JP2007501524A - 全体的な設計目標を達成すべく、半導体デバイス中のキャリア移動度の可変な半導体デバイス - Google Patents

全体的な設計目標を達成すべく、半導体デバイス中のキャリア移動度の可変な半導体デバイス Download PDF

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JP2007501524A
JP2007501524A JP2006522626A JP2006522626A JP2007501524A JP 2007501524 A JP2007501524 A JP 2007501524A JP 2006522626 A JP2006522626 A JP 2006522626A JP 2006522626 A JP2006522626 A JP 2006522626A JP 2007501524 A JP2007501524 A JP 2007501524A
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Japan
Prior art keywords
fin
gate
insulating layer
finfet
carrier mobility
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JP2006522626A
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Japanese (ja)
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JP2007501524A5 (enExample
Inventor
ユ ビン
エス． アーメド シブリー
ワン ハイホン
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Advanced Micro Devices Inc
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Advanced Micro Devices Inc
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Publication of JP2007501524A publication Critical patent/JP2007501524A/ja
Publication of JP2007501524A5 publication Critical patent/JP2007501524A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H10D86/215—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI comprising FinFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6735—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes having gates fully surrounding the channels, e.g. gate-all-around
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0193—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices the components including FinFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/853—Complementary IGFETs, e.g. CMOS comprising FinFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/011—Manufacture or treatment comprising FinFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI

Landscapes

  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Chemical Or Physical Treatment Of Fibers (AREA)
JP2006522626A 2003-08-05 2004-07-28 全体的な設計目標を達成すべく、半導体デバイス中のキャリア移動度の可変な半導体デバイス Pending JP2007501524A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/633,504 US7095065B2 (en) 2003-08-05 2003-08-05 Varying carrier mobility in semiconductor devices to achieve overall design goals
PCT/US2004/024590 WO2005034207A2 (en) 2003-08-05 2004-07-28 Varying carrier mobility on finfet active surfaces to achieve overall design goals

Publications (2)

Publication Number Publication Date
JP2007501524A true JP2007501524A (ja) 2007-01-25
JP2007501524A5 JP2007501524A5 (enExample) 2007-08-02

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JP2006522626A Pending JP2007501524A (ja) 2003-08-05 2004-07-28 全体的な設計目標を達成すべく、半導体デバイス中のキャリア移動度の可変な半導体デバイス

Country Status (8)

Country Link
US (1) US7095065B2 (enExample)
JP (1) JP2007501524A (enExample)
KR (1) KR101042713B1 (enExample)
CN (1) CN1826696B (enExample)
DE (1) DE112004001442T5 (enExample)
GB (1) GB2419234B (enExample)
TW (1) TWI363421B (enExample)
WO (1) WO2005034207A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11670675B2 (en) 2020-12-04 2023-06-06 United Semiconductor Japan Co., Ltd. Semiconductor device

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US6855607B2 (en) * 2003-06-12 2005-02-15 Advanced Micro Devices, Inc. Multi-step chemical mechanical polishing of a gate area in a FinFET
US6946377B2 (en) * 2003-10-29 2005-09-20 Texas Instruments Incorporated Multiple-gate MOSFET device with lithography independent silicon body thickness and methods for fabricating the same
US7087471B2 (en) * 2004-03-15 2006-08-08 International Business Machines Corporation Locally thinned fins
FR2899017A1 (fr) * 2006-03-21 2007-09-28 St Microelectronics Sa Procede de realisation d'un transistor a canal comprenant du germanium
JP2009535800A (ja) * 2006-04-26 2009-10-01 エヌエックスピー ビー ヴィ 不揮発性メモリデバイス
US7517764B2 (en) * 2006-06-29 2009-04-14 International Business Machines Corporation Bulk FinFET device
US8883597B2 (en) * 2007-07-31 2014-11-11 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabrication of a FinFET element
FR2928029B1 (fr) * 2008-02-27 2011-04-08 St Microelectronics Crolles 2 Procede de fabrication d'un dispositif semi-conducteur a grille enterree et circuit integre correspondant.
FR2928028B1 (fr) * 2008-02-27 2011-07-15 St Microelectronics Crolles 2 Procede de fabrication d'un dispositif semi-conducteur a grille enterree et circuit integre correspondant.
JP5718585B2 (ja) * 2010-05-19 2015-05-13 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体装置及びその製造方法、並びにデータ処理システム
US20120146101A1 (en) * 2010-12-13 2012-06-14 Chun-Hsien Lin Multi-gate transistor devices and manufacturing method thereof
US9059001B2 (en) * 2011-12-16 2015-06-16 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with biased feature
CN113345952B (zh) 2011-12-22 2025-05-13 英特尔公司 具有颈状半导体主体的半导体器件以及形成不同宽度的半导体主体的方法
CN103474461B (zh) * 2012-06-06 2016-01-06 中芯国际集成电路制造(上海)有限公司 鳍式场效应管及其形成方法
US8841189B1 (en) * 2013-06-14 2014-09-23 International Business Machines Corporation Transistor having all-around source/drain metal contact channel stressor and method to fabricate same
US9425275B2 (en) 2014-06-13 2016-08-23 Samsung Electronics Co., Ltd. Integrated circuit chips having field effect transistors with different gate designs
US9112032B1 (en) * 2014-06-16 2015-08-18 Globalfoundries Inc. Methods of forming replacement gate structures on semiconductor devices
US9590074B1 (en) * 2015-12-05 2017-03-07 International Business Machines Corporation Method to prevent lateral epitaxial growth in semiconductor devices
US10879125B2 (en) 2018-12-27 2020-12-29 Nanya Technology Corporation FinFET structure and method of manufacturing the same
CN115669260A (zh) * 2021-05-12 2023-01-31 长江存储科技有限责任公司 具有三维晶体管的存储器外围电路及其形成方法
CN113764348B (zh) * 2021-09-07 2023-06-16 上海集成电路装备材料产业创新中心有限公司 鳍式半导体器件的制备方法

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JPS61112364A (ja) * 1984-11-07 1986-05-30 Hitachi Ltd 半導体装置
JPH03250770A (ja) * 1990-02-28 1991-11-08 Sony Corp 半導体装置
JPH06342911A (ja) * 1993-06-01 1994-12-13 Oki Electric Ind Co Ltd 半導体装置の製造方法
JP2001093987A (ja) * 1999-07-29 2001-04-06 Stmicroelectronics Inc Ｓｉ基板上のＧａＡｓ／Ｇｅの新規なＣＭＯＳ回路
JP2002118255A (ja) * 2000-07-31 2002-04-19 Toshiba Corp 半導体装置およびその製造方法
JP2002151688A (ja) * 2000-08-28 2002-05-24 Mitsubishi Electric Corp Ｍｏｓ型半導体装置およびその製造方法
US20020197803A1 (en) * 2001-06-21 2002-12-26 Amberwave Systems Corporation Enhancement of p-type metal-oxide-semiconductor field effect transistors
JP2003163356A (ja) * 2001-10-05 2003-06-06 Internatl Business Mach Corp <Ibm> 二重ゲート・トランジスタおよびその製造方法
JP2003188273A (ja) * 2001-12-13 2003-07-04 Tadahiro Omi 相補型ｍｉｓ装置
US20040110331A1 (en) * 2002-12-06 2004-06-10 Yee-Chia Yeo CMOS inverters configured using multiple-gate transistors

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JPS61112364A (ja) * 1984-11-07 1986-05-30 Hitachi Ltd 半導体装置
JPH03250770A (ja) * 1990-02-28 1991-11-08 Sony Corp 半導体装置
JPH06342911A (ja) * 1993-06-01 1994-12-13 Oki Electric Ind Co Ltd 半導体装置の製造方法
JP2001093987A (ja) * 1999-07-29 2001-04-06 Stmicroelectronics Inc Ｓｉ基板上のＧａＡｓ／Ｇｅの新規なＣＭＯＳ回路
JP2002118255A (ja) * 2000-07-31 2002-04-19 Toshiba Corp 半導体装置およびその製造方法
JP2002151688A (ja) * 2000-08-28 2002-05-24 Mitsubishi Electric Corp Ｍｏｓ型半導体装置およびその製造方法
US20020197803A1 (en) * 2001-06-21 2002-12-26 Amberwave Systems Corporation Enhancement of p-type metal-oxide-semiconductor field effect transistors
JP2003163356A (ja) * 2001-10-05 2003-06-06 Internatl Business Mach Corp <Ibm> 二重ゲート・トランジスタおよびその製造方法
JP2003188273A (ja) * 2001-12-13 2003-07-04 Tadahiro Omi 相補型ｍｉｓ装置
US20040110331A1 (en) * 2002-12-06 2004-06-10 Yee-Chia Yeo CMOS inverters configured using multiple-gate transistors

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11670675B2 (en) 2020-12-04 2023-06-06 United Semiconductor Japan Co., Ltd. Semiconductor device

Also Published As

Publication number Publication date
US20050029603A1 (en) 2005-02-10
WO2005034207A2 (en) 2005-04-14
KR101042713B1 (ko) 2011-06-20
CN1826696B (zh) 2011-01-26
DE112004001442T5 (de) 2006-06-08
US7095065B2 (en) 2006-08-22
WO2005034207A3 (en) 2005-06-30
GB0526405D0 (en) 2006-02-08
TW200509390A (en) 2005-03-01
KR20060054420A (ko) 2006-05-22
TWI363421B (en) 2012-05-01
GB2419234B (en) 2007-02-21
GB2419234A (en) 2006-04-19
CN1826696A (zh) 2006-08-30

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