RU2006114833A - Способ изготовления полевого транзистора моп-структуры с барьером шотки с использованием процесса изотропного травления - Google Patents
Способ изготовления полевого транзистора моп-структуры с барьером шотки с использованием процесса изотропного травления Download PDFInfo
- Publication number
- RU2006114833A RU2006114833A RU2006114833/28A RU2006114833A RU2006114833A RU 2006114833 A RU2006114833 A RU 2006114833A RU 2006114833/28 A RU2006114833/28 A RU 2006114833/28A RU 2006114833 A RU2006114833 A RU 2006114833A RU 2006114833 A RU2006114833 A RU 2006114833A
- Authority
- RU
- Russia
- Prior art keywords
- semiconductor substrate
- etching rate
- horizontal
- vertical
- barrier
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/027—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs
- H10D30/0277—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs forming conductor-insulator-semiconductor or Schottky barrier source or drain regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/01—Manufacture or treatment
- H10D62/021—Forming source or drain recesses by etching e.g. recessing by etching and then refilling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/251—Source or drain electrodes for field-effect devices
- H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
- H10D64/647—Schottky drain or source electrodes for IGFETs
Landscapes
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US50914203P | 2003-10-03 | 2003-10-03 | |
| US60/509,142 | 2003-10-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| RU2006114833A true RU2006114833A (ru) | 2007-11-10 |
Family
ID=34434946
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RU2006114833/28A RU2006114833A (ru) | 2003-10-03 | 2004-10-04 | Способ изготовления полевого транзистора моп-структуры с барьером шотки с использованием процесса изотропного травления |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7291524B2 (enExample) |
| EP (1) | EP1676305A1 (enExample) |
| JP (1) | JP2007507905A (enExample) |
| CN (1) | CN1868045A (enExample) |
| RU (1) | RU2006114833A (enExample) |
| WO (1) | WO2005036631A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2688861C1 (ru) * | 2018-03-12 | 2019-05-22 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ) | Способ изготовления полупроводникового прибора |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6303479B1 (en) * | 1999-12-16 | 2001-10-16 | Spinnaker Semiconductor, Inc. | Method of manufacturing a short-channel FET with Schottky-barrier source and drain contacts |
| US7393733B2 (en) | 2004-12-01 | 2008-07-01 | Amberwave Systems Corporation | Methods of forming hybrid fin field-effect transistor structures |
| KR100560432B1 (ko) * | 2004-12-21 | 2006-03-13 | 한국전자통신연구원 | Ｎ형 쇼트키 장벽 관통 트랜지스터 소자 및 제조 방법 |
| US9153645B2 (en) | 2005-05-17 | 2015-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication |
| US8324660B2 (en) | 2005-05-17 | 2012-12-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication |
| WO2006137497A1 (ja) * | 2005-06-24 | 2006-12-28 | Mitsubishi Gas Chemical Company, Inc. | メタル材料用エッチング剤組成物およびそれを用いた半導体デバイスの製造方法 |
| WO2007101120A1 (en) * | 2006-02-23 | 2007-09-07 | Acorn Technologies, Inc. | Method for making semiconductor insulated-gate field-effect transistor having multilayer deposited metal source (s) and/or drain (s) |
| WO2007112066A2 (en) | 2006-03-24 | 2007-10-04 | Amberwave Systems Corporation | Lattice-mismatched semiconductor structures and related methods for device fabrication |
| EP2062290B1 (en) | 2006-09-07 | 2019-08-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Defect reduction using aspect ratio trapping |
| US7875958B2 (en) | 2006-09-27 | 2011-01-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures |
| WO2008039495A1 (en) | 2006-09-27 | 2008-04-03 | Amberwave Systems Corporation | Tri-gate field-effect transistors formed by aspect ratio trapping |
| WO2008051503A2 (en) | 2006-10-19 | 2008-05-02 | Amberwave Systems Corporation | Light-emitter-based devices with lattice-mismatched semiconductor structures |
| US9508890B2 (en) | 2007-04-09 | 2016-11-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photovoltaics on silicon |
| US7825328B2 (en) | 2007-04-09 | 2010-11-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Nitride-based multi-junction solar cell modules and methods for making the same |
| US8237151B2 (en) | 2009-01-09 | 2012-08-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Diode-based devices and methods for making the same |
| US8304805B2 (en) | 2009-01-09 | 2012-11-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor diodes fabricated by aspect ratio trapping with coalesced films |
| US7553717B2 (en) * | 2007-05-11 | 2009-06-30 | Texas Instruments Incorporated | Recess etch for epitaxial SiGe |
| US8329541B2 (en) | 2007-06-15 | 2012-12-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | InP-based transistor fabrication |
| JP2010538495A (ja) | 2007-09-07 | 2010-12-09 | アンバーウェーブ・システムズ・コーポレーション | 多接合太陽電池 |
| US8183667B2 (en) | 2008-06-03 | 2012-05-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Epitaxial growth of crystalline material |
| US8274097B2 (en) | 2008-07-01 | 2012-09-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Reduction of edge effects from aspect ratio trapping |
| US8981427B2 (en) | 2008-07-15 | 2015-03-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Polishing of small composite semiconductor materials |
| CN102160145B (zh) | 2008-09-19 | 2013-08-21 | 台湾积体电路制造股份有限公司 | 通过外延层过成长的元件形成 |
| US20100072515A1 (en) | 2008-09-19 | 2010-03-25 | Amberwave Systems Corporation | Fabrication and structures of crystalline material |
| US8253211B2 (en) | 2008-09-24 | 2012-08-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor sensor structures with reduced dislocation defect densities |
| CN102379046B (zh) | 2009-04-02 | 2015-06-17 | 台湾积体电路制造股份有限公司 | 从晶体材料的非极性平面形成的器件及其制作方法 |
| US8513765B2 (en) | 2010-07-19 | 2013-08-20 | International Business Machines Corporation | Formation method and structure for a well-controlled metallic source/drain semiconductor device |
| US9691898B2 (en) * | 2013-12-19 | 2017-06-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Germanium profile for channel strain |
| CN103745929A (zh) * | 2013-12-24 | 2014-04-23 | 上海新傲科技股份有限公司 | 肖特基势垒mosfet的制备方法 |
| JP6697909B2 (ja) * | 2016-03-15 | 2020-05-27 | エイブリック株式会社 | 半導体装置とその製造方法 |
| US10249542B2 (en) * | 2017-01-12 | 2019-04-02 | International Business Machines Corporation | Self-aligned doping in source/drain regions for low contact resistance |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61237470A (ja) * | 1985-04-15 | 1986-10-22 | Hitachi Ltd | 半導体装置 |
| US5834793A (en) | 1985-12-27 | 1998-11-10 | Kabushiki Kaisha Toshiba | Semiconductor devices |
| JP3761918B2 (ja) * | 1994-09-13 | 2006-03-29 | 株式会社東芝 | 半導体装置の製造方法 |
| US6784035B2 (en) | 2002-01-23 | 2004-08-31 | Spinnaker Semiconductor, Inc. | Field effect transistor having source and/or drain forming Schottky or Schottky-like contact with strained semiconductor substrate |
| US6303479B1 (en) | 1999-12-16 | 2001-10-16 | Spinnaker Semiconductor, Inc. | Method of manufacturing a short-channel FET with Schottky-barrier source and drain contacts |
| JP3833903B2 (ja) * | 2000-07-11 | 2006-10-18 | 株式会社東芝 | 半導体装置の製造方法 |
| EP1417718A1 (en) | 2001-08-10 | 2004-05-12 | Spinnaker Semiconductor, Inc. | Transistor having high dielectric constant gate insulating layer and source and drain forming schottky contact with substrate |
| US6974737B2 (en) | 2002-05-16 | 2005-12-13 | Spinnaker Semiconductor, Inc. | Schottky barrier CMOS fabrication method |
-
2004
- 2004-10-04 EP EP04794042A patent/EP1676305A1/en not_active Withdrawn
- 2004-10-04 RU RU2006114833/28A patent/RU2006114833A/ru not_active Application Discontinuation
- 2004-10-04 WO PCT/US2004/032539 patent/WO2005036631A1/en not_active Ceased
- 2004-10-04 JP JP2006534203A patent/JP2007507905A/ja active Pending
- 2004-10-04 CN CNA200480028742XA patent/CN1868045A/zh active Pending
- 2004-10-04 US US10/957,913 patent/US7291524B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2688861C1 (ru) * | 2018-03-12 | 2019-05-22 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ) | Способ изготовления полупроводникового прибора |
Also Published As
| Publication number | Publication date |
|---|---|
| US7291524B2 (en) | 2007-11-06 |
| WO2005036631A1 (en) | 2005-04-21 |
| JP2007507905A (ja) | 2007-03-29 |
| EP1676305A1 (en) | 2006-07-05 |
| CN1868045A (zh) | 2006-11-22 |
| US20050118793A1 (en) | 2005-06-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FA92 | Acknowledgement of application withdrawn (lack of supplementary materials submitted) |
Effective date: 20090111 |