JP2007524249A - 電気的な構成要素と該構成要素の電気的な接続導体とを有するシステム並びに該システムを製造する方法 - Google Patents
電気的な構成要素と該構成要素の電気的な接続導体とを有するシステム並びに該システムを製造する方法 Download PDFInfo
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Abstract
Description
(イ)電気的な接触面を有する構成要素を準備すること、
(ロ)貫通する開口を有する絶縁層を前記構成要素に形成し、該構成要素の接触面を自由に接近可能にすること、
(ハ)接続導体の金属化層を絶縁層の開口を制限する側面に、金属化層が接触面に対し斜めに配向されるように配置すること、
を特徴としている。
(ニ) 構成要素の上に少なくとも1つの絶縁シートが積層されかつ(ホ)絶縁シートに開口が形成されて構成要素の接触面が露出される。絶縁層は構成要素の上に積層された少なくとも1つの絶縁シートにより形成される。この場合には構成要素の表面輪郭が、該構成要素とは反対側で絶縁シートの表面輪郭に模造されるように絶縁シートの少なくとも1部が構成要素の上に積層される。この表面輪郭は構成要素の表面の粗さ又は波状性に関するものではない。前記表面輪郭は例えば構成要素の縁によって与えられている。模造された表面輪郭は特に構成要素だけではなく、構成要素が上に配置される基板によっても与えられている。
−構成要素の接触面に対して斜めに配置された、有利には薄い金属化層を有する接続導体の構成によって、絶縁層の上に設けられた接続導体区分と構成要素とが互いに機械的にほぼ減結合される。
−機械的な減結合によって、熱的に誘発された機械的な応力に基づく当該システムの故障の発生が極端に減少させられる。これは接続導体と構成要素とが異なる膨張係数を有する異なる材料から成っている場合にも当嵌まる。
−当該システムは運転中に比較的に強い熱の発生が見られる出力半導体構成要素の電気的な接触のために特に有利である。
2 構成要素
3 接続導体
4 絶縁層
5 基板
20 接触面
23 角度
25 表面輪郭
30 金属化層
32 層厚さ
33 部分金属化層
34 区分
35 厚さ
36 析出
40 厚さ方向
42 開口
43 側面
44 段部
45 部分絶縁シート
46 領域
47 表面輪郭
48 マトリックス
49 ライン
50 保持体層
51 導電性の層
Claims (26)
- −少なくとも1つの電気的な接触面(20)を有する少なくとも1つの電気的な構成要素を(2)を有し、
−該構成要素(2)の前記接触面(20)を電気的に接触させるための少なくとも1つの電気的な接続導体(3)を有し、
−前記構成要素(2)の上に配置された少なくとも1つの絶縁層(4)を有し、該絶縁層(4)が該絶縁層(4)の厚さ方向(40)でこれを貫通する少なくとも1つの開口(42)を有し、該開口(42)が前記構成要素(2)の接触面(20)に向き合って配置されており、
−前記絶縁層(4)が前記開口(42)を制限する側面(43)を有し、
−前記電気的な接続導体(3)が前記側面(43)に配置された少なくとも1つの金属化層(30)を有しているシステム(1)において、
−前記金属化層(30)が前記接触面(20)に対し斜めに配向されていることを特徴とするシステム。 - 前記金属化層(30)が前記接触面(20)に対し、30°(30°を含む)から80°(80°を含む)までの領域から、特に50°(50°を含む)から70°(70°を含む)までの領域から選択される角度で前記接触面に対し配向されている、請求項1記載のシステム。
- 前記金属化層(30)が1.5μm(0.5μmを含む)から30μm(30μmを含む)までの領域から、特に2.0μm(2.0μmを含む)から20μm(20μmを含む)までの領域から選ばれる層厚さ(32)を有している、請求項1又は2記載のシステム。
- 前記金属化層(30)が少なくとも2つの相上下して配置された部分金属化層(33)を有する多層構造を有している、請求項1から3までのいずれか1項記載のシステム。
- 前記金属化層(30)が配置されている前記絶縁層(4)の側面(43)が少なくとも1つの段部(44)を有している、請求項1から4までのいずれか1項記載のシステム。
- 前記絶縁層(4)が20μm(20μmを含む)から500μm(500μmを含む)までの領域から、特に50μm(50μmを含む)から200μm(200μmを含む)までの領域から選択された層厚さ(41)を有している、請求項1から5までのいずれか1項記載のシステム。
- 相上下して配置された2つの部分絶縁層(45)を有する多層構造を前記絶縁層(4)が有している、請求項1から6までのいずれか1項記載のシステム。
- 前記絶縁層(4)が前記構成要素(2)の上に関相された絶縁シートから形成されている、請求項1から6までのいずれか1項記載のシステム。
- 前記絶縁シート(4)の少なくとも一部分が前記構成要素(2)の上に、該構成要素(2)の表面輪郭(25)が該構成要素(2)とは反対側で前記絶縁シート(4)の前記部分の表面輪郭(47)に模造されるように積層されている、請求項8記載のシステム。
- 前記接続導体(3)が前記絶縁層(4)の上に配置された少なくとも1区分(34)を有しかつ該区分(34)が前記金属化層(30)の層厚さ(32)より大きい厚さ(35)を有している、請求項1から9までのいずれか1項記載のシステム。
- 前記接続導体(3)の前記区分(34)が電気的な析出(36)を有している、請求項10記載のシステム。
- 前期金属化層(30)及び/又は前記電気的な析出(36)がアルミニウム、金、銅、モリブデン、銀、チタン及び/又はタングステンのグループから選ばれた金属を有している、請求項11記載のシステム。
- 前記構成要素が半導体構成要素である、請求項1から12までのいずれか1項記載のシステム。
- 前記半導体構成要素が出力半導体構成要素である、請求項13記載のシステム。
- 前記出力半導体構成要素がDiode,MOSFET,IGBT,Tyristor及び/又はBipolar−Transistorのグループから選出されている、請求項14記載のシステム。
- 前記絶縁層(4)がライン(49)又はマトリックス(48)を形成する多数の開口(42)を有している、請求項1から15までのいずれか1項記載のシステム。
- 請求項1から16までのいずれか1項記載のシステム(1)を製造する方法において、
(a) 電気的な接触面(20)を有する構成要素(2)を準備すること、
(b) 前記構成要素(2)の上に、貫通する開口(42)を有する絶縁層(4)を形成し、前記構成要素(2)の接触面(20)を自由に接近可能にすること、
(c)前記接続導体(3)の前記金属化層(30)を前記絶縁層(4)の前期開口(42)を制限する側面(43)に、前記金属化層(30)が前記接触面(20)に対して斜めに配向されるように配置すること、
以上(a),(b),(c)の方法ステップを特徴とする、請求項1から16までのいずれか1項記載のシステムを製造する方法。 - 前記構成要素(2)の上に前記絶縁層(4)を形成するために、
(d) 少なくとも1つの絶縁シート(4)を前記構成要素(2)の上に積層すること、
(e) 前記絶縁シート(4)に前記開口(42)を形成し、前記構成要素(2)の前記接触面(20)を露出させること、
以上(d),(e)方法ステップを有している、請求項17記載の方法。 - 前記絶縁シート(4)の積層を真空下で行なう、請求項18記載の方法。
- 前記絶縁シート(4)に前記開口(42)に形成することをレーザ切除で行なう、請求項18又は19記載の方法。
- 前記構成要素(2)の上に前記絶縁層(4)を形成するためにラッカを当該構成要素(2)に施すプリント方法を実施する、請求項17から20までのいずれか1項記載の方法。
- 感光性のラッカを使用する、請求項21記載の方法。
- 前記構成要素の上に前記金属化層(30)を配置するため及び/又は前記絶縁層(4)を形成するために蒸発析出方法を実施する、請求項17から22までのいずれか1項記載の方法。
- 前記絶縁層の前記側面に前記金属化層を配置する前及び/又は配置した後で前記絶縁層の上に、前記金属化層(30)の層厚さ(32)よりも大きな厚さ(35)を有する接続導体区分(34)を形成する、請求項17から23までのいずれか1項記載の方法。
- 前記絶縁層(4)の上に前記接続導体(34)を形成するために金属が電気的に析出される、請求項24記載の方法。
- 前記接続導体区分(34)を形成する間、前記絶縁層(4)の前記開口(42)を閉じる、請求項24又は25記載の方法。
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US20090079057A1 (en) * | 2007-09-24 | 2009-03-26 | Infineon Technologies Ag | Integrated circuit device |
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US20080001244A1 (en) | 2008-01-03 |
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HK1104379A1 (en) | 2008-01-11 |
WO2005083785A1 (de) | 2005-09-09 |
KR101124112B1 (ko) | 2012-03-21 |
EP1719172A1 (de) | 2006-11-08 |
DE102004009296A1 (de) | 2005-09-22 |
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