JP2007505502A5 - - Google Patents
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- Publication number
- JP2007505502A5 JP2007505502A5 JP2006526273A JP2006526273A JP2007505502A5 JP 2007505502 A5 JP2007505502 A5 JP 2007505502A5 JP 2006526273 A JP2006526273 A JP 2006526273A JP 2006526273 A JP2006526273 A JP 2006526273A JP 2007505502 A5 JP2007505502 A5 JP 2007505502A5
- Authority
- JP
- Japan
- Prior art keywords
- annealing
- region
- substrate
- type dopant
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000000034 method Methods 0.000 claims 31
- 238000000137 annealing Methods 0.000 claims 16
- 239000000758 substrate Substances 0.000 claims 11
- 239000000463 material Substances 0.000 claims 10
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 9
- 239000002019 doping agent Substances 0.000 claims 9
- 239000012212 insulator Substances 0.000 claims 9
- 238000002048 anodisation reaction Methods 0.000 claims 4
- 239000011261 inert gas Substances 0.000 claims 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 4
- 230000001590 oxidative effect Effects 0.000 claims 4
- 229910052760 oxygen Inorganic materials 0.000 claims 4
- 238000004151 rapid thermal annealing Methods 0.000 claims 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 3
- 238000010438 heat treatment Methods 0.000 claims 3
- 239000001301 oxygen Substances 0.000 claims 3
- 229910052796 boron Inorganic materials 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims 1
- 230000004913 activation Effects 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/662,028 | 2003-09-12 | ||
| US10/662,028 US7125458B2 (en) | 2003-09-12 | 2003-09-12 | Formation of a silicon germanium-on-insulator structure by oxidation of a buried porous silicon layer |
| PCT/US2004/029378 WO2005031810A2 (en) | 2003-09-12 | 2004-09-10 | Formation of a silicon germanium-on-insulator structure by oxidation of a buried porous silicon layer |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007505502A JP2007505502A (ja) | 2007-03-08 |
| JP2007505502A5 true JP2007505502A5 (enExample) | 2007-10-25 |
| JP4856544B2 JP4856544B2 (ja) | 2012-01-18 |
Family
ID=34274005
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006526273A Expired - Fee Related JP4856544B2 (ja) | 2003-09-12 | 2004-09-10 | 埋込多孔質シリコン層の酸化によるシリコン・ゲルマニウムオンインシュレータ構造の形成 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US7125458B2 (enExample) |
| EP (1) | EP1665340B1 (enExample) |
| JP (1) | JP4856544B2 (enExample) |
| KR (1) | KR100856988B1 (enExample) |
| CN (1) | CN100429761C (enExample) |
| AT (1) | ATE368939T1 (enExample) |
| DE (1) | DE602004007940T2 (enExample) |
| TW (1) | TWI330388B (enExample) |
| WO (1) | WO2005031810A2 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7566482B2 (en) * | 2003-09-30 | 2009-07-28 | International Business Machines Corporation | SOI by oxidation of porous silicon |
| US7172930B2 (en) * | 2004-07-02 | 2007-02-06 | International Business Machines Corporation | Strained silicon-on-insulator by anodization of a buried p+ silicon germanium layer |
| US7767541B2 (en) * | 2005-10-26 | 2010-08-03 | International Business Machines Corporation | Methods for forming germanium-on-insulator semiconductor structures using a porous layer and semiconductor structures formed by these methods |
| US7833884B2 (en) * | 2007-11-02 | 2010-11-16 | International Business Machines Corporation | Strained semiconductor-on-insulator by Si:C combined with porous process |
| US7772096B2 (en) * | 2008-07-10 | 2010-08-10 | International Machines Corporation | Formation of SOI by oxidation of silicon with engineered porosity gradient |
| FR2935194B1 (fr) * | 2008-08-22 | 2010-10-08 | Commissariat Energie Atomique | Procede de realisation de structures geoi localisees, obtenues par enrichissement en germanium |
| US8618554B2 (en) * | 2010-11-08 | 2013-12-31 | International Business Machines Corporation | Method to reduce ground-plane poisoning of extremely-thin SOI (ETSOI) layer with thin buried oxide |
| EP2761636A4 (en) | 2011-09-30 | 2015-12-02 | Intel Corp | METHOD FOR INCREASING THE ENERGY DENSITY AND THE EFFICIENT OUTPUT POWER OF AN ENERGY STORAGE DEVICE |
| US8518807B1 (en) * | 2012-06-22 | 2013-08-27 | International Business Machines Corporation | Radiation hardened SOI structure and method of making same |
| US9087716B2 (en) * | 2013-07-15 | 2015-07-21 | Globalfoundries Inc. | Channel semiconductor alloy layer growth adjusted by impurity ion implantation |
| US9343303B2 (en) | 2014-03-20 | 2016-05-17 | Samsung Electronics Co., Ltd. | Methods of forming low-defect strain-relaxed layers on lattice-mismatched substrates and related semiconductor structures and devices |
| US10032870B2 (en) | 2015-03-12 | 2018-07-24 | Globalfoundries Inc. | Low defect III-V semiconductor template on porous silicon |
| US9899274B2 (en) | 2015-03-16 | 2018-02-20 | International Business Machines Corporation | Low-cost SOI FinFET technology |
| US10833175B2 (en) * | 2015-06-04 | 2020-11-10 | International Business Machines Corporation | Formation of dislocation-free SiGe finFET using porous silicon |
| US20190131454A1 (en) * | 2017-11-01 | 2019-05-02 | Qualcomm Incorporated | Semiconductor device with strained silicon layers on porous silicon |
| CN112908849A (zh) * | 2021-01-28 | 2021-06-04 | 上海华力集成电路制造有限公司 | 一种形成SiGe沟道的热处理方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4104090A (en) | 1977-02-24 | 1978-08-01 | International Business Machines Corporation | Total dielectric isolation utilizing a combination of reactive ion etching, anodic etching, and thermal oxidation |
| JPS5831730B2 (ja) * | 1979-10-15 | 1983-07-08 | 松下電器産業株式会社 | 半導体装置の製造方法 |
| JPS592185B2 (ja) * | 1980-02-04 | 1984-01-17 | 日本電信電話株式会社 | 半導体基体内への絶縁領域の形成法 |
| KR960002765B1 (ko) | 1992-12-22 | 1996-02-26 | 금성일렉트론주식회사 | 절연체 위에 단결정 반도체 제조방법 |
| US6376859B1 (en) * | 1998-07-29 | 2002-04-23 | Texas Instruments Incorporated | Variable porosity porous silicon isolation |
| US5950094A (en) * | 1999-02-18 | 1999-09-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for fabricating fully dielectric isolated silicon (FDIS) |
| JP4212228B2 (ja) * | 1999-09-09 | 2009-01-21 | 株式会社東芝 | 半導体装置の製造方法 |
| JP2002305293A (ja) * | 2001-04-06 | 2002-10-18 | Canon Inc | 半導体部材の製造方法及び半導体装置の製造方法 |
| US6812116B2 (en) * | 2002-12-13 | 2004-11-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of fabricating a wafer with strained channel layers for increased electron and hole mobility for improving device performance |
-
2003
- 2003-09-12 US US10/662,028 patent/US7125458B2/en not_active Expired - Fee Related
-
2004
- 2004-09-01 TW TW093126414A patent/TWI330388B/zh not_active IP Right Cessation
- 2004-09-10 JP JP2006526273A patent/JP4856544B2/ja not_active Expired - Fee Related
- 2004-09-10 KR KR1020067003316A patent/KR100856988B1/ko not_active Expired - Fee Related
- 2004-09-10 WO PCT/US2004/029378 patent/WO2005031810A2/en not_active Ceased
- 2004-09-10 EP EP04809708A patent/EP1665340B1/en not_active Expired - Lifetime
- 2004-09-10 AT AT04809708T patent/ATE368939T1/de not_active IP Right Cessation
- 2004-09-10 CN CNB2004800263800A patent/CN100429761C/zh not_active Expired - Fee Related
- 2004-09-10 DE DE602004007940T patent/DE602004007940T2/de not_active Expired - Lifetime
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