DE602004014412D1 - Verfahren und vorrichtung zum programmieren eines - Google Patents

Verfahren und vorrichtung zum programmieren eines

Info

Publication number
DE602004014412D1
DE602004014412D1 DE602004014412T DE602004014412T DE602004014412D1 DE 602004014412 D1 DE602004014412 D1 DE 602004014412D1 DE 602004014412 T DE602004014412 T DE 602004014412T DE 602004014412 T DE602004014412 T DE 602004014412T DE 602004014412 D1 DE602004014412 D1 DE 602004014412D1
Authority
DE
Germany
Prior art keywords
programming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004014412T
Other languages
German (de)
English (en)
Inventor
Ross Alan Kohler
Richard Joseph Mcpartland
Ranbir Singh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agere Systems LLC
Original Assignee
Agere Systems LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agere Systems LLC filed Critical Agere Systems LLC
Publication of DE602004014412D1 publication Critical patent/DE602004014412D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
DE602004014412T 2004-01-23 2004-01-23 Verfahren und vorrichtung zum programmieren eines Expired - Lifetime DE602004014412D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2004/001772 WO2005081258A1 (en) 2004-01-23 2004-01-23 Method and apparatus for hot carrier programmed one time programmable (otp) memory

Publications (1)

Publication Number Publication Date
DE602004014412D1 true DE602004014412D1 (de) 2008-07-24

Family

ID=34887932

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004014412T Expired - Lifetime DE602004014412D1 (de) 2004-01-23 2004-01-23 Verfahren und vorrichtung zum programmieren eines

Country Status (6)

Country Link
US (1) US7764541B2 (https=)
EP (1) EP1709646B1 (https=)
JP (1) JP5073292B2 (https=)
KR (1) KR101084467B1 (https=)
DE (1) DE602004014412D1 (https=)
WO (1) WO2005081258A1 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2075798A1 (en) * 2007-12-25 2009-07-01 TPO Displays Corp. Storage data unit using hot carrier stressing
US20110156157A1 (en) * 2009-06-05 2011-06-30 Cambridge Silicon Radio Ltd. One-time programmable charge-trapping non-volatile memory device
US20100308415A1 (en) * 2009-06-05 2010-12-09 Cambridge Silicon Radio Ltd. Analogue thin-oxide mosfet
JP2012059996A (ja) * 2010-09-10 2012-03-22 Elpida Memory Inc 半導体装置の製造方法
US8530283B2 (en) 2011-09-14 2013-09-10 Semiconductor Components Industries, Llc Process for forming an electronic device including a nonvolatile memory structure having an antifuse component
US8741697B2 (en) 2011-09-14 2014-06-03 Semiconductor Components Industries, Llc Electronic device including a nonvolatile memory structure having an antifuse component and a process of forming the same
US8724364B2 (en) 2011-09-14 2014-05-13 Semiconductor Components Industries, Llc Electronic device including a nonvolatile memory structure having an antifuse component and a process of using the same
JP2015142175A (ja) 2014-01-27 2015-08-03 株式会社東芝 プログラマブル論理回路および不揮発性ｆｐｇａ
JP2015230919A (ja) 2014-06-03 2015-12-21 株式会社東芝 不揮発性メモリ、この不揮発性メモリを用いた不揮発性プログラマブルロジックスイッチおよび不揮発性プログラマブルロジック回路
TW201606779A (zh) * 2014-08-05 2016-02-16 創傑科技股份有限公司 電子裝置及其電子熔絲
US10290352B2 (en) * 2015-02-27 2019-05-14 Qualcomm Incorporated System, apparatus, and method of programming a one-time programmable memory circuit having dual programming regions

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62229600A (ja) * 1986-03-31 1987-10-08 Toshiba Corp 不揮発性半導体記憶装置
US5257225A (en) * 1992-03-12 1993-10-26 Micron Technology, Inc. Method for programming programmable devices by utilizing single or multiple pulses varying in pulse width and amplitude
US5694356A (en) * 1994-11-02 1997-12-02 Invoice Technology, Inc. High resolution analog storage EPROM and flash EPROM
US6127700A (en) * 1995-09-12 2000-10-03 National Semiconductor Corporation Field-effect transistor having local threshold-adjust doping
FR2770019B1 (fr) * 1997-10-20 2000-01-28 Sgs Thomson Microelectronics Point memoire mos
JP4316028B2 (ja) * 1998-07-29 2009-08-19 Ｏｋｉセミコンダクタ宮城株式会社 半導体記憶装置、その製造方法及びそのデータ書き込み方法
US6521958B1 (en) * 1999-08-26 2003-02-18 Micron Technology, Inc. MOSFET technology for programmable address decode and correction
JP4697993B2 (ja) * 1999-11-25 2011-06-08 スパンション エルエルシー 不揮発性半導体メモリ装置の制御方法
US6384448B1 (en) * 2000-02-28 2002-05-07 Micron Technology, Inc. P-channel dynamic flash memory cells with ultrathin tunnel oxides
US6512700B1 (en) * 2001-09-20 2003-01-28 Agere Systems Inc. Non-volatile memory cell having channel initiated secondary electron injection programming mechanism
DE10224956A1 (de) * 2002-06-05 2004-01-08 Infineon Technologies Ag Verfahren zur Einstellung der Einsatzspannung eines Feldeffekttansistors, Feldeffekttransistor sowie integrierte Schaltung
WO2004053886A1 (en) * 2002-12-12 2004-06-24 Koninklijke Philips Electronics N.V. One-time programmable memory device
US6920067B2 (en) * 2002-12-25 2005-07-19 Ememory Technology Inc. Integrated circuit embedded with single-poly non-volatile memory
US7046549B2 (en) * 2003-12-31 2006-05-16 Solid State System Co., Ltd. Nonvolatile memory structure

Also Published As

Publication number Publication date
US20070274126A1 (en) 2007-11-29
JP5073292B2 (ja) 2012-11-14
US7764541B2 (en) 2010-07-27
WO2005081258A1 (en) 2005-09-01
EP1709646B1 (en) 2008-06-11
KR101084467B1 (ko) 2011-11-21
JP2007522655A (ja) 2007-08-09
EP1709646A1 (en) 2006-10-11
KR20070003870A (ko) 2007-01-05

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