KR101084467B1 - 1회 프로그램 가능한 메모리를 프로그램하는 방법, 메모리, 메모리 소자 및 집적 회로 - Google Patents

1회 프로그램 가능한 메모리를 프로그램하는 방법, 메모리, 메모리 소자 및 집적 회로 Download PDF

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KR101084467B1
KR101084467B1 KR1020067016948A KR20067016948A KR101084467B1 KR 101084467 B1 KR101084467 B1 KR 101084467B1 KR 1020067016948 A KR1020067016948 A KR 1020067016948A KR 20067016948 A KR20067016948 A KR 20067016948A KR 101084467 B1 KR101084467 B1 KR 101084467B1
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South Korea
Prior art keywords
transistors
transistor
delete delete
threshold voltage
programmable memory
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KR20070003870A (ko
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로스 알랜 코흘러
리차드 죠셉 맥파틀랜드
란비르 싱
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에이저 시스템즈 인크
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Assigned to 아바고 테크놀로지스 제너럴 아이피 (싱가포르) 피티이 리미티드 reassignment 아바고 테크놀로지스 제너럴 아이피 (싱가포르) 피티이 리미티드 권리의 전부이전등록 Assignors: 에이저 시스템즈 엘엘시
Assigned to 아바고 테크놀로지스 인터내셔널 세일즈 피티이 리미티드 reassignment 아바고 테크놀로지스 인터내셔널 세일즈 피티이 리미티드 권리의 전부이전등록 Assignors: 아바고 테크놀로지스 제너럴 아이피 (싱가포르) 피티이 리미티드
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices

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  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
KR1020067016948A 2004-01-23 2004-01-23 1회 프로그램 가능한 메모리를 프로그램하는 방법, 메모리, 메모리 소자 및 집적 회로 Expired - Fee Related KR101084467B1 (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2004/001772 WO2005081258A1 (en) 2004-01-23 2004-01-23 Method and apparatus for hot carrier programmed one time programmable (otp) memory

Publications (2)

Publication Number Publication Date
KR20070003870A KR20070003870A (ko) 2007-01-05
KR101084467B1 true KR101084467B1 (ko) 2011-11-21

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Country Status (6)

Country Link
US (1) US7764541B2 (https=)
EP (1) EP1709646B1 (https=)
JP (1) JP5073292B2 (https=)
KR (1) KR101084467B1 (https=)
DE (1) DE602004014412D1 (https=)
WO (1) WO2005081258A1 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2075798A1 (en) * 2007-12-25 2009-07-01 TPO Displays Corp. Storage data unit using hot carrier stressing
US20110156157A1 (en) * 2009-06-05 2011-06-30 Cambridge Silicon Radio Ltd. One-time programmable charge-trapping non-volatile memory device
US20100308415A1 (en) * 2009-06-05 2010-12-09 Cambridge Silicon Radio Ltd. Analogue thin-oxide mosfet
JP2012059996A (ja) * 2010-09-10 2012-03-22 Elpida Memory Inc 半導体装置の製造方法
US8530283B2 (en) 2011-09-14 2013-09-10 Semiconductor Components Industries, Llc Process for forming an electronic device including a nonvolatile memory structure having an antifuse component
US8741697B2 (en) 2011-09-14 2014-06-03 Semiconductor Components Industries, Llc Electronic device including a nonvolatile memory structure having an antifuse component and a process of forming the same
US8724364B2 (en) 2011-09-14 2014-05-13 Semiconductor Components Industries, Llc Electronic device including a nonvolatile memory structure having an antifuse component and a process of using the same
JP2015142175A (ja) 2014-01-27 2015-08-03 株式会社東芝 プログラマブル論理回路および不揮発性ｆｐｇａ
JP2015230919A (ja) 2014-06-03 2015-12-21 株式会社東芝 不揮発性メモリ、この不揮発性メモリを用いた不揮発性プログラマブルロジックスイッチおよび不揮発性プログラマブルロジック回路
TW201606779A (zh) * 2014-08-05 2016-02-16 創傑科技股份有限公司 電子裝置及其電子熔絲
US10290352B2 (en) * 2015-02-27 2019-05-14 Qualcomm Incorporated System, apparatus, and method of programming a one-time programmable memory circuit having dual programming regions

Citations (2)

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Publication number Priority date Publication date Assignee Title
EP0239968A2 (en) * 1986-03-31 1987-10-07 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
US6512700B1 (en) * 2001-09-20 2003-01-28 Agere Systems Inc. Non-volatile memory cell having channel initiated secondary electron injection programming mechanism

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US5257225A (en) * 1992-03-12 1993-10-26 Micron Technology, Inc. Method for programming programmable devices by utilizing single or multiple pulses varying in pulse width and amplitude
US5694356A (en) * 1994-11-02 1997-12-02 Invoice Technology, Inc. High resolution analog storage EPROM and flash EPROM
US6127700A (en) * 1995-09-12 2000-10-03 National Semiconductor Corporation Field-effect transistor having local threshold-adjust doping
FR2770019B1 (fr) * 1997-10-20 2000-01-28 Sgs Thomson Microelectronics Point memoire mos
JP4316028B2 (ja) * 1998-07-29 2009-08-19 Ｏｋｉセミコンダクタ宮城株式会社 半導体記憶装置、その製造方法及びそのデータ書き込み方法
US6521958B1 (en) * 1999-08-26 2003-02-18 Micron Technology, Inc. MOSFET technology for programmable address decode and correction
JP4697993B2 (ja) * 1999-11-25 2011-06-08 スパンション エルエルシー 不揮発性半導体メモリ装置の制御方法
US6384448B1 (en) * 2000-02-28 2002-05-07 Micron Technology, Inc. P-channel dynamic flash memory cells with ultrathin tunnel oxides
DE10224956A1 (de) * 2002-06-05 2004-01-08 Infineon Technologies Ag Verfahren zur Einstellung der Einsatzspannung eines Feldeffekttansistors, Feldeffekttransistor sowie integrierte Schaltung
WO2004053886A1 (en) * 2002-12-12 2004-06-24 Koninklijke Philips Electronics N.V. One-time programmable memory device
US6920067B2 (en) * 2002-12-25 2005-07-19 Ememory Technology Inc. Integrated circuit embedded with single-poly non-volatile memory
US7046549B2 (en) * 2003-12-31 2006-05-16 Solid State System Co., Ltd. Nonvolatile memory structure

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0239968A2 (en) * 1986-03-31 1987-10-07 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
US6512700B1 (en) * 2001-09-20 2003-01-28 Agere Systems Inc. Non-volatile memory cell having channel initiated secondary electron injection programming mechanism

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Publication number Publication date
US20070274126A1 (en) 2007-11-29
JP5073292B2 (ja) 2012-11-14
US7764541B2 (en) 2010-07-27
WO2005081258A1 (en) 2005-09-01
EP1709646B1 (en) 2008-06-11
DE602004014412D1 (de) 2008-07-24
JP2007522655A (ja) 2007-08-09
EP1709646A1 (en) 2006-10-11
KR20070003870A (ko) 2007-01-05

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