CN1868045A - 使用各向同性蚀刻工艺的肖特基势垒mosfet制造方法 - Google Patents

使用各向同性蚀刻工艺的肖特基势垒mosfet制造方法 Download PDF

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Publication number
CN1868045A
CN1868045A CNA200480028742XA CN200480028742A CN1868045A CN 1868045 A CN1868045 A CN 1868045A CN A200480028742X A CNA200480028742X A CN A200480028742XA CN 200480028742 A CN200480028742 A CN 200480028742A CN 1868045 A CN1868045 A CN 1868045A
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CN
China
Prior art keywords
semiconductor substrate
etch rate
schottky
vertical
gate electrode
Prior art date
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Pending
Application number
CNA200480028742XA
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English (en)
Chinese (zh)
Inventor
J·P·斯奈德
J·M·拉森
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Spinnaker Semiconductor Inc
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Spinnaker Semiconductor Inc
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Application filed by Spinnaker Semiconductor Inc filed Critical Spinnaker Semiconductor Inc
Publication of CN1868045A publication Critical patent/CN1868045A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/027—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs
    • H10D30/0277—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs forming conductor-insulator-semiconductor or Schottky barrier source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/021—Forming source or drain recesses by etching e.g. recessing by etching and then refilling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H10D64/647—Schottky drain or source electrodes for IGFETs

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  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CNA200480028742XA 2003-10-03 2004-10-04 使用各向同性蚀刻工艺的肖特基势垒mosfet制造方法 Pending CN1868045A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US50914203P 2003-10-03 2003-10-03
US60/509,142 2003-10-03

Publications (1)

Publication Number Publication Date
CN1868045A true CN1868045A (zh) 2006-11-22

Family

ID=34434946

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA200480028742XA Pending CN1868045A (zh) 2003-10-03 2004-10-04 使用各向同性蚀刻工艺的肖特基势垒mosfet制造方法

Country Status (6)

Country Link
US (1) US7291524B2 (enExample)
EP (1) EP1676305A1 (enExample)
JP (1) JP2007507905A (enExample)
CN (1) CN1868045A (enExample)
RU (1) RU2006114833A (enExample)
WO (1) WO2005036631A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103745929A (zh) * 2013-12-24 2014-04-23 上海新傲科技股份有限公司 肖特基势垒mosfet的制备方法
CN107192968A (zh) * 2016-03-15 2017-09-22 精工半导体有限公司 半导体装置及其制造方法

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US6303479B1 (en) * 1999-12-16 2001-10-16 Spinnaker Semiconductor, Inc. Method of manufacturing a short-channel FET with Schottky-barrier source and drain contacts
US7393733B2 (en) 2004-12-01 2008-07-01 Amberwave Systems Corporation Methods of forming hybrid fin field-effect transistor structures
KR100560432B1 (ko) * 2004-12-21 2006-03-13 한국전자통신연구원 Ｎ형 쇼트키 장벽 관통 트랜지스터 소자 및 제조 방법
US9153645B2 (en) 2005-05-17 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
US8324660B2 (en) 2005-05-17 2012-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
WO2006137497A1 (ja) * 2005-06-24 2006-12-28 Mitsubishi Gas Chemical Company, Inc. メタル材料用エッチング剤組成物およびそれを用いた半導体デバイスの製造方法
WO2007101120A1 (en) * 2006-02-23 2007-09-07 Acorn Technologies, Inc. Method for making semiconductor insulated-gate field-effect transistor having multilayer deposited metal source (s) and/or drain (s)
WO2007112066A2 (en) 2006-03-24 2007-10-04 Amberwave Systems Corporation Lattice-mismatched semiconductor structures and related methods for device fabrication
EP2062290B1 (en) 2006-09-07 2019-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Defect reduction using aspect ratio trapping
US7875958B2 (en) 2006-09-27 2011-01-25 Taiwan Semiconductor Manufacturing Company, Ltd. Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures
WO2008039495A1 (en) 2006-09-27 2008-04-03 Amberwave Systems Corporation Tri-gate field-effect transistors formed by aspect ratio trapping
WO2008051503A2 (en) 2006-10-19 2008-05-02 Amberwave Systems Corporation Light-emitter-based devices with lattice-mismatched semiconductor structures
US9508890B2 (en) 2007-04-09 2016-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. Photovoltaics on silicon
US7825328B2 (en) 2007-04-09 2010-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Nitride-based multi-junction solar cell modules and methods for making the same
US8237151B2 (en) 2009-01-09 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Diode-based devices and methods for making the same
US8304805B2 (en) 2009-01-09 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor diodes fabricated by aspect ratio trapping with coalesced films
US7553717B2 (en) * 2007-05-11 2009-06-30 Texas Instruments Incorporated Recess etch for epitaxial SiGe
US8329541B2 (en) 2007-06-15 2012-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. InP-based transistor fabrication
JP2010538495A (ja) 2007-09-07 2010-12-09 アンバーウェーブ・システムズ・コーポレーション 多接合太陽電池
US8183667B2 (en) 2008-06-03 2012-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial growth of crystalline material
US8274097B2 (en) 2008-07-01 2012-09-25 Taiwan Semiconductor Manufacturing Company, Ltd. Reduction of edge effects from aspect ratio trapping
US8981427B2 (en) 2008-07-15 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing of small composite semiconductor materials
CN102160145B (zh) 2008-09-19 2013-08-21 台湾积体电路制造股份有限公司 通过外延层过成长的元件形成
US20100072515A1 (en) 2008-09-19 2010-03-25 Amberwave Systems Corporation Fabrication and structures of crystalline material
US8253211B2 (en) 2008-09-24 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor sensor structures with reduced dislocation defect densities
CN102379046B (zh) 2009-04-02 2015-06-17 台湾积体电路制造股份有限公司 从晶体材料的非极性平面形成的器件及其制作方法
US8513765B2 (en) 2010-07-19 2013-08-20 International Business Machines Corporation Formation method and structure for a well-controlled metallic source/drain semiconductor device
US9691898B2 (en) * 2013-12-19 2017-06-27 Taiwan Semiconductor Manufacturing Co., Ltd. Germanium profile for channel strain
US10249542B2 (en) * 2017-01-12 2019-04-02 International Business Machines Corporation Self-aligned doping in source/drain regions for low contact resistance
RU2688861C1 (ru) * 2018-03-12 2019-05-22 Федеральное государственное бюджетное образовательное учреждение высшего образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ) Способ изготовления полупроводникового прибора

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JPS61237470A (ja) * 1985-04-15 1986-10-22 Hitachi Ltd 半導体装置
US5834793A (en) 1985-12-27 1998-11-10 Kabushiki Kaisha Toshiba Semiconductor devices
JP3761918B2 (ja) * 1994-09-13 2006-03-29 株式会社東芝 半導体装置の製造方法
US6784035B2 (en) 2002-01-23 2004-08-31 Spinnaker Semiconductor, Inc. Field effect transistor having source and/or drain forming Schottky or Schottky-like contact with strained semiconductor substrate
US6303479B1 (en) 1999-12-16 2001-10-16 Spinnaker Semiconductor, Inc. Method of manufacturing a short-channel FET with Schottky-barrier source and drain contacts
JP3833903B2 (ja) * 2000-07-11 2006-10-18 株式会社東芝 半導体装置の製造方法
EP1417718A1 (en) 2001-08-10 2004-05-12 Spinnaker Semiconductor, Inc. Transistor having high dielectric constant gate insulating layer and source and drain forming schottky contact with substrate
US6974737B2 (en) 2002-05-16 2005-12-13 Spinnaker Semiconductor, Inc. Schottky barrier CMOS fabrication method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103745929A (zh) * 2013-12-24 2014-04-23 上海新傲科技股份有限公司 肖特基势垒mosfet的制备方法
CN107192968A (zh) * 2016-03-15 2017-09-22 精工半导体有限公司 半导体装置及其制造方法

Also Published As

Publication number Publication date
US7291524B2 (en) 2007-11-06
WO2005036631A1 (en) 2005-04-21
JP2007507905A (ja) 2007-03-29
RU2006114833A (ru) 2007-11-10
EP1676305A1 (en) 2006-07-05
US20050118793A1 (en) 2005-06-02

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