JP2007507905A - 等方性エッチングプロセスを使ったショットキーバリアｍｏｓｆｅｔ製造方法 - Google Patents

等方性エッチングプロセスを使ったショットキーバリアｍｏｓｆｅｔ製造方法 Download PDF

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JP2007507905A
JP2007507905A JP2006534203A JP2006534203A JP2007507905A JP 2007507905 A JP2007507905 A JP 2007507905A JP 2006534203 A JP2006534203 A JP 2006534203A JP 2006534203 A JP2006534203 A JP 2006534203A JP 2007507905 A JP2007507905 A JP 2007507905A
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semiconductor substrate
schottky
etching
etching rate
lateral
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JP2007507905A5 (enExample
Inventor
ジョン ピー スナイダー
ジョン エム ラーソン
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スピンネイカー セミコンダクター インコーポレイテッド
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Publication of JP2007507905A publication Critical patent/JP2007507905A/ja
Publication of JP2007507905A5 publication Critical patent/JP2007507905A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/027—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs
    • H10D30/0277—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs forming conductor-insulator-semiconductor or Schottky barrier source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/021—Forming source or drain recesses by etching e.g. recessing by etching and then refilling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H10D64/647—Schottky drain or source electrodes for IGFETs

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  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2006534203A 2003-10-03 2004-10-04 等方性エッチングプロセスを使ったショットキーバリアｍｏｓｆｅｔ製造方法 Pending JP2007507905A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US50914203P 2003-10-03 2003-10-03
PCT/US2004/032539 WO2005036631A1 (en) 2003-10-03 2004-10-04 Schottky-barrier mosfet manufacturing method using isotropic etch process

Publications (2)

Publication Number Publication Date
JP2007507905A true JP2007507905A (ja) 2007-03-29
JP2007507905A5 JP2007507905A5 (enExample) 2007-11-22

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ID=34434946

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006534203A Pending JP2007507905A (ja) 2003-10-03 2004-10-04 等方性エッチングプロセスを使ったショットキーバリアｍｏｓｆｅｔ製造方法

Country Status (6)

Country Link
US (1) US7291524B2 (enExample)
EP (1) EP1676305A1 (enExample)
JP (1) JP2007507905A (enExample)
CN (1) CN1868045A (enExample)
RU (1) RU2006114833A (enExample)
WO (1) WO2005036631A1 (enExample)

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US6303479B1 (en) * 1999-12-16 2001-10-16 Spinnaker Semiconductor, Inc. Method of manufacturing a short-channel FET with Schottky-barrier source and drain contacts
US7393733B2 (en) 2004-12-01 2008-07-01 Amberwave Systems Corporation Methods of forming hybrid fin field-effect transistor structures
KR100560432B1 (ko) * 2004-12-21 2006-03-13 한국전자통신연구원 Ｎ형 쇼트키 장벽 관통 트랜지스터 소자 및 제조 방법
US9153645B2 (en) 2005-05-17 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
US8324660B2 (en) 2005-05-17 2012-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
WO2006137497A1 (ja) * 2005-06-24 2006-12-28 Mitsubishi Gas Chemical Company, Inc. メタル材料用エッチング剤組成物およびそれを用いた半導体デバイスの製造方法
WO2007101120A1 (en) * 2006-02-23 2007-09-07 Acorn Technologies, Inc. Method for making semiconductor insulated-gate field-effect transistor having multilayer deposited metal source (s) and/or drain (s)
WO2007112066A2 (en) 2006-03-24 2007-10-04 Amberwave Systems Corporation Lattice-mismatched semiconductor structures and related methods for device fabrication
EP2062290B1 (en) 2006-09-07 2019-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Defect reduction using aspect ratio trapping
US7875958B2 (en) 2006-09-27 2011-01-25 Taiwan Semiconductor Manufacturing Company, Ltd. Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures
WO2008039495A1 (en) 2006-09-27 2008-04-03 Amberwave Systems Corporation Tri-gate field-effect transistors formed by aspect ratio trapping
WO2008051503A2 (en) 2006-10-19 2008-05-02 Amberwave Systems Corporation Light-emitter-based devices with lattice-mismatched semiconductor structures
US9508890B2 (en) 2007-04-09 2016-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. Photovoltaics on silicon
US7825328B2 (en) 2007-04-09 2010-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Nitride-based multi-junction solar cell modules and methods for making the same
US8237151B2 (en) 2009-01-09 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Diode-based devices and methods for making the same
US8304805B2 (en) 2009-01-09 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor diodes fabricated by aspect ratio trapping with coalesced films
US7553717B2 (en) * 2007-05-11 2009-06-30 Texas Instruments Incorporated Recess etch for epitaxial SiGe
US8329541B2 (en) 2007-06-15 2012-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. InP-based transistor fabrication
JP2010538495A (ja) 2007-09-07 2010-12-09 アンバーウェーブ・システムズ・コーポレーション 多接合太陽電池
US8183667B2 (en) 2008-06-03 2012-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial growth of crystalline material
US8274097B2 (en) 2008-07-01 2012-09-25 Taiwan Semiconductor Manufacturing Company, Ltd. Reduction of edge effects from aspect ratio trapping
US8981427B2 (en) 2008-07-15 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing of small composite semiconductor materials
CN102160145B (zh) 2008-09-19 2013-08-21 台湾积体电路制造股份有限公司 通过外延层过成长的元件形成
US20100072515A1 (en) 2008-09-19 2010-03-25 Amberwave Systems Corporation Fabrication and structures of crystalline material
US8253211B2 (en) 2008-09-24 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor sensor structures with reduced dislocation defect densities
CN102379046B (zh) 2009-04-02 2015-06-17 台湾积体电路制造股份有限公司 从晶体材料的非极性平面形成的器件及其制作方法
US8513765B2 (en) 2010-07-19 2013-08-20 International Business Machines Corporation Formation method and structure for a well-controlled metallic source/drain semiconductor device
US9691898B2 (en) * 2013-12-19 2017-06-27 Taiwan Semiconductor Manufacturing Co., Ltd. Germanium profile for channel strain
CN103745929A (zh) * 2013-12-24 2014-04-23 上海新傲科技股份有限公司 肖特基势垒mosfet的制备方法
JP6697909B2 (ja) * 2016-03-15 2020-05-27 エイブリック株式会社 半導体装置とその製造方法
US10249542B2 (en) * 2017-01-12 2019-04-02 International Business Machines Corporation Self-aligned doping in source/drain regions for low contact resistance
RU2688861C1 (ru) * 2018-03-12 2019-05-22 Федеральное государственное бюджетное образовательное учреждение высшего образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ) Способ изготовления полупроводникового прибора

Citations (2)

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JPS61237470A (ja) * 1985-04-15 1986-10-22 Hitachi Ltd 半導体装置
JP2003517210A (ja) * 1999-12-16 2003-05-20 スピネカ セミコンダクター， インコーポレイテッド Ｍｏｓｆｅｔデバイスのシステムおよび方法

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US5834793A (en) 1985-12-27 1998-11-10 Kabushiki Kaisha Toshiba Semiconductor devices
JP3761918B2 (ja) * 1994-09-13 2006-03-29 株式会社東芝 半導体装置の製造方法
US6784035B2 (en) 2002-01-23 2004-08-31 Spinnaker Semiconductor, Inc. Field effect transistor having source and/or drain forming Schottky or Schottky-like contact with strained semiconductor substrate
JP3833903B2 (ja) * 2000-07-11 2006-10-18 株式会社東芝 半導体装置の製造方法
EP1417718A1 (en) 2001-08-10 2004-05-12 Spinnaker Semiconductor, Inc. Transistor having high dielectric constant gate insulating layer and source and drain forming schottky contact with substrate
US6974737B2 (en) 2002-05-16 2005-12-13 Spinnaker Semiconductor, Inc. Schottky barrier CMOS fabrication method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61237470A (ja) * 1985-04-15 1986-10-22 Hitachi Ltd 半導体装置
JP2003517210A (ja) * 1999-12-16 2003-05-20 スピネカ セミコンダクター， インコーポレイテッド Ｍｏｓｆｅｔデバイスのシステムおよび方法

Also Published As

Publication number Publication date
US7291524B2 (en) 2007-11-06
WO2005036631A1 (en) 2005-04-21
RU2006114833A (ru) 2007-11-10
EP1676305A1 (en) 2006-07-05
CN1868045A (zh) 2006-11-22
US20050118793A1 (en) 2005-06-02

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