JP2007507905A - 等方性エッチングプロセスを使ったショットキーバリアmosfet製造方法 - Google Patents
等方性エッチングプロセスを使ったショットキーバリアmosfet製造方法 Download PDFInfo
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- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 1
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- 238000007740 vapor deposition Methods 0.000 claims 1
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- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
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- 238000001039 wet etching Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910004140 HfO Inorganic materials 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
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- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical class [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66643—Lateral single gate silicon transistors with source or drain regions formed by a Schottky barrier or a conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66636—Lateral single gate silicon transistors with source or drain recessed by etching or first recessed by etching and then refilled
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7839—Field effect transistors with field effect produced by an insulated gate with Schottky drain or source contact
Abstract
【解決手段】本発明の一実施形態における方法は、チャンネル領域に対するショットキーバリア接合位置のより良い制御を与えるために、メタルソースドレイン接触の形成に先行して等方性エッチングプロセスを利用する。このショットキーバリア10接合の配置の制御性からの改善により、更なる駆動電流を可能にし、デバイスの動作を最適化する。
【選択図】図6
Description
本願は、ここに参照によって完全な形で組み込まれた、2003年10月3日出願の米国特許仮出願番号60/509,142の利益及び優先権を主張するものである。
110 半導体基板
120 ソース電極
125 ドレイン電極
140 チャネル領域
150 絶縁体ゲート
210 シリコン基板
220 遮蔽酸化物
310 絶縁体ゲート
320 ゲート電極
Claims (25)
- 電流の流れを調節するためのデバイスを製造する方法であって、
半導体基板を与え、
前記半導体基板上にゲート電極を与え、
前記ゲート電極に隣接する領域の前記半導体基板を露出し、
部分的な等方性エッチングを使って前記露出した領域上の半導体基板をエッチングし、
前記半導体基板のエッチングされた領域に金属の薄膜を蒸着し、
前記金属を前記基板に反応させてショットキー又はショットキーの様なソース電極又はドレイン電極を形成することを含む方法。 - 請求項1記載の方法において、前記半導体基板は、シリコン、ひずみシリコン、シリコン・オン・インシュレーター、シリコンゲルマニウム、ガリウムヒ素、又は、リン化インジウム、を含む方法。
- 請求項1記載の方法において、前記エッチング動作は、縦方向のエッチング速度の約10分の1から10倍の横方向のエッチング速度を有するエッチングを使って実行される方法。
- 請求項1記載の方法において、
前記部分的な等方性エッチングは前記半導体基板の縦方向のエッチング速度と前記半導体基板の横方向のエッチング速度とを含み、
前記縦方向のエッチング速度は前記横方向のエッチング速度の略10倍である方法。 - 請求項1記載の方法において、
前記部分的な等方性エッチングは前記半導体基板の横方向のエッチング速度と前記半導体基板の縦方向のエッチング速度とを含み、
前記横方向のエッチング速度は前記縦横方向のエッチング速度の略10倍である方法。 - 請求項1記載の方法において、
前記部分的な等方性エッチングは前記半導体基板の横方向のエッチング速度と前記半導体基板の縦方向のエッチング速度とを含み、
前記横方向及び縦方向のエッチング速度は略同じである方法。 - 請求項1記載の方法において、
前記半導体基板上に薄い絶縁層を与え、
前記絶縁層上に導電性薄膜を蒸着し、
前記導電性膜にパターニング及びエッチングをしてゲート電極を形成し、
前記ゲート電極の一又はそれ以上の側壁に一又はそれ以上の薄い絶縁層を形成する
ことからなるステップによって前記ゲート電極が与えられる方法。 - 請求項1記載の方法において、前記ショットキー又はショットキーの様なソース及びドレイン電極を形成した後、前記デバイスから未反応の金属を取り除くことをさらに含む方法。
- 請求項1記載の方法において、前記反応ステップはアニーリングによって実行される方法。
- 請求項1記載の方法において、前記ソース電極及びドレイン電極は、白金シリサイド、パラジウムケイ素化合物、イリジウムケイ素化合物のうちのいずか一つ又はそれらの組み合わせである方法。
- 請求項1記載の方法において、前記ソース電極及びドレイン電極は希土類ケイ素化合物である方法。
- 請求項1記載の方法において、ショットキー又はショットキーの様な接触は、少なくとも前記ゲート電極の下のチャネル区域に近接した領域において形成される方法。
- 請求項1記載の方法において、ソース電極及びドレイン電極の少なくとも一つの全体の表面が、前記半導体基板とのショットキー又はショットキーの様な接触を形成する方法。
- 請求項1記載の方法において、
前記ゲート電極を与える動作の前に前記半導体基板の中に不純物が導入され、
前記ソース及びドレイン電極間のチャネル領域中の不純物は、ヒ素、リン、又は、アンチモンを含む方法。 - 請求項1記載の方法において、
前記ゲート電極を与える動作の前に前記半導体基板の中に不純物が導入され、
前記ソース及びドレイン電極間のチャネル領域中の不純物は、ボロン、インジウム、又は、ガリウムを含む方法。 - 請求項14記載の方法において、前記半導体基板は、縦方向においては有意に変化して横方向には略一定の、チャネル不純物濃度を有する方法。
- 請求項14記載の方法において、前記半導体基板は、縦方向及び横方向において有意に変化するチャネル不純物濃度を有する方法。
- 請求項15記載の方法において、前記半導体基板は、縦方向においては有意に変化して横方向には略一定の、チャネル不純物濃度を有する方法。
- 請求項15記載の方法において、前記半導体基板は、縦方向及び横方向において有意に変化するチャネル不純物濃度を有する方法。
- 電流の流れを調節するためのデバイスを製造する方法であって、
ゲート電極に隣接する領域における半導体基板を露出し、
部分的な等方性エッチングを使って前記露出した領域上の半導体基板をエッチングし、
前記半導体基板に金属薄膜を蒸着し、アニーリングし、ショットキー又はショットキーの様なソース電極又はドレイン電極を形成する方法。 - 請求項20記載の方法において、
前記部分的な等方性エッチングは前記半導体基板の縦方向のエッチング速度と前記半導体基板の横方向のエッチング速度とを含み、
前記縦方向のエッチング速度は前記横方向のエッチング速度の略10倍である方法。 - 請求項20記載の方法において、
前記部分的な等方性エッチングは前記半導体基板の横方向のエッチング速度と前記半導体基板の縦方向のエッチング速度とを含み、
前記横方向のエッチング速度は前記縦方向のエッチング速度の略10倍である方法。 - 請求項20記載の方法において、
前記部分的な等方性エッチングは前記半導体基板の横方向のエッチング速度と前記半導体基板の縦方向のエッチング速度とを含み、
前記横方向及び縦方向のエッチング速度は略同じである方法。 - 請求項20記載の方法において、前記エッチング動作は、縦方向のエッチング速度の約10分の1から10倍の横方向のエッチング速度を有するエッチングを使って実行される方法。
- 請求項20記載の方法において、前記半導体基板は、前記蒸着ステップの間加熱されて前記半導体基板中に金属原子が拡散することを促進する方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US50914203P | 2003-10-03 | 2003-10-03 | |
PCT/US2004/032539 WO2005036631A1 (en) | 2003-10-03 | 2004-10-04 | Schottky-barrier mosfet manufacturing method using isotropic etch process |
Publications (2)
Publication Number | Publication Date |
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JP2007507905A true JP2007507905A (ja) | 2007-03-29 |
JP2007507905A5 JP2007507905A5 (ja) | 2007-11-22 |
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JP2006534203A Pending JP2007507905A (ja) | 2003-10-03 | 2004-10-04 | 等方性エッチングプロセスを使ったショットキーバリアmosfet製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7291524B2 (ja) |
EP (1) | EP1676305A1 (ja) |
JP (1) | JP2007507905A (ja) |
CN (1) | CN1868045A (ja) |
RU (1) | RU2006114833A (ja) |
WO (1) | WO2005036631A1 (ja) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6303479B1 (en) * | 1999-12-16 | 2001-10-16 | Spinnaker Semiconductor, Inc. | Method of manufacturing a short-channel FET with Schottky-barrier source and drain contacts |
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US7799592B2 (en) | 2006-09-27 | 2010-09-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Tri-gate field-effect transistors formed by aspect ratio trapping |
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US9508890B2 (en) | 2007-04-09 | 2016-11-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photovoltaics on silicon |
US7553717B2 (en) * | 2007-05-11 | 2009-06-30 | Texas Instruments Incorporated | Recess etch for epitaxial SiGe |
US8329541B2 (en) | 2007-06-15 | 2012-12-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | InP-based transistor fabrication |
DE112008002387B4 (de) | 2007-09-07 | 2022-04-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Struktur einer Mehrfachübergangs-Solarzelle, Verfahren zur Bildung einer photonischenVorrichtung, Photovoltaische Mehrfachübergangs-Zelle und Photovoltaische Mehrfachübergangs-Zellenvorrichtung, |
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US8981427B2 (en) | 2008-07-15 | 2015-03-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Polishing of small composite semiconductor materials |
US20100072515A1 (en) | 2008-09-19 | 2010-03-25 | Amberwave Systems Corporation | Fabrication and structures of crystalline material |
WO2010033813A2 (en) | 2008-09-19 | 2010-03-25 | Amberwave System Corporation | Formation of devices by epitaxial layer overgrowth |
US8253211B2 (en) | 2008-09-24 | 2012-08-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor sensor structures with reduced dislocation defect densities |
CN102379046B (zh) | 2009-04-02 | 2015-06-17 | 台湾积体电路制造股份有限公司 | 从晶体材料的非极性平面形成的器件及其制作方法 |
US8513765B2 (en) | 2010-07-19 | 2013-08-20 | International Business Machines Corporation | Formation method and structure for a well-controlled metallic source/drain semiconductor device |
US9691898B2 (en) * | 2013-12-19 | 2017-06-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Germanium profile for channel strain |
CN103745929A (zh) * | 2013-12-24 | 2014-04-23 | 上海新傲科技股份有限公司 | 肖特基势垒mosfet的制备方法 |
JP6697909B2 (ja) * | 2016-03-15 | 2020-05-27 | エイブリック株式会社 | 半導体装置とその製造方法 |
US10249542B2 (en) * | 2017-01-12 | 2019-04-02 | International Business Machines Corporation | Self-aligned doping in source/drain regions for low contact resistance |
RU2688861C1 (ru) * | 2018-03-12 | 2019-05-22 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ) | Способ изготовления полупроводникового прибора |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61237470A (ja) * | 1985-04-15 | 1986-10-22 | Hitachi Ltd | 半導体装置 |
JP2003517210A (ja) * | 1999-12-16 | 2003-05-20 | スピネカ セミコンダクター, インコーポレイテッド | Mosfetデバイスのシステムおよび方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5834793A (en) * | 1985-12-27 | 1998-11-10 | Kabushiki Kaisha Toshiba | Semiconductor devices |
JP3761918B2 (ja) * | 1994-09-13 | 2006-03-29 | 株式会社東芝 | 半導体装置の製造方法 |
US6949787B2 (en) | 2001-08-10 | 2005-09-27 | Spinnaker Semiconductor, Inc. | Transistor having high dielectric constant gate insulating layer and source and drain forming Schottky contact with substrate |
JP3833903B2 (ja) * | 2000-07-11 | 2006-10-18 | 株式会社東芝 | 半導体装置の製造方法 |
EP1468440A2 (en) | 2002-01-23 | 2004-10-20 | Spinnaker Semiconductor, Inc. | Field effect transistor having source and/or drain forming schottky or schottky−like contact with strained semiconductor substrate |
US6974737B2 (en) | 2002-05-16 | 2005-12-13 | Spinnaker Semiconductor, Inc. | Schottky barrier CMOS fabrication method |
-
2004
- 2004-10-04 JP JP2006534203A patent/JP2007507905A/ja active Pending
- 2004-10-04 CN CNA200480028742XA patent/CN1868045A/zh active Pending
- 2004-10-04 RU RU2006114833/28A patent/RU2006114833A/ru not_active Application Discontinuation
- 2004-10-04 WO PCT/US2004/032539 patent/WO2005036631A1/en active Application Filing
- 2004-10-04 US US10/957,913 patent/US7291524B2/en not_active Expired - Fee Related
- 2004-10-04 EP EP04794042A patent/EP1676305A1/en not_active Withdrawn
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61237470A (ja) * | 1985-04-15 | 1986-10-22 | Hitachi Ltd | 半導体装置 |
JP2003517210A (ja) * | 1999-12-16 | 2003-05-20 | スピネカ セミコンダクター, インコーポレイテッド | Mosfetデバイスのシステムおよび方法 |
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CN1868045A (zh) | 2006-11-22 |
WO2005036631A1 (en) | 2005-04-21 |
US20050118793A1 (en) | 2005-06-02 |
RU2006114833A (ru) | 2007-11-10 |
US7291524B2 (en) | 2007-11-06 |
EP1676305A1 (en) | 2006-07-05 |
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