JP2007522655A5 - - Google Patents

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Publication number
JP2007522655A5
JP2007522655A5 JP2006551018A JP2006551018A JP2007522655A5 JP 2007522655 A5 JP2007522655 A5 JP 2007522655A5 JP 2006551018 A JP2006551018 A JP 2006551018A JP 2006551018 A JP2006551018 A JP 2006551018A JP 2007522655 A5 JP2007522655 A5 JP 2007522655A5
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JP
Japan
Prior art keywords
transistor
voltage
threshold voltage
change
aging
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JP2006551018A
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English (en)
Japanese (ja)
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JP5073292B2 (ja
JP2007522655A (ja
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Priority claimed from PCT/US2004/001772 external-priority patent/WO2005081258A1/en
Publication of JP2007522655A publication Critical patent/JP2007522655A/ja
Publication of JP2007522655A5 publication Critical patent/JP2007522655A5/ja
Application granted granted Critical
Publication of JP5073292B2 publication Critical patent/JP5073292B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2006551018A 2004-01-23 2004-01-23 ホット・キャリアでプログラムされるワン・タイム・プログラマブル（ｏｔｐ）メモリのための方法および装置 Expired - Fee Related JP5073292B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2004/001772 WO2005081258A1 (en) 2004-01-23 2004-01-23 Method and apparatus for hot carrier programmed one time programmable (otp) memory

Publications (3)

Publication Number Publication Date
JP2007522655A JP2007522655A (ja) 2007-08-09
JP2007522655A5 true JP2007522655A5 (https=) 2012-08-02
JP5073292B2 JP5073292B2 (ja) 2012-11-14

Family

ID=34887932

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006551018A Expired - Fee Related JP5073292B2 (ja) 2004-01-23 2004-01-23 ホット・キャリアでプログラムされるワン・タイム・プログラマブル（ｏｔｐ）メモリのための方法および装置

Country Status (6)

Country Link
US (1) US7764541B2 (https=)
EP (1) EP1709646B1 (https=)
JP (1) JP5073292B2 (https=)
KR (1) KR101084467B1 (https=)
DE (1) DE602004014412D1 (https=)
WO (1) WO2005081258A1 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2075798A1 (en) * 2007-12-25 2009-07-01 TPO Displays Corp. Storage data unit using hot carrier stressing
US20110156157A1 (en) * 2009-06-05 2011-06-30 Cambridge Silicon Radio Ltd. One-time programmable charge-trapping non-volatile memory device
US20100308415A1 (en) * 2009-06-05 2010-12-09 Cambridge Silicon Radio Ltd. Analogue thin-oxide mosfet
JP2012059996A (ja) * 2010-09-10 2012-03-22 Elpida Memory Inc 半導体装置の製造方法
US8530283B2 (en) 2011-09-14 2013-09-10 Semiconductor Components Industries, Llc Process for forming an electronic device including a nonvolatile memory structure having an antifuse component
US8741697B2 (en) 2011-09-14 2014-06-03 Semiconductor Components Industries, Llc Electronic device including a nonvolatile memory structure having an antifuse component and a process of forming the same
US8724364B2 (en) 2011-09-14 2014-05-13 Semiconductor Components Industries, Llc Electronic device including a nonvolatile memory structure having an antifuse component and a process of using the same
JP2015142175A (ja) 2014-01-27 2015-08-03 株式会社東芝 プログラマブル論理回路および不揮発性ｆｐｇａ
JP2015230919A (ja) 2014-06-03 2015-12-21 株式会社東芝 不揮発性メモリ、この不揮発性メモリを用いた不揮発性プログラマブルロジックスイッチおよび不揮発性プログラマブルロジック回路
TW201606779A (zh) * 2014-08-05 2016-02-16 創傑科技股份有限公司 電子裝置及其電子熔絲
US10290352B2 (en) * 2015-02-27 2019-05-14 Qualcomm Incorporated System, apparatus, and method of programming a one-time programmable memory circuit having dual programming regions

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62229600A (ja) * 1986-03-31 1987-10-08 Toshiba Corp 不揮発性半導体記憶装置
US5257225A (en) * 1992-03-12 1993-10-26 Micron Technology, Inc. Method for programming programmable devices by utilizing single or multiple pulses varying in pulse width and amplitude
US5694356A (en) * 1994-11-02 1997-12-02 Invoice Technology, Inc. High resolution analog storage EPROM and flash EPROM
US6127700A (en) * 1995-09-12 2000-10-03 National Semiconductor Corporation Field-effect transistor having local threshold-adjust doping
FR2770019B1 (fr) * 1997-10-20 2000-01-28 Sgs Thomson Microelectronics Point memoire mos
JP4316028B2 (ja) * 1998-07-29 2009-08-19 Ｏｋｉセミコンダクタ宮城株式会社 半導体記憶装置、その製造方法及びそのデータ書き込み方法
US6521958B1 (en) * 1999-08-26 2003-02-18 Micron Technology, Inc. MOSFET technology for programmable address decode and correction
JP4697993B2 (ja) * 1999-11-25 2011-06-08 スパンション エルエルシー 不揮発性半導体メモリ装置の制御方法
US6384448B1 (en) * 2000-02-28 2002-05-07 Micron Technology, Inc. P-channel dynamic flash memory cells with ultrathin tunnel oxides
US6512700B1 (en) * 2001-09-20 2003-01-28 Agere Systems Inc. Non-volatile memory cell having channel initiated secondary electron injection programming mechanism
DE10224956A1 (de) * 2002-06-05 2004-01-08 Infineon Technologies Ag Verfahren zur Einstellung der Einsatzspannung eines Feldeffekttansistors, Feldeffekttransistor sowie integrierte Schaltung
WO2004053886A1 (en) * 2002-12-12 2004-06-24 Koninklijke Philips Electronics N.V. One-time programmable memory device
US6920067B2 (en) * 2002-12-25 2005-07-19 Ememory Technology Inc. Integrated circuit embedded with single-poly non-volatile memory
US7046549B2 (en) * 2003-12-31 2006-05-16 Solid State System Co., Ltd. Nonvolatile memory structure

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