-11-01
WO2005091887A2 (en) 2005-10-06
US20050199830A1 (en) 2005-09-15
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JP2007528608A (ja) 2007-10-11
EP1723472A2 (en) 2006-11-22

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