JP2007502539A5 - - Google Patents

Download PDF

Info

Publication number
JP2007502539A5
JP2007502539A5 JP2006523208A JP2006523208A JP2007502539A5 JP 2007502539 A5 JP2007502539 A5 JP 2007502539A5 JP 2006523208 A JP2006523208 A JP 2006523208A JP 2006523208 A JP2006523208 A JP 2006523208A JP 2007502539 A5 JP2007502539 A5 JP 2007502539A5
Authority
JP
Japan
Prior art keywords
laser beam
wafer
exposure pattern
immersion medium
immersion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006523208A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007502539A (ja
Filing date
Publication date
Priority claimed from US10/638,927 external-priority patent/US7061578B2/en
Application filed filed Critical
Publication of JP2007502539A publication Critical patent/JP2007502539A/ja
Publication of JP2007502539A5 publication Critical patent/JP2007502539A5/ja
Pending legal-status Critical Current

Links

JP2006523208A 2003-08-11 2004-07-23 浸漬リソグラフィシステムの監視・制御方法及び装置 Pending JP2007502539A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/638,927 US7061578B2 (en) 2003-08-11 2003-08-11 Method and apparatus for monitoring and controlling imaging in immersion lithography systems
PCT/US2004/023875 WO2005017625A2 (en) 2003-08-11 2004-07-23 Method and apparatus for monitoring and controlling imaging in immersion lithography systems

Publications (2)

Publication Number Publication Date
JP2007502539A JP2007502539A (ja) 2007-02-08
JP2007502539A5 true JP2007502539A5 (https=) 2009-06-18

Family

ID=34135772

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006523208A Pending JP2007502539A (ja) 2003-08-11 2004-07-23 浸漬リソグラフィシステムの監視・制御方法及び装置

Country Status (8)

Country Link
US (1) US7061578B2 (https=)
EP (1) EP1654593B1 (https=)
JP (1) JP2007502539A (https=)
KR (1) KR101152366B1 (https=)
CN (1) CN1826559A (https=)
DE (1) DE602004027261D1 (https=)
TW (1) TWI359470B (https=)
WO (1) WO2005017625A2 (https=)

Families Citing this family (129)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7372541B2 (en) * 2002-11-12 2008-05-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9482966B2 (en) 2002-11-12 2016-11-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10503084B2 (en) 2002-11-12 2019-12-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
SG121819A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
SG135052A1 (en) 2002-11-12 2007-09-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
SG157962A1 (en) * 2002-12-10 2010-01-29 Nikon Corp Exposure apparatus and method for producing device
WO2004053952A1 (ja) * 2002-12-10 2004-06-24 Nikon Corporation 露光装置及びデバイス製造方法
US7948604B2 (en) * 2002-12-10 2011-05-24 Nikon Corporation Exposure apparatus and method for producing device
KR101101737B1 (ko) * 2002-12-10 2012-01-05 가부시키가이샤 니콘 노광장치 및 노광방법, 디바이스 제조방법
EP1571697A4 (en) * 2002-12-10 2007-07-04 Nikon Corp EXPOSURE SYSTEM AND COMPONENT MANUFACTURING METHOD
JP4352874B2 (ja) * 2002-12-10 2009-10-28 株式会社ニコン 露光装置及びデバイス製造方法
US7242455B2 (en) * 2002-12-10 2007-07-10 Nikon Corporation Exposure apparatus and method for producing device
ATE365962T1 (de) * 2002-12-19 2007-07-15 Koninkl Philips Electronics Nv Verfahren und anordnung zum bestrahlen einer schicht mittels eines lichtpunkts
DE10261775A1 (de) 2002-12-20 2004-07-01 Carl Zeiss Smt Ag Vorrichtung zur optischen Vermessung eines Abbildungssystems
KR101643112B1 (ko) * 2003-02-26 2016-07-26 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
KR101345474B1 (ko) 2003-03-25 2013-12-27 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
JP4902201B2 (ja) * 2003-04-07 2012-03-21 株式会社ニコン 露光装置、露光方法及びデバイス製造方法
KR20110104084A (ko) * 2003-04-09 2011-09-21 가부시키가이샤 니콘 액침 리소그래피 유체 제어 시스템
EP3352010A1 (en) * 2003-04-10 2018-07-25 Nikon Corporation Run-off path to collect liquid for an immersion lithography apparatus
JP4656057B2 (ja) * 2003-04-10 2011-03-23 株式会社ニコン 液浸リソグラフィ装置用電気浸透素子
SG141426A1 (en) * 2003-04-10 2008-04-28 Nikon Corp Environmental system including vacuum scavange for an immersion lithography apparatus
KR101431938B1 (ko) 2003-04-10 2014-08-19 가부시키가이샤 니콘 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템
SG139733A1 (en) * 2003-04-11 2008-02-29 Nikon Corp Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly
JP4582089B2 (ja) * 2003-04-11 2010-11-17 株式会社ニコン 液浸リソグラフィ用の液体噴射回収システム
KR101289959B1 (ko) * 2003-04-11 2013-07-26 가부시키가이샤 니콘 액침 리소그래피에 의한 광학기기의 세정방법
KR20050122269A (ko) * 2003-04-17 2005-12-28 가부시키가이샤 니콘 액침 리소그래피를 이용하기 위한 오토포커스 소자의광학적 배열
JP4025683B2 (ja) * 2003-05-09 2007-12-26 松下電器産業株式会社 パターン形成方法及び露光装置
TWI295414B (en) * 2003-05-13 2008-04-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
WO2004102646A1 (ja) * 2003-05-15 2004-11-25 Nikon Corporation 露光装置及びデバイス製造方法
TW201515064A (zh) 2003-05-23 2015-04-16 尼康股份有限公司 曝光方法及曝光裝置以及元件製造方法
TWI474380B (zh) * 2003-05-23 2015-02-21 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
WO2004107417A1 (ja) 2003-05-28 2004-12-09 Nikon Corporation 露光方法及び露光装置、並びにデバイス製造方法
TWI442694B (zh) * 2003-05-30 2014-06-21 Ａｓｍｌ荷蘭公司 微影裝置及元件製造方法
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1486827B1 (en) * 2003-06-11 2011-11-02 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7317504B2 (en) * 2004-04-08 2008-01-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP3104396B1 (en) 2003-06-13 2018-03-21 Nikon Corporation Exposure method, substrate stage, exposure apparatus, and device manufacturing method
KR101476087B1 (ko) 2003-06-19 2014-12-23 가부시키가이샤 니콘 노광 장치 및 디바이스 제조방법
US6867844B2 (en) 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
DE60308161T2 (de) 2003-06-27 2007-08-09 Asml Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung eines Artikels
US6809794B1 (en) * 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
WO2005006026A2 (en) * 2003-07-01 2005-01-20 Nikon Corporation Using isotopically specified fluids as optical elements
EP2843472B1 (en) * 2003-07-08 2016-12-07 Nikon Corporation Wafer table for immersion lithography
EP2264531B1 (en) 2003-07-09 2013-01-16 Nikon Corporation Exposure apparatus and device manufacturing method
EP1643543B1 (en) 2003-07-09 2010-11-24 Nikon Corporation Exposure apparatus and method for manufacturing device
WO2005006418A1 (ja) * 2003-07-09 2005-01-20 Nikon Corporation 露光装置及びデバイス製造方法
JP4524669B2 (ja) * 2003-07-25 2010-08-18 株式会社ニコン 投影光学系の検査方法および検査装置
US7326522B2 (en) 2004-02-11 2008-02-05 Asml Netherlands B.V. Device manufacturing method and a substrate
US7175968B2 (en) * 2003-07-28 2007-02-13 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a substrate
EP1503244A1 (en) 2003-07-28 2005-02-02 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
KR20190002749A (ko) 2003-07-28 2019-01-08 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의 제어 방법
US7779781B2 (en) 2003-07-31 2010-08-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7700267B2 (en) * 2003-08-11 2010-04-20 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion fluid for immersion lithography, and method of performing immersion lithography
US7579135B2 (en) * 2003-08-11 2009-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography apparatus for manufacture of integrated circuits
KR101419192B1 (ko) * 2003-08-29 2014-07-15 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
EP2261740B1 (en) 2003-08-29 2014-07-09 ASML Netherlands BV Lithographic apparatus
TWI263859B (en) 2003-08-29 2006-10-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7014966B2 (en) * 2003-09-02 2006-03-21 Advanced Micro Devices, Inc. Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems
EP1660925B1 (en) 2003-09-03 2015-04-29 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
JP4444920B2 (ja) * 2003-09-19 2010-03-31 株式会社ニコン 露光装置及びデバイス製造方法
KR101498437B1 (ko) * 2003-09-29 2015-03-03 가부시키가이샤 니콘 노광장치, 노광방법 및 디바이스 제조방법
EP1672681B8 (en) 2003-10-08 2011-09-21 Miyagi Nikon Precision Co., Ltd. Exposure apparatus, substrate carrying method, exposure method, and method for producing device
JP2005136364A (ja) * 2003-10-08 2005-05-26 Zao Nikon Co Ltd 基板搬送装置、露光装置、並びにデバイス製造方法
KR20060126949A (ko) 2003-10-08 2006-12-11 가부시키가이샤 니콘 기판 반송 장치와 기판 반송 방법, 노광 장치와 노광 방법,및 디바이스 제조 방법
TW200514138A (en) 2003-10-09 2005-04-16 Nippon Kogaku Kk Exposure equipment and exposure method, manufacture method of component
US7352433B2 (en) 2003-10-28 2008-04-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7411653B2 (en) * 2003-10-28 2008-08-12 Asml Netherlands B.V. Lithographic apparatus
EP1531362A3 (en) * 2003-11-13 2007-07-25 Matsushita Electric Industrial Co., Ltd. Semiconductor manufacturing apparatus and pattern formation method
US7528929B2 (en) * 2003-11-14 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP3370115A1 (en) * 2003-12-03 2018-09-05 Nikon Corporation Exposure apparatus, exposure method and method for producing a device
KR101281397B1 (ko) 2003-12-15 2013-07-02 가부시키가이샤 니콘 스테이지 장치, 노광 장치, 및 노광 방법
US20070081133A1 (en) * 2004-12-14 2007-04-12 Niikon Corporation Projection exposure apparatus and stage unit, and exposure method
JPWO2005057635A1 (ja) * 2003-12-15 2007-07-05 株式会社ニコン 投影露光装置及びステージ装置、並びに露光方法
US7394521B2 (en) 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7324274B2 (en) * 2003-12-24 2008-01-29 Nikon Corporation Microscope and immersion objective lens
CN1938646B (zh) * 2004-01-20 2010-12-15 卡尔蔡司Smt股份公司 曝光装置和用于投影透镜的测量装置
US7026259B2 (en) * 2004-01-21 2006-04-11 International Business Machines Corporation Liquid-filled balloons for immersion lithography
US7589822B2 (en) * 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
JP4506674B2 (ja) 2004-02-03 2010-07-21 株式会社ニコン 露光装置及びデバイス製造方法
US7050146B2 (en) * 2004-02-09 2006-05-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005081292A1 (ja) * 2004-02-20 2005-09-01 Nikon Corporation 露光装置、供給方法及び回収方法、露光方法、ならびにデバイス製造方法
US8488102B2 (en) * 2004-03-18 2013-07-16 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion fluid for immersion lithography, and method of performing immersion lithography
KR101250155B1 (ko) 2004-03-25 2013-04-05 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US7898642B2 (en) 2004-04-14 2011-03-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1747499A2 (en) * 2004-05-04 2007-01-31 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
US7616383B2 (en) 2004-05-18 2009-11-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN100594430C (zh) 2004-06-04 2010-03-17 卡尔蔡司Smt股份公司 用于测量光学成像系统的图像质量的系统
JP2005353762A (ja) * 2004-06-09 2005-12-22 Matsushita Electric Ind Co Ltd 半導体製造装置及びパターン形成方法
KR101421915B1 (ko) * 2004-06-09 2014-07-22 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US7463330B2 (en) 2004-07-07 2008-12-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1780772B1 (en) * 2004-07-12 2009-09-02 Nikon Corporation Exposure equipment and device manufacturing method
KR101230712B1 (ko) 2004-08-03 2013-02-07 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
US8305553B2 (en) * 2004-08-18 2012-11-06 Nikon Corporation Exposure apparatus and device manufacturing method
US7701550B2 (en) * 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060044533A1 (en) * 2004-08-27 2006-03-02 Asmlholding N.V. System and method for reducing disturbances caused by movement in an immersion lithography system
DE102004047677B4 (de) * 2004-09-30 2007-06-21 Advanced Micro Devices, Inc., Sunnyvale Verfahren und System für die Kontaminationserkennung und Überwachung in einer Lithographiebelichtungsanlage und Verfahren zum Betreiben der gleichen unter gesteuerten atomsphärischen Bedingungen
JP2006120674A (ja) * 2004-10-19 2006-05-11 Canon Inc 露光装置及び方法、デバイス製造方法
US7397533B2 (en) 2004-12-07 2008-07-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7880860B2 (en) 2004-12-20 2011-02-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
SG124351A1 (en) * 2005-01-14 2006-08-30 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
DE602006012746D1 (de) 2005-01-14 2010-04-22 Asml Netherlands Bv Lithografische Vorrichtung und Herstellungsverfahren
KR20180125636A (ko) 2005-01-31 2018-11-23 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US8692973B2 (en) * 2005-01-31 2014-04-08 Nikon Corporation Exposure apparatus and method for producing device
US7282701B2 (en) 2005-02-28 2007-10-16 Asml Netherlands B.V. Sensor for use in a lithographic apparatus
JP4605219B2 (ja) * 2005-03-30 2011-01-05 株式会社ニコン 露光条件の決定方法、露光方法及び露光装置、並びにデバイス製造方法
USRE43576E1 (en) 2005-04-08 2012-08-14 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
US20060232753A1 (en) * 2005-04-19 2006-10-19 Asml Holding N.V. Liquid immersion lithography system with tilted liquid flow
US20070004182A1 (en) * 2005-06-30 2007-01-04 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and system for inhibiting immersion lithography defect formation
US7357768B2 (en) * 2005-09-22 2008-04-15 William Marshall Recliner exerciser
US7773195B2 (en) * 2005-11-29 2010-08-10 Asml Holding N.V. System and method to increase surface tension and contact angle in immersion lithography
US8125610B2 (en) 2005-12-02 2012-02-28 ASML Metherlands B.V. Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus
US20070124987A1 (en) * 2005-12-05 2007-06-07 Brown Jeffrey K Electronic pest control apparatus
KR100768849B1 (ko) * 2005-12-06 2007-10-22 엘지전자 주식회사 계통 연계형 연료전지 시스템의 전원공급장치 및 방법
US7649611B2 (en) 2005-12-30 2010-01-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE102006021797A1 (de) 2006-05-09 2007-11-15 Carl Zeiss Smt Ag Optische Abbildungseinrichtung mit thermischer Dämpfung
US20070296937A1 (en) * 2006-06-26 2007-12-27 International Business Machines Corporation Illumination light in immersion lithography stepper for particle or bubble detection
US8654305B2 (en) * 2007-02-15 2014-02-18 Asml Holding N.V. Systems and methods for insitu lens cleaning in immersion lithography
US8817226B2 (en) 2007-02-15 2014-08-26 Asml Holding N.V. Systems and methods for insitu lens cleaning using ozone in immersion lithography
US20080198347A1 (en) * 2007-02-16 2008-08-21 Canon Kabushiki Kaisha Immersion exposure apparatus and method of manufacturing device
US8237911B2 (en) 2007-03-15 2012-08-07 Nikon Corporation Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine
TWI389551B (zh) * 2007-08-09 2013-03-11 晨星半導體股份有限公司 迦瑪校正裝置
NL1036009A1 (nl) * 2007-10-05 2009-04-07 Asml Netherlands Bv An Immersion Lithography Apparatus.
KR101448152B1 (ko) * 2008-03-26 2014-10-07 삼성전자주식회사 수직 포토게이트를 구비한 거리측정 센서 및 그를 구비한입체 컬러 이미지 센서
US9176393B2 (en) 2008-05-28 2015-11-03 Asml Netherlands B.V. Lithographic apparatus and a method of operating the apparatus
AU2010343143A1 (en) * 2009-12-28 2012-06-28 Pioneer Hi-Bred International, Inc. Sorghum fertility restorer genotypes and methods of marker-assisted selection
EP2381310B1 (en) 2010-04-22 2015-05-06 ASML Netherlands BV Fluid handling structure and lithographic apparatus
JP5457384B2 (ja) * 2010-05-21 2014-04-02 東京エレクトロン株式会社 液処理装置及び液処理方法
JP5797582B2 (ja) * 2012-02-24 2015-10-21 株式会社アドテックエンジニアリング 露光描画装置、プログラム及び露光描画方法
CN103885301B (zh) * 2014-03-21 2015-09-16 浙江大学 浸没式光刻机中浸液传送系统的控制时序的模型匹配方法

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4346164A (en) * 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
JPS57153433A (en) * 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
IL66127A (en) * 1982-06-24 1987-11-30 Israel State Method and apparatus for measuring the index of refraction of fluids
US4670637A (en) * 1985-02-11 1987-06-02 The United States Of America As Represented By The Secretary Of The Army Method and apparatus for transmitting a laser signal through fog
JPS62266447A (ja) * 1986-05-14 1987-11-19 Eisai Co Ltd 容器内の液体中の異物検出方法および装置
US5151752A (en) * 1988-06-16 1992-09-29 Asahi Kogaku Kogyo K.K. Method of measuring refractive indices of lens and sample liquid
JP2899360B2 (ja) * 1990-05-21 1999-06-02 興和株式会社 流体中の粒子計測方法及びその装置
JPH06124873A (ja) * 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
JP2753930B2 (ja) 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
US5422714A (en) 1993-06-07 1995-06-06 Corning Incorporated Device for comparing the refractive indices of an optical immersion liquid and a reference glass
GB9324926D0 (en) 1993-12-04 1994-01-26 Renishaw Plc Combined interferometer and refractometer
KR100542414B1 (ko) * 1996-03-27 2006-05-10 가부시키가이샤 니콘 노광장치및공조장치
JP2982720B2 (ja) * 1996-04-26 1999-11-29 日本電気株式会社 パーティクルモニター装置およびこれを具備した無塵化プロセス装置
US5825043A (en) * 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
US6133995A (en) * 1997-05-09 2000-10-17 Sysmex Corporation Particle measuring apparatus
US5900354A (en) 1997-07-03 1999-05-04 Batchelder; John Samuel Method for optical inspection and lithography
US6241827B1 (en) * 1998-02-17 2001-06-05 Tokyo Electron Limited Method for cleaning a workpiece
JP3833810B2 (ja) * 1998-03-04 2006-10-18 株式会社日立製作所 半導体の製造方法並びにプラズマ処理方法およびその装置
DE10025789A1 (de) 2000-05-19 2001-11-22 Schmidt & Haensch Gmbh & Co Op Refraktometer
WO2002091078A1 (en) 2001-05-07 2002-11-14 Massachusetts Institute Of Technology Methods and apparatus employing an index matching medium
JP4352874B2 (ja) * 2002-12-10 2009-10-28 株式会社ニコン 露光装置及びデバイス製造方法
JP2005277363A (ja) * 2003-05-23 2005-10-06 Nikon Corp 露光装置及びデバイス製造方法
EP1489461A1 (en) 2003-06-11 2004-12-22 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1486827B1 (en) * 2003-06-11 2011-11-02 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005006026A2 (en) 2003-07-01 2005-01-20 Nikon Corporation Using isotopically specified fluids as optical elements
US7006209B2 (en) * 2003-07-25 2006-02-28 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems

Similar Documents

Publication Publication Date Title
JP2007502539A5 (https=)
RU2632580C2 (ru) Устройство для обнаружения сигналов рассеянного света и способ их обнаружения
JP2007057360A (ja) 粒子検出装置及びそれに使用される粒子検出方法
JP2007502539A (ja) 浸漬リソグラフィシステムの監視・制御方法及び装置
JP2010520997A (ja) 粒子を検知する方法およびシステム
KR20160016797A (ko) 입자 검출 시스템 및 관련 방법
JP2006329982A (ja) 検査装置およびその方法
JP4567016B2 (ja) 欠陥検査装置及び欠陥検査方法
JP2020193914A5 (https=)
JP6755105B2 (ja) 炎検知器
JP2022526625A (ja) 確率的レチクル欠陥処理
US12111265B2 (en) Probing film that absorbs and reacts with gases, with light of different wavelengths for higher gas sensitivity
CN105784552B (zh) 颗粒物浓度检测方法
EP3414554B1 (en) Probing film that absorbs and reacts with gases, with light of different wavelengths, humidity detection, and optionally temperature detection
CN114127003B (zh) 用于生成电梯绳索表示的方法、控制单元和用于执行该方法的计算机程序产品
EP3828529B1 (en) Smoke detector for aspiration smoke detector system
CN110428574B (zh) 一种烟雾探测器及其烟雾探测方法
JP3691458B2 (ja) 風洞模型試験装置の衝突防止方法及び装置
KR20220103084A (ko) 유해성분 측정 장치 및 이를 이용한 유해성분 분석 시스템
CN109075095B (zh) 用于基板处理的颗粒检测
KR20090090277A (ko) 이물검사장치, 노광장치 및 디바이스 제조방법
JP2004117096A (ja) 粒径分布測定方法および装置
KR101805907B1 (ko) 디지털 영상 촬영을 이용한 공기중 먼지 측정방법
JP2008026050A (ja) 中子孔検査方法
JP2006023169A (ja) 耐候性試験装置