JP2007507905A5 - - Google Patents
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- Publication number
- JP2007507905A5 JP2007507905A5 JP2006534203A JP2006534203A JP2007507905A5 JP 2007507905 A5 JP2007507905 A5 JP 2007507905A5 JP 2006534203 A JP2006534203 A JP 2006534203A JP 2006534203 A JP2006534203 A JP 2006534203A JP 2007507905 A5 JP2007507905 A5 JP 2007507905A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- schottky
- etching
- gate electrode
- lateral
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims 21
- 238000000034 method Methods 0.000 claims 20
- 239000004065 semiconductor Substances 0.000 claims 20
- 238000005530 etching Methods 0.000 claims 18
- 239000012535 impurity Substances 0.000 claims 8
- 229910052751 metal Inorganic materials 0.000 claims 3
- 239000002184 metal Substances 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- 238000000151 deposition Methods 0.000 claims 2
- -1 palladium silicon compound Chemical class 0.000 claims 2
- 239000010409 thin film Substances 0.000 claims 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 claims 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims 1
- DSJHYZNNAZPDNA-UHFFFAOYSA-N [Si][Ir] Chemical compound [Si][Ir] DSJHYZNNAZPDNA-UHFFFAOYSA-N 0.000 claims 1
- 238000000137 annealing Methods 0.000 claims 1
- 229910052787 antimony Inorganic materials 0.000 claims 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 239000010408 film Substances 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 239000012212 insulator Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 229910021339 platinum silicide Inorganic materials 0.000 claims 1
- 229910052761 rare earth metal Inorganic materials 0.000 claims 1
- 230000001105 regulatory effect Effects 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US50914203P | 2003-10-03 | 2003-10-03 | |
| PCT/US2004/032539 WO2005036631A1 (en) | 2003-10-03 | 2004-10-04 | Schottky-barrier mosfet manufacturing method using isotropic etch process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007507905A JP2007507905A (ja) | 2007-03-29 |
| JP2007507905A5 true JP2007507905A5 (enExample) | 2007-11-22 |
Family
ID=34434946
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006534203A Pending JP2007507905A (ja) | 2003-10-03 | 2004-10-04 | 等方性エッチングプロセスを使ったショットキーバリアｍｏｓｆｅｔ製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7291524B2 (enExample) |
| EP (1) | EP1676305A1 (enExample) |
| JP (1) | JP2007507905A (enExample) |
| CN (1) | CN1868045A (enExample) |
| RU (1) | RU2006114833A (enExample) |
| WO (1) | WO2005036631A1 (enExample) |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6303479B1 (en) * | 1999-12-16 | 2001-10-16 | Spinnaker Semiconductor, Inc. | Method of manufacturing a short-channel FET with Schottky-barrier source and drain contacts |
| US7393733B2 (en) | 2004-12-01 | 2008-07-01 | Amberwave Systems Corporation | Methods of forming hybrid fin field-effect transistor structures |
| KR100560432B1 (ko) * | 2004-12-21 | 2006-03-13 | 한국전자통신연구원 | Ｎ형 쇼트키 장벽 관통 트랜지스터 소자 및 제조 방법 |
| US9153645B2 (en) | 2005-05-17 | 2015-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication |
| US8324660B2 (en) | 2005-05-17 | 2012-12-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication |
| WO2006137497A1 (ja) * | 2005-06-24 | 2006-12-28 | Mitsubishi Gas Chemical Company, Inc. | メタル材料用エッチング剤組成物およびそれを用いた半導体デバイスの製造方法 |
| WO2007101120A1 (en) * | 2006-02-23 | 2007-09-07 | Acorn Technologies, Inc. | Method for making semiconductor insulated-gate field-effect transistor having multilayer deposited metal source (s) and/or drain (s) |
| WO2007112066A2 (en) | 2006-03-24 | 2007-10-04 | Amberwave Systems Corporation | Lattice-mismatched semiconductor structures and related methods for device fabrication |
| EP2062290B1 (en) | 2006-09-07 | 2019-08-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Defect reduction using aspect ratio trapping |
| US7875958B2 (en) | 2006-09-27 | 2011-01-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures |
| WO2008039495A1 (en) | 2006-09-27 | 2008-04-03 | Amberwave Systems Corporation | Tri-gate field-effect transistors formed by aspect ratio trapping |
| WO2008051503A2 (en) | 2006-10-19 | 2008-05-02 | Amberwave Systems Corporation | Light-emitter-based devices with lattice-mismatched semiconductor structures |
| US9508890B2 (en) | 2007-04-09 | 2016-11-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photovoltaics on silicon |
| US7825328B2 (en) | 2007-04-09 | 2010-11-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Nitride-based multi-junction solar cell modules and methods for making the same |
| US8237151B2 (en) | 2009-01-09 | 2012-08-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Diode-based devices and methods for making the same |
| US8304805B2 (en) | 2009-01-09 | 2012-11-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor diodes fabricated by aspect ratio trapping with coalesced films |
| US7553717B2 (en) * | 2007-05-11 | 2009-06-30 | Texas Instruments Incorporated | Recess etch for epitaxial SiGe |
| US8329541B2 (en) | 2007-06-15 | 2012-12-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | InP-based transistor fabrication |
| JP2010538495A (ja) | 2007-09-07 | 2010-12-09 | アンバーウェーブ・システムズ・コーポレーション | 多接合太陽電池 |
| US8183667B2 (en) | 2008-06-03 | 2012-05-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Epitaxial growth of crystalline material |
| US8274097B2 (en) | 2008-07-01 | 2012-09-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Reduction of edge effects from aspect ratio trapping |
| US8981427B2 (en) | 2008-07-15 | 2015-03-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Polishing of small composite semiconductor materials |
| CN102160145B (zh) | 2008-09-19 | 2013-08-21 | 台湾积体电路制造股份有限公司 | 通过外延层过成长的元件形成 |
| US20100072515A1 (en) | 2008-09-19 | 2010-03-25 | Amberwave Systems Corporation | Fabrication and structures of crystalline material |
| US8253211B2 (en) | 2008-09-24 | 2012-08-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor sensor structures with reduced dislocation defect densities |
| CN102379046B (zh) | 2009-04-02 | 2015-06-17 | 台湾积体电路制造股份有限公司 | 从晶体材料的非极性平面形成的器件及其制作方法 |
| US8513765B2 (en) | 2010-07-19 | 2013-08-20 | International Business Machines Corporation | Formation method and structure for a well-controlled metallic source/drain semiconductor device |
| US9691898B2 (en) * | 2013-12-19 | 2017-06-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Germanium profile for channel strain |
| CN103745929A (zh) * | 2013-12-24 | 2014-04-23 | 上海新傲科技股份有限公司 | 肖特基势垒mosfet的制备方法 |
| JP6697909B2 (ja) * | 2016-03-15 | 2020-05-27 | エイブリック株式会社 | 半導体装置とその製造方法 |
| US10249542B2 (en) * | 2017-01-12 | 2019-04-02 | International Business Machines Corporation | Self-aligned doping in source/drain regions for low contact resistance |
| RU2688861C1 (ru) * | 2018-03-12 | 2019-05-22 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ) | Способ изготовления полупроводникового прибора |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61237470A (ja) * | 1985-04-15 | 1986-10-22 | Hitachi Ltd | 半導体装置 |
| US5834793A (en) | 1985-12-27 | 1998-11-10 | Kabushiki Kaisha Toshiba | Semiconductor devices |
| JP3761918B2 (ja) * | 1994-09-13 | 2006-03-29 | 株式会社東芝 | 半導体装置の製造方法 |
| US6784035B2 (en) | 2002-01-23 | 2004-08-31 | Spinnaker Semiconductor, Inc. | Field effect transistor having source and/or drain forming Schottky or Schottky-like contact with strained semiconductor substrate |
| US6303479B1 (en) | 1999-12-16 | 2001-10-16 | Spinnaker Semiconductor, Inc. | Method of manufacturing a short-channel FET with Schottky-barrier source and drain contacts |
| JP3833903B2 (ja) * | 2000-07-11 | 2006-10-18 | 株式会社東芝 | 半導体装置の製造方法 |
| EP1417718A1 (en) | 2001-08-10 | 2004-05-12 | Spinnaker Semiconductor, Inc. | Transistor having high dielectric constant gate insulating layer and source and drain forming schottky contact with substrate |
| US6974737B2 (en) | 2002-05-16 | 2005-12-13 | Spinnaker Semiconductor, Inc. | Schottky barrier CMOS fabrication method |
-
2004
- 2004-10-04 EP EP04794042A patent/EP1676305A1/en not_active Withdrawn
- 2004-10-04 RU RU2006114833/28A patent/RU2006114833A/ru not_active Application Discontinuation
- 2004-10-04 WO PCT/US2004/032539 patent/WO2005036631A1/en not_active Ceased
- 2004-10-04 JP JP2006534203A patent/JP2007507905A/ja active Pending
- 2004-10-04 CN CNA200480028742XA patent/CN1868045A/zh active Pending
- 2004-10-04 US US10/957,913 patent/US7291524B2/en not_active Expired - Fee Related
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